CN112469190A - Atomic beam pre-reduction device and method special for ground state sodium cesium molecule preparation - Google Patents
Atomic beam pre-reduction device and method special for ground state sodium cesium molecule preparation Download PDFInfo
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Abstract
The invention relates to an atomic beam pre-reduction technology, in particular to an atomic beam pre-reduction device and method special for ground state sodium cesium molecule preparation. The invention solves the problem that the prior atomic beam pre-reduction device hinders the normal operation of other optical experiments, so that the failure rate of a preparation system is high. An atomic beam pre-reduction device special for ground state sodium cesium molecule preparation comprises a first vacuum tube, a corrugated tube and a second vacuum tube; the first vacuum tube is made of nonmagnetic stainless steel, and has an outer diameter of 2.5cm and a length of 70 cm; the inner diameter of the corrugated pipe is 2cm, and the length of the corrugated pipe is 7.5 cm; the second vacuum tube is made of nonmagnetic stainless steel, and has an outer diameter of 2.5cm and a length of 25 cm; a first solenoid group is sleeved on the outer side surface of the first vacuum tube; the outer side surface of the second vacuum tube is respectively sleeved with a second solenoid group and a third solenoid group, and the third solenoid group is positioned on the right side of the second solenoid group. The method is suitable for preparing the ground state sodium cesium molecules.
Description
Technical Field
The invention relates to an atomic beam pre-reduction technology, in particular to an atomic beam pre-reduction device and method special for ground state sodium cesium molecule preparation.
Background
In order to load sodium atoms and cesium atoms into a magneto-optical trap (MOT) to achieve quantum degeneracy in the production of ground state sodium cesium molecules, it is necessary to pre-decelerate a sodium atom beam and a cesium atom beam with an atom beam pre-deceleration device. Under the condition of the prior art, the atomic beam pre-reduction device consists of two Zeeman reducers, wherein one Zeeman reducer is used for pre-reducing the sodium atomic beam, and the other Zeeman reducer is used for pre-reducing the cesium atomic beam. However, in practical application, the existing atomic beam pre-reduction device has the following problems due to the limitation of the structure thereof: first, two zeeman retarders occupy a significant amount of the optical window of the vacuum chamber to which they are connected, thereby preventing other optical experiments from proceeding properly. Secondly, the two zeeman reducers may cause the structure of the preparation system to be complicated, thereby causing a high failure rate of the preparation system. Therefore, an atomic beam pre-reduction device and an atomic beam pre-reduction method special for ground state sodium cesium molecule preparation are needed to be invented, so that the problems that the conventional atomic beam pre-reduction device obstructs normal operation of other optical experiments and causes high failure rate of a preparation system are solved.
Disclosure of Invention
The invention provides an atomic beam pre-reduction device and method special for ground state sodium cesium molecule preparation, and aims to solve the problem that the failure rate of a preparation system is high due to the fact that the conventional atomic beam pre-reduction device hinders normal operation of other optical experiments.
The invention is realized by adopting the following technical scheme:
an atomic beam pre-reduction device special for ground state sodium cesium molecule preparation comprises a first vacuum tube, a corrugated tube and a second vacuum tube;
the first vacuum tube is made of nonmagnetic stainless steel, and has an outer diameter of 2.5cm and a length of 70 cm; the inner diameter of the corrugated pipe is 2cm, and the length of the corrugated pipe is 7.5 cm; the second vacuum tube is made of nonmagnetic stainless steel, and has an outer diameter of 2.5cm and a length of 25 cm;
the left end of the first vacuum tube is fixedly connected with a first flange interface; the right end of the first vacuum tube is fixedly connected with a second flange interface; the left end of the corrugated pipe is fixedly connected with a third flange interface, and the third flange interface is coaxially butted with the second flange interface; the right end of the corrugated pipe is fixedly connected with a fourth flange connector; the left end of the second vacuum tube is fixedly connected with a fifth flange interface, and the fifth flange interface is coaxially butted with the fourth flange interface; the right end of the second vacuum tube is fixedly connected with a sixth flange interface;
a first solenoid group is sleeved on the outer side surface of the first vacuum tube;
the first solenoid group comprises twelve layers of solenoids A which are sequentially stacked from inside to outside; the left end surfaces of the twelve layers of solenoids A are all flush; the number of turns of the first layer of solenoids A is 188 turns; the number of turns of the second layer solenoid A is 178 turns; the number of turns of the third layer solenoid A is 168; the number of turns of the fourth layer solenoid A is 156 turns; the number of turns of the fifth layer solenoid A is 139 turns; the number of turns of the sixth layer solenoid A is 126; the number of turns of the seventh layer solenoid A is 110; the number of turns of the eighth layer solenoid A is 90 turns; the number of turns of the ninth layer of the solenoid A is 70; the number of turns of the tenth layer solenoid A is 50; the number of turns of the eleventh layer solenoid A is 32; the number of turns of the twelfth layer of solenoid A is 17;
a second solenoid group and a third solenoid group are respectively sleeved on the outer side surface of the second vacuum tube, and the third solenoid group is positioned on the right side of the second solenoid group;
the second solenoid group comprises five layers of solenoids B which are sequentially stacked from inside to outside; the right end faces of the five layers of solenoids B are all flush; the number of turns of the first layer solenoid B is 33; the number of turns of the second layer solenoid B is 24; the number of turns of the third layer solenoid B is 15; the number of turns of the fourth layer solenoid B is 10; the number of turns of the fifth layer solenoid B is 7 turns;
the third solenoid group comprises five layers of solenoids C which are sequentially stacked from inside to outside; the left end faces of the five layers of solenoids C are all flush; the number of turns of the first layer of solenoid C, the number of turns of the second layer of solenoid C, the number of turns of the third layer of solenoid C and the number of turns of the fourth layer of solenoid C are all 6 turns; the number of turns of the fifth layer solenoid C is 4;
the winding direction of the twelve-layer solenoid A, the winding direction of the five-layer solenoid B and the winding direction of the five-layer solenoid C are consistent;
the lead wires of the twelve-layer solenoid A, the lead wires of the five-layer solenoid B and the lead wires of the five-layer solenoid C are all square hollow copper lead wires with the width of 0.3175cm and the inner diameter of 0.155 cm.
The control circuit also comprises a first control circuit, a second control circuit and a third control circuit;
the first control circuit comprises a first direct-current power supply, a first field effect transistor, a first Hall current sensor, a first PID controller and a first PC;
one end of a serial branch formed by connecting twelve layers of solenoids A in series end to end is connected with the positive output end of a first direct-current power supply, and the other end of the serial branch is connected with the drain electrode of a first field-effect tube; the source electrode of the first field effect transistor is connected with the negative output end of the first direct current power supply; the first Hall current sensor is arranged between the source electrode of the first field effect transistor and the negative output end of the first direct current power supply; the first input end of the first PID controller is connected with the output end of the first PC; the second input end of the first PID controller is connected with the output end of the first Hall current sensor; the output end of the first PID controller is connected with the grid electrode of the first field effect tube;
the second control circuit comprises a second direct-current power supply, a second field effect transistor, a second Hall current sensor, a second PID controller and a second PC;
one end of a series branch formed by connecting five layers of solenoids B, a first layer of solenoid C, a second layer of solenoid C and a third layer of solenoid C in series end to end is connected with the positive output end of a second direct-current power supply, and the other end of the series branch is connected with the drain electrode of a second field effect transistor; the source electrode of the second field effect transistor is connected with the negative output end of the second direct current power supply; the second Hall current sensor is arranged between the source electrode of the second field effect transistor and the negative output end of the second direct current power supply; the first input end of the second PID controller is connected with the output end of the second PC; the second input end of the second PID controller is connected with the output end of the second Hall current sensor; the output end of the second PID controller is connected with the grid electrode of the second field effect transistor;
the third control circuit comprises a third direct-current power supply, a third field effect transistor, a third Hall current sensor, a third PID controller and a third PC;
one end of a serial branch formed by connecting a fourth layer solenoid C and a fifth layer solenoid C in series end to end is connected with the positive output end of a third direct current power supply, and the other end of the serial branch is connected with the drain electrode of a third field effect transistor; the source electrode of the third field effect transistor is connected with the negative output end of the third direct current power supply; the third Hall current sensor is arranged between the source electrode of the third field effect transistor and the negative output end of the third direct current power supply; the first input end of the third PID controller is connected with the output end of the third PC; the second input end of the third PID controller is connected with the output end of the third Hall current sensor; and the output end of the third PID controller is connected with the grid electrode of the third field effect transistor.
The first flange interface, the second flange interface, the third flange interface, the fourth flange interface, the fifth flange interface and the sixth flange interface are CF34 flange interfaces.
An atomic beam pre-deceleration method special for ground state sodium cesium molecule preparation (the method is realized based on an atomic beam pre-deceleration device special for ground state sodium cesium molecule preparation provided by the invention), and the method is realized by adopting the following steps:
the method comprises the following steps: pre-decelerating the sodium atom beam:
connecting the first flange interface with a sodium atom source; connecting the sixth flange interface with the vacuum cavity; the currents in the twelve-layer solenoids a are all set to + 19A; setting the current in the five-layer solenoid B, the first-layer solenoid C, the second-layer solenoid C and the third-layer solenoid C to be-15A; setting the current in the fourth layer solenoid C and the fifth layer solenoid C to + 73A; then, heating the sodium atom source to 260 ℃, and allowing a sodium atom beam from the sodium atom source to enter a first vacuum tube at the speed of 900 m/s; under the action of a magnetic field generated by the twelve layers of solenoids A, the five layers of solenoids B and the five layers of solenoids C, the sodium atom beam sequentially passes through the first vacuum tube, the corrugated tube and the second vacuum tube to be decelerated, rotated, overturned and decelerated, then enters the vacuum cavity, and is loaded into the magneto-optical trap;
step two: pre-decelerating the cesium atomic beam:
disconnecting the first flange interface from the sodium atom source, and connecting the first flange interface with the cesium atom source; the currents in the twelve-layer solenoids a are all set to + 2.5A; setting the current in the five-layer solenoid B, the first-layer solenoid C, the second-layer solenoid C and the third-layer solenoid C to be-3A; setting the current in the fourth layer solenoid C and the fifth layer solenoid C to + 6A; then, heating the cesium atom source to 65 ℃, and allowing a cesium atom beam from the cesium atom source to enter a first vacuum tube at a speed of 216 m/s; under the action of a magnetic field generated by the twelve-layer solenoid A, the five-layer solenoid B and the five-layer solenoid C, the cesium atom beam sequentially passes through the first vacuum tube, the corrugated tube and the second vacuum tube to be decelerated, rotated, overturned and decelerated, enters the vacuum cavity, and is loaded into the magneto-optical trap.
The current in the twelve-layer solenoid a is set using the following steps:
the first PC sends the set value to the first PID controller; the first Hall current sensor measures the source electrode current of the first field effect tube in real time and sends the measured value to the first PID controller in real time; the first PID controller compares the set value with the measured value and adjusts the resistance value of the first field effect transistor according to the comparison result so that the measured value coincides with the set value, thereby causing the current in the twelve-layer solenoid a to reach the set value.
The currents in the five-layer solenoid B, the first-layer solenoid C, the second-layer solenoid C, and the third-layer solenoid C are set by the following steps:
the second PC sends the set value to a second PID controller; the second Hall current sensor measures the source electrode current of the second field effect tube in real time and sends the measured value to the second PID controller in real time; the second PID controller compares the set value with the measured value and adjusts the resistance value of the second field effect transistor according to the comparison result so that the measured value coincides with the set value, thereby causing the currents in the five-layer solenoid B, the first-layer solenoid C, the second-layer solenoid C, and the third-layer solenoid C to reach the set value.
The current in the fourth layer solenoid C and the fifth layer solenoid C is set by the following steps:
the third PC sends the set value to a third PID controller; the third Hall current sensor measures the source electrode current of the third field effect tube in real time and sends the measured value to the third PID controller in real time; the third PID controller compares the set value with the measured value and adjusts the resistance value of the third field effect transistor according to the comparison result so that the measured value coincides with the set value, thereby causing the currents in the fourth layer solenoid C and the fifth layer solenoid C to reach the set value.
Compared with the existing atomic beam pre-reduction device, the atomic beam pre-reduction device and the atomic beam pre-reduction method special for ground state sodium cesium molecule preparation do not adopt two Zeeman reducers to pre-reduce the sodium atomic beam and the cesium atomic beam, but realize the pre-reduction of the sodium atomic beam and the cesium atomic beam in the same device based on a completely new structure and principle, thereby having the following advantages: firstly, the invention only needs to occupy a small amount of optical windows of the vacuum cavity connected with the optical windows, thereby effectively ensuring the normal operation of other optical experiments. Secondly, the invention effectively simplifies the structure of the preparation system, thereby effectively reducing the failure rate of the preparation system.
The atomic beam pre-reduction device is reasonable in structure and ingenious in design, effectively solves the problem that the failure rate of a preparation system is high due to the fact that the conventional atomic beam pre-reduction device obstructs normal operation of other optical experiments, and is suitable for ground state sodium cesium molecule preparation.
Drawings
Fig. 1 is a schematic structural view of the present invention.
Fig. 2 is a schematic structural diagram of a first control circuit in the present invention.
Fig. 3 is a schematic diagram of a second control circuit according to the present invention.
Fig. 4 is a schematic diagram of a third control circuit according to the present invention.
In the figure: 1-a first vacuum tube, 2-a bellows, 3-a second vacuum tube, 4-a first flange interface, 5-a second flange interface, 6-a third flange interface, 7-a fourth flange interface, 8-a fifth flange interface, 9-a sixth flange interface, 10-a solenoid A, 11-a solenoid B, 12-a solenoid C, 13-a first DC power supply, 14-a first field effect transistor, 15-a first Hall current sensor, 16-a first PID controller, 17-a first PC, 18-a second DC power supply, 19-a second field effect transistor, 20-a second Hall current sensor, 21-a second PID controller, 22-a second PC, 23-a third DC power supply, 24-a third field effect transistor, 25-a third Hall current sensor, 26-third PID controller, 27-third PC.
Detailed Description
An atomic beam pre-reduction device special for ground state sodium cesium molecule preparation comprises a first vacuum tube 1, a corrugated tube 2 and a second vacuum tube 3;
wherein, the first vacuum tube 1 is made of non-magnetic stainless steel, the outer diameter of the first vacuum tube is 2.5cm, and the length of the first vacuum tube is 70 cm; the inner diameter of the corrugated pipe 2 is 2cm, and the length is 7.5 cm; the second vacuum tube 3 is made of nonmagnetic stainless steel, and has the outer diameter of 2.5cm and the length of 25 cm;
the left end of the first vacuum tube 1 is fixedly connected with a first flange interface 4; the right end of the first vacuum tube 1 is fixedly connected with a second flange interface 5; the left end of the corrugated pipe 2 is fixedly connected with a third flange interface 6, and the third flange interface 6 is coaxially butted with the second flange interface 5; the right end of the corrugated pipe 2 is fixedly connected with a fourth flange connector 7; the left end of the second vacuum tube 3 is fixedly connected with a fifth flange interface 8, and the fifth flange interface 8 is coaxially butted with a fourth flange interface 7; the right end of the second vacuum tube 3 is fixedly connected with a sixth flange interface 9;
a first solenoid group is sleeved on the outer side surface of the first vacuum tube 1;
the first solenoid group comprises twelve layers of solenoids A10 which are sequentially stacked from inside to outside; the left end faces of the twelve layers of solenoids A10 are all flush; the number of turns of the first layer solenoid a10 is 188 turns; the number of turns of the second layer solenoid a10 is 178 turns; the third layer of solenoid a10 has 168 turns; the number of turns of the fourth layer solenoid a10 is 156 turns; the number of turns of the fifth layer solenoid a10 is 139 turns; the number of turns of the sixth layer solenoid a10 is 126; the number of turns of the seventh layer solenoid a10 is 110 turns; the number of turns of the eighth layer solenoid a10 is 90 turns; the number of turns of the ninth layer solenoid a10 is 70; the number of turns of the tenth layer solenoid a10 is 50; the number of turns of the eleventh layer solenoid a10 is 32; the number of turns of the twelfth layer solenoid a10 is 17 turns;
a second solenoid group and a third solenoid group are respectively sleeved on the outer side surface of the second vacuum tube 3, and the third solenoid group is positioned on the right side of the second solenoid group;
the second solenoid group comprises five layers of solenoids B11 which are sequentially stacked from inside to outside; the right end faces of the five layers of solenoids B11 are all flush; the number of turns of the first layer solenoid B11 is 33 turns; the number of turns of the second layer solenoid B11 is 24 turns; the third layer solenoid B11 has 15 turns; the number of turns of the fourth layer solenoid B11 is 10 turns; the number of turns of the fifth layer solenoid B11 is 7 turns;
the third solenoid group comprises five layers of solenoids C12 which are sequentially stacked from inside to outside; the left end faces of the five layers of solenoids C12 are all flush; the number of turns of the first layer solenoid C12, the number of turns of the second layer solenoid C12, the number of turns of the third layer solenoid C12, and the number of turns of the fourth layer solenoid C12 are all 6 turns; the number of turns of the fifth layer solenoid C12 is 4 turns;
the winding direction of the twelve-layer solenoid A10, the winding direction of the five-layer solenoid B11 and the winding direction of the five-layer solenoid C12 are consistent;
the lead wires of the twelve-layer solenoid A10, the lead wires of the five-layer solenoid B11 and the lead wires of the five-layer solenoid C12 are all square hollow copper lead wires with the width of 0.3175cm and the inner diameter of 0.155 cm.
The control circuit also comprises a first control circuit, a second control circuit and a third control circuit;
the first control circuit comprises a first direct current power supply 13, a first field effect transistor 14, a first Hall current sensor 15, a first PID controller 16 and a first PC 17;
one end of a serial branch formed by connecting twelve layers of solenoids A10 end to end in series is connected with the positive output end of the first direct current power supply 13, and the other end of the serial branch is connected with the drain electrode of the first field effect transistor 14; the source electrode of the first field effect transistor 14 is connected with the negative output end of the first direct current power supply 13; the first hall current sensor 15 is installed between the source electrode of the first field effect transistor 14 and the negative output end of the first direct current power supply 13; a first input end of the first PID controller 16 is connected with an output end of the first PC 17; a second input end of the first PID controller 16 is connected with an output end of the first hall current sensor 15; the output end of the first PID controller 16 is connected with the grid electrode of the first field effect transistor 14;
the second control circuit comprises a second direct-current power supply 18, a second field effect transistor 19, a second Hall current sensor 20, a second PID controller 21 and a second PC 22;
one end of a series branch formed by connecting five layers of solenoids B11, a first layer of solenoid C12, a second layer of solenoid C12 and a third layer of solenoid C12 in series end to end is connected with the positive output end of the second direct current power supply 18, and the other end of the series branch is connected with the drain electrode of the second field effect transistor 19; the source electrode of the second field effect transistor 19 is connected with the negative output end of the second direct current power supply 18; the second hall current sensor 20 is installed between the source electrode of the second field effect transistor 19 and the negative output end of the second direct current power supply 18; a first input end of the second PID controller 21 is connected with an output end of the second PC 22; a second input end of the second PID controller 21 is connected with an output end of the second hall current sensor 20; the output end of the second PID controller 21 is connected with the grid electrode of the second field effect transistor 19;
the third control circuit comprises a third direct current power supply 23, a third field effect transistor 24, a third Hall current sensor 25, a third PID controller 26 and a third PC 27;
one end of a serial branch formed by connecting a fourth layer solenoid C12 and a fifth layer solenoid C12 in series end to end is connected with the positive output end of the third direct current power supply 23, and the other end of the serial branch is connected with the drain electrode of the third field effect transistor 24; the source electrode of the third field effect transistor 24 is connected with the negative output end of the third direct current power supply 23; the third hall current sensor 25 is installed between the source of the third field effect transistor 24 and the negative output terminal of the third direct current power supply 23; a first input terminal of the third PID controller 26 is connected to an output terminal of the third PC 27; a second input end of the third PID controller 26 is connected with an output end of the third hall current sensor 25; an output of the third PID controller 26 is connected to the gate of the third fet 24.
The first flange interface 4, the second flange interface 5, the third flange interface 6, the fourth flange interface 7, the fifth flange interface 8 and the sixth flange interface 9 all adopt CF34 flange interfaces.
An atomic beam pre-deceleration method special for ground state sodium cesium molecule preparation (the method is realized based on an atomic beam pre-deceleration device special for ground state sodium cesium molecule preparation provided by the invention), and the method is realized by adopting the following steps:
the method comprises the following steps: pre-decelerating the sodium atom beam:
connecting the first flange interface 4 with a sodium atom source; connecting the sixth flange interface 9 with the vacuum cavity; the currents in the twelve-layer solenoids a10 are all set to + 19A; the currents in the five-layer solenoid B11, the first-layer solenoid C12, the second-layer solenoid C12, and the third-layer solenoid C12 are all set to-15A; the currents in the fourth layer solenoid C12 and the fifth layer solenoid C12 are set to + 73A; then, heating the sodium atom source to 260 ℃, and allowing a sodium atom beam from the sodium atom source to enter the first vacuum tube 1 at the speed of 900 m/s; under the action of a magnetic field generated by the twelve-layer solenoid A10, the five-layer solenoid B11 and the five-layer solenoid C12, the sodium atom beam sequentially passes through the first vacuum tube 1, the corrugated tube 2 and the second vacuum tube 3 to be decelerated, rotated, overturned and decelerated, enters a vacuum cavity and is loaded into a magneto-optical trap;
step two: pre-decelerating the cesium atomic beam:
disconnecting the first flange interface 4 from the sodium atom source, and connecting the first flange interface 4 with the cesium atom source; the currents in the twelve-layer solenoids a10 are all set to + 2.5A; the currents in the five-layer solenoid B11, the first-layer solenoid C12, the second-layer solenoid C12, and the third-layer solenoid C12 are all set to-3A; the currents in the fourth layer solenoid C12 and the fifth layer solenoid C12 are set to + 6A; then, the cesium atom source was heated to 65 ℃, and a cesium atom beam from the cesium atom source entered the first vacuum tube 1 at a speed of 216 m/s; under the action of a magnetic field generated by the twelve-layer solenoid A10, the five-layer solenoid B11 and the five-layer solenoid C12, the cesium atom beam sequentially passes through the first vacuum tube 1, the corrugated tube 2 and the second vacuum tube 3 to be decelerated, rotated, overturned and decelerated, enters a vacuum cavity and is loaded into a magneto-optical trap.
The current in the twelve-layer solenoid a10 was set using the following steps:
the first PC 17 sends the set value to the first PID controller 16; the first hall current sensor 15 measures the source current of the first field effect transistor 14 in real time and sends the measured value to the first PID controller 16 in real time; the first PID controller 16 compares the set value and the measured value, and adjusts the resistance value of the first field effect transistor 14 according to the comparison result so that the measured value coincides with the set value, thereby causing the current in the twelve-layer solenoid a10 to reach the set value.
The currents in the five-layer solenoid B11, the first-layer solenoid C12, the second-layer solenoid C12, and the third-layer solenoid C12 are set by the following steps:
the second PC 22 sends the set value to the second PID controller 21; the second hall current sensor 20 measures the source current of the second field effect transistor 19 in real time and sends the measured value to the second PID controller 21 in real time; the second PID controller 21 compares the set value and the measured value, and adjusts the resistance value of the second field effect transistor 19 in accordance with the comparison result so that the measured value coincides with the set value, thereby causing the currents in the five-layer solenoid B11, the first-layer solenoid C12, the second-layer solenoid C12, and the third-layer solenoid C12 to reach the set value.
The currents in the fourth layer solenoid C12 and the fifth layer solenoid C12 are set by the following steps:
the third PC 27 sends the set value to the third PID controller 26; the third hall current sensor 25 measures the source current of the third field effect transistor 24 in real time and sends the measured value to the third PID controller 26 in real time; the third PID controller 26 compares the set value and the measured value, and adjusts the resistance value of the third field effect transistor 24 in accordance with the comparison result so that the measured value coincides with the set value, thereby causing the currents in the fourth layer solenoid C12 and the fifth layer solenoid C12 to reach the set value.
While specific embodiments of the invention have been described above, it will be appreciated by those skilled in the art that these are by way of example only, and that the scope of the invention is defined by the appended claims. Various changes and modifications to these embodiments may be made by those skilled in the art without departing from the spirit and scope of the invention, and these changes and modifications are within the scope of the invention.
Claims (7)
1. An atomic beam pre-reduction device special for ground state sodium cesium molecule preparation is characterized in that: comprises a first vacuum tube (1), a corrugated tube (2) and a second vacuum tube (3);
wherein, the first vacuum tube (1) is made of non-magnetic stainless steel, the outer diameter of the first vacuum tube is 2.5cm, and the length of the first vacuum tube is 70 cm; the inner diameter of the corrugated pipe (2) is 2cm, and the length of the corrugated pipe is 7.5 cm; the second vacuum tube (3) is made of nonmagnetic stainless steel, and has the outer diameter of 2.5cm and the length of 25 cm;
the left end of the first vacuum tube (1) is fixedly connected with a first flange interface (4); the right end of the first vacuum tube (1) is fixedly connected with a second flange interface (5); the left end of the corrugated pipe (2) is fixedly connected with a third flange interface (6), and the third flange interface (6) is coaxially butted with the second flange interface (5); the right end of the corrugated pipe (2) is fixedly connected with a fourth flange connector (7); the left end of the second vacuum tube (3) is fixedly connected with a fifth flange interface (8), and the fifth flange interface (8) is coaxially butted with the fourth flange interface (7); the right end of the second vacuum tube (3) is fixedly connected with a sixth flange interface (9);
a first solenoid group is sleeved on the outer side surface of the first vacuum tube (1);
the first solenoid group comprises twelve layers of solenoids A (10) which are sequentially stacked from inside to outside; the left end surfaces of the twelve layers of solenoids A (10) are all flush; the number of turns of the first layer of solenoids A (10) is 188; the number of turns of the second layer solenoid A (10) is 178 turns; the number of turns of the third layer solenoid A (10) is 168; the number of turns of the fourth layer solenoid A (10) is 156 turns; the number of turns of the fifth layer solenoid A (10) is 139 turns; the number of turns of the sixth layer solenoid A (10) is 126; the number of turns of the seventh layer solenoid A (10) is 110; the number of turns of the eighth layer solenoid A (10) is 90 turns; the number of turns of the ninth layer of the solenoid A (10) is 70; the number of turns of the tenth layer solenoid A (10) is 50; the number of turns of the eleventh layer solenoid A (10) is 32; the number of turns of the twelfth layer of the solenoid A (10) is 17;
a second solenoid group and a third solenoid group are respectively sleeved on the outer side surface of the second vacuum tube (3), and the third solenoid group is positioned on the right side of the second solenoid group;
the second solenoid group comprises five layers of solenoids B (11) which are sequentially stacked from inside to outside; the right end faces of the five layers of solenoids B (11) are all flush; the number of turns of the first layer solenoid B (11) is 33; the number of turns of the second layer solenoid B (11) is 24; the number of turns of the third layer solenoid B (11) is 15; the number of turns of the fourth layer solenoid B (11) is 10; the number of turns of the fifth layer solenoid B (11) is 7;
the third solenoid group comprises five layers of solenoids C (12) which are sequentially stacked from inside to outside; the left end faces of the five layers of solenoids C (12) are all flush; the number of turns of the first layer of solenoid C (12), the number of turns of the second layer of solenoid C (12), the number of turns of the third layer of solenoid C (12) and the number of turns of the fourth layer of solenoid C (12) are all 6 turns; the number of turns of the fifth layer solenoid C (12) is 4;
the winding direction of the twelve-layer solenoid A (10), the winding direction of the five-layer solenoid B (11) and the winding direction of the five-layer solenoid C (12) are consistent;
the lead wires of the twelve-layer solenoid A (10), the lead wires of the five-layer solenoid B (11) and the lead wires of the five-layer solenoid C (12) are all square hollow copper lead wires with the width of 0.3175cm and the inner diameter of 0.155 cm.
2. An atomic beam pre-reduction device special for ground state sodium cesium molecule preparation according to claim 1, characterized in that: the control circuit also comprises a first control circuit, a second control circuit and a third control circuit;
the first control circuit comprises a first direct-current power supply (13), a first field-effect tube (14), a first Hall current sensor (15), a first PID controller (16) and a first PC (17);
one end of a series branch formed by connecting twelve layers of solenoids A (10) end to end in series is connected with the positive output end of a first direct current power supply (13), and the other end of the series branch is connected with the drain electrode of a first field effect transistor (14); the source electrode of the first field effect transistor (14) is connected with the negative output end of the first direct current power supply (13); the first Hall current sensor (15) is arranged between the source electrode of the first field effect transistor (14) and the negative output end of the first direct current power supply (13); the first input end of the first PID controller (16) is connected with the output end of the first PC (17); the second input end of the first PID controller (16) is connected with the output end of the first Hall current sensor (15); the output end of the first PID controller (16) is connected with the grid of the first field effect transistor (14);
the second control circuit comprises a second direct-current power supply (18), a second field-effect tube (19), a second Hall current sensor (20), a second PID controller (21) and a second PC (personal computer) (22);
one end of a series branch formed by connecting five layers of solenoids B (11), a first layer of solenoid C (12), a second layer of solenoid C (12) and a third layer of solenoid C (12) in series end to end is connected with the positive output end of a second direct current power supply (18), and the other end of the series branch is connected with the drain electrode of a second field effect transistor (19); the source electrode of the second field effect transistor (19) is connected with the negative output end of the second direct current power supply (18); the second Hall current sensor (20) is arranged between the source electrode of the second field effect transistor (19) and the negative output end of the second direct current power supply (18); the first input end of the second PID controller (21) is connected with the output end of the second PC (22); a second input end of the second PID controller (21) is connected with an output end of the second Hall current sensor (20); the output end of the second PID controller (21) is connected with the grid of the second field effect transistor (19);
the third control circuit comprises a third direct-current power supply (23), a third field effect transistor (24), a third Hall current sensor (25), a third PID controller (26) and a third PC (personal computer) (27);
one end of a series branch formed by connecting a fourth layer solenoid C (12) and a fifth layer solenoid C (12) end to end in series is connected with the positive output end of a third direct current power supply (23), and the other end of the series branch is connected with the drain electrode of a third field effect transistor (24); the source electrode of the third field effect transistor (24) is connected with the negative output end of the third direct current power supply (23); the third Hall current sensor (25) is arranged between the source electrode of the third field effect transistor (24) and the negative output end of the third direct current power supply (23); a first input end of the third PID controller (26) is connected with an output end of the third PC (27); a second input end of the third PID controller (26) is connected with an output end of the third Hall current sensor (25); the output end of the third PID controller (26) is connected with the grid of the third field effect transistor (24).
3. An atomic beam pre-reduction device special for ground state sodium cesium molecule preparation according to claim 1, characterized in that: the first flange interface (4), the second flange interface (5), the third flange interface (6), the fourth flange interface (7), the fifth flange interface (8) and the sixth flange interface (9) are CF34 flange interfaces.
4. An atomic beam pre-deceleration method special for ground state sodium cesium molecule preparation, which is realized based on an atomic beam pre-deceleration device special for ground state sodium cesium molecule preparation as claimed in claim 1, and is characterized in that: the method is realized by adopting the following steps:
the method comprises the following steps: pre-decelerating the sodium atom beam:
connecting the first flange interface (4) with a sodium atom source; connecting the sixth flange interface (9) with the vacuum cavity; setting the current in each of the twelve layers of solenoids A (10) to + 19A; setting the currents in the five-layer solenoid B (11), the first-layer solenoid C (12), the second-layer solenoid C (12) and the third-layer solenoid C (12) to be-15A; the current in the fourth layer solenoid C (12) and the current in the fifth layer solenoid C (12) are both set to + 73A; then, heating the sodium atom source to 260 ℃, and allowing a sodium atom beam from the sodium atom source to enter the first vacuum tube (1) at the speed of 900 m/s; under the action of a magnetic field generated by the twelve layers of solenoids A (10), the five layers of solenoids B (11) and the five layers of solenoids C (12), a sodium atom beam sequentially passes through the first vacuum tube (1), the corrugated tube (2) and the second vacuum tube (3) to be decelerated, rotated, overturned and decelerated, enters a vacuum cavity and then is loaded into a magneto-optical trap;
step two: pre-decelerating the cesium atomic beam:
disconnecting the first flange interface (4) from the sodium atom source and connecting the first flange interface (4) with the cesium atom source; setting the current in each of the twelve layers of solenoids A (10) to + 2.5A; setting the current in the five-layer solenoid B (11), the first-layer solenoid C (12), the second-layer solenoid C (12) and the third-layer solenoid C (12) to be-3A; the currents in the fourth layer solenoid C (12) and the fifth layer solenoid C (12) are set to + 6A; then, the cesium atom source is heated to 65 ℃, and a cesium atom beam from the cesium atom source enters a first vacuum tube (1) at a speed of 216 m/s; under the action of a magnetic field generated by the twelve layers of solenoids A (10), the five layers of solenoids B (11) and the five layers of solenoids C (12), the cesium atom beams sequentially pass through the first vacuum tube (1), the corrugated tube (2) and the second vacuum tube (3) to be decelerated, rotated, overturned and decelerated, then enter the vacuum cavity, and then are loaded into the magneto-optical trap.
5. The atomic beam pre-deceleration method special for ground state sodium cesium molecule preparation as claimed in claim 4, characterized in that: the current in the twelve-layer solenoid a (10) is set by the following steps:
the first PC (17) sends the set value to the first PID controller (16); the first Hall current sensor (15) measures the source current of the first field effect transistor (14) in real time and sends the measured value to the first PID controller (16) in real time; the first PID controller (16) compares the set value and the measured value, and adjusts the resistance value of the first field effect transistor (14) according to the comparison result so that the measured value coincides with the set value, thereby causing the current in the twelve-layer solenoid A (10) to reach the set value.
6. The atomic beam pre-deceleration method special for ground state sodium cesium molecule preparation as claimed in claim 4, characterized in that: the currents in the five-layer solenoid B (11), the first-layer solenoid C (12), the second-layer solenoid C (12), and the third-layer solenoid C (12) are set by the following steps:
the second PC (22) sends the set value to the second PID controller (21); the second Hall current sensor (20) measures the source current of the second field effect transistor (19) in real time and sends the measured value to the second PID controller (21) in real time; the second PID controller (21) compares the set value and the measured value, and adjusts the resistance value of the second field effect tube (19) according to the comparison result so that the measured value coincides with the set value, thereby causing the currents in the five-layer solenoid B (11), the first-layer solenoid C (12), the second-layer solenoid C (12), and the third-layer solenoid C (12) to reach the set value.
7. The atomic beam pre-deceleration method special for ground state sodium cesium molecule preparation as claimed in claim 4, characterized in that: the current in the fourth layer solenoid C (12) and the fifth layer solenoid C (12) is set by the following steps:
the third PC (27) sends the set value to the third PID controller (26); the third Hall current sensor (25) measures the source current of the third field effect transistor (24) in real time and sends the measured value to the third PID controller (26) in real time; the third PID controller (26) compares the set value with the measured value, and adjusts the resistance value of the third field effect transistor (24) according to the comparison result so that the measured value coincides with the set value, thereby causing the currents in the fourth layer solenoid C (12) and the fifth layer solenoid C (12) to reach the set value.
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