CN101728397B - Active element array substrate and detection method thereof - Google Patents

Active element array substrate and detection method thereof Download PDF

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CN101728397B
CN101728397B CN2008101711946A CN200810171194A CN101728397B CN 101728397 B CN101728397 B CN 101728397B CN 2008101711946 A CN2008101711946 A CN 2008101711946A CN 200810171194 A CN200810171194 A CN 200810171194A CN 101728397 B CN101728397 B CN 101728397B
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dielectric layer
active component
base board
array base
detecting pad
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CN101728397A (en
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张恒豪
刘全丰
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E Ink Holdings Inc
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E Ink Holdings Inc
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Abstract

The invention relates to an active element array substrate and a detection method thereof. The active element array substrate is provided with a display area and a peripheral circuit area and comprises a plurality of pixel units, a plurality of signal leads, a plurality of detection pads and a first dielectric layer. The pixel units are arranged in the display area in an array mode, the signal wires and the detection pads are arranged in the peripheral circuit area, and the first dielectric layer covers the detection pads. The method for inspecting the active device array substrate comprises removing part of the first dielectric layer to expose the inspection pad to be electrically contacted with the inspection tool. That is, before the detection, the detection pad is electrically insulated from the outside, so that the electrostatic charge can be prevented from causing electrostatic damage to the pixel unit through the signal conductor by the detection pad, and the circuit stability of the active device array substrate is improved.

Description

主动元件阵列基板及其检测方法Active element array substrate and detection method thereof

技术领域 technical field

本发明涉及一种主动元件阵列基板及其检测方法,特别是涉及能够防止静电通过检测垫击伤电路的一种主动元件阵列基板及其检测方法。  The invention relates to an active element array substrate and a detection method thereof, in particular to an active element array substrate capable of preventing static electricity from passing through a detection pad to damage a circuit and a detection method thereof. the

背景技术 Background technique

由于主动式平面显示面板具有体积小、重量轻且反应速度快等优点,因此目前已被广泛地应用于各种电子产品中。主动式平面显示面板是由主动元件阵列基板、显示层以及透光基板所构成,其中显示层是位于主动元件阵列基板与透光基板之间,如液晶显示面板(liquid crystal displaypanel,LCD panel)的液晶层、电泳显示面板(elector-phoretic displaypanel,EPD panel)的电泳层等。  Due to the advantages of small size, light weight and fast response, the active flat display panel has been widely used in various electronic products. The active flat display panel is composed of an active element array substrate, a display layer and a light-transmitting substrate, wherein the display layer is located between the active element array substrate and the light-transmitting substrate, such as a liquid crystal display panel (LCD panel) Liquid crystal layer, electrophoretic layer of electrophoretic display panel (EPD panel), etc. the

请参阅图1所示,是现有习知的主动元件阵列基板的示意图。现有习知的主动元件阵列基板100具有显示区102与周边电路区104,其中显示区102内配置有多个像素(像素又称为画素,本文均称为像素)单元110,而周边电路区104内则配置有多条信号(或称为讯号)导线120,用以将显示区102内的像素单元110电性连接至驱动电路130。  Please refer to FIG. 1 , which is a schematic diagram of a conventional active device array substrate. The conventional active device array substrate 100 has a display area 102 and a peripheral circuit area 104, wherein the display area 102 is configured with a plurality of pixel (pixels are also referred to as pixels, all referred to herein as pixels) units 110, and the peripheral circuit area A plurality of signal (or called signal) wires 120 are arranged in 104 for electrically connecting the pixel units 110 in the display area 102 to the driving circuit 130 . the

以现行的主动式平面显示面板的制造过程来说,在完成主动元件阵列基板100上的所有电路配置之后,通常会接着进行电路检测来确认主动元件阵列基板100上的电路是否有缺陷存在,因此主动元件阵列基板100的周边电路区104内会设置有检测垫140,检测工具(如探针,图未示)即是通过检测垫140而与主动元件阵列基板100上的电路电性连接。  In the current manufacturing process of active flat display panels, after completing all circuit configurations on the active device array substrate 100, circuit testing is usually performed to confirm whether there are defects in the circuits on the active device array substrate 100. Therefore, The peripheral circuit area 104 of the active device array substrate 100 is provided with detection pads 140 , and detection tools (such as probes, not shown) are electrically connected to the circuits on the active device array substrate 100 through the detection pads 140 . the

然而,不论是制造设备、操作人员以及主动元件阵列基板100本身都可能会累积许多静电荷。因此,当主动元件阵列基板100在制造过程中接触到制造设备、操作人员或其他物体时,这些静电荷往往容易经由这些带电体而传至主动元件阵列基板100上,并通过检测垫140经信号导线120传至显示区102内的电路,因而造成显示区102内的电路遭受静电击伤而损坏主动元件阵列基板100。  However, many electrostatic charges may be accumulated by the manufacturing equipment, operators and the active device array substrate 100 itself. Therefore, when the active device array substrate 100 is in contact with manufacturing equipment, operators or other objects during the manufacturing process, these static charges are often easily transmitted to the active device array substrate 100 through these charged objects, and pass through the detection pad 140 through the signal. The wires 120 are transmitted to the circuits in the display area 102 , thus causing the circuits in the display area 102 to be damaged by static electricity and damage the active device array substrate 100 . the

请参阅图2所示,是图1的主动元件阵列基板沿I-I’线的剖面示意图。如图1及图2所示,为了避免主动元件阵列基板100上的静电荷通过检测垫140散逸至显示区102内,习知技术是先在信号导线120上形成介电层125,在信号导线120上方的介电层125上形成检测垫140。换言之,检测垫140与信号导线120之间隔有介电层125,以避免静电荷直接由检测垫140经信号导线120传导至显示区102内的电路。检测垫140上则依序形成有具有开口152的介电层150及导电层160,且导电层160是通过介电层150的开口152而与检测垫140电性连接。当欲进行检测时,可利用激光熔接检测垫140与信号导线120,再将检测工具与导电层160电性接触,即可对主动元件阵列基板100上的电路进行检测。  Please refer to FIG. 2 , which is a schematic cross-sectional view of the active element array substrate of FIG. 1 along line I-I'. As shown in FIG. 1 and FIG. 2, in order to prevent the static charge on the active device array substrate 100 from dissipating into the display area 102 through the detection pad 140, the conventional technology is to first form a dielectric layer 125 on the signal wire 120, and then form a dielectric layer on the signal wire 120. Detection pads 140 are formed on the dielectric layer 125 above 120 . In other words, the dielectric layer 125 is separated between the detection pad 140 and the signal wire 120 to prevent electrostatic charge from being directly conducted from the detection pad 140 to the circuit in the display area 102 through the signal wire 120 . A dielectric layer 150 having an opening 152 and a conductive layer 160 are sequentially formed on the detection pad 140 , and the conductive layer 160 is electrically connected to the detection pad 140 through the opening 152 of the dielectric layer 150 . When testing is desired, the detection pad 140 and the signal wire 120 can be welded by laser, and then the detection tool is electrically contacted with the conductive layer 160 to detect the circuit on the active device array substrate 100 . the

然而,在未利用激光(激光又称为雷射光,本文均称为激光)熔接检测垫140与信号导线120之前,由于检测垫140、介电层125与信号导线120是构成电容C,因此虽然静电荷不会直接从检测垫140传至信号导线120,但是当检测垫140上累积过多的静电荷时,将会在瞬间发生静电击穿的现象,因而对主动元件阵列基板100上的电路造成更大的损伤。  However, before the detection pad 140 and the signal wire 120 are welded by laser (laser is also called laser light, which is referred to herein as laser), since the detection pad 140, the dielectric layer 125 and the signal wire 120 form a capacitance C, although Static charge will not be directly transmitted from the detection pad 140 to the signal wire 120, but when too much static charge is accumulated on the detection pad 140, the phenomenon of electrostatic breakdown will occur instantaneously, thus affecting the circuit on the active element array substrate 100. cause more damage. the

由此可见,上述现有的主动元件阵列基板及其检测方法在产品结构、检测方法与使用上,显然仍存在有不便与缺陷,而亟待加以进一步改进。为了解决上述存在的问题,相关厂商莫不费尽心思来谋求解决之道,但长久以来一直未见适用的设计被发展完成,而一般产品及方法又没有适切的结构及方法能够解决上述问题,此显然是相关业者急欲解决的问题。因此如何能创设一种新的主动元件阵列基板及其检测方法,实属当前重要研发课题之一,亦成为当前业界极需改进的目标。  It can be seen that the above-mentioned existing active device array substrate and its detection method obviously still have inconveniences and defects in terms of product structure, detection method and use, and further improvement is urgently needed. In order to solve the above-mentioned problems, the relevant manufacturers have tried their best to find a solution, but no suitable design has been developed for a long time, and there is no suitable structure and method for general products and methods to solve the above-mentioned problems. This is obviously a problem that relevant industry players are eager to solve. Therefore, how to create a new active device array substrate and its detection method is one of the current important research and development topics, and has also become a goal that the industry needs to improve. the

发明内容Contents of the invention

本发明的目的在于,克服现有的主动元件阵列基板存在的缺陷,而提供一种新的主动元件阵列基板,所要解决的技术问题是使其具有低静电击伤率低与高电路稳定性。  The object of the present invention is to overcome the defects of the existing active element array substrate and provide a new active element array substrate. The technical problem to be solved is to make it have low electrostatic damage rate and high circuit stability. the

本发明的另一目的在于,克服现有的检测方法存在的缺陷,而提供一种新的检测方法,所要解决的技术问题是使其以降低上述主动元件阵列基板的静电击伤率,进而提高其电路稳定性。  Another object of the present invention is to overcome the defects of existing detection methods and provide a new detection method. The technical problem to be solved is to reduce the electrostatic damage rate of the above-mentioned active element array substrate, thereby improving its circuit stability. the

本发明的目的及解决其技术问题是采用以下技术方案来实现的。为达到上述目的,依据本发明的一种主动元件阵列基板,具有一显示区与一周边电路区,且此主动元件阵列基板包括多个像素单元、多条信号导线、多个检测垫以及第一介电层。其中,上述像素单元是以阵列的方式排列于显示区内,上述信号导线与检测垫则是配置于周边电路区内,且第一介电层是覆盖住上述检测垫以在该主动元件阵列基板进行检测之前避免所述检测垫暴露在外界。  The purpose of the present invention and the solution to its technical problems are achieved by adopting the following technical solutions. To achieve the above object, an active element array substrate according to the present invention has a display area and a peripheral circuit area, and the active element array substrate includes a plurality of pixel units, a plurality of signal wires, a plurality of detection pads and a first dielectric layer. Wherein, the above-mentioned pixel units are arranged in the display area in an array, the above-mentioned signal wires and detection pads are arranged in the peripheral circuit area, and the first dielectric layer covers the above-mentioned detection pads to form an active element array substrate. Avoid exposing the test pad to the outside world before performing the test. the

在本发明的较佳实施例中,上述各检测垫均与上述信号导线其中之一电性连接。  In a preferred embodiment of the present invention, each of the detection pads is electrically connected to one of the signal wires. the

本发明的目的及解决其技术问题还采用以下的技术方案来实现。为达到上述目的,依据本发明的一种检测方法,适于检测上述主动元件阵列基 板,此检测方法是先移除部分的第一介电层,以暴露出至少一检测垫,接着再将检测工具与暴露出的检测垫电性接触。  The purpose of the present invention and the solution to its technical problems are also achieved by the following technical solutions. In order to achieve the above object, a detection method according to the present invention is suitable for detecting the above-mentioned active element array substrate. The detection method is to first remove part of the first dielectric layer to expose at least one detection pad, and then The test tool is in electrical contact with the exposed test pad. the

在本发明的较佳实施例中,上述移除部分的第一介电层的方法包括激光移除。  In a preferred embodiment of the present invention, the method for removing part of the first dielectric layer includes laser removal. the

本发明的目的及解决其技术问题另外还采用以下技术方案来实现。为达到上述目的,在本发明的较佳实施例中,上述的主动元件阵列基板还包括第二介电层以及导电层,其中第二介电层是配置于上述检测垫与信号导线之间,而导电层则是配置于检测垫上方的第一介电层上。  The purpose of the present invention and the solution to its technical problems are also achieved by the following technical solutions. To achieve the above object, in a preferred embodiment of the present invention, the above-mentioned active element array substrate further includes a second dielectric layer and a conductive layer, wherein the second dielectric layer is disposed between the detection pad and the signal wire, The conductive layer is disposed on the first dielectric layer above the detection pad. the

本发明的目的及解决其技术问题另外再采用以下技术方案来实现。为达到上述发明目的,依据本发明提出的一种检测方法,适于检测上述主动元件阵列基板,此检测方法是将导电层与上述检测垫至少其中之一熔接在一起,并且将熔接至导电层的检测垫与位于其下方的信号导线熔接在一起。之后,将检测工具与上述导电层电性接触。  The purpose of the present invention and its technical problems are solved by adopting the following technical solutions in addition. In order to achieve the purpose of the above invention, a detection method proposed according to the present invention is suitable for detecting the above-mentioned active element array substrate. The detection method is to weld the conductive layer and at least one of the detection pads together, and weld the The detection pad is fused to the signal wire located underneath it. Afterwards, the detection tool is electrically contacted with the above-mentioned conductive layer. the

在本发明的较佳实施例中,熔接导电层与检测垫的方法包括激光熔接。  In a preferred embodiment of the present invention, the method of welding the conductive layer and the detection pad includes laser welding. the

在本发明的较佳实施例中,熔接检测垫与信号导线的方法包括激光熔接。  In a preferred embodiment of the present invention, the method of welding the detection pad and the signal wire includes laser welding. the

在本发明的较佳实施例中,上述导电层的材料例如是透明导电材料,如铟锡氧化物(Indium Tin Oxide,ITO)、铟锌氧化物(Indium Zinc Oxide,IZO)、氧化锌(Zinc Oxide,ZnO)或铟镓锌氧化物(Indium Gall ium Zinc Oxide,IGZO)。  In a preferred embodiment of the present invention, the material of the above-mentioned conductive layer is, for example, a transparent conductive material, such as indium tin oxide (Indium Tin Oxide, ITO), indium zinc oxide (Indium Zinc Oxide, IZO), zinc oxide (Zinc Oxide, ZnO) or Indium Gallium Zinc Oxide (IGZO). the

在本发明的较佳实施例中,上述主动元件阵列基板更包括多个驱动晶片,配置于上述周边电路区内,且上述驱动晶片是分别通过上述信号导线而电性连接至上述像素单元。  In a preferred embodiment of the present invention, the active element array substrate further includes a plurality of driving chips disposed in the peripheral circuit area, and the driving chips are electrically connected to the pixel units through the signal wires respectively. the

借由上述技术方案,本发明主动元件阵列基板及其检测方法至少具有下列优点及有益效果:在本发明的主动元件阵列基板中,由于检测垫在进行检测过程前是藉由介电层的保护而与外界电性绝缘,因此能够防止主动元件阵列基板上的静电荷由检测垫经信号导线传入像素单元内,以避免像素单元遭受静电击伤。  With the above technical solution, the active element array substrate and its detection method of the present invention have at least the following advantages and beneficial effects: In the active element array substrate of the present invention, since the detection pad is protected by a dielectric layer before the detection process It is electrically insulated from the outside world, so it can prevent the static charge on the active element array substrate from being transmitted into the pixel unit through the signal wire through the detection pad, so as to prevent the pixel unit from being damaged by static electricity. the

综上所述,本发明主动元件阵列基板具有显示区与周边电路区,且此主动元件阵列基板包括多个像素单元、多条信号导线、多个检测垫以及第一介电层。像素单元是以阵列的方式排列于显示区内,信号导线与检测垫则是配置于周边电路区内,且第一介电层是覆盖住检测垫。此主动元件阵列基板的检测方法则是先移除部分的第一介电层,以暴露出欲与检测工具电性接触的检测垫。也就是说,在进行检测之前,检测垫是与外界电性绝缘,因而能够避免静电荷由检测垫经信号导线对像素单元造成静电击伤,以提高主动元件阵列基板的电路稳定性。本发明在技术上有显著的进步,并具 有明显的积极效果,诚为一新颖、进步、实用的新设计。  In summary, the active device array substrate of the present invention has a display area and a peripheral circuit area, and the active device array substrate includes a plurality of pixel units, a plurality of signal wires, a plurality of detection pads and a first dielectric layer. The pixel units are arranged in an array in the display area, the signal wires and the detection pads are arranged in the peripheral circuit area, and the first dielectric layer covers the detection pads. The detection method of the active device array substrate is to firstly remove part of the first dielectric layer to expose the detection pads to be electrically contacted with the detection tool. That is to say, before the detection, the detection pad is electrically insulated from the outside world, so that electrostatic damage to the pixel unit caused by electrostatic charge from the detection pad through the signal wire can be avoided, so as to improve the circuit stability of the active device array substrate. The present invention has remarkable progress technically, and has obvious positive effect, is a novel, progressive, practical new design. the

上述说明仅是本发明技术方案的概述,为了能够更清楚了解本发明的技术手段,而可依照说明书的内容予以实施,并且为了让本发明的上述和其他目的、特征和优点能够更明显易懂,以下特举较佳实施例,并配合附图,详细说明如下。  The above description is only an overview of the technical solution of the present invention. In order to better understand the technical means of the present invention, it can be implemented according to the contents of the description, and in order to make the above and other purposes, features and advantages of the present invention more obvious and understandable , the following preferred embodiments are specifically cited below, and are described in detail as follows in conjunction with the accompanying drawings. the

附图说明Description of drawings

图1是习知技术的主动元件阵列基板的示意图。  FIG. 1 is a schematic diagram of an active device array substrate in the prior art. the

图2是图1的主动元件阵列基板沿I-I’线的剖面示意图。  2 is a schematic cross-sectional view of the active device array substrate of FIG. 1 along the line I-I'. the

图3是本发明的主动元件阵列基板在一实施例中的示意图。  FIG. 3 is a schematic diagram of an embodiment of the active device array substrate of the present invention. the

图4是本发明的主动元件阵列基板在一实施例中在配置有检测垫之处的剖面示意图。  FIG. 4 is a schematic cross-sectional view of the active device array substrate of the present invention where the detection pads are disposed in an embodiment. the

图5A与图5B分别是本发明的主动元件阵列基板在其他实施例中的示意图。  FIG. 5A and FIG. 5B are schematic diagrams of active device array substrates in other embodiments of the present invention, respectively. the

图6A至图6B是图3的主动元件阵列基板在检测过程中的部分剖面示意图。  6A to 6B are partial cross-sectional schematic views of the active device array substrate in FIG. 3 during the testing process. the

图7是本发明的主动元件阵列基板在另一实施例中在配置有检测垫之处的剖面示意图。  7 is a schematic cross-sectional view of the active device array substrate in another embodiment of the present invention where the detection pads are disposed. the

图8A至图8B是本发明的主动元件阵列基板在另一实施例中在检测过程中的部分剖面示意图。  8A to 8B are partial cross-sectional schematic views of the active device array substrate in another embodiment of the present invention during the detection process. the

100、300:主动元件阵列基板     102、302:显示区  100, 300: active element array substrate 102, 302: display area

104、304:周边电路区           110、310:像素单元  104, 304: peripheral circuit area 110, 310: pixel unit

120、320:信号导线             125、150:介电层  120, 320: signal wires 125, 150: dielectric layer

130、350:驱动电路             140、330:检测垫  130, 350: drive circuit 140, 330: detection pad

152:开口                      160、720:导电层  152: Opening 160, 720: Conductive layer

312:扫瞄配线                  314:资料配线  312: Scan wiring 314: Data wiring

316:主动元件                  318:像素电极  316: Active component 318: Pixel electrode

340:第一介电层                600、800:检测工具  340: the first dielectric layer 600, 800: detection tools

710:第二介电层                810、820:激光光  710: second dielectric layer 810, 820: laser light

C:电容  C: capacitance

具体实施方式Detailed ways

为更进一步阐述本发明为达成预定发明目的所采取的技术手段及功效,以下结合附图及较佳实施例,对依据本发明提出的主动元件阵列基板及其检测方法其具体实施方式、结构、检测方法、步骤、特征及其功效,详细说明如后。  In order to further explain the technical means and effects of the present invention to achieve the intended purpose of the invention, the specific implementation, structure, The detection method, steps, features and efficacy are described in detail below. the

请参阅图3及图4,图3是本发明的主动元件阵列基板在一实施例中的 示意图,图4则绘示为本发明的主动元件阵列基板在一实施例中于配置有检测垫之处的剖面示意图。本发明一实施例中的主动元件阵列基板300具有显示区302与周边电路区304,且主动元件阵列基板300包括多个像素单元310、多条信号导线320、多个检测垫330以及第一介电层340。  Please refer to FIG. 3 and FIG. 4. FIG. 3 is a schematic diagram of an active device array substrate of the present invention in an embodiment, and FIG. Schematic diagram of the cross-section. The active device array substrate 300 in an embodiment of the present invention has a display area 302 and a peripheral circuit area 304, and the active device array substrate 300 includes a plurality of pixel units 310, a plurality of signal wires 320, a plurality of detection pads 330 and a first interposer. electrical layer 340 . the

上述的像素单元310是以阵列的方式配置于显示区302内。  The aforementioned pixel units 310 are arranged in the display area 302 in an array. the

上述的每一像素单元310包括扫瞄配线(scan Line)312、资料配线(data line)314、主动元件316以及像素电极(pixel electrode)318。  Each pixel unit 310 mentioned above includes a scan line (scan line) 312 , a data line (data line) 314 , an active element 316 and a pixel electrode (pixel electrode) 318 . the

该扫瞄配线312与资料配线314彼此垂直,而主动元件316与像素电极318则是配置于扫瞄配线312与资料配线314所围成的区域内,并与扫瞄配线312、资料配线314及像素电极318电性连接。在本实施例中,主动元件316可以是薄膜电晶体(thin film transistor,TFT)或其他主动式开关元件。  The scanning wiring 312 and the data wiring 314 are perpendicular to each other, and the active element 316 and the pixel electrode 318 are arranged in the area surrounded by the scanning wiring 312 and the data wiring 314, and are connected to the scanning wiring 312. , the data wiring 314 and the pixel electrode 318 are electrically connected. In this embodiment, the active element 316 may be a thin film transistor (thin film transistor, TFT) or other active switching elements. the

上述的信号导线320是配置于主动元件阵列基板300的周边电路区304内,且显示区302内的这些像素单元310是藉由信号导线320而与周边电路区304内的电路电性连接。以本实施例来说,像素单元310即是藉由信号导线320电性连接至驱动电路350。也就是说来说,驱动电路350所输出的信号是经由信号导线320而传输至像素单元310的扫瞄配线312或资料配线314,以驱动像素单元310。  The above-mentioned signal wires 320 are arranged in the peripheral circuit area 304 of the active device array substrate 300 , and the pixel units 310 in the display area 302 are electrically connected to the circuits in the peripheral circuit area 304 through the signal wires 320 . In this embodiment, the pixel unit 310 is electrically connected to the driving circuit 350 through the signal wire 320 . That is to say, the signal output by the driving circuit 350 is transmitted to the scanning wiring 312 or the data wiring 314 of the pixel unit 310 through the signal wire 320 to drive the pixel unit 310 . the

上述的检测垫330同样是配置于周边电路区304内,且如图4所示,本实施例的检测垫330与信号导线320是位于同一膜层,并彼此电性连接。值得一提的是,本发明并不限定检测垫330的形状轮廓,其可以是如图3所示的椭圆形,也可以是图5A所示的四边形或图5B所示的具有弧形曲线的四边形。  The detection pads 330 mentioned above are also disposed in the peripheral circuit area 304 , and as shown in FIG. 4 , the detection pads 330 and the signal wires 320 of this embodiment are located on the same film layer and are electrically connected to each other. It is worth mentioning that the present invention does not limit the shape profile of the detection pad 330, which can be an ellipse as shown in FIG. 3, or a quadrilateral as shown in FIG. quadrilateral. the

上述的第一介电层340是覆盖于检测垫330上,且第一介电层340并未具有任何暴露出检测垫330的开口。如此一来,存在主动元件阵列基板100上的静电荷即无法经由检测垫330传至显示区302内。也就是说,本实施例的第一介电层340可以作为检测垫330的电性保护层,以避免静电荷经由检测垫330与信号导线320传至显示区302内而使像素单元310遭受静电击伤。在本实施例中,由于检测垫330与信号导线320同层,因此第一介电层340亦同时覆盖住信号导线320。  The above-mentioned first dielectric layer 340 covers the detection pad 330 , and the first dielectric layer 340 does not have any opening exposing the detection pad 330 . In this way, the electrostatic charge existing on the active device array substrate 100 cannot be transmitted to the display area 302 through the detection pad 330 . That is to say, the first dielectric layer 340 of this embodiment can be used as an electrical protection layer for the detection pad 330, so as to prevent the static charge from being transmitted to the display area 302 through the detection pad 330 and the signal wire 320, causing the pixel unit 310 to suffer from static electricity. wounded. In this embodiment, since the detection pad 330 is on the same layer as the signal wire 320 , the first dielectric layer 340 also covers the signal wire 320 at the same time. the

以下将举实施例说明上述主动元件阵列基板的检测方法。请参阅图6A至图6B所示,是图3的主动元件阵列基板在检测过程中的部分剖面示意图。如图6A所示,当欲通过检测垫330对显示区302内的电路进行检测时,则需先移除部分的第一介电层340,以暴露出欲与检测工具电性接触的检测垫330。在本实施例中,其例如是以激光移除的方法来移除部分的第一介电层340。  The following examples will be used to illustrate the detection method of the above-mentioned active device array substrate. Please refer to FIG. 6A to FIG. 6B , which are partial cross-sectional schematic diagrams of the active device array substrate in FIG. 3 during the testing process. As shown in FIG. 6A, when it is desired to test the circuit in the display area 302 through the test pad 330, it is necessary to remove part of the first dielectric layer 340 first to expose the test pad to be electrically contacted with the test tool. 330. In this embodiment, a part of the first dielectric layer 340 is removed by laser removal, for example. the

如图6B所示,接着即是将检测工具600与暴露于第一介电层340外的检测垫330电性接触。熟习此技术者应该知道,检测工具600可以是连接至检测机台(图未示)的探针(probe),用以将检测信号通过检测垫330与信号导线320输入至显示区302内的像素单元310,以对各像素单元310的电性进行检测。除此之外,检测工具600也可以是连接至电性量测表(如三用电表)的探针,用以通过检测垫330来检测信号导线320是否存在短路或断路的异常情况。  As shown in FIG. 6B , the next step is to electrically contact the testing tool 600 with the testing pad 330 exposed from the first dielectric layer 340 . Those skilled in the art should know that the detection tool 600 can be a probe connected to a detection machine (not shown in the figure) to input the detection signal to the pixels in the display area 302 through the detection pad 330 and the signal wire 320 unit 310 to detect the electrical properties of each pixel unit 310 . In addition, the detection tool 600 can also be a probe connected to an electric property measuring meter (such as a three-purpose electric meter) to detect whether there is a short circuit or an open circuit in the signal wire 320 through the detection pad 330 . the

请参阅图7所示,是本发明的主动元件阵列基板在另一实施例中于配置有检测垫之处的剖面示意图。以下仅针对本实施例与前述实施例的相异处加以说明,其余与前述实施例的标号相同的元件,请参照前述实施例的说明,以下不再赘述。  Please refer to FIG. 7 , which is a schematic cross-sectional view of the active device array substrate in another embodiment of the present invention where the detection pads are disposed. The following only describes the differences between the present embodiment and the foregoing embodiments, and for the rest of the elements with the same labels as the foregoing embodiments, please refer to the description of the foregoing embodiments, and will not be repeated below. the

如图7所示,本实施例的主动元件阵列基板除了包括有图3与图4所示的像素单元310、信号导线320、检测垫330及第一介电层340之外,更包括第二介电层710与导电层720。其中,第二介电层710是配置于检测垫330与信号导线320之间,也就是说,本实施例的检测垫330与信号导线320并不同层。而导电层720则是配置于检测垫330上方的第一介电层340上。  As shown in FIG. 7 , the active device array substrate of this embodiment not only includes the pixel unit 310 , the signal wire 320 , the detection pad 330 and the first dielectric layer 340 shown in FIG. Dielectric layer 710 and conductive layer 720 . Wherein, the second dielectric layer 710 is disposed between the detection pad 330 and the signal wire 320 , that is, the detection pad 330 and the signal wire 320 in this embodiment are not in different layers. The conductive layer 720 is disposed on the first dielectric layer 340 above the detection pad 330 . the

请同时参阅图3与图7所示,在未进行检测前,本实施例的检测垫330并未与信号导线320电性连接,因此即使累积于导电层720的静电荷击穿至检测垫330,其亦不会由检测垫330经信号导线320进入至显示区302内的电路,因而能够保护显示区302内的像素单元310免于遭受静电击伤。  Please refer to FIG. 3 and FIG. 7 at the same time. Before testing, the detection pad 330 of this embodiment is not electrically connected to the signal wire 320 , so even if the electrostatic charge accumulated in the conductive layer 720 breaks down to the detection pad 330 , it will not enter the circuit in the display area 302 from the detection pad 330 through the signal wire 320 , thus protecting the pixel unit 310 in the display area 302 from being damaged by static electricity. the

以下将举实施例说明上述主动元件阵列基板的检测方法。请参阅图8A至图8B所示,是本发明的主动元件阵列基板在另一实施例中在检测过程中的部分剖面示意图。如图8A所示,当欲通过检测垫330对显示区302内的电路进行检测时,则需将导电层720与检测垫330熔接在一起,并且将检测垫330与信号导线320熔接在一起。其中,本实施例例如是以激光熔接的方式熔接导电层720与检测垫330以及检测垫330与信号导线320。详细来说,以激光熔接导电层720与检测垫330的方法例如是令激光810从导电层720上方入射。而如欲熔接检测垫330与信号导线320,则需令激光820从信号导线320的下方入射。  The following examples will be used to illustrate the detection method of the above-mentioned active device array substrate. Please refer to FIG. 8A to FIG. 8B , which are partial cross-sectional schematic views of the active device array substrate in another embodiment of the present invention during the detection process. As shown in FIG. 8A , when the circuit in the display area 302 is to be detected through the detection pad 330 , the conductive layer 720 and the detection pad 330 need to be welded together, and the detection pad 330 and the signal wire 320 must be welded together. Wherein, in this embodiment, for example, the conductive layer 720 and the detection pad 330 and the detection pad 330 and the signal wire 320 are welded by means of laser welding. In detail, the method of fusing the conductive layer 720 and the detection pad 330 by laser is, for example, making the laser 810 incident from above the conductive layer 720 . However, if the detection pad 330 and the signal wire 320 are to be welded, the laser 820 needs to be incident from below the signal wire 320 . the

如图8B所示,在完成导电层720与检测垫330以及检测垫330与信号导线320的熔接之后,接着即是将检测工具800与导电层720电性接触,以便于通过检测工具800对主动元件阵列基板700上的电路进行检测。如同前述实施例所述,检测工具800可以是连接至检测机台的探针,也可以是连接至电性量测表的探针,熟习此技术者可以自行依据检测过程所需来选择所欲使用的检测工具800。  As shown in FIG. 8B , after the welding of the conductive layer 720 and the detection pad 330 and the detection pad 330 and the signal wire 320 are completed, then the detection tool 800 is electrically contacted with the conductive layer 720, so that the detection tool 800 can be used for active contact. The circuits on the element array substrate 700 are tested. As described in the foregoing embodiments, the detection tool 800 can be a probe connected to the detection machine, or a probe connected to an electrical measurement meter. Those skilled in this technology can choose the desired one according to the needs of the detection process. The inspection tool 800 used. the

由上述可知,本发明的主动元件阵列基板是将介电层覆盖在检测垫上, 以作为检测垫的电性保护层。在对本发明的主动元件阵列基板进行检测的过程中,若检测垫与信号导线同层,且检测垫上方的介电层上未配置有任何膜层,则仅需将检测垫上方的介电层移除即可暴露出欲与检测工具电性接触的检测垫。另一方面,若检测垫与信号导线不同层,且检测垫上方的介电层上配置有导电层,则可先后将导电层与检测垫及检测垫与信号导线熔接在一起后,再令检测工具与熔接至检测垫的导电层电性接触,即可对主动元件阵列基板上的电路进行检测。  It can be known from the above that the active element array substrate of the present invention covers the detection pad with a dielectric layer as an electrical protection layer for the detection pad. In the process of detecting the active element array substrate of the present invention, if the detection pad and the signal wire are on the same layer, and no film layer is arranged on the dielectric layer above the detection pad, then only the dielectric layer above the detection pad needs to be Removal exposes the test pad intended to be in electrical contact with the test tool. On the other hand, if the detection pad and the signal wire are in different layers, and a conductive layer is arranged on the dielectric layer above the detection pad, the conductive layer and the detection pad and the detection pad and the signal wire can be welded together successively, and then the detection The tool is in electrical contact with the conductive layer welded to the detection pad, so that the circuit on the active element array substrate can be detected. the

综上所述,本发明的主动元件阵列基板在进行检测过程前,其检测垫是藉由介电层的保护而与外界电性绝缘,因而能够防止主动元件阵列基板上的静电荷由检测垫经信号导线传入像素单元内,以避免像素单元遭受静电击伤,并藉此提高主动元件阵列基板的电路稳定性。  To sum up, before the detection process of the active device array substrate of the present invention, the detection pad is electrically insulated from the outside world by the protection of the dielectric layer, thus preventing the static charge on the active device array substrate from being released by the detection pad. The signal wires are passed into the pixel unit to prevent the pixel unit from being damaged by static electricity, thereby improving the circuit stability of the active element array substrate. the

以上所述,仅是本发明的较佳实施例而已,并非对本发明作任何形式上的限制,虽然本发明已以较佳实施例揭露如上,然而并非用以限定本发明,任何熟悉本专业的技术人员,在不脱离本发明技术方案范围内,当可利用上述揭示的方法及技术内容作出些许的更动或修饰为等同变化的等效实施例,但凡是未脱离本发明技术方案的内容,依据本发明的技术实质对以上实施例所作的任何简单修改、等同变化与修饰,均仍属于本发明技术方案的范围内。  The above description is only a preferred embodiment of the present invention, and does not limit the present invention in any form. Although the present invention has been disclosed as above with preferred embodiments, it is not intended to limit the present invention. Anyone familiar with this field Those skilled in the art, without departing from the scope of the technical solution of the present invention, may use the method and technical content disclosed above to make some changes or modifications to equivalent embodiments with equivalent changes, but if they do not depart from the technical solution of the present invention, Any simple modifications, equivalent changes and modifications made to the above embodiments according to the technical essence of the present invention still fall within the scope of the technical solutions of the present invention. the

Claims (11)

1. an active component array base board has a viewing area and a periphery circuit region, it is characterized in that this active component array base board comprises:
A plurality of pixel cells, arrayed is in this viewing area;
Many signal conductor are disposed in this periphery circuit region, and are electrically connected to said pixel cell;
A plurality of detecting pads are disposed in this periphery circuit region; And
One first dielectric layer covers said detecting pad and avoids said detecting pad to be exposed to the external world with before detecting at this active component array base board.
2. active component array base board according to claim 1, it is characterized in that wherein said detecting pad be respectively with one of them electric connection of said signal conductor.
3. active component array base board according to claim 1 is characterized in that it also comprises:
One second dielectric layer is disposed between said detecting pad and the said signal conductor; And
One conductive layer is disposed on this first dielectric layer of said detecting pad top.
4. active component array base board according to claim 3, the material that it is characterized in that wherein said conductive layer is a transparent conductive material.
5. active component array base board according to claim 4, the material that it is characterized in that wherein said conductive layer are indium tin oxide, indium-zinc oxide, zinc oxide or indium gallium zinc oxide.
6. active component array base board according to claim 1 is characterized in that it also comprises a plurality of driving wafers, be disposed in this periphery circuit region, and said driving wafer is to be electrically connected to said pixel cell through said signal conductor respectively.
7. detection method; Be suitable for detecting an active component array base board; This active component array base board has a viewing area and a periphery circuit region; Wherein, this active component array base board comprises a plurality of pixel cells, many signal conductor, a plurality of detecting pad and one first dielectric layer, and said pixel unit array is arranged in this viewing area; Said signal conductor is disposed in this periphery circuit region and is electrically connected to said pixel cell; Said detecting pad is disposed in this periphery circuit region, and this first dielectric layer covers said detecting pad to avoid said detecting pad to be exposed to the external world before detecting at this active component array base board, it is characterized in that this detection method may further comprise the steps:
Remove the part this first dielectric layer, with expose said detecting pad at least one of them; And
One testing tool is electrically contacted with this detecting pad that exposes.
8. detection method according to claim 7 is characterized in that the wherein said method that removes this first dielectric layer of part comprises that laser removes.
9. detection method; Be suitable for detecting an active component array base board; This active component array base board has a viewing area and a periphery circuit region; Wherein, this active component array base board comprises a plurality of pixel cells, many signal conductor, a plurality of detecting pad, one first dielectric layer, one second dielectric layer and a conductive layer, and said pixel unit array is arranged in this viewing area; Said signal conductor is disposed in this periphery circuit region and is electrically connected to said pixel cell; Said detecting pad is disposed in this periphery circuit region, and this first dielectric layer covers said detecting pad and avoids said detecting pad to be exposed to the external world with before detecting at this active component array base board, and this second dielectric layer is disposed between said detecting pad and the said signal conductor; And this conductive layer is disposed on this first dielectric layer of said detecting pad top, it is characterized in that this detection method may further comprise the steps:
This conductive layer of welding and said detecting pad at least one of them;
With this detecting pad that is welded to this conductive layer and this signal conductor welding that is positioned at its below; And
One testing tool is electrically contacted with this conductive layer.
10. detection method according to claim 9, it is characterized in that this conductive layer of wherein said welding and said detecting pad at least one of them method comprise laser welding.
11. detection method according to claim 9 is characterized in that wherein said this detecting pad that will be welded to this conductive layer and the method for this signal conductor welding that is positioned at its below comprise laser welding.
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