CN110993509A - Manufacturing method of micro light-emitting diode display back plate - Google Patents
Manufacturing method of micro light-emitting diode display back plate Download PDFInfo
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- CN110993509A CN110993509A CN201911178192.4A CN201911178192A CN110993509A CN 110993509 A CN110993509 A CN 110993509A CN 201911178192 A CN201911178192 A CN 201911178192A CN 110993509 A CN110993509 A CN 110993509A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
Abstract
The invention provides a manufacturing method of a micro light-emitting diode display back plate, which relates to the field of micro light-emitting diodes and comprises the following steps: s1: forming inverted trapezoidal metal layers in array arrangement on the epitaxial layer of the transient substrate; s2: forming a micro light-emitting diode below the inverted trapezoidal metal layer; s3: the transfer head transfers the micro light-emitting diode with the inverted trapezoidal metal layer on the top to a second electrode of the display back plate; s4: and forming a first opening on the top of the micro light-emitting diode and a second opening on the top of the first electrode on the display back plate, covering the metal oxide layer on the first opening and the second opening, and conducting the micro light-emitting diode with the first electrode. According to the invention, the inverted trapezoidal metal layer positioned above the micro light-emitting diode is prepared in advance, so that the opening can be formed at the top of the micro light-emitting diode while the side wall protective layer of the micro light-emitting diode is prepared.
Description
Technical Field
The invention belongs to the field of miniature light-emitting diodes, and particularly relates to a manufacturing method of a miniature light-emitting diode display back plate.
Technical Field
With the vigorous development of the display industry, Micro light emitting diodes (Micro LEDs) have been introduced as a new generation of display technology on the stage of the era, and compared with the existing technologies such as OLEDs and LCDs, the Micro LEDs have the characteristics of higher brightness, lower power consumption, better light emitting efficiency, longer service life and the like, but the existing Micro LED technology still has many problems to be solved, and both the process technology, the inspection standard and the production and manufacturing cost have great distance from mass production and commercial application, and the design and manufacturing of the Micro LED display back panel are one of the challenges, including transferring the Micro LEDs to the display back panel, then enabling the Micro LEDs to be tightly combined with the display back panel through various process flows, and then needing packaging and other process flows, thereby realizing the normal display of the Micro LED display back panel.
In the process of transferring the Micro LEDs by using the transfer suction head and placing the Micro LEDs on the display back plate or the target circuit, due to the fact that certain alignment precision errors exist in grabbing and placing the Micro LEDs, the relative positions of the placed Micro LEDs in a bonding area of the display back plate cannot be guaranteed to be completely consistent, and therefore the process of opening holes in the top of the Micro LEDs after packaging all subsequent plated insulating films cannot be achieved.
The prior art is to spin a photoresist to realize packaging protection of the side wall of a Micro LED after the Micro LED is transferred to a display back plate, but the photoresist has the defects of more pores, not compact enough membrane structure and the like, and the Micro LED is plated with an ITO membrane layer to cause the risk of leakage current, which can affect the luminous efficiency of the Micro LED, and the thickness of the spin-coated photoresist needs to be adjusted according to the heights of different types of Micro LEDs, so that the uniformity of the film forming thickness is poor.
Disclosure of Invention
The invention provides a manufacturing method of a micro light-emitting diode display back plate, which is characterized in that an inverted trapezoidal metal layer positioned above a micro light-emitting diode is prepared in advance, so that a hole can be formed on the top of the micro light-emitting diode while a side wall protective layer of the micro light-emitting diode is prepared, and the problem that the hole is difficult to form on the top after the micro light-emitting diode is transferred to the display back plate is solved. In addition, the invention uses the insulating layer to replace the light resistance, thus solving the problems of easy electric leakage and poor uniformity of the micro light-emitting diode under the protection of the light resistance.
The technical scheme of the invention is as follows:
the invention discloses a manufacturing method of a miniature light-emitting diode display back plate, which comprises the following steps:
s1: forming inverted trapezoidal metal layers in array arrangement on the epitaxial layer of the transient substrate;
s2: forming a micro light-emitting diode below the inverted trapezoidal metal layer;
s3: the transfer head transfers the micro light-emitting diode with the inverted trapezoidal metal layer on the top to a second electrode of the display back plate;
s4: and forming a first opening on the top of the micro light-emitting diode and a second opening on the top of the first electrode on the display back plate, covering the metal oxide layer on the first opening and the second opening, and conducting the micro light-emitting diode with the first electrode.
Preferably, step S1 specifically includes the following steps:
s11: sequentially forming a first metal layer and a second metal layer positioned above the first metal layer on an epitaxial layer of the transient substrate, wherein the etching rate of the first metal layer is greater than that of the second metal layer;
s12: performing gluing, exposure and development on the basis of the step S11 to form a first photoresist arranged in an array;
s13: etching the first metal layer and the second metal layer by adopting an etching process to form an inverted trapezoidal metal layer positioned below the first light resistor;
s14: the first photoresist is stripped.
Preferably, step S1 specifically includes the following steps:
s11: forming positive photoresist which is arranged in an array mode and has the bottommost surface forming an obtuse angle with a horizontal plane on the epitaxial layer of the transient substrate through gluing, exposing and developing;
s12: forming a negative photoresist with the bottommost surface forming an acute angle with the horizontal plane above the positive photoresist through gluing, exposing and developing;
s13: and forming a metal layer covering the epitaxial layer and the negative photoresist, removing the positive photoresist, the negative photoresist and the metal layer positioned above the negative photoresist by adopting a stripping process, and forming an inverted trapezoidal metal layer on the metal layer positioned on the epitaxial layer.
Preferably, step S2 specifically includes the following steps:
s21: performing glue coating, exposure and development on the basis of the step S1 to form a second photoresist surrounding the inverted trapezoidal metal layer;
s22: forming a micro light-emitting diode positioned below the second light resistor by adopting an etching process;
s23: the second photoresist is stripped.
Preferably, the size of the obtuse angle formed by the positive photoresist is controlled by the exposure amount.
Preferably, the top width of the negative photoresist is greater than the top width of the positive photoresist and less than the bottom width of the positive photoresist.
Preferably, the top width of the formed micro light emitting diode is greater than that of the inverted trapezoid metal layer.
Preferably, step S4 specifically includes the following steps:
s41: forming an insulating layer covering the display back panel on the basis of the step S3;
s42: removing the inverted trapezoidal metal layer on the top of the miniature light-emitting diode by adopting an etching process to form a first opening on the top of the miniature light-emitting diode;
s43: gluing, exposing and developing to form a second opening on the top of the first electrode;
s44: and forming a metal oxide layer covering the first opening and the second opening, and conducting the micro light-emitting diode and the first electrode.
Preferably, the thickness of the insulating layer does not exceed the thickness of the inverted trapezoidal metal layer.
The invention can bring the following beneficial effects:
according to the invention, the inverted trapezoidal metal layer positioned above the micro light-emitting diode is prepared in advance, so that the opening can be formed at the top of the micro light-emitting diode while the side wall protective layer of the micro light-emitting diode is prepared, the problem that the opening is difficult to form at the top after the micro light-emitting diode is transferred to the display back plate is solved, and the problems of easy electric leakage and poor uniformity of the micro light-emitting diode under the protection of other protective materials are also solved.
Drawings
The present invention will be further described in the following detailed description of preferred embodiments, which is to be read in connection with the accompanying drawings.
FIG. 1 is a schematic view of a first step S1 of the method for manufacturing a micro light-emitting diode display backplane according to the present invention;
FIG. 2 is a schematic view of a second embodiment of step S1 of the method for manufacturing a micro light-emitting diode display backplane according to the present invention;
FIG. 3 is a schematic diagram of step S2 of the method for manufacturing a micro light-emitting diode display backplane according to the present invention;
FIG. 4 is a schematic diagram of step S3 of the method for manufacturing a micro light-emitting diode display backplane according to the present invention;
FIG. 5 is a schematic diagram of step S4 of the method for manufacturing a micro light-emitting diode display backplane according to the present invention.
Detailed Description
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following description will be made with reference to the accompanying drawings. It is obvious that the drawings in the following description are only some examples of the invention, and that for a person skilled in the art, other drawings and embodiments can be derived from them without inventive effort.
For the sake of simplicity, the drawings only schematically show the parts relevant to the present invention, and they do not represent the actual structure as a product. In addition, in order to make the drawings concise and understandable, components having the same structure or function in some of the drawings are only schematically illustrated or only labeled. In this document, "one" means not only "only one" but also a case of "more than one".
The technical solution of the present invention is described in detail with specific examples below.
The invention provides a manufacturing method of a micro light-emitting diode display back plate, which comprises the following steps as shown in figures 1 to 5:
s1: forming an inverted trapezoidal metal layer 30 on the epitaxial layer 200 of the transient substrate 100;
s2: forming a micro light emitting diode 20 below the inverted trapezoid metal layer 30;
s3: the transfer head 50 transfers the micro led 20 with the inverted trapezoid metal layer 30 on the top to the second electrode 44 of the display backplane 40;
s4: a first opening 21 located on the top of the micro light emitting diode 20 and a second opening 411 located on the top of the first electrode 41 on the display backplane 40 are formed, the metal oxide layer 43 is covered on the first opening 21 and the second opening 411, and the micro light emitting diode 20 is conducted with the first electrode 41.
Specifically, the present invention proposes two embodiments for the formation of the inverted trapezoidal metal layer 30 above the epitaxial layer 200 in step S1.
The first embodiment is as follows: as shown in fig. 1, step S1 specifically includes the following steps:
s11: sequentially forming a first metal layer 301 and a second metal layer 302 positioned above the first metal layer 301 on the epitaxial layer 200 of the transient substrate 100, wherein the etching rate of the first metal layer 301 is greater than that of the second metal layer 302;
s12: performing gluing, exposure and development on the basis of the step S11 to form a first photoresist 01 arranged in an array;
s13: etching the first metal layer 301 and the second metal layer 302 by using an etching process to form an inverted trapezoidal metal layer 30 positioned below the first photoresist 01;
s14: the first photoresist 01 is stripped.
As shown in fig. 1, a buffer layer 101 may also be disposed between the temporary substrate 100 and the epitaxial layer 200.
In the above steps, only two metal layers are formed, but in the actual process, the number of layers of the metal layers can be correspondingly adjusted according to the characteristics of the metal layers, and the metal layers can be two metal layers or three or more metal layers. The chamfering angle of the inverted trapezoid metal layer 30 can be controlled by controlling the etching time and the film thickness of the upper and lower layers of metal, and the metal layer of the invention can be Ti/Cu or other metals.
Example two: as shown in fig. 2, step S1 specifically includes the following steps:
s11: forming positive photoresists 02 which are arranged in an array mode and have the bottommost surfaces forming an obtuse angle with a horizontal plane on the epitaxial layer 200 of the transient substrate 100 through gluing, exposing and developing;
s12: forming a negative photoresist 03 with the bottommost surface forming an acute angle with the horizontal plane above the positive photoresist 02 through gluing, exposing and developing;
s13: a metal layer 031 covering the epitaxial layer 200 and the negative photoresist 03 is formed, the positive photoresist 02, the negative photoresist 03 and the metal layer 031 located above the negative photoresist 03 are removed by a lift-off process, and the metal layer 031 located on the epitaxial layer 200 forms the inverted trapezoidal metal layer 30.
The size of the obtuse angle formed by the positive photoresist 02 can be controlled by adjusting the exposure.
Different from the first embodiment in which the inverted trapezoidal metal layer 30 is formed by etching a metal layer with different etching rates, the second embodiment in which a reversed trapezoidal reverse mold space is prepared in advance for the preparation of the inverted trapezoidal metal layer 30 by using a lamination formed by the positive photoresist 02 and the negative photoresist 03 with different shapes on the epitaxial layer 200. Specifically, positive photoresist 02 is adopted to form a regular trapezoid shape in array arrangement, and the bottom side of the regular trapezoid shape forms an obtuse angle with a horizontal plane; then, a negative photoresist 03 is adopted to form an inverted trapezoidal shape above the positive photoresist 02, and the bottom edge of the inverted trapezoidal shape forms an acute angle with the horizontal plane; then, a metal layer 031 is formed on the substrate by a plating process such as sputtering, the two photoresists and the metal layer 031 deposited on the negative photoresist are stripped, and the remaining metal layer 031 between the photoresist stacks forms the inverted trapezoid metal layer 30.
It should be noted that, in order not to affect the preparation of the subsequent inverted trapezoid metal layer 30, the top width of the inverted trapezoid formed by the negative photoresist 03 is greater than the top width of the regular trapezoid formed by the positive photoresist 02 and less than the bottom width of the regular trapezoid, which facilitates the deposition of the metal layer 031 between the sides of the two regular trapezoids at the bottom during the subsequent metal layer plating on the substrate, and facilitates the formation of the shape of the inverted trapezoid metal layer.
After the inverted trapezoid-shaped metal layer 30 is manufactured, the micro light emitting diode 20 is manufactured, and step S2 is about how to manufacture the micro light emitting diode 20, as shown in fig. 3, step S2 specifically includes the following steps:
s21: performing glue coating, exposure and development on the basis of the step S1 to form a second photoresist 04 surrounding the inverted trapezoidal metal layer 30;
s22: forming a micro light-emitting diode 20 positioned below the second photoresist 04 by adopting an etching process;
s23: the second photoresist 04 is stripped.
The second photoresist 04 is used as a protection layer of the inverted trapezoid metal layer 30 during the etching formation of the micro light emitting diode 20, and the micro light emitting diode 20 with the inverted trapezoid metal layer 30 on the top is formed after the second photoresist 04 is stripped, because of the existence of the second photoresist 04, the top width of the micro light emitting diode 20 is inevitably greater than the top width of the inverted trapezoid metal layer 30.
As shown in fig. 4, step S3 is that the transfer head 50 transfers the micro light emitting diode 20 with the inverted trapezoid metal layer 30 on the top to the second electrode 44 of the display backplane 40, the second electrode 44 is made of a bonding type material, the second electrode 44 is cured by heating to fix the micro light emitting diode 20 thereon, and after the transfer is completed, the transfer head 50 is removed.
Then, in order to realize the conduction between the micro light emitting diode 20 and the first electrode 41 on the display back plate 40, as shown in fig. 5, the step S4 specifically includes the following steps:
s41: forming an insulating layer 42 covering the entire surface of the display back plate 40 on the basis of step S3;
s42: removing the insulating layer 42 and the inverted trapezoidal metal layer 30 on the top of the micro light-emitting diode 20 by using an etching process to form a first opening 21 on the top of the micro light-emitting diode 20;
s43: performing glue coating, exposure, and development to form a second opening 411 on top of the first electrode 41;
s44: the metal oxide layer 43 covering the first opening 21 and the second opening 411 is formed, and the micro light emitting diode 20 and the first electrode 41 are conducted.
Wherein, the material of the insulating layer 42 can adopt SiO2May also be Al2O3And other materials to protect the sidewalls of the micro leds 20; the first electrode 41 is disposed on the display back plate 40 for conducting the micro light emitting diode 20. The insulating layer 42 formed on the display back plate 40 by sputtering or the like has a reversed trapezoid metal layer 30 structure, so that the insulating layer 42 is broken at the reversed trapezoid metal layer 30, and the reversed trapezoid metal layer 30 and the insulating layer 42 above the reversed trapezoid metal layer 30 can be etched and stripped at the broken position by using a wet etching process to form the first opening 21 at the top of the micro light emitting diode 20. In order to ensure that the insulating layer 42 forms a fault at the inverted trapezoid metal layer 30, the thickness of the insulating layer 42 does not exceed the thickness of the inverted trapezoid metal layer 30.
The micro light emitting diode 20 with the inverted trapezoid metal layer 30 removed is formed with a first opening 21 on the top, a second opening 411 is formed at the first electrode 41 by a photoresist developing and etching process, and finally, the micro light emitting diode 20 and the first electrode 41 are conducted by a second electrode 44 under the micro light emitting diode 20 by forming a metal oxide layer 43 on the first opening 21 and the second opening 411, wherein the metal oxide layer 43 may be ITO.
According to the invention, the inverted trapezoidal metal layer positioned above the micro light-emitting diode is prepared in advance, then the whole insulating layer is formed on the display back plate by adopting a coating process so as to protect the side wall of the micro light-emitting diode, due to the inverted trapezoidal metal layer structure, the insulating layer can be disconnected at the metal inverted layer, then the inverted trapezoidal metal layer and the insulating layer above the inverted trapezoidal metal layer are stripped off by etching, so that the top of the micro light-emitting diode is opened, finally, the metal oxide layer is plated to realize the conduction of the upper electrode and the lower electrode of the micro light-emitting diode, and the problem that the top of the micro light-emitting diode is difficult to. In addition, the invention uses the insulating layer to replace the light resistance, thus solving the problems of easy electric leakage and poor uniformity of the micro light-emitting diode under the protection of the light resistance.
It should be noted that the above mentioned embodiments are only preferred embodiments of the present invention, but the present invention is not limited to the details of the above embodiments, and it should be noted that, for those skilled in the art, it is possible to make various modifications and amendments within the technical concept of the present invention without departing from the principle of the present invention, and various modifications, amendments and equivalents of the technical solution of the present invention should be regarded as the protection scope of the present invention.
Claims (9)
1. A manufacturing method of a micro light-emitting diode display back plate is characterized by comprising the following steps:
s1: forming inverted trapezoidal metal layers in array arrangement on the epitaxial layer of the transient substrate;
s2: forming a micro light-emitting diode below the inverted trapezoidal metal layer;
s3: the transfer head transfers the micro light-emitting diode with the inverted trapezoidal metal layer on the top to a second electrode of the display back plate;
s4: and forming a first opening on the top of the micro light-emitting diode and a second opening on the top of the first electrode on the display back plate, covering the metal oxide layer on the first opening and the second opening, and conducting the micro light-emitting diode with the first electrode.
2. The method for manufacturing a micro light emitting diode display backplane according to claim 1, wherein the step S1 specifically comprises the steps of:
s11: sequentially forming a first metal layer and a second metal layer positioned above the first metal layer on an epitaxial layer of the transient substrate, wherein the etching rate of the first metal layer is greater than that of the second metal layer;
s12: performing gluing, exposure and development on the basis of the step S11 to form a first photoresist arranged in an array;
s13: etching the first metal layer and the second metal layer by adopting an etching process to form an inverted trapezoidal metal layer positioned below the first light resistor;
s14: the first photoresist is stripped.
3. The method for manufacturing a micro light emitting diode display backplane according to claim 1, wherein the step S1 specifically comprises the steps of:
s11: forming positive photoresist which is arranged in an array mode and has the bottommost surface forming an obtuse angle with a horizontal plane on the epitaxial layer of the transient substrate through gluing, exposing and developing;
s12: forming a negative photoresist with the bottommost surface forming an acute angle with the horizontal plane above the positive photoresist through gluing, exposing and developing;
s13: and forming a metal layer covering the epitaxial layer and the negative photoresist, removing the positive photoresist, the negative photoresist and the metal layer positioned above the negative photoresist by adopting a stripping process, and forming an inverted trapezoidal metal layer on the metal layer positioned on the epitaxial layer.
4. The method for manufacturing a micro light emitting diode display backplane according to claim 1, wherein the step S2 specifically comprises the steps of:
s21: performing glue coating, exposure and development on the basis of the step S1 to form a second photoresist surrounding the inverted trapezoidal metal layer;
s22: forming a micro light-emitting diode positioned below the second light resistor by adopting an etching process;
s23: the second photoresist is stripped.
5. The method of claim 3, wherein the obtuse angle formed by the positive photoresist is controlled by exposure.
6. The method of claim 3, wherein the top width of the negative photoresist is greater than the top width of the positive photoresist and less than the bottom width of the positive photoresist.
7. The method of claim 4, wherein the top width of the formed micro light emitting diode is greater than the top width of the inverted trapezoid metal layer.
8. The method for manufacturing a micro light emitting diode display backplane according to claim 1, wherein the step S4 specifically comprises the steps of:
s41: forming an insulating layer covering the display back panel on the basis of the step S3;
s42: removing the inverted trapezoidal metal layer on the top of the miniature light-emitting diode by adopting an etching process to form a first opening on the top of the miniature light-emitting diode;
s43: gluing, exposing and developing to form a second opening on the top of the first electrode;
s44: and forming a metal oxide layer covering the first opening and the second opening, and conducting the micro light-emitting diode and the first electrode.
9. The method of claim 8, wherein the insulating layer has a thickness not exceeding the thickness of the inverted trapezoidal metal layer.
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| CN111725363A (en) * | 2020-05-28 | 2020-09-29 | 南京中电熊猫液晶显示科技有限公司 | Miniature light-emitting diode backboard and manufacturing method thereof |
| CN111722440A (en) * | 2020-06-30 | 2020-09-29 | 上海天马微电子有限公司 | Driving back plate, backlight module, manufacturing method and display panel |
| CN112133719A (en) * | 2020-08-26 | 2020-12-25 | 南京中电熊猫液晶显示科技有限公司 | Manufacturing method of micro light-emitting diode |
| CN112397543A (en) * | 2020-10-28 | 2021-02-23 | 南京中电熊猫液晶显示科技有限公司 | Manufacturing method of micro light-emitting diode |
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| CN111211213B (en) * | 2020-04-21 | 2020-09-04 | 南京中电熊猫平板显示科技有限公司 | Display back plate and manufacturing method thereof |
| CN111725363A (en) * | 2020-05-28 | 2020-09-29 | 南京中电熊猫液晶显示科技有限公司 | Miniature light-emitting diode backboard and manufacturing method thereof |
| CN111722440A (en) * | 2020-06-30 | 2020-09-29 | 上海天马微电子有限公司 | Driving back plate, backlight module, manufacturing method and display panel |
| CN112133719A (en) * | 2020-08-26 | 2020-12-25 | 南京中电熊猫液晶显示科技有限公司 | Manufacturing method of micro light-emitting diode |
| CN112397543A (en) * | 2020-10-28 | 2021-02-23 | 南京中电熊猫液晶显示科技有限公司 | Manufacturing method of micro light-emitting diode |
| CN112490176A (en) * | 2020-12-02 | 2021-03-12 | 南京中电熊猫液晶显示科技有限公司 | Transfer structure and method of micro light-emitting diode |
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| CN110993509B (en) | 2021-07-13 |
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