CN112436062B - Composite electrode for tellurium-zinc-cadmium radiation detector and preparation method thereof - Google Patents
Composite electrode for tellurium-zinc-cadmium radiation detector and preparation method thereof Download PDFInfo
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- 239000002131 composite material Substances 0.000 title claims abstract description 48
- 230000005855 radiation Effects 0.000 title claims abstract description 46
- 238000002360 preparation method Methods 0.000 title claims abstract description 23
- 229910052793 cadmium Inorganic materials 0.000 title claims abstract description 12
- QWUZMTJBRUASOW-UHFFFAOYSA-N cadmium tellanylidenezinc Chemical compound [Zn].[Cd].[Te] QWUZMTJBRUASOW-UHFFFAOYSA-N 0.000 claims abstract description 71
- 239000010409 thin film Substances 0.000 claims abstract description 69
- 229910005913 NiTe Inorganic materials 0.000 claims abstract description 48
- 239000000463 material Substances 0.000 claims abstract description 40
- 239000013078 crystal Substances 0.000 claims abstract description 29
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 19
- 238000005516 engineering process Methods 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims description 17
- 238000004544 sputter deposition Methods 0.000 claims description 15
- 238000005498 polishing Methods 0.000 claims description 14
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 9
- 239000010408 film Substances 0.000 claims description 7
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 239000008367 deionised water Substances 0.000 claims description 5
- 229910021641 deionized water Inorganic materials 0.000 claims description 5
- 238000005566 electron beam evaporation Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- 238000004364 calculation method Methods 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 238000007664 blowing Methods 0.000 claims 1
- 229910001873 dinitrogen Inorganic materials 0.000 claims 1
- 238000004506 ultrasonic cleaning Methods 0.000 claims 1
- 239000000853 adhesive Substances 0.000 abstract description 3
- 230000001070 adhesive effect Effects 0.000 abstract description 3
- 238000002425 crystallisation Methods 0.000 abstract description 3
- 230000008025 crystallization Effects 0.000 abstract description 3
- 239000010931 gold Substances 0.000 description 33
- 229910052737 gold Inorganic materials 0.000 description 11
- 229910052759 nickel Inorganic materials 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 238000001514 detection method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000013077 target material Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000005251 gamma ray Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000002905 metal composite material Substances 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a composite electrode for a cadmium zinc telluride radiation detector, which comprises: the electrode comprises a NiTe-based thin film electrode growing on the surface of the tellurium-zinc-cadmium crystal material, a Ni thin film electrode growing on the surface of the NiTe-based thin film electrode and an Au thin film electrode growing on the surface of the Ni thin film electrode. Compared with the prior art, the composite electrode for the cadmium zinc telluride radiation detector can form better ohmic contact on the surface of a cadmium zinc telluride crystal material, has lower contact resistance, and obviously improves the charge collection performance of the cadmium zinc telluride radiation detector. In addition, the invention also discloses a preparation method of the composite electrode for the cadmium zinc telluride radiation detector. Compared with the prior art, the preparation method of the composite electrode for the cadmium zinc telluride radiation detector adopts the magnetron sputtering technology to prepare the NiTe-based thin film electrode, has good crystallization quality, strong adhesive force, high conductivity, high speed and stable quality, and has low cost of batch growth by the magnetron sputtering technology.
Description
Technical Field
The invention belongs to the technical field of radiation detectors, and particularly relates to a composite electrode for a cadmium zinc telluride radiation detector and a preparation method thereof.
Background
Cadmium Zinc Telluride (CZT) semiconductor is a room-temperature X-ray and gamma-ray detection material with excellent performance, compared with common semiconductor materials (Si, ge and the like), CZT has the characteristics of large forbidden bandwidth, large atomic number, high resistivity and high carrier transport, so that the CZT detector can work at room temperature, a refrigeration system is omitted, and therefore the CZT detector is small in size, convenient to use, high in energy spectrum resolution capability and high in detection efficiency. The CZT-based radiation detector has wide application prospects in the fields of basic science, safety detection, space research, medical diagnosis, industrial flaw detection and the like at present.
The high-resistance CZT is an excellent material for manufacturing an X-ray and gamma-ray radiation detector, and the manufacturing of a surface ohmic electrode of the high-resistance CZT is an indispensable process for manufacturing the radiation detector. In addition to the crystal quality of CZT, the performance of CZT radiation detectors is also closely related to the performance of the ohmic contact electrodes of the device. Therefore, the ideal ohmic contact preparation process of high-resistance CZT is one of the key factors for obtaining a high-performance radiation detector.
Currently, CZT radiation detectors generally employ metal electrodes or metal composite electrodes, such as indium, gold/titanium composite electrodes, and the like. However, these materials have not been able to form ideal ohmic contacts to CZT due to its high resistance and high work function.
In view of the above, it is necessary to provide a composite electrode for a cadmium zinc telluride radiation detector having an ideal ohmic contact and a method for preparing the same.
Disclosure of Invention
The invention aims to: the defects of the prior art are overcome, and the composite electrode for the cadmium zinc telluride radiation detector with ideal ohmic contact and the preparation method thereof are provided.
In order to achieve the above object, the present invention provides a composite electrode for a cadmium zinc telluride radiation detector, comprising: the electrode comprises a NiTe-based thin film electrode growing on the surface of the tellurium-zinc-cadmium crystal material, a Ni thin film electrode growing on the surface of the NiTe-based thin film electrode and an Au thin film electrode growing on the surface of the Ni thin film electrode.
The invention is used in the composite electrode of the tellurium-zinc-cadmium radiation detector, niTe is an important semiconductor material, has the semimetal characteristic of low resistance and is very suitable for being used as an ohmic contact buffer layer; ni is a rare metal having a high work function and being inexpensive, and is likely to form ohmic contact with a p-type semiconductor having a high work function. Therefore, the NiTe/Ni/Au composite electrode can form good ohmic contact with CZT, has lower contact resistance, and obviously improves the performance of the cadmium zinc telluride radiation detector.
As an improvement of the composite electrode for the cadmium zinc telluride radiation detector, the thickness of the NiTe-based thin film electrode is 10-500nm, the thickness of the Ni thin film electrode is 10-500nm, and the thickness of the Au thin film electrode is 10-200 nm.
In order to achieve the above object, the present invention further provides a method for preparing a composite electrode for a cadmium zinc telluride radiation detector, which comprises the following steps:
1) Polishing two surfaces of the tellurium-zinc-cadmium crystal material until the surfaces are mirror surfaces;
2) Growing a NiTe-based thin film electrode on the surface of the polished tellurium-zinc-cadmium crystal material obtained in the step 1) by adopting a magnetron sputtering technology; and
3) Sequentially growing a Ni film electrode and an Au film electrode on the surface of the NiTe base film obtained in the step 2) by adopting a magnetron sputtering technology or an electron beam evaporation technology.
As an improvement of the preparation method of the composite electrode for the cadmium zinc telluride radiation detector, the polishing in the step 1) is mechanical polishing or chemical mechanical polishing.
As an improvement of the preparation method of the composite electrode for the cadmium zinc telluride radiation detector, cu and/or Ag is doped in the NiTe-based thin film electrode grown in the step 2).
As an improvement of the preparation method of the composite electrode for the cadmium zinc telluride radiation detector, in the step 2) of growing the NiTe-based thin film electrode, the doping amount of the NiTe-based thin film is 1-20 percent by taking the mass percentage of the doped element material relative to the total mass of the zinc oxide-based thin film as a doping amount calculation method.
As an improvement of the preparation method of the composite electrode for the cadmium zinc telluride radiation detector, argon is adopted as the sputtering atmosphere in the magnetron sputtering technology in the step 2).
As an improvement of the preparation method of the composite electrode for the cadmium zinc telluride radiation detector, the sputtering power of the magnetron sputtering technology in the step 2) is 10W-150W.
As an improvement of the preparation method of the composite electrode for the cadmium zinc telluride radiation detector, the sputtering temperature of the magnetron sputtering technology in the step 2) is between room temperature and 600 ℃.
As an improvement of the preparation method of the composite electrode for the cadmium zinc telluride radiation detector, after the step 1), the polished cadmium zinc telluride crystal material is respectively cleaned by ultrasound in acetone, ethanol and deionized water, and then is dried by high-purity nitrogen.
Compared with the prior art, the composite electrode for the cadmium zinc telluride radiation detector and the preparation method thereof have the advantages that:
1. the existing CZT radiation detector generally adopts metal electrodes, such as gold and gold/titanium composite electrodes. The composite electrode for the cadmium zinc telluride radiation detector adopts the NiTe/Ni/Au composite electrode, the NiTe/Ni/Au composite electrode can form better ohmic contact on the surface of CZT, the contact resistance is lower, and the charge collection performance of the radiation detector is obviously improved.
2. The preparation method of the composite electrode for the cadmium zinc telluride radiation detector adopts the magnetron sputtering technology to prepare the NiTe-based thin film electrode, has good crystallization quality, strong adhesive force, high conductivity, high speed and stable quality, and has low cost of batch growth by the magnetron sputtering technology.
Drawings
The composite electrode for cadmium zinc telluride radiation detector and the preparation method thereof according to the present invention are described in detail below with reference to the accompanying drawings and the specific embodiments, wherein:
fig. 1 is a schematic structural diagram of a composite electrode for a cadmium zinc telluride radiation detector according to the present invention.
Detailed Description
In order to make the objects, technical solutions and technical effects of the present invention more clear, the present invention will be further described in detail with reference to the accompanying drawings and the detailed description. It should be understood that the detailed description and specific examples, while indicating the preferred embodiment of the invention, are intended for purposes of illustration only and are not intended to limit the scope of the invention.
Referring to fig. 1, the composite electrode for the cadmium zinc telluride radiation detector of the present invention includes: the electrode comprises a NiTe-based thin film electrode growing on the surface of a tellurium-zinc-cadmium crystal material, a Ni thin film electrode growing on the surface of the NiTe-based thin film electrode and an Au thin film electrode growing on the surface of the Ni thin film electrode, wherein the thickness of the NiTe-based thin film electrode is 10-500nm, the thickness of the Ni thin film electrode is 10-500nm, and the thickness of the Au thin film electrode is 10-200 nm.
The following describes in detail the method for manufacturing the composite electrode for a cadmium zinc telluride radiation detector according to the present invention with reference to the examples.
Example 1
1) Taking a piece of CZT crystal material with good quality, and mechanically polishing the upper surface and the lower surface of the CZT crystal material for 1 hour by using alumina polishing powder with the granularity of 0.03 mu m until the surfaces are completely flat and mirror surface effect is presented; 2) Ultrasonically cleaning the polished CZT crystal material in acetone, ethanol and deionized water respectively for 15 minutes, and drying by using high-purity nitrogen; 3) Growing a NiTe-based thin film electrode on the lower surface of the polished and cleaned CZT crystal material by adopting a radio frequency magnetron sputtering method, wherein a target material is a NiTe target doped with copper (Cu), the mass percentage of the mass of the doped element material relative to the total mass of the NiTe-based thin film is used as a doping amount calculation method, the doping amount of Cu is 5wt.%, the thickness of the thin film is 100nm, the sputtering atmosphere is argon, the sputtering power is 150W, and the sputtering temperature is room temperature; 4) And sequentially growing Ni and Au thin film electrodes on the surface of the obtained NiTe thin film by adopting an electron beam evaporation method, wherein the thicknesses of the Ni and Au thin film electrodes are respectively 100nm and 50nm, and finally obtaining a composite electrode structure formed by sequentially laminating and combining the NiTe thin film, the Ni thin film electrode and the Au thin film electrode.
Analysis of experimental tests
The contact resistivity of the NiTe/Ni/Au composite electrode and the CZT crystal material is measured by using a transmission line model method, and the test result shows that: the contact resistivity obtained was 0.11. Omega. Cm 2 The contact resistivity of the Au electrode and the CZT crystal material is far smaller than that of a common Au electrode, and the good ohmic contact characteristic is achieved.
Example 2
1) Taking a piece of CZT crystal material with good quality, and mechanically polishing the upper surface and the lower surface of the CZT crystal material for 1 hour by using alumina polishing powder with the granularity of 0.03 mu m until the surfaces are completely flat and mirror surface effect is presented; 2) Ultrasonically cleaning the polished CZT crystal material in acetone, ethanol and deionized water for 15 minutes respectively, and drying by using high-purity nitrogen; 3) Growing a NiTe-based thin film electrode on the lower surface of the polished and cleaned CZT crystal material by adopting a radio frequency magnetron sputtering technology, wherein a target material is a silver (Ag) -doped NiTe target, a method is calculated by taking the mass percentage of the mass of an element-doped material relative to the total mass of the NiTe-based thin film as a doping amount, the doping amount of Ag is 8wt.%, the thickness of the thin film is 100nm, the sputtering atmosphere is argon, the sputtering power is 150W, and the sputtering temperature is room temperature; 4) And sequentially growing Ni and Au thin film electrodes on the surface of the obtained NiTe thin film by adopting an electron beam evaporation method, wherein the thicknesses of the Ni and Au thin film electrodes are respectively 100nm and 50nm, and finally obtaining a composite electrode structure formed by sequentially laminating and combining the NiTe thin film, the Ni thin film electrode and the Au thin film electrode.
Analysis of experimental tests
The contact resistivity of the NiTe/Ni/Au composite electrode and the CZT crystal material is measured by using a transmission line model method, and the test result shows that: the contact resistivity obtained was 0.09. Omega. Cm 2 The contact resistivity of the Au electrode and the CZT crystal material is far smaller than that of a common Au electrode, and the good ohmic contact characteristic is achieved.
Example 3
1) Taking a piece of CZT crystal material with good quality, and mechanically polishing the upper surface and the lower surface of the CZT crystal material for 1 hour by using alumina polishing powder with the granularity of 0.03 mu m until the surfaces are completely flat and mirror surface effect is presented; 2) Ultrasonically cleaning the polished CZT crystal material in acetone, ethanol and deionized water for 15 minutes respectively, and drying by using high-purity nitrogen; 3) And (2) growing a NiTe-based thin film electrode on the lower surface of the polished and cleaned CZT crystal material by adopting a radio frequency magnetron sputtering technology, wherein the used target material is a silver (Ag) -doped NiTe target, the doping amount of Ag is 8 wt% according to the mass percentage of the doped element material to the total mass of the NiTe-based thin film as a doping amount calculation method. The thickness of the film is 80nm, the sputtering atmosphere is argon, the sputtering power is 150W, and the sputtering temperature is room temperature. 4) And sequentially growing Ni and Au thin film electrodes on the surface of the obtained NiTe thin film by adopting an electron beam evaporation method, wherein the thicknesses of the Ni and Au thin film electrodes are respectively 80nm and 50nm, and finally obtaining a composite electrode structure formed by sequentially laminating and combining the NiTe thin film, the Ni thin film electrode and the Au thin film electrode.
Analysis of experimental tests
The contact resistivity of the NiTe/Ni/Au composite electrode and the CZT crystal material is measured by using a transmission line model method, and the test result shows that: the obtained contact resistivity was 0.08. Omega. Cm 2 The contact resistivity of the Au electrode and the CZT material is far smaller than that of the common Au electrode and the CZT material, and the good ohmic contact characteristic is achieved.
In combination with the above detailed description of the embodiments of the present invention, it can be seen that, compared with the prior art, the composite electrode for a cadmium zinc telluride radiation detector and the preparation method thereof according to the present invention have at least the following advantages:
1. the existing CZT radiation detector generally adopts metal electrodes, such as gold and gold/titanium composite electrodes. The composite electrode for the cadmium zinc telluride radiation detector adopts the NiTe/Ni/Au composite electrode, the NiTe/Ni/Au composite electrode can form better ohmic contact on the surface of CZT, the contact resistance is lower, and the charge collection performance of the radiation detector is obviously improved.
2. The preparation method of the composite electrode for the cadmium zinc telluride radiation detector adopts the magnetron sputtering technology to prepare the NiTe-based thin film electrode, has good crystallization quality, strong adhesive force, high conductivity, high speed and stable quality, and the magnetron sputtering technology has low cost of batch growth.
Appropriate changes and modifications to the embodiments described above will become apparent to those skilled in the art from the disclosure and teachings of the foregoing description. Therefore, the present invention is not limited to the specific embodiments disclosed and described above, and modifications and variations of the present invention are also intended to fall within the scope of the appended claims. Furthermore, although specific terms are employed herein, they are used in a generic and descriptive sense only and not for purposes of limitation.
Claims (9)
1. A composite electrode for a cadmium zinc telluride radiation detector, the composite electrode comprising: a NiTe-based thin film electrode growing on the surface of the tellurium-zinc-cadmium crystal material, a Ni thin film electrode growing on the surface of the NiTe-based thin film electrode, and an Au thin film electrode growing on the surface of the Ni thin film electrode; the NiTe-based thin film electrode is doped with Cu and/or Ag.
2. The composite electrode for a cadmium zinc telluride radiation detector as set forth in claim 1 wherein the thickness of said NiTe-based thin film electrode is 10 to 500nm, the thickness of said ni thin film electrode is 10 to 500nm, and the thickness of said au thin film electrode is 10 to 200nm.
3. A preparation method of a composite electrode for a cadmium zinc telluride radiation detector is characterized by comprising the following steps:
1) Polishing two surfaces of the tellurium-zinc-cadmium crystal material;
2) Growing a NiTe-based thin film electrode on the surface of the polished tellurium-zinc-cadmium crystal material obtained in the step 1) by adopting a magnetron sputtering technology, and doping Cu and/or Ag into the grown NiTe-based thin film electrode; and
3) Sequentially growing a Ni film electrode and an Au film electrode on the surface of the NiTe base film obtained in the step 2) by adopting a magnetron sputtering technology or an electron beam evaporation technology.
4. The production method according to claim 3, wherein the polishing in step 1) is mechanical polishing or chemical mechanical polishing.
5. The method of claim 3, wherein the NiTe-based thin film electrode grown in the step 2) is doped with the NiTe-based thin film in an amount of 1 to 20wt.% in accordance with a calculation method in which the doping amount is calculated as a mass percentage of the material doped with the element with respect to the total mass of the zinc oxide-based thin film.
6. The method according to claim 3, wherein argon is used as a sputtering atmosphere in the step 2) magnetron sputtering technique.
7. The preparation method according to claim 3, wherein the sputtering power of the magnetron sputtering technique in the step 2) is 10W-150W.
8. The preparation method according to claim 3, wherein the sputtering temperature of the magnetron sputtering technique in the step 2) is room temperature to 600 ℃.
9. The preparation method according to any one of claims 3 to 8, wherein after the step 1), the polished tellurium-zinc-cadmium crystal material is subjected to ultrasonic cleaning in acetone, ethanol and deionized water respectively, and then is dried by blowing with high-purity nitrogen gas.
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| PCT/CN2021/103553 WO2022033222A1 (en) | 2020-12-01 | 2021-06-30 | Composite electrode for tellurium-zinc-cadmium radiation detector and preparation method therefor |
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| CN113049096A (en) * | 2021-03-11 | 2021-06-29 | 中国科学院上海技术物理研究所 | Nickel telluride terahertz detector integrated with room-temperature periodic logarithmic antenna and preparation method |
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| CN2452133Y (en) * | 2000-10-19 | 2001-10-03 | 中国科学院上海技术物理研究所 | Ohmic electrode for Te Zn Cd semiconductor material |
| CA2541256A1 (en) * | 2006-02-22 | 2007-08-22 | Redlen Technologies Inc. | Shielding electrode for monolithic radiation detector |
| CA2561630A1 (en) * | 2006-02-22 | 2007-08-22 | Redlen Technologies | Segmented radiation detector with side shielding cathode |
| GB0908583D0 (en) * | 2009-05-19 | 2009-06-24 | Durham Scient Crystals Ltd | Semiconductor device contacts |
| JP2013057108A (en) * | 2011-09-09 | 2013-03-28 | Ulvac Japan Ltd | Multiple sputtering apparatus |
| US20130074914A1 (en) * | 2011-09-26 | 2013-03-28 | General Electric Company | Photovoltaic devices |
| CN102683490A (en) * | 2012-05-09 | 2012-09-19 | 上海大学 | Method for preparing In heavily-doped Au/In ohmic contact electrode on surface of cadmium zinc telluride crystal |
| CN103811579B (en) * | 2014-02-13 | 2016-09-28 | 吉林大学 | A kind of flexible CdTe thin film solar cell and preparation method thereof |
| EP3165947B1 (en) * | 2014-07-03 | 2021-11-24 | JX Nippon Mining & Metals Corporation | Radiation detector ubm electrode structure body, radiation detector, and method of manufacturing same |
| GB201520069D0 (en) * | 2015-11-13 | 2015-12-30 | Univ Liverpool | Thin film solar cell |
| CN208225895U (en) * | 2018-05-31 | 2018-12-11 | 苏州西奇狄材料科技有限公司 | The novel C ZT radiation detector structure of carrier-free injection |
| US11908956B2 (en) * | 2019-02-27 | 2024-02-20 | Trinamix Gmbh | Optical sensor and detector for an optical detection |
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| CN112436062A (en) | 2021-03-02 |
| WO2022033222A1 (en) | 2022-02-17 |
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