CN112467003A - Deep ultraviolet light-emitting device with P-type region growing in parallel in quantum well region and preparation method thereof - Google Patents
Deep ultraviolet light-emitting device with P-type region growing in parallel in quantum well region and preparation method thereof Download PDFInfo
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
Abstract
The invention relates to a deep ultraviolet light emitting device with a P-type region growing in parallel with a quantum well region and a preparation method thereof. It is through p type AlGaN superlattice structure and quantum well region and borders on the contact setting side by side for every position hole can directly get into the quantum well region of place growing position, and movable to the arbitrary position of whole quantum well region participate in the complex, need not to participate in the complex step by step, has improved the injection efficiency in hole, combines p type GaN layer to set up in non-quantum well region in addition, has reduced deep ultraviolet and has been absorbed by p type GaN layer, has improved holistic light output.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a deep ultraviolet light-emitting device with a P-type region growing in parallel in a quantum well region and a preparation method thereof.
Background
The deep ultraviolet light-emitting device has the advantages of environmental protection, high efficiency, energy conservation, long service life, low cost and the like, and has wide application prospect in the field of disinfection and sterilization. The existing deep ultraviolet light-emitting device adopts AlGaN-based materials as main materials of a chip epitaxial structure, and mainly comprises a transverse structure and a vertical structure, wherein the two structures are formed by sequentially laminating a p-type layer, a quantum well region and an n-type layer, and electrodes are respectively arranged on the p-type layer and the n-type layer. When the quantum well structure works, the p-type layer injects holes into the quantum well region, the n-type layer injects electrons into the multi-quantum well region, and the electrons and the holes emit light in a radiation recombination mode in the quantum well region. The chip hole injection paths of the two structures are single, and the light-emitting efficiency is low. The substrate and the buffer layer are usually removed by a substrate stripping technology in the vertical structure, the heat dissipation of the chip is good, but the complex stripping process of the vertical structure can put higher requirements on production.
Disclosure of Invention
Aiming at the problems in the prior art, the p-type AlGaN region and the quantum well region are arranged in parallel abutting contact, so that a hole at each position can directly enter the quantum well region at the growth position, can move to any position of the whole quantum well region to participate in compounding, and does not need to participate in compounding step by step. Based on the above, the primary object of the present invention is to provide a deep ultraviolet light emitting device and a method for manufacturing the same, which have high light output efficiency, can improve the current aggregation effect, and have a simple manufacturing process and are suitable for mass production. Based on the purpose, the invention at least provides the following technical scheme:
a deep ultraviolet light emitting device with a P-type region growing in parallel with a quantum well region comprises a substrate and an N-type AlGaN layer, wherein the N-type AlGaN layer is positioned on the substrate; the P-type region and the quantum well region are adjacently arranged on the N-type AlGaN layer in parallel; the P-type region comprises a current blocking layer, a P-type AlGaN superlattice structure and a P-type GaN layer which are sequentially stacked on the N-type AlGaN layer, and the surface of the P-type AlGaN superlattice structure adjacent to the P-type GaN layer is flush with the surface of the quantum well region.
Preferably, the p-type AlGaN superlattice structure includes a superlattice barrier layer and a superlattice well layer, the superlattice barrier layer and the superlattice well layer form a period, the content of the Al component in the first superlattice barrier layer to the last superlattice barrier layer is gradually decreased from 0.8 to 0, and the content of the Al component in the first superlattice well layer to the last superlattice well layer is gradually decreased from 0.7 to 0; the number of periods of the p-type AlGaN superlattice structure is preferably 50, and the thickness of each period is preferably 2 nm.
Preferably, the P-type region surrounds and abuts the quantum well region in a U-shaped manner on the projection plane, and the U-shaped opening faces the quantum well region and is far away from the P-type region.
Preferably, the quantum well region comprises an AlGaN well layer and a barrier layer, and the Al composition in the barrier layer is higher than the Al composition in the well layer.
Preferably, the barrier layer thickness is greater than the well layer thickness; the Al component in the well layer is preferably 0.6, and the Al component in the barrier layer is preferably 0.5.
Preferably, the current blocking layer is an AlN insulating layer or SiO with an isolation function2An insulating layer, the thickness of the current blocking layer is preferably 8 nm.
Preferably, the thickness of the p-type GaN layer is preferably 20 nm; the N-type AlGaN layer contains Al0.5Ga0.5And the thickness of the N layer is preferably 1 μm.
Preferably, a buffer layer is arranged between the substrate and the N-type AlGaN layer, and the buffer layer is made of AlN or AlGaN.
The invention also provides a preparation method of the deep ultraviolet light-emitting device with the P-type region growing in parallel with the quantum well region, which comprises the following steps:
sequentially epitaxially growing an AlN buffer layer, an N-type AlGaN layer and a quantum well layer on a substrate to form an epitaxial lamination;
setting a mask layer with a preset pattern on the epitaxial lamination layer;
etching the epitaxial lamination layer to the surface of the N-type AlGaN layer to form a quantum well region;
removing the mask layer and growing a current blocking layer;
sequentially epitaxially growing a p-type AlGaN superlattice structure and a p-type GaN layer on the current blocking layer, wherein the surface of the p-type AlGaN superlattice structure adjacent to the p-type GaN layer is flush with the surface of the quantum well region;
etching the p-type GaN layer, the p-type AlGaN superlattice structure and the current blocking layer above the quantum well region;
and preparing an ohmic contact electrode.
Preferably, after removing the mask layer and before growing the current blocking layer, performing surface treatment on the surface of the N-type AlGaN layer to repair damage caused by etching.
The invention has at least the following beneficial effects:
according to the invention, the p-type AlGaN region and the quantum well region are arranged in parallel abutting contact, so that a hole at each position can directly enter the quantum well region at the growth position, and can move to any position of the whole quantum well region to participate in compounding without participating in compounding step by step.
On the other hand, compared with the traditional p-type GaN growing right above the multi-quantum well light emitting region, the p-type GaN layer is arranged in the non-quantum well region, a light emitting path generated by electron hole pair recombination of the quantum well region is avoided, absorption of deep ultraviolet light by the p-type GaN layer is reduced, and the overall light output is improved.
On the basis of the arrangement of the positions of the p-type AlGaN region, the superlattice structure is adopted, so that the Mg doping process difficulty is reduced, the process difficulty is favorably reduced, and the industrialized large-scale production is realized.
On the other hand, the position of the P-type region in the epitaxial structure is changed, so that current is enabled to flow from the P region to the quantum well region in a dispersed mode, the current gathering effect is improved, and optimization of thermal management in the deep ultraviolet light emitting device chip is achieved.
In addition, the current blocking layer is arranged between the P-type semiconductor layer and the N-type semiconductor layer and is in contact with the quantum well region of the epitaxial structure, and the current blocking layer has the function of isolating the P-type semiconductor layer from the N-type semiconductor layer. On one hand, the P-type semiconductor layer and the N-type semiconductor layer are isolated, so that the electron and hole are prevented from being compounded in advance, the situation that all current carriers flow to the multi-quantum well region to participate in electron-hole pair compound luminescence is ensured, and the internal quantum efficiency of the device is improved; on the other hand, the current flow direction is regulated, so that the current flows into the quantum well region completely.
Drawings
Fig. 1 is a schematic cross-sectional view of a deep ultraviolet light emitting device according to an embodiment of the present invention.
Fig. 2 is a schematic diagram of hole injection of a quantum well with a conventional structure and hole injection of a thin layer at a certain position in a deep ultraviolet light emitting device according to an embodiment of the present invention.
Fig. 3 is a schematic current flow diagram of the deep ultraviolet light emitting device of the present invention.
Fig. 4 is a graph of internal quantum efficiency of a deep ultraviolet light emitting device according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings, and the described embodiments are only a part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, other embodiments obtained by persons of ordinary skill in the art without any creative effort belong to the protection scope of the present invention.
The present invention will be described in further detail below. The invention provides a deep ultraviolet light emitting device with a P-type region growing in parallel in a quantum well region, which comprises a substrate 1, a buffer layer 2 and an N-type AlGaN layer 3 sequentially stacked on the substrate 1, wherein the P-type region and the quantum well region are adjacently arranged on the surface of the N-type AlGaN layer 3 in parallel, as shown in figure 1.
The substrate 1 may be a sapphire substrate or a silicon carbide substrate.The buffer layer 2 is made of AlN or undoped AlGaN. In the undoped AlGaN, the Al component is preferably 0.7, and the Ga component is preferably 0.3. In the N-type AlGaN layer 3, in one embodiment, the thickness is preferably 0.1 μm, and the N-type doping concentration is 5X 1018㎝-3。
The P-type region includes a current blocking layer 4, a P-type AlGaN superlattice structure 5, and a P-type GaN layer 6, which are sequentially stacked on the N-type AlGaN layer 3. As shown in fig. 1, the surface of the p-type AlGaN superlattice structure 5 adjacent to the p-type GaN layer 6 is flush with the surface of the quantum well region 7, i.e., the p-type GaN layer 6 is laminated only on the surface of the p-type AlGaN superlattice structure 5. This setting makes p type GaN layer 6 grow on the luminous path of non-multiple quantum well region, compares and grows directly over the multiple quantum well light-emitting zone in traditional p type GaN for deep ultraviolet is absorbed by p type GaN layer, and the setting of this structure has avoided the luminous path of multiple quantum well region electron hole pair complex production, has reduced the ultraviolet absorption, has improved holistic light output.
In one embodiment, as shown in fig. 1, the P-type AlGaN superlattice structure 5 and the current blocking layer 4 in the P-type region are formed in a stacked structure in parallel abutting contact with the quantum well region 7. Compared with the conventional vertical epitaxial structure, fig. 2 (a) is a schematic diagram of quantum well hole injection in the conventional structure, and holes injected into the multiple quantum well regions participate in recombination step by step. In the hole injection process in the structure of the invention, as shown in (b) of fig. 2, the hole at each position can directly enter the quantum well region at the same layer growth position, and can move to any position of the whole quantum well region to participate in recombination without participating in recombination step by step, thereby improving the hole injection efficiency and realizing the improvement of light output.
In one embodiment, the current blocking layer 4, the P-type AlGaN superlattice structure 5, and the P-type GaN layer 6 surround and adjoin the quantum well region 7 in a U-shape on a projection plane, and the U-shape is open toward the quantum well region 7 and away from the P-type region. The current blocking layer 4 is made of AlN insulating layer and SiO with isolation function2The insulating layer, in one embodiment, is preferably an AlN insulating layer. The thickness of the current blocking layer 4 is preferably 8 nm. The current blocking layer is arranged between the P-type layer and the N-type layer, contacts the quantum well region of the epitaxial structure and is provided with an isolated P-type region and an isolated N-type regionThe function of the zone. On one hand, the P-type semiconductor layer and the N-type semiconductor layer are isolated, so that the electron and hole are prevented from being compounded in advance, more current carriers are ensured to flow to the multi-quantum well region to participate in electron hole pair compound luminescence, the internal quantum efficiency of the device is improved, and on the other hand, the current flow direction is adjusted, so that the current flows into the quantum well region completely.
In order to facilitate doping and reduce lattice mismatch, a p-type AlGaN superlattice structure 5 is selected, the p-type AlGaN superlattice structure 5 is formed by alternately laminating a plurality of superlattice barrier layers and a plurality of superlattice well layers, the superlattice barrier layers and the superlattice well layers form a period, and the period number is preferably 50. The Al composition content in the first superlattice barrier layer to the last superlattice barrier layer is gradually decreased from 0.8 to 0 from the barrier layers along the c-axis direction. The Al component content in the first superlattice potential well layer to the last superlattice potential well layer is gradually reduced from 0.7 to 0. The thicknesses of the barrier layer and the potential well layer are both 2 nm. The doping impurity is Mg, and the average doping concentration of Mg in the whole p-type AlGaN superlattice structure is 5 multiplied by 1019cm-3. The arrangement of the p-type superlattice structure reduces the difficulty of the Mg doping process, and is favorable for realizing industrial large-scale production.
The p-type GaN layer 6 is arranged on the p-type AlGaN superlattice structure 5, the thickness of the p-type AlGaN superlattice structure is preferably 10nm, Mg is selected as a doping impurity, and the doping concentration is preferably 2 x 1020cm-3。
The quantum well region 7 is arranged adjacent to the p-type region in parallel, and the quantum well region 7 contains AlxGa1-xThe N-well layer and the barrier layer, wherein the Al component in the barrier layer is higher than that in the well layer, and the thickness of the barrier layer is larger than that of the well layer. In a specific embodiment, the light emitting wavelength of the device is about 270nm, the quantum well region comprises 6 pairs of well layers and barrier layers, the Al component in the barrier layers is preferably 0.6, the Al component in the well layers is preferably 0.5, the thickness of the barrier layers is preferably 15nm, and the thickness of the well layers is preferably 3 nm.
A p-ohmic contact electrode 7 is arranged on the surface of the p-type GaN layer, and an n-ohmic contact electrode 8 is arranged on the surface of the n-type AlGaN layer.
By changing the position of the P-type region in the epitaxial structure, the current flow direction in the device is changed, as shown in fig. 3. The current is distributed and flows to the quantum well region from the P-type region, the current aggregation effect is improved, the optimization of thermal management in the deep ultraviolet light emitting device chip is realized, the P-type GaN layer is located in the non-quantum well region, the absorption of the P-type layer to the deep ultraviolet light is reduced, and the light output is further improved. As shown in fig. 4, under the same injection current condition, the internal quantum efficiency of the deep ultraviolet light emitting device of the present invention is significantly higher than that of the hole injection mode of the conventional structure, and especially under the high current condition, the internal quantum efficiency of the deep ultraviolet light emitting device of the present invention is significantly improved.
Based on the deep ultraviolet light-emitting device, the invention also provides a preparation method of the deep ultraviolet light-emitting device with the P-type region growing in parallel with the quantum well region, the preparation method is simple in process, the preparation of the device can be realized by adopting the conventional growth process and etching process, the requirement on process precision is low, and the large-scale industrialization is facilitated. The method comprises the following steps:
first, a cleaned growth substrate is prepared, and in this embodiment, a c-plane sapphire substrate is selected as the growth substrate. The growth process adopts an MOCVD process, the substrate is placed on a carrying disc in an MOCVD reaction chamber, and the substrate is treated at the high temperature of 1000-1200 ℃ for 5-10 min. And then, introducing an Al source and an N source when the temperature is reduced to 500-900 ℃, and growing an AlN buffer layer on the substrate, wherein the thickness of the buffer layer is preferably 4 microns.
Adjusting the temperature to 1000-1300 ℃, and introducing a Ga source, an Al source and NH into the reaction chamber3Gas and SiH4An N-type AlGaN layer was grown with an Al composition of 0.5 and a growth thickness of 1 μm.
After the growth of the N-type layer is finished, the growth temperature is adjusted to 1050-1200 ℃, and SiH is stopped at the same time4And (3) continuously introducing a Ga source, an Al source and ammonia gas into the reaction chamber to grow the multi-quantum well structure. Wherein, the barrier layer AlxGa1-xThe growth thickness of N is 15nm, and x is 0.60; well layer AlyGa1-yN was grown to a thickness of 3nm and y was about 0.4. The whole quantum well light-emitting layer grows cyclically for 6 periods. And obtaining the epitaxial wafer with the epitaxial layer.
And (3) preparing an acid solution to clean the surface of the epitaxial wafer to remove impurities such as residual metal, oxide and the like.
And spin-coating a mask layer on the surface of the cleaned epitaxial wafer, wherein in the specific embodiment, a positive photoresist is selected as the mask layer, the thickness of the spin-coating is about 3 mu m, and the spin-coating is baked for 30s at 95 ℃. And photoetching by using a photoetching plate with a part of shielding quantum well region to form a photoresist mask layer with a preset pattern.
Dry etching is adopted, and BCl is selected3And Cl2As etching gas, Cl2Flow rate of 50sccm, BCl3The flow rate is 7sccm, the etching power is 80W, and the chamber pressure is 8 Pa. The time is 1min, the etching depth is 108nm, and the N-type AlGaN layer is etched until the N-type AlGaN layer is exposed.
And removing the photoresist mask layer, cleaning the surface of the epitaxial wafer by using a potassium hydroxide solution, and repairing the damage caused by etching, wherein the cleaning time is 5 min.
And growing a current blocking layer after repairing and cleaning, wherein in the specific embodiment, an AlN insulating layer is grown by using an MOCVD process as the current blocking layer. Introducing an Al source and NH into the reaction chamber at the temperature of 1000-1180 DEG C3And growing an AlN layer on the surface of the epitaxial layer to a thickness of about 8 nm.
Adjusting the temperature of the chamber to 950-1050 ℃, and introducing an Al source, a Ga source and NH into the reaction chamber3And gas and a Mg source, and growing a p-type AlGaN superlattice structure on the AlN isolating layer. Specifically, the p-type AlGaN superlattice structure is composed of AlxGa1-xN/AlyGa1-yThe N superlattice layer composition comprises a plurality of superlattice barrier layers and a plurality of superlattice potential well layers which are alternately stacked, wherein the Al component content in the first superlattice barrier layer to the last superlattice barrier layer is gradually reduced from 0.8 to 0 from the barrier layers along the c-axis direction, and the Al component content in the first superlattice potential well layer to the last superlattice potential well layer is gradually reduced from 0.7 to 0; the superlattice layer was grown for a total of 50 periods, each having a thickness of 2 nm. The average Mg doping concentration of the whole p-type AlGaN superlattice structure is about 5 multiplied by 1019cm-3。
Adjusting the temperature of the chamber to 950 ℃, and introducing Ga source and NH into the reaction chamber3Gas and Mg source, and growing P-type GaN layer with thickness of 10nm and Mg doping concentrationDegree of 2X 1020cm-3。
And depositing a mask layer, and etching the p-type GaN layer, the p-type AlGaN superlattice layer and the AlN layer of the quantum well region until the surface of the quantum well region is exposed. In this embodiment, the etching depth is 118 nm.
The above embodiments are preferred embodiments of the present invention, but the present invention is not limited to the above embodiments, and any other changes, modifications, substitutions, combinations, and simplifications which do not depart from the spirit and principle of the present invention should be construed as equivalents thereof, and all such changes, modifications, substitutions, combinations, and simplifications are intended to be included in the scope of the present invention.
Claims (10)
1. The utility model provides a deep ultraviolet light emitting device that P type district parallels quantum well region and grows, its includes the substrate, its characterized in that still includes:
the N-type AlGaN layer is positioned on the substrate;
the P-type region and the quantum well region are adjacently arranged on the N-type AlGaN layer in parallel;
the P-type region comprises a current blocking layer, a P-type AlGaN superlattice structure and a P-type GaN layer which are sequentially stacked on the N-type AlGaN layer, and the surface of the P-type AlGaN superlattice structure adjacent to the P-type GaN layer is flush with the surface of the quantum well region.
2. The deep ultraviolet light emitting device as claimed in claim 1, wherein the p-type AlGaN superlattice structure includes a superlattice barrier layer and a superlattice well layer, the superlattice barrier layer and the superlattice well layer constitute a period, the content of Al components in the first superlattice barrier layer to the last superlattice barrier layer decreases stepwise from 0.8 to 0, and the content of Al components in the first superlattice well layer to the last superlattice well layer decreases stepwise from 0.7 to 0; the number of periods of the p-type AlGaN superlattice structure is preferably 50, and the thickness of each period is preferably 2 nm.
3. The deep ultraviolet light emitting device of claim 2, wherein the P-type region surrounds and abuts the quantum well region in a U-shaped manner on a projection plane, and the U-shaped opening faces the quantum well region and is far away from the P-type region.
4. The deep ultraviolet light emitting device according to any one of claims 1 to 3, wherein the quantum well region comprises an AlGaN well layer and a barrier layer, and wherein an Al composition in the barrier layer is higher than an Al composition in the well layer.
5. The deep ultraviolet light emitting device of claim 4, wherein the barrier layer thickness is greater than the well layer thickness; the Al component in the well layer is preferably 0.6, and the Al component in the barrier layer is preferably 0.5.
6. The deep ultraviolet light emitting device as claimed in any one of claims 1 to 3, wherein the current blocking layer is made of AlN insulating layer or SiO with isolation function2An insulating layer, the thickness of the current blocking layer is preferably 8 nm.
7. The deep ultraviolet light emitting device of claim 1, wherein the thickness of the p-type GaN layer is preferably 10 nm; the N-type AlGaN layer contains Al0.5Ga0.5And the thickness of the N layer is preferably 1 μm.
8. The deep ultraviolet light emitting device of claim 1, wherein a buffer layer is disposed between the substrate and the N-type AlGaN layer, and the buffer layer is selected from AlN or AlGaN.
9. A preparation method of a deep ultraviolet light emitting device with a P-type region growing in parallel with a quantum well region is characterized by comprising the following steps:
sequentially epitaxially growing an AlN buffer layer, an N-type AlGaN layer and a quantum well layer on a substrate to form an epitaxial lamination;
setting a mask layer with a preset pattern on the epitaxial lamination layer;
etching the epitaxial lamination layer to the surface of the N-type AlGaN layer to form a quantum well region;
removing the mask layer and growing a current blocking layer;
sequentially epitaxially growing a p-type AlGaN superlattice structure and a p-type GaN layer on the current blocking layer, wherein the surface of the p-type AlGaN superlattice structure adjacent to the p-type GaN layer is flush with the surface of the quantum well region;
etching the p-type GaN layer, the p-type AlGaN superlattice structure and the current blocking layer above the quantum well region;
and preparing an ohmic contact electrode.
10. The method according to claim 9, wherein after the mask layer is removed and before the current blocking layer is grown, surface treatment is performed on the surface of the N-type AlGaN layer to repair damage caused by etching.
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| CN109273571A (en) * | 2018-09-06 | 2019-01-25 | 华灿光电（浙江）有限公司 | A kind of gallium nitride based LED epitaxial slice and preparation method thereof |
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