CN112382693A - Photoelectric sensor induction pair tube - Google Patents
Photoelectric sensor induction pair tube Download PDFInfo
- Publication number
- CN112382693A CN112382693A CN202011086693.2A CN202011086693A CN112382693A CN 112382693 A CN112382693 A CN 112382693A CN 202011086693 A CN202011086693 A CN 202011086693A CN 112382693 A CN112382693 A CN 112382693A
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- Prior art keywords
- wafer
- receiving
- substrate
- transmission
- transmitting
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Links
- 230000006698 induction Effects 0.000 title description 4
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 239000003292 glue Substances 0.000 claims abstract description 14
- 230000005540 biological transmission Effects 0.000 claims description 24
- 238000003466 welding Methods 0.000 claims description 4
- 241000218202 Coptis Species 0.000 claims description 3
- 235000002991 Coptis groenlandica Nutrition 0.000 claims description 3
- 229920000298 Cellophane Polymers 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 abstract description 17
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 6
- 239000010931 gold Substances 0.000 abstract description 2
- 229910052737 gold Inorganic materials 0.000 abstract description 2
- 238000005476 soldering Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 7
- 238000005520 cutting process Methods 0.000 description 6
- 239000002390 adhesive tape Substances 0.000 description 4
- 239000000178 monomer Substances 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 238000010923 batch production Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/125—Composite devices with photosensitive elements and electroluminescent elements within one single body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention relates to the technical field of photoelectric sensors, in particular to a photoelectric sensor sensing pair tube; the invention comprises a shielding cover and a substrate, wherein the front surface and the back surface of the substrate are provided with plane circuits, the front surface of the substrate is provided with a receiving wafer and an emitting wafer, the receiving wafer and the emitting wafer are respectively provided with gold wires, receiving black glue is covered outside the receiving wafer, emitting transparent glue is covered outside the emitting wafer, and the shielding cover is covered outside the receiving black glue and the emitting transparent glue; according to the invention, the receiving wafer and the transmitting wafer are respectively welded on the front surface of the substrate, and the back surface of the substrate adopts the planar pins, so that the product has a simple integral structure, is convenient to package, can be directly produced in batches, and has high production efficiency.
Description
Technical Field
The invention relates to the technical field of photoelectric sensors, in particular to a photoelectric sensor sensing pair tube.
Background
Present photoelectric sensor, including transmitting tube and receiver tube, these two are independent products, and present product all has long pin, when assembling with the circuit board, need reserve long pin jack on the circuit board, peg graft transmitting tube and receiver tube on the circuit board through operating personnel is manual, the wave-soldering is carried out to rethread wave-soldering stove, the pin of outstanding circuit board bottom is cuted through operating personnel is manual again at last, whole production technology is complicated, and can't realize fast production, low in production efficiency, high in production cost, the product volume is also great, the bellied phenomenon of transmitting tube and receiver tube can appear when wave-soldering.
If buckle the long pin of current transmitting tube and receiver tube, make long pin can play the effect of supporting the main part, also can carry out SMD welding through the reflow oven, can improve than aforementioned wave-soldering technology production efficiency, however, the packing of transmitting tube and receiver tube is great, also owing to have long pin simultaneously, after transmitting tube and receiver tube are made, still need buckle the process shaping through the pin, and production efficiency is also lower.
Therefore, in view of the above-mentioned drawbacks of the conventional transmitting and receiving tubes and the manufacturing process thereof, there is a need for improvement of the conventional transmitting and receiving tubes and the manufacturing process thereof.
Disclosure of Invention
The invention aims to provide a photoelectric sensor induction pair tube aiming at the defects of the prior art, which solves the problems of a transmitting tube and a receiving tube of the prior photoelectric sensor that: low production efficiency in subsequent assembly and application, and the like.
In order to realize the purpose, the invention is realized by the following technical scheme: photoelectric sensor responds to geminate transistor, including shield cover, base plate, the tow sides of base plate have the plane circuit, and the base plate openly is furnished with receiving wafer, transmission wafer, and receiving wafer, transmission wafer are furnished with the gold thread respectively, and receiving wafer is dusted with the receipt blackglue, and transmission wafer is dusted with the transmission clearness glue, and the receipt blackness glue, transmission clearness glue enclosing cover have the shield cover.
The planar circuit on the reverse side of the substrate is a planar pin.
The bottom surface of the shielding cover forms a containing groove, the upper end of the shielding cover is provided with a transmission hole, and the transmission hole penetrates through the shielding cover and the containing groove.
The receiving wafer and the transmitting wafer are respectively positioned in the accommodating groove.
The planar circuit on the front surface of the substrate comprises a receiving circuit and a transmitting circuit which are respectively used for welding a receiving wafer and a transmitting wafer.
The invention has the beneficial effects that: through will receiving the wafer, the transmission wafer welds respectively in the front of base plate, and the back of base plate adopts the plane pin to make product overall structure succinct, the packing is convenient, can direct batch production moreover, and production efficiency is high, simultaneously, during follow-up assembly circuit board, can adopt SMD reflow soldering processing production, improves follow-up assembly production's efficiency.
Drawings
FIG. 1 is a schematic structural diagram of the present invention.
Fig. 2 is a schematic top view of the present invention.
Fig. 3 is a schematic bottom view of the present invention.
FIG. 4 is a schematic sectional view taken along line A-A of the first embodiment.
FIG. 5 is a schematic cross-sectional view taken along line B-B of the first embodiment.
Fig. 6 is an exploded view of the first embodiment.
FIG. 7 is a schematic sectional view taken along line A-A in the second embodiment.
FIG. 8 is a schematic sectional view taken along line B-B of the second embodiment.
Fig. 9 is an exploded schematic view of the second embodiment.
FIG. 10 is a schematic view of a process of the present invention.
Fig. 11 is an exploded view of the product of fig. 10.
FIG. 12 is a schematic view of a second process of the present invention.
Fig. 13 is a schematic diagram of the patch emitting tube of fig. 12.
Fig. 14 is a schematic view of the patch receiving tube of fig. 12.
Fig. 15 is an exploded view of the cutting unit of fig. 12.
Reference numbers and descriptions:
the device comprises a shielding cover 1, a receiving black glue 2, an emitting transparent glue 3, an outer baffle wall 4, a gold thread 5, a receiving wafer 6, an emitting wafer 7, a substrate 8, a containing groove 9, a spacing block 10, a receiving tube 11, an emitting tube 12, a pin 13, a transmission hole 14, a receiving substrate 15 and an emitting substrate 16.
Detailed Description
The invention will be further described with reference to the accompanying drawings.
Referring to fig. 1-9, the photoelectric sensor sensing pair tube of the present invention comprises: the shielding cover 1 and the substrate 8 are provided with planar circuits on the front side and the back side of the substrate 8, and the planar circuit on the back side of the substrate 8 is a planar pin 13 for subsequent solder paste printing, so that reflow soldering paster processing is realized, and rapid production is realized.
The plane circuit for welding the receiving wafer 6 and the transmitting wafer 7 comprises a receiving circuit and a transmitting circuit, wherein the receiving wafer 6 and the transmitting wafer 7 are arranged on the front surface of a substrate 8, gold wires 5 are respectively arranged on the receiving wafer 6 and the transmitting wafer 7, a receiving black adhesive 2 is covered outside the receiving wafer 6, and a transmitting transparent adhesive 3 is covered outside the transmitting wafer 7.
The bottom surface of the shielding cover 1 of the invention forms a containing groove 9, the upper end of the shielding cover 1 is provided with a transmission hole 14, and the transmission hole 14 penetrates through the shielding cover 1 and the containing groove 9.
The photoelectric sensor induction pair tube integrates the transmitting tube and the receiving tube, is integrally manufactured into a square shape, has the transmission hole 14 at the top for light transmission, and has the flat pin 13 at the bottom, and the pin 13 is integrally formed when the substrate 8 is processed without the traditional pin folding.
In the first embodiment of the present invention, the side surface of the shielding cover 1 has the outer retaining wall 4, the middle portion of the lower end of the shielding cover 1 has the spacing block 10, and the accommodating groove 9 is formed between the outer retaining wall 4 and the spacing block 10. In addition, the planar wiring of the front surface of the substrate 8 is used for soldering the receiving die 6, the transmitting die 7, and the gold wire 5.
In the second embodiment of the present invention, the planar circuits on the front and back sides of the substrate 8 are the planar pins 13, the planar circuits on the back sides of the receiving substrate 15 and the transmitting substrate 16 are the planar pins 13, the planar circuits on the front sides of the receiving substrate 15 and the transmitting substrate 16 are used for soldering the receiving die 6 and the transmitting die 7, and the pins 13 on the front side of the substrate 8 are used for soldering the pins 13 on the back sides of the receiving substrate 15 and the transmitting substrate 16.
Referring to fig. 10 and 11, a first process according to the present invention, corresponding to the first embodiment,
step A: a substrate 8 is formed, a plurality of plane circuits are arranged on the substrate 8,
and B: a receiving die 6 and a transmitting die 7 are stuck on a substrate 8,
and C: the gold wire 5 is welded on the surface of the substrate,
step D: sealing the transmitting tube 12, sealing the transmitting wafer 7 with the transmitting transparent glue 3,
step E: sealing the receiving tube 11, sealing the receiving wafer 6 with the receiving sealant 2,
step F: the receiving tube 11, the transmitting tube 12 and the front surface of the substrate 8 are cut,
step G: the back side of the shielding cover 1 is glued,
step H: the cover shields the cover 1 from the outside of the container,
step I: cutting to form a pair of tube monomers.
Wherein, the above steps D and E can be exchanged in sequence.
Wherein, the transparent adhesive tape 3 of transmission in above-mentioned step D, step E is banded, receives black adhesive tape 2 and is banded, and transmission transparent adhesive tape 3, receipt black adhesive tape 2 all include arch cover, connecting strip, and a plurality of arch covers connect into banded through the connecting strip, and each transmission wafer 7, receipt wafer 6 all correspond and are located arch cover.
In step G, the shield cover 1 is formed with the transmission holes 14 in advance, and may be formed with cutting lines for the step I cutting in advance.
Referring to fig. 12 to 15, a second production process of the present invention, corresponding to the second embodiment,
the method comprises the following steps: a single body of the launch tube 12 is fabricated,
step two: a receiving pipe 11 is manufactured as a single body,
step three: a substrate 8 is manufactured, the front surface and the back surface of the substrate 8 are both provided with planar pins 13,
step four: the emitter tube 12 is soldered to the front side of the base plate 8,
step five: the receiving pipe 11 is soldered to the front surface of the base plate 8,
step six: the front side of the base plate 8 is cut open,
step seven: the bottom surface of the shielding cover 1 is back glued,
step eight: the shield cover 1 is covered on the substrate 8,
step nine: cutting to form a pair of tube monomers.
Wherein, the order of the first step and the second step can be exchanged.
Wherein, the order of the step four and the step five can be exchanged.
Referring to fig. 13, in the first step, the process of manufacturing the transmitting tube 12 monomer is as follows:
step A: an emitting substrate 16 is formed, a plurality of planar circuits are arranged on the emitting substrate 16,
and B: the emitter die 7 is attached to the emitter substrate 16,
and C: the gold wire 5 is welded on the surface of the substrate,
step D: the emissive die 7 is sealed with an emissive transparent glue 3,
step E: the cutting forms a single body of the launch tube 12.
Referring to fig. 14, in the second step, the process of manufacturing the receiving pipe 11 monomer is as follows:
step A: a receiving substrate 15 is formed, a plurality of planar circuits are arranged on the receiving substrate 15,
and B: the receiving die 6 is stuck on the receiving substrate 15,
and C: the gold wire 5 is welded on the surface of the substrate,
step D: the receiving die 6 is sealed with the receiving black glue 2,
step E: the receiving tube 11 is cut into individual pieces.
Claims (5)
1. Photoelectric sensor response geminate transistor, its characterized in that: including shielding lid, base plate, the tow sides of base plate have the plane circuit, and the base plate openly is furnished with receiving wafer, transmission wafer, and receiving wafer, transmission wafer are furnished with the gold thread respectively, and receiving wafer dustcoat has the receipt blackglue, and transmission wafer dustcoat has the transmission cellophane glue, and the receipt blackglue, transmission cellophane glue enclosing cover have the shielding lid.
2. The photosensor pair of claim 1, wherein: the planar circuit on the reverse side of the substrate is a planar pin.
3. The photosensor pair of claim 1, wherein: the bottom surface of the shielding cover forms a containing groove, the upper end of the shielding cover is provided with a transmission hole, and the transmission hole penetrates through the shielding cover and the containing groove.
4. The photosensor pair of claim 1, wherein: the receiving wafer and the transmitting wafer are respectively positioned in the accommodating groove.
5. The photosensor pair of claim 1, wherein: the planar circuit on the front surface of the substrate comprises a receiving circuit and a transmitting circuit which are respectively used for welding a receiving wafer and a transmitting wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011086693.2A CN112382693A (en) | 2020-10-12 | 2020-10-12 | Photoelectric sensor induction pair tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011086693.2A CN112382693A (en) | 2020-10-12 | 2020-10-12 | Photoelectric sensor induction pair tube |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112382693A true CN112382693A (en) | 2021-02-19 |
Family
ID=74581305
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011086693.2A Pending CN112382693A (en) | 2020-10-12 | 2020-10-12 | Photoelectric sensor induction pair tube |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112382693A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101236947A (en) * | 2008-01-25 | 2008-08-06 | 苏州固锝电子股份有限公司 | Semiconductor device with novel package structure |
| JP2014036090A (en) * | 2012-08-08 | 2014-02-24 | Ricoh Co Ltd | Imaging sensor module and method for manufacturing the same |
| CN109119347A (en) * | 2018-09-03 | 2019-01-01 | 惠州泓亚智慧科技有限公司 | A kind of packaging method of the biological characteristic optical sensor of wearable device |
| CN110444608A (en) * | 2019-05-28 | 2019-11-12 | 弘凯光电(深圳)有限公司 | A kind of optical sensor of range measurement and preparation method thereof |
| CN111710753A (en) * | 2020-06-19 | 2020-09-25 | 深圳成光兴光电技术股份有限公司 | Multispectral transmitting and receiving integrated sensor and detection circuit |
-
2020
- 2020-10-12 CN CN202011086693.2A patent/CN112382693A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101236947A (en) * | 2008-01-25 | 2008-08-06 | 苏州固锝电子股份有限公司 | Semiconductor device with novel package structure |
| JP2014036090A (en) * | 2012-08-08 | 2014-02-24 | Ricoh Co Ltd | Imaging sensor module and method for manufacturing the same |
| CN109119347A (en) * | 2018-09-03 | 2019-01-01 | 惠州泓亚智慧科技有限公司 | A kind of packaging method of the biological characteristic optical sensor of wearable device |
| CN110444608A (en) * | 2019-05-28 | 2019-11-12 | 弘凯光电(深圳)有限公司 | A kind of optical sensor of range measurement and preparation method thereof |
| CN111710753A (en) * | 2020-06-19 | 2020-09-25 | 深圳成光兴光电技术股份有限公司 | Multispectral transmitting and receiving integrated sensor and detection circuit |
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| PB01 | Publication | ||
| PB01 | Publication | ||
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| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20210219 |