CN112466970B - Bicolor infrared focal plane detector and mesa etching process method thereof - Google Patents
Bicolor infrared focal plane detector and mesa etching process method thereof Download PDFInfo
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- 238000005530 etching Methods 0.000 title claims abstract description 93
- 238000000034 method Methods 0.000 title claims abstract description 85
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 45
- 238000001312 dry etching Methods 0.000 claims abstract description 34
- 238000001259 photo etching Methods 0.000 claims abstract description 8
- 238000004528 spin coating Methods 0.000 claims abstract description 3
- 239000000463 material Substances 0.000 claims description 61
- 239000000758 substrate Substances 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 239000002184 metal Substances 0.000 description 16
- 239000007789 gas Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 238000002161 passivation Methods 0.000 description 6
- 230000009977 dual effect Effects 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 229910005542 GaSb Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 239000002648 laminated material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
- H01L31/035263—Doping superlattices, e.g. nipi superlattices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a bicolor infrared focal plane detector and a mesa etching process method thereof, wherein the mesa etching process method comprises the following steps: s1, spin-coating photoresist on the epitaxial structure; s2, exposing the epitaxial structure by using a half-tone mask, wherein the epitaxial structure forms a first region and a second region after exposure; s3, carrying out first dry etching by etching gas; s4, by O2Removing all parts of the photoresist below the second region by using the plasma; s5, carrying out secondary dry etching by etching gas; and S6, removing the photoresist through a photoresist stripping process. The full exposure of a part needing deep etching and the half exposure of a part needing shallow etching on the epitaxial structure are realized through the halftone mask. In the whole etching process, different-depth etching of different parts can be realized only by one-time photoetching process and two-time dry etching process, so that the etching process flow is simplified, and the production efficiency is improved.
Description
Technical Field
The invention relates to the technical field of focal plane detectors, in particular to a bicolor infrared focal plane detector and a mesa etching process method thereof.
Background
The bicolor infrared focal plane detector is mainly applied to the aspects of high-contrast imaging and target identification. The double-color infrared detector system has compact structure and light weight, can simultaneously realize the detection of two wave bands, and is one of the main development directions of the infrared detection system. The InAs/GaSb second-class superlattice material is an ideal material for realizing bicolor infrared detection due to the special energy band structure, good material stability and multiple broad-spectrum response wave bands. The epitaxial structure of the two-class superlattice two-color infrared focal plane detector is generally an NP-PN or PN-NP back-to-back laminated structure, and the middle of the epitaxial structure is connected through a P-type or N-type common electrode. A plurality of mechanisms at home and abroad make great progress in the field, and the prepared detector covers various bicolor infrared focal plane detectors of short wave/medium wave bicolor, short wave/long wave bicolor, medium wave/long wave bicolor and the like.
In the mesa etching process of the laminated material structure of the double-color infrared focal plane detector, a lower electrode needs to be deeply etched, a public electrode needs to be shallowly etched, the traditional process flow is that the part needing deep etching and the part needing shallow etching are respectively subjected to photoetching mask process and then are independently etched, the process flow is complicated, and the production efficiency is low.
Disclosure of Invention
In view of the problems in the background art, the invention aims to provide a bicolor infrared focal plane detector and a mesa etching process method thereof, which simplify the etching process flow and improve the etching efficiency.
In order to achieve the purpose, the invention provides a mesa etching process method of a bicolor infrared focal plane detector, wherein the bicolor infrared focal plane detector comprises a substrate and an epitaxial structure deposited on the substrate, and the epitaxial structure sequentially comprises an electrode contact layer, a first superlattice material layer, a doped common electrode layer and a second superlattice material layer from bottom to top. The mesa etching process method of the bicolor infrared focal plane detector comprises the following steps: s1, spin-coating photoresist on the second superlattice material layer of the epitaxial structure; s2, exposing the epitaxial structure by using a halftone mask, wherein the halftone mask comprises a mask-free area and a half mask area, and a first area corresponding to the mask-free area and a second area corresponding to the half mask area are formed after exposure and development of the epitaxial structure; s3, carrying out first dry etching on the photoetching epitaxial structure through etching gas, wherein the etching depth of the corresponding part of the epitaxial structure below the first region through the first dry etching is h1(ii) a S4, placing the epitaxial structure after the first dry etching into a dry photoresist remover, and passing through O2The plasma carries out thinning and photoresist removing treatment on the photoresist, wherein the thinned thickness of the photoresist is the thickness of the residual photoresist below the second region; s5, carrying out secondary dry etching on the epitaxial structure after photoresist removal by the dry photoresist remover through etching gas, wherein the etching depth of the corresponding part of the epitaxial structure below the first region through the secondary dry etching is h2The etching depth of the corresponding part of the epitaxial structure below the second region through the second dry etching is H2，h1+h2>H2(ii) a S6, removing the photoresist of the epitaxial structure after the second dry etching through a photoresist removing and stripping processAnd finishing the mesa etching of the focal plane detector.
In the mesa etching process method for the bicolor infrared focal plane detector according to some embodiments, the electrode contact layer is an N-type electrode contact layer, the first superlattice material layer is a pin long-wave superlattice material layer or a pin medium-wave superlattice material layer, the doped common electrode layer is a P-type doped common electrode layer, and the second superlattice material layer is a nip medium-wave superlattice material layer or a nip short-wave superlattice material layer. Or the electrode contact layer is a P-type electrode contact layer, the first superlattice material layer is a nip long-wave superlattice material layer or a nip medium-wave superlattice material layer, the doped common electrode layer is an N-type doped common electrode layer, and the second superlattice material layer is a pin medium-wave superlattice material layer or a pin short-wave superlattice material layer.
In the mesa etching process method of the dual color infrared focal plane detector according to some embodiments, the photoresist has a thickness d in step S15And d is5>3um。
In the mesa etching process method of the dual color infrared focal plane detector according to some embodiments, in step S2, the width of the first region is equal to the width of the unmasked region, and the width of the second region is equal to the width of the half-masked region.
In the mesa etching process method of the dual color infrared focal plane detector according to some embodiments, in step S2, the depth of the first region formed after the exposure of the epitaxial structure is h0The depth of the second region is H0And h is0＝d5，H0<d5。
In the mesa etching process method of the bicolor infrared focal plane detector according to some embodiments, the thickness of the doped common electrode layer is d3The thickness of the second superlattice material layer is d4In step S3, d4<h1<d3+d4。
In a mesa etching process for a dual color infrared focal plane detector according to some embodiments, the electrode contact layer has a thickness d1The thickness of the first superlattice material layer is d2In step S5，d4+d3+d2<h1+h2<d4+d3+d2+d1。
In the mesa etching method for the bicolor infrared focal plane detector according to some embodiments, the doped common electrode layer has a thickness d3The thickness of the second superlattice material layer is d4In step S5, d4<H2<d4+d3。
In the mesa etching process method of the bicolor infrared focal plane detector according to some embodiments, the etching gas is Cl in steps S3 and S52、CH4、H2Ar or CH4、H2Ar or Cl2Ar or Cl2、H2、Ar。
The invention provides a bicolor infrared focal plane detector, wherein a table top of the bicolor infrared focal plane detector is formed by the table top etching process method.
The invention has the following beneficial effects:
in the mesa etching process method of the bicolor infrared focal plane detector, the complete exposure of a part needing deep etching and the half exposure of a part needing shallow etching on an epitaxial structure are realized through a halftone mask. In addition, in the whole mesa etching process, different-depth etching of a part needing deep etching and a part needing shallow etching can be realized only by one-time photoetching process and two-time dry etching process, so that the etching process flow is simplified, and the production efficiency is improved.
Drawings
FIG. 1 is a schematic structural diagram of an epitaxial structure of a bi-color infrared focal plane detector of the present invention before exposure through a halftone mask.
FIG. 2 is a schematic structural diagram of an epitaxial structure of the bi-color infrared focal plane detector of the present invention after exposure and development through a halftone mask.
Fig. 3 is a schematic structural diagram of the epitaxial structure of the two-color infrared focal plane detector in fig. 2 after the epitaxial structure is subjected to first dry etching.
Fig. 4 is a schematic structural diagram of the epitaxial structure of the two-color infrared focal plane detector in fig. 3 after photoresist stripping by a photoresist stripper.
Fig. 5 is a schematic structural diagram of the epitaxial structure of the bi-color infrared focal plane detector in fig. 4 after a second dry etching.
Fig. 6 is a schematic diagram of the epitaxial structure of the dual-color infrared focal plane detector of fig. 5 after the photoresist is removed by a photoresist stripping process.
Fig. 7 is a schematic structural view of a two-color infrared focal plane detector of the present invention.
Wherein the reference numerals are as follows:
1 substrate 42 Metal middle electrode
2 epitaxial structure 43 metal bottom electrode
21 electrode contact layer S photoresist
22 first superlattice material layer T half-tone mask
No mask region of 23 doped common electrode layer T1
24 half-masked region of the second layer of superlattice material T2
3 passivation layer A first region
4 second region of metal electrode B
41 metal top electrode
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some embodiments of the present application, but not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs; the terminology used in the description of the application herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application; the terms "including" and "having," and any variations thereof, in the description and claims of this application and the description of the above figures are intended to cover non-exclusive inclusions. The terms "first," "second," and the like in the description and claims of this application or in the above-described drawings are used for distinguishing between different elements and not for describing a particular sequential or chronological order.
Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the application. The appearances of the phrase in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. It is explicitly and implicitly understood by one skilled in the art that the embodiments described herein can be combined with other embodiments.
The bicolor infrared focal plane detector and the mesa etching process method thereof according to the application are explained in detail below with reference to the attached drawings.
Referring to fig. 7, the dual-color infrared focal plane detector of the present application includes a substrate 1, an epitaxial structure 2 deposited on the substrate 1, a passivation layer 3, and a metal electrode 4. The epitaxial structure 2 on the substrate 1 forms a table top of the bicolor infrared focal plane detector by a table top etching process method described below, and the passivation layer 3 and the metal electrode 4 are arranged on the table top of the focal plane detector.
In an embodiment, the substrate 1 is a GaSb substrate or a GaAs substrate.
The epitaxial structure 2 sequentially comprises an electrode contact layer 21, a first superlattice material layer 22, a doped common electrode layer 23 and a second superlattice material layer 24 from bottom to top. The epitaxial structure 2 is an NP-PN or PN-NP back-to-back laminated structure.
In an embodiment, the electrode contact layer 21 of the epitaxial structure 2 is an N-type electrode contact layer, the first superlattice material layer 22 is a pin long-wave superlattice material layer or a pin medium-wave superlattice material layer, the doped common electrode layer 23 is a P-type doped common electrode layer, and the second superlattice material layer 24 is a nip medium-wave superlattice material layer or a nip short-wave superlattice material layer.
In one embodiment, the electrode contact layer 21 is a P-type electrode contact layer, the first superlattice material layer 22 is a nip long-wave superlattice material layer or a nip medium-wave superlattice material layer, the doped common electrode layer 23 is an N-type doped common electrode layer, and the second superlattice material layer 24 is a pin medium-wave superlattice material layer or a pin short-wave superlattice material layer.
In one embodiment, the passivation layer 3 may be silicon oxide. Silicon oxide is deposited on the mesa of the focal plane detector by a low temperature deposition process to form the passivation layer 3. Wherein, the thickness of the passivation layer 3 may be 300 nm.
The metal electrode 4 includes a metal upper electrode 41, a metal middle electrode 42, and a metal lower electrode 43. In one embodiment, the metal upper electrode 41 is in contact with the second superlattice material layer 24, the metal middle electrode 42 is in contact with the doped common electrode layer 23, and the metal lower electrode 43 is in contact with the electrode contact layer 21.
In one embodiment, the metal electrode 4 may be a metal Ti/Pt/Au (i.e., a three-layer structure formed by sequentially stacking a Ti film, a Pt film, and an Au film). Specifically, the thickness of the Ti film layer may be 50nm, the thickness of the Pt film layer is 50nm, and the thickness of the Au film layer is 200 nm.
Referring to fig. 1 to 6, the mesa etching process method of the bicolor infrared focal plane detector of the present application includes steps S1-S6.
S1, a photoresist S is spun on the second layer 24 of superlattice material of the epitaxial structure 2 (as shown in fig. 1). S2, exposing the epitaxial structure 2 by using a halftone mask T, wherein the halftone mask T includes a mask-free region T1 and a mask-free region T2 (as shown in fig. 1), and after exposure and development of the epitaxial structure 2, a first region a corresponding to the mask-free region T1 and a second region B corresponding to the mask-free region T2 (as shown in fig. 2) are formed. S3, carrying out first dry etching on the epitaxial structure 2 after photoetching through etching gas, wherein the etching depth of the corresponding part of the epitaxial structure 2 below the first area A through the first dry etching is h1(as shown in fig. 3). S4, placing the epitaxial structure 2 subjected to the first dry etching into a dry photoresist remover, and passing through O2The plasma thins and removes the photoresist S, and the thinned photoresist S is the remaining photoresist below the second region (as shown in fig. 4). S5, performing secondary dry etching on the epitaxial structure 2 after photoresist removal by the dry photoresist remover through etching gas, wherein the etching depth of the corresponding part of the epitaxial structure 2 below the first region A through the secondary dry etching is h2The etching depth of the corresponding part of the epitaxial structure 2 below the second region B through the second dry etching is H2，h1+h2>H2(as shown in fig. 5). And S6, removing the photoresist S from the epitaxial structure 2 subjected to the second dry etching by a photoresist stripping process, and thus completing the mesa etching of the focal plane detector (as shown in FIG. 6).
In the mesa etching process method of the two-color infrared focal plane detector, the complete exposure of a part needing deep etching (namely, the part of the epitaxial structure 2 below the first area A) and the half exposure of a part needing shallow etching (namely, the part of the epitaxial structure 2 below the second area B) on the epitaxial structure 2 are realized through the halftone mask T. In addition, in the whole mesa etching process, different-depth etching of a part needing deep etching and a part needing shallow etching can be realized only by one-time photoetching process and two-time dry etching process, so that the etching process flow is simplified, and the production efficiency is improved.
In step S1, the photoresist S has a thickness d5And d is5Can be reasonably arranged according to different requirements of the mesa etching process. In one embodiment, d5>3um。
In step S2, the width of the first region a is equal to the width of the no-mask region T1, and the width of the second region B is equal to the width of the half-mask region T2. In one embodiment, the width of the first region a is 3um, and the width of the second region B is 2 um.
In one embodiment, referring to fig. 2, in step S2, the depth of the first region a formed after the exposure and development of the epitaxial structure 2 is h0The depth of the second region B is H0And h is0＝d5，H0<d5。
It should be noted that, because the photoresist S is also subjected to etching losses of different degrees in the dry etching process, in order to ensure that enough photoresist S is reserved before the second dry etching to protect the portion to be subjected to the shallow etching, in step S2, the exposure degree of the photoresist S may be accurately controlled by adjusting the transmittance of the corresponding region on the halftone mask T, so that the thickness of the photoresist remaining above the portion to be subjected to the shallow etching after development satisfies the protective effect of the first dry etching.
Referring to fig. 1, the electrode contact layer 21 of the epitaxial structure 2 has a thickness d1The thickness of the first superlattice material layer 22 is d2The thickness of the doped common electrode layer 23 is d3The second superlattice material layer 24 has a thickness d4. In addition, the thicknesses of the electrode contact layer 21, the first superlattice material layer 22, the doped common electrode layer 23 and the second superlattice material layer 24 can be set reasonably based on production requirements. In one embodiment, d1＝0.5um，d2＝2.8um，d3＝0.5um，d4＝2.5um。
In one embodiment, referring to FIG. 3, in step S3, d4<h1<d3+d4. That is, after the epitaxial structure 2 is subjected to the first dry etching, the etching depth of the portion to be etched back reaches the doped common electrode layer 23.
In one embodiment, referring to FIG. 5, in step S5, d4+d3+d2<h1+h2<d4+d3+d2+d1. Namely, after the epitaxial structure 2 is etched by the second dry method, the etching depth of the part needing to be etched deeply reaches the electrode contact layer 21 so as to isolate two adjacent pixels on the bicolor infrared focal plane detector.
In one embodiment, referring to FIG. 5, in step S5, d4<H2<d4+d3. That is, after the epitaxial structure 2 is subjected to the second dry etching, the etching depth of the part needing the shallow etching reaches the doped common electrode layer 23, so as to prepare the metal middle electrode 42 on the common electrode layer 23, and finally realize the electric signalTo output of (c).
Therefore, the etching depth of the part needing deep etching reaches the electrode contact layer 21 and the etching depth of the part needing shallow etching reaches the doped common electrode layer 23 through one-time photoetching process and two-time dry etching, so that different-depth etching of different parts of the epitaxial structure 2 is realized, the etching process flow is simplified, and the production efficiency is improved.
In one embodiment, in steps S3 and S5, the etching gas may be Cl2、CH4、H2Ar or CH4、H2Ar or Cl2Ar or Cl2、H2And Ar. Of course, the etching gas can be other gases and combinations thereof that can be used for etching.
Claims (8)
1. A mesa etching process method of a bicolor infrared focal plane detector comprises a substrate (1) and an epitaxial structure (2) deposited on the substrate (1), wherein the epitaxial structure (2) sequentially comprises an electrode contact layer (21), a first superlattice material layer (22), a doped common electrode layer (23) and a second superlattice material layer (24) from bottom to top;
the table-board etching process method of the bicolor infrared focal plane detector is characterized by comprising the following steps:
s1, spin-coating photoresist (S) on the second superlattice material layer (24) of the epitaxial structure (2);
s2, exposing the epitaxial structure (2) by using a half-tone mask (T), wherein the half-tone mask (T) comprises a no-mask area (T1) and a half-mask area (T2), and a first area (A) corresponding to the no-mask area (T1) and a second area (B) corresponding to the half-mask area (T2) are formed after the epitaxial structure (2) is exposed and developed;
s3, carrying out first dry etching on the epitaxial structure (2) after photoetching through etching gas, wherein the etching depth of the corresponding part of the epitaxial structure (2) below the first region (A) through the first dry etching is
，
Reach the inside of the doped common electrode layer (23);
s4, placing the epitaxial structure (2) subjected to the first dry etching into a dry photoresist remover, and passing through
The plasma carries out thinning and photoresist removing treatment on the photoresist (S), wherein the thinned thickness of the photoresist (S) is the thickness of the residual photoresist below the second region;
s5, carrying out secondary dry etching on the epitaxial structure (2) after photoresist removal by the dry photoresist remover through etching gas, wherein the etching depth of the corresponding part of the epitaxial structure (2) below the first region (A) through the secondary dry etching is
，
+
Reaching the inside of the electrode contact layer (21), and the etching depth of the corresponding part of the epitaxial structure (2) below the second region (B) through the second dry etching is
，
Reaches the inside of the doped common electrode layer (23),
；
and S6, removing the photoresist (S) of the epitaxial structure (2) subjected to the second dry etching through a photoresist removing and stripping process, and completing the mesa etching of the bicolor infrared focal plane detector.
2. The mesa etching process method of the bi-color infrared focal plane detector of claim 1,
the electrode contact layer (21) is an N-type electrode contact layer, the first superlattice material layer (22) is a pin long-wave superlattice material layer or a pin medium-wave superlattice material layer, the doped common electrode layer (23) is a P-type doped common electrode layer, and the second superlattice material layer (24) is a nip medium-wave superlattice material layer or a nip short-wave superlattice material layer; or
The electrode contact layer (21) is a P-type electrode contact layer, the first superlattice material layer (22) is a nip long-wave superlattice material layer or a nip medium-wave superlattice material layer, the doped common electrode layer (23) is an N-type doped common electrode layer, and the second superlattice material layer (24) is a pin medium-wave superlattice material layer or a pin short-wave superlattice material layer.
3. The mesa etching process method of a bi-color infrared focal plane detector of claim 1, wherein in step S1, the photoresist (S) has a thickness of
And is and
。
4. the mesa etching process method of a dichroic infrared focal plane detector according to claim 1, wherein in step S2, the width of the first region (a) is equal to the width of the unmasked region (T1), and the width of the second region (B) is equal to the width of the half masked region (T2).
5. The mesa etching process method of a two-color infrared focal plane detector according to claim 3, wherein in step S2, the depth of the first region (A) formed after the exposure and development of the epitaxial structure (2) is set to be
The depth of the second region (B) is
And is and
，
。
6. the mesa etching process for bi-color infrared focal plane detector of claim 1, wherein the thickness of the doped common electrode layer (23) is
The second superlattice material layer (24) has a thickness of
In step S3, the process proceeds,
。
7. the mesa etching process for bi-color infrared focal plane detector of claim 6, wherein the thickness of the electrode contact layer (21) is
The first superlattice material layer (22) has a thickness of
In step S5, the process proceeds,
。
8. the mesa etching process for bi-color infrared focal plane detector of claim 1, wherein the thickness of the doped common electrode layer (23) is
The second superlattice material layer (24) has a thickness of
In the step S5, the program is executed,
。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011352401.5A CN112466970B (en) | 2020-11-26 | 2020-11-26 | Bicolor infrared focal plane detector and mesa etching process method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011352401.5A CN112466970B (en) | 2020-11-26 | 2020-11-26 | Bicolor infrared focal plane detector and mesa etching process method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112466970A CN112466970A (en) | 2021-03-09 |
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| CN109326519A (en) * | 2018-09-11 | 2019-02-12 | 西安微电子技术研究所 | A kind of inclination angle silicon groove etching process |
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