CN112484902A - Capacitive pressure sensor and temperature drift solution - Google Patents

Capacitive pressure sensor and temperature drift solution Download PDF

Info

Publication number
CN112484902A
CN112484902A CN202011477111.3A CN202011477111A CN112484902A CN 112484902 A CN112484902 A CN 112484902A CN 202011477111 A CN202011477111 A CN 202011477111A CN 112484902 A CN112484902 A CN 112484902A
Authority
CN
China
Prior art keywords
pressure sensor
capacitive
temperature
output voltage
capacitive pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN202011477111.3A
Other languages
Chinese (zh)
Other versions
CN112484902B (en
Inventor
葛文伟
方宇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jilin University
Original Assignee
Jilin University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jilin University filed Critical Jilin University
Priority to CN202011477111.3A priority Critical patent/CN112484902B/en
Publication of CN112484902A publication Critical patent/CN112484902A/en
Application granted granted Critical
Publication of CN112484902B publication Critical patent/CN112484902B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/12Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in capacitance, i.e. electric circuits therefor
    • G01L9/125Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in capacitance, i.e. electric circuits therefor with temperature compensating means

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

The invention relates to the field of pressure sensors, in particular to a capacitive pressure sensor and a temperature drift solution, wherein the temperature drift solution of the capacitive pressure sensor comprises the following steps: placing the capacitive pressure sensor in an environment to be measured, measuring a first output voltage of the capacitive pressure sensor under the condition of no applied pressure, and obtaining a temperature value under the condition of no applied pressure by the first output voltage; maintaining the temperature of the pressure measuring environment unchanged, applying a set pressure to the capacitive pressure sensor, measuring an output voltage value when the output voltage is stable, and obtaining a pressure value at the temperature value according to the temperature value and the output voltage value; the invention has the beneficial effects that: the temperature of the capacitor medium is firstly solved through the temperature drift solution method, and then the pressure is solved according to the temperature, so that the temperature drift problem is solved, and the accuracy is improved; the piezoelectric ceramic is used as a capacitance medium, so that the problems of vacuumizing between electrodes and electrode extraction in vacuum do not need to be considered, and the deformation capacity of an elastic medium between the electrodes does not need to be considered.

Description

Capacitive pressure sensor and temperature drift solution
Technical Field
The invention relates to the field of pressure sensors, in particular to a capacitive pressure sensor and a temperature drift solution.
Background
The pressure sensor is an output device which converts sensed pressure signals into electric signals according to a certain rule, and is widely applied to various industries such as aerospace, military industry, electric power, water conservancy and hydropower. Pressure sensors can be classified into piezoresistive, capacitive, and piezoelectric types according to the measurement principle, and the pressure change affects the resistance, capacitance, and voltage change of the sensors, respectively.
The piezoresistive pressure sensor has the advantages of simple manufacturing process, good linearity and the like, and occupies more than half of the market of the miniature pressure sensor; however, the requirements on design and processing technology are high, the power consumption is high, and the application in the technology of the internet of things is not facilitated, so that people are prompted to research other types of pressure sensors, such as capacitive pressure sensors.
The basic structure of the capacitive pressure sensor is composed of two polar plates, one is a fixed polar plate and is processed on a substrate, the other is a movable electrode and is a sensitive film which can be deformed under pressure, and the space between the two electrodes is vacuumized or an insulating film is used as a medium to keep the dielectric constant unchanged. When pressure is applied, the distance between the movable polar plate and the fixed polar plate is changed, so that capacitance between the polar plates is changed, and then the capacitance change is converted into a usable electric signal through the detection circuit and the rectification circuit, so that the conversion from the pressure to the electric signal is realized.
The change in capacitance due to the applied pressure is small and the capacitive pressure sensor is susceptible to distributed and stray capacitance from the leads. Therefore, the micro-capacitance measuring circuit is an indispensable part of the capacitive pressure sensor, and includes circuits such as a pulse modulation method, an operational amplifier method, a charge injection method, a switched capacitor method, and the like, wherein the operational amplifier method has the advantages of overcoming nonlinearity, low temperature drift, high signal-to-noise ratio, and the like, and is often selected as a detection circuit of the capacitive pressure sensor.
The capacitive pressure sensor is a hot spot of domestic and foreign research. The high-power-consumption high-sensitivity high-power-consumption device has the advantages of good stability, high sensitivity, good dynamic response characteristic and the like, and has the most outstanding advantages of small self heat productivity, low enough power consumption and great temptation for low-power-consumption devices and portable electronic systems. Meanwhile, the interface circuit is integrated on a chip, so that the influence of parasitic capacitance can be avoided. However, the dielectric constant of the medium between the variable-pitch capacitive electrode plates must be kept constant, two methods are usually adopted to realize the constant dielectric constant, one is a method of vacuumizing the middle layer, which brings the problem of good sealing performance, and in the manufacturing process of the sensor chip, a cavity structure is usually formed by sacrificial layer release, electrostatic bonding or silicon-silicon direct bonding, but the residual stress is difficult to control. The bonding or bonding method adopted by chip scale packaging is faced with chronic air leakage and fatigue failure, and also has the problem of thermal matching of connecting materials, and the problem of leading out electrodes from the sealing cavity is also a difficult problem. In another method, an insulating film is used as an intermediate layer, and the pressure can deform the insulating film to change the distance between the two electrode plates, but the method also has many problems, such as the influence of the elastic property of the film on the sensitivity, the process cost, the change of the microstructure of the film, the adhesion of the film and the electrode and the like. Packaging problems and changing the deformation properties of the insulating layer are major problems facing current commercialization of capacitive pressure sensors.
The intermediate layer of the sensor in the prior art is small in volume, and when the external pressure changes, the intermediate layer needs large-volume change to balance the pressure change, so that the change of the distance between the polar plates and the pressure change are in a nonlinear relation. Moreover, capacitance is inversely proportional to plate spacing and is an inherent nonlinearity of variable-pitch capacitors, both of which result in measurement inaccuracies.
To solve the above problem, the university of southeast university, zhominxin et al, proposes a "sandwich" structure based on dielectric strain effect, refer to fig. 3, but this structure has a temperature drift problem. Based on a sandwich structure, the afterglow ocean of Nanjing university of industry proposes that two materials are used as an insulating medium of a capacitor to solve the temperature drift problem, but in the calculation process of the method, two solutions may occur, namely C1 and C2 measured by the two materials, under the same temperature, the solution may occur that F1 and F2 both satisfy the equation, two pressure values occur, refer to FIG. 4, and measurement errors are caused.
Therefore, the invention is particularly important for the capacitive pressure sensor which does not consider the deformation performance of the packaging and the insulating film, improves the linearity and solves the temperature drift problem.
Disclosure of Invention
The present invention is directed to a capacitive pressure sensor and a temperature drift solution, so as to solve the problems mentioned in the background art.
In order to achieve the purpose, the invention provides the following technical scheme:
a temperature drift solution of a capacitive pressure sensor comprises the following steps: placing the capacitive pressure sensor in an environment to be measured, measuring a first output voltage of the capacitive pressure sensor under the condition of no applied pressure, and obtaining a temperature value under the condition of no applied pressure by the first output voltage;
and maintaining the temperature of the pressure measuring environment unchanged, applying set pressure to the capacitive pressure sensor, measuring the output voltage value when the output voltage is stable, and obtaining the pressure value at the temperature value according to the temperature value and the output voltage value.
As a further scheme of the invention: the set pressure value is any natural number greater than zero.
The invention provides another technical scheme that: a capacitive pressure sensor comprises a capacitance medium, electrodes and a substrate, wherein the capacitance medium separates two electrodes which are oppositely arranged on the substrate, and the capacitance medium is piezoelectric ceramic.
As a still further scheme of the invention: the electrode comprises an upper electrode and a lower electrode, the substrate comprises an upper substrate and a lower substrate, and the lower substrate, the lower electrode, the capacitance medium, the upper electrode and the upper substrate are sequentially arranged.
As a still further scheme of the invention: the substrate is made of an insulating material.
As a still further scheme of the invention: the electrode is made of a metal material.
As a still further scheme of the invention: the two surfaces of the piezoelectric ceramic are parallel to the two surfaces of the electrode.
As a still further scheme of the invention: the dead area of the two electrodes is not zero.
As a still further scheme of the invention: the two electrodes are connected with a detection circuit, and the detection circuit is used for amplifying the electric signals generated by the electrodes and transmitting the electric signals to the control end.
Compared with the prior art, the invention has the beneficial effects that: the temperature of the capacitor medium is firstly solved through the temperature drift solution method, and then the pressure is solved according to the temperature, so that the temperature drift problem is solved, and the accuracy is improved; the piezoelectric ceramic is used as a capacitance medium, so that the problems of vacuumizing between electrodes and electrode extraction in vacuum do not need to be considered, and the deformation capacity of an elastic medium between the electrodes does not need to be considered.
Drawings
Fig. 1 is a schematic structural diagram of a capacitive pressure sensor according to an embodiment of the present invention.
FIG. 2 shows a piezoelectric ceramic (BaTi) in an embodiment of the present invention0.96Zr0.04O3) Is plotted against pressure and temperature.
Fig. 3 is a schematic structural diagram of a capacitive pressure sensor with a sandwich structure in the prior art.
Fig. 4 is a graph of pressure and temperature changes for two materials with capacitance in the prior art.
Fig. 5 is a schematic circuit diagram of a detection circuit of the capacitive pressure sensor according to an embodiment of the present invention.
In the drawings: 1. a capacitive medium; 2. an electrode; 3. a substrate; 4. a sandwich structure; 5. a vacuum chamber.
Detailed Description
Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, like numbers in different drawings represent the same or similar elements unless otherwise indicated. The implementations described in the exemplary embodiments below are not intended to represent all implementations consistent with the present disclosure. Rather, they are merely examples of apparatus and methods consistent with certain aspects of the present disclosure, as detailed in the appended claims.
Referring to fig. 1, in an embodiment of the present invention, a method for solving temperature drift of a capacitive pressure sensor includes the following steps: placing the capacitive pressure sensor in an environment to be measured, measuring a first output voltage of the capacitive pressure sensor under the condition of no applied pressure, and obtaining a temperature value under the condition of no applied pressure by the first output voltage;
and maintaining the temperature of the pressure measuring environment unchanged, applying set pressure to the capacitive pressure sensor, measuring the output voltage value when the output voltage is stable, and obtaining the pressure value at the temperature value according to the temperature value and the output voltage value.
Specifically, S1, in order to eliminate the influence of pressure on the dielectric constant, the capacitive pressure sensor is placed in an environment to be measured in pressure without applying pressure on the piezoelectric ceramic; then recording the output voltage of the capacitance type pressure sensor as a first output voltage V after the output voltage is stabilized1At the moment, a certain time is needed for keeping the pressure measuring environment temperature consistent with the temperature of the piezoelectric ceramics, so that the output voltage is required to be stable and then recorded; and the recorded first output voltage V1Is output through a detection circuit, see FIG. 5, having the formula (1)
Figure BDA0002835956580000041
The input voltage V can be known from the above formulaiReference capacitor C0Constant and capacitance C of piezoelectric ceramic BbHas a linear relation with the dielectric constant epsilon, so that the output voltage V0In linear relation to the dielectric constant epsilon, and referring to fig. 2, the pressure P is approximately linear in relation to the dielectric constant epsilon, so that the output voltage V0Is also linear with the pressure P; then, the V is put1Substituted into U1~f1(T) an equation, wherein the parameters can be obtained through calibrated values; and obtaining the value of the temperature T of the piezoelectric ceramic.
S2, keeping the temperature of the pressure measuring environment unchanged, applying pressure to the piezoelectric ceramics, and waiting for the output voltage U of the capacitance type pressure sensor2Recording the temperature T of the piezoelectric ceramics obtained in the first step and the output voltage U of the capacitance type pressure sensor after the temperature T is stabilized2Substituted into U2~f2And (P, T) equation, calculating the pressure value P at the temperature T of the piezoelectric ceramic.
U1~f1(T) equation:
Figure BDA0002835956580000051
U2~f2(P, T) equation: u shape2=(3.5-0.3T)*P+T+343
In conclusion, the temperature of the capacitor medium is firstly obtained by the temperature drift solution method, and then the pressure intensity is obtained according to the temperature, so that the temperature drift problem is solved, and the accuracy is improved.
In addition, as shown in fig. 3, in the capacitive pressure sensor with a sandwich structure in the prior art, a vacuum cavity 5 is formed by sealing a sandwich structure 4 consisting of multiple layers of insulating films and a substrate 3, and the sealing performance of the vacuum cavity 5 needs to be considered.
Further, the set pressure value is any natural number greater than zero.
In the embodiment of the invention, the dielectric constant epsilon of the piezoelectric ceramic shows an approximately linear rule along with the change of the pressure P, refer to a in figure 2, and be in addition according to a formula (2)
Figure BDA0002835956580000052
It can be known that when the area a and the thickness d of the opposite surface of the piezoceramic electrode are not changed, the capacitance C changes linearly with the dielectric constant epsilon, and in a of fig. 2, the rule of the dielectric constant epsilon changes with the pressure P is not consistent at room temperature and 100 ℃, which is a temperature drift problem commonly existing in the capacitive pressure sensor made by the pressure sensing mechanism, and referring to b of fig. 2, it can be seen from b of fig. 2 that the temperature also has an influence on the dielectric constant epsilon.
Referring to fig. 1, in another embodiment of the present invention, a capacitive pressure sensor includes a capacitive medium 1, electrodes 2 and a substrate 3, where the capacitive medium 1 separates two electrodes 2 oppositely disposed on the substrate 3, and the capacitive medium 1 is piezoelectric ceramic.
Specifically, the electrode 2 includes an upper electrode 2a and a lower electrode 2b, the substrate includes an upper substrate 3a and a lower substrate 3b, and the lower substrate 3b, the lower electrode 2b, the capacitor medium 1, the upper electrode 2a, and the upper substrate 3a are sequentially disposed.
The capacitor medium is piezoelectric ceramic, and the substrate is made of an insulating material; the electrode is made of a metal material.
The insulating material can be glass, polyethylene terephthalate (PET), Polytetrafluoroethylene (PTFE) or other materials with similar or identical insulating ability. The electrode can be made of copper or copper alloy, aluminum or aluminum alloy, or gold, silver or other conductive materials.
In the formula (2), the capacitance C linearly changes along with the dielectric constant epsilon, and corresponding parameters need to be calibrated, namely the dead-against area A of the two electrodes and the distance d between the two electrodes are ensured to be unchanged. Specifically, two surfaces of the piezoelectric ceramic are parallel to two surfaces of the electrode. The thickness of the piezoelectric ceramics is consistent, and the electrodes plated on the two parallel surfaces are parallel to each other, so that the distance d between the two electrodes in the formula (2) is kept unchanged.
The dead area of the two electrodes is not zero. The positive facing area A of the two electrodes in the formula (2) is ensured to be unchanged.
In summary, under the action of pressure, the dielectric constant epsilon of the piezoelectric ceramic changes, and then the change of the capacitance C is caused, according to the formula (2), the change of the capacitance C and the change of the dielectric constant epsilon have a linear relation, so the invention overcomes the inherent nonlinearity of the traditional variable-pitch capacitive pressure sensor.
The two electrodes are connected with a detection circuit, and the detection circuit is used for amplifying the electric signals generated by the electrodes and transmitting the electric signals to the control end.
The working principle of the invention is as follows: under the condition of not applying pressure to the piezoelectric ceramic, placing the capacitive pressure sensor in an environment to be measured in pressure; then recording the output voltage of the capacitance type pressure sensor as a first output voltage V after the output voltage is stabilized1At the moment, a certain time is needed for keeping the pressure measuring environment temperature consistent with the temperature of the piezoelectric ceramics, so that the output voltage is required to be stable and then recorded; and the recorded first output voltage V1Is output through a detection circuit, see FIG. 5, have
Figure BDA0002835956580000061
The input voltage V can be known from the above formulaiReference capacitor C0Constant and capacitance C of piezoelectric ceramic BbHas a linear relation with the dielectric constant epsilon, so that the output voltage V0In linear relation to the dielectric constant epsilon, and referring to fig. 2, the pressure P is approximately linear in relation to the dielectric constant epsilon, so that the output voltage V0Is also linear with the pressure P; then by V1And calculating to obtain the value of the temperature T of the piezoelectric ceramics. Keeping the temperature of the pressure measuring environment unchanged, applying pressure to the piezoelectric ceramic, and waiting for the output voltage U of the capacitance type pressure sensor2Recording the temperature T of the piezoelectric ceramics obtained in the first step and the output voltage U of the capacitance type pressure sensor after the temperature T is stabilized2Substituting the pressure value P into the correlation equation to calculate the pressure value P under the temperature T of the piezoelectric ceramics. Through the pressure value P, the piezoelectric ceramic temperature T and the piezoelectric ceramic temperature T, testing and using parameters of the capacitive pressure sensor are obtained, and therefore the detection accuracy of the capacitive pressure sensor is improved.
It should be noted that the detection circuit adopted by the present invention is an application of the prior art, and those skilled in the art can implement the intended function according to the related description, or implement the technical features required to be accomplished by the similar technology, and will not be described in detail herein.
Other embodiments of the disclosure will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure herein. This application is intended to cover any variations, uses, or adaptations of the disclosure following, in general, the principles of the disclosure and including such departures from the present disclosure as come within known or customary practice within the art to which the disclosure pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the disclosure being indicated by the following claims.
It will be understood that the present disclosure is not limited to the precise arrangements described above and shown in the drawings and that various modifications and changes may be made without departing from the scope thereof. The scope of the present disclosure is limited only by the appended claims.

Claims (9)

1. A temperature drift solution of a capacitive pressure sensor is characterized by comprising the following steps:
placing the capacitive pressure sensor in an environment to be measured, measuring a first output voltage of the capacitive pressure sensor under the condition of no applied pressure, and obtaining a temperature value under the condition of no applied pressure by the first output voltage;
and maintaining the temperature of the pressure measuring environment unchanged, applying set pressure to the capacitive pressure sensor, measuring the output voltage value when the output voltage is stable, and obtaining the pressure value at the temperature value according to the temperature value and the output voltage value.
2. The solution of temperature drift of the capacitive pressure sensor according to claim 1, wherein the set pressure value is any natural number greater than zero.
3. The capacitive pressure sensor applied to the temperature drift solution of claim 1 or 2 is characterized by comprising a capacitive medium, electrodes and a substrate, wherein the capacitive medium separates the two electrodes which are oppositely arranged on the substrate, and the capacitive medium is piezoelectric ceramic.
4. The capacitive pressure sensor according to claim 3, wherein the electrode comprises an upper electrode and a lower electrode, the substrate comprises an upper substrate and a lower substrate, and the lower substrate, the lower electrode, the capacitive medium, the upper electrode and the upper substrate are sequentially disposed.
5. The capacitive pressure sensor of claim 3, wherein the substrate is made of an insulating material.
6. The capacitive pressure sensor of claim 3, wherein the electrode is made of a metallic material.
7. The capacitive pressure sensor according to claim 3, wherein the two surfaces of the piezoceramic are parallel to the two surfaces of the electrode.
8. The capacitive pressure sensor of claim 3 wherein the facing area of the two electrodes is non-zero.
9. The capacitive pressure sensor according to claim 3, wherein the two electrodes are connected to a detection circuit, and the detection circuit is configured to amplify and transmit the electrical signal generated by the electrodes to the control terminal.
CN202011477111.3A 2020-12-15 2020-12-15 Capacitive pressure sensor and temperature drift solution Active CN112484902B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202011477111.3A CN112484902B (en) 2020-12-15 2020-12-15 Capacitive pressure sensor and temperature drift solution

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202011477111.3A CN112484902B (en) 2020-12-15 2020-12-15 Capacitive pressure sensor and temperature drift solution

Publications (2)

Publication Number Publication Date
CN112484902A true CN112484902A (en) 2021-03-12
CN112484902B CN112484902B (en) 2021-08-24

Family

ID=74917052

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202011477111.3A Active CN112484902B (en) 2020-12-15 2020-12-15 Capacitive pressure sensor and temperature drift solution

Country Status (1)

Country Link
CN (1) CN112484902B (en)

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4620438A (en) * 1983-12-15 1986-11-04 Texas Instruments Incorporated Cylinder pressure transmitter for an internal combustion engine
CN101019012A (en) * 2004-09-13 2007-08-15 株式会社电装 Piezoelectric sensor
CN203057505U (en) * 2012-12-13 2013-07-10 瑞声声学科技(常州)有限公司 Piezoelectric ceramic array film
US8984952B2 (en) * 2012-09-07 2015-03-24 Dynisco Instruments Llc Capacitive pressure sensor
CN107490454A (en) * 2017-09-21 2017-12-19 南京航伽电子科技有限公司 Pressure transmitter temperature-compensating output intent
CN107741285A (en) * 2017-10-12 2018-02-27 奇酷互联网络科技(深圳)有限公司 A kind of circuit board and temperature checking method
CN207487847U (en) * 2017-11-25 2018-06-12 吉林大学 A kind of piezoelectric capacitance combined type self-powered temperature field detection device
US20180266909A1 (en) * 2017-03-16 2018-09-20 Robert Bosch Gmbh Component having a micromechanical sensor module
CN111960817A (en) * 2020-08-28 2020-11-20 湛新星 Ceramic dielectric material for high-dielectric low-loss high-voltage-resistant capacitor and preparation method thereof

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4620438A (en) * 1983-12-15 1986-11-04 Texas Instruments Incorporated Cylinder pressure transmitter for an internal combustion engine
CN101019012A (en) * 2004-09-13 2007-08-15 株式会社电装 Piezoelectric sensor
US8984952B2 (en) * 2012-09-07 2015-03-24 Dynisco Instruments Llc Capacitive pressure sensor
CN203057505U (en) * 2012-12-13 2013-07-10 瑞声声学科技(常州)有限公司 Piezoelectric ceramic array film
US20180266909A1 (en) * 2017-03-16 2018-09-20 Robert Bosch Gmbh Component having a micromechanical sensor module
CN107490454A (en) * 2017-09-21 2017-12-19 南京航伽电子科技有限公司 Pressure transmitter temperature-compensating output intent
CN107741285A (en) * 2017-10-12 2018-02-27 奇酷互联网络科技(深圳)有限公司 A kind of circuit board and temperature checking method
CN207487847U (en) * 2017-11-25 2018-06-12 吉林大学 A kind of piezoelectric capacitance combined type self-powered temperature field detection device
CN111960817A (en) * 2020-08-28 2020-11-20 湛新星 Ceramic dielectric material for high-dielectric low-loss high-voltage-resistant capacitor and preparation method thereof

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
陈高华 等: "压电陶瓷传感器的灵敏度温漂误差补偿研究", 《传感技术学报》 *
鲍爱建: "可实现温度补偿的压电式微压传感器研究", 《中国优秀硕士学位论文全文数据库 信息科技辑》 *

Also Published As

Publication number Publication date
CN112484902B (en) 2021-08-24

Similar Documents

Publication Publication Date Title
Shirinov et al. Pressure sensor from a PVDF film
TWI648527B (en) An improved pressure sensor structure
KR102076515B1 (en) Method and Device for measuring a vacuum pressure using a measuring cell arrangement
US5186054A (en) Capacitive pressure sensor
US4523474A (en) Capacitive pressure sensor
JPS5855732A (en) Electrostatic capacity type pressure sensor
US7757563B2 (en) Capacitance manometers and methods of making same
CN111982383B (en) Differential pressure contact type MEMS capacitance film vacuum gauge
CN202304895U (en) Sputtered film chip for realizing simultaneous test of temperature and pressure signals
CN117268600A (en) MEMS pressure sensor chip and preparation method thereof
EP2075563A2 (en) High temperature capacitive static/dynamic pressure sensors
CN113175948A (en) Flexible integrated sensor and method for simultaneously measuring temperature, pressure and medium
US8739632B2 (en) Pressure sensor structure and associated method of making a pressure sensor
RU2603446C1 (en) Device for pressure and temperature measuring
CN112484902B (en) Capacitive pressure sensor and temperature drift solution
CN108896235A (en) A kind of MEMS flexibility copper-wanganese-constantan compounded super-high tension force snesor and manufacturing method
CN110186598B (en) Graphene film pressure sensor
CN112197854A (en) High-performance piezoelectric vibration sensor
CN217520622U (en) Capacitive sensitive chip structure with vertically arranged polar plates
CN112414609B (en) Pressure sensor based on thermopile principle
CN106813814B (en) A kind of pressure sensor based on MEMS terminal type microwave power detector structure
CN116448286A (en) Silicon resonance pressure sensor and online calibration method thereof
Sandrimani et al. Design and simulation of silicon on insulator based piezoresistive pressure sensor
JPH07174652A (en) Semiconductor pressure sensor and its manufacture as well as pressure detection method
CN111351596B (en) Capacitance type sensor for measuring temperature

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant