CN112485626B - Quality grade classification method for power devices - Google Patents
Quality grade classification method for power devices Download PDFInfo
- Publication number
- CN112485626B CN112485626B CN201910858470.4A CN201910858470A CN112485626B CN 112485626 B CN112485626 B CN 112485626B CN 201910858470 A CN201910858470 A CN 201910858470A CN 112485626 B CN112485626 B CN 112485626B
- Authority
- CN
- China
- Prior art keywords
- test
- electrical parameter
- variation
- power device
- quality
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2608—Circuits therefor for testing bipolar transistors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2608—Circuits therefor for testing bipolar transistors
- G01R31/2619—Circuits therefor for testing bipolar transistors for measuring thermal properties thereof
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
- G01R31/2628—Circuits therefor for testing field effect transistors, i.e. FET's for measuring thermal properties thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
The invention provides a quality grade classification method of a power device, which comprises the steps of providing the power device; carrying out thermal response test and electrical parameter test on the power device, and calculating to obtain variation; determining a standard value range and an allowable variation range, and judging whether a thermal response test result and an electrical parameter test result meet the standard value range; judging whether the variation exceeds an allowable variation range; establishing a quality grade classification standard, wherein the quality grade classification standard comprises quality grades, the quality grades comprise test indexes of a thermal response test, test indexes of an electrical parameter test and judgment indexes of corresponding variation, each test index and each judgment index correspond to a reference range, and each reference range corresponds to a score; giving a corresponding score value based on the thermal response test result, the electrical parameter test result and the reference range to which the variable quantity belongs; adding the thermal response test result, the electrical parameter test result and the value corresponding to the variable quantity to obtain a total value; rank classification is performed based on the scores and the total score.
Description
Technical Field
The invention relates to the technical field of power device screening, in particular to a quality grade classification method for power devices.
Background
The method comprises the following steps that early failure or poor quality products in batches need to be removed before formal application of the power device, and the specific removal method comprises the steps of testing various electrical parameters of the power device, comparing the test results of the various electrical parameters with various electrical parameter test standards, and judging the power device to be qualified if the test results of the various electrical parameters meet the test standards; and if one of the electrical parameter test results does not meet the test standard, judging the power device as a disqualified power device, and removing the power device from the batch.
However, the range of current electrical parameter test standardsRelatively wide, e.g. I of VDMOS (vertical double-diffused metal oxide semiconductor field effect transistor)GSS(Gate-source leakage current) parameter test standard is 0-100nA, and IGSS5nA and IGSSSince there is a significant difference between the quality class and the service life of a power device of 50nA, a method for classifying the quality class of the power device is urgently needed to be provided so as to finely divide the power device.
Disclosure of Invention
In view of the above problems, an object of the present invention is to provide a power device quality class classification method capable of finely classifying power devices.
In order to achieve the purpose, the invention adopts the following technical scheme: a quality grade classification method for power devices comprises the following steps:
providing a batch of power devices;
under the test condition, carrying out thermal response test and electrical parameter test on the power device; calculating to obtain a variation based on the electrical parameter test result;
determining a standard value range and an allowable variation range, and judging whether a thermal response test result and an electrical parameter test result meet the standard value range; judging whether the variation exceeds an allowable variation range; judging the power device which meets the standard value range and does not exceed the allowable variation range as a qualified power device;
establishing a quality grade classification standard, wherein the quality grade classification standard comprises at least two quality grades, each quality grade comprises a test index for representing a thermal response test, a test index for representing an electrical parameter test and a judgment index corresponding to a variable quantity, each test index and each judgment index correspond to a reference range, and each reference range corresponds to a score;
giving a corresponding score value based on the thermal response test result, the electrical parameter test result and the reference range to which the variable quantity belongs of the qualified power device;
adding the thermal response test result, the electrical parameter test result and the value corresponding to the variable quantity of each qualified power device to obtain a total value;
and classifying the qualified power devices according to the scores and the total scores.
Preferably, the thermal response test is a thermal response test after temperature stress; the electrical parameter test comprises a static electrical parameter test after a mechanical stress test, a static electrical parameter test after a high-temperature offset gate test, a static electrical parameter test after a high-temperature reverse offset test and a terminal electrical parameter test after the three tests are sequentially carried out.
Preferably, the variation comprises a first variation and a second variation, and the first variation is calculated based on static electrical parameter test results before and after the high-temperature offset gate test; and calculating to obtain a second variable quantity based on the static electrical parameter test results before and after the high-temperature reverse bias test.
Preferably, the test indexes of the electrical parameter test comprise drain-source breakdown voltage, static drain-source on-resistance, gate threshold voltage, zero gate voltage leakage current, gate-source leakage current and diode forward voltage drop; the electrical parameter tests include static electrical parameter tests and end point electrical parameter tests.
Preferably, the first variation and the second variation each include variations in drain-source breakdown voltage, static drain-source on-resistance, and gate threshold voltage; the variation of zero gate voltage leakage current; variation of gate-source leakage current.
Preferably, the quality grades are three, namely a first quality grade, a second quality grade and a third quality grade from high to low.
Preferably, when the thermal response test result, the static electrical parameter test result, the end point electrical parameter test result, and the scores corresponding to the first variation and the second variation of the qualified power device are all equal to the score corresponding to the first quality level, the qualified power device belongs to the first quality level; when the total score is larger than a set threshold, the qualified power device belongs to a third quality grade; the other qualified power devices are of a second quality class.
The quality grade classification method of the power device provided by the invention is based on whether the thermal response test result and the electrical parameter test result of the power device meet the standard value range or not and whether the variation exceeds the allowable variation range or not, and the power device with failure or poor quality is removed.
Furthermore, based on the thermal response test result, the electrical parameter test result and the variation of the power device, each test result of each power device is scored according to the reference range in the quality grade classification standard, and each measurement result of each power device is added to obtain a total score. Based on each test result of each power device, if each test result of a certain power device corresponds to a quality grade, where the quality grade is a high quality grade, the power device belongs to the high quality grade. And when the test result of one of the power devices does not belong to the high quality grade, each test result of the power device needs to be further added to obtain a total score, and when the total score is higher than a set threshold, the power device is judged to belong to another quality grade, wherein the quality grade is the low quality grade.
According to the quality class classification method of the power device, qualified power devices can be further classified in a refined mode, and specifically, the qualified power devices can be classified into a high-quality class and a low-quality class, or the high-quality class, the low-quality class and a quality class between the high-quality class and the low-quality class, and according to the quality class of the power device, the power device is subjected to priority positive application, and the positive application is considered or the positive application is abandoned.
Drawings
Fig. 1 is a flowchart of a power device quality class classification method according to a first embodiment of the present invention.
Detailed Description
The following describes an embodiment according to the present invention with reference to the drawings.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, however, the present invention may be practiced in other ways than those specifically described herein, and thus the present invention is not limited to the specific embodiments disclosed below.
As shown in fig. 1, a specific embodiment of the method for classifying quality levels of a power device according to the present invention is provided, which includes the following steps:
s100, providing a batch of power devices;
it needs to be further explained that: the power device may be any one of VDMOS (vertical double diffused metal oxide semiconductor field effect Transistor), IGBT (Insulated Gate Bipolar Transistor), and others.
S101, carrying out thermal response test and electrical parameter test on a power device under a test condition; calculating to obtain a variation based on the electrical parameter test result;
it should be further noted that, under the action of a specific pulse current or under the external temperature change, a temperature rise and a temperature drop phenomenon may occur in the power device, and the temperature rise and the temperature drop may generate a temperature stress (thermal stress) inside the power device.
The method comprises the following steps: the specific test conditions for the thermal response test of the VDMOS using the pulse current may be:
tH＝10ms，IM＝10mA，tMD50 mus, where, tHFor heating the pulse current width, IMFor measuring the magnitude of the pulse current, tMDTo test the pulse current width.
The electric parameter test aiming at the power device comprises a static electric parameter test and an end point electric parameter test, wherein the static electric parameter test comprises a static electric parameter test after a mechanical stress test, a static electric parameter test after a high-temperature offset gate test and a static electric parameter test after a high-temperature reverse offset test, and the end point electric parameter test refers to the electric parameter test after the mechanical stress test, the high-temperature offset gate test and the high-temperature reverse offset test are sequentially carried out.
The electrical parameter test has test indexes, which are respectively source-drain Breakdown Voltage (BV)DSS) Static drain source on-resistance (R)DS(ON)) Diode forward voltage drop (V)SD) Gate threshold voltage (V)GS(TH)) Zero gate voltage leakage current (I)DSS) And gate-source leakage current (I)GSS)。
Electrical parameter testing also needs to be performed under specific test conditions, for example: the specific test conditions for the electrical parameter test of the VDMOS, i.e. the test conditions corresponding to each test index, may be (as shown in table 1):
TABLE 1 Electrical parameter testing relates to test conditions corresponding to test indexes
Wherein, VGSIs a gate-source voltage, VDSIs a drain-source voltage, IDIs the drain current.
Also taking a VDMOS as an example, a specific method for calculating the variation based on the electrical parameter test result is introduced:
under the same test condition of electrical parameter test, static electrical parameters before and after a high-temperature offset gate test and static electrical parameters before and after a high-temperature reverse offset test are obtained through the existing test method, then, the variation before and after the test is calculated, namely, the first variation is calculated based on the test results of the static electrical parameters before and after the high-temperature offset gate test, and the second variation is calculated based on the test results of the static electrical parameters before and after the high-temperature reverse offset gate test.
S102, determining a standard value range and an allowable variation range, and judging whether a thermal response test result and an electrical parameter test result meet the standard value range; judging whether the variation exceeds the allowable variation range; judging the power device which meets the standard value range and does not exceed the allowable variation range as a qualified power device;
it should be noted that: the standard value range refers to the value range which is required to be met by each test index in the thermal response test and the electrical parameter test, and the standard value ranges of different types of power devices or the same type of power devices but different types of power devices are different.
The allowable variation range refers to a variation range in which the first variation amount and the second variation amount are allowed, and likewise, allowable variation ranges of different types of power devices or power devices of the same type but different models are different.
When the thermal response test result of a certain power device and the test result corresponding to the test index involved in the electrical parameter test are not in the standard value range, or the first variation and the second variation exceed the allowable variation range, the power component is marked as a failed power device and is rejected. Conversely, when the thermal response test result of a certain power device and the test result corresponding to the test index involved in the electrical parameter test are in the standard value range and the first variation and the second variation do not exceed the allowable variation range, the power device is marked as a qualified power device, that is, the qualified power device in the batch is screened out through preliminary screening to be used as the object of subsequent quality classification.
S103, establishing a quality grade classification standard, wherein the quality grade classification standard comprises at least two quality grades, each quality grade comprises a test index for representing a thermal response test, a test index for representing an electrical parameter test and a judgment index corresponding to variation, each test index and each judgment index correspond to a reference range, and each reference range corresponds to a score;
as a preferred embodiment in this step, the quality grades are three, and from high to low, the quality grades are respectively a first quality grade, a second quality grade and a third quality grade.
The test indexes and the judgment indexes related to the first quality grade, the second quality grade and the third quality grade correspond to a reference range, and the reference ranges corresponding to different types of power devices or power intervals of the same type but different types are different.
Using VDMOS as an example, the quality classification criteria are described in detail (see table 2 for details):
TABLE 2 VDMOS quality class Classification Standard
In table 2, μ is an average value of a certain test index corresponding to a batch of power devices; sigma is a standard deviation value of a certain test index corresponding to a batch of power devices; LB is an upper limit value in a test standard corresponding to a certain test index; UB is a lower limit value in a test standard corresponding to a certain test index; min is the minimum value in a certain test index corresponding to a batch of power devices; max is the maximum value of a certain test index corresponding to a batch of power devices.
The method comprises the following steps: the score is 1 when the test index and the determination index are in the reference range referred to by the first quality level, 5 when the test index and the determination index are in the reference range referred to by the second quality level, and 500 when the test index and the determination index are in the reference range referred to by the third quality level.
Of course, it is understood that other scores may be set according to different types of power devices or different models of power devices of the same type.
S104, giving corresponding scores to the thermal response test results, the electrical parameter test results and the reference ranges to which the variable quantities belong based on the qualified power devices;
each qualified power device corresponds to a thermal response test result, a static electrical parameter test result after a mechanical stress test, a static electrical parameter test result after a high-temperature offset gate test, a static electrical parameter test result after a high-temperature reverse offset test, and an end point electrical parameter test result after the mechanical stress test, the high-temperature offset gate test and the high-temperature reverse offset test are sequentially performed, namely the test result of each power device comprises at least one thermal response test result and four times of electrical parameter test results, and each test result is scored according to the quality grade classification standard established in the step S103.
Similarly, each qualified power device corresponds to the first variation and the second variation, and the first variation and the second variation are classified according to the quality class classification established in step S103.
S105, adding the thermal response test result, the electrical parameter test result and the value corresponding to the variable quantity of each qualified power device to obtain a total value;
in step S104, each qualified power device corresponds to at least one thermal response test result, four electrical parameter test results, and two variation amounts, and each thermal response test result corresponds to one score, each electrical parameter test result corresponds to one score, and each variation amount corresponds to one score.
And S106, classifying the qualified power devices based on the scores and the total scores.
And carrying out grade classification according to the score corresponding to each test of each power device and the corresponding total score.
The method comprises the following steps: when the score of each test result of the power device belongs to the first quality grade, the power device belongs to the first quality grade; when the total score of the power device is greater than a certain threshold value, such as 500, the power device belongs to a third quality level; and when the power device does not belong to the first quality class or the third quality class, the power device belongs to the second quality class.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (7)
1. A quality grade classification method for a power device is characterized by comprising the following steps:
providing a batch of power devices;
under the test condition, carrying out thermal response test and electrical parameter test on the power device; calculating to obtain a variation based on the electrical parameter test result;
determining a standard value range and an allowable variation range, and judging whether a thermal response test result and an electrical parameter test result meet the standard value range; judging whether the variation exceeds the allowable variation range; judging the power device which meets the standard value range and does not exceed the allowable variation range as a qualified power device;
establishing a quality grade classification standard, wherein the quality grade classification standard comprises at least two quality grades, each quality grade comprises a test index for representing the thermal response test, a test index for representing the electrical parameter test and a judgment index corresponding to the variation, each test index and each judgment index correspond to a reference range, and each reference range corresponds to a score;
assigning the score corresponding to the thermal response test result, the electrical parameter test result and the reference range to which the variation belongs based on the qualified power device;
adding the thermal response test result, the electrical parameter test result and the score corresponding to the variable quantity of each qualified power device to obtain a total score;
and classifying the qualified power devices according to the scores and the total scores.
2. The power device quality class classification method of claim 1,
the thermal response test is a thermal response test after temperature stress;
the electrical parameter test comprises a static electrical parameter test after a mechanical stress test, a static electrical parameter test after a high-temperature offset gate test, a static electrical parameter test after a high-temperature reverse offset test and a terminal electrical parameter test after the three tests are sequentially carried out.
3. The power device quality class classification method of claim 2, wherein: the variation comprises a first variation and a second variation, and the first variation is obtained by calculation based on static electrical parameter test results before and after a high-temperature offset gate test; and calculating to obtain the second variable quantity based on the static electrical parameter test results before and after the high-temperature reverse bias test.
4. The power device quality class classification method of claim 3,
the test indexes of the electrical parameter test comprise drain-source breakdown voltage, static drain-source on-resistance, gate threshold voltage, zero gate voltage leakage current, gate-source leakage current and diode forward voltage drop; the electrical parameter test comprises the static electrical parameter test and the end point electrical parameter test.
5. The method of claim 4, wherein the first variation and the second variation each comprise variations in the drain-source breakdown voltage, the static drain-source on-resistance, and the gate threshold voltage;
the variation of the zero gate voltage leakage current;
and the variation of the gate-source leakage current.
6. The power device quality class classification method of claim 1,
the quality grades are three and respectively a first quality grade, a second quality grade and a third quality grade from high to low.
7. The power device quality class classification method of claim 6,
when the thermal response test result, the static electrical parameter test result, the end point electrical parameter test result, and the scores corresponding to the first variation and the second variation of the qualified power device are all equal to the score corresponding to the first quality level, the qualified power device belongs to the first quality level;
when the total score is larger than a set threshold value, the qualified power device belongs to the third quality level; the other of said qualified power devices are of a second quality class.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910858470.4A CN112485626B (en) | 2019-09-11 | 2019-09-11 | Quality grade classification method for power devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910858470.4A CN112485626B (en) | 2019-09-11 | 2019-09-11 | Quality grade classification method for power devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112485626A CN112485626A (en) | 2021-03-12 |
| CN112485626B true CN112485626B (en) | 2022-05-17 |
Family
ID=74920115
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910858470.4A Active CN112485626B (en) | 2019-09-11 | 2019-09-11 | Quality grade classification method for power devices |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112485626B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113030711B (en) * | 2021-05-26 | 2021-09-10 | 成都市克莱微波科技有限公司 | Power amplifier chip, chip testing system and method |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102095572A (en) * | 2010-12-06 | 2011-06-15 | 广州市熠芯节能服务有限公司 | Product performance test method based on benchmarking product comparison |
| CN102938258A (en) * | 2012-11-30 | 2013-02-20 | 上海宏力半导体制造有限公司 | Semiconductor testing method |
| CN107515368A (en) * | 2017-08-17 | 2017-12-26 | 上海华岭集成电路技术股份有限公司 | A kind of method that test program limiting value is dynamically changed in microcircuit test |
| CN107833840A (en) * | 2017-10-27 | 2018-03-23 | 西安电子科技大学 | The method for testing junction temperature of AlGaN/GaN HEMTs |
| CN108037438A (en) * | 2017-12-13 | 2018-05-15 | 中国科学院新疆理化技术研究所 | The test method that a kind of total dose irradiation influences PMOSFET Negative Bias Temperature Instabilities |
| CN108334707A (en) * | 2018-02-09 | 2018-07-27 | 哈尔滨工业大学 | A kind of analysis method of single particle radiation silicon carbide power MOSFETs security boundary performance degradations |
| CN108333209A (en) * | 2018-02-28 | 2018-07-27 | 中国电子科技集团公司第十三研究所 | A kind of GaN HEMT acceleration service life test methods |
| CN109765471A (en) * | 2018-12-28 | 2019-05-17 | 上海交通大学 | Power semiconductor statistics of features test method |
-
2019
- 2019-09-11 CN CN201910858470.4A patent/CN112485626B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102095572A (en) * | 2010-12-06 | 2011-06-15 | 广州市熠芯节能服务有限公司 | Product performance test method based on benchmarking product comparison |
| CN102938258A (en) * | 2012-11-30 | 2013-02-20 | 上海宏力半导体制造有限公司 | Semiconductor testing method |
| CN107515368A (en) * | 2017-08-17 | 2017-12-26 | 上海华岭集成电路技术股份有限公司 | A kind of method that test program limiting value is dynamically changed in microcircuit test |
| CN107833840A (en) * | 2017-10-27 | 2018-03-23 | 西安电子科技大学 | The method for testing junction temperature of AlGaN/GaN HEMTs |
| CN108037438A (en) * | 2017-12-13 | 2018-05-15 | 中国科学院新疆理化技术研究所 | The test method that a kind of total dose irradiation influences PMOSFET Negative Bias Temperature Instabilities |
| CN108334707A (en) * | 2018-02-09 | 2018-07-27 | 哈尔滨工业大学 | A kind of analysis method of single particle radiation silicon carbide power MOSFETs security boundary performance degradations |
| CN108333209A (en) * | 2018-02-28 | 2018-07-27 | 中国电子科技集团公司第十三研究所 | A kind of GaN HEMT acceleration service life test methods |
| CN109765471A (en) * | 2018-12-28 | 2019-05-17 | 上海交通大学 | Power semiconductor statistics of features test method |
Non-Patent Citations (1)
| Title |
|---|
| 电子元器件质量等级辨析;罗弘;《电子世界》;20130430;43-44 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112485626A (en) | 2021-03-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102004218B (en) | Chip acceptability testing method | |
| US9997455B2 (en) | Device architecture and method for precision enhancement of vertical semiconductor devices | |
| CN112485626B (en) | Quality grade classification method for power devices | |
| CN106646180A (en) | WAT threshold voltage test method and system | |
| CN106370996B (en) | A method of realizing that fuse trims using iterative method | |
| CN115099126A (en) | Method for automatically screening performance-related characteristic structure parameters of semiconductor device based on machine learning | |
| CN109324277B (en) | TDDB testing device of grid oxide layer in integrated circuit | |
| CN108333209B (en) | GaN HEMT accelerated life test method | |
| CN108051722A (en) | The lifetime estimation method and system of hot carrier injection effect | |
| CN105182218B (en) | A kind of circuit lifetime prediction technique based on acceleration Degradation path | |
| CN108344936B (en) | Test method of power semiconductor device | |
| CN117031237B (en) | Method and system for testing service life of semiconductor device | |
| DE102015204343A1 (en) | DEVICE FOR DETERMINING A SWITCHING STATUS, SWITCHING DEVICE, METHOD FOR DETERMINING A SWITCHING STATUS AND COMPUTER PROGRAM | |
| CN114065623A (en) | IGBT remaining life prediction method and related device | |
| CN102931113B (en) | Method and system for testing safe operating area of semiconductor device | |
| CN107622167B (en) | Collector current soft measurement method for grid control device | |
| CN109307831B (en) | TDDB test method for gate oxide layer in integrated circuit | |
| JP2014070895A (en) | Semiconductor device inspection method and inspection device | |
| CN105259404B (en) | A kind of method that the threshold voltage for generating current draw MOSFET is controlled based on leakage | |
| WO2020209110A1 (en) | Device parameter measurement method | |
| JP2013024671A (en) | Semiconductor integrated circuit test method, system, and program | |
| CN109164372B (en) | Method and device for predicting characteristic data of integrated circuit component | |
| CN106249120A (en) | Selection method for the Center Wafer of model data test | |
| CN105116303A (en) | Method for estimating number of times of testing required by 50% discharge voltage test | |
| CN108304630A (en) | Semiconductor devices flicker noise characterize data screening technique |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |