CN112420911B - Micro-LED self-radiating device and manufacturing method thereof - Google Patents
Micro-LED self-radiating device and manufacturing method thereof Download PDFInfo
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Abstract
The invention provides a Micro-LED self-radiating device and a manufacturing method thereof, wherein the Micro-LED self-radiating device comprises a substrate, at least one thermoelectric cold Micro device, an insulating layer, a Micro-LED electrode layer and an inverted Micro LED structure, wherein the thermoelectric cold Micro device comprises a p-type thermoelectric material unit, an n-type thermoelectric material unit and a coil metal layer which is electrically connected with the p-type thermoelectric material unit and the n-type thermoelectric material unit; the coil metal layer is electrically connected with the second p-type cold end and the second n-type cold end. The invention utilizes the realization of thermoelectric effect, the substrate needs multilayer metal, and the Micro LED alignment can be realized by utilizing the electromagnetic effect by manufacturing the spiral metal coil (the invention is two embodiments of a planar coil metal layer and a three-dimensional coil metal layer) on the substrate, thereby effectively corresponding to the problem of mass transfer.
Description
Technical Field
The invention belongs to the technical field of display, and particularly relates to a Micro-LED self-radiating device and a manufacturing method thereof.
Background
Compared with the existing OLED and LCD technologies, the Micro-LED as a new generation of display technology has higher brightness, lower power consumption, better luminous efficiency and longer service life, but the Micro-LED still has the defect of poor heat dissipation, so that the temperature of the device is overhigh and the service life is reduced. In the prior art, thermoelectric cooling devices are generally used for dissipating heat of LEDs, but unlike conventional millimeter-sized or larger LEDs, Micro-LED dies are smaller, generally micron-sized, and the required thermoelectric cooling devices are necessarily smaller, which puts higher requirements on the manufacturing of thermoelectric cooling devices.
Document CN100524864C discloses a light emitting diode package structure and a method for manufacturing the same, which uses LEDs with common size, and forms a thermoelectric cooling element by respectively forming positioning portions on two substrates or forming grooves on the substrates, forming N-type semiconductor material and P-type semiconductor material between the positioning portions or grooves of each substrate, and then aligning and combining the positioning portions or grooves of the two substrates. However, the thermoelectric refrigeration element is only suitable for the LED device with the common size and is not suitable for the Micro-LED, the thermoelectric refrigeration element is manufactured by adopting two substrates, so that the cost is increased, the thickness of the device is increased, the process of manufacturing the positioning part and the groove is complex, the cost is increased, the situation of inaccurate alignment of the two substrates during combination is caused, and various adverse problems in the later stage are caused.
Document CN100459194C discloses a package structure and a package method, which also use a common LED device, and form a thermoelectric module by disposing a plurality of N-poles and P-poles between two electrodes, however, disposing the N-poles and P-poles directly on the electrodes not only has great difficulty, but also has severe requirements on size when it is a Micro-LED, and there is no isolation between the N-poles and P-poles, which is liable to cause short circuit.
Above-mentioned comparison document all mentions thermoelectric refrigeration device, but it is that device level size is great, for the welding gomphosis to LED emitting diode's below, even LED single chip also is mm rank structure basically, and is difficult to accomplish the radiating effect of one-to-one, and radiating efficiency is poor, and its thermoelectric device is the isolating construction rather than the base plate of below, non-integral type.
Disclosure of Invention
The invention aims to provide a Micro-LED self-radiating device which realizes alignment of a Micro LED by utilizing electromagnetic benefits and effectively solves the problem of mass transfer and a manufacturing method thereof.
The invention provides a Micro-LED self-radiating device which comprises a substrate, at least one thermoelectric cold Micro device arranged on the substrate, an insulating layer covering the thermoelectric cold Micro device, a Micro-LED electrode layer positioned on the insulating layer and an inverted Micro LED structure positioned on the Micro-LED electrode layer, wherein the thermoelectric cold Micro device comprises a p-type thermoelectric material unit, an n-type thermoelectric material unit and a coil metal layer electrically connected with the p-type thermoelectric material unit and the n-type thermoelectric material unit; the p-type thermoelectric material unit comprises a hot end cathode, a p-type thermoelectric material positioned on the hot end cathode, a first p-type cold end positioned on the p-type thermoelectric material and a second p-type cold end positioned on the first p-type cold end; the n-type thermoelectric material unit comprises a hot end anode, a first n-type cold end positioned on the hot end anode, an n-type thermoelectric material positioned on the first n-type cold end and a second n-type cold end positioned on the n-type thermoelectric material; the coil metal layer is electrically connected with the second p-type cold end and the second n-type cold end.
Further, the coil metal layer is planar.
Further, the insulating layer includes a first insulating layer, a second insulating layer, a third insulating layer, and a fourth insulating layer; the n-type thermoelectric material unit is positioned on the first insulating layer; the second insulating layers are positioned on two sides of the n-type thermoelectric material unit and separate the p-type thermoelectric material unit from the n-type thermoelectric material unit; the third insulating layer covers the p-type thermoelectric material unit and the n-type thermoelectric material unit; the coil metal layer penetrates through the third insulating layer and is electrically connected with the p-type thermoelectric material unit and the n-type thermoelectric material unit respectively; the fourth insulating layer covers the coil metal layer.
Further, the coil metal layer is three-dimensional.
Further, the coil metal layer includes a first p-type coil metal layer electrically connected to the second p-type cold junction, a first n-type coil metal layer electrically connected to the second n-type cold junction, a second p-type coil metal layer connected to the first p-type coil metal layer, a second n-type coil metal layer connected to the first n-type coil metal layer, a third p-type coil metal layer connected to the second p-type coil metal layer, a third n-type coil metal layer connected to the second n-type coil metal layer, and a coil bridging metal layer connecting the third p-type coil metal layer and the third n-type coil metal layer.
Further, the insulating layers comprise a first insulating layer, a second insulating layer, a third insulating layer, a fourth insulating layer, a fifth insulating layer, a sixth insulating layer and a seventh insulating layer, wherein the seventh insulating layer covers the Micro-LED electrode layer; the n-type thermoelectric material unit is positioned on the first insulating layer; the second insulating layers are positioned on two sides of the n-type thermoelectric material unit and separate the p-type thermoelectric material unit from the n-type thermoelectric material unit; the third insulating layer covers the p-type thermoelectric material unit and the n-type thermoelectric material unit; the first p-type coil metal layer and the first n-type coil metal layer are positioned on the third insulating layer; the fourth insulating layer covers the first p-type coil metal layer and the first n-type coil metal layer; the fifth insulating layer covers the second p-type coil metal layer and the second n-type coil metal layer; the sixth insulating layer covers the second p-type coil metal layer and the second n-type coil metal layer.
Further, the flip Micro LED structure comprises a buffer substrate, an N-type gallium nitride layer fixed at the bottom of the buffer substrate, a light emitting layer, an insulating isolation layer or an independent metal layer, an LED negative electrode, a P-type gallium nitride layer positioned at the bottom of the light emitting layer, a high-reflection positive electrode positioned at the bottom of the P-type gallium nitride layer and a ferromagnetic metal layer positioned below the insulating isolation layer or the independent metal layer, wherein the light emitting layer, the insulating isolation layer or the independent metal layer and the LED negative electrode are all positioned at the bottom of the N-type gallium nitride layer, and the insulating isolation layer or the independent metal layer is positioned between the light emitting layer and the LED negative electrode.
The invention also provides a manufacturing method of the Micro-LED self-radiating device, which comprises the following steps:
s1: depositing a first insulating material layer on a substrate, etching the first insulating material layer and forming first insulating layers arranged in an array and first grooves positioned between adjacent first insulating layers;
s2, forming a p-type thermoelectric material unit in the first groove, and forming an n-type thermoelectric material unit on the first insulating layer, wherein the p-type thermoelectric material unit and the n-type thermoelectric material unit are concave-convex;
s3, depositing a second insulating layer material layer, and etching to form a second insulating layer which is positioned on the first insulating layer and covers the n-type thermoelectric material unit and a second groove which is positioned on the p-type thermoelectric material unit;
s4, depositing a third insulating material layer to form a third insulating layer which is positioned on the p-type thermoelectric material unit and in the second groove and a third insulating layer which is positioned on the n-type thermoelectric material unit; then, etching the third insulating layer to form a first via hole located on the p-type thermoelectric material unit and a second via hole located on the n-type thermoelectric material unit;
s5, depositing a coil metal layer, and etching the coil metal layer to form a coil metal layer connected between the first via hole and the second via hole;
s6, depositing a fourth insulating layer material layer, and etching to form a fourth insulating layer covering the coil metal layer, wherein the fourth insulating layer is positioned on the coil metal layer in the second groove 32 and on the coil metal layer on the n-type thermoelectric material unit;
s7, depositing a Micro-LED electrode metal layer, and etching to form a Micro-LED anode positioned above the p-type thermoelectric material unit and a Micro-LED cathode positioned above the n-type thermoelectric material unit;
s8, respectively dotting tin bumps on the anode of the Micro-LED and the cathode of the Micro-LED; then transferring the inverted Micro LED structure and welding the inverted Micro LED structure on the tin bump; and finally, packaging by packaging materials.
The invention also provides a manufacturing method of the Micro-LED self-radiating device, which comprises the following steps:
s1: depositing a first insulating material layer on a substrate, etching the first insulating material layer and forming first insulating layers arranged in an array and first grooves positioned between adjacent first insulating layers;
s2, forming a p-type thermoelectric material unit in the first groove, and forming an n-type thermoelectric material unit on the first insulating layer, wherein the p-type thermoelectric material unit and the n-type thermoelectric material unit are concave-convex;
s3, depositing a second insulating layer material layer, and etching to form a second insulating layer which is positioned on the first insulating layer and covers the n-type thermoelectric material unit and a second groove which is positioned on the p-type thermoelectric material unit;
s4, depositing a third insulating material layer to form a third insulating layer on the p-type thermoelectric material unit and in the second groove and a third insulating layer on the n-type thermoelectric material unit; then, etching the third insulating layer to form a first via hole located on the p-type thermoelectric material unit and a second via hole located on the n-type thermoelectric material unit;
s5, depositing a first coil metal layer, and etching the first coil metal layer to form a first p-type coil metal layer connected with the p-type thermoelectric material unit through the first via hole and a first n-type coil metal layer connected with the n-type thermoelectric material unit through the second via hole;
s6, depositing a fourth insulating layer material layer, etching to form a fourth insulating layer covering the first coil metal layer, and then etching the fourth insulating layer to form a third via hole located on the first p-type coil metal layer and a fourth via hole located on the first n-type coil metal layer;
s7, depositing a second coil metal layer, and etching the second coil metal layer to form a second p-type coil metal layer connected with the first p-type coil metal layer through a third through hole and a second n-type coil metal layer connected with the first n-type coil metal layer through a fourth through hole;
s8, depositing a fifth insulating layer material layer, etching to form a fifth insulating layer covering the second coil metal layer, and then etching the fifth insulating layer to form a fifth via hole located on the second p-type coil metal layer and a sixth via hole located on the second n-type coil metal layer;
s9, depositing a third coil metal layer, and etching the third coil metal layer to form a third p-type coil metal layer connected with the second p-type coil metal layer through a fifth through hole and a third n-type coil metal layer connected with the second n-type coil metal layer through a sixth through hole;
s10, depositing a sixth insulating layer material layer, etching to form a sixth insulating layer covering the third coil metal layer, and then etching the sixth insulating layer to form a seventh via hole located on the third p-type coil metal layer and an eighth via hole located on the third n-type coil metal layer;
s11, depositing a fourth coil metal layer, and etching the fourth coil metal layer to form a coil bridging metal layer which is connected through a seventh through hole and an eighth through hole;
s12, depositing a seventh insulating layer covering the fourth coil metal layer; then depositing a Micro-LED electrode metal layer, and etching to form a Micro-LED anode positioned above the p-type thermoelectric material unit and a Micro-LED cathode positioned above the n-type thermoelectric material unit;
s13, respectively dotting tin bumps on the anode of the Micro-LED and the cathode of the Micro-LED; then transferring the inverted Micro LED structure and welding the inverted Micro LED structure on the tin bump; and finally, packaging by packaging materials.
Further, the step S2 may specifically include the following steps:
s21, depositing a first hot metal layer, and etching the first hot metal layer to form a hot end cathode in the first groove and a hot end anode on the first insulating layer;
s22, depositing a p-type material layer, and etching the p-type material layer to form a p-type thermoelectric material on the hot-end cathode;
s23, depositing a second cold metal layer, and etching the second cold metal layer to form a first p-type cold end positioned on the p-type thermoelectric material and a first n-type cold end positioned on the hot-end anode;
s24, depositing an n-type thermoelectric material, and etching the n-type thermoelectric material layer to form an n-type thermoelectric material positioned on the first n-type cold side;
and S25, depositing a third cold metal layer, and etching the third cold metal layer to form a second p-type cold end positioned on the first p-type cold end and a second n-type cold end positioned on the n-type thermoelectric material.
The invention utilizes the realization of thermoelectric effect, the substrate needs multilayer metal, and the Micro LED alignment can be realized by utilizing the electromagnetic effect by manufacturing the spiral metal coil (the invention is two embodiments of a planar coil metal layer and a three-dimensional coil metal layer) on the substrate, thereby effectively corresponding to the problem of mass transfer.
Drawings
FIG. 1 is a schematic structural view of a first embodiment of a Micro-LED self-heat dissipation device according to the present invention;
FIG. 2 is a top view of the Micro-LED self-heat sink of FIG. 1;
FIG. 3 is a schematic current diagram of a coil metal layer of the Micro-LED self-heat dissipation device shown in FIG. 2;
FIGS. 4a and 4b are schematic structural views of a flip-chip Micro LED structure according to the present invention
FIGS. 5a to 5k are schematic views illustrating a manufacturing process of a first embodiment of a Micro-LED self-heat-dissipating device according to the present invention;
FIG. 6 is a schematic structural view of a second embodiment of a Micro-LED self-heat dissipation device according to the present invention;
FIG. 7 is a schematic diagram of the metal layer current of the three-dimensional coil shown in FIG. 6;
FIG. 8 is a schematic perspective view of the metal layer of the three-dimensional coil shown in FIG. 7;
fig. 9a to 9p are schematic views illustrating a manufacturing process of a second embodiment of the Micro-LED self-heat dissipation device according to the present invention.
Detailed Description
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following description will be made with reference to the accompanying drawings. It is obvious that the drawings in the following description are only some examples of the invention, and that for a person skilled in the art, other drawings and embodiments can be derived from them without inventive effort.
For the sake of simplicity, the drawings only schematically show the parts relevant to the present invention, and they do not represent the actual structure as a product. In addition, in order to make the drawings concise and understandable, components having the same structure or function in some of the drawings are only schematically illustrated or only labeled. In this document, "a" means not only "only one of this but also a case of" more than one ".
Fig. 1 to 4b are schematic structural views of a first embodiment of the Micro-LED self-heat-dissipating device of the present invention, which includes a heat-dissipating substrate 1, at least one thermoelectric cold Micro device 100 disposed on the heat-dissipating substrate 1, an insulating layer 2 covering the thermoelectric cold Micro device 100, a Micro-LED electrode layer disposed on the insulating layer 2, an inverted Micro LED structure 300 disposed on the Micro-LED electrode layer, and a filling encapsulant 400, wherein the encapsulant 400 is filled between adjacent inverted Micro LED structures 300, between the inverted Micro LED structure 300 and the Micro-LED electrode layer, and between the inverted Micro LED structure 300 and the thermoelectric cold Micro device 100; the flip Micro LED structure 200 is electrically connected with the Micro-LED electrode layer, wherein the flip Micro LED structure can also be a vertical M-LED structure or a vertical OLED structure.
As shown in fig. 2 and 3, the heat dissipating substrate 1 has insulating heat conductive properties, and has a heat conductive metal (not shown) inside.
The thermoelectric cooling micro device 100 is provided in plurality, and each thermoelectric cooling micro device 100 includes a p-type thermoelectric material unit, an n-type thermoelectric material unit, and a coil metal layer 7 electrically connecting the p-type thermoelectric material unit and the n-type thermoelectric material unit. The insulating layer 2 insulates the thermo-electric cooling Micro device 100 from the Micro-LED electrode layer.
The p-type thermoelectric material unit preferably comprises a hot side cathode 3, a p-type thermoelectric material 5 positioned on the hot side cathode 3, a first p-type cold side 711 positioned on the p-type thermoelectric material 5, and a second p-type cold side 713 positioned on the first p-type cold side 711; the n-type thermoelectric material unit preferably includes a hot side anode 4, a first n-type cold side 712 on hot side anode 4, an n-type thermoelectric material 6 on first n-type cold side 712, and a second n-type cold side 714 on n-type thermoelectric material 6.
In the first embodiment, the coil metal layer 7 is planar.
The hot-side cathode 3 and the hot-side anode 4 are close to the heat dissipation substrate 1.
The p-type thermoelectric material 5 and the n-type thermoelectric material 6 are both semiconductor materials, preferably semiconductor materials having low thermal conductivity and resistivity, such as BiTe, SbTe, BiSe, and the like in particular; more preferably, the p-type thermoelectric material 5 may be a p-type material composed of Bi-Sb-Te, or the like, and the n-type thermoelectric material 6 may be an n-type material composed of Bi-Se-Te, or the like. It is to be noted that the selection of the p-type thermoelectric material and the n-type thermoelectric material is not limited thereto.
Preferably, as shown in fig. 1, the pair of p-type thermoelectric material units and the n-type thermoelectric material unit form a thermoelectric cooling Micro device, and a plurality of thermoelectric cooling Micro devices are connected to the power supply 11 in parallel, so as to achieve one-to-one heat dissipation for the Micro-LEDs.
The insulating layer 2 preferably includes a first insulating layer 21, a second insulating layer 22, a third insulating layer 23, and a fourth insulating layer 24, which are sequentially disposed on the heat-dissipating substrate 1.
The p-type thermoelectric material unit is positioned on the heat dissipation substrate 1, and the n-type thermoelectric material unit is positioned on the first insulating layer 21; the second insulating layer 22 is positioned on two sides of the n-type thermoelectric material unit, and the p-type thermoelectric material unit and the n-type thermoelectric material unit are separated by the second insulating layer 22; a third insulating layer 23 covers the p-type thermoelectric material unit and the n-type thermoelectric material unit; the coil metal layer 7 penetrates through the third insulating layer 23 to be electrically connected with the p-type thermoelectric material unit and the n-type thermoelectric material unit respectively (actually, the coil metal layer 7 penetrates through the third insulating layer 23 to be electrically connected with the second p-type cold end 713 of the p-type thermoelectric material unit and the second n-type cold end 714 of the n-type thermoelectric material unit respectively); the fourth insulating layer 24 covers the coil metal layer 7. The p-type thermoelectric material unit and the n-type thermoelectric material unit are electrically connected through the coil metal layer 7.
The Micro-LED electrode layer preferably comprises a Micro-LED positive electrode 8 over the p-type thermoelectric material cell and a Micro-LED negative electrode 9 over the n-type thermoelectric material cell.
Preferably, the Micro-LED electrode layer is provided with tin bumps 10, the tin bumps 10 are respectively positioned above the Micro-LED positive electrode 8 and the Micro-LED negative electrode 9, and the inverted Micro-LED structure is embedded through the tin bumps 10.
As shown in fig. 4a and 4b, which are examples of the flip-chip Micro LED structure 300 having two structures, fig. 4a shows a first example of the flip-chip Micro LED structure 300, the flip-chip Micro LED structure 300 includes a buffer substrate 301, an N-type gallium nitride layer 302 fixed on the bottom of the buffer substrate 301, a light emitting layer 303, an insulating isolation layer 304, an LED negative electrode 305, a P-type gallium nitride layer 306 located on the bottom of the light emitting layer 304, a highly reflective positive electrode 307 located on the bottom of the P-type gallium nitride layer 306, and a ferromagnetic metal layer 308 located under the insulating isolation layer 304, wherein the light emitting layer 303, the insulating isolation layer 304, and the LED negative electrode 305 are all located on the bottom of the N-type gallium nitride layer 302, and the insulating isolation layer 304 is located between the light emitting layer 303 and the LED negative electrode 305.
Fig. 4b shows a second embodiment of a flip-chip Micro LED structure 300, differing from the first embodiment shown in fig. 4: the insulating isolation layer is an independent metal layer 304, the independent metal layer 304 is positioned between the light emitting layer 303 and the LED negative electrode 305, and the ferromagnetic metal layer 308 is positioned below the independent metal layer 304.
Fig. 5a-5k illustrate a method of manufacturing a Micro-LED self heat sink device according to a first embodiment of the present invention, comprising the steps of:
s1: as shown in fig. 5a, depositing a first insulating material layer on the heat dissipation substrate 1, etching the first insulating material layer to form first insulating layers 21 arranged in an array and first grooves 31 located between adjacent first insulating layers 21, where the first insulating layers 21 and the first grooves 31 are both located on the heat dissipation substrate 1;
s2, forming p-type thermoelectric material units in the first grooves 31, and forming n-type thermoelectric material units on the first insulating layer 21, wherein the p-type thermoelectric material units and the n-type thermoelectric material units are concave-convex;
s3, as shown in fig. 5f, depositing a second insulating layer material layer, and etching to form a second insulating layer 22 on the first insulating layer 21 and covering the n-type thermoelectric material unit and a second groove 32 on the p-type thermoelectric material unit;
s4, as shown in fig. 5g, first depositing a third insulating material layer to form a third insulating layer 23 on the p-type thermoelectric material unit and in the second groove 32 and a third insulating layer 23 on the n-type thermoelectric material unit; the third insulating layer 23 is then etched to form a first via 33 on the p-type thermoelectric material unit (in effect the first via 33 is on the second p-type cold side 713) and a second via 34 on the n-type thermoelectric material unit (in effect the second via 34 is on the second n-type cold side 714);
s5, as shown in fig. 5h, depositing a coil metal layer, and etching the coil metal layer to form a coil metal layer 7 connected between the first via hole 33 and the second via hole 34 (actually, the coil metal layer 7 is respectively connected to the second p-type cold end 713 and the second n-type cold end 714 through the first via hole 33 and the second via hole 34, so as to be respectively connected to the p-type thermoelectric material unit and the n-type thermoelectric material unit), where the coil metal layer 7 is located on the third insulating layer 23 in the second groove 32 and on the third insulating layer 23 on the n-type thermoelectric material unit;
s6, as shown in fig. 5i, depositing a fourth insulating layer material layer, and etching to form a fourth insulating layer 24 covering the coil metal layer 7, the fourth insulating layer 24 being located on the coil metal layer 7 in the second groove 32 and on the coil metal layer 7 on the n-type thermoelectric material unit;
s7, as shown in FIG. 5j, depositing a Micro-LED electrode metal layer, and etching to form a Micro-LED anode 8 positioned above the p-type thermoelectric material unit and a Micro-LED cathode 9 positioned above the n-type thermoelectric material unit, wherein the Micro-LED anode 8 and the Micro-LED cathode 9 are both positioned on the fourth insulating layer 24;
s8, as shown in FIG. 5k, firstly, respectively dotting tin bumps 10 on the Micro-LED positive electrode 8 and the Micro-LED negative electrode 9; then transferring the inverted Micro LED structure 300 and welding the inverted Micro LED structure on the tin bump 10; and finally encapsulated by an encapsulating material 400.
Thus, the Micro-LED self-radiating device is completed.
Preferably, in step S2, the p-type thermoelectric material unit and the n-type thermoelectric material unit may be fabricated by a thin film process.
More preferably, the step S2 may specifically include the following steps:
s21, as shown in fig. 5b, depositing a first hot metal layer, and etching the first hot metal layer to form a hot-end cathode 3 located in the first groove 31 and a hot-end anode 4 located on the first insulating layer 21;
s22, as shown in figure 5c, depositing a p-type material layer, and etching the p-type material layer to form a p-type thermoelectric material 5 on the hot-end cathode 3;
s23, as shown in fig. 5d, depositing a second cold metal layer, and etching the second cold metal layer to form a first p-type cold end 711 on the p-type thermoelectric material 5 and a first n-type cold end 712 on the hot side anode 4; the first n-type cold end 712 is also reserved on the hot-end anode 4, so that the n-type thermoelectric material unit can be raised, the concave-convex structure of the whole heat dissipation device is more suitable for the Micro-LED to be welded, and the normal heat dissipation performance cannot be influenced;
s24, as shown in fig. 5e, depositing an n-type thermoelectric material, etching the n-type thermoelectric material layer to form an n-type thermoelectric material 6 on the first n-type cold side 712;
s25, as shown in fig. 5f, a third cold metal layer is deposited and etched to form a second p-type cold end 713 on first p-type cold end 711 and a second n-type cold end 714 on n-type thermoelectric material 6.
The p-type thermoelectric material unit and the n-type thermoelectric material unit are formed above.
Preferably, during soldering, the flip-chip Micro LED structure 300 to be soldered, and the high-reflection positive electrode 307 and the LED negative electrode 305 of the flip-chip Micro LED structure 300 are respectively soldered to the solder bumps 10 corresponding to the positive and negative electrodes of the Micro-LED on the self-cooling device.
In step S8, the highly reflective positive electrode 307 of the flip-chip Micro LED structure 300 is soldered to the Micro-LED positive electrode 8 through the tin bumps 10, and the LED negative electrode 305 of the flip-chip Micro LED structure 300 is soldered to the Micro-LED negative electrode 9 through the tin bumps 10.
The flip-chip Micro-LED structure to be soldered can be arbitrarily selected, and is not particularly limited as long as it can match with the structure of the heat sink. Specifically, for example, the Micro-LED structure includes a positive electrode and a negative electrode soldered to the first solder bumps corresponding to the positive and negative electrodes of the Micro-LED on the self-cooling device, wherein the positive electrode has a high selectable reflectivity, and the like, and further includes a p-type material and an n-type material respectively connected to the positive electrode and the negative electrode, the p-type material and the n-type material are connected through the light-emitting layer, and the n-type material is connected to the buffer layer. It should be noted that the above is merely illustrative and does not represent a unique embodiment.
In addition, the self-radiating device and the preparation method are not only suitable for Micro-LEDs, but also suitable for OLED and other display devices with large heat productivity, and the heat radiation of the corresponding position under the pixel is realized.
Fig. 6 to 8 are schematic structural views of a first embodiment of the Micro-LED self-heat dissipation device of the present invention, which is different from the first embodiment: the coil metal layer 7 is three-dimensional.
The flip Micro-LED structure 300 is arranged on the thermoelectric cooling Micro device 100 and the three-dimensional coil metal layer, so that the heat dissipation and alignment effects are realized.
As shown in fig. 7 and 8, the coil metal layer 7 includes a first p-type coil metal layer 71 electrically connected to the second p-type cold end 713 of the p-type thermoelectric material unit through the first via hole 33, a first n-type coil metal layer 72 electrically connected to the second n-type cold end 714 of the n-type thermoelectric material unit through the second via hole 34, a second p-type coil metal layer 73 connected to the first p-type coil metal layer 71 through the third via hole 35, a second n-type coil metal layer 74 connected to the first n-type coil metal layer 72 through the fourth via hole 36, a third p-type coil metal layer 75 connected to the second p-type coil metal layer 73 through the fifth via hole 37, a third n-type coil metal layer 76 connected to the second n-type coil metal layer 74 through the sixth via hole 38, and a coil bridge metal layer 77 connecting the third p-type coil metal layer 75 and the third n-type coil metal layer 76, one end of the coil bridging metal layer 77 is connected to the third p-type coil metal layer 75 through the seventh via hole 39, and the other end of the coil bridging metal layer 77 is connected to the third n-type coil metal layer 76 through the eighth via hole 40.
As shown in fig. 9n and 9o, the insulating layer 2 preferably includes a first insulating layer 21, a second insulating layer 22, a third insulating layer 23, a fourth insulating layer 24, a fifth insulating layer 25, a sixth insulating layer 26, and a seventh insulating layer 27, which are sequentially disposed on the heat dissipation substrate 1, wherein the seventh insulating layer 27 covers the Micro-LED electrode layer.
The p-type thermoelectric material unit is positioned on the heat dissipation substrate 1, and the n-type thermoelectric material unit is positioned on the first insulating layer 21; the second insulating layer 22 is positioned on two sides of the n-type thermoelectric material unit, and the p-type thermoelectric material unit and the n-type thermoelectric material unit are separated by the second insulating layer 22; a third insulating layer 23 covers the p-type thermoelectric material unit and the n-type thermoelectric material unit; the first via hole 33 and the second via hole 34 respectively penetrate through the third insulating layers 23 on the p-type thermoelectric material unit and the n-type thermoelectric material unit, and the first p-type coil metal layer 71 and the first n-type coil metal layer 72 are positioned on the third insulating layers 23 and are respectively electrically connected with the second p-type cold end 713 of the p-type thermoelectric material unit and the second n-type cold end 714 of the n-type thermoelectric material unit; the fourth insulating layer 34 covers the first p-type coil metal layer 71 and the first n-type coil metal layer 72, the third through hole 35 and the fourth through hole 36 respectively penetrate through the fourth insulating layer 34, and the second p-type coil metal layer 73 and the second n-type coil metal layer 74 are connected with the first p-type coil metal layer 71 and the first n-type coil metal layer 72 after penetrating through the third through hole 35 and the fourth through hole 36 respectively; the fifth insulating layer 35 covers the second p-type coil metal layer 73 and the second n-type coil metal layer 74, the fifth through hole 37 and the sixth through hole 38 respectively penetrate through the fifth insulating layer 35, and the third p-type coil metal layer 75 and the third n-type coil metal layer 76 respectively penetrate through the fifth through hole 37 and the sixth through hole 38 and then are connected with the second p-type coil metal layer 73 and the second n-type coil metal layer 74; the sixth insulating layer 36 covers the second p-type coil metal layer 73 and the second n-type coil metal layer 74, the seventh via hole 39 and the eighth via hole 40 pass through the sixth insulating layer 36, and both ends of the coil bridging metal layer 77 are connected to the third p-type coil metal layer 75 and the third n-type coil metal layer 76 through the seventh via hole 39 and the eighth via hole 40, respectively.
Fig. 9a-9k illustrate a method of manufacturing a second embodiment of the Micro-LED self heat sink device of the present invention, comprising the steps of:
s1: as shown in fig. 9a, depositing a first insulating material layer on the heat dissipation substrate 1, etching the first insulating material layer to form first insulating layers 21 arranged in an array and first grooves 31 located between adjacent first insulating layers 21, where the first insulating layers 21 and the first grooves 31 are both located on the heat dissipation substrate 1;
s2, forming p-type thermoelectric material units in the first grooves 31, and forming n-type thermoelectric material units on the first insulating layer 21, wherein the p-type thermoelectric material units and the n-type thermoelectric material units are concave-convex;
s3, as shown in fig. 9f, depositing a second insulating layer material layer, and etching to form a second insulating layer 22 on the first insulating layer 21 and covering the n-type thermoelectric material unit and a second groove 32 on the p-type thermoelectric material unit;
s4, as shown in fig. 9g, first depositing a third insulating material layer to form a third insulating layer 23 on the p-type thermoelectric material unit and in the second groove 32, and a third insulating layer 23 on the n-type thermoelectric material unit; the third insulating layer 23 is then etched to form a first via 33 on the p-type thermoelectric material unit (in effect the first via 33 is on the second p-type cold side 713) and a second via 34 on the n-type thermoelectric material unit (in effect the second via 34 is on the second n-type cold side 714);
s5, as shown in fig. 9h, depositing a first coil metal layer, and etching the first coil metal layer to form a first p-type coil metal layer 71 (actually, the first p-type coil metal layer 71 is connected to the second p-type cold end 713 through the first via hole 33) connected to the p-type thermoelectric material unit and a first n-type coil metal layer 72 (actually, the first n-type coil metal layer 72 is connected to the second n-type cold end 714 through the second via hole 34 connected to the n-type thermoelectric material unit) connected to the n-type thermoelectric material unit through the second via hole 34, wherein the first p-type coil metal layer 71 is located on the third insulating layer 23 in the second groove 32 and on the third insulating layer 23 on the n-type thermoelectric material unit;
s6, as shown in fig. 9i, depositing a fourth insulating layer material layer, etching to form a fourth insulating layer 24 covering the first coil metal layer, and then etching the fourth insulating layer 24 to form a third via hole 35 located on the first p-type coil metal layer 71 and a fourth via hole 36 located on the first n-type coil metal layer 72; the fourth insulating layer 24 is positioned on the first p-type coil metal layer 71 in the second groove 32 and on the first n-type coil metal layer 72 on the n-type thermoelectric material unit;
s7, as shown in fig. 9j, depositing a second coil metal layer, and etching the second coil metal layer to form a second p-type coil metal layer 73 connected to the first p-type coil metal layer 71 through the third via hole 35 and a second n-type coil metal layer 74 connected to the first n-type coil metal layer 72 through the fourth via hole 36;
s8, as shown in fig. 9k, depositing a fifth insulating material layer, etching to form a fifth insulating layer 25 covering the second coil metal layer, and then etching the fifth insulating layer 25 to form a fifth via hole 37 on the second p-type coil metal layer 73 and a sixth via hole 38 on the second n-type coil metal layer 74; a fifth insulating layer 25 is located on the second p-type coil metal layer 73 in the second groove 32 and on the second n-type coil metal layer 74 on the n-type thermoelectric material unit;
s9, as shown in fig. 9l, depositing a third coil metal layer, etching the third coil metal layer to form a third p-type coil metal layer 75 connected to the second p-type coil metal layer 73 through the fifth via hole 37 and a third n-type coil metal layer 76 connected to the second n-type coil metal layer 74 through the sixth via hole 38;
s10, as shown in fig. 9m, depositing a sixth insulating material layer, etching to form a sixth insulating layer 26 covering the third coil metal layer, and then etching the sixth insulating layer 26 to form a seventh via hole 39 on the third p-type coil metal layer 75 and an eighth via hole 40 on the third n-type coil metal layer 76;
s11, as shown in fig. 9n, depositing a fourth coil metal layer, and etching the fourth coil metal layer to form a coil bridging metal layer 77 connecting through the seventh via hole 39 and the eighth via hole 40;
s12, as shown in fig. 9o, first depositing a seventh insulating layer 27 covering the fourth coil metal layer; then depositing a Micro-LED electrode metal layer, and etching to form a Micro-LED anode 8 positioned above the p-type thermoelectric material unit and a Micro-LED cathode 9 positioned above the n-type thermoelectric material unit, wherein the Micro-LED anode 8 and the Micro-LED cathode 9 are both positioned on the seventh insulating layer 27;
s13, as shown in FIG. 9p, firstly, respectively dotting tin bumps 10 on the Micro-LED positive electrode 8 and the Micro-LED negative electrode 9; then transferring the inverted Micro LED structure 300 and welding the inverted Micro LED structure on the tin bump 10; and finally encapsulated by an encapsulating material 400.
Thus, the Micro-LED self-radiating device is completed.
Preferably, in step S2, the p-type thermoelectric material unit and the n-type thermoelectric material unit may be fabricated by a thin film process.
More preferably, the step S2 may specifically include the following steps:
s21, as shown in fig. 9b, depositing a first hot metal layer, and etching the first hot metal layer to form a hot-end cathode 3 located in the first groove 31 and a hot-end anode 4 located on the first insulating layer 21;
s22, as shown in FIG. 9c, depositing a p-type material layer, and etching the p-type material layer to form a p-type thermoelectric material 5 on the hot-end cathode 3;
s23, as shown in fig. 9d, depositing a second cold metal layer, and etching the second cold metal layer to form a first p-type cold end 711 on the p-type thermoelectric material 5 and a first n-type cold end 712 on the hot side anode 4; the first n-type cold end 712 is also reserved on the hot-end anode 4, so that the n-type thermoelectric material unit can be raised, the concave-convex structure of the whole heat dissipation device is more suitable for the Micro-LED to be welded, and the normal heat dissipation performance cannot be influenced;
s24, as shown in fig. 9e, depositing an n-type thermoelectric material, and etching the n-type thermoelectric material layer to form an n-type thermoelectric material 6 on the first n-type cold side 712;
s25, as shown in fig. 9f, a third cold metal layer is deposited and etched to form a second p-type cold end 713 on first p-type cold end 711 and a second n-type cold end 714 on n-type thermoelectric material 6.
The p-type thermoelectric material unit and the n-type thermoelectric material unit are formed as above.
The embodiment of the present invention uses the heat dissipation substrate 1, and of course, a common glass substrate may be used.
The Micro-LED self-radiating device and the manufacturing method have the advantages that:
firstly, the thermoelectric cooling Micro device 100 corresponds to the size of a Micro-LED, and the size is in the um level and the mm level of an unconventional LED;
the size of the second p-type thermoelectric material unit and the size of the n-type thermoelectric material unit correspond to the pixel level of the Micro LED well, the thermoelectric p-type thermoelectric material unit and the n-type thermoelectric material unit are miniaturized, and a one-to-one corresponding heat dissipation structure and effect are achieved;
thirdly, the p-type thermoelectric material unit and the n-type thermoelectric material unit are manufactured by a thin film process, and are in non-same-layer structures;
fourthly, the p-type thermoelectric material unit and the n-type thermoelectric material unit are manufactured by adopting a thin film process, so that a size structure and a process method corresponding to the single Micro LED pixel level heat radiation can be well realized, the technical obstacle that the traditional p-type thermoelectric material unit and the traditional n-type thermoelectric material unit and the process thereof cannot miniaturize the units is overcome, the miniaturization is realized by the thin film process, and the miniaturized heat radiation of the single Micro LED pixel level can be realized;
fifthly, the thermoelectric effect can effectively solve the defect of poor heat dissipation of the Micro LED light-emitting unit, the thermoelectric effect is direct conversion between temperature difference and voltage, when voltage is applied, electrons leave the P-type semiconductor and enter the metal conductor, the electrons are raised to a high level, and heat is absorbed from the outside; when electrons leave the N-type semiconductor and enter the metal conductor, the electrons will release energy, expelling heat. The invention utilizes the characteristic that the substrate needs multiple layers of metal, manufactures a spiral metal coil (the invention is two embodiments of a planar coil metal layer and a three-dimensional coil metal layer) on the substrate, can realize Micro LED alignment by utilizing the electromagnetic effect, and effectively solves the problem of huge transfer.
According to the invention, a thermoelectric cold Micro device is manufactured by utilizing a thermoelectric effect under the condition of well matching with an inverted Micro LED pixel structure, so that thermoelectric conversion is carried out by utilizing the thermoelectric cold Micro device to dissipate heat, and the service life of the Micro LED can be greatly prolonged; and the circuit of the thermoelectric cooling micro device is made into a coil structure, and huge transfer is realized through an electromagnetic effect.
It should be noted that the above embodiments can be freely combined as necessary. The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (10)
1. A Micro-LED self-heat-dissipation device is characterized by comprising a substrate, at least one thermoelectric cold Micro device arranged on the substrate, an insulating layer covering the thermoelectric cold Micro device, a Micro-LED electrode layer positioned on the insulating layer and an inverted Micro LED structure positioned on the Micro-LED electrode layer, wherein the thermoelectric cold Micro device comprises a p-type thermoelectric material unit, an n-type thermoelectric material unit and a coil metal layer electrically connecting the p-type thermoelectric material unit and the n-type thermoelectric material unit; the p-type thermoelectric material unit comprises a hot end cathode, a p-type thermoelectric material positioned on the hot end cathode, a first p-type cold end positioned on the p-type thermoelectric material and a second p-type cold end positioned on the first p-type cold end; the n-type thermoelectric material unit comprises a hot-end anode, a first n-type cold end positioned on the hot-end anode, an n-type thermoelectric material positioned on the first n-type cold end and a second n-type cold end positioned on the n-type thermoelectric material; the coil metal layer is electrically connected with the second p-type cold end and the second n-type cold end.
2. The Micro-LED self heat sink of claim 1, wherein the coil metal layer is planar.
3. The Micro-LED self heat sink of claim 2, wherein the insulating layer comprises a first insulating layer, a second insulating layer, a third insulating layer, and a fourth insulating layer; the n-type thermoelectric material unit is positioned on the first insulating layer; the second insulating layers are positioned on two sides of the n-type thermoelectric material unit and separate the p-type thermoelectric material unit from the n-type thermoelectric material unit; the third insulating layer covers the p-type thermoelectric material unit and the n-type thermoelectric material unit; the coil metal layer penetrates through the third insulating layer and is electrically connected with the p-type thermoelectric material unit and the n-type thermoelectric material unit respectively; the fourth insulating layer covers the coil metal layer.
4. The Micro-LED self-dissipating heat sink of claim 1, wherein the coil metal layer is three-dimensional.
5. The Micro-LED self-dissipating device according to claim 4, wherein the coil metal layer comprises a first p-type coil metal layer electrically connected to the second p-type cold side, a first n-type coil metal layer electrically connected to the second n-type cold side, a second p-type coil metal layer connected to the first p-type coil metal layer, a second n-type coil metal layer connected to the first n-type coil metal layer, a third p-type coil metal layer connected to the second p-type coil metal layer, a third n-type coil metal layer connected to the second n-type coil metal layer, and a coil bridging metal layer connecting the third p-type coil metal layer and the third n-type coil metal layer.
6. A Micro-LED self-heat sink according to claim 5, wherein the insulating layer comprises a first insulating layer, a second insulating layer, a third insulating layer, a fourth insulating layer, a fifth insulating layer, a sixth insulating layer and a seventh insulating layer, wherein the seventh insulating layer covers the Micro-LED electrode layer; the n-type thermoelectric material unit is positioned on the first insulating layer; the second insulating layers are positioned on two sides of the n-type thermoelectric material unit and separate the p-type thermoelectric material unit from the n-type thermoelectric material unit; the third insulating layer covers the p-type thermoelectric material unit and the n-type thermoelectric material unit; the first p-type coil metal layer and the first n-type coil metal layer are positioned on the third insulating layer; the fourth insulating layer covers the first p-type coil metal layer and the first n-type coil metal layer; the fifth insulating layer covers the second p-type coil metal layer and the second n-type coil metal layer; the sixth insulating layer covers the second p-type coil metal layer and the second n-type coil metal layer.
7. The Micro-LED self heat dissipating device according to claim 1, wherein the flip-chip Micro LED structure comprises a buffer substrate, an N-type gan layer fixed on the bottom of the buffer substrate, a light emitting layer, an insulating spacer or independent metal layer, an LED negative electrode, a P-type gan layer located on the bottom of the light emitting layer, a highly reflective positive electrode located on the bottom of the P-type gan layer, and a ferromagnetic metal layer located under the insulating spacer or independent metal layer, wherein the light emitting layer, the insulating spacer or independent metal layer, and the LED negative electrode are all located on the bottom of the N-type gan layer, and the insulating spacer or independent metal layer is located between the light emitting layer and the LED negative electrode.
8. A manufacturing method of a Micro-LED self-radiating device is characterized by comprising the following steps:
s1: depositing a first insulating material layer on a substrate, etching the first insulating material layer and forming first insulating layers arranged in an array and first grooves positioned between adjacent first insulating layers;
s2, forming a p-type thermoelectric material unit in the first groove, and forming an n-type thermoelectric material unit on the first insulating layer, wherein the p-type thermoelectric material unit and the n-type thermoelectric material unit are concave-convex;
s3, depositing a second insulating layer material layer, and etching to form a second insulating layer which is positioned on the first insulating layer and covers the n-type thermoelectric material unit and a second groove which is positioned on the p-type thermoelectric material unit;
s4, depositing a third insulating material layer to form a third insulating layer on the p-type thermoelectric material unit and in the second groove and a third insulating layer on the n-type thermoelectric material unit; then, etching the third insulating layer to form a first via hole located on the p-type thermoelectric material unit and a second via hole located on the n-type thermoelectric material unit;
s5, depositing a coil metal layer, and etching the coil metal layer to form a coil metal layer connected between the first via hole and the second via hole;
s6, depositing a fourth insulating layer material layer, and etching to form a fourth insulating layer covering the coil metal layer, wherein the fourth insulating layer is positioned on the coil metal layer in the second groove 32 and on the coil metal layer on the n-type thermoelectric material unit;
s7, depositing a Micro-LED electrode metal layer, and etching to form a Micro-LED anode positioned above the p-type thermoelectric material unit and a Micro-LED cathode positioned above the n-type thermoelectric material unit;
s8, respectively dotting tin bumps on the Micro-LED positive electrode and the Micro-LED negative electrode; then transferring the inverted Micro LED structure and welding the inverted Micro LED structure on the tin bump; and finally, packaging by packaging materials.
9. A manufacturing method of a Micro-LED self-radiating device is characterized by comprising the following steps:
s1: depositing a first insulating material layer on a substrate, etching the first insulating material layer and forming first insulating layers arranged in an array and first grooves positioned between adjacent first insulating layers;
s2, forming a p-type thermoelectric material unit in the first groove, and forming an n-type thermoelectric material unit on the first insulating layer, wherein the p-type thermoelectric material unit and the n-type thermoelectric material unit are concave-convex;
s3, depositing a second insulating layer material layer, and etching to form a second insulating layer which is positioned on the first insulating layer and covers the n-type thermoelectric material unit and a second groove which is positioned on the p-type thermoelectric material unit;
s4, depositing a third insulating material layer to form a third insulating layer which is positioned on the p-type thermoelectric material unit and in the second groove and a third insulating layer which is positioned on the n-type thermoelectric material unit; then, etching the third insulating layer to form a first via hole located on the p-type thermoelectric material unit and a second via hole located on the n-type thermoelectric material unit;
s5, depositing a first coil metal layer, and etching the first coil metal layer to form a first p-type coil metal layer connected with the p-type thermoelectric material unit through the first via hole and a first n-type coil metal layer connected with the n-type thermoelectric material unit through the second via hole;
s6, depositing a fourth insulating layer material layer, etching to form a fourth insulating layer covering the first coil metal layer, and then etching the fourth insulating layer to form a third via hole located on the first p-type coil metal layer and a fourth via hole located on the first n-type coil metal layer;
s7, depositing a second coil metal layer, and etching the second coil metal layer to form a second p-type coil metal layer connected with the first p-type coil metal layer through a third through hole and a second n-type coil metal layer connected with the first n-type coil metal layer through a fourth through hole;
s8, depositing a fifth insulating layer material layer, etching to form a fifth insulating layer covering the second coil metal layer, and then etching the fifth insulating layer to form a fifth via hole located on the second p-type coil metal layer and a sixth via hole located on the second n-type coil metal layer;
s9, depositing a third coil metal layer, and etching the third coil metal layer to form a third p-type coil metal layer connected with the second p-type coil metal layer through a fifth through hole and a third n-type coil metal layer connected with the second n-type coil metal layer through a sixth through hole;
s10, depositing a sixth insulating layer material layer, etching to form a sixth insulating layer covering the third coil metal layer, and then etching the sixth insulating layer to form a seventh via hole located on the third p-type coil metal layer and an eighth via hole located on the third n-type coil metal layer;
s11, depositing a fourth coil metal layer, and etching the fourth coil metal layer to form a coil bridging metal layer which is connected through a seventh through hole and an eighth through hole;
s12, depositing a seventh insulating layer covering the fourth coil metal layer; then depositing a Micro-LED electrode metal layer, and etching to form a Micro-LED anode positioned above the p-type thermoelectric material unit and a Micro-LED cathode positioned above the n-type thermoelectric material unit;
s13, respectively dotting tin bumps on the Micro-LED positive electrode and the Micro-LED negative electrode; then transferring the inverted Micro LED structure and welding the inverted Micro LED structure on the tin bump; and finally, packaging through packaging materials.
10. The method for manufacturing a Micro-LED self-heat sink according to claim 8 or 9, wherein the step S2 specifically includes the steps of:
s21, depositing a first hot metal layer, and etching the first hot metal layer to form a hot end cathode located in the first groove and a hot end anode located on the first insulating layer;
s22, depositing a p-type material layer, and etching the p-type material layer to form a p-type thermoelectric material on the hot-end cathode;
s23, depositing a second cold metal layer, and etching the second cold metal layer to form a first p-type cold end positioned on the p-type thermoelectric material and a first n-type cold end positioned on the hot-end anode;
s24, depositing an n-type thermoelectric material, and etching the n-type thermoelectric material layer to form an n-type thermoelectric material on the first n-type cold side;
s25, depositing a third cold metal layer, etching the third cold metal layer to form a second p-type cold side on the first p-type cold side and a second n-type cold side on the n-type thermoelectric material.
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