CN112461838B - Wafer defect detection device and method - Google Patents
Wafer defect detection device and method Download PDFInfo
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- CN112461838B CN112461838B CN201910849755.1A CN201910849755A CN112461838B CN 112461838 B CN112461838 B CN 112461838B CN 201910849755 A CN201910849755 A CN 201910849755A CN 112461838 B CN112461838 B CN 112461838B
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Abstract
The invention provides a wafer defect detection device and method, wherein the wafer defect detection method comprises the following steps: providing a wafer to be detected, wherein the surface of the wafer to be detected is provided with a to-be-detected array formed by arranging a plurality of to-be-detected units line by line; providing a plurality of detection light sources, respectively scanning different rows in the array to be detected by using the plurality of detection light sources, and acquiring a scanning image of each unit to be detected; and comparing the scanned images of the units to be detected, and judging the defect condition of the units to be detected. The invention adopts a plurality of detection light sources with different wavelengths to scan the to-be-detected arrays arranged line by line in the wafer, and when the detection light sources are adopted to scan all the to-be-detected arrays synchronously, the scanning efficiency can be effectively improved; when a plurality of detection light sources are adopted to scan a single-row array to be detected in sequence, the scanning precision can be effectively improved.
Description
Technical Field
The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a wafer defect detection device and a wafer defect detection method.
Background
In a wafer manufacturing process, wafer defect inspection is an important means for improving Yield (YE). Among them, detecting wafer defects by optical scanning is a common defect detection means. Compared with other detection means such as electron microscope scanning, the method has the advantages of high detection efficiency, visual detection result, low equipment cost and the like.
Currently, optical scanning inspection generally employs a visible light source or a light source with a specific wavelength to scan a wafer. However, because the reflectivity of the same material to light sources with different wavelengths is different, when a visible light source is used for scanning, the visible light contains light with multiple wavelengths, and optical signals with different wavelengths are difficult to distinguish after being mixed, so that the scanning result is influenced; when a light source with a specific wavelength is used for scanning, the reflectivity of a single-wavelength light source to different materials on the surface of a wafer is different, and the reflection effect to some materials is not good, so that the single-wavelength light source cannot obtain a better scanning result to all materials.
Therefore, it is necessary to provide a new wafer defect detecting apparatus and method to solve the above problems.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, an object of the present invention is to provide a wafer defect detecting apparatus and method for solving the problem of poor scanning result when scanning with a visible light source or a single wavelength light source in the prior art.
To achieve the above and other related objects, the present invention provides a wafer defect detecting method, comprising the steps of:
providing a wafer to be detected, wherein the surface of the wafer to be detected is provided with an array to be detected, and the array to be detected is formed by arranging a plurality of units to be detected line by line;
providing a plurality of detection light sources, respectively scanning different rows in the array to be detected by using the plurality of detection light sources, and acquiring a scanning image of each unit to be detected;
and comparing the scanned images of the units to be detected, and judging the defect condition of the units to be detected.
As an alternative of the invention, a plurality of detection light sources are obtained by separating a mixed light source composed of lights with different wavelengths through a dispersion prism.
As an alternative of the present invention, the hybrid light source includes a visible light source, and the plurality of detection light sources are divided according to different refraction directions of the visible light after being refracted by the dispersion prism.
As an alternative of the present invention, when a plurality of detection light sources are used to respectively perform line-by-line scanning on different rows in the array to be detected, the different rows are located within an irradiation range of the visible light refracted by the dispersion prism.
As an alternative of the present invention, any row in the array to be detected is scanned by one of the detection light sources in the plurality of detection light sources; and comparing the scanned images of the units to be detected, which are scanned by the same detection light source, and judging the defect conditions of the units to be detected.
As an alternative of the present invention, any row in the array to be detected is sequentially scanned by all the detection light sources in the plurality of detection light sources; and sequentially comparing the scanned images of the units to be detected, which are scanned by the same detection light source, and judging the defect condition of the units to be detected by combining the scanning comparison results of a plurality of detection light sources.
As an alternative of the present invention, the method for comparing the scanned images comprises:
acquiring gray values of pixel points in two different scanning images;
calculating the Euclidean distance between the two scanning images according to the gray values of the corresponding pixel points in the two scanning images;
and comparing the similarity between the two scanned images according to the Euclidean distance.
As an alternative of the present invention, the gray level average value of the corresponding pixel points in all the scanned images is calculated, and a standard comparison image is formed by combining the gray level average values of the pixel points; and when the scanned image is compared, comparing the scanned image with the standard comparison image.
The invention also provides a wafer defect detection device, comprising:
the light source generating module is used for generating a plurality of detection light sources;
the image scanning module is used for scanning the units to be detected in the array to be detected on the wafer to be detected by adopting a plurality of detection light sources and acquiring the scanning images of the units to be detected;
and the image comparison module is connected with the image scanning module and used for acquiring the scanning images from the image scanning module, comparing the scanning images of the units to be detected and judging the defect conditions of the units to be detected.
As an alternative of the present invention, the light source generation module includes a visible light source and a dispersion prism.
As described above, the present invention provides a method for detecting a defect in a wafer, wherein a plurality of detection light sources with different wavelengths are used to scan to-be-detected arrays arranged line by line in the wafer, and when a plurality of detection light sources are used to scan all to-be-detected arrays synchronously, the scanning efficiency can be effectively improved; when a plurality of detection light sources are adopted to scan a single-row array to be detected in sequence, the scanning precision can be effectively improved.
Drawings
Fig. 1 is a flowchart illustrating a wafer defect detection method according to an embodiment of the invention.
Fig. 2 is a schematic diagram illustrating row-by-row arrangement of units to be detected in a wafer to be detected according to an embodiment of the present invention.
Fig. 3 is a schematic diagram illustrating that visible light provided in the first embodiment of the invention is refracted by a prism into different detection light sources.
Fig. 4 is a schematic diagram illustrating a plurality of detecting light sources scanning a wafer to be detected according to an embodiment of the present invention.
Fig. 5 is a schematic diagram illustrating a plurality of detecting light sources provided in the second embodiment of the present invention scanning a wafer to be detected.
Description of the element reference numerals
100. Wafer to be detected
101. Unit to be detected
102. Visible light source
102a visible light
102b Red light
102c orange light
102d yellow light
102e Green light
102f blue light
102g of indigo
102h purple light
103. Light splitter
104. Prism
S1-S3 Steps 1) -3)
Detailed Description
The following embodiments of the present invention are provided by specific examples, and other advantages and effects of the present invention will be readily apparent to those skilled in the art from the disclosure of the present invention. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 1 to 5. It should be noted that the drawings provided in the present embodiment are only schematic and illustrate the basic idea of the present invention, and although the drawings only show the components related to the present invention and are not drawn according to the number, shape and size of the components in actual implementation, the form, quantity and proportion of the components in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.
Example one
Referring to fig. 1 to 4, the present embodiment provides a method for detecting a wafer defect, including the following steps:
1) Providing a wafer to be detected, wherein the surface of the wafer to be detected is provided with an array to be detected, and the array to be detected is formed by arranging a plurality of units to be detected line by line;
2) Providing a plurality of detection light sources, respectively scanning different rows in the array to be detected by using the plurality of detection light sources, and acquiring a scanning image of each unit to be detected;
3) And comparing the scanned images of the units to be detected, and judging the defect condition of the units to be detected.
In step 1), please refer to step S1 and fig. 2 of fig. 1, a wafer 100 to be detected is provided, and a surface of the wafer 100 to be detected has an array to be detected formed by arranging a plurality of units 101 to be detected line by line. In fig. 2, a plurality of units 101 to be inspected are prepared on the surface of the wafer 100 to be inspected through a semiconductor process. The plurality of units to be detected 101 are sequentially arranged line by line to form the array to be detected. As shown in fig. 2, the units 101 to be detected may be arranged row by row in a transverse direction as shown by a dotted line, which is also a scanning direction of the optical scanning. It should be noted that the units 101 to be detected may also be arranged in other ways, such as orderly arrangement in the longitudinal direction.
In step 2), please refer to step S2 of fig. 1 and fig. 3 to 4, a plurality of detection light sources are provided, and the plurality of detection light sources are used to scan different rows in the array to be detected respectively and obtain the scan image of each unit to be detected. Optionally, a plurality of the detection light sources are obtained by separating a mixed light source composed of lights with different wavelengths through a dispersion prism. The mixed light source comprises a visible light source, and the plurality of detection light sources are divided according to different refraction directions of the visible light after being refracted by the dispersion prism. As shown in fig. 3, after the visible light source 102 passes through the beam splitter 103, a visible light 102a with adjustable wavelength range is formed. After the visible light 102a passes through the prism 104, the light with different wavelengths has different irradiation directions after being refracted through the prism 104 due to the different refractive indexes of the prism for the light with different wavelengths. In this embodiment, the visible light 102a of the white light may be divided into red light 102b (wavelength-665 nm), orange light 102c (wavelength-630 nm), yellow light 102d (wavelength-600 nm), green light 102e (wavelength-550 nm), blue light 102f (wavelength-470 nm), indigo light 102g (wavelength-425 nm), and violet light 102h (wavelength-400 nm) according to the irradiation range and the wavelength of the light after being refracted by the prism 104. The wavelength of each light source is merely an approximate indication of the size range, and in the present embodiment, the size and range of the wavelength of each light source may need to be arbitrarily adjusted. It should also be noted that in the present embodiment, the white light band is divided into 7 intervals, but in other embodiments of the present invention, the range may be divided according to other criteria, such as less than 7 intervals or more than 7 intervals. The visible light source 102 may also be replaced by other light sources formed by mixing light with a plurality of different wavelengths, and may be separated by prism refraction, so as to form a plurality of different detection light sources. The plurality of detection light sources are continuously distributed in one direction to form a strip-shaped light source, and the plurality of detection light sources are continuously distributed in the length direction of the strip-shaped light source. And respectively scanning different rows in the array to be detected by adopting the plurality of detection light sources and acquiring a scanning image of each unit to be detected, wherein the scanning direction is vertical to the length direction of the strip-shaped light source.
As an example, as shown in fig. 4, when a plurality of detection light sources are used to respectively and simultaneously scan different rows in the array to be detected line by line, the different rows are located in the irradiation range of the visible light refracted by the dispersion prism. Any row in the array to be detected is scanned by one detection light source in the plurality of detection light sources; and comparing the scanned images of the units to be detected, which are scanned by the same detection light source, and judging the defect condition of the units to be detected. In fig. 4, a scanning detection is performed by using a strip-shaped light source formed by a plurality of detection light sources distributed continuously, which are red light 102b, orange light 102c, yellow light 102d, green light 102e, blue light 102f, indigo light 102g and violet light 102h. In the scanning process, the red light 102b, the orange light 102c, the yellow light 102d, the green light 102e, the blue light 102f, the indigo light 102g, and the violet light 102h respectively correspond to one row of the array to be detected in the wafer 100 to be detected. When the scanning process starts, the red light 102b corresponds to the 1 st row of the wafer 100 to be detected, the orange light 102c corresponds to the 2 nd row of the wafer 100 to be detected, the yellow light 102d corresponds to the 3 rd row of the wafer 100 to be detected, the green light 102e corresponds to the 4 th row of the wafer 100 to be detected, the blue light 102f corresponds to the 5 th row of the wafer 100 to be detected, the indigo light 102g corresponds to the 6 th row of the wafer 100 to be detected, and the violet light 102h corresponds to the 7 th row of the wafer 100 to be detected. The whole strip light source scans the units 101 to be detected in the rows 1 to 7 of the wafer 100 to be detected from left to right. And after the scanning of the 1 st row to the 7 th row is finished, the whole strip-shaped light source moves downwards and starts to scan from right to left. At this time, the red light 102b corresponds to the 8 th row of the wafer 100 to be detected, the orange light 102c corresponds to the 9 th row of the wafer 100 to be detected, the yellow light 102d corresponds to the 10 th row of the wafer 100 to be detected, the green light 102e corresponds to the 11 th row of the wafer 100 to be detected, the blue light 102f corresponds to the 12 th row of the wafer 100 to be detected, the indigo light 102g corresponds to the 13 th row of the wafer 100 to be detected, and the violet light 102h corresponds to the 14 th row of the wafer 100 to be detected. Repeating the above process, the strip light source will complete the scanning of the whole wafer by reciprocating scanning at 7 line intervals according to the path shown by the arrow. Any row in the array to be detected of the wafer 100 to be detected will be scanned by 1 of the 7 light sources of the strip light source. Through the arrangement, the strip-shaped light source can scan 7 rows of the units to be detected 101 in one scanning process, and compared with a traditional optical scanning method of line-by-line scanning, the scanning efficiency of the scanning method is undoubtedly greatly improved. For example, in the present embodiment, the units 101 to be detected with 35 rows in total can complete scanning only through 5 scanning processes, instead of scanning 35 times row by row in the existing scanning method using a single light source. In the scanning process, an optical acquisition device is used to acquire a scanning image of each unit 101 to be detected, so as to perform unit comparison and defect detection subsequently. Alternatively, when 7 light sources are used for scanning simultaneously in this embodiment, corresponding optical acquisition devices may be configured for the 7 light sources.
In step 3), please refer to step S3 and fig. 4 of fig. 1, compare the scanned images of the units to be detected, and determine the defect status of the units to be detected. In fig. 4, it can be seen that the red light 102b scans the units to be detected 101 in rows 1, 8, 15, 22 and 29 successively at 7 row intervals. In this embodiment, when comparing the scanning images, the scanning images of the unit to be detected 101 scanned by the same light source are compared.
As an example, the method of aligning the scan images comprises:
acquiring gray values of pixel points in two different scanning images;
calculating the Euclidean distance between the two scanning images according to the gray values of the corresponding pixel points in the two scanning images;
and comparing the similarity between the two scanned images according to the Euclidean distance.
The scanned image may be viewed as being composed of an array of pixels, e.g. a pairIn the square unit to be detected, the scanning image can be composed of N pixel points in an N × N array. In this embodiment, for two scanned images obtained by scanning with the same light source, the gray values of the pixel points at all corresponding positions of the two scanned images may be compared one by one to determine the difference between the two scanned images. Specifically, the euclidean distance between the two scanned images may be calculated according to the gray values of the corresponding pixel points. For example, there are two of the scanned images, denoted as a and B, each having n of the pixel points. The gray values of the pixels of the scanned image A are respectively as follows: a is 1 ,a 2 ,…,a n And the gray values of the pixels in the scanned image B are: b 1 ,b 2 ,…,b n . The scanned images with n pixel points can be regarded as points located in an n-dimensional space, and the euclidean distance between the two scanned images in the n-dimensional space can be expressed as:
wherein i =1,2, \8230;, n.
The larger the distance value, the larger the difference between the two scanned images. In general, the cells to be detected as repeating cells should have similar scanned images. If a large difference occurs between the scanned images, it indicates that the unit to be detected represented by the scanned images may have an abnormal defect. The units to be detected with defects can be detected by scanning and comparing each unit to be detected. Optionally, two adjacent units to be detected may be compared one by one, and when a certain unit to be detected has an abnormal defect, the comparison result between the certain unit to be detected and the two adjacent units to be detected before and after the certain unit to be detected shows a larger euclidean distance. All the detection units with abnormal defects can be found out by comparing the adjacent units to be detected line by line one by one.
As an example, calculating the gray average value of the corresponding pixel points in all the scanned images, and combining the gray average values of the pixel points to form a standard comparison image (golden image); and when comparing the scanned image, comparing the scanned image with the standard comparison image. The defect that the gradual-change defect cannot be detected exists in the comparison of the adjacent units to be detected. Therefore, the problem that the gradual change type defect cannot be detected can be solved by combining the average gray level values of the pixel points to form a standard comparison image and comparing the scanned image of each unit to be detected with the standard comparison image. The method for obtaining the standard comparison image comprises the steps of scanning a wafer, obtaining scanned image information of all units to be detected on the wafer, obtaining gray values of corresponding pixels in all the units to be detected, and extracting similar features according to a certain proportion (such as 90%) to form the standard comparison image.
As an example, computer code that calculates the euclidean distance of the scan image and the standard alignment image may be expressed as follows:
in the above code, a function for calculating euclidean _ distance is defined, baseImg represents a set of gray values of the standard alignment image, and targetImg represents a set of gray values of the scan image. After the baseImg and the targetImg are substituted into the function euclidean _ distance, the function euclidean _ distance calculates the Euclidean distance between the scanned image and the standard comparison image according to the formula (1-1), and finally returns the similarity between the two images represented by the Euclidean distance, wherein the smaller the Euclidean distance is, the greater the similarity is. In the programming process of the defect detection program, the function of the empirical _ distance and the gray value data of the scanned image can be called circularly, and the Euclidean distance between each scanned image and the standard comparison image is calculated to find out the unit to be detected with the defect.
In this embodiment, a jump-type detection method is adopted, a strip-shaped light source is adopted, and the wafer 100 to be detected is scanned at 7 line-to-line intervals, so that compared with a conventional optical scanning method of line-by-line scanning, the scanning efficiency of the scanning method in this embodiment is greatly improved.
Example two
Referring to fig. 5, the present embodiment provides a method for detecting a wafer defect, and compared with the first embodiment, the difference of the present embodiment is that a plurality of detection light sources are sequentially used to scan any row of the array to be detected, so as to obtain higher detection accuracy. Because different materials on the surface of the wafer have different reflectivities, when a single light source is adopted for scanning, the accurate detection of certain materials cannot be realized, and therefore, the detection results are more accurate and reliable by adopting the detection light sources with different wavelengths to sequentially carry out scanning detection. By the implementation scheme provided by the embodiment, the defects which cannot be accurately detected at a certain wavelength are detected under the scanning of another wavelength, so that higher detection accuracy is obtained.
As an example, any row in the array to be detected is sequentially scanned by all the detection light sources in the plurality of detection light sources; and sequentially comparing the scanned images of the units to be detected, which are obtained by scanning the same detection light source, and judging the defect condition of the units to be detected by combining the scanning comparison results of a plurality of detection light sources.
In fig. 5, a plurality of detection light sources distributed continuously are used for scanning detection, namely red light 102b, orange light 102c, yellow light 102d, green light 102e, blue light 102f, indigo light 102g and purple light 102h. In the scanning process, the red light 102b, the orange light 102c, the yellow light 102d, the green light 102e, the blue light 102f, the indigo light 102g, and the violet light 102h respectively correspond to one row of the array to be detected in the wafer 100 to be detected. When the scanning process starts, the purple light 102h at the lowest part of the whole strip-shaped light source is adopted to scan the units to be detected 101 in the first row of the wafer to be detected 100 from left to right according to the arrow direction. And after the first line of scanning is finished, the whole belt-shaped light source moves downwards by one line and scans from right to left according to the arrow direction. At this time, the violet light 102h scans the second row of the wafer 100 to be detected, and the indigo light 102g scans the first row of the wafer 100 to be detected. After the scanning is finished, the whole strip-shaped light source is moved downwards by one line again, and the scanning is carried out from left to right according to the arrow direction. It can be seen that as the strip light source moves down step by step and scans back and forth, the first row of the wafer 100 to be detected will be scanned by the violet light 102h, the indigo light 102g, the blue light 102f, the green light 102e, the yellow light 102d, the orange light 102c and the red light 102b in sequence, and the second row, the third row and even the subsequent rows of the wafer 100 to be detected will be scanned by each of the strip light sources. As the whole of the ribbon light source moves downward, the wafer 100 is scanned line by line from the top to the bottom of the wafer 100 (illustration of the intermediate scanning process is omitted in fig. 5). When the scanning process is performed below the wafer 100 to be detected, the wafer 100 to be detected is gradually moved out from the purple light 102h of the band-shaped light source. And ending the whole scanning process until the red light 102b finishes scanning the lowermost row in the wafer 100 to be detected. Because the wafers 100 to be detected in each row of the wafers 100 to be detected are independently scanned by the light sources with 7 different wavelengths, compared with the detection method adopting white light source scanning in the prior art, the scanning signals of the light sources with each wavelength in the embodiment are easier to distinguish and cannot interfere and be confused with each other, so that the detection result with higher detection precision can be obtained; compared with a detection result with a single wavelength, the method adopts different wavelengths to scan in sequence, different materials with different reflectivity can be covered, and a detection result with higher accuracy is obtained.
It should be noted that, in this embodiment, after one scan, the whole ribbon light source moves downward by one row, so that 7 light sources are used to scan each row of the units to be detected 101. In other embodiments of the present invention, the strip light source may also be shifted down by multiple rows, such as two or three rows, at a time, that is, each row of the units 101 to be detected is scanned by less than 7 light sources. This can ensure not only higher detection accuracy but also higher detection speed.
Other embodiments of this embodiment are the same as the first embodiment, and are not described herein again.
EXAMPLE III
The embodiment provides a wafer defect detecting device, including:
the light source generating module is used for generating a plurality of detection light sources;
the image scanning module is used for scanning the units to be detected in the array to be detected on the wafer to be detected by adopting a plurality of detection light sources and acquiring the scanning images of the units to be detected;
and the image comparison module is connected with the image scanning module and used for acquiring the scanning images from the image scanning module, comparing the scanning images of the units to be detected and judging the defect conditions of the units to be detected.
The wafer defect detecting apparatus provided in this embodiment may be used to implement the wafer defect detecting method provided in the first or second embodiment. The functions realized by the image scanning module and the image comparison module can be adjusted according to different wafer defect detection methods in the first embodiment or the second embodiment. For example, when the inspection method in which any one row of the array to be inspected is scanned by one of the detection light sources in the first embodiment is adopted, the image scanning module controls the plurality of detection light sources to scan the wafer to be inspected, and enables the array to be inspected in each row to be scanned by only one detection light source; when the detection method in which any one row of the array to be detected is sequentially scanned by all the detection light sources in the plurality of detection light sources in the second embodiment is adopted, the image scanning module controls the plurality of detection light sources to scan the wafer to be detected, and the array to be detected in each row is sequentially scanned by all the detection light sources. And the image comparison module judges the defect condition of the unit to be detected according to the scanned images obtained by different detection methods after comparison. Optionally, after obtaining the scanned image information of all the units to be detected, the image comparison module compares all the scanned images with the standard comparison image by forming the standard comparison image, and determines the defect status.
As an example, the light source generation module includes a visible light source and a dispersion prism. The visible light source, i.e. the white light source, includes a mixed light source composed of a plurality of light sources with different wavelengths. The dispersing prism is used to separate a plurality of light sources of different wavelengths by refraction. Optionally, a beam splitter is further disposed between the visible light source and the optical path of the dispersing prism, and the beam splitter can select a light source to pass through, so as to filter out a wavelength light source not needed for scanning detection.
In summary, the present invention provides a wafer defect detecting apparatus and method, wherein the wafer defect detecting method includes the following steps: providing a wafer to be detected, wherein the surface of the wafer to be detected is provided with an array to be detected, and the array to be detected is formed by arranging a plurality of units to be detected line by line; providing a plurality of detection light sources, respectively scanning different rows in the array to be detected by using the plurality of detection light sources, and acquiring a scanning image of each unit to be detected; and comparing the scanned images of the units to be detected, and judging the defect condition of the units to be detected. The invention adopts a plurality of detection light sources with different wavelengths to scan the arrays to be detected which are arranged in the wafer line by line, and when the detection light sources are adopted to synchronously scan all the arrays to be detected, the scanning efficiency can be effectively improved; when the plurality of detection light sources are adopted to sequentially scan the single-row array to be detected, the scanning precision can be effectively improved.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Those skilled in the art can modify or change the above-described embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (10)
1. A wafer defect detection method is characterized by comprising the following steps:
providing a wafer to be detected, wherein the surface of the wafer to be detected is provided with an array to be detected, and the array to be detected is formed by arranging a plurality of units to be detected line by line;
providing a plurality of detection light sources obtained by separating mixed light having a plurality of different wavelengths; the plurality of detection light sources are continuously distributed in one direction to form a strip-shaped light source, and the plurality of detection light sources are continuously distributed in the length direction of the strip-shaped light source; using a plurality of detection light sources to simultaneously and respectively scan different rows in the array to be detected and acquire a scanning image of each unit to be detected;
and comparing the scanned images of the units to be detected, which are scanned by the same detection light source, and judging the defect conditions of the units to be detected.
2. The wafer defect detection method of claim 1, wherein: the plurality of detection light sources are obtained by separating a mixed light source composed of lights with different wavelengths through a dispersion prism.
3. The wafer defect detection method of claim 2, wherein: the mixed light source comprises a visible light source, and the plurality of detection light sources are divided according to different refraction directions of the visible light after being refracted by the dispersion prism.
4. The wafer defect detection method of claim 3, wherein: and when the plurality of detection light sources are used for respectively and simultaneously scanning different lines in the array to be detected line by line, the different lines are positioned in the irradiation range of the visible light after being refracted by the dispersion prism.
5. The wafer defect detection method of claim 1, wherein: any row in the array to be detected is scanned by one detection light source in the plurality of detection light sources; and comparing the scanned images of the units to be detected, which are scanned by the same detection light source, and judging the defect conditions of the units to be detected.
6. The wafer defect detection method of claim 1, wherein: any row in the array to be detected is scanned by all the detection light sources in the plurality of detection light sources in sequence; and sequentially comparing the scanned images of the units to be detected, which are obtained by scanning the same detection light source, and judging the defect condition of the units to be detected by combining the scanning comparison results of a plurality of detection light sources.
7. The wafer defect detection method of claim 1, wherein: the method for comparing the scanned images comprises the following steps:
acquiring gray values of pixel points in two different scanning images;
calculating the Euclidean distance between the two scanning images according to the gray values of the corresponding pixel points in the two scanning images;
and comparing the similarity between the two scanned images according to the Euclidean distance.
8. The wafer defect detection method of claim 7, wherein: calculating the gray level average value of the corresponding pixel points in all the scanned images, and combining the gray level average values of the pixel points to form a standard comparison image; and when the scanned image is compared, comparing the scanned image with the standard comparison image.
9. A wafer defect detecting apparatus, comprising:
the light source generating module is used for generating a plurality of detection light sources; the plurality of detection light sources are obtained by separating mixed light with a plurality of different wavelengths; the plurality of detection light sources are continuously distributed in one direction to form a strip-shaped light source, and the plurality of detection light sources are continuously distributed in the length direction of the strip-shaped light source;
the image scanning module is used for simultaneously and respectively scanning different rows in the wafer array to be detected by adopting the plurality of detection light sources and acquiring a scanning image of each unit to be detected;
and the image comparison module is connected with the image scanning module and used for acquiring the scanning image from the image scanning module, comparing the scanning image of the unit to be detected, which is obtained by scanning the same detection light source, and judging the defect condition of the unit to be detected.
10. The wafer defect detecting apparatus according to claim 9, wherein: the light source generation module comprises a visible light source and a dispersion prism.
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| CN114113142B (en) * | 2022-01-24 | 2022-06-03 | 广州粤芯半导体技术有限公司 | Defect detection method and device for semiconductor device and electronic equipment |
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