CN112466911B - Preparation method of silicon-on-insulator micro-display and micro-display - Google Patents
Preparation method of silicon-on-insulator micro-display and micro-display Download PDFInfo
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- CN112466911B CN112466911B CN202011226097.XA CN202011226097A CN112466911B CN 112466911 B CN112466911 B CN 112466911B CN 202011226097 A CN202011226097 A CN 202011226097A CN 112466911 B CN112466911 B CN 112466911B
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- 239000012212 insulator Substances 0.000 title claims abstract description 40
- 238000002360 preparation method Methods 0.000 title abstract description 11
- 239000010410 layer Substances 0.000 claims abstract description 78
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 25
- 239000010703 silicon Substances 0.000 claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 claims abstract description 23
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 16
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 16
- 239000011241 protective layer Substances 0.000 claims abstract description 14
- 239000011159 matrix material Substances 0.000 claims abstract description 12
- 239000011521 glass Substances 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 230000003287 optical effect Effects 0.000 claims abstract description 6
- 238000004806 packaging method and process Methods 0.000 claims abstract description 5
- 238000000227 grinding Methods 0.000 claims abstract description 4
- 239000011248 coating agent Substances 0.000 claims abstract description 3
- 238000000576 coating method Methods 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 15
- 238000010586 diagram Methods 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/40—OLEDs integrated with touch screens
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The invention discloses a preparation method of a silicon-on-insulator micro display and the micro display, comprising the following steps: providing a silicon-on-insulator substrate; manufacturing a driving circuit on the outer side of the upper silicon layer, and coating an insulator layer; manufacturing a black matrix, an RGB optical filter and a liner opening at the outer side of the upper insulator layer, and forming a protective layer on the black matrix and the RGB optical filter; a glass cover plate and a first slide glass are sequentially fixed on the outer side of the protective layer; completely grinding the lower silicon layer to expose the silicon dioxide layer; manufacturing a via hole on the silicon dioxide layer and the insulator; manufacturing a transparent electrode and a pixel definition layer outside the exposed silicon dioxide layer; sequentially manufacturing a packaging layer, an opaque electrode and a light-emitting layer on the outer sides of the transparent electrode and the pixel definition layer; a second carrier is fixed on the outer side of the luminous layer; and peeling the first slide and bonding to obtain the micro display. The invention improves the reliability of the micro display driving backboard and the display screen.
Description
Technical Field
The invention relates to a silicon-on-insulator micro display structure, in particular to a preparation method of a silicon-on-insulator micro display and the micro display.
Background
The prior art discloses a preparation method of a high-contrast transmission type silicon-based liquid crystal micro display screen, which is characterized in that chromium/chromium oxide shading lines are manufactured on the back surface of a transparent silicon-based driving back plate of the micro display screen at the driving units and wiring positions of pixels, so that the luminous crosstalk between the pixels is reduced, and the contrast of the display screen is improved. However, the display screen of the present stage has a problem in that the transistor performance is deteriorated due to the strong backlight source irradiating the transistor driving the pixel unit.
Disclosure of Invention
The invention aims to provide a preparation method of a silicon-on-insulator micro-display, which can avoid the problem of deterioration of transistor performance caused by strong backlight irradiation to drive transistors of pixel units and improve the reliability of a micro-display driving backboard and a display screen.
In order to achieve the above object, the present invention provides a method for manufacturing a silicon-on-insulator micro display, comprising: providing a silicon-on-insulator substrate, wherein the upper silicon substrate comprises an upper silicon layer, a lower silicon layer, and a silicon dioxide layer disposed between the upper and lower silicon layers; manufacturing a driving circuit on the outer side of the upper silicon layer, and coating an insulator layer; manufacturing a black matrix, an RGB optical filter and a liner opening on the outer side of the upper insulator layer, and forming a protective layer on the black matrix and the RGB optical filter; a glass cover plate and a first slide glass are sequentially fixed on the outer side of the protective layer; completely grinding the lower silicon layer so that the silicon dioxide layer is exposed; manufacturing a via hole on the silicon dioxide layer and the insulator; manufacturing a transparent electrode and a pixel definition layer on the exposed outer side of the silicon dioxide layer; sequentially manufacturing a packaging layer, an opaque electrode and a light-emitting layer on the outer sides of the transparent electrode and the pixel definition layer; a second carrier is fixed on the outer side of the luminous layer; and peeling the first slide and bonding to obtain the micro display.
Preferably, the transparent electrode and the pixel defining layer are spaced apart, wherein the transparent electrode is disposed between every two adjacent pixel defining layers.
Preferably, the transparent electrode is connected to one end of the via hole.
Preferably, the protective layer and the insulator layer cooperate to cover the black matrix, the RGB filter, the protective layer and the pad opening.
In addition, the invention provides a micro-display, which is prepared by the preparation method of the silicon-on-insulator micro-display.
According to the technical scheme, the OLED-last process is realized by using the silicon-on-insulator driving backboard and utilizing the light transmittance of the silicon-on-insulator. The low-temperature color photoresist used in the prior light-emitting diode process can be avoided, the material selection range of the photoresist is wide, the preparation is not limited by temperature, and the problems of limited color photoresist material supply, low Wen Guangzu color gamut, low process temperature and the like caused by the fact that the process temperature is low are solved.
Additional features and advantages of the invention will be set forth in the detailed description which follows.
Drawings
The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification, illustrate the invention and together with the description serve to explain, without limitation, the invention. In the drawings:
FIG. 1 is a schematic diagram illustrating the structure of a micro display according to the present invention;
fig. 2 is a schematic diagram of the structure after S101 is performed;
fig. 3 is a schematic diagram of the structure after S102 is performed;
fig. 4 is a schematic structural diagram after S103 is performed;
fig. 5 is a schematic diagram of the structure after S104 is performed;
fig. 6 is a schematic diagram of the structure after S105 is performed;
fig. 7 is a schematic diagram of the structure after S106 is performed;
fig. 8 is a schematic diagram of the structure after S107 is performed;
fig. 9 is a schematic diagram of the structure after S108 is performed;
fig. 10 is a schematic diagram of the structure after S109 is performed; and
fig. 11 is a flowchart illustrating a method of fabricating a micro-display according to the present invention.
Description of the reference numerals
1. Upper silicon layer 2 silicon dioxide layer
3. Lower silicon layer 4 insulator layer
5. Protective layer of drive circuit 6
7. First slide of glass cover plate 8
9. Transparent electrode with via holes 10
11. Pixel definition layer 12 encapsulation layer
13. Opaque electrode 14 light emitting layer
15. Second slide 16 gasket opening
17. Black matrix and RGB filter
Detailed Description
The following describes specific embodiments of the present invention in detail with reference to the drawings. It should be understood that the detailed description and specific examples, while indicating and illustrating the invention, are not intended to limit the invention.
In the present invention, unless otherwise indicated, terms such as "upper, lower, left, right" and the like are used merely to denote orientations of the term in a normal use state, or are commonly understood by those skilled in the art, and should not be construed as limiting the term.
Fig. 11 is a flowchart of a method for manufacturing a silicon-on-insulator micro-display according to the present invention, as shown in fig. 11, the method for manufacturing a silicon-on-insulator micro-display includes:
s101, providing a silicon-on-insulator substrate, wherein the upper silicon substrate comprises an upper silicon layer 1, a lower silicon layer 3 and a silicon dioxide layer 2 arranged between the upper silicon layer 1 and the lower silicon layer 3, and the manufactured silicon-on-insulator substrate is shown in fig. 2.
S102, a driving circuit 5 is fabricated on the outer side of the upper silicon layer 1, and an insulator layer 4 is coated. As shown in fig. 3.
S103, a black matrix, an RGB filter 17, and a pad opening 16 are formed on the outer side of the upper insulator layer 4, and a protective layer 6 is formed on the black matrix and the RGB filter. As shown in fig. 4.
S104, a glass cover plate 7 and a first slide 8 are sequentially fixed on the outer side of the protective layer 6. As shown in fig. 5.
S105, completely grinding away the lower silicon layer 3, so that the silicon dioxide layer 2 is exposed. As shown in fig. 6. The structure after S104 is flipped before step S105 is performed.
And S106, manufacturing a via hole 9 on the silicon dioxide layer 2 and the insulator. As shown in fig. 7.
And S107, manufacturing a transparent electrode 10 and a pixel definition layer 11 outside the exposed silicon dioxide layer 2. As shown in fig. 8.
S108, a packaging layer 12, an opaque electrode 1310 and a light-emitting layer 14 are sequentially formed outside the transparent electrode 10 and the pixel defining layer 11. As shown in fig. 9.
S109, a second carrier sheet 15 is fixed to the outer side of the light-emitting layer 14. As shown in fig. 10.
S110, peeling the first slide 8 and bonding to obtain the micro-display. As shown in fig. 1. Before executing S110, the structure after executing S109 is flipped.
Preferably, the transparent electrode 10 and the pixel defining layer 11 are arranged at intervals, wherein the transparent electrode 10 is arranged between every two adjacent pixel defining layers 11.
Preferably, the transparent electrode 10 is connected to one end of the via hole 9.
Preferably, the protective layer 6 cooperates with the insulator layer 4 to cover the black matrix, the RGB filter 17, the protective layer 6 and the pad opening 16.
In addition, the invention provides a micro-display, which is prepared by the preparation method of the silicon-on-insulator micro-display.
The micro-display has the same technical effects as the preparation method of the silicon-on-insulator micro-display. The invention utilizes the light transmittance of the silicon on insulator to realize the OLED-last process. The low-temperature color photoresist used in the prior light-emitting diode process can be avoided, the selection range of the photoresist material is wider, the preparation is not limited by temperature, and the problems of limited supply of the color photoresist material, low Wen Guangzu color gamut, low process temperature and the like caused by the fact that the process temperature is low are solved.
The foregoing is merely exemplary of the present application and is not intended to limit the present application. Various modifications and changes may be made to the present application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc. which are within the spirit and principles of the present application are intended to be included within the scope of the claims of the present application.
Claims (4)
1. A method for manufacturing a silicon-on-insulator microdisplay, the method comprising:
providing a silicon-on-insulator substrate, wherein the silicon-on-insulator substrate comprises an upper silicon layer, a lower silicon layer, and a silicon dioxide layer disposed between the upper and lower silicon layers;
manufacturing a driving circuit on the outer side of the upper silicon layer, and coating an insulator layer;
manufacturing a black matrix, an RGB optical filter and a liner opening on the outer side of the upper insulator layer, and forming a protective layer on the black matrix and the RGB optical filter;
a glass cover plate and a first slide glass are sequentially fixed on the outer side of the protective layer;
completely grinding the lower silicon layer so that the silicon dioxide layer is exposed;
manufacturing a via hole on the silicon dioxide layer and the upper insulator layer;
manufacturing a transparent electrode and a pixel definition layer on the exposed outer side of the silicon dioxide layer;
sequentially manufacturing a light-emitting layer, an opaque electrode and a packaging layer on the outer sides of the transparent electrode and the pixel definition layer;
a second carrier is fixed on the outer side of the packaging layer; and
peeling the first slide and bonding to obtain a micro display;
the transparent electrodes and the pixel defining layers are arranged at intervals, wherein the transparent electrodes are arranged between every two adjacent pixel defining layers.
2. The method of manufacturing a silicon-on-insulator microdisplay of claim 1, wherein the transparent electrode is connected to one end of the via.
3. The method of claim 1, wherein the protective layer cooperates with the upper insulator layer to encapsulate both the black matrix and the RGB filter.
4. A micro-display prepared by the method of preparing a silicon-on-insulator micro-display according to any one of claims 1-3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011226097.XA CN112466911B (en) | 2020-11-05 | 2020-11-05 | Preparation method of silicon-on-insulator micro-display and micro-display |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011226097.XA CN112466911B (en) | 2020-11-05 | 2020-11-05 | Preparation method of silicon-on-insulator micro-display and micro-display |
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| Publication Number | Publication Date |
|---|---|
| CN112466911A CN112466911A (en) | 2021-03-09 |
| CN112466911B true CN112466911B (en) | 2024-03-15 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20080035835A (en) * | 2006-10-20 | 2008-04-24 | 삼성전자주식회사 | Display device |
| CN102543832A (en) * | 2011-12-30 | 2012-07-04 | 中国电子科技集团公司第五十五研究所 | Method for manufacturing transparent silicon-based substrate with integrated circuit (IC) device |
| CN107359262A (en) * | 2017-07-07 | 2017-11-17 | 安徽熙泰智能科技有限公司 | A kind of transparent OLED micro-display devices and preparation method thereof |
| CN110854155A (en) * | 2018-07-31 | 2020-02-28 | 三星显示有限公司 | Organic light emitting diode display device and method of manufacturing the same |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7129634B2 (en) * | 2004-04-07 | 2006-10-31 | Eastman Kodak Company | Color OLED with added color gamut pixels |
| KR100721569B1 (en) * | 2004-12-10 | 2007-05-23 | 삼성에스디아이 주식회사 | Organic Electroluminescence Device Having Color Filter Layer |
-
2020
- 2020-11-05 CN CN202011226097.XA patent/CN112466911B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20080035835A (en) * | 2006-10-20 | 2008-04-24 | 삼성전자주식회사 | Display device |
| CN102543832A (en) * | 2011-12-30 | 2012-07-04 | 中国电子科技集团公司第五十五研究所 | Method for manufacturing transparent silicon-based substrate with integrated circuit (IC) device |
| CN107359262A (en) * | 2017-07-07 | 2017-11-17 | 安徽熙泰智能科技有限公司 | A kind of transparent OLED micro-display devices and preparation method thereof |
| CN110854155A (en) * | 2018-07-31 | 2020-02-28 | 三星显示有限公司 | Organic light emitting diode display device and method of manufacturing the same |
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| CN112466911A (en) | 2021-03-09 |
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