CN112447471A - Plasma processing system and operation method thereof - Google Patents
Plasma processing system and operation method thereof Download PDFInfo
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- CN112447471A CN112447471A CN201910831937.6A CN201910831937A CN112447471A CN 112447471 A CN112447471 A CN 112447471A CN 201910831937 A CN201910831937 A CN 201910831937A CN 112447471 A CN112447471 A CN 112447471A
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 20
- 238000001514 detection method Methods 0.000 claims abstract description 11
- 239000013078 crystal Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 6
- 239000007921 spray Substances 0.000 claims description 4
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 230000008569 process Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 7
- 239000003990 capacitor Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
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- 238000004519 manufacturing process Methods 0.000 description 1
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- 230000004048 modification Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/24—Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
- H01J37/241—High voltage power supply or regulation circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/248—Components associated with high voltage supply
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
- H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
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- H—ELECTRICITY
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- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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Abstract
The invention provides a capacitive coupling plasma processor, wherein a high-frequency radio frequency power supply outputs radio frequency power with a first frequency to a base through a first matcher, and a low-frequency radio frequency power supply outputs radio frequency power with a second frequency to the base through a second matcher, wherein the first frequency is more than 10MHz, and the second frequency is less than or equal to 300 KHz; a controller and a variable frequency detection part are connected between the output end of the high-frequency radio frequency power supply and the base; the frequency conversion detection part comprises a mixer, the mixer comprises a first end for receiving an auxiliary frequency signal, a second end for receiving a radio frequency power signal reflected by the base, and a third end connected to the input end of a band-pass filter, the band-pass filter screens out a signal with a third frequency and outputs the signal to the controller through the output end of the band-pass filter, and the controller calculates the radio frequency power value reflected by the base according to the signal with the third frequency so as to control the first matcher or the high-frequency radio frequency power supply.
Description
Technical Field
The invention relates to the technical field of semiconductor processing, in particular to a plasma processing system, and particularly relates to a design and control method of a radio frequency supply system in the plasma processing system.
Background
Semiconductor chips are increasingly used in a variety of electronic devices, wherein the semiconductor chip processing requires a large number of plasma processors that perform plasma etching, chemical vapor deposition, and other processes on a substrate to be processed. Fig. 1 is a block diagram of a typical plasma processor including a reaction chamber 101 including a susceptor 10, an electrostatic chuck 21 disposed above the susceptor, and a substrate 100 to be processed fixed on the electrostatic chuck 21. An edge ring 22 is also included around the electrostatic chuck and substrate. The susceptor 10 is connected to a high frequency radio source (HF) through a first matcher, and is connected to a low frequency radio source (LF) through a second matcher. The reaction chamber is provided with a disc-shaped gas spray header 11 opposite to the base, and the gas spray header is communicated with an external gas source 200 through a gas pipeline. In the prior art, the frequency of the high frequency rf source is required to be greater than 13MHz (e.g., 60MHz), the frequency of the low frequency rf source is typically 1-2MHz, and the power levels of the two are used to control the concentration of plasma P in the plasma processor and the energy of the ions incident on the large substrate, respectively. The matcher is provided with a filter circuit, for example, the parameter setting of the first filter circuit in the first matcher enables only radio frequency power of about 60Mhz to pass through, and radio frequency power of other frequencies, such as 1-2Mhz, harmonic of low-frequency radio frequency power, and 58Mhz and 62Mhz generated after mixing of low frequency and high frequency, are blocked by high impedance of the filter.
In applications requiring etching with ultra-high aspect ratios (greater than 40), such as 3D NAND memory fabrication processes, ions are required to have very high incident energy, and in order to increase ion energy without greatly increasing LF rf power, the frequency of the low frequency rf needs to be greatly reduced. For example, if the rf frequency of LF is reduced below 300KHz, the frequencies generated by the mixing are 59.7MHz and 60.3MHz, which are very close to the 60MHz frequency to be detected. At this time, the filter circuit in the matcher cannot filter the above-mentioned interfering mixing frequency signal. These signals cannot be filtered, so that the magnitude of the high-frequency power reflected to the matcher 1 cannot be accurately detected, and the action of the matcher cannot be accurately controlled to perform impedance matching. This can have a number of serious consequences: plasma instability, power waste, line overheating, all of which can lead to plasma processing process failure. Even though the inductance and the capacitance in the filter circuit are specially designed, the filter can screen out 60Mhz and simultaneously block other mixing frequencies with a difference of only 1/200 from 60Mhz, the inductance and the capacitance with extremely large values are needed in the design, so that the response of the filter is too slow to keep up with the impedance state changing rapidly in a plasma processor, and finally, the matcher cannot realize effective impedance matching.
Therefore, there is a need in the art to develop a new matching circuit, which can effectively detect the reflected power of the high-frequency rf power when using the bias rf power of the ultra-low frequency, and can also achieve fast impedance matching.
Disclosure of Invention
The present invention provides a plasma processor, comprising: the device comprises a reaction cavity, a base is arranged at the bottom in the reaction cavity and used for supporting a substrate to be processed, a gas spray header is arranged at the top of the reaction cavity opposite to the base, a high-frequency radio frequency power supply outputs radio frequency power with a first frequency f1 to the base through a first matcher, a low-frequency radio frequency power supply outputs radio frequency power with a second frequency f2 to the base through a second matcher, wherein the first frequency f1 is greater than 10MHz, and the second frequency f2 is less than or equal to 300 KHz; a controller and a variable frequency detection part are connected between the output end of the high-frequency radio frequency power supply and the base; the variable-frequency detection part comprises a mixer, the mixer comprises a first end for receiving an auxiliary frequency signal, a second end for receiving the radio-frequency power signal reflected by the base, and a third end connected to the input end of a band-pass filter, the band-pass filter screens out a third frequency f3 signal and outputs the signal to the controller through the output end of the band-pass filter, and the controller calculates the radio-frequency power value reflected by the base according to the third frequency f3 signal so as to control the first matcher or the high-frequency radio-frequency power supply.
Optionally, the variable frequency detection part further includes a crystal oscillator, the crystal oscillator outputs the auxiliary frequency signal, and the auxiliary frequency is a difference between the first frequency f1 and the third frequency f 3.
Optionally, the first frequency f1 output by the high-frequency rf power supply may be adjustable within a frequency range of (f1- Δ/2) - (f1+ Δ/2), the auxiliary frequency is a difference between the first frequency value f1 and a third frequency f3, wherein the third frequency f3 is greater than or equal to the frequency width range Δ. The frequency conversion detection part also comprises a second crystal oscillator outputting a signal with a third frequency f3, a first end of a second mixer receiving the signal with the third frequency f3, a second end of the second mixer receiving the signal with the first frequency f1 output by the high-frequency radio frequency power supply, and a mixed signal output by the second mixer outputting the auxiliary frequency signal after being filtered by a second filter. Wherein the frequency conversion range delta of the first frequency f1 is larger than 500K and smaller than 4 MHz. Further, the second filter is a low-pass filter.
Further, the ratio f3/f2 of the third frequency to f3 to the second frequency f2 is less than 60 times.
Further, the high-frequency radio frequency power supply outputs pulse-type variable power, so that the output power is changed between different power amplitudes, wherein the pulse frequency is greater than 10Hz and less than 100 KHz.
The controller outputs a control signal to control the variable capacitor in the first matcher to act so as to enable the power output by the high-frequency radio frequency power supply to be matched with the impedance in the plasma processor.
The plasma processor is suitable for etching holes with the depth-to-width ratio of more than 40, extremely low-frequency (0.3Mhz) radio frequency power is required during high-depth-to-width ratio etching, and mixing signals in the high-frequency radio frequency power can be effectively separated by adopting the plasma processor, so that better matching is realized.
Drawings
FIG. 1 is a schematic diagram of a prior art plasma processor configuration;
FIG. 2a is a diagram of a matcher and its control circuit in a plasma processor according to the present invention;
FIG. 2b is a schematic diagram illustrating a process of processing RF signals in the matcher and the control circuit thereof shown in FIG. 2 a;
FIG. 3a is a diagram of a matcher and a control circuit thereof for a plasma processor according to another embodiment of the present invention;
FIG. 3b is a schematic diagram illustrating a process of processing the RF signal in the matcher and the control circuit thereof shown in FIG. 3 a.
Detailed Description
The following further describes an embodiment of the present invention with reference to fig. 2-3.
Referring to fig. 2a, a matcher and a control circuit thereof in a plasma processor of the present invention are shown, wherein the frequency of a low frequency LF rf power supply is 0.3MHz, and the frequency of a high frequency HF rf power supply is 60 MHz. The main difference from the prior art shown in fig. 1 is that the present invention provides a frequency-conversion detecting part 30 suitable for a multi-frequency rf processor with an ultra-low frequency rf power source. The frequency-conversion detecting section 30 of the present invention includes a crystal oscillator that outputs an auxiliary frequency signal S0 having a fixed frequency, such as 59 MHz. A mixer M0 receives the signal S0 at one end and passes through a reflected power signal receiver 40 at the other end to separate the reflected power signal S1 from the plasma processor, and a mixer M0 receives the reflected power signal S1 and the auxiliary frequency signal S0 from the reaction chamber, mixes the two signals and outputs a mixed signal S10. Fig. 2b shows the frequency distribution of the signals S1, S0, S10 during the reflected power signal processing of the present invention. Wherein the horizontal axis is the rf frequency and the vertical axis is the power intensity of different frequencies, each spike represents that a large amount of power in the signal is concentrated at a specific frequency, such as the reflected power S0 having a peak 59M, indicating that the rf energy of the auxiliary frequency signal S0 is concentrated at about 59 Mhz. The reflected rf signal S1 includes, in addition to the 60MHz signal output by the high frequency rf signal source, interference signals 59.7MHz and 60.3MHz generated by mixing with 0.3MHz in the base. The signal S10 mixed and output by the mixer M0 includes the frequency signals added and subtracted from S0 and S1, and only the frequency subtracted from the two is taken for the convenience of back-end filtering: 0.7, 1, 1.3 MHz. The difference between these 3 frequencies is still only 0.3MHz, but since the overall frequency value is greatly reduced, the ratio of the difference between the middle 1MHz and the interference frequencies on both sides becomes 30%. The 1MHz signal can be screened out by arranging a simple filter, although the frequency conversion is carried out, the 1MHz signal S2 can still indirectly reflect the amplitude of 60MHz in S1, so that the magnitude of the reflected power of 60MHz in the S1 signal can be calculated and deduced by detecting the strength of the 1MHz signal in the S2 signal. The controller receives the S2 signal and the output power signal of the high-frequency rf power supply HF to calculate the reflectivity of the 60MHz rf power, and adjusts the variable capacitor in the matcher 1 according to the reflectivity data to implement impedance matching.
The matcher and the control circuit shown in fig. 2 can effectively match a power source with a fixed radio frequency, but it is difficult to match a radio frequency power source with a frequency conversion function. For example, the output frequency of the high-frequency radio frequency power source can be changed between 58-62MHz, and the impedance matching speed can be faster than that of the matching circuit by adjusting the variable capacitor through the change of the output frequency of the radio frequency power source. If a fixed auxiliary frequency S0 is still used, such as 57MHz, then it will be mixed with the reflected signal S1 to produce a frequency distribution S10 of (0.7-1-1.3) - (4.7-5-5.3). Although the frequency differences between the different frequencies are all 0.3MHz, the filter at the back end cannot effectively screen out the effective signal S2 in the frequency band S10 thus varied with fixed parameters, since the absolute value of the frequency varies greatly (0.7:4.7 ≈ 7).
In order to solve the problem of applicability in the frequency conversion application, the present invention proposes a matcher and a controller thereof according to a second embodiment as shown in fig. 3 a. The present invention proposes another frequency-conversion detection section 32, which includes a crystal oscillator outputting an auxiliary rf signal S0 ', wherein the frequency of the signal S0' can be selected to be 5 MHz. The frequency of the signal S11 output by the radio frequency power supply is adjustable within the range of 58-62 MHz. The first mixer M1 receives the S0' signal and the S11 signal and generates a first mixed signal (S11-5MHz) -S11- (S11+5MHz), in which the frequency of S11 is variable, so the specific frequencies of the three mixed signals are also variable. When the frequency is variable
When the output frequency of the signal S11 is 59MHz, the corresponding mixing signal is 54MHz-59MHz-63MHz, and the corresponding 3 mixing signal ranges in the frequency variation range of S11 are 53-57MHz,58-62MHz and 63-67MHz respectively. Even though the above-mentioned 3 mixing signals all have variable ranges, the 3 frequency bands do not overlap, so one of the frequency bands can be selected by a band-pass filter, for example, the frequency band of S11-5MHz with the lowest frequency can be selected by a low-pass filter to be output as the intermediate frequency signal S14. A second mixer M2 receives the signal S14 at one end and the RF signal S12 reflected from the bottom electrode of the susceptor in the chamber at the other end, wherein the reflected power signal S12 includes a set of frequency signals of (S11-0.3MHz) -S11- (S11+0.3Mhz), and outputs a signal S16 after being mixed by the second mixer. The mixed signal includes a plurality of mixed frequency signals including a first frequency band S12-S14, a second frequency band S12, and a third frequency band S12+ S14. The S12-S14 frequency segments all contain variable frequency S11, so that only absolute values of frequencies are left after subtraction of the two frequency segments, the formed frequency segments are 4.7MHz-5MHz-5.3MHz, the fixed frequency values are convenient for subsequent filter parameter design, therefore, 5MHz in the first frequency segment is selected as a radio frequency reflected power detection signal S20, a controller receives the S20 signal, the strength of the S20 signal is detected and calculated, a signal reflecting the actual radio frequency reflected power in the S12 signal can be obtained, and a matcher 1 or a radio frequency power supply is controlled in a feedback mode according to the power value. Wherein, the control signal C1 output by the controller is output to the matcher 1 for controlling the variable capacitance in the matcher, and the control signal C2 output by the controller is output to the radio frequency power supply for controlling the output frequency or the radio frequency power of the high frequency radio frequency power supply, so that the high frequency radio frequency power can be effectively supplied to the lower electrode in the base 10 according to the process requirement, the reflection of the radio frequency power is reduced, and stable plasma is obtained. The frequency of S0 needs to be greater than or equal to the frequency variation range of S11, for example, 5MHz >62-58 ═ 4MHz in the above embodiment, when the frequency variation range in the variable frequency signal S11 is only 2MHz, the frequency of S0 may be 2.5MHz or 3MHz, such S0 can ensure that there is no overlapping frequency in three mixing signal segments generated after mixing by the first mixer M1, and thus a fixed low-pass filter can be used to screen out the corresponding signal S14, and signals in other frequency bands can be prevented from entering the subsequent processing circuit through the low-pass filter.
The band pass filter of the present invention may separate the 5MHz signal and calculate the power intensity of the corresponding S11 signal, or may further detect and calculate the mixing power intensity of 4.7MHz and 5.3MHz, and input the mixing power intensity to the matching unit 1 as a parameter. The matcher 1 may calculate and control the variable parameters comprehensively according to the power intensities of the two reflection signals (e.g., the mixing signals 59.7 and 60.3MHz when the high-frequency rf is 60MHz), so as to minimize the two reflection powers.
Fig. 3b is a schematic diagram illustrating a radio frequency signal processing process and frequency conversion process occurring during the operation of the matcher and the control circuit thereof in fig. 3 a. As can be seen from the figure, the process of mixing, selecting, mixing again and selecting multiple frequencies in the variable frequency detection section 32 of the present invention finally utilizes two-stage mixing and frequency selection, so that the frequency signal to be passed can be still screened out by a fixed filter when the high-frequency rf frequency is variable, and the frequency signal reflects the reflected signal S11 of the high-frequency rf frequency in the reflected power S12. For the application occasions requiring pulse type radio frequency power output, the radio frequency power output by the high-frequency radio frequency power supply needs to be rapidly switched between high power and low power, the pulse frequency can be selected to be 10-100KHz, the variable capacitor in the traditional matcher cannot rapidly change the capacitance value to realize rapid matching in the rapid change process, and the impedance in the plasma processor can be rapidly matched only by rapidly adjusting the frequency of the high-frequency radio frequency power supply. Therefore, the second embodiment of the present invention can make the frequency converter 32 in fig. 3a still effectively detect the reflected power value of the high frequency rf power when the signal outputted from the high frequency rf power supply varies within a frequency range Δ (i.e., (f1- Δ/2) - (f1+ Δ/2)).
The invention converts the high-frequency signal which can not be separated by the filter in the prior art into the signal of other frequency bands in a frequency mixing mode, screens out the high-frequency signal to be detected by the filter after the frequency bands are converted, and finally calculates the high-frequency radio frequency power value reflected back to the matcher from the reaction cavity by measuring the screened high-frequency signal. The high-frequency power value is obtained through calculation, and the feedback control matcher 1 can realize the matching of the high-frequency radio-frequency power and the impedance in the plasma processor. While the present invention has been described in detail with reference to the preferred embodiments, it should be understood that the above description should not be taken as limiting the invention. Various modifications and alterations to this invention will become apparent to those skilled in the art upon reading the foregoing description. Accordingly, the scope of the invention should be determined from the following claims.
Claims (10)
1. A plasma processor comprising:
a reaction chamber, the bottom of the reaction chamber comprises a base for supporting a substrate to be processed, the top of the reaction chamber opposite to the base comprises a gas spray header,
a high frequency RF power source outputting RF power of a first frequency f1 to the base through a first matcher, a low frequency RF power source outputting RF power of a second frequency f2 to the base through a second matcher, wherein the first frequency f1 is greater than 10MHz, and the second frequency f2 is less than or equal to 300 KHz;
a controller and a variable frequency detection part are connected between the output end of the high-frequency radio frequency power supply and the base;
the variable-frequency detection part comprises a mixer, the mixer comprises a first end for receiving an auxiliary frequency signal, a second end for receiving the radio-frequency power signal reflected by the base, and a third end connected to the input end of a band-pass filter, the band-pass filter screens out a third frequency f3 signal and outputs the signal to the controller through the output end of the band-pass filter, and the controller calculates the radio-frequency power value reflected by the base according to the third frequency f3 signal so as to control the first matcher or the high-frequency radio-frequency power supply.
2. The plasma processor of claim 1 wherein the variable frequency detector section further comprises a crystal oscillator, the crystal oscillator outputting the auxiliary frequency signal, the auxiliary frequency being the difference between the first frequency f1 and the third frequency f 3.
3. The plasma processor of claim 1 wherein the first frequency f1 of the high frequency rf power output is adjustable within a frequency range of (f1- Δ/2) - (f1+ Δ/2), the auxiliary frequency is a difference between the first frequency value f1 and a third frequency f3, wherein the third frequency f3 is equal to or greater than the frequency width range Δ.
4. The plasma processor of claim 3 wherein the variable frequency detector further comprises a second crystal oscillator outputting a third frequency f3, a second mixer receiving the third frequency f3 at a first end and receiving the first frequency f1 from the high frequency rf power source at a second end, the second mixer outputting a mixed signal filtered by a second filter to output the auxiliary frequency signal.
5. The plasma processor of claim 3 wherein the frequency width range Δ is greater than 500K and less than 4 MHz.
6. The plasma processor of claim 4 wherein the second filter is a low pass filter.
7. The plasma processor of claim 1 wherein a ratio f3/f2 of the third frequency to f3 to the second frequency f2 is less than 60 times.
8. The plasma processor of claim 3 wherein the high frequency rf power source outputs power that varies in pulses such that the output power varies between different power amplitudes, wherein the pulse frequency is greater than 10Hz and less than 100 KHz.
9. The plasma processor of claim 1 wherein the control signal output by the controller controls the variable capacitance in the first matcher to act to match the power output by the high frequency rf power supply to an impedance in the plasma processor.
10. The plasma processor of claim 9 wherein the plasma processor is configured to etch an etch hole having an aspect ratio greater than 40.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910831937.6A CN112447471A (en) | 2019-09-04 | 2019-09-04 | Plasma processing system and operation method thereof |
| TW109127281A TWI794631B (en) | 2019-09-04 | 2020-08-12 | plasma processor |
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| CN201910831937.6A CN112447471A (en) | 2019-09-04 | 2019-09-04 | Plasma processing system and operation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024093697A1 (en) * | 2022-11-01 | 2024-05-10 | 中微半导体设备(上海)股份有限公司 | Capacitively coupled plasma processor |
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| US20140345802A1 (en) * | 2011-12-16 | 2014-11-27 | Tokyo Electron Limited | Plasma processing apparatus |
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| JP3778842B2 (en) * | 2001-10-30 | 2006-05-24 | パール工業株式会社 | High frequency detection method and high frequency detection circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6311638B1 (en) * | 1999-02-10 | 2001-11-06 | Tokyo Electron Limited | Plasma processing method and apparatus |
| CN1380730A (en) * | 2001-04-06 | 2002-11-20 | Eni技术公司 | Reflection coefficient phase detector |
| CN1602651A (en) * | 2001-12-10 | 2005-03-30 | 东京毅力科创株式会社 | High-frequency power source and its control method, and plasma processor |
| US6791274B1 (en) * | 2003-07-15 | 2004-09-14 | Advanced Energy Industries, Inc. | RF power control device for RF plasma applications |
| CN101188901A (en) * | 2006-11-22 | 2008-05-28 | 巴尔工业株式会社 | High frequency power supply device and high frequency power supplying method |
| JP2008276966A (en) * | 2007-04-25 | 2008-11-13 | Daihen Corp | High-frequency power supply device |
| US20140345802A1 (en) * | 2011-12-16 | 2014-11-27 | Tokyo Electron Limited | Plasma processing apparatus |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2024093697A1 (en) * | 2022-11-01 | 2024-05-10 | 中微半导体设备(上海)股份有限公司 | Capacitively coupled plasma processor |
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| TWI794631B (en) | 2023-03-01 |
| TW202125563A (en) | 2021-07-01 |
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