CN112397420A - Manufacturing method of micro light-emitting diode easy to transfer - Google Patents
Manufacturing method of micro light-emitting diode easy to transfer Download PDFInfo
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- CN112397420A CN112397420A CN202011106340.4A CN202011106340A CN112397420A CN 112397420 A CN112397420 A CN 112397420A CN 202011106340 A CN202011106340 A CN 202011106340A CN 112397420 A CN112397420 A CN 112397420A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 55
- 239000003292 glue Substances 0.000 claims abstract description 41
- 239000011521 glass Substances 0.000 claims abstract description 28
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 11
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 11
- 239000010980 sapphire Substances 0.000 claims abstract description 11
- 239000000853 adhesive Substances 0.000 claims abstract description 9
- 230000001070 adhesive effect Effects 0.000 claims abstract description 9
- 239000011248 coating agent Substances 0.000 claims abstract description 6
- 238000000576 coating method Methods 0.000 claims abstract description 6
- 238000005530 etching Methods 0.000 claims abstract description 6
- 238000000151 deposition Methods 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 22
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
- 239000006023 eutectic alloy Substances 0.000 claims description 3
- 239000007791 liquid phase Substances 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 230000001052 transient effect Effects 0.000 claims description 3
- 238000006116 polymerization reaction Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
The invention provides a manufacturing method of a micro light-emitting diode easy to transfer, which comprises the following steps: depositing an epitaxial layer on a sapphire substrate, and coating a light resistance layer on the epitaxial layer; coating a sacrificial layer on the photoresist layer; attaching a first glass substrate with a first glue buffer layer to the sacrificial layer; stripping off the sapphire substrate; etching the epitaxial layer to form a micro light-emitting diode array structure; attaching a second glass substrate with a second adhesive buffer layer to the micro light-emitting diode array structure; stripping off the first glue buffer layer; etching the sacrificial layer and the light resistance layer; performing degumming on the second glue buffer layer; bonding the micro light-emitting diode with a substrate bonding region; stripping the reticular sacrificial layer and the photoresist layer. According to the invention, a net structure is formed by the photoresist layer and the sacrificial layer, the Micro LEDs before transfer are connected with each other, and the Micro LEDs are independent from each other and left on the substrate after the Micro LEDs are transferred.
Description
Technical Field
The invention relates to the technical field of LED packaging, in particular to a manufacturing method of a miniature light-emitting diode easy to transfer.
Background
A Light Emitting Diode (LED) is a semiconductor Diode that can convert electrical energy into Light energy, has the characteristics of small size, high brightness and low energy consumption, and is widely used in the fields of displays and illumination. Micro light emitting diodes (Micro LEDs for short) are LEDs with a size of the order of micrometers.
The Micro LED display has the advantages of high efficiency, high brightness, high reliability, energy conservation, small volume, small thickness and the like, and is a new generation display technology. In the manufacturing process of the Micro LED display, the epitaxial layer is required to be manufactured into one LED by a series of processes and then transferred to the driving substrate. Because Micro LEDs are extremely small in size, millions of Micro LEDs need to be picked up from a growth substrate and then placed on a driving substrate to form a Micro LED display. At present, the mainstream transfer technology is to manufacture a transfer head, absorb micro LEDs through electrostatic force, magnetic force or other forces, and release the absorption force to realize the transfer of the micro LEDs, but in the method, each LED is independently transferred, the transfer result of each LED is possibly inconsistent, the transfer rate is greatly reduced due to deviation, height difference, uneven stress and the like, and how to improve the transfer effect is a difficult problem faced at present.
Disclosure of Invention
The invention aims to provide a manufacturing method of a micro light-emitting diode easy to transfer, and aims to solve the problems of low transfer precision and the like of the conventional micro light-emitting diode mass transfer.
The invention provides a manufacturing method of a micro light-emitting diode easy to transfer, which comprises the following steps:
s1: firstly, depositing an epitaxial layer on a sapphire substrate, and then coating a light resistance layer on the epitaxial layer;
s2: coating a sacrificial layer on the photoresist layer on the basis of the step S1;
s3: providing a first glass substrate and a first glue buffer layer positioned on the first glass substrate, and attaching the first glass substrate with the first glue buffer layer to the sacrificial layer formed in the step S2;
s4: peeling off the sapphire substrate on the basis of step S3;
s5: on the basis of the step S4, etching the epitaxial layer to form a micro light-emitting diode array structure;
s6: providing a second glass substrate and a second glue buffer layer positioned on the second glass substrate, and attaching the second glass substrate with the second glue buffer layer to the micro light-emitting diode array structure formed in the step S5;
s7: stripping off the first adhesive buffer layer and the first glass substrate on the basis of the step S6 to expose the sacrificial layer;
s8: on the basis of the step S7, etching the sacrificial layer and the light resistance layer to form a net structure, so that the adjacent micro light-emitting diodes are connected with each other;
s9: on the basis of the step S8, performing dispergation on the second glue buffer layer, so that the second glue buffer layer and the second glass substrate are separated from the micro light emitting diode array structure;
s10: providing a substrate with a bonding area, and bonding the micro light-emitting diode formed in the step S9 with the bonding area of the substrate;
s11: based on step S10, the mesh-like sacrificial layer and the photoresist layer are stripped off, so that the micro light emitting diodes are left on the substrate independently from each other.
Further, the sacrificial layer is made of titanium or tin which is easy to etch.
Further, the first glue buffer layer and the second glue buffer layer are made of ultraviolet light curing glue or thermosensitive glue.
Further, the sapphire substrate is peeled off using a laser in step S4.
Further, the bonding in step S10 may be eutectic alloy bonding, diffusion bonding, or transient liquid phase bonding.
According to the invention, a reticular structure is formed by the light resistance layer and the sacrificial layer, the Micro LEDs before transfer are connected with each other, and the reticular sacrificial layer and the light resistance layer are stripped after the Micro LED array is transferred, so that the Micro LEDs are independently left on the substrate.
Drawings
FIGS. 1 and 2 are schematic diagrams illustrating a step of a method for manufacturing a micro light emitting diode according to the present invention;
FIG. 3 is a schematic diagram of a second step of the method for manufacturing a micro light emitting diode according to the present invention;
FIG. 4 is a schematic view of a third step of the method for manufacturing a micro light-emitting diode according to the present invention;
FIG. 5 is a fourth schematic view of the steps of the method for manufacturing a micro light emitting diode according to the present invention;
FIG. 6 is a fifth schematic view of the steps of the method for manufacturing a micro light emitting diode according to the present invention;
FIG. 7 is a sixth schematic view of a manufacturing method of a micro light emitting diode according to the present invention;
FIG. 8 is a seventh schematic view illustrating a step of a method for manufacturing a micro light emitting diode according to the present invention;
FIG. 9 is a diagram illustrating an eighth step of the method for manufacturing a micro light emitting diode according to the present invention;
FIG. 10 is a schematic diagram of steps nine and ten of the method for manufacturing a micro light-emitting diode according to the present invention;
FIG. 11 is a schematic view showing an eleventh step of the method for manufacturing a micro light emitting diode according to the present invention.
Detailed Description
The present invention is further illustrated by the following figures and specific examples, which are to be understood as illustrative only and not as limiting the scope of the invention, which is to be given the full breadth of the appended claims and any and all equivalent modifications thereof which may occur to those skilled in the art upon reading the present specification.
The invention provides a manufacturing method of a micro light-emitting diode easy to transfer, which comprises the following steps:
s1: as shown in fig. 1 and 2, firstly, an epitaxial layer 2 is deposited on a sapphire substrate 1, and then a photoresist layer 3 is coated on the epitaxial layer 2;
s2: as shown in fig. 3, on the basis of step S1, a sacrificial layer 4 is coated on the photoresist layer 3; the sacrificial layer 4 is made of metal which is easy to etch, such as titanium or tin;
s3: as shown in fig. 4, providing a first glass substrate 5 and a first glue buffer layer 6 on the first glass substrate 5, and attaching the first glass substrate 5 with the first glue buffer layer 6 to the sacrificial layer 4 formed in step S2;
s4: as shown in fig. 5, on the basis of step S3, the sapphire substrate 1 is peeled off;
s5: as shown in fig. 6, on the basis of step S4, the epitaxial layer 2 is etched to form a micro light emitting diode 7 array structure;
s6: as shown in fig. 7, providing a second glass substrate 8 and a second glue buffer layer 9 on the second glass substrate 8, and attaching the second glass substrate 8 with the second glue buffer layer 9 to the array structure of the micro light emitting diodes 7 formed in step S5;
s7: as shown in fig. 8, based on step S6, the first glue buffer layer 6 and the first glass substrate 5 are peeled off to expose the sacrificial layer 4;
s8: as shown in fig. 9, on the basis of step S7, the sacrificial layer 4 and the photoresist layer 3 are etched to form a mesh structure, so that the micro light emitting diodes 7 are connected to each other;
s9: as shown in fig. 10, on the basis of step S8, the second glue buffer layer 9 is debonded, so that the second glue buffer layer 9 and the second glass substrate 8 are detached from the micro light emitting diode 7 array structure;
s10: as shown in fig. 10, providing a substrate 11 with a bonding region 10, and bonding the micro light emitting diode 7 formed in step S9 with the bonding region 10 of the substrate 11;
s11: as shown in fig. 11, based on step S10, the mesh-like sacrificial layer 4 and the photoresist layer 3 are stripped off, so that the micro light emitting diodes 7 are left on the substrate 11 independently of each other.
The first glue buffer layer 6 can be made of ultraviolet light curing glue or thermal sensitive glue, the second glue buffer layer 9 can be made of ultraviolet light curing glue or thermal sensitive glue, and the second glue buffer layer and the first glue buffer layer are made of different materials. If the first adhesive buffer layer 6 is made of ultraviolet light curing adhesive, the first adhesive buffer layer 6 and the first glass substrate 5 are peeled off by using an ultraviolet light irradiation method in step S7; if the first paste buffer layer 6 is made of a heat-sensitive paste, the first paste buffer layer 6 and the first glass substrate 5 are peeled off in step S7 by heating. Similarly, if the second adhesive buffer layer 9 is made of an ultraviolet light curable adhesive, the second adhesive buffer layer 9 is debonded by using an ultraviolet light irradiation method in step S9; if the second glue buffer layer 9 is made of heat-sensitive glue, the second glue buffer layer 9 is debonded by heating in step S9.
In step S4, the sapphire substrate 1 is peeled off by laser.
The bonding in step S10 may be eutectic alloy bonding, diffusion bonding, or transient liquid phase bonding, among others.
According to the invention, a reticular structure is formed by the light resistance layer and the sacrificial layer, the Micro LEDs before transfer are connected with each other, and the reticular sacrificial layer and the light resistance layer are stripped after the Micro LED array is transferred, so that the Micro LEDs are independently left on the substrate.
Claims (5)
1. A manufacturing method of a micro light-emitting diode easy to transfer is characterized in that: the method comprises the following steps:
s1: firstly, depositing an epitaxial layer on a sapphire substrate, and then coating a light resistance layer on the epitaxial layer;
s2: coating a sacrificial layer on the photoresist layer on the basis of the step S1;
s3: providing a first glass substrate and a first glue buffer layer positioned on the first glass substrate, and attaching the first glass substrate with the first glue buffer layer to the sacrificial layer formed in the step S2;
s4: peeling off the sapphire substrate on the basis of step S3;
s5: on the basis of the step S4, etching the epitaxial layer to form a micro light-emitting diode array structure;
s6: providing a second glass substrate and a second glue buffer layer positioned on the second glass substrate, and attaching the second glass substrate with the second glue buffer layer to the micro light-emitting diode array structure formed in the step S5;
s7: stripping off the first adhesive buffer layer and the first glass substrate on the basis of the step S6 to expose the sacrificial layer;
s8: on the basis of the step S7, etching the sacrificial layer and the light resistance layer to form a net structure, so that the adjacent micro light-emitting diodes are connected with each other;
s9: on the basis of the step S8, performing dispergation on the second glue buffer layer, so that the second glue buffer layer and the second glass substrate are separated from the micro light emitting diode array structure;
s10: providing a substrate with a bonding area, and bonding the micro light-emitting diode formed in the step S9 with the bonding area of the substrate;
s11: based on step S10, the mesh-like sacrificial layer and the photoresist layer are stripped off, so that the micro light emitting diodes are left on the substrate independently from each other.
2. The method of claim 1, wherein the method further comprises: the sacrificial layer is made of titanium or tin which is easy to etch.
3. The method of claim 1, wherein the method further comprises: the first glue buffer layer and the second glue buffer layer are made of ultraviolet light polymerization glue or thermal sensitive glue.
4. The method of claim 1, wherein the method further comprises: in step S4, the sapphire substrate is peeled off using a laser.
5. The method of claim 1, wherein the method further comprises: the bonding in step S10 may be eutectic alloy bonding, diffusion bonding, or transient liquid phase bonding.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011106340.4A CN112397420A (en) | 2020-10-16 | 2020-10-16 | Manufacturing method of micro light-emitting diode easy to transfer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011106340.4A CN112397420A (en) | 2020-10-16 | 2020-10-16 | Manufacturing method of micro light-emitting diode easy to transfer |
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| Publication Number | Publication Date |
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| CN112397420A true CN112397420A (en) | 2021-02-23 |
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| CN202011106340.4A Pending CN112397420A (en) | 2020-10-16 | 2020-10-16 | Manufacturing method of micro light-emitting diode easy to transfer |
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| CN109817767A (en) * | 2018-12-21 | 2019-05-28 | 南京中电熊猫平板显示科技有限公司 | A kind of microdevice and preparation method thereof |
| CN109860092A (en) * | 2019-01-02 | 2019-06-07 | 南京中电熊猫平板显示科技有限公司 | A kind of method and display of micro-led flood tide transfer |
| CN110085518A (en) * | 2019-05-06 | 2019-08-02 | 南京邮电大学 | A kind of preparation method for the transferable GaN film and its device that selective electrochemical method is removed |
| CN111490135A (en) * | 2020-04-17 | 2020-08-04 | 南京中电熊猫平板显示科技有限公司 | Manufacturing method of micro device and manufacturing method of display back plate |
| CN111725124A (en) * | 2020-05-27 | 2020-09-29 | 南京中电熊猫液晶显示科技有限公司 | Transfer method of micro light-emitting diode |
-
2020
- 2020-10-16 CN CN202011106340.4A patent/CN112397420A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109817767A (en) * | 2018-12-21 | 2019-05-28 | 南京中电熊猫平板显示科技有限公司 | A kind of microdevice and preparation method thereof |
| CN109860092A (en) * | 2019-01-02 | 2019-06-07 | 南京中电熊猫平板显示科技有限公司 | A kind of method and display of micro-led flood tide transfer |
| CN110085518A (en) * | 2019-05-06 | 2019-08-02 | 南京邮电大学 | A kind of preparation method for the transferable GaN film and its device that selective electrochemical method is removed |
| CN111490135A (en) * | 2020-04-17 | 2020-08-04 | 南京中电熊猫平板显示科技有限公司 | Manufacturing method of micro device and manufacturing method of display back plate |
| CN111725124A (en) * | 2020-05-27 | 2020-09-29 | 南京中电熊猫液晶显示科技有限公司 | Transfer method of micro light-emitting diode |
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