CN112436808A - Multi-mode control bias circuit - Google Patents
Multi-mode control bias circuit Download PDFInfo
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- CN112436808A CN112436808A CN202110110256.8A CN202110110256A CN112436808A CN 112436808 A CN112436808 A CN 112436808A CN 202110110256 A CN202110110256 A CN 202110110256A CN 112436808 A CN112436808 A CN 112436808A
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- 238000002347 injection Methods 0.000 abstract description 16
- 239000007924 injection Substances 0.000 abstract description 16
- 230000003321 amplification Effects 0.000 description 4
- 238000003199 nucleic acid amplification method Methods 0.000 description 4
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- 238000004891 communication Methods 0.000 description 2
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
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Abstract
The invention discloses a multi-mode control bias circuit, which comprises a transistor T1, a transistor T2, a transistor T3, a transistor T4 and a radio frequency transistor, wherein a collector and a base of the transistor T1 are interconnected together, and a collector and a base of the transistor T3 are interconnected together; the emitter of the transistor T1 is connected to the base of the transistor T3 and then connected in series with a resistor R2 to ground, the collector of the transistor T1 is connected to the collector of the transistor T2, the emitter of the transistor T2 is connected to the emitter of the transistor T3, and the base of the transistor T2 is connected in series with the resistor R5 and then connected to the voltage control circuit node VMODE. By combining the control voltage of the bias circuit and adjusting the magnitude of the injection current of the bias circuit, the invention makes full use of the characteristic that the transconductance of the radio frequency transistor changes along with the magnitude of the injection current, realizes multi-mode control and meets the requirements of a multi-mode amplifier, thereby having the advantages of simple structure and high cost performance.
Description
Technical Field
The invention relates to the technical field of radio frequency microwave semiconductor circuits, in particular to a multimode control bias circuit.
Background
The development of wireless communication technology has promoted the continuous progress of radio frequency front end module, and in mobile communication and satellite communication terminals and other devices, the amplifier module is in a multi-mode and multi-working frequency band state.
Currently, the mainstream technologies for implementing such multi-mode and multi-band include:
firstly, two or more amplifiers are switched through a switch to realize various different output power modes;
and secondly, optimizing and reconstructing output matching, and realizing output matching impedance transformation and frequency selection by means of a switch and the like.
The two methods have advantages and disadvantages, and the disadvantages mainly reflect the following aspects:
firstly, the circuit architecture is complex;
secondly, the matching structure is complicated;
thirdly, the power loss is large.
The invention provides a multi-mode control biasing circuit, provides effective multi-mode control, and has the characteristics of simple circuit structure, convenience in use, high cost performance and the like.
Therefore, in order to solve the above problems, it is necessary to provide a multi-mode control bias circuit that provides effective multi-mode control and has the features of simple circuit structure, convenient use, and high cost performance.
Disclosure of Invention
The invention aims to provide a multi-mode control bias circuit, which can control the injection current of an amplifier and adjust the static working point of the amplifier by combining the control voltage of the bias circuit and adjusting the injection current of the bias circuit, so that the invention fully utilizes the characteristic that the transconductance of a radio frequency transistor changes along with the injection current, realizes multi-mode control and amplification of various power levels, and meets the requirements of the multi-mode amplifier, thereby having the advantages of simple structure and high cost performance and solving the problems in the prior art.
In order to achieve the purpose, the invention provides the following technical scheme: a multi-mode control bias circuit includes a transistor T1, a transistor T2, a transistor T3, a transistor T4, and a radio frequency transistor, wherein,
the collector and the base of the transistor T1 are interconnected together, and the collector and the base of the transistor T3 are interconnected together;
an emitter of the transistor T1 is connected to a base of the transistor T3 and then connected in series with a resistor R2 to ground, a collector of the transistor T1 is connected to a collector of the transistor T2, an emitter of the transistor T2 is connected to an emitter of the transistor T3, and a base of the transistor T2 is connected in series with the resistor R5 and then connected to a voltage control circuit node VMODE, so that the node VMODE is controlled by a resistor R5 to turn on or off the transistor T2;
the collector of the transistor T2 is connected with a resistor R1 and then connected to a bias voltage node VBIAS, the output of the bias voltage node VBIAS is connected in series with a resistor R3 and then connected to the collector of the transistor T4, and the bias voltage node VBIAS is used for providing current for the transistor T4;
an emitter of the transistor T4 is connected with a radio frequency transistor after being connected with a resistor R4 in series, an emitter of the transistor T4 is connected with a radio frequency signal input end RFIN after being connected with a resistor R4 and a capacitor C2 in series in sequence, a base of the transistor T1 is connected with a base of a transistor T4, and the base of the transistor T1 and the base of the transistor T4 are respectively connected with a capacitor C1 in series and then grounded;
the current of a current channel formed by a node VBIAS, a resistor R1, a transistor T1, a transistor T3 and a resistor R2 is defined as I2, the current of the current channel formed by the node VBIAS, the resistor R1, a transistor T2 and a resistor R2 is defined as I3, and the current of the current channel formed by the node VBIAS, a resistor R3, the transistor T4, a resistor R4 and a radio frequency transistor is defined as I4;
when the node VMODE is at a low voltage, the transistor T2 is turned off, a current flows into the current I2, the current I2 increases, the current I4 is a mirror image current of the current I2, the current I4 increases, and the gain of the rf transistor increases;
when the node VMODE is at a high voltage, the transistor T2 is turned on, the current I2 decreases, the current I4 decreases, and the gain of the rf transistor decreases.
As an improvement of the multi-mode control bias circuit in the present invention, the transistor T1, the transistor T2, the transistor T3 and the transistor T4 are bipolar junction transistors, respectively.
As an improvement to the multi-mode control bias circuit in the present invention, the RF transistor includes an RF amplifier RF and a transistor T5, wherein the base of the RF amplifier RF is connected to the post-base reverse connection resistor R4 of the transistor T5, the collector of the RF amplifier RF and the collector of the transistor T5 are respectively connected to VCC, and the emitter of the RF amplifier RF and the emitter of the transistor T5 are respectively grounded.
As an improvement of the multi-mode control bias circuit, the resistances of the resistor R1, the resistor R2, the resistor R3 and the resistor R4 are adjustable, and are used for controlling the magnitudes of the current I2 and the current I3, and further controlling the current I4 to control the magnitude of the current of the radio frequency transistor.
As an improvement of the multi-mode control bias circuit, the capacitor C1 is a bias alternating current ground, and the capacitor C2 is an input blocking capacitor.
Compared with the prior art, the invention has the following beneficial effects:
by combining the control voltage of the bias circuit, adjusting the injection current of the bias circuit, controlling the injection current of the amplifier and adjusting the static working point of the amplifier, the invention makes full use of the characteristic that the transconductance of the radio frequency transistor changes along with the injection current, realizes multi-mode control and amplification of various power levels, and meets the requirements of the multi-mode amplifier, thereby having the advantages of simple structure and high cost performance.
Drawings
FIG. 1 is a schematic diagram of a multi-mode control bias circuit according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments, and all other embodiments obtained by a person of ordinary skill in the art without creative efforts based on the embodiments of the present invention belong to the protection scope of the present invention.
In the description of the present invention, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", "top", "bottom", "inner", "outer", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention.
As an embodiment of the present invention, a multimode control bias circuit, as shown in fig. 1, includes a transistor T1, a transistor T2, a transistor T3, a transistor T4, and a radio frequency transistor, wherein,
the collector and the base of the transistor T1 are interconnected together, and the collector and the base of the transistor T3 are interconnected together;
an emitter of the transistor T1 is connected with a base of the transistor T3 and then connected in series with a resistor R2 to be grounded, a collector of the transistor T1 is connected with a collector of the transistor T2, an emitter of the transistor T2 is connected with an emitter of the transistor T3, and a base of the transistor T2 is connected in series with the resistor R5 and then connected to a voltage control circuit node VMODE, so that the node VMODE is used for controlling and realizing the on or off of the transistor T2 through a resistor R5;
the collector of the transistor T2 is connected to the resistor R1 and then connected to the bias voltage node VBIAS, and the output of the bias voltage node VBIAS is connected in series with a resistor R3 and then connected to the collector of the transistor T4 for supplying current to the transistor T4;
an emitter of the transistor T4 is connected with a radio frequency transistor after being connected with a resistor R4 in series, an emitter of the transistor T4 is connected with a radio frequency signal input end RFIN after being connected with a resistor R4 and a capacitor C2 in series in sequence and used for receiving the on or off circuit current of the transistor T2 and providing base injection current for the radio frequency transistor to realize static current control of the radio frequency transistor, a base of the transistor T1 is connected with a base of the transistor T4, the base of the transistor T1 and the base of the transistor T4 are respectively connected with a capacitor C1 in series and then grounded, the capacitor C1 is biased alternating current ground, and the capacitor C2 is an input blocking capacitor;
the current defining the current channel composed of the node VBIAS, the resistor R1, the transistor T1, the transistor T3 and the resistor R2 is I2, the current defining the current channel composed of the node VBIAS, the resistor R1, the transistor T2 and the resistor R2 is I3, the current defining the current channel composed of the node VBIAS, the resistor R3, the transistor T4, the resistor R4 and the rf transistor is I4,
when the node VMODE is at a low voltage, the transistor T2 is turned off, a current flows into the current I2, the current I2 increases, the current I4 is a mirror current of the current I2, the current I4 increases, and the gain of the rf transistor increases;
when the node VMODE is at a high voltage, the transistor T2 is turned on, the current I2 decreases, the current I4 decreases, and the gain of the rf transistor decreases.
In an embodiment of the invention, the transistors T1, T2, T3, T4 and T5 are bipolar junction transistors, respectively.
In an embodiment of the present invention, the RF transistor includes an RF amplifier RF and a transistor T5, wherein a base of the RF amplifier RF is connected to a rear reverse resistor R4 after being connected to a base of the transistor T5, a collector of the RF amplifier RF and a collector of the transistor T5 are respectively connected to VCC, and an emitter of the RF amplifier RF and an emitter of the transistor T5 are respectively grounded.
In an embodiment of the invention, the resistances of the resistor R1, the resistor R2, the resistor R3, and the resistor R4 are adjustable, and are used to control the magnitudes of the current I2 and the current I3, and further control the current I4, so as to control the magnitude of the current of the rf transistor.
As an embodiment of the present invention, as shown in fig. 1, the collector of the transistor T1 and the base of the transistor T3 are interconnected together to provide a voltage of a 2VBE junction, i.e., an operating voltage of 2.6V, to the reference voltage pin node VRFE, while the current I2 provides a mirror current I4 to the transistor T4, the current I4 is injected to the RF amplifier tube RF and the base of the transistor T5 to provide a required bias current to the amplifier, and the sum of the current I3 and the current I2 is I1, i.e., I2+ I3= I1.
As an embodiment of the present invention, as shown in fig. 1, the node VMODE controls on and off of the transistor T2 through the resistor R5, that is, when the node VMODE is at a low voltage, the transistor T2 is turned off, no I3 is shunted, and the I1 current flows completely to form I2, at this time, as a mirror image of I2, the I4 current is increased, so as to increase the injection current, resulting in an increase in the gains of the RF amplifier tube RF and the transistor T5; when VMODE is high voltage, the transistor T2 is turned on, and the I3 shunts a part of current, so that the I2 current is reduced, and further, the I4 injection current is reduced, and thereby, the gain of the RF amplifier tube RF and the transistor T5 is reduced, and by controlling the VMODE voltage and the VBIAS voltage of the node, reasonably setting the resistances of the resistor R1, the resistor R2, the resistor R3, and the resistor R4, adjusting the current magnitudes of the I2 and the I3, and further controlling the current of the I4, the current magnitude of the RF transistor is controlled, and the incremental table shown in table 1 is obtained, so as to realize mode selection, where table 1 is as follows:
by combining the control voltage of the bias circuit, adjusting the magnitude of the injection current of the bias circuit, controlling the injection current of the amplifier and adjusting the quiescent operating point of the amplifier and utilizing the characteristic that the transconductance of the radio frequency transistor changes along with the magnitude of the injection current, the invention realizes the amplification of multi-mode control signals with different output powers under constant input power and improves the additional efficiency under low and medium output power, thereby fully utilizing the characteristic that the transconductance of the radio frequency transistor changes along with the magnitude of the injection current, realizing multi-mode control and the amplification of various power levels and meeting the requirements of the multi-mode amplifier, thereby having the advantages of simple structure and high cost performance, meanwhile, under the condition of certain input power, the gain of the radio frequency transistor can ensure to obtain different output powers, and simultaneously, because the low gain is due to the low injection current, resulting in low power consumption at low output power and thus improved efficiency at low power.
While there have been shown and described the fundamental principles and essential features of the invention and advantages thereof, it will be apparent to those skilled in the art that the invention is not limited to the details of the foregoing exemplary embodiments, but is capable of other specific forms without departing from the spirit or essential characteristics thereof; the present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein, and any reference signs in the claims are not intended to be construed as limiting the claim concerned.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.
Claims (5)
1. A multi-mode control bias circuit, comprising: the method comprises the following steps:
a transistor T1, a transistor T2, a transistor T3, a transistor T4, and a radio frequency transistor, wherein,
the collector and the base of the transistor T1 are interconnected together, and the collector and the base of the transistor T3 are interconnected together;
an emitter of the transistor T1 is connected to a base of the transistor T3 and then connected in series with a resistor R2 to ground, a collector of the transistor T1 is connected to a collector of the transistor T2, an emitter of the transistor T2 is connected to an emitter of the transistor T3, and a base of the transistor T2 is connected in series with the resistor R5 and then connected to a voltage control circuit node VMODE, so that the node VMODE is controlled by a resistor R5 to turn on or off the transistor T2;
the collector of the transistor T2 is connected with a resistor R1 and then connected to a bias voltage node VBIAS, the output of the bias voltage node VBIAS is connected in series with a resistor R3 and then connected to the collector of the transistor T4, and the bias voltage node VBIAS is used for providing current for the transistor T4;
an emitter of the transistor T4 is connected with a radio frequency transistor after being connected with a resistor R4 in series, an emitter of the transistor T4 is connected with a radio frequency signal input end RFIN after being connected with a resistor R4 and a capacitor C2 in series in sequence, a base of the transistor T1 is connected with a base of a transistor T4, and the base of the transistor T1 and the base of the transistor T4 are respectively connected with a capacitor C1 in series and then grounded;
the current of a current channel formed by a node VBIAS, a resistor R1, a transistor T1, a transistor T3 and a resistor R2 is defined as I2, the current of the current channel formed by the node VBIAS, the resistor R1, a transistor T2 and a resistor R2 is defined as I3, and the current of the current channel formed by the node VBIAS, a resistor R3, the transistor T4, a resistor R4 and a radio frequency transistor is defined as I4;
when the node VMODE is at a low voltage, the transistor T2 is turned off, a current flows into the current I2, the current I2 increases, the current I4 is a mirror image current of the current I2, the current I4 increases, and the gain of the rf transistor increases;
when the node VMODE is at a high voltage, the transistor T2 is turned on, the current I2 decreases, the current I4 decreases, and the gain of the rf transistor decreases.
2. The multi-mode control bias circuit of claim 1, wherein: the transistor T1, the transistor T2, the transistor T3, and the transistor T4 are bipolar junction transistors, respectively.
3. The multi-mode control bias circuit of claim 1, wherein: the radio frequency transistor comprises a radio frequency amplifying tube RF and a transistor T5, wherein the base electrode of the radio frequency amplifying tube RF is connected with a rear reverse connection resistor R4 of the base electrode of the transistor T5, the collector electrode of the radio frequency amplifying tube RF and the collector electrode of the transistor T5 are respectively connected with VCC, and the emitter electrode of the radio frequency amplifying tube RF and the emitter electrode of the transistor T5 are respectively grounded.
4. The multi-mode control bias circuit of claim 1, wherein: the resistance values of the resistor R1, the resistor R2, the resistor R3 and the resistor R4 are adjustable and are used for controlling the current I2 and the current I3, further controlling the current I4 and achieving the purpose of controlling the current of the radio frequency transistor.
5. The multi-mode control bias circuit of claim 1, wherein: the capacitor C1 is a bias AC ground, and the capacitor C2 is an input DC blocking capacitor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110110256.8A CN112436808A (en) | 2021-01-27 | 2021-01-27 | Multi-mode control bias circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110110256.8A CN112436808A (en) | 2021-01-27 | 2021-01-27 | Multi-mode control bias circuit |
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| CN112436808A true CN112436808A (en) | 2021-03-02 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103441738A (en) * | 2013-08-28 | 2013-12-11 | 贵州中科汉天下电子有限公司 | Multimode radio frequency power amplifier circuit and current bias method thereof |
| CN203457108U (en) * | 2013-08-16 | 2014-02-26 | 江苏博纳雨田通信电子有限公司 | Adaptive bias circuit applicable to CMOS (Complementary Metal Oxide Semiconductor) radio frequency power amplifier and amplifier |
| CN207150541U (en) * | 2017-09-20 | 2018-03-27 | 丹阳恒芯电子有限公司 | Multimode multi-frequency radio frequency power amplifier with intelligent bias |
| CN111726093A (en) * | 2019-03-20 | 2020-09-29 | 株式会社村田制作所 | Power amplifying circuit |
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2021
- 2021-01-27 CN CN202110110256.8A patent/CN112436808A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203457108U (en) * | 2013-08-16 | 2014-02-26 | 江苏博纳雨田通信电子有限公司 | Adaptive bias circuit applicable to CMOS (Complementary Metal Oxide Semiconductor) radio frequency power amplifier and amplifier |
| CN103441738A (en) * | 2013-08-28 | 2013-12-11 | 贵州中科汉天下电子有限公司 | Multimode radio frequency power amplifier circuit and current bias method thereof |
| CN207150541U (en) * | 2017-09-20 | 2018-03-27 | 丹阳恒芯电子有限公司 | Multimode multi-frequency radio frequency power amplifier with intelligent bias |
| CN111726093A (en) * | 2019-03-20 | 2020-09-29 | 株式会社村田制作所 | Power amplifying circuit |
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Application publication date: 20210302 |