CN112447496A - Semiconductor ion etching cleaning method - Google Patents
Semiconductor ion etching cleaning method Download PDFInfo
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- CN112447496A CN112447496A CN201910800497.8A CN201910800497A CN112447496A CN 112447496 A CN112447496 A CN 112447496A CN 201910800497 A CN201910800497 A CN 201910800497A CN 112447496 A CN112447496 A CN 112447496A
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- ion etching
- semiconductor
- cleaning
- seconds
- particles
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- 238000004140 cleaning Methods 0.000 title claims abstract description 68
- 238000000992 sputter etching Methods 0.000 title claims abstract description 64
- 239000004065 semiconductor Substances 0.000 title claims abstract description 60
- 238000000034 method Methods 0.000 title claims abstract description 41
- 239000002245 particle Substances 0.000 claims abstract description 52
- 239000007789 gas Substances 0.000 claims abstract description 48
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 39
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 19
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052786 argon Inorganic materials 0.000 claims abstract description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000001301 oxygen Substances 0.000 claims abstract description 8
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 8
- 238000005530 etching Methods 0.000 claims description 8
- 150000002500 ions Chemical class 0.000 claims description 8
- 229910001873 dinitrogen Inorganic materials 0.000 claims 1
- 230000003631 expected effect Effects 0.000 abstract description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- -1 hydroxide ions Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
- H01L21/02049—Dry cleaning only with gaseous HF
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention discloses a semiconductor ion etching cleaning method, which comprises a first ion etching cleaning step and a second ion etching cleaning step; the technological parameters of the first ion etching cleaning are as follows: the pressure of the chamber is 30mT, the power is 1000W-1200W, the introduced gas is argon or nitrogen, when the argon is used, the gas flow is 600sccm, when the nitrogen is used, the gas flow is 500sccm, and the time is 35-55 seconds; the technological parameters of the second ion etching cleaning are as follows: the pressure of the chamber is 20mT, the power is 1000W, the introduced gas is oxygen or nitrogen, the gas flow is 50sccm when oxygen is used, and the gas flow is 100-120 sccm when nitrogen is used, and the time is 60-80 seconds. According to the method, the particles with different particle sizes are cleaned step by adopting ion etching, so that the particles on the surface of the semiconductor can be effectively removed, and the expected effect is achieved.
Description
Technical Field
The invention relates to semiconductor surface treatment, in particular to a semiconductor ion etching cleaning method.
Background
In semiconductor processing, there are typically many particles attached. Particle removal in the conventional manner particles are detached from the silicon wafer by means of a mixture of deionized water, hydrogen peroxide and ammonia. But due to particle size imbalance. The condition of cleaning is difficult to meet, and the corrosion rates of hydroxide ions under different temperature and concentration conditions are different, so that the control is difficult.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provide a semiconductor ion etching cleaning method.
In order to achieve the purpose, the invention adopts the technical scheme that: a semiconductor ion etching cleaning method comprises the following steps:
(1) first ion etching cleaning;
(2) second ion etching and cleaning;
the first ion etching cleaning process parameters are as follows: the pressure of the chamber is 30mT, the power is 1000W-1200W, the introduced gas is argon or nitrogen, when the argon is used, the gas flow is 600sccm, when the nitrogen is used, the gas flow is 500sccm, and the time is 35-55 seconds;
the technological parameters of the second ion etching cleaning are as follows: the pressure of the chamber is 20mT, the power is 1000W, the introduced gas is oxygen or nitrogen, the gas flow is 50sccm when oxygen is used, and the gas flow is 100-120 sccm when nitrogen is used, and the time is 60-80 seconds.
Generally, the main component of the particles on the surface of the semiconductor is inorganic material, which is composed of silicon dioxide, and the particle sizes of the particles can be divided into two types, wherein the particle size of one type of particle is more than or equal to 30nm, and the particle size of the other type of particle is less than or equal to 30 nm. The first ion etching is mainly to remove 30-100nm particles, and the second ion etching is mainly to remove 10-30nm particles. According to the method, the particles with different particle sizes are gradually cleaned in steps by adopting an ion etching mode, so that the particles on the surface of the semiconductor can be effectively removed under the cleaning condition of the method, and the expected effect is achieved.
As a preferred embodiment of the semiconductor ion etching cleaning method, when the proportion of the particles on the surface of the semiconductor is more than or equal to 30nm and less than or equal to 20%, the first ion etching cleaning time is 35 seconds;
when the proportion of the particles on the surface of the semiconductor is 20-50% of the size of more than or equal to 30nm, the first ion etching cleaning time is 40 seconds;
when the proportion of the particles on the surface of the semiconductor is 50-70% of the size of more than or equal to 30nm, the first ion etching cleaning time is 50 seconds;
when the proportion of the particles on the surface of the semiconductor is 70-80% of the size of more than or equal to 30nm, the first ion etching cleaning time is 55 seconds.
As a preferred embodiment of the semiconductor ion etching cleaning method, when the proportion of particles with the size less than or equal to 30nm on the surface of the semiconductor is 20-30%, the second ion etching cleaning time is 60 seconds;
when the proportion of the particles on the surface of the semiconductor, the size of which is less than or equal to 30nm, is 30-50%, the time for etching and cleaning the second ions is 65 seconds;
when the proportion of the particles on the surface of the semiconductor, the size of which is less than or equal to 30nm, is 50-70%, the time for etching and cleaning the second ions is 70 seconds;
and when the proportion of the particles on the surface of the semiconductor, the size of which is less than or equal to 30nm, is 70-80%, the time for cleaning by the second ion etching is 80 seconds.
When the particle contents of different particle diameters are different, the cleaning time needs to be changed, the particle diameter range and the content of each particle are preferably selected by the cleaning time, the cleaning effect is good, and the surface of the semiconductor is not damaged.
As a preferred embodiment of the semiconductor ion etching cleaning method, the method also comprises a step (1a) of removing a semiconductor surface oxide layer by adopting ion etching cleaning before the first ion etching cleaning, wherein the process parameters are as follows: the pressure of the chamber is 5mT, the power is 300W, and the introduced gas is CF4The gas flow rate was 50sccm for 5 seconds. The oxide layer on the surface of the semiconductor can be effectively cleaned by adopting the conditions.
As a preferred embodiment of the semiconductor ion etching cleaning method of the present invention, the gas used in the second ion etching cleaning is nitrogen, and the effect of cleaning with nitrogen is better than that with oxygen.
The invention has the beneficial effects that: the invention provides a semiconductor ion etching cleaning method, which can effectively remove particles on the surface of a semiconductor under the cleaning condition by gradually cleaning particles with different particle sizes in steps in an ion etching manner to achieve the expected effect.
Detailed Description
To better illustrate the objects, aspects and advantages of the present invention, the present invention will be further described with reference to specific examples.
Example 1
In an embodiment of the method for cleaning semiconductor ions by etching, the method of this embodiment includes the following steps:
(1) the method comprises the following steps of cleaning and removing an oxide layer on the surface of a semiconductor by adopting ion etching, wherein the process parameters are as follows: the pressure of the chamber is 5mT, the power is 300W, and the introduced gas is CF4The gas flow is 50sccm for 5 seconds;
(2) carrying out ion etching on a semiconductor containing 70-80% of particles with the size larger than or equal to 30nm, wherein the technological parameters are as follows: the pressure of the chamber is 30mT, the power is 1200W, the introduced gas is argon, the gas flow is 600sccm, and the time is 55 seconds;
(3) carrying out ion etching on a semiconductor containing 20-30% of particles with the size less than or equal to 30nm, wherein the technological parameters are as follows: the pressure of the chamber is 20mT, the power is 1000W, the introduced gas is oxygen, the gas flow is 50sccm, and the time is 60 seconds.
Example 2
In an embodiment of the method for cleaning semiconductor ions by etching, the method of this embodiment includes the following steps:
(1) the method comprises the following steps of cleaning and removing an oxide layer on the surface of a semiconductor by adopting ion etching, wherein the process parameters are as follows: the pressure of the chamber is 5mT, the power is 300W, and the introduced gas is CF4The gas flow is 50sccm for 5 seconds;
(2) carrying out ion etching on a semiconductor containing 50-70% of particles with the size larger than or equal to 30nm, wherein the technological parameters are as follows: the pressure of the chamber is 30mT, the power is 1000W, the introduced gas is nitrogen, the gas flow is 500sccm, and the time is 50 seconds;
(3) carrying out ion etching on a semiconductor containing particles with the size of less than or equal to 30nm accounting for 30-50%, wherein the technological parameters are as follows: the chamber pressure was 20mT, the power was 1000W, the gas was introduced as nitrogen, the gas flow was 120sccm, and the time was 65 seconds.
Example 3
In an embodiment of the method for cleaning semiconductor ions by etching, the method of this embodiment includes the following steps:
(1) the method comprises the following steps of cleaning and removing an oxide layer on the surface of a semiconductor by adopting ion etching, wherein the process parameters are as follows: chamber pressureThe force is 5mT, the power is 300W, and the introduced gas is CF4The gas flow is 50sccm for 5 seconds;
(2) carrying out ion etching on a semiconductor containing 20-50% of particles with the size larger than or equal to 30nm, wherein the technological parameters are as follows: the pressure of the chamber is 30mT, the power is 1100W, the introduced gas is argon, the gas flow is 600sccm, and the time is 40 seconds;
(3) carrying out ion etching on a semiconductor containing particles with the size of less than or equal to 30nm accounting for 50-80%, wherein the technological parameters are as follows: the chamber pressure was 20mT, the power was 1000W, the gas was introduced as nitrogen, the gas flow was 110sccm, and the time was 70 seconds.
Example 4
In an embodiment of the method for cleaning semiconductor ions by etching, the method of this embodiment includes the following steps:
(1) the method comprises the following steps of cleaning and removing an oxide layer on the surface of a semiconductor by adopting ion etching, wherein the process parameters are as follows: the pressure of the chamber is 5mT, the power is 300W, and the introduced gas is CF4The gas flow is 50sccm for 5 seconds;
(2) carrying out ion etching on a semiconductor containing particles with the size of more than or equal to 30nm in a ratio of less than or equal to 20%, wherein the technological parameters are as follows: the pressure of the chamber is 30mT, the power is 1000W, the introduced gas is nitrogen, the gas flow is 500sccm, and the time is 35 seconds;
(3) carrying out ion etching on a semiconductor containing particles with the size of less than or equal to 30nm in a ratio of more than or equal to 80%, wherein the technological parameters are as follows: the chamber pressure was 20mT, the power was 1000W, the gas was introduced as nitrogen, the gas flow was 120sccm, and the time was 80 seconds.
The semiconductor surface particles cleaned by the semiconductor ion etching cleaning method of the embodiment 1-4 are reduced by more than 95% compared with the particles before cleaning.
Finally, it should be noted that the above embodiments are only used for illustrating the technical solutions of the present invention and not for limiting the protection scope of the present invention, and although the present invention is described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications or equivalent substitutions can be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention.
Claims (5)
1. A semiconductor ion etching cleaning method is characterized by comprising the following steps:
(1) first ion etching cleaning;
(2) second ion etching and cleaning;
the first ion etching cleaning process parameters are as follows: the pressure of the chamber is 30mT, the power is 1000W-1200W, the introduced gas is argon or nitrogen, when the argon is used, the gas flow is 600sccm, when the nitrogen is used, the gas flow is 500sccm, and the time is 35-55 seconds;
the technological parameters of the second ion etching cleaning are as follows: the pressure of the chamber is 20mT, the power is 1000W, the introduced gas is oxygen or nitrogen, the gas flow is 50sccm when oxygen is used, and the gas flow is 100-120 sccm when nitrogen is used, and the time is 60-80 seconds.
2. The semiconductor ion etching cleaning method according to claim 1, wherein the time of the first ion etching cleaning is 35 seconds when the ratio of the size of the semiconductor surface particles is not more than 30nm and not more than 20%;
when the proportion of the particles on the surface of the semiconductor is 20-50% of the size of more than or equal to 30nm, the first ion etching cleaning time is 40 seconds;
when the proportion of the particles on the surface of the semiconductor is 50-70% of the size of more than or equal to 30nm, the first ion etching cleaning time is 50 seconds;
when the proportion of the particles on the surface of the semiconductor is 70-80% of the size of more than or equal to 30nm, the first ion etching cleaning time is 55 seconds.
3. The semiconductor ion etching cleaning method according to claim 1, wherein when the ratio of the size of the semiconductor surface particles of 30nm or less is 20 to 30%, the time for the second ion etching cleaning is 60 seconds;
when the proportion of the particles on the surface of the semiconductor, the size of which is less than or equal to 30nm, is 30-50%, the time for etching and cleaning the second ions is 65 seconds;
when the proportion of the particles on the surface of the semiconductor, the size of which is less than or equal to 30nm, is 50-70%, the time for etching and cleaning the second ions is 70 seconds;
and when the proportion of the particles on the surface of the semiconductor, the size of which is less than or equal to 30nm, is 70-80%, the time for cleaning by the second ion etching is 80 seconds.
4. The semiconductor ion etching cleaning method according to claim 1, further comprising, before the first ion etching cleaning, a step (1a) of removing a surface oxide layer of the semiconductor by ion etching cleaning, wherein the process parameters are as follows: the pressure of the chamber is 5mT, the power is 300W, and the introduced gas is CF4The gas flow rate was 50sccm for 5 seconds.
5. The semiconductor ion etching cleaning method according to claim 1, wherein the gas used for the second ion etching cleaning is nitrogen gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910800497.8A CN112447496B (en) | 2019-08-28 | 2019-08-28 | Ion etching cleaning method for semiconductor |
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| CN201910800497.8A CN112447496B (en) | 2019-08-28 | 2019-08-28 | Ion etching cleaning method for semiconductor |
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| CN112447496A true CN112447496A (en) | 2021-03-05 |
| CN112447496B CN112447496B (en) | 2024-10-18 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5328555A (en) * | 1992-11-24 | 1994-07-12 | Applied Materials, Inc. | Reducing particulate contamination during semiconductor device processing |
| US6144083A (en) * | 1998-06-10 | 2000-11-07 | Micron Technology, Inc. | Method of reducing defects in anti-reflective coatings and semiconductor structures fabricated thereby |
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| KR20020000206A (en) * | 2000-06-23 | 2002-01-05 | 최승락 | Method cleaning Liquid Chrystal Display using Laser and Remote Plasma |
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