CN112462470A - Method for manufacturing silicon-based photonic device by side wall transfer and silicon-based photonic device - Google Patents
Method for manufacturing silicon-based photonic device by side wall transfer and silicon-based photonic device Download PDFInfo
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- CN112462470A CN112462470A CN202011167383.3A CN202011167383A CN112462470A CN 112462470 A CN112462470 A CN 112462470A CN 202011167383 A CN202011167383 A CN 202011167383A CN 112462470 A CN112462470 A CN 112462470A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12038—Glass (SiO2 based materials)
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12107—Grating
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12166—Manufacturing methods
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12166—Manufacturing methods
- G02B2006/12176—Etching
Abstract
The invention provides a method for manufacturing a silicon-based photonic device by using side wall transfer and the silicon-based photonic device, wherein the method comprises the following steps: providing a silicon-on-insulator substrate; depositing at least one etching stop layer on the silicon-on-insulator substrate; forming a groove on the etching stop layer; depositing a first side wall material to form first side walls on two sides of the groove; removing the etching stop layers on the two sides of the first side wall; depositing a second side wall material to form second side walls on two sides of the first side wall; etching to remove the first side wall; and etching the silicon substrate on the insulator by taking the second side wall as a photoetching mask. The method adopts a multiple side wall transfer method to form a grating structure with good steepness and can far exceed the line width precision of a photoetching machine.
Description
Technical Field
The invention relates to the technical field of silicon-based photonic devices, in particular to a method for manufacturing a silicon-based photonic device by using side wall transfer and the silicon-based photonic device.
Background
Some designs in silicon-based photonic devices require line widths that are small, exceeding the power range of step-and-projection (stepper) or step-and-scan (scanner) lithography, and writing with electron beam lithography is inefficient.
Disclosure of Invention
The invention mainly aims to provide a method for manufacturing a silicon-based photonic device by using side wall transfer and the silicon-based photonic device.
To achieve the above objects, according to a first aspect of the present invention, there is provided a method for fabricating a silicon-based photonic device using sidewall transfer.
The method for manufacturing the silicon-based photonic device by using the side wall transfer comprises the following steps:
providing a silicon-on-insulator (SOI) substrate;
depositing at least one etch stop layer on the silicon-on-insulator (SOI) substrate;
forming a groove on the etching stop layer;
depositing a first side wall material to form first side walls on two sides of the groove;
removing the etching stop layers on the two sides of the first side wall;
depositing a second side wall material to form second side walls on two sides of the first side wall;
etching to remove the first side wall;
and etching the silicon-on-insulator (SOI) substrate by taking the second side wall as a photoetching mask.
Further, the silicon-on-insulator (SOI) substrate includes a support substrate, a buried oxide layer (BOX layer) on the support substrate, and a silicon layer on the buried oxide layer.
Further, depositing an oxide layer and an etching stop layer on the silicon-on-insulator (SOI) substrate in sequence; then, etching the etching stop layer by adopting a photoetching process to form the groove; wherein the material of the oxide layer is silicon oxide; the material of the etching stop layer is amorphous silicon (alpha-Si).
Further, depositing a first sidewall material to form a first sidewall on both sides of the recess includes:
covering the groove and depositing a first side wall material to form a first side wall layer;
and etching the first side wall layer by adopting a dry etching process so as to form the first side wall on two sides of the groove.
Further, the first side wall material is silicon nitride.
Further, removing the etching stop layer by adopting a wet etching process to expose two side surfaces of the first side wall to form a patterned first side wall; the wet etching process adopts a tetramethylammonium hydroxide (TMAH) solution.
Further, depositing a second sidewall material to form second sidewalls on both sides of the first sidewall includes:
covering the first side wall and depositing a second side wall material to form a second side wall layer;
and etching the second side wall layer by adopting a dry etching process so as to form the second side walls on two sides of the first side wall.
Further, the second side wall material is silicon dioxide.
Further, removing the first side wall by adopting a wet etching process to expose two side surfaces of the second side wall to form a patterned second side wall; wherein, the wet etching process adopts hot phosphoric acid solution.
To achieve the above object, according to a second aspect of the present invention, there is provided a silicon-based photonic device.
The silicon-based photonic device is prepared according to the method for manufacturing the silicon-based photonic device by using the side wall transfer.
In the embodiment of the invention, the line width of the grating structure is distributed in equal proportion or unequal proportion by utilizing a multiple side wall transfer method, so that the grating structure which is far smaller than the photoetching precision is realized.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to refer to like parts throughout the drawings. In the drawings:
fig. 1a to 1i are schematic flow charts of a method for manufacturing a silicon-based photonic device by using sidewall transfer according to an embodiment of the present invention.
In the figure:
1. an SOI substrate; 2. a groove; 3. a first side wall; 4. a second side wall;
100. a support substrate; 200. a buried oxide layer; 300. a silicon layer; 400. an oxide layer; 500. etching the stop layer; 600. a first sidewall layer; 700. and a second side wall layer.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
The invention discloses a method for manufacturing a silicon-based photonic device by using side wall transfer, which comprises the following steps:
a silicon-on-insulator (SOI) substrate 1 is provided, and as shown with reference to fig. 1a, the SOI substrate 1 includes a support substrate 100, a buried oxide layer 200(BOX layer) on the support substrate 100, and a single crystal silicon layer 300 on the BOX layer 200.
Note that the support substrate 100 is a Si substrate, and in the embodiment of the present invention, the thickness of the BOX layer 200 on the Si substrate is 3 μm, and the thickness of the single crystal silicon layer 300 on the BOX layer 200 is 220 nm. Of course, those skilled in the art can set the thickness of the BOX layer 200 and the single crystal silicon layer 300 according to actual needs.
With continued reference to fig. 1a, an etch stop layer 500 is deposited on the single crystal silicon layer 300 of the SOI substrate 1. In an embodiment of the present invention, the material of the etch stop layer 500 may be amorphous silicon (α -Si), and the thickness of the etch stop layer 500 is 220 nm.
Of course, in order to protect the SOI substrate 1 from damage to the single crystal silicon layer 300 located on the top layer, an oxide layer 400 may be deposited before the etch stop layer 500 is deposited, as desired. In an embodiment of the present invention, the material of the oxide layer 400 may be silicon oxide.
With continued reference to fig. 1a, the etch stop layer 500 is etched using a photolithographic process to form the recess 2. It should be noted that the grooves 2 are defined grooves, and the number and the forming size of the grooves 2 can be selected according to actual needs, and of course, a person skilled in the art can also form the defined silicon grooves by using conventional deposition and etching processes.
Referring to fig. 1b, a first sidewall layer 600 is formed by depositing a first sidewall material covering the recess 2, including the opposite sides and the bottom side in the recess 2, and the etch stop layer 500. In an embodiment of the present invention, the first sidewall material may be silicon nitride.
The first sidewall layer 600 is etched by a dry etching process to form first sidewalls 3 covering opposite sides in the recess 2, as shown with reference to fig. 1 c.
It should be noted that the first sidewall 3 can be formed by a conventional dry etching process by those skilled in the art.
Referring to fig. 1d, the etching stop layer 500 is removed by a wet etching process, so that two side surfaces of the first sidewall 3 are exposed, and the patterned first sidewall 3 is formed. In the embodiment of the present invention, a tetramethylammonium hydroxide (TMAH) solution is used in the wet etching process to remove the etch stop layer 500.
Referring to fig. 1e, a second layer of sidewall material is deposited to cover the first sidewall 3, including the top side and the opposite sides of the first sidewall 3, to form a second sidewall layer 700. In an embodiment of the present invention, the material of the second sidewall layer 700 may be silicon dioxide.
The second sidewall layer 700 is etched using a dry etching process to form second sidewalls 4 covering opposite sides of the first sidewalls 3, as shown with reference to fig. 1 f.
It should be noted that the second sidewalls 4 can be formed by a conventional dry etching process by those skilled in the art.
And removing the first side wall 3 by using a wet etching process to expose two side surfaces of the second side wall 4 to form the patterned second side wall 4, which is shown in fig. 1 g. In the embodiment of the present invention, a wet etching process is performed using a hot phosphoric acid solution to obtain the patterned second sidewall 4.
It should be noted that, when the first sidewall 3 is wet-etched by using a hot phosphoric acid solution, a part of the oxide layer 400 may be removed by those skilled in the art.
Referring to fig. 1h, the silicon layer 300 is etched by using the second sidewall 4 as a mask to form a grating structure on the SOI substrate 1.
It is noted that the silicon layer 300 is etched by a conventional photolithography process by those skilled in the art to obtain the grating structure.
The oxide layer 400 and the patterned second sidewall 4 are removed by a conventional etching process to obtain a silicon-based photonic device with a grating structure, as shown in fig. 1 i.
In the embodiment of the invention, the area in the groove 2 with the size of 200nm can be divided into 5 parts, as shown in fig. 1i, the line width can be distributed in equal proportion, the minimum size is 40nm, and the realization precision is far less than that of a 200nm photoetching machine. Of course, the line widths may be distributed in unequal proportions depending on the thickness of the first sidewall 3, and the first sidewall 3 may be formed by a Chemical Vapor Deposition (CVD) or Atomic Layer Deposition (ALD) process.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (10)
1. A method for manufacturing a silicon-based photonic device by using side wall transfer is characterized by comprising the following steps:
providing a silicon-on-insulator (SOI) substrate;
depositing at least one etch stop layer on the silicon-on-insulator (SOI) substrate;
forming a groove on the etching stop layer;
depositing a first side wall material to form first side walls on two sides of the groove;
removing the etching stop layers on the two sides of the first side wall;
depositing a second side wall material to form second side walls on two sides of the first side wall;
etching to remove the first side wall;
and etching the silicon-on-insulator (SOI) substrate by taking the second side wall as a photoetching mask.
2. The method of fabricating a silicon-based photonic device using sidewall spacer transfer as claimed in claim 1, wherein the silicon-on-insulator (SOI) substrate comprises a support substrate, a buried oxide layer (BOX layer) on the support substrate, and a silicon layer on the buried oxide layer.
3. The method of fabricating silicon-based photonic devices using sidewall transfer as claimed in claim 1, wherein an oxide layer and an etch stop layer are sequentially deposited on the silicon-on-insulator (SOI) substrate; then, etching the etching stop layer by adopting a photoetching process to form the groove; wherein the material of the oxide layer is silicon oxide; the material of the etching stop layer is amorphous silicon (alpha-Si).
4. The method of claim 1, wherein depositing a first sidewall material to form a first sidewall on both sides of the recess comprises:
covering the groove and depositing a first side wall material to form a first side wall layer;
and etching the first side wall layer by adopting a dry etching process so as to form the first side wall on two sides of the groove.
5. The method for fabricating a silicon-based photonic device using sidewall transfer as claimed in claim 1 or 4, wherein the first sidewall material is silicon nitride.
6. The method for fabricating a silicon-based photonic device using sidewall transfer as claimed in claim 1, wherein the etching stop layer is removed by wet etching process to expose both sides of the first sidewall to form a patterned first sidewall; the wet etching process adopts a tetramethylammonium hydroxide (TMAH) solution.
7. The method of claim 1, wherein depositing a second sidewall material to form a second sidewall on both sides of the first sidewall comprises:
covering the first side wall and depositing a second side wall material to form a second side wall layer;
and etching the second side wall layer by adopting a dry etching process so as to form the second side walls on two sides of the first side wall.
8. The method of fabricating a silicon-based photonic device using sidewall transfer as claimed in claim 1 or 7, wherein the second sidewall material is silicon dioxide.
9. The method of claim 1, wherein a wet etching process is used to remove the first sidewall to expose both sides of the second sidewall to form a patterned second sidewall; wherein, the wet etching process adopts hot phosphoric acid solution.
10. The silicon-based photonic device prepared by the method for manufacturing the silicon-based photonic device by using the sidewall transfer according to any one of claims 1 to 9.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011167383.3A CN112462470B (en) | 2020-10-27 | 2020-10-27 | Method for manufacturing silicon-based photonic device by side wall transfer and silicon-based photonic device |
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| CN202011167383.3A CN112462470B (en) | 2020-10-27 | 2020-10-27 | Method for manufacturing silicon-based photonic device by side wall transfer and silicon-based photonic device |
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| CN112462470B CN112462470B (en) | 2022-10-04 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103943469A (en) * | 2014-05-08 | 2014-07-23 | 上海华力微电子有限公司 | Self-aligning forming method for figure |
| CN103943468A (en) * | 2014-05-08 | 2014-07-23 | 上海华力微电子有限公司 | Self-aligning forming method for figure |
| CN108389796A (en) * | 2017-02-03 | 2018-08-10 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure and forming method thereof |
| CN109216163A (en) * | 2017-06-29 | 2019-01-15 | 中芯国际集成电路制造(上海)有限公司 | The manufacturing method of semiconductor devices |
| US20190019676A1 (en) * | 2017-07-15 | 2019-01-17 | Micromaterials Llc | Mask Scheme For Cut Pattern Flow With Enlarged EPE Window |
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2020
- 2020-10-27 CN CN202011167383.3A patent/CN112462470B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103943469A (en) * | 2014-05-08 | 2014-07-23 | 上海华力微电子有限公司 | Self-aligning forming method for figure |
| CN103943468A (en) * | 2014-05-08 | 2014-07-23 | 上海华力微电子有限公司 | Self-aligning forming method for figure |
| CN108389796A (en) * | 2017-02-03 | 2018-08-10 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure and forming method thereof |
| CN109216163A (en) * | 2017-06-29 | 2019-01-15 | 中芯国际集成电路制造(上海)有限公司 | The manufacturing method of semiconductor devices |
| US20190019676A1 (en) * | 2017-07-15 | 2019-01-17 | Micromaterials Llc | Mask Scheme For Cut Pattern Flow With Enlarged EPE Window |
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