CN104576759A - Metal oxide semiconductor thin film transistor and manufacturing method thereof - Google Patents

Metal oxide semiconductor thin film transistor and manufacturing method thereof Download PDF

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Publication number
CN104576759A
CN104576759A CN201510039672.8A CN201510039672A CN104576759A CN 104576759 A CN104576759 A CN 104576759A CN 201510039672 A CN201510039672 A CN 201510039672A CN 104576759 A CN104576759 A CN 104576759A
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China
Prior art keywords
metal oxide
oxide semiconductor
drain electrode
source electrode
electrode
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CN201510039672.8A
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Chinese (zh)
Inventor
王漪
周晓梁
丛瑛瑛
赵飞龙
董俊辰
韩德栋
张盛东
刘晓彦
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北京大学
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Priority to CN201510039672.8A priority Critical patent/CN104576759A/en
Publication of CN104576759A publication Critical patent/CN104576759A/en

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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725Source or drain electrodes for field effect devices
    • H01L29/41733Source or drain electrodes for field effect devices for thin film transistors with insulated gate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66969Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

The invention discloses a metal oxide semiconductor thin film transistor and a manufacturing method of the metal oxide semiconductor thin film transistor, and belongs to the field of semiconductor integrated circuits, panel display and related manufacturing technologies of the semiconductor integrated circuits. According to the core of the metal oxide semiconductor thin film transistor and the manufacturing method, a source electrode and a drain electrode which are each of a laminated structure are adopted, metal oxide semiconductor thin films are arranged on the lower layers of the electrodes, and conductive thin films are arranged on the upper layers of the electrodes. Materials identical with or different from those of a channel active layer are adopted for the metal oxide thin films on the lower layers of the laminated source electrode and the laminated drain electrode, the electrical conductivity of the metal oxide thin films on the lower layers of the laminated source electrode and the laminated drain electrode is lower than that of a metal oxide thin film of the active layer, and the two metal oxide thin films are formed in a radio frequency magnetron sputtering method. The metal oxide semiconductor thin film transistor has the advantages of being high in high migration rate, low in off-state current, large in switching current ratio and the like; compared with traditional structure devices, process complexity is not increased, the manufacturing method is compatible with the traditional CMOS process, practical value is high, and the metal oxide semiconductor thin film transistor is expected to be applied to TFT integrated circuits in the future.

Description

A kind of metal oxide semiconductor films transistor and preparation method thereof

Technical field

The invention belongs to semiconductor integrated circuit manufacture and flat display field, be specifically related to metal oxide semiconductor films transistor of a kind of source/drain laminated construction and preparation method thereof.

Background technology

The mainstream technology of information displaying is developed into gradually along with flat panel display, flat panel display industry becomes the most potential electronics and information industry, and the liquid crystal display (LCD) of its main flow becomes one of pillar industry in electronics and information industry.Thin-film transistor (TFT) is the core devices of flat panel display, and the flat panel display of any active array addressing all depends on TFT and controls and drive.In order to adapt to the development of flat panel display large area, high-quality, low cost and high reliability, more and more higher to the requirement of TFT device.At present, the TFT technology of various display is widely used in based on amorphous silicon hydride (a-Si:H) and low temperature polycrystalline silicon (LTPS) technology.Be limited to the low carrier mobility of non-crystalline silicon tft, its element that cannot be applied to flat panel display peripheral driving circuit is integrated, and can not meet the requirement of flat panel display of future generation to high definition image quality, can not adapt to OLED current mode drive display screen.Low temperature polycrystalline silicon TFT has higher carrier mobility on the other hand, high definition of future generation display can be met, be adapted to OLED current mode drive display screen, and be expected to realize the Systemon-board (System on panel, SOP) that display matrix and peripheral driver are integrated in same panel.But, current LTPS technology can not meet large scale display to the uniformity of technique and coherence request, therefore it is mainly towards the application of small-medium size display screen, and the preparation technology of LTPS is relatively complicated in addition, the high LTPS TFT that also constrains of cost of manufacture applies more widely.In order to adapt to the growth requirement of flat panel display, the research of novel TFT technology receives to be paid close attention to widely.At present, the Zinc oxide-base metal oxide TFT being representative with indium oxide gallium tin (IGZO) studies the most extensive, and is expected to realize volume production in the near future.

The TFT technology of Zinc oxide-base integrates amorphous silicon hydride and low temperature polycrystalline silicon TFT advantage, is expected to be applied in the flat-panel monitor of large screen dimensions.Its active layer, source-drain electrode and gate electrode etc. use semiconductor material with wide forbidden band, can produce all-transparent panel display screen; Lower technological temperature can meet the glass substrate or plastic flexible substrate that use cheapness; Large-area uniformity adapts to the requirement of large-size screen monitors display; High carrier mobility can meet the requirement of flat panel display high definition image quality of future generation, and is applicable to OLED current mode drive; Active layer sputtering technology is mutually compatible with semiconductor product industry CMOS technology.For Zinc oxide-base TFT, how Optimization Technology, while raising device performance, reduce manufacturing cost, be one of its important research direction.In addition, the exploitation of new device structure is also the important directions improving device performance.The present invention proposes a kind of TFT device fabrication techniques scheme, under the condition of basic TFT device making technics, propose metal oxide semiconductor films transistor device structures of a kind of source/drain laminated construction and preparation method thereof simultaneously.

Summary of the invention

The object of the invention is metal oxide semiconductor films transistor providing a kind of source/drain laminated construction and preparation method thereof.

Technical scheme of the present invention is:

A kind of metal oxide semiconductor films transistor of source/drain laminated construction, comprise gate electrode, gate medium, active area, source electrode and drain electrode, described gate electrode is positioned at substrate, gate medium is positioned on gate electrode, active area is positioned on gate medium, source electrode and drain electrode lay respectively on active area, it is characterized in that, described active area is metal oxide semiconductor films, described source electrode and drain electrode are by upper, lower double-layer films composition laminated construction, wherein lower film is identical or different material metal sull with active area, topmost thin film is conductive film, and active area metal oxide semiconductor films conductivity or carrier concentration are higher than the lower metal oxide semiconductor thin-film of source electrode or drain electrode, its preparation process comprises:

(1) grow layer of conductive film on a glass substrate, adopt etching or stripping technology to form gate electrode;

(2) grow one deck insulating medium layer, etching forms gate medium;

(3) sputtering growth layer of metal sull, adopts etching or stripping technology to be formed with source region;

(4) resist coating, exposure, development definition source electrode and drain electrode patterns, sputtering growth layer of metal sull;

(5) sputtering growth layer of conductive film, adopts stripping technology to form laminated construction source electrode and drain electrode.

In step (1), gate electrode is one in Al, Ti, Cr non-transparent metals or ITO, AZO, InO transparent conductive film.

In step (2), gate dielectric material is one or more the combination in silicon dioxide, silicon nitride and high dielectric constant insulating material.

In step (3), active layer metal oxide is for adopting radiofrequency magnetron sputtering technology growth, thickness is 10 ~ 40 nanometers, and its material is one or several combinations that indium oxide gallium zinc (IGZO) or zinc oxide (ZnO) and doping system thereof comprise in III or the IV race elements such as tin (Sn), indium (In), gallium (Ga), aluminium (Al); Pattern definition method be etching or stripping technology in one.

In step (2) and (3), gate medium and active area metal oxide can grow continuously, and use same mask plate to define figure.

In step (4), the lower metal sull of source electrode and drain electrode adopts radiofrequency magnetron sputtering technology growth, and its material is one or several combinations that indium oxide gallium zinc (IGZO) or zinc oxide (ZnO) and doping system thereof comprise in III or the IV race elements such as tin (Sn), indium (In), gallium (Ga), aluminium (Al).

The lower film of source electrode and drain electrode is be identical or different material metal oxide with the selection of active area, and thickness is greater than 20 nanometers; When for same metal oxide, the lower film oxygen content of laminated construction source electrode and drain electrode is higher than active area, and can realize by regulating the difference of the partial pressure of oxygen in sputter procedure, partial pressure of oxygen when wherein sputtering active area metal oxide is higher; When for different metal oxides, the lower film conductivity of laminated construction source electrode and drain electrode is lower than active area, or carrier concentration is lower than active area.

In step (5), the Upper conductive film of laminated construction source electrode and drain electrode is one in Al, Ti, Cr non-transparent metals or ITO, AZO, InO transparent conductive film.

In step (4) and (5), laminated construction source electrode and drain electrode use same mask version by upper and lower double-layer films, and laminated construction source electrode and there is overlapping region between drain electrode and gate electrode.

Advantage of the present invention:

The present invention adopts traditional TFT framework, first growth, photoetching, gate electrode is etched, then gate medium is grown, then sputtering deposit active layer define figure, more then the lower metal oxide semiconductor thin-film of deposit lamination source electrode and drain electrode and Upper conductive film.Gate medium of the present invention and active layer can grow to lower the boundary defect density of states continuously, improve device reliability.Device channel material is carrier concentration higher metal oxide semiconductor thin-film, effectively improves device mobility, can obtain larger ON state current.In OFF state service area, comparatively thin active layer carriers effectively exhausts, and the lower metal oxide semiconductor conductivity of lamination source electrode and drain electrode is low, and resistance is large, and the total OFF resistance of device is large, effectively reduces device off-state current.The new structure metal oxide thin-film transistor using the present invention to prepare has the advantage such as higher on-off ratio, less subthreshold swing, and process complexity does not improve simultaneously.Therefore the present invention is expected to alternative INVENTIONConventional metal-oxide film transistor device structure, has higher practical value, is expected to be widely used in microelectronics and dull and stereotyped display industries.

Accompanying drawing explanation

Fig. 1 is the generalized section of the metal oxide semiconductor films transistor of source/drain laminated construction of the present invention;

Fig. 2 (a) ~ (c) sequentially show the main technological steps of the embodiment of the preparation method of the metal oxide semiconductor films transistor of source/drain laminated construction of the present invention.

1-substrate in above-mentioned figure; 2-gate electrode; 3-gate medium; 4-active area metal oxide semiconductor films; The lower metal oxide semiconductor thin-film of 5-lamination source, drain electrode; The Upper conductive film of 6-lamination source, drain electrode.

Embodiment

Below in conjunction with Figure of description, by example, the present invention will be further described.

The metal oxide semiconductor films transistor of source/drain laminated construction of the present invention is formed in glass substrate, as depicted in figs. 1 and 2.This thin-film transistor comprises gate electrode, gate medium, active area, laminated construction source electrode and drain electrode.Gate electrode is positioned at substrate, and gate medium is positioned on gate electrode, and active area is positioned on gate medium, and source electrode and drain electrode lay respectively on active area.

An embodiment of the preparation method of the metal oxide semiconductor films transistor of source/drain laminated construction of the present invention, by shown in Fig. 2 (a) to Fig. 2 (c), comprises the following steps:

(1) in glass substrate 1, rf magnetron sputtering grows the transparent conductive metal oxide ito thin film of one deck about 110 nanometer thickness, and then photoetching and etching form gate electrode 2, as shown in Fig. 2 (a);

(2) positive glue is coated with on the glass sheet, exposure imaging;

(3) chemical vapor deposition techniques is made to grow the silicon dioxide gate dielectric layer 3 of one deck 100 ~ 150 nanometer thickness, as shown in Fig. 2 (b);

(4) use the metal oxide semiconductor layer 4 that the conductivity of rf magnetron sputtering deposit one deck 10 ~ 40 nanometer thickness is higher, passing into gas in sputter procedure is argon gas, and namely partial pressure of oxygen is 0%, at room temperature sputters, as shown in Fig. 2 (b);

(5) use stripping technology, obtain gate medium and active layer pattern, as shown in Fig. 2 (b);

(6) positive glue is coated with on the glass sheet, exposure imaging;

(7) rf magnetron sputtering deposit one deck is used to be greater than the lower metal oxide semiconductor layer of the low conductivity of 20 nanometer thickness, as the lower metal sull 5 of lamination source electrode and drain electrode, pass into oxygen in sputter procedure and compare 15%:85% with argon gas, at room temperature sputter, as shown in Fig. 2 (c);

(8) the transparent conductive metal oxide ito thin film of rf magnetron sputtering deposit one deck about 110 nanometer thickness is used, as the Upper conductive film 6 of lamination source electrode and drain electrode, as shown in Fig. 2 (c).

It is finally noted that, the object publicizing and implementing mode is to help to understand the present invention further, but it will be appreciated by those skilled in the art that: without departing from the spirit and scope of the invention and the appended claims, various substitutions and modifications are all possible.Therefore, the present invention should not be limited to the content disclosed in embodiment, and the scope that the scope of protection of present invention defines with claims is as the criterion.

Claims (8)

1. a metal oxide semiconductor films transistor, comprise gate electrode, gate medium, active area, source electrode and drain electrode, described gate electrode is positioned at substrate, gate medium is positioned on gate electrode, active area is positioned on gate medium, source electrode and drain electrode lay respectively on active area, it is characterized in that, described active area is metal oxide semiconductor films, described source electrode and drain electrode are respectively by upper, lower double-layer films composition laminated construction, wherein the lower film of source electrode or drain electrode is metal-oxide film, the topmost thin film of source electrode or drain electrode is conductive film, and active area metal oxide semiconductor films conductivity or carrier concentration are higher than the lower metal oxide semiconductor thin-film of source electrode or drain electrode.
2. metal oxide semiconductor films transistor as claimed in claim 1, it is characterized in that, gate electrode is the one in a kind of or ITO, AZO, InO transparent conductive film in Al, Ti, Cr non-transparent metals.
3. metal oxide semiconductor films transistor as claimed in claim 1, it is characterized in that, gate dielectric material is one or more the combination in silicon dioxide, silicon nitride and high dielectric constant insulating material.
4. metal oxide semiconductor films transistor as claimed in claim 1, it is characterized in that, active area metal oxide semiconductor films thickness is 10 ~ 40 nanometers, and material is one or several combinations that indium oxide gallium zinc or zinc oxide and doping system thereof comprise in III or the IV race elements such as tin, indium, gallium, aluminium.
5. metal oxide semiconductor films transistor as claimed in claim 1, it is characterized in that, the lower film of source electrode or drain electrode is identical or different material metal oxide semiconductor with active area, and thickness is greater than 20 nanometers; When for same metal oxide, the lower film metal oxide oxygen content of source electrode or drain electrode is higher than active area metal oxide.
6. metal oxide semiconductor films transistor as claimed in claim 1, is characterized in that, source electrode and there is overlapping region between drain electrode and gate electrode.
7. metal oxide semiconductor films transistor as claimed in claim 1, is characterized in that, the Upper conductive film of source electrode or drain electrode is the one in a kind of or ITO, AZO, InO transparent conductive film in Al, Ti, Cr non-transparent metals.
8. prepare a method for metal oxide semiconductor films transistor as claimed in claim 1, its step comprises:
1) grow layer of conductive film on a glass substrate, adopt etching or stripping technology to form gate electrode;
2) then grow one deck insulating medium layer, etching forms gate medium;
3) then adopt radiofrequency magnetron sputtering technology growth layer of metal sull, adopt etching or stripping technology to be formed with source region;
4) resist coating, exposure, development define source electrode and drain electrode patterns again, adopt radiofrequency magnetron sputtering technology growth layer of metal sull;
5) again adopt radiofrequency magnetron sputtering technology growth layer of conductive film, adopt stripping technology finally to form source electrode and drain electrode.
CN201510039672.8A 2015-01-27 2015-01-27 Metal oxide semiconductor thin film transistor and manufacturing method thereof CN104576759A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106549041A (en) * 2016-11-04 2017-03-29 东莞市联洲知识产权运营管理有限公司 A kind of high thin film transistor (TFT) of effective power

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201320341A (en) * 2011-09-23 2013-05-16 Semiconductor Energy Lab Semiconductor device
US20140291673A1 (en) * 2013-03-27 2014-10-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20140319516A1 (en) * 2013-04-24 2014-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201320341A (en) * 2011-09-23 2013-05-16 Semiconductor Energy Lab Semiconductor device
US20140291673A1 (en) * 2013-03-27 2014-10-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20140319516A1 (en) * 2013-04-24 2014-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106549041A (en) * 2016-11-04 2017-03-29 东莞市联洲知识产权运营管理有限公司 A kind of high thin film transistor (TFT) of effective power
CN106549041B (en) * 2016-11-04 2019-08-02 上海禾馥电子有限公司 A kind of thin film transistor (TFT) that effective power is high

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