CN112490231B - SiC carrier life regulation and control-based patch type all-solid-state high-power microwave source - Google Patents

SiC carrier life regulation and control-based patch type all-solid-state high-power microwave source Download PDF

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CN112490231B
CN112490231B CN202011394810.1A CN202011394810A CN112490231B CN 112490231 B CN112490231 B CN 112490231B CN 202011394810 A CN202011394810 A CN 202011394810A CN 112490231 B CN112490231 B CN 112490231B
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electrode
metal sheet
microwave source
solid
sic
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CN112490231A (en
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栾崇彪
谢卫平
李洪涛
袁建强
马勋
肖金水
刘宏伟
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Institute of Fluid Physics of CAEP
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/12—Supports; Mounting means
    • H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/2283—Supports; Mounting means by structural association with other equipment or articles mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package

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  • Microelectronics & Electronic Packaging (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

The invention relates to the technical field of semiconductor devices, and discloses a surface-mounted all-solid-state high-power microwave source based on SiC carrier life regulation, which comprises a semiconductor wafer, wherein a photoconductive switch and a planar radiation antenna are integrated on the wafer, the SiC photoconductive switch and the planar radiation antenna are integrated on the same SiC wafer, and the radiation antenna is manufactured on the basis of a semi-insulating SiC material by adopting processes such as ion injection and the like.

Description

Surface-mounted type all-solid-state high-power microwave source based on SiC carrier life regulation
Technical Field
The invention relates to the technical field of semiconductor devices, in particular to a surface-mounted all-solid-state high-power microwave source based on SiC carrier life regulation.
Background
The high-power microwave has the characteristics of high light speed attack, large beam coverage area, instant effect, large magazine, all weather, strong concealment and the like, and is novel subversive equipment for changing the form of future wars. With the continuous progress of the related technology, higher requirements on a high-power microwave source, such as solid stating, compactness, light weight, high repetition frequency, long service life and good environmental suitability, are provided.
Compared with the traditional high-power microwave generation technology based on relativistic vacuum electronics, solid-state devices such as GaAs, gaN and SiC can realize broadband coverage in frequency, have pulse output capacity of several ns to ms magnitude in pulse width, can reach hundreds of kHz to MHz magnitude in repetition frequency, and have digital phase control and beam scanning capacity in phase; meanwhile, by utilizing the advantage that the signals of the previous-stage excitation source can be flexibly set, pulses or frequencies can be more flexibly combined or scanned according to target characteristics, so that the application effect and the range of the system are effectively improved; in addition, each component of the power synthesis array surface is relatively independent, and the main technical indexes of the whole synthesis array surface are not greatly influenced by functional faults of a few components, so that the power synthesis array surface has a certain fault weakening function. Therefore, the technical approach of generating high power microwaves based on solid state devices and using power synthesis has obvious advantages. However, because the output power of solid-state microwave devices such as GaAs, gaN, etc. is limited, a multi-stage cascade amplification form is usually adopted to generate output power of tens of kW, and this design will result in a complex, bulky and costly whole system structure. Therefore, the output power of a single solid-state microwave power device needs to be further improved, and the complexity and the volume weight of a system are reduced.
Compared with a solid-state high-power microwave source based on microwave devices such as GaAs and GaN, the high-power microwave source based on SiC carrier life regulation is a brand new technical way for realizing high-power microwave output.
Therefore, a microwave source with high output power, simple structure, small size and low cost is needed in the technical field of semiconductor devices.
Disclosure of Invention
The microwave source overcomes the defects of the prior art, and has the advantages of high output power, simple structure, small volume and lower cost.
The invention is realized by the following technical scheme:
a surface mount type all-solid-state high-power microwave source based on SiC carrier life regulation comprises a semiconductor wafer, wherein a photoconductive switch and a planar radiation antenna are integrated on the wafer, and the wafer is made of SiC.
Further, the service life of the SiC current carrier in the wafer is regulated and controlled through a material growth process or irradiation and annealing.
Further, the photoconductive switch comprises a first electrode and a second electrode, and the first electrode and the second electrode are respectively located on two side faces of the wafer and are opposite in position.
Further, the first electrode is disc-shaped or circular, and the second electrode is circular with a middle part through which laser pulses can pass.
Further, the first electrode and/or the second electrode are grown with high doped n before being manufactured + -a GaN layer.
Furthermore, the planar radiation antenna comprises a first metal sheet and a second metal sheet, the first metal sheet is located on the side where the first electrode is located, and the second metal sheet is located on the side where the second electrode is located.
Furthermore, the first metal sheet is electrically connected with the first electrode through a connecting lead, and the second metal sheet is electrically connected with the second electrode through a ceramic capacitor.
Furthermore, the first metal sheet and the second metal sheet are both in an arc shape, and the extending directions of the arc of the first metal sheet and the arc of the second metal sheet are opposite.
Further, the widths of the first metal sheet and the second metal sheet increase with increasing distance from the photoconductive switch.
Compared with the prior art, the invention has the following advantages and beneficial effects:
the high-power microwave source unit comprises a semiconductor wafer, wherein a photoconductive switch and a planar radiation antenna are integrated on the wafer, the SiC photoconductive switch and the planar radiation antenna are integrated on the same SiC wafer, the radiation antenna is manufactured by adopting processes such as ion injection and the like based on a semi-insulating SiC material, the high-power microwave source unit can be in a patch type structure, the power synthesis of a plurality of high-power microwave source units can be realized by triggering picosecond synchronization of laser, the microwave power output by the high-power microwave source unit in a single patch type structure can reach MW magnitude based on the advantage of high power capacity of the SiC semiconductor material, and the high-power microwave source unit has great popularization value and wide application prospect.
Drawings
The accompanying drawings, which are included to provide a further understanding of the embodiments of the invention and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the invention and together with the description serve to explain the principles of the invention. In the drawings:
FIG. 1 is a top half-sectional view of the overall structure of the present invention;
FIG. 2 is a front view of the body construction of the present invention;
fig. 3 is a rear view of the main structure of the present invention.
Reference numbers and corresponding part names in the drawings:
1-wafer, 2-first electrode, 3-second electrode, 4-connecting wire, 5-first metal sheet, 6-ceramic capacitor, and 7-second metal sheet.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to examples and the accompanying drawings, and the exemplary embodiments and descriptions thereof are only used for explaining the present invention and are not used as limiting the present invention.
A surface mount type all-solid-state high-power microwave source based on SiC carrier life regulation comprises a semiconductor wafer 1, wherein a photoconductive switch and a planar radiation antenna are integrated on the wafer 1, and the wafer 1 is made of SiC. It can be understood that, the planar radiation antenna design based on the SiC material can improve the bandwidth, gain and radiation efficiency of the planar antenna, and the photoconductive switch and the planar radiation antenna are integrated on the same SiC wafer, so that a high-power microwave source unit is a patch type structure.
Further, the service life of the SiC current carrier in the wafer 1 is regulated and controlled through a material growth process or irradiation and annealing. It can be understood that the service life of the current carrier is adjusted by means of impurity doping, neutron irradiation, high-temperature annealing and the like in the growth process of the wafer 1 material, the length of the current carrier can be adjusted by doping, the service life of the current carrier can be shortened by neutron irradiation, and the service life is prolonged by high-temperature annealing.
Further, the photoconductive switch comprises a first electrode 2 and a second electrode 3, and the first electrode 2 and the second electrode 3 are respectively located on two sides of the wafer 1 and are opposite to each other. Further, the first electrode 2 is disc-shaped or circular, and the second electrode 3 is circular with a middle portion through which laser pulses can pass. It can be understood that the positions of the first electrode 2 and the second electrode 3 are opposite to form a photoconductive switch, the middle part of the second electrode 3 is provided with a hole to form a ring shape, so that laser pulses enter the wafer 1, and the advantages of high peak power, narrow pulses, low trigger jitter and high repetition frequency electric pulses generated by the photoconductive switch are utilized, so that the microwave source module with small volume, light weight and high power is obtained.
Further, the first electrode 2 and/or the second electrode 3 are grown with high doping n before being manufactured + -a GaN layer. It will be appreciated that by doping n during the growth of the first and second electrodes 2, 3 + The GaN layer enables the adjustment of the carrier lifetime.
Further, the planar radiation antenna comprises a first metal sheet 5 and a second metal sheet 7, wherein the first metal sheet 5 is located on the side where the first electrode 2 is located, and the second metal sheet 7 is located on the side where the second electrode 3 is located. Furthermore, the first metal sheet 5 is electrically connected to the first electrode 2 through the connecting wire 4, and the second metal sheet 7 is electrically connected to the second electrode 3 through the ceramic capacitor 6. It can be understood that the first metal sheet 5 and the second metal sheet 7 are respectively disposed on two sides of the wafer 1, and are respectively connected with the first electrode 1 and the second electrode 2 through the connecting wires 4 and the ceramic capacitors 6 to form electrical connections, so as to generate the high-power microwave source.
Further, the first metal sheet 5 and the second metal sheet 7 are both in an arc shape, and the extending directions of the arc of the first metal sheet 5 and the arc of the second metal sheet 7 are opposite. Further, the widths of the first metal sheet 5 and the second metal sheet 7 increase with increasing distance from the photoconductive switch. It can be understood that the first metal sheet 5 and the second metal sheet 7 are curved to deflect the carriers in a predetermined direction, so as to obtain a more stable and high-power microwave.
It should be noted that, in this document, relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
It will be understood that the terms "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like are used in an orientation or positional relationship indicated in the drawings for convenience in describing the invention, and do not indicate or imply that the components or mechanisms so referred to must be in a particular orientation, constructed and operated in a particular orientation, and thus are not to be considered as limiting the invention.
The above-mentioned embodiments, objects, technical solutions and advantages of the present invention are further described in detail, it should be understood that the above-mentioned embodiments are only preferred embodiments of the present invention, and are not intended to limit the scope of the present invention, and any modifications, equivalent substitutions, improvements and the like made within the spirit and principle of the present invention should be included in the scope of the present invention.

Claims (4)

1. A surface mount type all-solid-state high-power microwave source based on SiC carrier life regulation is characterized by comprising a semiconductor wafer (1), wherein a photoconductive switch and a planar radiation antenna are integrated on the wafer (1), and the wafer (1) is made of SiC;
the photoconductive switch comprises a first electrode (2) and a second electrode (3), wherein the first electrode (2) and the second electrode (3) are respectively positioned on two side surfaces of the wafer (1) and are opposite in position;
the first electrode (2) is disc-shaped or circular, and the second electrode (3) is circular with the middle part allowing laser pulses to pass through;
the planar radiation antenna comprises a first metal sheet (5) and a second metal sheet (7), wherein the first metal sheet (5) is located on the side where the first electrode (2) is located, and the second metal sheet (7) is located on the side where the second electrode (3) is located;
the first metal sheet (5) is electrically connected with the first electrode (2) through a connecting lead (4), and the second metal sheet (7) is electrically connected with the second electrode (3) through a ceramic capacitor (6).
2. The SiC carrier lifetime modulation-based patch type all-solid-state high-power microwave source according to claim 1, wherein a highly doped n + -GaN layer is grown before the first electrode (2) and/or the second electrode (3) are/is manufactured.
3. The SiC carrier lifetime regulation-based patch type all-solid-state high-power microwave source as claimed in claim 1, wherein the first metal sheet (5) and the second metal sheet (7) are both in a curved arc shape, and the curved arc extending directions of the first metal sheet (5) and the second metal sheet (7) are opposite.
4. The SiC carrier lifetime modulation-based patch type all-solid-state high-power microwave source according to claim 3, wherein the widths of the first metal sheet (5) and the second metal sheet (7) increase with the distance from the photoconductive switch.
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5227621A (en) * 1992-09-18 1993-07-13 The United States Of America As Represented By The Secretary Of The Army Ultra-wideband high power photon triggered frequency independent radiator
JP2008098576A (en) * 2006-10-16 2008-04-24 Yokogawa Electric Corp Photoconductive switch
CN103681969A (en) * 2013-12-12 2014-03-26 上海师范大学 Photoconductive switch manufacturing method based on SiC substrate
CN111371409A (en) * 2020-04-20 2020-07-03 中国人民解放军国防科技大学 Light-operated frequency-adjustable all-solid-state multi-period microwave generator

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5227621A (en) * 1992-09-18 1993-07-13 The United States Of America As Represented By The Secretary Of The Army Ultra-wideband high power photon triggered frequency independent radiator
JP2008098576A (en) * 2006-10-16 2008-04-24 Yokogawa Electric Corp Photoconductive switch
CN103681969A (en) * 2013-12-12 2014-03-26 上海师范大学 Photoconductive switch manufacturing method based on SiC substrate
CN111371409A (en) * 2020-04-20 2020-07-03 中国人民解放军国防科技大学 Light-operated frequency-adjustable all-solid-state multi-period microwave generator

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
A New Phenomenon in Semi-Insulating 4H-SiC Photoconductive Semiconductor Switches;Chongbiao Luan等;《IEEE TRANSACTIONS ON ELECTRON DEVICES》;20180131;第65卷(第1期);172-175 *
钒补偿6H-SiC光导开关的模拟仿真;李星月;《中国优秀硕士论文全文数据库》;20180815(第08期);I135-70 *

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