CN112419946A - Detection circuit, display panel and detection method - Google Patents
Detection circuit, display panel and detection method Download PDFInfo
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- CN112419946A CN112419946A CN202011239560.4A CN202011239560A CN112419946A CN 112419946 A CN112419946 A CN 112419946A CN 202011239560 A CN202011239560 A CN 202011239560A CN 112419946 A CN112419946 A CN 112419946A
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/006—Electronic inspection or testing of displays and display drivers, e.g. of LED or LCD displays
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/22—Detection or location of defective computer hardware by testing during standby operation or during idle time, e.g. start-up testing
- G06F11/2205—Detection or location of defective computer hardware by testing during standby operation or during idle time, e.g. start-up testing using arrangements specific to the hardware being tested
- G06F11/2221—Detection or location of defective computer hardware by testing during standby operation or during idle time, e.g. start-up testing using arrangements specific to the hardware being tested to test input/output devices or peripheral units
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/22—Detection or location of defective computer hardware by testing during standby operation or during idle time, e.g. start-up testing
- G06F11/2273—Test methods
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Abstract
The application provides a detection circuit, a display panel and a detection method, wherein the detection circuit comprises: a plurality of thin film transistors; a first metal line connected to all the thin film transistors; a plurality of second metal lines, each of which is connected to one of the thin film transistors; the third metal wire, this third metal wire is connected with all second metal wires, and the ductility of second metal wire is less than the ductility of first metal wire and third metal wire, and the detection circuitry that this application provided can improve whether cracked precision that detects is carried out to the display screen.
Description
Technical Field
The present disclosure relates to display technologies, and particularly to a detection circuit, a display panel and a detection method
Background
As the display screen of the electronic device such as the smart phone is larger and larger, and the probability of the display screen being broken due to falling is larger and larger, because the electronic device such as the smart phone generally adopts the touch screen to perform input operations such as sensing input commands or texts, when the display screen is broken due to falling, input faults of the touch screen can be caused, and the phenomenon of input errors can occur.
In the related art, whether the display screen is broken or not is detected by placing a closed metal wire on the display screen. Wherein, when the display screen is cracked, the metal wire is broken. However, when the cracks of the display screen are small, the fracture of the display screen cannot be detected by using the detection method. Therefore, in the related art, the accuracy of the screen fragmentation detection mode is low.
Disclosure of Invention
The embodiment of the application provides a detection circuit, a display panel and a detection method, which can improve the accuracy of detecting whether a display screen is cracked or not.
The embodiment of the application provides a detection circuit, is applied to display panel, includes:
a plurality of thin film transistors;
the first metal wire is connected with all the thin film transistors;
a plurality of second metal lines, each of the second metal lines being connected to one of the thin film transistors; and
a third metal line connected to all of the second metal lines, the second metal lines having a ductility less than the ductility of the first and third metal lines.
In the detection circuit provided in the embodiment of the present application, the arrangement directions of the first metal line and the third metal line are the same;
all of the second metal lines are located between the first metal lines and the third metal lines.
In the detection circuit provided by the embodiment of the application, the ductility of the first metal wire is the same as that of the third metal wire.
In the detection circuit provided by the embodiment of the application, the second metal wire is made of one of a-Si, poly Si and IGZO.
The application further provides a display panel, the display panel comprises a detection circuit, and the detection circuit is the detection circuit in any embodiment of the application.
The embodiment of the present application further provides a detection method, which is applied to a detection circuit, where the detection circuit includes:
a plurality of thin film transistors;
the first metal wire is connected with all the thin film transistors;
a plurality of second metal lines, each of the second metal lines being connected to one of the thin film transistors; and
a third metal line connected to all of the second metal lines, the second metal lines having a ductility less than the ductility of the first and third metal lines,
the method comprises the following steps:
accessing a control signal to the third metal wire to turn on all the thin film transistors so that the first metal wire, the second metal wire and the third metal wire are communicated;
obtaining resistance values of two ends of the first metal wire or the third metal wire;
and judging whether the first metal wire, the second metal wire and the third metal wire break or not according to the resistance value.
In the detection method provided in the embodiment of the present application, the determining whether the first metal line, the second metal line, and the third metal line are broken according to the resistance value includes:
and when the resistance value is within a first resistance value interval, determining that the second metal wire is broken and the first metal wire and the third metal wire are not broken.
In the detection method provided by the embodiment of the application, when the resistance value is within a second resistance value interval, it is determined that the first metal line, the second metal line and the third metal line are all broken, and the first resistance value interval is smaller than the second resistance value interval.
In the detection method provided in the embodiment of the present application, the controlling signal includes a control voltage, and before the accessing the control signal to the third metal line, the method further includes:
obtaining the type of the thin film transistor;
the accessing a control signal to the third metal line includes:
when the type of the thin film transistor is a first type, a first control voltage is connected to the third metal wire;
and when the type of the thin film transistor is a second type, a second control voltage is connected to the third metal wire, and the first control voltage is smaller than the second control voltage.
In the detection method provided by the embodiment of the application, the second metal wire is made of one of a-Si, poly Si and IGZO.
The detection circuit that this application embodiment provided includes: a plurality of thin film transistors; the first metal wire is connected with all the thin film transistors; a plurality of second metal lines, each of the second metal lines being connected to one of the thin film transistors; the third metal wire, the third metal wire is connected with all second metal wires, the ductility of second metal wire is less than first metal wire with the ductility of third metal wire, because the ductility of second metal wire is relatively poor, even the display screen crackle is less, also can make this second metal wire fracture to detect out the display screen cracked, and when the display screen crackle was great, first metal wire, second metal wire and third metal wire all can fracture, thereby detect out the display screen cracked, it is visible, the detection circuitry that this application provided can improve and carry out the precision that detects to the cracked accuracy that detects of display screen.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required in the embodiments are briefly described below. The drawings in the following description are only some embodiments of the present application, and it will be obvious to those skilled in the art that other drawings can be obtained from the drawings without inventive effort.
Fig. 1 is a schematic structural diagram of a display panel according to an embodiment of the present disclosure;
FIG. 2 is a partial schematic diagram of a detection circuit according to an embodiment of the present disclosure;
fig. 3 is a schematic flow chart of a detection method according to an embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present application, it is to be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the present application and for simplicity in description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed in a particular orientation, and be operated in a particular manner, and are not to be construed as limiting the present application. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present application, "a plurality" means two or more unless specifically limited otherwise.
In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; may be mechanically connected, may be electrically connected or may be in communication with each other; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.
In this application, unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may comprise direct contact of the first and second features, or may comprise contact of the first and second features not directly but through another feature in between. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
The following disclosure provides many different embodiments or examples for implementing different features of the application. In order to simplify the disclosure of the present application, specific example components and arrangements are described below. Of course, they are merely examples and are not intended to limit the present application. Moreover, the present application may repeat reference numerals and/or letters in the various examples, such repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. In addition, examples of various specific processes and materials are provided herein, but one of ordinary skill in the art may recognize applications of other processes and/or use of other materials.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a display panel according to an embodiment of the present disclosure. The display panel includes a cover plate 100, a detection circuit 200 located at a peripheral region of the display panel, and a circuit board 300. The detection circuit 200 is connected with the contact 301 on the integrated circuit board 300, so that the integrated circuit board 300 supplies power to the detection circuit 200.
One, two or more functional components such as a battery, an antenna structure, a microphone, a speaker, an earphone interface, a universal serial bus interface, a camera, a distance sensor, an ambient light sensor, a receiver, and a processor may be integrated on the integrated circuit board 300.
In other embodiments, the detection circuit 200 may be disposed in an area where the display screen is easily broken. For example, an electronic device in which multiple display screens have fragmented may be collected; dividing a display screen into a plurality of areas, wherein the size of each area is the same; the regions where more chipping occurs are determined as regions where the display screen is likely to be chipped, and the detection circuit 200 is disposed in these regions.
Referring to fig. 2, fig. 2 is a partial schematic diagram of a detection circuit 200 according to an embodiment of the present disclosure. The detection circuit 200 includes a plurality of thin film transistors 10, a first metal line 20, a plurality of second metal lines 30, and a third metal line 40. Wherein the first metal line 20 is connected to all the thin film transistors 10. Each of the second metal lines 30 is connected to one of the thin film transistors 10. The third metal line 40 is connected to all the second metal lines 30. The ductility of the second metal line 30 is less than the ductility of the first metal line 20 and the third metal line 40.
Since the ductility of the second metal line 30 is less than the ductility of the first metal line 20 and the third metal line 40, when a fine crack occurs in the display screen, the second metal line 30 will break even though neither the first metal line 20 nor the third metal line 40 breaks. And because the first metal wire 20 and the third metal wire 40 are communicated through the second metal wire 30, the fracture of the second metal wire 30 indirectly causes the first metal wire 20 and the third metal wire 40 to be incapable of being communicated, so that the success probability that the detection circuit detects the fragmentation of the display screen can be increased by arranging the second metal wire 30 with smaller ductility, and the accuracy of detecting whether the display screen is fragmented or not is further improved.
In some embodiments, the arrangement direction of the first metal line 20 and the third metal line 40 is the same;
all of the second metal lines 30 are located between the first metal lines 20 and the third metal lines 40.
The display panel 1000 includes data lines and scan lines arranged in a staggered manner, the data lines are arranged horizontally, and the scan lines are arranged vertically. The arrangement direction of the first metal line 20 and the third metal line 40 may be the same as the arrangement direction of the data lines, and both are arranged in a transverse direction. The first metal line 20 and the third metal line 40 may also be arranged in the same direction as the scan lines, and both are arranged longitudinally. In addition, a part of the first metal line 20 and the third metal line 40 may be arranged in the same direction as the data lines, and both of them are arranged in the horizontal direction, and another part of the first metal line 20 and the third metal line 40 may be arranged in the same direction as the scan lines, and both of them are arranged in the vertical direction, which is not limited herein.
Specifically, a plurality of second metal lines 30 are disposed in parallel between the first metal lines 20 and the third metal lines 40, and the length of the second metal lines 30 is smaller than the length of the first metal lines 20 and the length of the third metal lines 40. The smaller length of the second metal line is also due to the characteristics of the material from which the second metal line is made.
The second metal line 30 may include a first step portion and a second step portion. The first step portion includes a first bent structure and a second bent structure. The second step portion comprises a third bending structure and a fourth bending structure. The first bending structure and the third bending structure are arranged in parallel. The second bending structure and the fourth bending structure are arranged in parallel. The third bending structure is connected with the second bending structure.
In some embodiments, the second step portion further comprises a fifth bend structure. The fifth bending structure is arranged in parallel with the first bending structure and the third bending structure.
In some embodiments, the ductility of the first wire 20 is the same as the ductility of the third wire 40.
The ductility of the first metal line 20 and the third metal line 40 can be controlled to be the same by controlling the materials used for the first metal line 20 and the third metal line 40.
Specifically, the material used for the first metal line 20 and the third metal line 40 may be any one of aluminum, titanium, and molybdenum.
In order to ensure that the ductility of the second metal line 30 is less than the ductility of the first metal line 20 and the third metal line 40, the material of the second metal line 30 may be controlled.
Specifically, the second metal line 30 is made of one of amorphous silicon (a-Si), poly-Si, Indium Gallium Zinc Oxide (IGZO), and the like.
However, since the resistivity of materials such as amorphous silicon (a-Si), poly-Si (poly-Si), and indium-gallium-zinc-oxide (IGZO) is relatively high, it is impossible to manufacture a long metal line, and therefore, in the embodiment of the present invention, the length of the second metal line 30 is smaller than the lengths of the first metal line 20 and the third metal line 40.
In the embodiment of the present application, a first via may be disposed between the third metal line 40 and each of the second metal lines 30. The third metal line 40 may be connected to one second metal line 30 through a first via hole, and thus the third metal line 40 is connected to all the second metal lines 30 through all the via holes. Wherein, the number of the first vias is the same as the number of the second metal lines 30.
A second via hole may be disposed between each second metal line 30 and each thin film transistor 10. A second metal line 30 may be connected to a gate of a tft 10 through a second via. Wherein the number of the second vias is the same as the number of the second metal lines 30.
In some embodiments, the first metal line 20 may include a plurality of first sub-metal lines, and each of the first sub-metal lines may be connected to the source of one thin film transistor 10 of two adjacent thin film transistors 10 and the drain of another thin film transistor 10.
The first sub-metal lines and the source and drain electrodes of the thin film transistor 10 may also be connected by punching.
The detection circuit provided by the embodiment of the application is provided with a plurality of thin film transistors 10, a first metal wire 20, a plurality of second metal wires 30 and a third metal wire 40. Wherein the first metal line 20 is connected to all the thin film transistors 10. Each of the second metal lines 30 is connected to one of the thin film transistors 10. The third metal line 40 is connected to all the second metal lines 30. The ductility of the second metal line 30 is less than the ductility of the first metal line 20 and the third metal line 40. Based on this, because the ductility of second metal wire is relatively poor, even the display screen crackle is less, also can make this second metal wire fracture to detect out the display screen is cracked, and when the display screen crackle was great, first metal wire, second metal wire and third metal wire all can be cracked, thereby detect out the display screen is cracked, it is thus obvious that the detection circuitry that this application provided can improve and carry out the precision that detects to the cracked display screen.
Referring to fig. 3, fig. 3 is a schematic flow chart of a detection method according to an embodiment of the present disclosure. The detection method can be applied to the detection circuit described in any embodiment of the present application. The detection method may be built into the test equipment. The detection circuit may include: a plurality of thin film transistors; a first metal line connected to all the thin film transistors; a plurality of second metal lines, each of which is connected to one of the thin film transistors; and a third metal line connected to all of the second metal lines, the second metal lines having a ductility less than the ductility of the first metal lines and the third metal lines.
The detection method can comprise the following steps:
101. and connecting a control signal to the third metal wire to start all the thin film transistors so that the first metal wire, the second metal wire and the third metal wire are communicated.
For example, the control signal may be a control voltage. The test equipment is connected with two ends of the third metal wire so as to connect the control signal to the third metal wire. The control signal may also be coupled to the third metal line by an integrated circuit board.
When the control signal is connected to the third metal wire, all the thin film transistors can be turned on because the third metal wire is connected with all the thin film transistors. And when all the thin film transistors are started, the first metal wire, the second metal wire and the third metal wire are communicated. It can also be said that the entire detection circuit forms one path.
102. And acquiring the resistance values of two ends of the first metal wire or the third metal wire.
The test equipment can also access a test signal to the first metal wire or the third metal wire to obtain the resistance values at two ends of the first metal wire.
In some embodiments, a multimeter may also be connected to both ends of the first metal line or the third metal line to obtain the resistance value of both ends of the first metal line or the third metal line.
In some embodiments, the integrated circuit board may be connected to both ends of the first metal line or the third metal line, so as to obtain the current and the voltage across the first metal line or the third metal line through the integrated circuit board, and calculate the resistance value across the first metal line or the third metal line based on the current and the voltage.
103. And judging whether the first metal wire, the second metal wire and the third metal wire are broken or not according to the resistance value.
In the embodiment of the application, when the display screen is not cracked, the first metal wire, the second metal wire and/or the third metal wire are not broken. When the first metal wire, the second metal wire and/or the third metal wire are/is not broken, the resistance values of the two ends of the first metal wire or the third metal wire are the sum of the resistance value of the first metal wire, the resistance value of the second metal wire, the resistance value of the third metal wire, the resistance value of the thin film transistor and the resistance value of the via hole (when the via hole exists). When the display screen is cracked, the first metal wire, the second metal wire and/or the third metal wire can be broken. When the first metal line, the second metal line and/or the third metal line are broken, the resistance values of the two ends of the first metal line or the third metal line are increased, that is, the resistance values of the two ends of the first metal line are greater than the sum of the resistance value of the first metal line, the resistance value of the second metal line, the resistance value of the third metal line, the resistance value of the thin film transistor and the resistance value of the via hole (when the via hole exists). Therefore, the resistance values of the two ends of the first metal wire or the third metal wire can be obtained, whether the first metal wire, the second metal wire and the third metal wire break or not is judged by comparing the resistance values of the two ends of the first metal wire or the third metal wire with the sum of the resistance value of the first metal wire, the resistance value of the second metal wire, the resistance value of the third metal wire, the resistance value of the thin film transistor and the resistance value of a via hole (when the via hole exists), and whether the display screen breaks or not is judged by judging whether the first metal wire, the second metal wire and the third metal wire break or not.
If the ductility of the metal wire is relatively good, if the metal wire is made of one of aluminum, titanium, molybdenum and the like, when the cracks of the display screen are fine, the ductility of the metal wire is relatively good, so that the metal wire cannot break, and further the display screen cannot be judged to be cracked.
Therefore, in the embodiment of the present application, it is considered that the metal wire is made of one of amorphous silicon (a-Si), poly-Si (poly-Si), Indium Gallium Zinc Oxide (IGZO) and the like having relatively low ductility, so that when the display screen has fine cracks, the metal wire may be broken due to poor ductility, and thus the display screen may be determined to be cracked.
However, the resistivity of materials such as amorphous silicon (a-Si), poly-Si (poly-Si), and indium-gallium-zinc-oxide (IGZO) is relatively high, and a long metal line cannot be manufactured, and therefore, in the embodiment of the present application, the first metal line and the third metal line which are relatively long may be made of one of aluminum, titanium, and molybdenum. And the relatively short second metal line may be made of one of amorphous silicon (a-Si), poly-Si, Indium Gallium Zinc Oxide (IGZO), etc., so that the second metal line having relatively low ductility may be obtained. And because the ductility of the second metal wire is relatively poor, when the display screen crackle is relatively slight, also can make this second metal wire fracture, and then can judge that the display screen is cracked.
In some embodiments, step 103 may comprise:
and when the resistance value is within the first resistance value interval, determining that the second metal wire is broken and the first metal wire and the third metal wire are not broken.
And when the resistance value is within a second resistance value interval, determining that the first metal wire, the second metal wire and the third metal wire are all broken, wherein the first resistance value interval is smaller than the second resistance value interval.
It is understood that the second metal line is broken, and the first metal line and the third metal line are not broken, and the resistance value at both ends of the first metal line or the third metal line is relatively smaller than that when the first metal line, the second metal line and the third metal line are broken.
In this embodiment of the application, a first resistance value corresponding to a broken second metal line may be obtained in advance, second resistance values corresponding to broken second metal lines in the detection circuit may be obtained, and the first resistance value and the second resistance value may be used as two endpoint values of the first resistance interval.
In this embodiment of the application, all resistance values corresponding to all possible situations where the first metal line, the second metal line, and the third metal line are all broken may also be obtained in advance, and the maximum resistance value and the minimum resistance value of all the resistance values are taken as two endpoint values of the second resistance value interval. The number and the fracture positions of the metal wires are not limited under the condition that the first metal wire, the second metal wire and the third metal wire are all fractured, and the first metal wire, the second metal wire and the third metal wire are all fractured. For example, a portion of the first metal line near the top of the display panel may be broken, two second metal lines near the top of the display panel may be broken, and a portion of the third metal line near the top of the display panel may be broken.
In some embodiments, all resistance values corresponding to all possible situations that the first metal line and the second metal line are broken and the third metal line is not broken may be obtained in advance, and a maximum resistance value and a minimum resistance value of all the resistance values may be used as two endpoint values of the third resistance value interval. Then, when the resistance values of the two ends of the first metal line and the third metal line are in the third resistance value interval, it can be determined that both the first metal line and the second metal line are broken, and the third metal line is not broken.
In other embodiments, all resistance values corresponding to all possible situations that the third metal line and the second metal line are both broken and the first metal line is not broken may be obtained in advance, and the maximum resistance value and the minimum resistance value of all the resistance values may be used as the two endpoint values of the fourth resistance value interval. Then, when the resistance values of the two ends of the first metal line and the third metal line are in the fourth resistance value interval, it can be determined that both the third metal line and the second metal line are broken, and the first metal line is not broken.
In other embodiments, all resistance values corresponding to all possible situations that the first metal line and the third metal line are broken and the second metal line is not broken may be obtained in advance, and the maximum resistance value and the minimum resistance value of all the resistance values may be used as the two endpoint values of the fifth resistance value interval. Then, when the resistance values of the two ends of the first metal line and the third metal line are in the fifth resistance value interval, it can be determined that both the first metal line and the third metal line are broken, and the two metal lines are not broken.
In some embodiments, all resistance values corresponding to all possible situations that the first metal line and the second metal line are not broken and the third metal line is broken may be obtained in advance, and a maximum resistance value and a minimum resistance value of all the resistance values may be used as two endpoint values of the sixth resistance value interval. Then, when the resistance values of the two ends of the first metal line and the third metal line are in the sixth resistance value interval, it can be determined that neither the first metal line nor the second metal line is broken, and the third metal line is broken.
In other embodiments, all resistance values corresponding to all possible situations that the third metal line and the second metal line are not broken and the first metal line is broken may be obtained in advance, and a maximum resistance value and a minimum resistance value of all the resistance values may be used as two endpoint values of the seventh resistance value interval. Then, when the resistance values of the two ends of the first metal line and the third metal line are in the seventh resistance value interval, it can be determined that neither the third metal line nor the second metal line is broken, and the first metal line is broken.
It is understood that when the resistance value of the two ends of the first metal line or the third metal line is very different from the sum of the resistance value of the first metal line, the resistance value of the second metal line, the resistance value of the third metal line, the resistance value of the thin film transistor and the resistance value of the via hole (when the via hole exists) in the detection circuit, it can be determined that none of the first metal line, the second metal line and the third metal line is broken.
In some embodiments, the control signal may include a control voltage, and before step 101, the method may include:
acquiring the type of the thin film transistor;
step 101 may include:
when the type of the thin film transistor is the first type, connecting a first control voltage to a third metal wire;
and when the type of the thin film transistor is a second type, connecting a second control voltage to the third metal wire, wherein the first control voltage is less than the second control voltage.
The first control voltage is a low voltage (negative voltage), and the second control voltage is a high voltage (positive voltage).
It is understood that there are two types of thin film transistors, the first type being N-type and the second type being P-type. When the type of the tft is N-type, a low voltage (negative voltage) needs to be applied to turn on the tft. When the type of the thin film transistor is P-type, a high voltage (positive voltage) needs to be applied to turn on the thin film transistor.
Thus, in the embodiment of the present application, when the type of the thin film transistor is N-type, a low voltage (negative voltage) can be connected to the third metal line; when the type of the thin film transistor is a P-type, a high voltage (positive voltage) may be connected to the third metal line.
In some embodiments, the first metal line and the third metal line are arranged in the same direction;
all the second metal lines are located between the first metal lines and the third metal lines.
The display panel comprises data lines and scanning lines which are arranged in a transverse and longitudinal staggered mode, the data lines are arranged transversely, and the scanning lines are arranged longitudinally. The arrangement direction of the first metal line and the third metal line can be the same as the arrangement direction of the data lines and are transversely arranged. The first metal wire and the third metal wire can also be arranged in the same direction as the scanning wire and are longitudinally arranged. In addition, a part of the first metal line and the third metal line may be arranged in the same direction as the data line, and both of them are arranged in the horizontal direction, and the other part of the first metal line and the third metal line may be arranged in the same direction as the scan line, and both of them are arranged in the longitudinal direction, which is not limited herein.
Specifically, the plurality of second metal lines are arranged between the first metal line and the third metal line in parallel, and the length of the second metal line is smaller than the length of the first metal line and the length of the third metal line. The smaller length of the second metal line is also due to the characteristics of the material from which the second metal line is made.
In some embodiments, the first metal line has a ductility that is the same as a ductility of the third metal line.
The ductility of the first metal line and the third metal line can be controlled to be the same by controlling the materials of the first metal line and the third metal line.
Specifically, the material used for the first metal line and the third metal line may be any one of aluminum, titanium, and molybdenum.
In some embodiments, the detection method may include:
connecting a control signal to the third metal wire to start all the thin film transistors so that the first metal wire, the second metal wire and the third metal wire are communicated;
accessing a test signal to the first metal line or the third metal line;
and when the test signal is interrupted, determining that the first metal wire, the second metal wire and/or the third metal wire are broken.
For example, the control signal may be a control voltage. The test equipment is connected with two ends of the third metal wire so as to connect the control signal to the third metal wire. The control signal may also be coupled to the third metal line by an integrated circuit board.
When the control signal is connected to the third metal wire, all the thin film transistors can be turned on because the third metal wire is connected with all the thin film transistors. And when all the thin film transistors are started, the first metal wire, the second metal wire and the third metal wire are communicated. It can also be said that the entire detection circuit forms one path.
For example, the test device may further access a test signal to the first metal line or the third metal line to determine whether the first metal line, the second metal line, and/or the third metal line is broken through whether the test signal is interrupted, and further determine whether the display screen is cracked through whether the first metal line, the second metal line, and/or the third metal line is broken. The test signal may be a test voltage, a test current, a test resistance, a test power, or the like.
When the first metal wire, the second metal wire and the third metal wire are not broken, the whole test circuit is a path, so that the test signal is not interrupted. When the first metal line, the second metal line and/or the third metal line are broken, the test signal is interrupted because some parts of the test circuit cannot form a path.
According to the detection method provided by the embodiment of the application, whether the display screen is cracked or not is judged by acquiring the resistance values of the two ends of the first metal wire or the third metal wire after the whole detection circuit becomes a path, wherein when the resistance values of the two ends of the first metal wire or the third metal wire are relatively large, the display screen is judged to be cracked. Since the ductility of the second metal line in the detection circuit is poor, the second metal line can be broken even if the display screen cracks are fine. And when the display screen crackle was great, no matter be the first metal wire and the third metal wire that ductility is relatively better, still the second metal wire that ductility is relatively poor, all the fracture can take place, can know, no matter the display screen crackle is great or comparatively slight, all can detect to whether cracked precision of carrying out the detection to the display screen has been improved.
In the foregoing embodiments, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to related descriptions of other embodiments.
The foregoing describes in detail a detection circuit, a display panel, and a detection method provided in an embodiment of the present application, and a specific example is applied in the description to explain the principle and the implementation of the present application, and the description of the foregoing embodiment is only used to help understand the technical solution and the core idea of the present application; those of ordinary skill in the art will understand that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications or substitutions do not depart from the spirit and scope of the present disclosure as defined by the appended claims.
Claims (10)
1. A detection circuit applied to a display panel includes:
a plurality of thin film transistors;
the first metal wire is connected with all the thin film transistors;
a plurality of second metal lines, each of the second metal lines being connected to one of the thin film transistors; and
a third metal line connected to all of the second metal lines, the second metal lines having a ductility less than the ductility of the first and third metal lines.
2. The detection circuit according to claim 1, wherein the arrangement directions of the first metal line and the third metal line are the same;
all of the second metal lines are located between the first metal lines and the third metal lines.
3. The detection circuit of claim 1, wherein the ductility of the first metal line is the same as the ductility of the third metal line.
4. The detection circuit according to any one of claims 1 to 3, wherein the second metal line is made of one of a-Si, poly Si, and IGZO.
5. A display panel characterized in that it comprises a detection circuit as claimed in any one of claims 1 to 4.
6. A detection method is applied to a detection circuit, and is characterized in that the detection circuit comprises:
a plurality of thin film transistors;
the first metal wire is connected with all the thin film transistors;
a plurality of second metal lines, each of the second metal lines being connected to one of the thin film transistors; and
a third metal line connected to all of the second metal lines, the second metal lines having a ductility less than the ductility of the first and third metal lines,
the method comprises the following steps:
accessing a control signal to the third metal wire to turn on all the thin film transistors so that the first metal wire, the second metal wire and the third metal wire are communicated;
obtaining resistance values of two ends of the first metal wire or the third metal wire;
and judging whether the first metal wire, the second metal wire and the third metal wire break or not according to the resistance value.
7. The method of claim 6, wherein the determining whether the first metal line, the second metal line, and the third metal line are broken according to the resistance value comprises:
and when the resistance value is within a first resistance value interval, determining that the second metal wire is broken and the first metal wire and the third metal wire are not broken.
8. The detection method according to claim 7, further comprising:
and when the resistance value is within a second resistance value interval, determining that the first metal wire, the second metal wire and the third metal wire are all broken, wherein the first resistance value interval is smaller than the second resistance value interval.
9. The method according to any one of claims 6 to 8, wherein the control signal comprises a control voltage, and before the switching the control signal to the third metal line, the method further comprises:
obtaining the type of the thin film transistor;
the accessing a control signal to the third metal line includes:
when the type of the thin film transistor is a first type, a first control voltage is connected to the third metal wire;
and when the type of the thin film transistor is a second type, a second control voltage is connected to the third metal wire, and the first control voltage is smaller than the second control voltage.
10. The detection method according to any one of claims 6 to 8, wherein the second metal wire is made of one of a-Si, poly Si and IGZO.
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