CN112469498B - Vaporizer, liquid material vaporizing apparatus, and vaporizing method - Google Patents
Vaporizer, liquid material vaporizing apparatus, and vaporizing method Download PDFInfo
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- CN112469498B CN112469498B CN201980049167.8A CN201980049167A CN112469498B CN 112469498 B CN112469498 B CN 112469498B CN 201980049167 A CN201980049167 A CN 201980049167A CN 112469498 B CN112469498 B CN 112469498B
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- gas
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J7/00—Apparatus for generating gases
- B01J7/02—Apparatus for generating gases by wet methods
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
Abstract
The invention provides a vaporizer, a liquid material vaporizing device and a vaporizing method. A vaporizer for vaporizing a liquid material or a gas-liquid mixture of a liquid material and a carrier gas, without increasing the risk of nozzle clogging and suppressing the occurrence of localized cold spots, comprising: a nozzle (L4) for guiding a liquid material or a gas-liquid mixture; a heating flow path (L5) for guiding the liquid material or the gas-liquid mixture sprayed in a mist form from the nozzle (L4); and a high-temperature gas supply passage (L6) for supplying a high-temperature gas to the heating flow passage (L5).
Description
Technical Field
The present invention relates to a vaporizer, a liquid material vaporizing apparatus provided with the vaporizer, and a vaporizing method.
Background
Conventionally, as a vaporizer that generates a gas used in a semiconductor manufacturing process such as a film forming process, there is a vaporizer as described in patent document 1: the liquid material is sprayed from the nozzle in a mist form and guided to the heating flow path while being depressurized, so that the liquid material is gasified to generate a gasified gas.
In the above-described structure, by providing a stirring material called a static stirrer or a filler having excellent heat transfer property in the heating flow path, for example, the heat transfer efficiency to the liquid material sprayed in the form of mist can be improved.
However, when the liquid material sprayed in a mist form is gasified by contacting with the static mixer or the filler, the evaporation heat is extracted at the contact portion and the periphery thereof, and the temperature is lowered, thereby generating a local cold spot (cold spot). Then, the vapor pressure of the liquid at the cold point is reduced, and therefore vaporization becomes difficult to occur, resulting in a reduction in vaporization performance.
As a countermeasure for the cold spot, it is conceivable to raise the temperature of the carrier gas that guides the liquid material to the nozzle to a high temperature, but in this case, there is a possibility that the liquid material is thermally decomposed before reaching the nozzle, and residues are generated, and the risk of clogging of the nozzle increases.
Patent document 1: japanese patent application laid-open No. 2012-177193
Disclosure of Invention
The present invention has been made to solve the above-described problems at a time, and an object of the present invention is to suppress occurrence of local cold spots without increasing the risk of nozzle clogging.
That is, the vaporizer of the present invention vaporizes a liquid material or a gas-liquid mixture of a liquid material and a carrier gas, and includes: a nozzle for guiding the liquid material or the gas-liquid mixture; a heating flow path formed in the block body and guiding the liquid material or the gas-liquid mixture sprayed in a mist form by the nozzle; the stirring piece or the filling material is arranged in the heating runner; and a high-temperature gas supply passage penetrating through an inner peripheral surface of the block body, the inner peripheral surface forming the heating flow passage, the high-temperature gas supply passage supplying a high-temperature gas toward a portion of the stirring member or the filler material in contact with the liquid material or the gas-liquid mixture sprayed in a mist form by the nozzle and deprived of vaporization heat by vaporization of the liquid material or the gas-liquid mixture, or supplying a high-temperature gas between the nozzle and the stirring member or the filler material.
In the case of the vaporizer having such a structure, since the high-temperature gas supply passage supplies the high-temperature gas to the heating flow passage, the liquid material is not heated on the upstream side of the nozzle, and the portion where a local cold spot may be generated can be heated on the downstream side of the nozzle. This prevents the risk of clogging of the nozzle, and suppresses occurrence of cold spots.
Preferably, the gasifier further includes a stirring member provided in the heating flow passage, and the high-temperature gas supply passage supplies the high-temperature gas toward a distal end portion of the stirring member.
With such a structure, the heat transfer property in the heating flow path can be improved by the stirring bar, and the end portion of the stirring bar where cold spots are likely to occur can be heated, whereby the occurrence of cold spots can be suppressed.
Preferably, the heating flow path has a tubular shape, and the high-temperature gas supply path is provided in a direction toward a central axis of the heating flow path.
With such a configuration, the occurrence of cold spots can be suppressed more reliably because the center portion of the heating flow path is more likely to become low temperature.
Preferably, the heating flow path has a tubular shape, and the feeding direction of the high-temperature gas feeding path is a tangential direction of the heating flow path.
With such a structure, the high-temperature gas supplied to the heating flow path can be swirled in the heating flow path, and the heating efficiency of the high-temperature gas can be improved.
However, when the temperature of the heating flow path is adjusted to a predetermined set temperature, if the temperature of the high-temperature gas is equal to or higher than the set temperature of the heating flow path, the response speed of the temperature control decreases, and the control becomes unstable.
Therefore, in order to stably control the temperature of the heating flow path, it is preferable that the vaporizer further includes a temperature adjustment mechanism that adjusts the temperature of the heating flow path to a predetermined set temperature, the temperature of the high-temperature gas being lower than the set temperature.
In addition, the liquid material vaporizing device of the present invention includes: the gasifier described above; and a gas-liquid mixing unit configured to mix the liquid material with the carrier gas to generate the gas-liquid mixture.
Further, the gasification method of the present invention gasifies a liquid material or a gas-liquid mixture using a gasifier including: a nozzle for guiding the liquid material or the gas-liquid mixture formed by mixing the liquid material with a carrier gas; a heating flow path formed in the block body and guiding the liquid material or the gas-liquid mixture sprayed in a mist form by the nozzle; and a stirring tool or a filler provided in the heating flow path, wherein a high-temperature gas is supplied from a high-temperature gas supply path penetrating through an inner peripheral surface of the block body forming the heating flow path toward a portion of the stirring tool or the filler that is in contact with the liquid material or the gas-liquid mixture sprayed in a mist form by the nozzle and is deprived of vaporization heat by vaporization of the liquid material or the gas-liquid mixture, or a high-temperature gas is supplied between the nozzle and the stirring tool or the filler.
In the case of such a liquid material vaporizing device and vaporizing method, the same operational effects as those of the above-described vaporizer can be obtained.
According to the present invention thus constituted, the occurrence of local cold spots can be suppressed without increasing the risk of nozzle clogging.
Drawings
Fig. 1 is a diagram schematically showing the overall structure of the liquid material vaporizing device according to the present embodiment.
Fig. 2 is a cross-sectional view schematically showing the structure of the gasifier according to the present embodiment.
Fig. 3 is a perspective view schematically showing the structure of the gasifier according to the present embodiment.
Fig. 4 is a cross-sectional view schematically showing the structure of the gasifier according to the present embodiment.
Fig. 5 is a perspective view schematically showing the structure of a gasifier according to another embodiment.
Fig. 6 is a cross-sectional view schematically showing the structure of a gasifier according to another embodiment.
Fig. 7 is a cross-sectional view schematically showing the structure of a gasifier according to another embodiment.
Detailed Description
An embodiment of the liquid material vaporizing device according to the present invention will be described below with reference to the drawings.
The liquid material vaporizing device 100 according to the present embodiment is used for supplying a predetermined flow rate of gas to a chamber or the like, which is incorporated in, for example, a semiconductor production line or the like, and is used for a semiconductor manufacturing process. As shown in fig. 1, the liquid material vaporizing apparatus 100 includes: a gas-liquid mixing unit 10 for mixing a liquid material with a carrier gas to generate a gas-liquid mixture; and a vaporizer 20 for introducing the gas-liquid mixture and vaporizing the liquid material contained in the gas-liquid mixture.
The gas-liquid mixing section 10 includes: a carrier gas flow path L1 through which a carrier gas flows; a liquid material flow path L2 through which the liquid material flows; a gas-liquid mixing chamber 10s in which a carrier gas flow path L1 and a liquid material flow path L2 are merged; a gas-liquid mixture flow path L3 through which the gas-liquid mixture generated in the gas-liquid mixture chamber 10s flows; and a flow rate regulating valve 11 for regulating the flow rate of the gas-liquid mixture.
In the present embodiment, the carrier gas flow path L1 and the liquid material flow path L2 are formed inside the block 12, and the outlet ports L1a, L2a of the carrier gas flow path L1 and the liquid material flow path L2 are opened in the valve seat surface 13 formed on one surface (upper surface in this case) of the block 12.
The flow rate control valve 11 is, for example, a normally closed piezoelectric valve, and the valve body 111 is disposed so as to face the valve seat surface 13. Thus, the space surrounded by the valve body 111, the valve seat surface 13, and the block 12 forms the gas-liquid mixing chamber 10s described above. Fig. 1 shows a state in which the valve body 111 is seated on the valve seat surface 13, and a state in which fluid does not enter the gas-liquid mixing chamber 10s.
The gas-liquid mixture flow path L3 has an inlet port L3a formed in the valve seat surface 13, and the gas-liquid mixture generated in the gas-liquid mixing chamber 10s is introduced into the gas-liquid mixture flow path L3, and the gas-liquid mixture flow path L3 guides the gas-liquid mixture to the vaporizer 20.
With the above-described structure, the valve body 111 opens or closes the outlet L1a of the carrier gas flow path L1, the outlet L2a of the liquid material flow path L2, and the inlet L3a of the gas-liquid mixture flow path L3, respectively, whereby the gas-liquid mixture can be supplied to the vaporizer 20 or the supply of the gas-liquid mixture to the vaporizer 20 can be stopped.
The gasifier 20 has: a nozzle L4 connected to a piping member Z1 forming a gas-liquid mixture flow path L3, for spraying the gas-liquid mixture guided by the gas-liquid mixture flow path L3 in a mist form; a heating flow path L5 provided downstream of the nozzle L4 for heating the atomized (gasified) liquid material; and a temperature adjustment mechanism 21 for adjusting the temperature of the heating flow path L5.
The nozzle L4 connects the gas-liquid mixture flow path L3 and the heating flow path L5, is a nozzle-shaped member having a smaller diameter and length than the gas-liquid mixture flow path L3 and the heating flow path L5, and is a pressure reducing flow path for reducing the pressure of the gas-liquid mixture.
The heating flow path L5 is a substantially straight tubular member having a larger diameter than the gas-liquid mixture flow path L3, and is formed inside the block 22, and the end of the heating flow path L5 on the nozzle L4 side is tapered. In the heating flow path L5, a stirrer 3 such as a static mixer for mixing the carrier gas with the atomized liquid material is provided, and the carrier gas and the liquid material are heated while being mixed, whereby vaporization performance can be improved.
The temperature adjustment mechanism 21 includes: one or more heaters H for heating the heating flow path L5; a temperature sensor T for detecting the temperature of the heating flow path L5; and a control device, not shown, for controlling the temperature of the heater H. The temperature adjustment mechanism 21 is configured to: the heater H is PID-controlled by the control device based on the detected temperature of the temperature sensor T, for example, to heat the heating flow path L5 to a predetermined set temperature (for example, about 300 ℃).
As shown in fig. 2, the liquid material vaporizing device 100 of the present embodiment further includes a high-temperature gas supply path L6, and the high-temperature gas supply path L6 supplies a high-temperature gas to the heating flow path L5.
Preferably, the high-temperature gas supply passage L6 is configured to supply the high-temperature gas to the upstream end portion of the heating flow passage L5.
The "upstream end of the heating flow path L5" referred to herein is a region where heat of the supplied high-temperature gas is transferred to the distal end portion 31 of the stirring bar 3, and more preferably a region where heat of the supplied high-temperature gas is transferred to the distal end surface 32 of the stirring bar 3. More specifically, the upstream end of the heating flow path L5 is a range on the upstream side of half of the heating flow path L5, and more preferably a range of one third of the upstream side as a whole.
More specifically, the distal end portion 31 and the distal end surface 32 of the stirring bar 3 are portions which are contacted by the liquid material sprayed in the mist form by the nozzle L4 and which are deprived of vaporization heat by vaporization of the liquid material, and the high-temperature gas supply passage L6 is configured to supply the high-temperature gas toward the distal end surface 32 of the stirring bar 3.
As shown in fig. 3 and 4, the high-temperature gas supply passage L6 is formed in the block 22 in the same manner as the heating flow passage L5. Specifically, for example, a high-temperature gas supply passage L6 is formed by cutting the side peripheral surface 221 of the block 22 with a drill or the like, and the high-temperature gas supply passage L6 is formed by a main passage L6a extending from the side peripheral surface 221 of the block 22 toward the heating passage L5 and a small passage L6b formed between the main passage L6a and the heating passage L5. Here, the main flow path L6a and the small flow path L6b are circular, and the diameter of the small flow path L6b is smaller than the diameter of the main flow path L6 a.
The axis L6c of the high-temperature gas supply passage L6, which is the supply direction of the high-temperature gas supply passage L6, is set to be oriented toward the central axis L5c of the heating flow passage L5 and orthogonal to the central axis L5c of the heating flow passage L5. The axis L6c of the high-temperature gas supply passage L6 is not necessarily orthogonal to the central axis L5c of the heating flow passage L5, and may be inclined with respect to the central axis L5c of the heating flow passage L5.
A heater, not shown, is provided in the high-temperature gas supply passage L6, and in the present embodiment, a high-temperature carrier gas formed by heating the carrier gas is supplied. The carrier gas may be an inert gas such as nitrogen, argon, or helium that does not react with the liquid material. The temperature of the high-temperature carrier gas is set to a temperature at which the cold spot generated by vaporization of the liquid material sprayed in the form of mist from the nozzle L4 in the heating flow path L5 can be suppressed, and is higher than the temperature of the distal end surface 32 of the stirring bar 3 and lower than the set temperature of the heating flow path L5. Specifically, for example, the temperature is 100 ℃ to 300 ℃, more preferably 150 ℃ to 180 ℃.
According to the liquid material vaporizing device 100 of the present embodiment configured as described above, since the high-temperature gas is supplied from the high-temperature gas supply passage L6 to the upstream end portion of the heating flow path L5, the distal end portion 31 of the stirring bar 3, which may generate a local cold spot, can be heated downstream of the nozzle L4 without heating the liquid material upstream of the nozzle L4. This can suppress occurrence of cold spots without increasing the risk of clogging of the nozzle L4.
Further, since the high-temperature gas supply passage L6 is provided in the direction toward the central axis L5c of the heating flow passage L5, the high-temperature gas can be supplied to the central portion of the heating flow passage L5 which is more likely to be at a low temperature, and occurrence of the cold spot can be more reliably suppressed.
Further, since the temperature of the high-temperature gas is made lower than the set temperature of the heating flow path L5, it is difficult to reduce the response speed of the temperature control of the temperature adjustment mechanism 21, and the like, and the temperature control of the heating flow path L5 can be performed stably.
Further, the high-temperature gas supply passage L6 is formed by the main passage L6a and the small passage L6b formed between the main passage L6a and the heating passage L5, so that the fluid flowing through the heating passage L5 can be prevented from flowing backward to the high-temperature gas supply passage L6.
The present invention is not limited to the embodiments described above.
For example, the high-temperature gas supply passage L6 is configured to supply a high-temperature carrier gas formed by heating a carrier gas in the above embodiment, but may supply a high-temperature gas formed by heating a gas different from the carrier gas.
The direction of the high-temperature gas supply passage L6 is not necessarily set to be directed toward the central axis L5c of the heating flow passage L5, and may be set in the tangential direction L of the inner peripheral surface 222 of the block 22 forming the heating flow passage L5, as shown in fig. 5 and 6, for example.
With such a structure, the high-temperature gas supplied to the heating flow path L5 can be swirled in the heating flow path L5, and the heating efficiency of the high-temperature gas can be improved.
As shown in fig. 7 (a), the high-temperature gas supply passage L6 may be provided to supply the high-temperature gas upstream of the stirring bar 3 in the heating flow passage L5. With such a structure, the liquid material sprayed in the form of mist from the nozzle L4 can be suppressed from being vaporized to generate a cold spot before reaching the stirring bar 3.
As shown in fig. 7 (b), the high-temperature gas supply passage L6 may be provided to supply the high-temperature gas downstream of the distal end surface 32 of the stirring bar 3 in the heating flow passage L5.
Although not shown, a plurality of high-temperature gas supply passages L6 may be provided.
In addition, the heating flow path L5 may be provided with a filler having excellent heat transfer properties instead of the stirring tool 3 such as a static mixer, or the stirring tool 3 and the filler may not be provided.
The flow rate control valve 11 is a normally closed flow rate control valve in the above embodiment, but may be a normally open flow rate control valve, or may be various valves such as an electromagnetic switch valve.
The liquid material vaporizing device may be configured to guide the liquid material to the vaporizer 20 as it is without using a carrier gas.
The present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the spirit and scope of the present invention.
Description of the reference numerals
100. Liquid material vaporizing device
10. Gas-liquid mixing part
20. Gasifier
3. Stirring piece
L4 nozzle
L5 heating runner
L6 high-temperature gas supply channel
Industrial applicability
According to the invention, the risk of nozzle blockage is not increased, and local cold spots can be restrained
Which occurs.
Claims (7)
1. A vaporizer for vaporizing a liquid material or a gas-liquid mixture of a liquid material and a carrier gas, the vaporizer comprising:
a nozzle for guiding the liquid material or the gas-liquid mixture;
a heating flow path formed in the block body and guiding the liquid material or the gas-liquid mixture sprayed in a mist form by the nozzle;
the stirring piece or the filling material is arranged in the heating runner; and
a high-temperature gas supply passage penetrating an inner peripheral surface of the block body forming the heating flow passage,
the high-temperature gas supply passage supplies a high-temperature gas toward a portion of the stirring body or the filler material that is in contact with the liquid material or the gas-liquid mixture sprayed in a mist form by the nozzle and is deprived of vaporization heat by vaporization of the liquid material or the gas-liquid mixture, or supplies a high-temperature gas toward a space between the nozzle and the stirring body or the filler material.
2. A gasifier according to claim 1 wherein,
the high-temperature gas supply passage supplies the high-temperature gas toward a distal end portion of the stirring member.
3. A gasifier according to claim 1 wherein,
the heating runner is in a tubular shape,
the high-temperature gas supply passage is provided in a direction toward a central axis of the heating flow passage.
4. A gasifier according to claim 1 wherein,
the heating runner is in a tubular shape,
the supply direction of the high-temperature gas supply passage is a tangential direction of the heating flow passage.
5. A gasifier according to claim 1 wherein,
the gasifier further includes a temperature adjusting mechanism that adjusts the temperature of the heating flow passage to a predetermined set temperature,
the temperature of the high temperature gas is lower than the set temperature.
6. A liquid material vaporizing device, comprising:
the gasifier of claim 1; and
and a gas-liquid mixing unit configured to mix the liquid material with the carrier gas to generate the gas-liquid mixture.
7. A gasification method for gasifying a liquid material or a gas-liquid mixture by using a gasifier,
the gasifier includes:
a nozzle for guiding the liquid material or the gas-liquid mixture formed by mixing the liquid material with a carrier gas;
a heating flow path formed in the block body and guiding the liquid material or the gas-liquid mixture sprayed in a mist form by the nozzle; and
a stirring piece or a filling material is arranged in the heating runner,
the gasification process is characterized in that,
and a high-temperature gas supply passage penetrating through the block and forming the inner peripheral surface of the heating flow passage, wherein the high-temperature gas is supplied to a portion of the stirring element or the filler material that is in contact with the liquid material or the gas-liquid mixture sprayed from the nozzle in a mist form and is deprived of vaporization heat by vaporization of the liquid material or the gas-liquid mixture, or the high-temperature gas is supplied to a space between the nozzle and the stirring element or the filler material.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018-156985 | 2018-08-24 | ||
| JP2018156985 | 2018-08-24 | ||
| PCT/JP2019/030370 WO2020039886A1 (en) | 2018-08-24 | 2019-08-01 | Vaporizer, liquid material vaporization device, and vaporization method |
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| Publication Number | Publication Date |
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| CN112469498A CN112469498A (en) | 2021-03-09 |
| CN112469498B true CN112469498B (en) | 2023-04-25 |
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| JP (1) | JP7402801B2 (en) |
| CN (1) | CN112469498B (en) |
| WO (1) | WO2020039886A1 (en) |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4924936A (en) * | 1987-08-05 | 1990-05-15 | M&T Chemicals Inc. | Multiple, parallel packed column vaporizer |
| US5653813A (en) * | 1995-04-03 | 1997-08-05 | Novellus Systems, Inc. | Cyclone evaporator |
| JP4018841B2 (en) * | 1999-04-30 | 2007-12-05 | 日本パイオニクス株式会社 | Vaporizer and vaporization supply method |
| JP2001239151A (en) | 2000-03-01 | 2001-09-04 | Toho Gas Co Ltd | Gasification apparatus |
| KR100881681B1 (en) * | 2001-01-18 | 2009-02-06 | 가부시키가이샤 와타나베 쇼코 | Carburetor, various types of devices using the carburetor, and method of vaporization |
| JP4511414B2 (en) * | 2005-05-19 | 2010-07-28 | 株式会社リンテック | Vaporizer |
| CN102912319B (en) * | 2006-04-05 | 2014-12-10 | 株式会社堀场Stec | Liquid material vaporizer |
| KR20140094657A (en) * | 2006-10-05 | 2014-07-30 | 가부시키가이샤 호리바 에스텍 | Liquid material vaporizer |
| JP5004890B2 (en) * | 2008-07-24 | 2012-08-22 | 株式会社日立国際電気 | Vaporizer, substrate processing apparatus, and method for manufacturing semiconductor device |
| JP2010087169A (en) * | 2008-09-30 | 2010-04-15 | Tokyo Electron Ltd | Carburetor and film-forming system using the same |
| JP2010219421A (en) * | 2009-03-18 | 2010-09-30 | Hitachi Kokusai Electric Inc | Vaporizer, substrate treatment device, and method of manufacturing semiconductor device |
| JP2011082196A (en) * | 2009-10-02 | 2011-04-21 | Hitachi Kokusai Electric Inc | Vaporizer, substrate processing apparatus, and method of manufacturing semiconductor device |
| JP2012204791A (en) * | 2011-03-28 | 2012-10-22 | Tokyo Electron Ltd | Evaporating device, gas supply device, and film deposition device using gas supply device |
| KR101388225B1 (en) * | 2011-12-02 | 2014-04-23 | 주식회사 케이씨텍 | Depositing apparatus of the vaporizer |
| JP6675865B2 (en) * | 2015-12-11 | 2020-04-08 | 株式会社堀場エステック | Liquid material vaporizer |
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2019
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- 2019-08-01 JP JP2020538272A patent/JP7402801B2/en active Active
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| JP7402801B2 (en) | 2023-12-21 |
| WO2020039886A1 (en) | 2020-02-27 |
| JPWO2020039886A1 (en) | 2021-09-24 |
| CN112469498A (en) | 2021-03-09 |
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