CN112484922A - Process chamber leakage rate detection method and semiconductor process equipment - Google Patents
Process chamber leakage rate detection method and semiconductor process equipment Download PDFInfo
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Abstract
The embodiment of the application provides a method for detecting the leakage rate of a process chamber and semiconductor process equipment, wherein the method comprises the following steps: determining whether the process chamber meets a leakage rate detection condition in real time, if so, setting a leakage rate detection indication parameter of the process chamber to indicate that leakage rate detection is required; monitoring the leakage rate detection indicating parameters of the process chambers in real time, and determining whether parallel process chambers of the process chambers exist or not when the leakage rate detection indicating parameters indicate that the leakage rate detection needs to be carried out; if so, marking the state of the process chamber as an off-line state when the process chamber does not have a wafer or the wafer in the process chamber leaves the process chamber due to the completion of the process operation aiming at the wafer; and performing leakage rate detection operation on the process chamber to obtain a detection result, and setting a leakage rate detection indication parameter of the process chamber to indicate that the leakage rate detection is not required. When the leakage rate of the process chamber is detected, the whole semiconductor process equipment does not need to be shut down, and the reduction of the productivity is avoided.
Description
Technical Field
The application relates to the field of semiconductor manufacturing, in particular to a method for detecting leakage rate of a process chamber and semiconductor process equipment.
Background
In the PVD fabrication process of IC wafers, leakage rate (ROR) detection of the process chamber is required periodically, for example, every day.
Currently, the entire semiconductor processing equipment is usually shut down so that all process chambers are in an offline state where the process cannot be performed, i.e., offline state, resulting in a reduction in throughput. When the leakage rate of any process chamber is detected, the whole semiconductor process equipment needs to be stopped. In addition, the ROR detection for the process chamber is triggered by the engineer manually performing corresponding operations, and the detection omission is easy to occur.
Disclosure of Invention
In order to overcome the problems in the related art, the application provides a method for detecting the leakage rate of a process chamber and semiconductor process equipment.
According to a first aspect of embodiments of the present application, there is provided a method for detecting a leak rate of a process chamber, comprising:
determining whether the process chamber meets a leakage rate detection condition in real time, and if so, setting a leakage rate detection indication parameter of the process chamber to indicate that leakage rate detection is required;
monitoring a leakage rate detection indicating parameter of the process chamber in real time, and determining whether a parallel process chamber of the process chamber exists or not when the leakage rate detection indicating parameter is monitored to indicate that the leakage rate detection is required, wherein the parallel process chamber of the process chamber is the other process chamber which has the same type as the process chamber and can execute the process task of the process chamber;
if so, identifying the state of the process chamber as an off-line state when the process chamber does not have a wafer or the wafer in the process chamber leaves the process chamber due to the completion of the process operation aiming at the wafer;
and performing leakage rate detection operation on the process chamber to obtain a detection result, and setting the leakage rate detection indication parameter of the process chamber to indicate that the leakage rate detection is not required.
According to a second aspect of embodiments of the present application, there is provided a semiconductor processing apparatus comprising:
the determining unit is configured to determine whether a process chamber of the semiconductor process equipment meets a leakage rate detection condition in real time, and if so, set a leakage rate detection indicating parameter of the process chamber to indicate that leakage rate detection is required; monitoring a leakage rate detection indicating parameter of the process chamber in real time, and determining whether a parallel process chamber of the process chamber exists or not when the leakage rate detection indicating parameter is monitored to indicate that the leakage rate detection is required, wherein the parallel process chamber of the process chamber is the other process chamber which has the same type as the process chamber and can execute the process task of the process chamber;
the identification unit is configured to identify the state of the process chamber as an off-line state when a wafer does not exist in the process chamber or after the wafer in the process chamber leaves the process chamber due to the completion of the process operation for the wafer if the parallel process chamber of the process chamber exists;
and the detection unit is configured to execute a leakage rate detection operation on the process chamber to obtain a detection result, and set a leakage rate detection indication parameter of the process chamber to indicate that the leakage rate detection is not required.
According to the method for detecting the leakage rate of the process chamber and the semiconductor process equipment, whether the process chamber meets the leakage rate detection condition or not is determined in real time, and if yes, the leakage rate detection indication parameter of the process chamber is set to indicate that the leakage rate detection is required; monitoring the leakage rate detection indicating parameters of the process chambers in real time, and determining whether parallel process chambers of the process chambers exist or not when the leakage rate detection indicating parameters indicate that the leakage rate detection needs to be carried out; if so, marking the state of the process chamber as an off-line state when the process chamber does not have a wafer or the wafer in the process chamber leaves the process chamber due to the completion of the process operation aiming at the wafer; the technical scheme that the leakage rate detection operation is performed on the process chambers to obtain the detection result, and the leakage rate detection indication parameters of the process chambers are set to indicate that the leakage rate detection is not needed is realized, the whole semiconductor process equipment does not need to be shut down for any one-time ROR detection of any one process chamber, and the condition that the productivity is reduced due to the fact that the whole semiconductor process equipment needs to be shut down during the ROR detection of the process chambers is avoided. The leakage rate detection is required according to the monitored leakage rate detection indication parameter indication of the process chamber, whether the leakage rate detection can be carried out on the process chamber or not is automatically judged, manual intervention is not required, and the condition of missing detection possibly caused by triggering ROR detection on the process chamber by an engineer through corresponding operation in a manual mode is avoided.
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The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present application and together with the description, serve to explain the principles of the application.
FIG. 1 is a flow chart illustrating a method for detecting a leak rate of a process chamber according to an embodiment of the present disclosure;
FIG. 2 shows a schematic flow diagram of ROR detection for a process chamber;
fig. 3 is a block diagram of a semiconductor processing apparatus according to an embodiment of the present disclosure.
Detailed Description
The present application will be described in further detail with reference to the following drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the relevant invention and not restrictive of the invention. It should be noted that, for convenience of description, only the portions related to the related invention are shown in the drawings.
It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict. The present application will be described in detail below with reference to the embodiments with reference to the attached drawings.
Fig. 1 is a flowchart illustrating a method for detecting a leak rate of a process chamber according to an embodiment of the present application, the method including:
For any one process chamber, the ROR detection may be performed using steps 101-104. Step 101-104 is an exemplary operation performed during ROR detection for one process chamber at a time.
The leak rate detection indication parameter may be referred to as an ROR detection indication parameter. Before performing step 101, a ROR detection indicative parameter for the process chamber may be initialized to indicate that ROR detection is not required.
The ROR detection indication parameter may be a number, a string, or the like. For example, when one ROR detection indication parameter is "Yes", the ROR detection indication parameter indicates that ROR detection is required. When one ROR detection indicating parameter is "No", the ROR detection indicating parameter indicates that ROR detection is not necessary.
In the present application, for any process chamber that may need ROR detection, whether the process chamber meets the leak rate detection condition may be determined in real time.
When it is detected that one process chamber satisfies the leak rate detection condition, the ROR detection indication parameter of the process chamber may be set to indicate that ROR detection is required, for example, the ROR detection indication parameter is set to "Yes".
The leak rate detection condition may be: the current time is the detection time of the process chamber. The current time may refer to a time at which it is monitored whether the process chamber meets the leak rate detection condition.
For any one process chamber, a plurality of detection timings of the process chamber may be preset.
For a process chamber, each time the current moment is detected to be a detection moment of the process chamber, it can be determined that the leak rate detection condition is met, and the ROR detection indication parameter of the process chamber is set to indicate that ROR detection is required.
In some embodiments, the time interval between any two chronologically adjacent detection times of the process chamber is a predetermined length of time.
For any process chamber which needs to carry out ROR detection at certain time intervals, the time interval between any two detection moments adjacent in time sequence of the process chamber can be set, and meanwhile, the earliest detection moment of the process chamber is set, and the detection moment of any process chamber after the earliest detection moment of the process chamber can be determined according to the time interval between the earliest detection moment of the process chamber and any two detection moments adjacent in time sequence of the process chamber.
In some embodiments, the leak rate detection condition includes the following condition items: the current moment is the detection moment of the process chamber, the automatic ROR detection function of the process chamber is in an open state, and the process chamber is in an online state.
In this application, an online state is a state in which a process operation may be performed in a process chamber.
When each of the condition items in the leak rate detection condition is satisfied, it may be determined that the leak rate detection condition is satisfied. That is, the current time is the detection time of the process chamber, the automatic ROR detection function of the process chamber is in an on state, and the process chamber is in an on-line state, it may be determined that the process chamber satisfies the leak rate detection condition.
And 102, monitoring the leakage rate detection indicating parameters of the process chambers in real time, and determining whether the parallel process chambers of the process chambers exist or not when the leakage rate detection indicating parameters indicate that the leakage rate detection is required.
In the application, the ROR detection indicating parameter of any process chamber can be monitored in real time during the operation process of the semiconductor process equipment.
In the present application, the parallel process chambers of the process chambers are other process chambers of the same type as the process chambers, which may perform the process tasks of the process chambers.
For a process chamber, when the leakage rate detection indicating parameter of the process chamber indicates that the leakage rate detection is required by monitoring the leakage rate detection indicating parameter of the process chamber in real time, whether the parallel process chambers of the process chamber exist or not can be determined.
In the present application, the down state is a state in which a process operation in the process chamber is not possible.
For a process chamber, during ROR detection for the process chamber, a corresponding process operation cannot be performed in the process chamber.
During the process of performing the process task, it may happen that the process chamber needs to perform the ROR detection, and then the performance of the corresponding process task is affected.
At this time, if there are parallel process chambers of the process chamber, the scheduling system may allocate the process tasks to the corresponding parallel process chambers to be executed. Thus, the performance of the process task is not affected during the ROR detection of the process chamber.
In the present application, if there is a parallel process chamber of the process chambers and there is no wafer in the process chambers, the status of the process chambers may be directly identified as an off-line status.
In the present application, if there is a parallel process chamber of the process chambers and there is a wafer in the process chambers, the wafer leaves the process chambers after the process operation for the wafer in the process chambers is completed, and then the state of the process chambers is identified as an offline state.
In some embodiments, further comprising: and if the parallel process chambers of the process chambers do not exist, generating alarm information. The alarm information indicates that parallel process chambers of the process chamber cannot be scheduled and may be presented via a display device. The engineer may be tasked with ROR detection for the process chamber after seeing the alarm message.
And 104, performing leakage rate detection operation on the process chamber to obtain a detection result, and setting a leakage rate detection indication parameter of the process chamber to indicate that leakage rate detection is not required.
And after the state of the process chamber is identified as the off-line state, performing ROR detection operation on the process chamber to obtain a detection result.
Performing the ROR detection operation on the process chamber may calculate a current ROR of the process chamber. The current ROR of the process chamber may then be compared to a ROR threshold. When the current ROR is smaller than the ROR threshold value, the obtained detection result is that the ROR of the process chamber is normal. When the current ROR is equal to or greater than the ROR threshold, the obtained detection result is an ROR abnormality of the process chamber.
In the present application, after the ROR detection operation is performed on the process chamber and the detection result is obtained, the leak rate detection indication parameter of the process chamber may be set to indicate that ROR detection is not required.
After the leak rate detection indication parameter of the process chamber is set to indicate that the ROR detection is not required, when the process chamber meets the leak rate detection condition again, the leak rate detection indication parameter of the process chamber is set to indicate that the leak rate detection is required again, and step 101 and step 104 are executed again to perform the ROR detection on the process chamber again.
In some embodiments, further comprising: when the detection result is that the leakage rate is abnormal, generating leakage rate abnormal prompt information; and when the detection result is that the leakage rate is normal, identifying the state of the process chamber as an online state.
And when the detection result is that the leakage rate is abnormal, generating leakage rate abnormity prompt information, wherein the leakage rate abnormity prompt information indicates that the operation of solving the leakage rate abnormity needs to be carried out aiming at the process chamber. The reminder information may be presented via a display device. After seeing the prompt message of the leakage rate abnormity, the engineer can perform operations for solving the leakage rate abnormity, such as maintenance, part replacement and the like, so as to solve the leakage rate abnormity.
When the detection result is that the leakage rate is normal, the state of the process chamber can be marked as an online state, so that the process task is continuously executed by using the process chamber.
In some embodiments, further comprising: after the operation for solving the leakage rate abnormity is completed, performing leakage rate detection operation on the process chamber again to obtain a secondary detection result; when the detection result is still the abnormal leakage rate, generating the prompt message of the abnormal leakage rate again; and when the secondary detection result is that the leakage rate is normal, identifying the state of the process chamber as an online state.
And after the operation for solving the leakage rate abnormity is completed, performing ROR detection operation on the process chamber again to obtain a secondary detection result. When the detection result is still the leakage rate abnormity, namely the secondary detection result is the leakage rate abnormity, the leakage rate abnormity prompting information is generated again to prompt an engineer to continuously check the problem of the abnormal leakage rate of the process chamber, and after the operation for solving the leakage rate abnormity is executed again, the ROR detection operation is continuously carried out on the process chamber until the detection result obtained by the ROR detection operation executed at a certain time is the normal leakage rate.
After the operation of solving the leakage rate abnormity is completed, when the secondary detection result is that the leakage rate is normal, the process chamber is marked to be in an online state, so that the process task is continuously executed by utilizing the process chamber.
Referring to fig. 2, a flow chart of ROR detection for a process chamber is shown.
PendingAutoROR represents the ROR detection indicative parameter of the process chamber. When ROR detection is required, Pending AutoROR is "Yes".
When it is monitored that PendingAutoROR of one process chamber is set to "Yes", it is determined whether there is a parallel process chamber of the process chamber. And if the parallel process chambers of the process chambers do not exist, generating alarm information.
If the parallel process chambers of the process chamber exist, further under the condition that no wafer exists in the process chamber or the wafer in the process chamber leaves the process chamber due to the completion of the process operation aiming at the wafer, the state of the process chamber is marked as offline, and then ROR detection operation is performed on the process chamber. The current ROR of the process chamber may be compared to a ROR threshold. When the current ROR is smaller than the ROR threshold value, the obtained detection result is that the ROR of the process chamber is normal. The process chamber may be identified as online.
When the current ROR is equal to or greater than the ROR threshold, the obtained detection result is an ROR abnormality of the process chamber. When the detection result is that the leakage rate is abnormal, prompt information can be generated, and the prompt information indicates that the operation for solving the leakage rate abnormality needs to be carried out aiming at the process chamber. The reminder information may be presented via a display device. After seeing the prompt, the engineer may perform operations to resolve the leak rate anomaly. And after the operation for solving the leakage rate abnormity is completed, performing ROR detection operation on the process chamber again to obtain a secondary detection result. And when the secondary detection result is that the leakage rate is normal, marking the process chamber as online, namely an online state. And when the detection result is still abnormal in leakage rate, namely the detection result is abnormal in leakage rate again, generating the prompt information of abnormal leakage rate again, and continuing to perform ROR detection operation on the process chamber after the operation for solving the abnormal leakage rate is executed again.
Referring to fig. 3, a block diagram of a semiconductor processing apparatus according to an embodiment of the present disclosure is shown. The semiconductor processing equipment comprises: a determination unit 301, an identification unit 302, and a detection unit 303.
The determining unit 301 is configured to determine whether a process chamber of the semiconductor process equipment meets a leak rate detection condition in real time, and if so, set a leak rate detection indicating parameter of the process chamber to indicate that leak rate detection is required; monitoring a leakage rate detection indicating parameter of the process chamber in real time, and determining whether a parallel process chamber of the process chamber exists or not when the leakage rate detection indicating parameter is monitored to indicate that the leakage rate detection is required, wherein the parallel process chamber of the process chamber is the other process chamber which has the same type as the process chamber and can execute the process task of the process chamber;
the identification unit 302 is configured to identify a status of the process chamber as an off-line status when there is no wafer in the process chamber or after the wafer in the process chamber leaves the process chamber due to a completion of a process operation for the wafer, if there is a parallel process chamber of the process chamber;
the detection unit 303 is configured to perform a leak rate detection operation on the process chamber, obtain a detection result, and set a leak rate detection indication parameter of the process chamber to indicate that leak rate detection is not required.
In some embodiments, the leak rate detection condition includes the following condition items: the current moment is the detection moment of the process chamber, the automatic leakage rate detection function of the process chamber is in an opening state, and the process chamber is in an online state.
In some embodiments, the time interval between any two chronologically adjacent detection times of the process chamber is a predetermined length of time.
In some embodiments, the determination unit 301 is further configured to generate alarm information if there is no parallel process chamber of the process chambers.
In some embodiments, the identifying unit 302 is further configured to generate a leak rate abnormality prompt message when the detection result is that the leak rate is abnormal; and when the detection result is that the leakage rate is normal, identifying the state of the process chamber as an online state.
In some embodiments, the detecting unit 303 is further configured to perform the leak rate detection operation on the process chamber again after the operation for solving the leak rate abnormality is performed, so as to obtain a re-detection result; when the detection result is still the abnormal leakage rate, generating the prompt message of the abnormal leakage rate again; and when the secondary detection result is that the leakage rate is normal, identifying the state of the process chamber as an online state.
Other embodiments of the present application will be apparent to those skilled in the art from consideration of the specification and practice of the application disclosed herein. This application is intended to cover any variations, uses, or adaptations of the invention following, in general, the principles of the application and including such departures from the present disclosure as come within known or customary practice within the art to which the invention pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the application being indicated by the following claims.
It will be understood that the present application is not limited to the precise arrangements described above and shown in the drawings and that various modifications and changes may be made without departing from the scope thereof. The scope of the application is limited only by the appended claims.
Claims (10)
1. A method for detecting a leak rate of a process chamber, the method comprising:
determining whether the process chamber meets a leakage rate detection condition in real time, and if so, setting a leakage rate detection indication parameter of the process chamber to indicate that leakage rate detection is required;
monitoring a leakage rate detection indicating parameter of the process chamber in real time, and determining whether a parallel process chamber of the process chamber exists or not when the leakage rate detection indicating parameter is monitored to indicate that the leakage rate detection is required, wherein the parallel process chamber of the process chamber is the other process chamber which has the same type as the process chamber and can execute the process task of the process chamber;
if so, identifying the state of the process chamber as an off-line state when the process chamber does not have a wafer or the wafer in the process chamber leaves the process chamber due to the completion of the process operation aiming at the wafer;
and performing leakage rate detection operation on the process chamber to obtain a detection result, and setting the leakage rate detection indication parameter of the process chamber to indicate that the leakage rate detection is not required.
2. The method of claim 1, wherein the leak rate detection condition comprises the following condition: the current time is the detection time of the process chamber, the automatic leakage rate detection function of the process chamber is in an open state, and the process chamber is in an online state.
3. The method of claim 2, wherein the time interval between any two chronologically adjacent detection instants of the process chamber is a predetermined length.
4. The method of claim 1, further comprising:
and if the parallel process chamber of the process chamber does not exist, generating alarm information.
5. The method of claim 1, further comprising:
when the detection result is that the leakage rate is abnormal, generating leakage rate abnormal prompt information;
and when the detection result is that the leakage rate is normal, identifying the state of the process chamber as an online state.
6. The method of claim 1, further comprising:
after the operation for solving the leakage rate abnormity is completed, performing leakage rate detection operation on the process chamber again to obtain a secondary detection result;
when the detection result is still the abnormal leakage rate, generating the prompt message of the abnormal leakage rate again;
and when the secondary detection result is that the leakage rate is normal, identifying the state of the process chamber as an online state.
7. A semiconductor processing apparatus, comprising:
the determining unit is configured to determine whether a process chamber of the semiconductor process equipment meets a leakage rate detection condition in real time, and if so, set a leakage rate detection indicating parameter of the process chamber to indicate that leakage rate detection is required; monitoring a leakage rate detection indicating parameter of the process chamber in real time, and determining whether a parallel process chamber of the process chamber exists or not when the leakage rate detection indicating parameter is monitored to indicate that the leakage rate detection is required, wherein the parallel process chamber of the process chamber is the other process chamber which has the same type as the process chamber and can execute the process task of the process chamber;
the identification unit is configured to identify the state of the process chamber as an off-line state when a wafer does not exist in the process chamber or after the wafer in the process chamber leaves the process chamber due to the completion of the process operation for the wafer if the parallel process chamber of the process chamber exists;
and the detection unit is configured to execute a leakage rate detection operation on the process chamber to obtain a detection result, and set a leakage rate detection indication parameter of the process chamber to indicate that the leakage rate detection is not required.
8. The apparatus of claim 7, wherein the leak rate detection condition comprises the following condition: the current moment is the detection moment of the process chamber, the automatic leakage rate detection function of the process chamber is in an opening state, and the process chamber is in an online state.
9. The apparatus of claim 8, wherein the time interval between any two chronologically adjacent detection instants of the process chamber is a predetermined length.
10. The apparatus of claim 7, wherein the determination unit is further configured to generate a warning message if there are no parallel process chambers of the process chambers.
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| CN115261797A (en) * | 2022-08-31 | 2022-11-01 | 北京北方华创微电子装备有限公司 | Method for detecting leakage rate of cavity |
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| CN115261797A (en) * | 2022-08-31 | 2022-11-01 | 北京北方华创微电子装备有限公司 | Method for detecting leakage rate of cavity |
| CN115261797B (en) * | 2022-08-31 | 2023-11-14 | 北京北方华创微电子装备有限公司 | Cavity leak rate detection method |
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