CN112466242B - Grid driving device based on single output channel driving IC - Google Patents
Grid driving device based on single output channel driving IC Download PDFInfo
- Publication number
- CN112466242B CN112466242B CN201910844361.7A CN201910844361A CN112466242B CN 112466242 B CN112466242 B CN 112466242B CN 201910844361 A CN201910844361 A CN 201910844361A CN 112466242 B CN112466242 B CN 112466242B
- Authority
- CN
- China
- Prior art keywords
- circuit
- port
- gate
- driving
- gallium nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0264—Details of driving circuits
- G09G2310/0267—Details of drivers for scan electrodes, other than drivers for liquid crystal, plasma or OLED displays
Abstract
The invention provides a grid driving device based on a single-output channel driving IC, which comprises: the single output channel driving IC, the voltage stabilizing circuit, the stabilizing circuit and the driving circuit; the output port of the single-output-channel drive IC is connected with the first port of the voltage stabilizing circuit, the second port of the voltage stabilizing circuit is respectively connected with the first port of the stabilizing circuit and the first port of the drive circuit, the second port of the stabilizing circuit and the second port of the drive circuit are both connected with the grid electrode of the P-type gallium nitride device, and the grounding port of the single-output-channel drive IC and the source electrode of the P-type gallium nitride device are both grounded. The invention can improve the reliability of the P-GaN grid.
Description
Technical Field
The invention relates to the technical field of semiconductor devices, in particular to a grid driving device based on a single-output channel driving IC.
Background
Compared with Si materials, the GaN wide bandgap semiconductor material has superior performances such as high breakdown electric field (up to 3MV/cm), high saturated electron drift velocity, good thermal conductivity and the like, and is suitable for manufacturing power devices applied to high frequency and high power.
The GaN material has stronger polarization effect, and two-dimensional electron gas (2DEG) with high concentration and high electron mobility about 1013cm & lt-2 & gt is formed at the interface of the AlGaN/GaN heterojunction growing in the polarization direction due to the polarization effect, so that the AlGaN/GaN Heterojunction Field Effect Transistors (HFETs) have extremely low on-resistance and are very suitable for manufacturing power switching devices. Therefore, the fabrication of high-performance normally-off power switching devices using GaN heterostructures with 2DEG is an important issue for achieving the practical application of GaN power switching devices.
The enhanced GaN power switch device is generally realized by two process approaches of P-GaN and concave grid. The threshold voltage of the P-GaN enhanced GaN power switch device can only reach about 1.5v, the gate voltage swing is small, and the reliability is poor.
Disclosure of Invention
The invention provides a grid driving device based on a single-output channel driving IC (integrated circuit), and aims to solve the problems that an enhanced P-GaN power switch device is low in threshold voltage, a grid cannot resist negative voltage impact and is poor in reliability.
In order to achieve the above object, an embodiment of the present invention provides a gate driving device based on a single output channel driving IC, including: the single output channel driving IC, the voltage stabilizing circuit, the stabilizing circuit and the driving circuit;
the output port of the single-output-channel drive IC is connected with the first port of the voltage stabilizing circuit, the second port of the voltage stabilizing circuit is respectively connected with the first port of the stabilizing circuit and the first port of the drive circuit, the second port of the stabilizing circuit and the second port of the drive circuit are both connected with the grid electrode of the P-type gallium nitride device, and the grounding port of the single-output-channel drive IC and the source electrode of the P-type gallium nitride device are both grounded.
The grid driving device further comprises a turn-on circuit and a turn-off circuit;
the first port of the conducting circuit is connected with the output port of the single-output-channel drive IC, the second port of the conducting circuit is respectively connected with the first port of the stabilizing circuit and the first port of the drive circuit, the conducting circuit is connected with the closing circuit in parallel, the closing circuit is connected with the voltage stabilizing circuit in series, and the closing circuit is respectively connected with the stabilizing circuit and the drive circuit in series.
The conducting circuit comprises a first diode and an on-resistor which are connected in series, and the cathode of the first diode points to the grid electrode of the P-type gallium nitride device.
Wherein the turn-off circuit comprises a second diode and a turn-off resistor connected in series, an anode of the second diode pointing to a gate of the P-type gallium nitride device.
The voltage stabilizing circuit comprises a first voltage stabilizing tube, and the cathode of the first voltage stabilizing tube points to the grid electrode of the P-type gallium nitride device.
The grid driving device further comprises a consumption circuit, a first port of the consumption circuit is respectively connected with the grid of the P-type gallium nitride device, a second port of the stabilizing circuit and a second port of the driving circuit, and a second port of the consumption circuit is connected with the source of the P-type gallium nitride device.
The consumption circuit comprises a third diode and a second voltage-regulator tube which are connected in series, wherein the cathode of the third diode points to the grid electrode of the P-type gallium nitride device, and the anode of the second voltage-regulator tube points to the grid electrode of the P-type gallium nitride device.
Wherein the stabilization circuit includes a first stabilization resistor.
Wherein the stabilization circuit further comprises: and the third voltage-stabilizing tube is connected with the second stabilizing resistor in series, and the anode of the third voltage-stabilizing tube points to the grid electrode of the P-type gallium nitride device.
Wherein the driving circuit comprises a driving capacitor.
The scheme of the invention has at least the following beneficial effects:
in the embodiment of the invention, when the single output channel drives the IC to output high level, instantaneous large current is generated by the driving circuit, the grid electrode of the P-type gallium nitride device is charged to be started, and smaller current flows into the grid electrode of the P-type gallium nitride device through the stabilizing circuit to maintain the P-type gallium nitride device in a conducting state; when the single output channel drives the IC to output a low level, the potential at the first port of the driving circuit is pulled to a certain value through the voltage stabilizing circuit, a certain negative potential is generated at the second port of the driving circuit, the conducted P-type gallium nitride device is closed, the electric charge of the driving circuit is slowly released by the stabilizing circuit, the negative voltage at the second port of the driving circuit is slowly increased, a large and continuous and stable negative voltage is generated in a short time and is kept in a state of being less than 0 for a long time, the negative voltage can inhibit mistaken opening after the disconnection due to low P-GaN threshold voltage, in addition, the reverse breakdown of a P-GaN grid is not easily caused by the large negative voltage, and the reliability of the grid is improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required to be used in the description of the embodiments of the present invention will be briefly introduced below, and it is obvious that the drawings in the description below are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without inventive labor.
FIG. 1 is a schematic structural diagram of a gate driving device based on a single output channel driving IC according to an embodiment of the present invention;
FIG. 2 is a diagram illustrating a first specific implementation structure of a gate driving device based on a single output channel driving IC according to an embodiment of the present invention;
FIG. 3 is a diagram illustrating a second specific implementation structure of a gate driving device based on a single output channel driver IC according to an embodiment of the present invention;
FIG. 4 is a diagram illustrating a third exemplary implementation structure of a gate driving apparatus based on a single output channel driving IC according to an embodiment of the present invention;
fig. 5 is a diagram illustrating a fourth specific implementation structure of a gate driving device based on a single output channel driving IC according to an embodiment of the present invention.
[ instruction of reference ]
1. A single output channel drive IC; 2. a voltage stabilizing circuit; 3. a stabilization circuit; 4. a drive circuit; 5. a P-type gallium nitride device.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, not all, embodiments of the present invention. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or to implicitly indicate the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
As shown in fig. 1, an embodiment of the present invention provides a gate driving device based on a single output channel driving IC, including: the single output channel drive IC1, the voltage stabilizing circuit 2, the stabilizing circuit 3 and the drive circuit 4.
An output port of the single-output channel driver IC1 is connected to a first port of the voltage regulator circuit 2, a second port of the voltage regulator circuit 2 is connected to a first port of the stabilizer circuit 3 and a first port of the driver circuit 4, a second port of the stabilizer circuit 3 and a second port of the driver circuit 4 are both connected to a gate of the P-type gallium nitride device 5, and a ground port of the single-output channel driver IC1 and a source of the P-type gallium nitride device 5 are both grounded.
In the embodiment of the present invention, the single output channel driving IC1 can output a high level VDD and a low level 0 respectively. In addition, in the embodiment of the present invention, the source of the P-type gan device 5 may be grounded separately or may be grounded together with the single output channel driver IC 1.
It should be noted that, in the embodiment of the present invention, when the single output channel driver IC1 outputs the high level VDD, the potential at the second port of the voltage regulator circuit 2 is VDD, the driver circuit 4 generates an instantaneous large current to charge the gate of the P-type gallium nitride device 5 to turn on the gate, and the stabilization circuit 3 stabilizes the gate of the P-type gallium nitride device 5 to flow a small current to maintain the P-type gallium nitride device 5 in the on state; when the single output channel driving IC1 outputs a low level 0, the voltage stabilizing circuit 2 pulls the potential at the first port of the driving circuit 4 to a certain value, the second port of the driving circuit 4 generates a certain negative potential, and the turned-on P-type GaN device 5 is turned off, at this time, the stabilizing circuit 3 stabilizes the slow release of the charge of the driving circuit 4, the negative voltage at the second port of the driving circuit 4 increases slowly, a large and continuous stable negative voltage is generated in a short time, and the state of less than 0 is maintained for a long time, and this negative voltage can inhibit the false turn-on after turn-off due to a low P-GaN threshold voltage, and in addition, the large negative voltage is not easy to cause the reverse breakdown of the P-GaN gate, thereby improving the reliability of the gate.
Next, each circuit included in the gate driving device will be described in detail with reference to fig. 2 to 5.
Among them, in the practice of the present inventionIn an embodiment, as shown in fig. 2 to 5, the regulator circuit includes a first voltage regulator (i.e., Z1 in fig. 2 to 5), and a cathode of the first voltage regulator is directed to a gate of the P-type gallium nitride device. Wherein, the regulated voltage value U of the first voltage-regulator tube Z1 Is not 0 nor VDD. It will be appreciated that in embodiments of the invention, Z1 may be formed from smaller voltage regulators connected in series, parallel, or series-parallel.
In the embodiment of the present invention, as shown in fig. 2 to 5, the driving circuit includes a driving capacitor (i.e., C1 in fig. 2 to 5), and in the embodiment of the present invention, the driving capacitor is preferably a high-frequency patch capacitor for easy installation.
In the embodiment of the present invention, there are two specific implementation structures of the above stabilizing circuit. As shown in fig. 2 to 3, in the first specific implementation structure, the stabilizing circuit includes a first stabilizing resistor (i.e., R3 in fig. 2 to 3), which is generally a large resistor to stabilize the gate of the P-type gan device flowing a small current when the single output channel drives the IC to output at a high level; and when the single output channel drives the IC to output at low level, the charges of the stable driving circuit are slowly released, and the grid is maintained for a certain negative voltage time. As shown in fig. 4 to 5, in a second specific implementation structure, the stabilizing circuit further includes a third regulator (i.e., Z2 in fig. 4 to 5) and a second stabilizing resistor (i.e., R4 in fig. 4 to 5) connected in parallel with the first stabilizing resistor, in addition to the first stabilizing resistor (i.e., R3 in fig. 4 to 5), and the third regulator is connected in series with the second stabilizing resistor, and an anode of the third regulator is directed to the gate of the P-type gallium nitride device. It will of course be appreciated that the third mentioned voltage regulator tube may be formed from smaller voltage regulator tubes connected in series, in parallel or in series and parallel.
In an embodiment of the present invention, to further improve the gate reliability of the P-type gallium nitride device, the gate driving apparatus further includes a consumption circuit, a first port of the consumption circuit is connected to the gate of the P-type gallium nitride device, a second port of the stabilization circuit, and a second port of the driving circuit, respectively, and a second port of the consumption circuit is connected to the source of the P-type gallium nitride device.
Specifically, as shown in fig. 2 to 5, the consumption circuit includes a third diode (i.e., D3 in fig. 2 to 5) and a second voltage regulator (i.e., Z2 in fig. 2 to 3 and Z3 in fig. 4 to 5) connected in series, a cathode of the third diode is directed to the gate of the P-type gallium nitride device, and an anode of the second voltage regulator is directed to the gate of the P-type gallium nitride device. It will be appreciated that in embodiments of the invention the second regulator tube may be formed from smaller regulator tubes connected in series, parallel or series-parallel.
In an embodiment of the present invention, in order to enhance compatibility with a single output channel driver IC, the gate driving device further includes a turn-on circuit and a turn-off circuit. The first port of the conducting circuit is connected with the output port of the single-output-channel drive IC, the second port of the conducting circuit is respectively connected with the first port of the stabilizing circuit and the first port of the drive circuit, the conducting circuit is connected with the closing circuit in parallel, the closing circuit is connected with the voltage stabilizing circuit in series, and the closing circuit is respectively connected with the stabilizing circuit and the drive circuit in series.
Specifically, the turn-on circuit includes a first diode (i.e., D1 in fig. 2 and 4) and an on-resistance (i.e., R1 in fig. 2 and 4) connected in series, a cathode of the first diode pointing to a gate of the P-type gallium nitride device; the turn-off circuit includes a second diode (i.e., D2 in fig. 2 and 4) and a turn-off resistor (i.e., R2 in fig. 2 and 4) connected in series, the anode of the second diode pointing to the gate of the P-type gallium nitride device. It will be appreciated that the turn-on circuit may also include other resistors in series with D1 and R1.
In the embodiment of the invention, the positions of the first diode and the on-resistor can be interchanged, and the positions of the second diode, the off-resistor and the first voltage regulator tube can be interchanged. It should be noted that, because the driving capability of the single-output channel driving IC is different, the on-resistance R1 and the off-resistance R2 need to be flexibly changed, and generally R1 and R2 are not the same, and the implantation of D1 and D2 can ensure the independent use of the on-resistance R1 and the off-resistance R2, thereby enhancing the compatibility of the single-output channel driving IC.
Wherein, the D1 and D2 are diodes with controlled lifetime of majority or minority carriers; r1 is selected according to the requirements of driving capability and switching characteristics, and can be 0 or a conducting wire at minimum; r2 is also selected according to the driving capability and the requirement of the switch characteristic, and the minimum can be 0 or a conducting wire. When R1 and R2 are conductive lines, D1 and D2 can be omitted, and the structure of the gate driving device based on the single output channel driving IC is shown in fig. 3 and 5.
It is understood that, in the embodiment of the present invention, in practical applications, the gate driving apparatus may be directly integrated into the single output channel driving IC.
Next, the operation principle of four different implementation structures of the gate driving device will be described in detail.
For the two implementation structures of fig. 2 and fig. 3, when the single-output channel driving IC outputs high-level VDD, the potential at the cathode of Z1 is VDD, the single-output channel driving IC converts into a large current through C1 to turn on the P-type gallium nitride device, converts into a small current through R3 to keep on, and no current passes through D3 and Z2 connected in series; when the single output channel drives the IC to output 0 at low level, the grid of the P-type gallium nitride device is pulled to negative potential instantly and is turned off, and the potential at the cathode of the voltage regulator tube Z1 is a constant value U within a certain time due to the existence of the voltage regulator tube Z1 Z1 The charge stored in C1 is consumed by R3, the charge of stable C1 is slowly released, the grid is maintained for a certain negative pressure time, simultaneously, current passes through the D3 and the Z2 which are connected in series, and under the action of Z1 and Z2, the grid potential of the P-type gallium nitride device is stabilized to be greater than- (VDD-U) within a certain time Z1 -V GSF ) And less than 0, V GSF The saturation voltage of the parasitic diode of the P-type gallium nitride device is divided, the grid electrode of the P-type gallium nitride device can be prevented from being broken down by negative voltage with undersize reverse direction, and due to the existence of the negative voltage, the anti-Interference capability on Electromagnetic Interference (EMI) is good, the grid electrode is prevented from being turned on by mistake after being turned off, and the effect of improving the grid electrode reliability of the P-type gallium nitride device is achieved. In addition, the air conditioner is provided with a fan,the positions of D3 and Z2 can be interchanged, D3 and Z2 between the grid and the source of the P-type gallium nitride device can be connected with a proper amount of resistors in series, so that heat generated in the high-frequency switching process is effectively dissipated, a certain positive voltage is generated by a parasitic inductance of the source at the moment of turning off the P-type gallium nitride device, a grid parasitic diode of the P-type gallium nitride device can bear a large reverse voltage, the P-type gallium nitride device is in a breakdown risk, the voltage can be converted into heat to be dissipated by Z2, D3 and the series resistors of the P-type gallium nitride device, and the reliability of the grid of the P-type gallium nitride device is further improved. Where Q1 in fig. 2 to 3 denotes a P-type gallium nitride device, and GND denotes a ground.
For the two implementation structures shown in fig. 4 and 5, when the single-output channel driver IC outputs the high-level VDD, the high-level VDD of the single-output channel driver IC generates an instantaneous large current through D1, R1, and C1 (it can be understood that, if the implementation structure shown in fig. 5 is used, the high-level VDD of the single-output channel driver IC directly generates an instantaneous large current through C1), the gate of the P-GaN is charged to turn on the P-GaN, and after stabilization, the Z2 and R4 connected in series are connected in parallel with R3 to flow a small current, so as to maintain the P-GaN in a conducting state, and at the same time, the C1 is charged; when the single output channel driving IC outputs low level 0, the left potential of C1 is pulled to U through D2, Z1 and R2 Z1 Nearby (it will be understood that, in the case of the implementation of FIG. 5, the potential at the left side of C1 is pulled to U directly through Z1 Z1 Nearby), a certain negative potential is generated on the right side of the C1, the conducting P-GaN is closed, and the negative potential on the right side of the C1 is more than or equal to- (VDD C1/(C1+ C) P-GaN )-V GSF -U Z1 )，V GSF The voltage value of the P-GaN parasitic diode is shown in the formula, wherein C1 represents the capacitance of the driving capacitor C1, and the voltage across C1 is less than or equal to VDD C1/(C1+ C) P-GaN )-V GSF The value is gradually smaller than the voltage stabilizing value of a voltage stabilizing tube Z2, the voltage stabilizing tube Z2 is gradually opened, the resistance at the two ends of C1 is gradually increased to R3, so that the discharge of C1 is slowly reduced, the negative voltage at the right side of C1 is slowly increased, a large and continuous and stable negative voltage is generated in a short time, and the state of being less than 0 is kept for a long time, the negative voltage can inhibit the false turn-on after turn-off due to the low P-GaN threshold voltage, and in addition, the reverse breakdown of a P-GaN grid is not easily caused by the large negative voltage, so that the reliability of the grid is improved; the parasitic inductance is easy to be in the moment of P-GaN switching offA positive potential is generated near the source electrode, and a negative potential at the C1 position generates a larger reverse voltage, so that a P-GaN grid electrode is subjected to reverse breakdown, the grid electrode and the source electrode of the P-GaN are connected in series through the D3 and the Z3, and the D3 and the Z3 can be connected in series with a proper amount of large resistors at the same time, so that the reverse voltage can be consumed in a thermal mode, and the reliability of the P-GaN device in the switching process is further improved. Where Q1 in fig. 4 to 5 denotes a P-type gallium nitride device, and GND denotes a ground line.
The above-mentioned embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the same; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not substantially depart from the spirit and scope of the embodiments of the present invention, and are intended to be included within the scope of the present invention.
Claims (9)
1. A gate driving device based on a single output channel driving IC, comprising: the single output channel driving IC, the voltage stabilizing circuit, the stabilizing circuit and the driving circuit;
the output port of the single-output-channel drive IC is connected with the first port of the voltage stabilizing circuit, the second port of the voltage stabilizing circuit is respectively connected with the first port of the stabilizing circuit and the first port of the drive circuit, the second port of the stabilizing circuit and the second port of the drive circuit are both connected with the grid electrode of the P-type gallium nitride device, and the grounding port of the single-output-channel drive IC and the source electrode of the P-type gallium nitride device are both grounded;
the grid driving device further comprises a conducting circuit and a closing circuit;
the first port of the conducting circuit is connected with the output port of the single-output-channel drive IC, the second port of the conducting circuit is respectively connected with the first port of the stabilizing circuit and the first port of the drive circuit, the conducting circuit is connected with the closing circuit in parallel, the closing circuit is connected with the voltage stabilizing circuit in series, and the closing circuit is respectively connected with the stabilizing circuit and the drive circuit in series.
2. A gate drive apparatus as claimed in claim 1, wherein the turn-on circuit comprises a first diode and an on-resistance connected in series, a cathode of the first diode being directed to a gate of the P-type gallium nitride device.
3. A gate drive apparatus as claimed in claim 1, wherein the turn-off circuit comprises a second diode and a turn-off resistor connected in series, the anode of the second diode being directed to the gate of the P-type gallium nitride device.
4. The gate driving apparatus of claim 1, wherein the voltage regulator circuit comprises a first voltage regulator tube, and a cathode of the first voltage regulator tube is directed to a gate of the P-type gallium nitride device.
5. The gate driving apparatus according to claim 1, further comprising a consumption circuit, wherein a first port of the consumption circuit is connected to the gate of the P-type gallium nitride device, a second port of the stabilization circuit, and a second port of the driving circuit, respectively, and a second port of the consumption circuit is connected to the source of the P-type gallium nitride device.
6. A gate drive arrangement as claimed in claim 5, wherein the depletion circuit comprises a third diode and a second regulator tube connected in series, the cathode of the third diode being directed towards the gate of the P-type GaN device and the anode of the second regulator tube being directed towards the gate of the P-type GaN device.
7. A gate drive apparatus as claimed in claim 1, wherein the stabilizing circuit comprises a first stabilizing resistor.
8. The gate driving apparatus of claim 7, wherein the stabilization circuit further comprises: and the third voltage-stabilizing tube is connected with the second stabilizing resistor in series, and the anode of the third voltage-stabilizing tube points to the grid electrode of the P-type gallium nitride device.
9. A gate drive device as claimed in claim 1, wherein the drive circuit comprises a drive capacitor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910844361.7A CN112466242B (en) | 2019-09-06 | 2019-09-06 | Grid driving device based on single output channel driving IC |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910844361.7A CN112466242B (en) | 2019-09-06 | 2019-09-06 | Grid driving device based on single output channel driving IC |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112466242A CN112466242A (en) | 2021-03-09 |
| CN112466242B true CN112466242B (en) | 2022-08-02 |
Family
ID=74807228
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910844361.7A Active CN112466242B (en) | 2019-09-06 | 2019-09-06 | Grid driving device based on single output channel driving IC |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112466242B (en) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101510722B (en) * | 2009-03-12 | 2012-01-04 | 上海交通大学 | Grid-proof driving signal oscillation circuit |
| CN203788130U (en) * | 2014-04-25 | 2014-08-20 | 西安科技大学 | Enhancement-depletion-type device combination synchronization switch circuit |
| US10348286B2 (en) * | 2016-07-06 | 2019-07-09 | Delta Electronics, Inc. | Waveform conversion circuit for gate driver |
| CN206164350U (en) * | 2016-10-20 | 2017-05-10 | 广州视源电子科技股份有限公司 | Drive circuit of switch tube |
| CN208608890U (en) * | 2018-06-07 | 2019-03-15 | 泉芯电子技术(深圳)有限公司 | High pressure gate driving circuit, floating ground driving circuit and high pressure grid source electrode drive circuit |
| CN112468119B (en) * | 2019-09-06 | 2022-08-23 | 深圳芯能半导体技术有限公司 | Driving device of P-type gallium nitride device |
-
2019
- 2019-09-06 CN CN201910844361.7A patent/CN112466242B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN112466242A (en) | 2021-03-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP4220702A1 (en) | Depletion mode iii-nitride semiconductor based device with gate islands | |
| JP5592598B2 (en) | Gate driver for wide band gap semiconductor devices | |
| US8710543B2 (en) | Cascode circuit device with improved reverse recovery characteristic | |
| US20120292635A1 (en) | Composite semiconductor device | |
| US11955478B2 (en) | Power semiconductor device with an auxiliary gate structure | |
| US20140091852A1 (en) | Switch Circuit with a First Transistor Device and a Second Transistor Device Connected in Series | |
| US11257811B2 (en) | Power semiconductor device with an auxiliary gate structure | |
| US9912332B2 (en) | Semiconductor device | |
| CN104518648A (en) | Method and system for operating gallium nitride electronics | |
| CN105264774B (en) | The protection circuit of semiconductor device | |
| US20160248422A1 (en) | Switching circuit, semiconductor switching arrangement and method | |
| CN111865053A (en) | Negative-pressure turn-off driving circuit based on wide-bandgap power device | |
| CN111049100B (en) | Bootstrap circuit with clamping function | |
| US20140021934A1 (en) | Devices and components for power conversion circuits | |
| CN112466242B (en) | Grid driving device based on single output channel driving IC | |
| CN112468119B (en) | Driving device of P-type gallium nitride device | |
| EP3522374B1 (en) | A switch circuit, corresponding device and method | |
| CN112466241B (en) | Grid driving device based on dual-output channel driving IC | |
| JP2018049950A (en) | Semiconductor device and method of controlling the same | |
| CN115314038A (en) | Gate-level buffer circuit based on SiC power device | |
| CN216490435U (en) | Monolithic integrated gallium nitride chip | |
| US20230131602A1 (en) | Power semiconductor device with an auxiliary gate structure | |
| CN216215869U (en) | DC power supply reverse connection protection circuit | |
| CN216873068U (en) | Driving and current detection circuit of D-Mode gallium nitride power tube easy to integrate | |
| TWI839514B (en) | A power semiconductor device with an auxiliary gate structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |