CN110416379A - A kind of micro-led device, display and its manufacturing method - Google Patents
A kind of micro-led device, display and its manufacturing method Download PDFInfo
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- CN110416379A CN110416379A CN201910643177.6A CN201910643177A CN110416379A CN 110416379 A CN110416379 A CN 110416379A CN 201910643177 A CN201910643177 A CN 201910643177A CN 110416379 A CN110416379 A CN 110416379A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 239000010410 layer Substances 0.000 claims abstract description 135
- 229910052751 metal Inorganic materials 0.000 claims abstract description 79
- 239000002184 metal Substances 0.000 claims abstract description 79
- 239000011241 protective layer Substances 0.000 claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 239000000853 adhesive Substances 0.000 claims abstract description 32
- 230000001070 adhesive effect Effects 0.000 claims abstract description 32
- 230000001052 transient effect Effects 0.000 claims abstract description 14
- 238000005530 etching Methods 0.000 claims abstract description 10
- 238000009792 diffusion process Methods 0.000 claims description 4
- 230000005496 eutectics Effects 0.000 claims description 4
- 238000010521 absorption reaction Methods 0.000 claims description 3
- 238000004026 adhesive bonding Methods 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- 239000002362 mulch Substances 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 3
- 239000011253 protective coating Substances 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 206010040844 Skin exfoliation Diseases 0.000 claims description 2
- 230000035618 desquamation Effects 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 abstract description 5
- 239000012530 fluid Substances 0.000 abstract description 4
- 239000003292 glue Substances 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 6
- 229910052718 tin Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
- H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
-
- H01L33/44—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
-
- H01L2933/0025—
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The present invention provides a kind of micro-led device, display and its manufacturing method, and micro-led device includes transient state substrate, the adhesion layer of the covering transient state substrate, the protective layer positioned at the adhesion layer, multiple metal electrode layers on the protective layer and micro-led on each metal electrode layer.By adding a protective layer on adhesion layer, protective layer can protect adhesion layer to be corroded during micro-led etching, removing, cleaning etc. by medical fluid the present invention, prevent adhesion layer from occurring heaving, lose and stick；Further, since the adhesive force between protective layer and metal electrode layer is less than the micro-led adhesive force between metal electrode layer, the requirement to adhesion layer is reduced, a variety of glue material matter can be used in adhesion layer, eliminate conventionally manufactured middle adhesion layer solution and stick step.
Description
Technical field
The present invention relates to micro-led technical field, in particular to a kind of micro-led device, display
Device and its manufacturing method.
Background technique
Micro-led (Micro LED) is display technology of new generation, hair higher than existing OLED technology brightness
Light efficiency is more preferable, power consumption is lower.The displaying principle of micro-led display, be by LED structure design carry out filming,
Microminiaturization, array, size is only in 1~20 μm of grade or so；Micro LED batch type is transferred in array substrate afterwards；
It recycles deposition manufacture process to complete protective layer and top electrode, can be packaged, it is simple micro-led aobvious to complete structure
Show device.
Fig. 1 is existing micro-led device architecture schematic diagram, and micro-led device includes transient state substrate
1, the adhesion layer 2 of transient state substrate 1, the metal electrode layer 3 on adhesion layer 2 and micro- on metal electrode layer 3 are covered
Type light emitting diode 4.It, can be right when etching forms micro-led 4 in the manufacturing process of micro-led device
Adhesion layer 2 has an impact, and causes adhesion layer 2 to generate and loses phenomena such as sticking, heaving, so as to cause it is subsequent can not be by miniature light-emitting diodes
Pipe 4 is transferred to array substrate.
Summary of the invention
The object of the present invention is to provide a kind of micro-led device and its manufacturing methods, can prevent adhesion layer from occurring
Heave, lose it is glutinous.
The present invention provides a kind of micro-led device, including transient state substrate, covers sticking together for the transient state substrate
Layer, the protective layer of the covering adhesion layer, multiple metal electrode layers on the protective layer and it is located at each gold
Belong to micro-led on electrode layer.
Further, adhesive force is less than micro-led and metal electrode layer between the protective layer and metal electrode layer
Between adhesive force.
Further, between the protective layer and metal electrode layer adhesive force be less than adhere between the adhesion layer and protective layer
Power.
Further, the protective layer is coat of metal or on-metallic protective coating.
The present invention provides a kind of manufacturing method of micro-led device, includes the following steps:
S1: epitaxial layer is covered on substrate, covers metal electrode layer on said epitaxial layer there；
S2: the protective mulch on the metal electrode layer；
S3: covering adhesion layer on the protective layer, and transient state substrate is arranged on adhesion layer；
S4: laser or chemical stripping are used, by the substrate desquamation on the outside of step S1 epitaxial layers；
S5: gluing, exposure, etching and removing are carried out to the epitaxial layer, formed micro-led.
Further, adhesive force is less than micro-led and metal electrode layer between the protective layer and metal electrode layer
Between adhesive force.
Further, between the protective layer and metal electrode layer adhesive force be less than adhere between the adhesion layer and protective layer
Power.
The present invention provides a kind of display, including micro-led device, is located at the micro-led device
The array electrode of part bottom and the array substrate of the carrying array electrode；The micro-led device includes miniature
Light emitting diode and metal electrode layer positioned at micro-led bottom, the array electrode are located at the metal electrode layer
Lower section.
The present invention provides a kind of manufacturing method of display with micro-led device, includes the following steps:
S1: being aligned using array suction nozzle and micro-led device,；
S2: array suction nozzle draws micro-led and metal electrode layer；
S3: the micro-led and metal electrode layer of absorption is transferred in array substrate by array suction nozzle, metal electricity
Pole layer is fixed with array substrate by metal eutectic diffusion bond.
Further, between the metal electrode layer and protective layer adhesive force be less than array suction nozzle and it is micro-led it
Between suction.
The present invention can protect adhesion layer and will not shine miniature by adding a protective layer, protective layer on adhesion layer
It is corroded during diode etching, removing, cleaning etc. by medical fluid, prevents adhesion layer from occurring heaving, loses and stick；Further, since protection
Adhesive force between layer and metal electrode layer is less than the micro-led adhesive force between metal electrode layer, reduces to glutinous
The requirement of layer, adhesion layer a variety of glue material matter can be used, eliminate conventionally manufactured middle adhesion layer solution stick step.
Detailed description of the invention
Fig. 1 is existing micro-led device architecture schematic diagram；
Fig. 2 is the micro-led device making method step 1 of the present invention；
Fig. 3 is the micro-led device making method step 2 of the present invention；
Fig. 4 is the micro-led device making method step 3 of the present invention；
Fig. 5 is the micro-led device making method step 4 of the present invention；
Fig. 6 is the micro-led device architecture schematic diagram of the present invention；
Fig. 7 is inventive display manufacturing method step 1；
Fig. 8 is inventive display manufacturing method step 2.
Specific embodiment
In the following with reference to the drawings and specific embodiments, the present invention is furture elucidated, it should be understood that these embodiments are merely to illustrate
It the present invention rather than limits the scope of the invention, after the present invention has been read, those skilled in the art are to of the invention each
The modification of kind equivalent form falls within the application range as defined in the appended claims.
The present invention provides a kind of micro-led device, as shown in fig. 6, including transient state substrate 1, the covering transient state
The adhesion layer 2 of substrate 1, the protective layer 5 of the covering adhesion layer 2, multiple metal electrode layers 3 on the protective layer 5 with
And micro-led 4 on each metal electrode layer 3.
Wherein, metal electrode layer 3 is made of one layer of metal or multiple layer metal or transition metal layer, such as uses Ni, Sn two
Layer metal, Ni are the adhesive force for increasing Sn, and Sn is to pass through metal eutectic diffusion junctions with the array electrode 10 in array substrate 9 below
Close fixed metal.
Protective layer 5 is coat of metal or on-metallic protective coating, and protective layer 5 can protect adhesion layer 2 will not be in miniature hair
It protects adhesion layer 2 not corroded by medical fluid during the etching of optical diode 4, removing, cleaning etc., prevents adhesion layer 2 from occurring heaving, lose
It is glutinous.Adhesive force is less than adhesive force between micro-led 4 and metal electrode layer 3 between protective layer 5 and metal electrode layer 3,
Adhesive force is less than adhesive force between adhesion layer 2 and protective layer 5 between protective layer 5 and metal electrode layer 3, so that subsequent miniature luminous
Diode 4 and metal electrode layer 3 can be detached from protective layer 5 and be transferred to array substrate 9.
As shown in figure 8, the present invention also provides a kind of displays comprising micro-led device, be located at it is described micro-
The array electrode 10 of type LED device bottom and the array substrate 9 of the carrying array electrode 10.The miniature hair
Optical diode device includes micro-led 4 and the metal electrode layer 3 positioned at micro-led 4 bottom, the battle array
Column electrode 10 is located at the lower section of the metal electrode layer 3.The present invention provides a kind of manufacturing method of micro-led device,
Include the following steps:
S1: as shown in Fig. 2, covering epitaxial layer 7 on substrate 6, metal electrode layer 3 is covered on the epitaxial layer 7；Its
In, metal electrode layer 3 is made of one layer of metal or multiple layer metal or transition metal layer, such as uses Ni, Sn double layer of metal；
S2: as shown in figure 3, the protective mulch 5 on the metal electrode layer 3；Wherein, the need of protective layer 5 and metal electrode
Adhesive force between layer 3 is poor, such as uses metal Ti；
S3: as shown in figure 4, covering adhesion layer 2 on the protective layer 5, transient state substrate 1 is set on adhesion layer 2；Protection
Layer 5 is closely binded with adhesion layer 2, and adhesion layer 2 can be the materials such as glue；
S4: as shown in figure 5, using laser or chemical stripping, the substrate 6 in 7 outside of step S1 epitaxial layers is removed；
S5: as shown in fig. 6, carrying out gluing, exposure, etching and removing to the epitaxial layer 7, the etching of epitaxial layer 7 forms micro-
Type light emitting diode 4；Micro-led 4 size is 1~100 micron.
Protective layer 5 can protect adhesion layer 2 will not be during micro-led 4 etching, removing, cleaning etc. by medicine
Liquid corrodes, to make adhesion layer 2 is intact smooth to stick together micro-led 4 on transient state substrate 1.
Adhesive force is less than attached between micro-led 4 and metal electrode layer 3 between protective layer 5 and metal electrode layer 3
To put forth effort, adhesive force is less than adhesive force between the adhesion layer 2 and protective layer 5 between protective layer 5 and metal electrode layer 3, so that after
Continue micro-led 4 and metal electrode layer 3 can be detached from protective layer 5 and be transferred to array substrate 9.
The present invention provides a kind of manufacturing method of display, includes the following steps:
S1: as shown in fig. 7, aligned using array suction nozzle 8 and micro-led 4,；
S2: as shown in fig. 7, array suction nozzle 8 draws micro-led 4 and metal electrode layer 3；Due to metal electrode
Adhesive force is less than suction between array suction nozzle 8 and micro-led 4, metal electrode layer 3 and guarantor between layer 3 and protective layer 5
Sheath 5 separates；
S3: as shown in figure 8, micro-led the 4 of absorption and metal electrode layer 3 are transferred to array by array suction nozzle 8
On substrate 9, metal electrode layer 3 is fixed with the array electrode 10 in array substrate 9 by metal eutectic diffusion bond；Wherein array
Copper metal can be used in electrode 10.
For the present invention by adding a protective layer 5 on adhesion layer 2, protective layer 5 can protect adhesion layer 2 will not be miniature
It is corroded during the etching of light emitting diode 4, removing, cleaning etc. by medical fluid, prevents adhesion layer 2 from occurring heaving, loses and stick；In addition, by
Adhesive force between protective layer 5 and metal electrode layer 3 is less than adhesive force between micro-led 4 and metal electrode layer 3,
The requirement to adhesion layer 2 is reduced, a variety of glue material matter can be used in adhesion layer 2, eliminate the conventionally manufactured glutinous step of the solution of middle adhesion layer 2
Suddenly.
Claims (10)
1. a kind of micro-led device, it is characterised in that: including transient state substrate, cover sticking together for the transient state substrate
Layer, the protective layer of the covering adhesion layer, multiple metal electrode layers on the protective layer and it is located at each metal electricity
It is micro-led on the layer of pole.
2. micro-led device according to claim 1, it is characterised in that: the protective layer and metal electrode layer
Between adhesive force be less than the micro-led adhesive force between metal electrode layer.
3. micro-led device according to claim 2, it is characterised in that: the protective layer and metal electrode layer
Between adhesive force be less than adhesive force between the adhesion layer and protective layer.
4. micro-led device according to claim 1, it is characterised in that: the protective layer is coat of metal
Or on-metallic protective coating.
5. a kind of manufacturing method of any micro-led device of claim 1-4, it is characterised in that: including such as
Lower step:
S1: epitaxial layer is covered on substrate, covers metal electrode layer on said epitaxial layer there；
S2: the protective mulch on the metal electrode layer；
S3: covering adhesion layer on the protective layer, and transient state substrate is arranged on adhesion layer；
S4: laser or chemical stripping are used, by the substrate desquamation on the outside of step S1 epitaxial layers；
S5: gluing, exposure, etching and removing are carried out to the epitaxial layer, formed micro-led.
6. the manufacturing method of micro-led device according to claim 5, it is characterised in that: the protective layer with
Adhesive force is less than the micro-led adhesive force between metal electrode layer between metal electrode layer.
7. the manufacturing method of micro-led device according to claim 5, it is characterised in that: the protective layer with
Adhesive force is less than adhesive force between the adhesion layer and protective layer between metal electrode layer.
8. a kind of display, which is characterized in that including any micro-led device of claim 1-5, be located at
The array electrode of the micro-led bottom device and the array substrate of the carrying array electrode；The miniature hair
Optical diode device includes metal electrode layer micro-led and positioned at micro-led bottom, the array electricity
Pole is located at the lower section of the metal electrode layer.
9. a kind of manufacturing method of display, characterized by the following steps:
S1: being aligned using array suction nozzle and micro-led device,；
S2: array suction nozzle draws micro-led and metal electrode layer；
S3: the micro-led and metal electrode layer of absorption is transferred in array substrate by array suction nozzle, metal electrode layer
It is fixed with array substrate by metal eutectic diffusion bond.
10. the manufacturing method of display according to claim 9, it is characterised in that: the metal electrode layer and protective layer
Between adhesive force be less than array suction nozzle and it is micro-led between suction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910643177.6A CN110416379A (en) | 2019-07-17 | 2019-07-17 | A kind of micro-led device, display and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910643177.6A CN110416379A (en) | 2019-07-17 | 2019-07-17 | A kind of micro-led device, display and its manufacturing method |
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| Publication Number | Publication Date |
|---|---|
| CN110416379A true CN110416379A (en) | 2019-11-05 |
Family
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|---|---|---|---|
| CN201910643177.6A Pending CN110416379A (en) | 2019-07-17 | 2019-07-17 | A kind of micro-led device, display and its manufacturing method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110993509A (en) * | 2019-11-27 | 2020-04-10 | 南京中电熊猫平板显示科技有限公司 | Manufacturing method of micro light-emitting diode display back plate |
| CN111863692A (en) * | 2020-06-29 | 2020-10-30 | 南京中电熊猫液晶显示科技有限公司 | Transfer method of micro light-emitting diode display back plate |
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| CN107749436A (en) * | 2017-09-27 | 2018-03-02 | 佛山市艾佛光通科技有限公司 | Process for transferring epitaxial layer based on the two-sided eutectic bonding of golden tin |
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| CN108389954A (en) * | 2018-01-11 | 2018-08-10 | 河源市众拓光电科技有限公司 | A kind of superstructure LED chip and preparation method thereof |
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2019
- 2019-07-17 CN CN201910643177.6A patent/CN110416379A/en active Pending
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| US20040232439A1 (en) * | 2001-07-05 | 2004-11-25 | Gelcore Llc. | GaN LED with solderable backside metal |
| TW201349580A (en) * | 2012-05-25 | 2013-12-01 | Phostek Inc | Method for forming semiconductor light-emitting device |
| CN104362224A (en) * | 2014-09-22 | 2015-02-18 | 南昌大学 | Method for manufacturing substrate of LED thin film chip and structure of substrate |
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| CN110993509A (en) * | 2019-11-27 | 2020-04-10 | 南京中电熊猫平板显示科技有限公司 | Manufacturing method of micro light-emitting diode display back plate |
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Effective date of registration: 20200827 Address after: No.7 Tianyou Road, Qixia District, Nanjing City, Jiangsu Province Applicant after: NANJING CEC PANDA LCD TECHNOLOGY Co.,Ltd. Address before: Nanjing Crystal Valley Road in Qixia District of Nanjing City Tianyou 210033 Jiangsu province No. 7 Applicant before: NANJING CEC PANDA FPD TECHNOLOGY Co.,Ltd. Applicant before: NANJING CEC PANDA LCD TECHNOLOGY Co.,Ltd. Applicant before: Nanjing East China Electronic Information Technology Co.,Ltd. |
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