CN112480077B - Compound for organic luminescence and application thereof - Google Patents

Compound for organic luminescence and application thereof Download PDF

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CN112480077B
CN112480077B CN202011288029.6A CN202011288029A CN112480077B CN 112480077 B CN112480077 B CN 112480077B CN 202011288029 A CN202011288029 A CN 202011288029A CN 112480077 B CN112480077 B CN 112480077B
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田帅
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EverDisplay Optronics Shanghai Co Ltd
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Abstract

The invention relates to a compound for organic luminescence, which has a structure shown in a formula (I):

Description

Compound for organic luminescence and application thereof
Technical Field
The invention relates to the technical field of semiconductors, in particular to a compound for organic light emission and application thereof.
Background
The Organic Light Emission Diodes (OLED) device technology can be used for manufacturing novel display products and novel illumination products, and has a very wide application prospect. Generally consisting of two opposing electrodes and at least one layer of organic light-emitting compound interposed between the two electrodes. Electric charges are injected into an organic layer formed between an anode and a cathode to form electron and hole pairs, causing light emission from an organic compound having fluorescent or phosphorescent characteristics.
A Thermally Activated Delayed Fluorescence (TADF) material is a third generation organic light emitting material that has been developed following organic fluorescent materials and organic phosphorescent materials. Such materials generally have a small singlet-triplet energy level difference (Δ EST), and triplet excitons can be converted into singlet excitons for emission by intersystem crossing. This can make full use of singlet excitons and triplet excitons formed under electrical excitation, and the internal quantum efficiency of the device can reach 100%. Meanwhile, the material has controllable structure, stable property, low price and no need of precious metal, and has wide application prospect in the field of OLEDs.
However, most TADF phosphors exhibit a very broad emission spectrum, making them undesirable for display applications. Furthermore, the service life of TADF devices has not yet reached the industry standard for display applications. TADF devices also have serious efficiency degradation and lifetime problems at high luminance.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provides a compound for organic light emitting and application thereof.
In order to achieve the purpose, the invention adopts the technical scheme that:
the first aspect of the present invention provides a compound for organic light emission, the compound having a structure represented by formula (I):
Figure BDA0002783003640000021
wherein X is selected from one of carbonyl, oxygen atom or sulfur atom; the formula (I) is also connected with a substituent group through a C-C bond.
Preferably, the C-C bond is selected from CL1-CL2Key, CL2-CL3Bond or CL3-CL4One of the keys.
Preferably, the substituent group is selected from one of the structures shown in formula (II), formula (III) or formula (IV):
Figure BDA0002783003640000022
most preferably, the compound is selected from:
Figure BDA0002783003640000023
Figure BDA0002783003640000031
Figure BDA0002783003640000041
a second aspect of the present invention provides an organic light-emitting material comprising a compound as described above.
A third aspect of the invention provides a light-emitting layer comprising an organic light-emitting material as described above.
A fourth aspect of the invention provides an OLED device comprising a light-emitting layer as described above.
By adopting the technical scheme, compared with the prior art, the invention has the following technical effects:
the compound for organic light emission of the present invention contains both an electron donor (donor, D) and an electron acceptor (acceptor, a) within the molecule. The molecules with the D-A structure are beneficial to the space separation of HOMO and LUMO to obtain smaller S1State and T1Energy level difference of state (Delta Est)<0.2eV) to generate reverse system crossing, thereby improving the luminous efficiency of the OLED device. While the triplet energy level (T) of the compounds of the invention1) Is high in efficiency, is suitable for being used as a luminescent layer material, is beneficial to energy transfer between a host material and a guest material, and improves the exciton utilization rate.
The compound of the invention destroys the crystallinity of molecules by connecting different aromatic substituent groups, avoids stronger aggregation between molecules to improve the glass transition temperature of the material, and the good thermal stability of the material is beneficial to prolonging the service life of devices.
The compound has good application effect in OLED devices and good industrialization prospect.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict.
The present invention is further illustrated by the following examples, which are not to be construed as limiting the invention.
Examples
This example provides the above-described preparation method for an organic light-emitting compound.
Synthesis of an intermediate A:
Figure BDA0002783003640000051
adding raw materials (l0mmol) and p-dibromobenzene (8mmol, log) into a 100mL two-neck bottle, adding cuprous iodide (0.6mmol), potassium carbonate (10mmol), 1, 10-phenanthroline (0.6mmol) and 50mL of DMF under the condition of nitrogen, and reacting for 48 hours at 155 ℃; the mixture was extracted three times with ethyl acetate; the extract was over MgSO4Drying, filtering, concentrating and subjecting to column chromatography (silica gel, 100:1 PE/CH)2Cl2To 5:1PE/CH2Cl2Gradient elution of) to give a white solid, intermediate a, in the following table:
TABLE 1
Figure BDA0002783003640000061
Secondly, synthesizing a target product:
Figure BDA0002783003640000062
adding the intermediate A (1mmol) and the carbazole derivative (2mmol) into a three-neck flask respectively, and dissolving with toluene; sequentially adding Pd2(dba)3(0.02mmol), tri-tert-butylphosphine (0.02mmol), sodium tert-butoxide (2.2 mmol); n is a radical of2Bubbling for 10 minutes, reacting the mixed solution of the reactants at the reaction temperature of 95-110 ℃ for 10-24 hours in an inert atmosphere, cooling, and extracting the mixture with ethyl acetate for three times; the extract was over MgSO4Drying, filtering, concentrating and subjecting to column chromatography (silica gel, from pure PE to 10:1 PE/CH)2Cl2Gradient elution of) to obtain the target product.
Detailed description of the preferred embodiment 1
Figure BDA0002783003640000071
Adding the intermediate A into a three-neck flask respectively1(1mmol), carbazole derivative (2mmol), and dissolving with toluene; sequentially adding Pd2(dba)3(0.02mmol), tri-tert-butylphosphine (0.02mmol), sodium tert-butoxide (2.2 mmol); n is a radical of2Bubbling for 10 minutes, reacting the mixed solution of the reactants at the reaction temperature of 95-110 ℃ for 10-24 hours in an inert atmosphere, cooling, and extracting the mixture with ethyl acetate for three times; the extract was over MgSO4Drying, filtering, concentrating and subjecting to column chromatography (silica gel, from pure PE to 10:1 PE/CH)2Cl2Gradient elution of) to obtain the target product.
Further purification using reverse phase column chromatography with acetonitrile as eluent gave a white solid and its structure was confirmed by mass spectrometry, HRMS Calcd for C43H24N2O3:616.18,Found:616.2。C43H24N2O3Theoretical value of elemental analysis: c, 83.75; h, 3.92; n, 4.54. Elemental analysis found: c, 83.68; h, 3.88; and N, 4.46.
Specific example 2
Figure BDA0002783003640000072
Adding the intermediate A into a three-neck flask respectively2(1mmol), carbazole derivative (2mmol), and dissolving with toluene; sequentially adding Pd2(dba)3(0.02mmol), tri-tert-butylphosphine (0.02mmol), sodium tert-butoxide (2.2 mmol); n is a radical of2Bubbling for 10 minutes and reacting the mixed solution of the reactants at the reaction temperature under an inert atmosphereReacting at the temperature of 95-110 ℃ for 10-24 hours, cooling, and extracting the mixture with ethyl acetate for three times; the extract was over MgSO4Drying, filtering, concentrating and subjecting to column chromatography (silica gel, from pure PE to 10:1 PE/CH)2Cl2Gradient elution of) to obtain the target product.
Further purification using reverse phase column chromatography with acetonitrile as eluent gave a white solid and its structure was confirmed by mass spectrometry, HRMS Calcd for C38H24N2O:524.19,Found:524.20。C38H24N2Theoretical value of O element analysis: c, 87.00; h, 4.61; n, 5.34. Elemental analysis found: c, 87.15; h, 4.72; n, 5.33.
Specific example 3
Figure BDA0002783003640000081
Adding the intermediate A into a three-neck flask respectively3(1mmol), carbazole derivative (2mmol), and dissolving with toluene; sequentially adding Pd2(dba)3(0.02mmol), tri-tert-butylphosphine (0.02mmol), sodium tert-butoxide (2.2 mmol); n is a radical of2Bubbling for 10 minutes, reacting the mixed solution of the reactants at the reaction temperature of 95-110 ℃ for 10-24 hours in an inert atmosphere, cooling, and extracting the mixture with ethyl acetate for three times; the extract was over MgSO4Drying, filtering, concentrating and subjecting to column chromatography (silica gel, from pure PE to 10:1 PE/CH)2Cl2Gradient elution of) to obtain the target product.
Further purification using reverse phase column chromatography with acetonitrile as eluent gave a white solid and its structure was confirmed by mass spectrometry, HRMS Calcd for C48H36N2S:672.26,Found:672.32。C48H36N2Theoretical value of S element analysis: c, 85.68; h, 5.39; and N, 4.16. Elemental analysis found: c, 85.66; h, 5.33; n, 4.11.
Detection example 1
The detection embodiment is a pair toolThe products obtained in practical example 1, specific example 2 and specific example 3 were subjected to T1The energy level, thermal property and HOMO energy level are measured, and the detection results are shown in the following table:
TABLE 2
Compound (I) T1(eV) Tg(℃) Td(℃) HOMO energy level (eV)
Detailed description of the preferred embodiment 1 2.78 153 408 -5.85
Specific example 2 2.85 149 419 -5.77
Specific example 3 2.83 155 415 -5.83
Wherein the triplet state energy level T1Is tested by an F4600 fluorescence spectrometer of Hitachi, and the test condition of the material is 2 multiplied by 10- 5A toluene solution of mol/L; the glass transition temperature Tg is determined by differential scanning calorimetry (DSC, DSC204F1 DSC, Germany Chi corporation), the heating rate is 10 ℃/min; the thermogravimetric temperature Td is a temperature at which 1% of the weight loss is observed in a nitrogen atmosphere, and is measured on a TGA-50H thermogravimetric analyzer of Shimadzu corporation, Japan, and the nitrogen flow rate is 20 mL/min; the highest occupied molecular orbital HOMO energy level was tested by the ionization energy testing system (IPS3) in an atmospheric environment.
As can be seen from table 2, the compound of the present invention has a high triplet level, a high thermal stability, and a suitable HOMO level, and is suitable for use as a light emitting layer material.
Application examples
This application embodiment provides an OLED device, and its structure includes in proper order: transparent substrate layer, anode layer, hole injection layer, hole transport layer, light emitting layer, electron transport layer/hole blocking layer, electron injection layer, cathode electrode layer.
The substrate may be a substrate used in a conventional organic light emitting organic electroluminescent device, for example: glass or plastic. The anode material may be a transparent high-conductivity material, such as Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), tin dioxide (SnO)2) Zinc oxide (ZnO), and the like. In the fabrication of the organic electroluminescent device according to the embodiment, a glass substrate and ITO are used as an anode material.
The hole transport region may be a single layer structure formed of a single material, a single layer structure formed of a plurality of different materials, or a multilayer structure formed of a plurality of different materials, for example: the hole transport region may have a single-layer structure formed of different materials, or may have a structure of a hole injection layer/a hole transport layer, or a structure of a hole injection layer/a hole transport layer/a buffer layer, and the hole transport layer may be formed of a triarylamine-based material such as N, N ' -bis (3-tolyl) -N, N ' -diphenyl- [1, 1-biphenyl ] -4,4' -diamine (TPD) or N, N ' -diphenyl-N, N ' -bis (1-naphthyl) - (1,1' -biphenyl) -4,4' -diamine (NPB). Among them, NPB is a commonly used hole transport material, so NPB is selected as the hole transport material in the fabrication of the organic electroluminescent device according to the present application example.
The organic electroluminescent device structure can be a single light-emitting layer or a multi-light-emitting layer structure. In the present embodiment, a single light emitting layer structure is adopted. In this application embodiment, the light-emitting layer of the organic electroluminescent device includes a host material and a dopant material. The host material is composed of the compound; the doped material is GD-01, and the mass doping concentration of the doped material is 3% -30%; among them, the mass doping concentration of the doping material in the light-emitting layer is preferably 5% to 15%. Meanwhile, the compound can also be used as a doping material of a light-emitting layer.
The electron transport region includes one or more of a hole blocking layer, an electron transport layer, and an electron injection layer, for example: the electron transport region may have a structure of an electron transport layer/an electron injection layer, a structure of a hole blocking layer/an electron transport layer/an electron injection layer, but is not limited thereto; the electron transport layer may be Alq3Or TAZ or TPBi or a combination of any two taken from these three materials.
LiF/Al is selected as a cathode material in the preparation of the organic electroluminescent device of the application embodiment.
The specific structural formula of the material is as follows:
Figure BDA0002783003640000101
the specific preparation process of the OLED device comprises the following steps:
cleaning an ITO anode layer on a transparent glass substrate layer, respectively ultrasonically cleaning the ITO anode layer for 15 minutes by using deionized water, acetone and ethanol, and then treating the ITO anode layer for 2 minutes in a plasma cleaner; then HAT-CN is evaporated, the film thickness is 10nm, and the layer is a hole injection layer; then, depositing NPB film with thickness of 50nm as hole transport layer; then, a 40nm light emitting layer was evaporated: wherein, the compound is a main body material, GD-01 is used as a doping material, and the doping mass concentration is 6%; TPBI is evaporated on the light-emitting layer in a vacuum evaporation mode, the thickness of the TPBI is 35nm, and the organic material of the TPBI layer is used as a hole blocking/electron transport layer; vacuum evaporating an electron injection layer LiF on the hole blocking/electron transport layer, wherein the thickness of the electron injection layer LiF is 1nm, and the electron injection layer is the electron injection layer; on top of the electron injection layer, cathode Al (80nm) was vacuum evaporated, which layer was a cathode electrode layer.
Detection example 2
The application effect of the synthesized compound as a host material of a light emitting layer in an OLED device is illustrated by numbers 1-10 and comparative example 1; the application effect of the synthesized compound of the present invention as a doping material of a light emitting layer in an OLED device is illustrated by numbers 11-13 and comparative example 2:
TABLE 3
Figure BDA0002783003640000102
Figure BDA0002783003640000111
Wherein, the device test performance is compared with that of comparative example 1 or comparative example 2, and the current efficiency is 10mA/cm2Measured under the condition; the life test system is an OLED device life tester of MODEL MODEL 58131 of Chroma.
From the above device data, it can be seen that the compounds of the present invention can be applied to the fabrication of OLED light emitting devices. Compared with the known material, the compound of the invention can be used as a host material of a light-emitting layer for manufacturing an OLED light-emitting device, and compared with comparative example 1, the compound has the advantages that the efficiency and the service life are greatly improved compared with the known OLED material, and particularly the driving service life of the device is greatly prolonged. The compound can also be used as a luminescent layer doping material for manufacturing an OLED luminescent device, and compared with comparative example 2, the efficiency and the service life of the compound are greatly improved compared with those of the known OLED material, and particularly the driving service life of the device is greatly prolonged.
While the invention has been described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention.

Claims (4)

1. A compound for use in organic light emission, wherein the compound is selected from the group consisting of:
Figure FDA0003362388850000011
Figure FDA0003362388850000021
Figure FDA0003362388850000031
2. an organic light-emitting material comprising the compound according to claim 1.
3. A light-emitting layer characterized by comprising the organic light-emitting material according to claim 2.
4. An OLED device comprising the light-emitting layer of claim 3.
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CN107721903A (en) * 2017-11-13 2018-02-23 长春海谱润斯科技有限公司 A kind of electroluminescent organic material and its organic luminescent device
CN111253378A (en) * 2018-11-30 2020-06-09 江苏三月光电科技有限公司 Compound taking carbazole-fused ring as core, preparation method and application thereof
CN109988559A (en) * 2019-04-25 2019-07-09 武汉华星光电半导体显示技术有限公司 Thermal activation delayed fluorescence material and organic light-emitting diode (OLED) display apparatus
CN110759918A (en) * 2019-10-31 2020-02-07 上海天马有机发光显示技术有限公司 Compound, display panel and electronic equipment

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