CN112424696A - Gas component monitoring device of gas laser - Google Patents
Gas component monitoring device of gas laser Download PDFInfo
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- CN112424696A CN112424696A CN201980048019.4A CN201980048019A CN112424696A CN 112424696 A CN112424696 A CN 112424696A CN 201980048019 A CN201980048019 A CN 201980048019A CN 112424696 A CN112424696 A CN 112424696A
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- 238000012806 monitoring device Methods 0.000 title claims abstract description 33
- 239000000126 substance Substances 0.000 claims abstract description 17
- 238000012544 monitoring process Methods 0.000 claims description 49
- 230000003287 optical effect Effects 0.000 claims description 9
- 239000010453 quartz Substances 0.000 claims description 5
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 238000007599 discharging Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 157
- 239000004065 semiconductor Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70025—Production of exposure light, i.e. light sources by lasers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7049—Technique, e.g. interferometric
- G03F9/7053—Non-optical, e.g. mechanical, capacitive, using an electron beam, acoustic or thermal waves
- G03F9/7057—Gas flow, e.g. for focusing, leveling or gap setting
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
The present invention relates to a gas laser monitoring device, which is connected to a gas laser generation chamber side so as to receive the different-type gas flowing in from the gas laser generation chamber side and monitor the components of the different-type gas contained in the reaction space of the gas laser light emission chamber, and therefore, when an unnecessary substance is introduced or generated in the gas laser generation chamber, the monitoring device can quickly grasp the situation and take measures for the situation. Accordingly, a technique capable of ensuring the stability of the laser beam is disclosed.
Description
Technical Field
The present invention relates to a gas component monitoring device for a gas laser, and more particularly, to a gas component monitoring device for a gas laser capable of monitoring components of a different gas present in a chamber for generating laser light.
Background
In a semiconductor or display device manufacturing process, an exposure apparatus is used in an exposure process in order to selectively irradiate a photosensitive film with light in a certain pattern to form a pattern. Since the exposure apparatus requires high precision required for manufacturing semiconductor devices and displays, a laser is selected as a light source.
An exposure apparatus using a laser as a light source includes a gas laser beam generation chamber filled with a specific gas and generating a laser beam by interaction between gases excited by an electrode, and the specific gases supplied to the inside of the gas laser beam generation chamber must be supplied at an optimum combination ratio and a constant pressure to generate a desired laser beam in order to react with each other.
When laser light is generated in a gas laser generation chamber, the amount of impurities increases in the laser generation chamber due to high-energy plasma generated from a substance in the chamber and a reaction gas as time passes.
These impurities reduce the vibration efficiency of the gas laser, reduce or make unstable the laser output, and change the profile of the laser beam. As described above, if the light output of the laser beam becomes unstable or the profile changes, there is a big problem that the defect rate of the semiconductor manufacturing process can only be increased.
Therefore, there is an urgent need for a technique capable of quickly detecting and dealing with a change in the gas laser generation chamber such as introduction or generation of impurities.
Disclosure of Invention
Technical problem to be solved
In order to solve the above-described conventional problems, an object of the present invention is to provide a gas component monitoring device for a gas laser, which can continuously monitor and deal with a situation in a gas laser generation chamber in which a laser beam is generated using a mixed gas containing different types of gases so that the substance can be quickly grasped when introducing or generating an unnecessary substance in the gas laser generation chamber.
Means for solving the problems
In order to achieve the above object, according to an embodiment of the present invention, there is provided a gas component monitoring device for a gas laser, which is used by being attached to a gas laser beam generation chamber providing a reaction space for accommodating a mixed gas containing different types of gases so as to generate a gas laser beam, wherein the gas component monitoring device for a gas laser is connected to the gas laser beam generation chamber side so as to receive the mixed gas flowing in from the gas laser beam generation chamber, and monitors a component of the mixed gas accommodated in the reaction space of the gas laser beam generation chamber.
Wherein another feature may also be a gas component monitoring device of the gas laser that obtains information about introduction or generation or non-introduction of the component or unnecessary substance of the mixed gas contained in the reaction space by spectroscopic means.
Still another feature is a gas composition monitoring device of the gas laser, including: an inflow pipe having one side coupled to the gas laser generation chamber so as to be able to communicate with the gas laser generation chamber; and a monitoring chamber coupled to be capable of communicating with the other side of the inflow pipe and providing an analysis space receiving and accommodating the mixed gas flowing in through the inflow pipe.
Still another feature of the present invention is a gas component monitoring device for a gas laser, comprising: an electrode installed in the monitoring chamber, receiving the supplied power from the outside to form plasma in the analysis space in the monitoring chamber.
Still another feature of the present invention is a gas component monitoring device for a gas laser, comprising: a spectrometer disposed at one side of the monitoring chamber and configured to obtain information on a composition of the mixed gas or introduction or generation or non-generation of an unnecessary substance from the plasma formed in the analysis space within the monitoring chamber.
Wherein another feature may also be a gas composition monitoring device of the gas laser, further comprising: and an outflow pipe having one side end coupled to the monitoring chamber so as to be capable of communicating with the monitoring chamber, and guiding a movement of discharging the mixed gas from the reaction space.
In the gas laser generating chamber, an exhaust pipe capable of exhausting the mixed gas from the reaction space to the outside may be provided, and the other end of the outflow pipe may be coupled to the exhaust pipe so as to be capable of communicating with the exhaust pipe.
Further, another feature may be that the other side end of the outflow pipe is combined with the gas laser generation chamber to communicate the monitor chamber with the gas laser generation chamber.
Further, the gas laser beam generation chamber may be provided with an exhaust tube capable of exhausting the different gas from the reaction space to the outside, the outflow tube may be coupled to the exhaust tube so as to be capable of communicating therewith, and the outflow tube may be provided with a switching valve for allowing the mixed gas contained in the monitoring chamber to selectively flow out to either one of the gas laser beam generation chamber and the exhaust tube.
Wherein another feature may also be to provide the monitoring chamber with an optical window to enable observation of the plasma formed in the analysis space within the monitoring chamber.
Further, the optical window may be formed of quartz (quartz) or sapphire (sapphire) so as to have chemical durability and ensure a wavelength range band of light transmitted to the spectroscope side to be equal to or more than a predetermined level.
ADVANTAGEOUS EFFECTS OF INVENTION
According to the gas component monitoring device of the gas laser of the present invention, the component of the mixed gas in the gas laser generation chamber can be continuously monitored. Therefore, when an unnecessary substance is introduced or generated in the gas laser generation chamber, it is possible to quickly grasp the situation and take countermeasures, which contributes to ensuring the output stability of the laser beam, and to maintaining the profile (profile) of the generated laser beam to a certain degree, thereby contributing to the improvement of the quality of a semiconductor, a flat panel display, or the like.
Drawings
Fig. 1 is a view schematically showing a gas laser generation chamber for explaining a gas composition monitoring apparatus for a gas laser according to an embodiment of the present invention.
Fig. 2 is a diagram schematically showing the configuration of a gas composition monitoring apparatus using a gas laser according to an embodiment of the present invention.
Detailed Description
Hereinafter, preferred embodiments will be described with reference to the accompanying drawings in order to more specifically understand the present invention.
Fig. 1 is a view schematically showing a gas laser generation chamber for explaining a gas composition monitoring apparatus of a gas laser according to an embodiment of the present invention, and fig. 2 is a view schematically showing a configuration of the gas composition monitoring apparatus using the gas laser according to the embodiment of the present invention.
As can be seen from fig. 1 and 2, the gas composition monitoring device for a gas laser according to the embodiment of the present invention can be used by being attached to a gas laser generation chamber, and the overall system 10 includes the gas laser generation chamber and the gas composition monitoring device for a gas laser.
It should be noted that the expression "gas component monitoring of a gas laser" means monitoring of a component of a mixed gas including a different gas existing in a chamber that generates the gas laser.
In addition, for convenience of explanation and understanding, the "gas component monitoring apparatus of a gas laser" according to the embodiment of the present invention will be explained below simply as "component monitoring apparatus".
The gas laser generating chamber 100 provides a reaction space for accommodating a mixed gas including different kinds of gases so as to generate a gas laser.
Such a gas laser beam generation chamber 100 is provided with a plurality of gas supply pipes 110 so as to supply different types of gases from the outside into the reaction space, and the respective gases are supplied to the reaction space in the gas laser beam generation chamber 100 while moving along the gas supply pipes 110 and mixed in the reaction space.
The gas laser generation chamber 100 is connected to a discharge pipe 120, and the mixed gas in the gas laser generation chamber 100 is discharged to the outside through the discharge pipe 120. Therefore, the gas can be maintained at a pressure generated by the mixed gas at a certain level in the reaction space in the laser beam generation chamber 100.
Neon (Ne), xenon (Xe), hydrogen chloride (Hcl), or the like can be used as the different gas to be supplied to the gas laser generation chamber 100, and the pressure in the reaction space is preferably maintained at 1 to 6 atmospheres.
As can be seen from fig. 1, the gas laser beam generation chamber 100 is provided with a metal electrode for generating laser beam by using Power supplied from a Power supply (Power supply), and a gas circulation fan (gas circulation fan) for uniformly mixing and distributing different types of gases in the reaction space in the gas laser beam generation chamber 100.
Such a gas laser beam generation chamber 100 contains a mixed gas, and when power is supplied to the metal electrode, laser light is generated and emitted (output) to the front of the gas laser beam generation chamber 100.
In this way, the composition of the mixed gas containing different types of gases is monitored by the composition monitoring device, so that the laser light is stably generated in the gas laser generation chamber 100, and the introduction or the presence of an unnecessary substance can be grasped.
The composition monitoring device is connected to the gas laser generation chamber 100 side so as to receive the inflow mixed gas from the gas laser generation chamber 100 side and monitor the composition of the different gas contained in the reaction space of the gas laser generation chamber 100 or monitor the introduction or generation of an unnecessary substance.
Such a composition monitoring device preferably uses spectroscopic means to be able to obtain information about the composition of the different gas contained in the reaction space within the gas laser generation chamber 100 or information about the introduction or generation or absence of an unnecessary substance.
Such a composition monitoring apparatus preferably includes an inflow tube 210, a monitoring chamber 200, and an electrode 230, and preferably further includes a spectrometer 250 and an outflow tube 220.
The inflow pipe 210 may be coupled in such a manner that one side communicates with the gas laser generation chamber 100. And the other side is combined with the monitoring room 200. Therefore, the mixed gas in the reaction space in the gas laser generation chamber 100 flows into the monitor chamber 200 through the inflow pipe 210.
The monitoring chamber 200 and the other side of the inflow pipe 210 may be communicatively coupled. Such inflow pipes 210 may be one or more. Among them, it is preferable that a gas regulator 310 such as an orifice or a mass flow controller (mass flow controller) is attached to the inflow pipe 210 in order to regulate the amount of the gas flowing in. Also, the monitor chamber 200 is provided therein with an analysis space that receives the introduced different gas from the gas laser generation chamber 100 side through the inflow pipe 210.
Preferably, an electrode 230 is installed in the monitoring chamber 200. When power is supplied from the outside to the electrode 230, plasma is formed in the analysis space in the monitoring chamber 200 into which the mixed gas flows.
Preferably, the monitoring chamber 200 is equipped with an optical window 240 to enable the spectrometer 250 to observe the plasma formed in the analysis space within the monitoring chamber 200.
Among them, it is preferable that the optical window 240 is formed of quartz (quartz) or sapphire (sapphire) material having physical and chemical durability so that a wavelength band of light that can be transmitted to the spectrometer side 250 is secured or provided to a certain extent or more.
The spectrometer 250 is disposed at one side of the monitoring chamber 200. That is, the optical window 240 of the monitoring chamber 200 is disposed so as to receive light emitted therefrom.
Alternatively, an embodiment in which an optical fiber is disposed between the optical window 240 and the spectroscope 250 and light is transmitted through the optical fiber is also sufficient.
Light emitted from the plasma formed in the analysis space in the monitor chamber 200 is transmitted through the optical window 240 and enters the spectrometer 250. The spectroscope 250 obtains information on the composition of the mixed gas in the monitoring chamber 200 by the light incident to the spectroscope 250.
In this manner, the introduction and the occurrence of the components or the component ratios of the different gases in the gas laser beam generation chamber 100 can be grasped and continuously monitored from the information on the components of the mixed gas obtained by the spectroscope 250.
The outflow pipe 220 is formed in such a manner that the mixed gas moves and flows out from the monitoring chamber 200. One side end of the outflow tube 220 may be coupled in communication with the monitoring chamber 200. Wherein, preferably, the outflow pipe 220 may be equipped with a water pump 320 to move and flow the mixed gas from the monitoring chamber 200.
The other end of the outflow pipe 220 is connected to the gas laser generation chamber 100, and the mixed gas moving from the monitor chamber 200 can be returned to the gas laser generation chamber 100.
Alternatively, it is preferable that the outflow pipe 220 is connected to the discharge pipe 120 connected to the gas laser generation chamber 100. In this case, the mixed gas flowing out of the monitoring chamber 200 may move to the discharge pipe 120 and be discharged to the outside along the discharge pipe 120. Preferably, the drain 120 is equipped with a drain valve 160 as needed.
More preferably, as shown in the drawing, the outflow pipe 220 may be further equipped with a switching valve 260. That is, it is preferable that the mixed gas moving along the outflow pipe 220 is returned to the gas laser generation chamber 100 or flows into the discharge pipe 120 and is discharged to the outside along the discharge pipe 120 by switching the switching valve 260.
In this way, the mixed gas flows into the monitoring chamber 200 through the inflow pipe 210, and the mixed gas flows out of the monitoring chamber 200 through the outflow pipe 220, so that the pressure of the mixed gas can be maintained at a certain level in the monitoring chamber 200.
As described above, the gas component monitoring device of a gas laser according to the present invention receives a mixed gas flowing in from a gas laser generation chamber and spectroscopically grasps a component or a component ratio by plasma, thereby continuously monitoring the introduction or generation of the component of the mixed gas or an unnecessary substance in the gas laser generation chamber.
Therefore, it is helpful to be able to ensure output stability of the generated laser beam and to maintain the profile of the generated laser beam to some extent. In the case where the introduction or generation of the components of the mixed gas or the unnecessary substances is continuously monitored so that such a high-quality gas laser is stably and continuously generated and emitted, the inflow amount of each of the different gases flowing into the gas laser generation chamber is accurately adjusted as necessary, and thus there is an advantage that the ultraviolet light source (UV light source) can be stably provided in the manufacturing process of the semiconductor, the flat panel display, or the like.
Such a gas component monitoring device of a gas laser is not only used for pattern exposure but also widely used for an excimer laser used in a thermal processing (annealing) apparatus.
As described above, the present invention is embodied by the embodiments with reference to the drawings, but the above embodiments are only preferred embodiments of the present invention, and thus the present invention is not limited to the embodiments, and the scope of the present invention is to be understood as the claims and the equivalents thereof.
Claims (8)
1. A gas component monitoring device for a gas laser, which is used by being attached to a gas laser beam generation chamber that provides a reaction space for generating a gas laser beam by containing a mixed gas containing a different gas,
a gas composition monitoring device of the gas laser,
a gas laser beam generating chamber connected to the reaction space so as to receive the mixed gas flowing in from the reaction space and monitor a component of the mixed gas contained in the reaction space;
obtaining information on the composition of the mixed gas or the introduction or generation or absence of an unnecessary substance contained in the reaction space by spectroscopic means,
the gas composition monitoring device of the gas laser comprises:
an inflow pipe having one side coupled to the gas laser generation chamber so as to be able to communicate with the gas laser generation chamber;
a monitoring chamber coupled in a manner capable of communicating with the other side of the inflow tube and providing an analysis space receiving and accommodating the mixed gas flown therein through the inflow tube,
further comprising: an electrode installed in the monitoring chamber, receiving the supplied power from the outside to form plasma in the analysis space in the monitoring chamber.
2. The gas composition monitoring device of a gas laser according to claim 1,
the gas composition monitoring device of the gas laser further includes: a spectrometer disposed at one side of the monitoring chamber and configured to obtain information on a composition of the mixed gas or introduction or generation or non-generation of an unnecessary substance from the plasma formed in the analysis space within the monitoring chamber.
3. The gas composition monitoring device of a gas laser according to claim 2,
the gas composition monitoring device of the gas laser further includes: and an outflow pipe having one end coupled to the monitoring chamber so as to be capable of communicating with the monitoring chamber, and guiding a movement of discharging the mixed gas from the reaction space.
4. The gas composition monitoring device of a gas laser according to claim 3,
the gas laser generation chamber is provided with a discharge pipe capable of discharging the mixed gas from the reaction space to the outside,
the other side end of the outflow pipe is coupled to be able to communicate with the discharge pipe.
5. The gas composition monitoring device of a gas laser according to claim 3,
the other side end of the outflow tube is combined with the gas laser generation chamber to communicate the monitoring chamber with the gas laser generation chamber.
6. The gas composition monitoring apparatus of a gas laser according to claim 4,
the gas laser generation chamber is provided with an exhaust pipe capable of exhausting the different gas from the reaction space to the outside,
the outflow pipe is coupled in a manner capable of communicating with the discharge pipe, and is equipped with a switching valve to cause the mixed gas contained in the monitor chamber to selectively flow out to either one of the gas laser generation chamber and the discharge pipe.
7. The gas composition monitoring device of a gas laser according to claim 2,
the monitoring chamber is equipped with an optical window to enable observation of the plasma formed in the analysis space within the monitoring chamber.
8. The gas composition monitoring device of a gas laser according to claim 7,
the optical window is made of quartz or sapphire so as to have chemical durability and ensure a wavelength range band of light transmitted to the spectrometer side to a predetermined level or more.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020180083030A KR102054372B1 (en) | 2018-07-17 | 2018-07-17 | Gas Ingredient Monitoring Equipment for Gas Laser |
| KR10-2018-0083030 | 2018-07-17 | ||
| PCT/KR2019/008770 WO2020017865A1 (en) | 2018-07-17 | 2019-07-16 | Apparatus for monitoring gas component of gas laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112424696A true CN112424696A (en) | 2021-02-26 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201980048019.4A Pending CN112424696A (en) | 2018-07-17 | 2019-07-16 | Gas component monitoring device of gas laser |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR102054372B1 (en) |
| CN (1) | CN112424696A (en) |
| WO (1) | WO2020017865A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20220167049A (en) * | 2021-06-11 | 2022-12-20 | 삼성전자주식회사 | Electronic device including plasma generating unit |
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- 2018-07-17 KR KR1020180083030A patent/KR102054372B1/en active IP Right Grant
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- 2019-07-16 CN CN201980048019.4A patent/CN112424696A/en active Pending
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| CN101413115A (en) * | 2007-10-19 | 2009-04-22 | 财团法人工业技术研究院 | System and method for plasma assisted film deposition |
| CN103326235A (en) * | 2013-07-02 | 2013-09-25 | 中国人民解放军国防科学技术大学 | Light source suitable for sodium laser guide star |
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| Publication number | Publication date |
|---|---|
| WO2020017865A1 (en) | 2020-01-23 |
| KR102054372B1 (en) | 2019-12-10 |
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