CN112420520A - Method for inducing semiconductor oxide crystallization by using metal - Google Patents
Method for inducing semiconductor oxide crystallization by using metal Download PDFInfo
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- CN112420520A CN112420520A CN202011320326.4A CN202011320326A CN112420520A CN 112420520 A CN112420520 A CN 112420520A CN 202011320326 A CN202011320326 A CN 202011320326A CN 112420520 A CN112420520 A CN 112420520A
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- 238000000034 method Methods 0.000 title claims abstract description 17
- 238000002425 crystallisation Methods 0.000 title claims abstract description 16
- 230000008025 crystallization Effects 0.000 title claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 12
- 239000002184 metal Substances 0.000 title claims abstract description 12
- 239000004065 semiconductor Substances 0.000 title abstract description 18
- 230000001939 inductive effect Effects 0.000 title abstract description 6
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 18
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 10
- 238000002360 preparation method Methods 0.000 claims abstract description 10
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 8
- 229910052738 indium Inorganic materials 0.000 claims abstract description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 5
- 239000010409 thin film Substances 0.000 claims description 21
- 238000000151 deposition Methods 0.000 claims description 19
- 230000008021 deposition Effects 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 9
- 239000010408 film Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000002955 isolation Methods 0.000 claims description 6
- 230000003197 catalytic effect Effects 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract description 13
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 abstract description 10
- 239000011701 zinc Substances 0.000 abstract description 4
- 238000000137 annealing Methods 0.000 abstract description 3
- 239000003054 catalyst Substances 0.000 abstract description 2
- 230000000694 effects Effects 0.000 abstract description 2
- 230000006698 induction Effects 0.000 abstract description 2
- VUFNLQXQSDUXKB-DOFZRALJSA-N 2-[4-[4-[bis(2-chloroethyl)amino]phenyl]butanoyloxy]ethyl (5z,8z,11z,14z)-icosa-5,8,11,14-tetraenoate Chemical compound CCCCC\C=C/C\C=C/C\C=C/C\C=C/CCCC(=O)OCCOC(=O)CCCC1=CC=C(N(CCCl)CCCl)C=C1 VUFNLQXQSDUXKB-DOFZRALJSA-N 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 239000013078 crystal Substances 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 239000002159 nanocrystal Substances 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- 229910005265 GaInZnO Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 238000002524 electron diffraction data Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02592—Microstructure amorphous
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
Abstract
The invention belongs to the technical field of semiconductor preparation, and provides a method for inducing semiconductor oxide crystallization by using metal. The alpha-IGZO film with the atomic percentage of In, Ga and Zn being 1:1:1 is deposited by magnetron sputtering to be used as a channel, then aluminum is deposited to be used as a catalyst layer, the annealing temperature can be reduced to 400 ℃ or below, and the limitation condition of a future flexible bottom plate is met. The metal induction method has the advantages of low cost, easy implementation and good effect. The crystallized gallium indium zinc oxide transistor has high performance and parameters superior to those of an amorphous semiconductor in many aspects.
Description
Technical Field
The invention belongs to the technical field of semiconductor preparation, and particularly relates to a method for inducing semiconductor oxide crystallization by using metal.
Background
The Thin Film Transistor (TFT) is used as a switch and a driving device to control the pixel unit of the display, and is a core technology of flat panel display. TFTs currently used for flat panel display devices are mainly: hydrogenated amorphous silicon thin film transistors (a-Si: H TFTs), low temperature polysilicon thin film transistors (LTPS TFTs), and Oxide thin film transistors (Oxide TFTs). The preparation cost of the a-Si-H TFT is lowBut with lower mobility (-1 cm)-2v-1S-1) The use requirements of the OLED cannot be met. Although the mobility of the LTPS TFT is high enough, the higher preparation cost of the LTPS TFT greatly increases the price of a display product; in addition, LTPS TFTs have poor uniformity and cannot be used for large-size displays.
Professor hosano of tokyo institute of technology, 2004 reported amorphous gallium indium zinc oxide semiconductor transistors. Since the carrier mobility is 20-30 times higher than that of crystalline silicon and the fabrication temperature is low, the leakage current is small and is of great interest. Since the advent of gallium indium zinc oxide semiconductors, many breakthroughs have been made, and c-axis crystalline gallium indium zinc oxide is an oxide between a nanocrystal and a monocrystal, has magical characteristics of an unobvious grain boundary, and therefore has an exceptionally high carrier mobility, even more than twice that of an amorphous oxide semiconductor, and therefore has a very high development prospect.
Oxide TFT represented by amorphous indium gallium zinc Oxide thin film transistor (a-IGZO TFT) having high mobility>10cm-2v-1S-1) Low manufacturing cost and high consistency, and has great potential to become an OLED display driving device. The C-axis symmetric crystal indium gallium zinc oxide thin film transistor (CAAC IGZO TFT) is a novel oxide thin film transistor and is mainly characterized in that a large number of IGZO nano-crystal grains which are symmetrically crystallized along the C-axis direction exist in an IGZO active layer, and the IGZO nano-crystal grains are embedded in an amorphous IGZO system. The most important advantage of the CAAC IGZO TFT is excellent bias reliability, making it the most competitive flat panel display device pixel circuit driving device candidate. However, the CAAC IGZO TFT active layer is generally prepared at a relatively high temperature, and may be limited in use in applications such as flexible displays. Therefore, how to complete the crystallization process of gallium indium zinc oxide at a low temperature becomes an important factor limiting the development of oxide semiconductors.
In the preparation method of the oxide thin film transistor of patent CN 109524476 a and the preparation method of the array substrate, the amorphous active layer is crystallized by using a laser with a wavelength of 150nm-350nm, and the method needs special additional equipment, which increases the production cost.
In a crystallization method of an oxide semiconductor layer of patent CN 105679646A, a semiconductor device and a manufacturing method thereof, an active layer crystallized at a temperature of 200 ℃ to 350 ℃ is obtained by adjusting the atomic percentages of In, Ga and Zn In the oxide to 1:1: 1.10-1.25. And the applicability to oxide semiconductors with other atomic percentages is poor, and the application range is narrow.
Disclosure of Invention
Aiming at the problem that the IGZO crystal is difficult to form at low temperature at present, the invention provides a method for inducing the IGZO crystal at low temperature by using aluminum, which has low cost and simple and convenient operation.
In order to achieve the purpose, the invention adopts the following technical scheme.
A preparation method of a thin film transistor based on a metal induced crystallization process comprises the following steps:
(1) growing a layer of SiO on the substrate2As an isolation layer;
(2) depositing an alpha-IGZO film with the atomic percentage of In, Ga and Zn being 1:1:1 on the isolation layer as a channel under Ar atmosphere;
(3) respectively depositing a source electrode and a drain electrode at two ends of the channel in Ar atmosphere;
(4) depositing aluminum on a channel between the source electrode and the drain electrode to serve as a catalytic layer;
(5) and (3) performing heat treatment at the temperature of 300-350 ℃ to complete induced crystallization, and cooling to obtain the thin film transistor.
Further, the substrate may be a rigid substrate or a flexible substrate.
Further, the thickness of the alpha-IGZO thin film is 20 nm.
In the step (2), magnetron sputtering deposition is adopted for deposition, the radio frequency power is 70W, the gas flow is 4sccm, and the chamber pressure is 4 mtorr.
Furthermore, the source electrode and the drain electrode are non-transparent conductive films, such as one or a combination of more of conductive metals such as Al, Cr, Mo and the like; or a transparent conductive film, such as one or more of ITO, AZO, InO, and the like.
In the step (3), the deposition adopts magnetron sputtering deposition, the radio frequency power is 50W, the gas flow is 4sccm, and the chamber pressure is 4 mtorr. After the step (3), the width of the channel is 300 μm and the length is 100 μm.
Further, the thickness of the catalytic layer was 5 nm.
The thin film transistor obtained by the preparation method comprises a grid electrode, an isolation layer covering the grid electrode, a channel, a source electrode and a drain electrode. The two ends of the channel region are respectively provided with a source electrode and a drain electrode, the source electrode and the drain electrode partially cover the end part of the channel, and the channel is C-axis crystalline gallium indium zinc oxide. The channel is covered
The invention has the following advantages:
compared with the traditional solid phase crystallization method, the method for inducing the crystallization of the semiconductor oxide by using the aluminum has the advantages of low crystallization temperature, high crystallization speed, good uniformity and low cost. In the crystallization step, in the annealing process of the metal catalyst layer connected with the surface of the amorphous semiconductor, firstly, the covalent bonds near the metal/a-IGZO interface are disordered, and secondly, the semiconductor covalent bonds are broken, rearranged and generated, cluster nucleation is promoted through indirect reaction, and the activation energy of amorphous phase to crystalline phase conversion is reduced, so that the annealing temperature can be reduced to 400 ℃ or below, and the limitation condition of a future flexible bottom plate is met. The metal induction method has the advantages of low cost, easy implementation and good effect. The crystallized gallium indium zinc oxide transistor has high performance and parameters superior to those of an amorphous semiconductor in many aspects.
Drawings
FIG. 1 is a schematic diagram of an IGZO transistor fabrication process;
FIG. 2 is a TEM and diffractogram of IGZO on a transistor;
FIG. 3 is a graph of the transfer characteristics of a GaInZnO transistor, where A is an α -IGZO TFT and B is a CAAC IGZO TFT.
Detailed Description
The present invention will be further described with reference to the following examples and drawings, but the present invention is not limited to the following examples.
Example 1 preparation of thin film transistor
According to the structure shown in fig. 1, a thin film transistor was fabricated according to the following steps:
(1) selecting 300nm p-type heavily-doped silicon oxide as bottom gate, and growing a layer of SiO on the bottom gate2As an isolation layer;
(2) depositing an alpha-IGZO film with the atomic percentages of In, Ga and Zn of 1:1:1 on the isolating layer by magnetron sputtering under Ar atmosphere to serve as a channel, wherein the thickness of the alpha-IGZO film is 20 nm; magnetron sputtering deposition parameters: the radio frequency power is 70W, the gas flow is 4sccm, and the chamber pressure is 4 mtorr;
(3) respectively depositing ITO at two ends of the channel as a source electrode and a drain electrode by adopting magnetron sputtering under Ar atmosphere, so that the width and the length of the channel are respectively 300 mu m and 100 mu m; magnetron sputtering deposition parameters: the radio frequency power is 50W, the gas flow is 4sccm, and the chamber pressure is 4 mtorr;
(4) depositing aluminum with the thickness of 15nm on a channel between the source electrode and the drain electrode by using a shadow mask to serve as a catalytic layer;
(5) and (3) performing heat treatment at 300 ℃ to complete induced crystallization, and cooling to obtain the thin film transistor CAAC IGZO TFT.
Transmission electron microscope observation was performed on the thin film transistor CAAC IGZO TFT to obtain a TEM picture and an electron diffraction pattern as shown in fig. 2. As can be seen from fig. 2 (a), an aluminum oxide layer of 4nm was formed on the surface of IGZO layer, and the selected region in (a) was enlarged to obtain fig. 2 (B), and two points A, B were selected to perform electron diffraction to obtain graphs (a) and (B) whose patterns correspond to C-axis crystalline gallium indium zinc oxide.
The thin film transistor α -IGZO TFT was fabricated according to the above procedure, and the steps (4) and (5) were omitted.
EXAMPLE 2 characteristic parameters and transfer characteristics of thin film transistor
The transfer characteristic curves of the α -IGZO TFT and the CAAC IGZO TFT of example 1 were tested under the conditions of drain voltages of 5.1V and 0.1V (fig. 2). It can be seen that the threshold voltage of the transfer characteristic is close to 0V, the leakage current is at a lower level around 10-12A in the channel-off state, and the channel current rapidly increases and rises to a higher level in the channel-on phase.
TABLE 1 characteristic parameters of two GaInZnO transistors
For further illustration, table 1 lists the characteristic parameters of two gallium indium zinc oxide transistors in example 1, and it can be seen that the c-axis crystalline gallium indium zinc oxide transistor μFE(degree of electromigration) was higher at 58.16 cm2The lower value of/Vs, SS (sub-threshold swing amplitude) is 0.35V/decade, VTH(threshold voltage) 0.28V near 0V, ION/OFF(switching Current) is 1.31X 107A, these parameters are all improved compared with the amorphous indium gallium zinc oxide transistor.
Claims (6)
1. A preparation method of a thin film transistor based on a metal induced crystallization process is characterized by comprising the following steps:
(1) growing a layer of SiO on the substrate2As an isolation layer;
(2) depositing an alpha-IGZO film with the atomic percentage of In, Ga and Zn being 1:1:1 on the isolation layer as a channel under Ar atmosphere;
(3) respectively depositing a source electrode and a drain electrode at two ends of the channel in Ar atmosphere;
(4) depositing aluminum on a channel between the source electrode and the drain electrode by magnetron sputtering to serve as a catalytic layer;
(5) and (3) performing heat treatment at the temperature of 300-350 ℃ to complete induced crystallization, and cooling to obtain the thin film transistor.
2. The production method according to claim 1, wherein the substrate is a rigid substrate or a flexible substrate.
3. The production method according to claim 1, wherein the thickness of the α -IGZO thin film is 20 nm.
4. The method according to claim 1, wherein the source and drain electrodes are non-transparent conductive films, such as one or more of Al, Cr, Mo, and other conductive metals; or a transparent conductive film, such as one or more of ITO, AZO, InO, and the like.
5. The method according to claim 1, wherein in the step (2), the deposition is performed by magnetron sputtering deposition, the radio frequency power is 70W, the gas flow rate is 4sccm, and the chamber pressure is 4 mtorr;
in the step (3), the deposition adopts magnetron sputtering deposition, the radio frequency power is 50W, the gas flow is 4sccm, and the chamber pressure is 4 mtorr.
6. The production method according to claim 1, wherein after the step (3), the channel has a width of 300 μm and a length of 100 μm.
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| CN202011320326.4A CN112420520A (en) | 2020-11-23 | 2020-11-23 | Method for inducing semiconductor oxide crystallization by using metal |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114438449A (en) * | 2021-12-30 | 2022-05-06 | 中国科学院宁波材料技术与工程研究所 | Metal-assisted gallium oxide crystalline thin film and preparation method thereof |
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| CN103972110A (en) * | 2014-04-22 | 2014-08-06 | 京东方科技集团股份有限公司 | Thin film transistor, manufacturing method thereof, array substrate and display device |
| CN105185695A (en) * | 2015-08-21 | 2015-12-23 | 京东方科技集团股份有限公司 | Oxide semiconductor film preparation method and thin film transistor preparation method |
| CN106024639A (en) * | 2016-07-21 | 2016-10-12 | 深圳市华星光电技术有限公司 | Manufacturing method of LTPS TFT based on metal induced crystallization process |
| CN110634882A (en) * | 2018-06-25 | 2019-12-31 | 三星电子株式会社 | Semiconductor device and method for manufacturing the same |
-
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- 2020-11-23 CN CN202011320326.4A patent/CN112420520A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102683197A (en) * | 2011-03-11 | 2012-09-19 | 株式会社半导体能源研究所 | Method of manufacturing semiconductor device |
| CN102842620A (en) * | 2012-09-11 | 2012-12-26 | 京东方科技集团股份有限公司 | Thin film transistor and manufacturing method thereof as well as array substrate and display device |
| CN103972110A (en) * | 2014-04-22 | 2014-08-06 | 京东方科技集团股份有限公司 | Thin film transistor, manufacturing method thereof, array substrate and display device |
| CN105185695A (en) * | 2015-08-21 | 2015-12-23 | 京东方科技集团股份有限公司 | Oxide semiconductor film preparation method and thin film transistor preparation method |
| CN106024639A (en) * | 2016-07-21 | 2016-10-12 | 深圳市华星光电技术有限公司 | Manufacturing method of LTPS TFT based on metal induced crystallization process |
| CN110634882A (en) * | 2018-06-25 | 2019-12-31 | 三星电子株式会社 | Semiconductor device and method for manufacturing the same |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114438449A (en) * | 2021-12-30 | 2022-05-06 | 中国科学院宁波材料技术与工程研究所 | Metal-assisted gallium oxide crystalline thin film and preparation method thereof |
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