CN112466911A - Preparation method of silicon-on-insulator micro-display and micro-display - Google Patents
Preparation method of silicon-on-insulator micro-display and micro-display Download PDFInfo
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- CN112466911A CN112466911A CN202011226097.XA CN202011226097A CN112466911A CN 112466911 A CN112466911 A CN 112466911A CN 202011226097 A CN202011226097 A CN 202011226097A CN 112466911 A CN112466911 A CN 112466911A
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- layer
- silicon
- insulator
- outer side
- transparent electrode
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- 239000012212 insulator Substances 0.000 title claims abstract description 44
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 239000010410 layer Substances 0.000 claims abstract description 82
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 33
- 239000010703 silicon Substances 0.000 claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 claims abstract description 21
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 16
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 16
- 239000011521 glass Substances 0.000 claims abstract description 14
- 239000011159 matrix material Substances 0.000 claims abstract description 12
- 239000011241 protective layer Substances 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 230000003287 optical effect Effects 0.000 claims abstract description 6
- 238000000227 grinding Methods 0.000 claims abstract description 4
- 239000011248 coating agent Substances 0.000 claims abstract description 3
- 238000000576 coating method Methods 0.000 claims abstract description 3
- 238000004806 packaging method and process Methods 0.000 claims abstract description 3
- 125000006850 spacer group Chemical group 0.000 claims description 2
- -1 RGB filters Substances 0.000 claims 1
- 238000000034 method Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/40—OLEDs integrated with touch screens
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The invention discloses a preparation method of a silicon-on-insulator micro-display and the micro-display, comprising the following steps: providing a silicon-on-insulator substrate; manufacturing a driving circuit on the outer side of the upper silicon layer, and coating an insulator layer; manufacturing openings of a black matrix, an RGB (red, green and blue) optical filter and a liner on the outer side of the upper insulator layer, and forming a protective layer on the black matrix and the RGB optical filter; a glass cover plate and a first slide glass are sequentially fixed on the outer side of the protective layer; completely grinding the lower silicon layer to expose the silicon dioxide layer; manufacturing a through hole on the silicon dioxide layer and the insulator; manufacturing a transparent electrode and a pixel defining layer on the outer side of the exposed silicon dioxide layer; sequentially manufacturing a packaging layer, a non-transparent electrode and a light-emitting layer on the outer sides of the transparent electrode and the pixel defining layer; a second slide glass is fixed on the outer side of the luminescent layer; and stripping the first slide and bonding to obtain the micro display. The invention improves the reliability of the micro-display driving back plate and the display screen.
Description
Technical Field
The invention relates to a silicon-on-insulator micro-display structure, in particular to a preparation method of a silicon-on-insulator micro-display and the micro-display.
Background
In the prior art, a method for manufacturing a high-contrast transmission-type silicon-based liquid crystal micro display screen is disclosed, wherein chromium/chromium oxide shading lines are manufactured on the back surface of a transparent silicon-based driving back plate of the micro display screen and at the positions of driving units and wiring lines of pixels, so that luminous crosstalk among pixels is reduced, and the contrast of the display screen is improved. However, the display panel at present has a problem that the transistor performance is deteriorated due to strong backlight irradiation to the transistor driving the pixel unit.
Disclosure of Invention
The invention aims to provide a preparation method of a silicon-on-insulator micro-display, which can avoid the problem of transistor performance deterioration caused by strong backlight source irradiating a transistor of a driving pixel unit and improve the reliability of a micro-display driving backboard and a display screen.
In order to achieve the above object, the present invention provides a method of fabricating a silicon on insulator microdisplay, the method comprising: providing a silicon-on-insulator substrate, wherein the silicon-on-insulator substrate comprises an upper silicon layer, a lower silicon layer, and a silicon dioxide layer disposed between the upper silicon layer and the lower silicon layer; manufacturing a driving circuit on the outer side of the upper silicon layer, and coating an upper insulator layer; manufacturing a black matrix, an RGB optical filter and a liner opening on the outer side of the upper insulator layer, and forming a protective layer on the black matrix and the RGB optical filter; a glass cover plate and a first slide glass are sequentially fixed on the outer side of the protective layer; completely grinding the lower silicon layer to expose the silicon dioxide layer; making a via hole in the silicon dioxide layer and the insulator; manufacturing a transparent electrode and a pixel defining layer on the outer side of the exposed silicon dioxide layer; sequentially manufacturing a packaging layer, a non-transparent electrode and a light-emitting layer on the outer sides of the transparent electrode and the pixel defining layer; a second slide glass is fixed on the outer side of the luminous layer; and stripping the first slide and bonding to obtain the micro display.
Preferably, the transparent electrode and the pixel definition layer are arranged at intervals, wherein the transparent electrode is arranged between every two adjacent pixel definition layers.
Preferably, the transparent electrode is connected to one end of the via hole.
Preferably, the black matrix, the RGB filter, the protective layer and the pad opening are all covered inside by the protective layer and the insulator layer.
In addition, the invention provides a micro-display which is prepared by the preparation method of the silicon-on-insulator micro-display.
According to the technical scheme, the back plate is driven by the silicon on insulator, and the OLED-last process is realized by utilizing the light transmittance of the silicon on insulator. The method can avoid using low-temperature color light resistance in the prior light-emitting diode process, has wide material selection range and no temperature limitation in preparation, and solves the problems of film stripping caused by limited supply of color light resistance materials, small color gamut of the low-temperature light resistance, low process temperature and the like.
Additional features and advantages of the invention will be set forth in the detailed description which follows.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic diagram illustrating the structure of a microdisplay of the present invention;
fig. 2 is a schematic structural view after S101 is executed;
fig. 3 is a schematic structural view after S102 is executed;
fig. 4 is a schematic structural view after S103 is performed;
fig. 5 is a schematic structural view after S104 is performed;
fig. 6 is a schematic structural view after S105 is performed;
fig. 7 is a schematic structural view after S106 is executed;
fig. 8 is a schematic structural view after S107 is performed;
fig. 9 is a schematic structural view after S108 is performed;
fig. 10 is a schematic structural view after S109 is performed; and
FIG. 11 is a flow chart illustrating a method of fabricating a microdisplay of the invention.
Description of the reference numerals
1 upper silicon layer 2 silicon dioxide layer
3 lower silicon layer 4 insulator layer
5 drive circuit 6 protection layer
7 glass cover plate 8 first slide glass
9 Via hole 10 transparent electrode
11 pixel definition layer 12 encapsulation layer
13 opaque electrode 14 light emitting layer
15 second slide 16 cushion opening
17 black matrix, RGB filter
Detailed Description
The following detailed description of embodiments of the invention refers to the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating the present invention, are given by way of illustration and explanation only, not limitation.
In the present invention, unless otherwise specified, the directional words included in the terms such as "up, down, left, right" and the like merely represent the directions of the terms in a conventional use state or are colloquially known by those skilled in the art, and should not be construed as limiting the terms.
Fig. 11 is a flowchart of a method for fabricating a silicon on insulator microdisplay according to the present invention, and as shown in fig. 11, the method for fabricating a silicon on insulator microdisplay includes:
s101, providing a silicon-on-insulator substrate, wherein the silicon-on-insulator substrate includes an upper silicon layer 1, a lower silicon layer 3, and a silicon dioxide layer 2 disposed between the upper silicon layer 1 and the lower silicon layer 3, and the manufactured silicon-on-insulator substrate is shown in fig. 2.
S102, a driving circuit 5 is formed outside the upper silicon layer 1, and an insulator layer 4 is coated thereon. As shown in fig. 3.
S103, a black matrix, an RGB filter 17 and a spacer opening 16 are formed outside the upper insulator layer 4, and a protective layer 6 is formed on the black matrix and the RGB filter. As shown in fig. 4.
And S104, sequentially fixing a glass cover plate 7 and a first slide glass 8 on the outer side of the protective layer 6. As shown in fig. 5.
And S105, completely grinding the lower silicon layer 3 to expose the silicon dioxide layer 2. As shown in fig. 6. The structure after S104 is reversed before step S105 is performed.
And S106, forming a through hole 9 on the silicon dioxide layer 2 and the insulator. As shown in fig. 7.
And S107, manufacturing a transparent electrode 10 and a pixel defining layer 11 on the outer side of the exposed silicon dioxide layer 2. As shown in fig. 8.
And S108, sequentially forming an encapsulation layer 12, an opaque electrode 1310 and a light emitting layer 14 on the outer sides of the transparent electrode 10 and the pixel defining layer 11. As shown in fig. 9.
And S109, a second carrier sheet 15 is fixed to the outer side of the light emitting layer 14. As shown in fig. 10.
And S110, stripping the first slide glass 8 and bonding to obtain the micro display. As shown in fig. 1. Before executing S110, the structure after executing S109 is turned over.
Preferably, the transparent electrode 10 and the pixel defining layer 11 are disposed at an interval, wherein the transparent electrode 10 is disposed between every two adjacent pixel defining layers 11.
Preferably, the transparent electrode 10 is connected to one end of the via hole 9.
Preferably, the protection layer 6 is matched with the insulator layer 4 to cover the black matrix, the RGB filter 17, the protection layer 6 and the pad opening 16.
In addition, the invention provides a micro-display which is prepared by the preparation method of the silicon-on-insulator micro-display.
The micro display has the same technical effect as the preparation method of the silicon-on-insulator micro display. The invention realizes the OLED-last process by utilizing the light transmittance of silicon on an insulator. The method can avoid low-temperature color light resistance used in the prior light-emitting diode process, has wider selection range of light resistance materials, is not limited by temperature in preparation, and solves the problems of film stripping and the like caused by limited supply of color light resistance materials, small color gamut of low-temperature light resistance, low process temperature and the like.
The above are merely examples of the present application and are not intended to limit the present application. Various modifications and changes may occur to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the scope of the claims of the present application.
Claims (5)
1. A preparation method of a silicon-on-insulator micro-display is characterized by comprising the following steps:
providing a silicon-on-insulator substrate, wherein the silicon-on-insulator substrate comprises an upper silicon layer, a lower silicon layer, and a silicon dioxide layer disposed between the upper silicon layer and the lower silicon layer;
manufacturing a driving circuit on the outer side of the upper silicon layer, and coating an upper insulator layer;
manufacturing a black matrix, an RGB optical filter and a liner opening on the outer side of the upper insulator layer, and forming a protective layer on the black matrix and the RGB optical filter;
a glass cover plate and a first slide glass are sequentially fixed on the outer side of the protective layer;
completely grinding the lower silicon layer to expose the silicon dioxide layer;
making a via hole in the silicon dioxide layer and the insulator;
manufacturing a transparent electrode and a pixel defining layer on the outer side of the exposed silicon dioxide layer;
sequentially manufacturing a packaging layer, a non-transparent electrode and a light-emitting layer on the outer sides of the transparent electrode and the pixel defining layer;
a second slide glass is fixed on the outer side of the luminous layer; and
and stripping the first slide and bonding to obtain the micro display.
2. The method of fabricating a silicon on insulator microdisplay of claim 1 in which the transparent electrode and pixel defining layers are spaced apart, wherein the transparent electrode is disposed between every two adjacent pixel defining layers.
3. The method of fabricating a silicon on insulator microdisplay of claim 1 in which the transparent electrode is connected to one end of the via.
4. The method of fabricating a silicon on insulator microdisplay of claim 1 in which the protective layer cooperates with the insulator layer to encapsulate the black matrix, RGB filters, protective layer and spacer openings.
5. A microdisplay fabricated using the method of fabricating a silicon-on-insulator microdisplay according to any of claims 1-4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011226097.XA CN112466911B (en) | 2020-11-05 | 2020-11-05 | Preparation method of silicon-on-insulator micro-display and micro-display |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011226097.XA CN112466911B (en) | 2020-11-05 | 2020-11-05 | Preparation method of silicon-on-insulator micro-display and micro-display |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112466911A true CN112466911A (en) | 2021-03-09 |
| CN112466911B CN112466911B (en) | 2024-03-15 |
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| Application Number | Title | Priority Date | Filing Date |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050225232A1 (en) * | 2004-04-07 | 2005-10-13 | Eastman Kodak Company | Color OLED with added color gamut pixels |
| US20060152151A1 (en) * | 2004-12-10 | 2006-07-13 | Seong-Moh Seo | Organic light emitting display with color filter layer |
| KR20080035835A (en) * | 2006-10-20 | 2008-04-24 | 삼성전자주식회사 | Display device |
| CN102543832A (en) * | 2011-12-30 | 2012-07-04 | 中国电子科技集团公司第五十五研究所 | Method for manufacturing transparent silicon-based substrate with integrated circuit (IC) device |
| CN107359262A (en) * | 2017-07-07 | 2017-11-17 | 安徽熙泰智能科技有限公司 | A kind of transparent OLED micro-display devices and preparation method thereof |
| CN110854155A (en) * | 2018-07-31 | 2020-02-28 | 三星显示有限公司 | Organic light emitting diode display device and method of manufacturing the same |
-
2020
- 2020-11-05 CN CN202011226097.XA patent/CN112466911B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050225232A1 (en) * | 2004-04-07 | 2005-10-13 | Eastman Kodak Company | Color OLED with added color gamut pixels |
| US20060152151A1 (en) * | 2004-12-10 | 2006-07-13 | Seong-Moh Seo | Organic light emitting display with color filter layer |
| KR20080035835A (en) * | 2006-10-20 | 2008-04-24 | 삼성전자주식회사 | Display device |
| CN102543832A (en) * | 2011-12-30 | 2012-07-04 | 中国电子科技集团公司第五十五研究所 | Method for manufacturing transparent silicon-based substrate with integrated circuit (IC) device |
| CN107359262A (en) * | 2017-07-07 | 2017-11-17 | 安徽熙泰智能科技有限公司 | A kind of transparent OLED micro-display devices and preparation method thereof |
| CN110854155A (en) * | 2018-07-31 | 2020-02-28 | 三星显示有限公司 | Organic light emitting diode display device and method of manufacturing the same |
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| Publication number | Publication date |
|---|---|
| CN112466911B (en) | 2024-03-15 |
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