CN112382578B - Wafer bonding control method, control device, processor and bonding system - Google Patents
Wafer bonding control method, control device, processor and bonding system Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
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- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/76—Apparatus for connecting with build-up interconnects
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- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
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- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
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- H—ELECTRICITY
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- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/76—Apparatus for connecting with build-up interconnects
- H01L2224/767—Means for aligning
- H01L2224/76753—Means for optical alignment, e.g. sensors
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
- H01L2224/8212—Aligning
- H01L2224/82121—Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors
Abstract
The application provides a wafer bonding control method, a control device, a processor and a bonding system, wherein the method comprises the following steps: adjusting a first magnification difference value of the first wafer and/or a second magnification difference value of the second wafer to enable the first magnification difference value and the second magnification difference value to be the same, wherein the first magnification difference value is a difference value between a first magnification of the first exposure area in a first direction and a second magnification of the second exposure area in a second direction, and the second magnification difference value is a difference value between a third magnification of the second exposure area in the first direction and a fourth magnification of the second exposure area in the second direction; adjusting the first magnification and the second magnification, or adjusting the third magnification and the fourth magnification so that the first magnification is the same as the third magnification and the second magnification is the same as the fourth magnification; after the adjustment, the first wafer and the second wafer are controlled to be bonded. The method can accurately compensate the expansion coefficients of the wafer in the X and Y directions.
Description
Technical Field
The present application relates to the field of semiconductors, and, in particular, to a wafer bonding control method, a control device, a computer readable storage medium, a processor and a bonding system.
Background
In the existing X-stacking (X-stacking) framework of the three-dimensional flash memory (3 demension NAND flash memory, abbreviated as 3D NAND), the alignment accuracy of Bonding (Bonding) has a great influence on the production yield, especially the yield influence of the exposure area (shot) of the wafer edge area directly determines the effective wafer size (wafer) range of the X-stacking framework. In the X-stacking framework, the expansion matching degree between the upper and lower wafers and in the X and Y directions directly affects the alignment accuracy of bonding, as shown in fig. 1, the expansion degree of the CMOS (Complementary Metal Oxide Semiconductor ) wafer and the Array wafer in the X and Y directions is inconsistent, so that after the expansion coefficients in the X and Y directions are adjusted in equal proportion by the subsequent bonding process, the CMOS wafer and the Array wafer cannot be aligned. Therefore, a method is needed to accurately compensate the expansion coefficients of the wafer in the X and Y directions, so as to ensure the alignment accuracy of the subsequent bonding.
The above information disclosed in the background section is only for enhancement of understanding of the background art from the technology described herein and, therefore, may contain some information that does not form the prior art that is already known in the country to a person of ordinary skill in the art.
Disclosure of Invention
The application mainly aims to provide a wafer bonding control method, a control device, a computer readable storage medium, a processor and a bonding system, so as to solve the problem that the expansion coefficients of a wafer in the X and Y directions cannot be accurately compensated in the prior art.
According to an aspect of the embodiment of the present application, there is provided a method for controlling wafer bonding, including: adjusting a first magnification difference value of a first wafer and/or a second magnification difference value of a second wafer, so that the first magnification difference value is the same as the second magnification difference value, wherein the first magnification difference value is a difference value between a first magnification of a first exposure area in a first direction and a second magnification of the first exposure area in a second direction, the first direction is perpendicular to the second direction, the first direction and the second direction are perpendicular to a thickness direction of the first wafer, the first wafer comprises a plurality of first exposure areas, the second magnification difference value is a difference value between a third magnification of the second exposure area in the first direction and a fourth magnification of the second exposure area in the second direction, and the second wafer comprises a plurality of second exposure areas; adjusting the first magnification and the second magnification, or adjusting the third magnification and the fourth magnification such that the first magnification and the third magnification are the same, and such that the second magnification and the fourth magnification are the same; and after the first magnification and the second magnification are adjusted or the third magnification and the fourth magnification are adjusted, controlling the first wafer and the second wafer to be bonded.
Optionally, adjusting the first magnification difference value of the first wafer and/or the second magnification difference value of the second wafer so that the first magnification difference value and the second magnification difference value are the same includes: determining a first multiplying power difference value of a first wafer; determining a second multiplying power difference value of a second wafer; and adjusting the size of the second exposure area so that the adjusted second multiplying power difference value is the same as the first multiplying power difference value.
Optionally, adjusting the size of the second exposure area so that the adjusted second magnification difference value is the same as the first magnification difference value includes: the first multiplying power difference value and the second multiplying power difference value are subjected to difference to obtain a sub multiplying power difference value; determining an adjustment value of the size of the second exposure area according to the sub-multiplying power difference value; and adjusting the width of the second exposure area in the first direction and/or the width of the second exposure area in the second direction according to the adjustment value, so that the adjusted second multiplying power difference value is the same as the first multiplying power difference value.
Optionally, determining the first magnification difference of the first wafer includes: obtaining the first magnification according to the ratio of the actual width value and the design value of the first exposure area in the first direction; obtaining the second magnification according to the ratio of the actual width value and the design value of the first exposure area in the second direction; and performing difference between the first magnification and the second magnification to obtain the first magnification difference.
Optionally, determining the second magnification difference of the second wafer includes: obtaining the third magnification according to the ratio of the actual width value of the second exposure area in the first direction to the design value; obtaining the fourth magnification according to the ratio of the actual width value and the design value of the second exposure area in the second direction; and performing difference between the third magnification and the fourth magnification to obtain the second magnification difference.
Optionally, adjusting the first magnification and the second magnification, or adjusting the third magnification and the fourth magnification such that the first magnification and the third magnification are the same, and such that the second magnification and the fourth magnification are the same, includes: determining a third magnification difference value, wherein the third magnification difference value is the difference value between the first magnification and the third magnification; and adjusting the third magnification difference value by the first magnification and the second magnification so that the adjusted first magnification is the same as the third magnification and the adjusted second magnification is the same as the fourth magnification.
According to another aspect of the embodiments of the present application, there is further provided a control device for wafer bonding, including a first adjusting unit, a second adjusting unit, and a control unit, where the first adjusting unit is configured to adjust a first magnification difference value of a first wafer and/or a second magnification difference value of a second wafer so that the first magnification difference value and the second magnification difference value are the same, where the first magnification difference value is a difference value between a first magnification of a first exposure area in a first direction and a second magnification of the first exposure area in a second direction, the first direction is perpendicular to the second direction, the first direction and the second direction are perpendicular to a thickness direction of the first wafer, the first wafer includes a plurality of first exposure areas, the second magnification difference value is a difference value between a third magnification of the second exposure area in the first direction and a fourth magnification of the second direction, and the second wafer includes a plurality of second exposure areas; the second adjusting unit is configured to adjust the first magnification and the second magnification, or adjust the third magnification and the fourth magnification so that the first magnification and the third magnification are the same, and so that the second magnification and the fourth magnification are the same; the control unit is used for controlling the first wafer and the second wafer to be bonded after the first magnification and the second magnification are adjusted or the third magnification and the fourth magnification are adjusted.
According to still another aspect of the embodiments of the present application, there is also provided a computer-readable storage medium including a stored program, wherein the program performs any one of the methods.
According to yet another aspect of the embodiments of the present application, there is further provided a processor, where the processor is configured to execute a program, where the program executes any one of the methods.
According to another aspect of the embodiment of the present application, there is further provided a bonding system, including a bonding device for a wafer and a control device for bonding the wafer, where the control device for bonding the wafer is configured to execute any one of the methods.
The application provides a control method for wafer bonding, which comprises the steps of firstly adjusting a first multiplying power difference value of a first wafer and/or a second multiplying power difference value of a second wafer to ensure that the first multiplying power difference value is the same as the second multiplying power difference value, and ensuring that the multiplying power difference values of exposure areas of the two wafers after adjustment are the same, wherein the multiplying power difference value is the difference value of the multiplying power of the exposure areas in a first direction and a second direction; then adjusting the first magnification and the second magnification, or adjusting the third magnification and the fourth magnification, so that the first magnification and the third magnification are the same, and the second magnification and the fourth magnification are the same, ensuring that the widths of the adjusted exposure areas of the two wafers in the first direction are the same, ensuring that the widths of the adjusted exposure areas of the two wafers in the second direction are the same, and facilitating the subsequent bonding to be basically aligned; and finally, after the first magnification and the second magnification are adjusted or the third magnification and the fourth magnification are adjusted, controlling the first wafer and the second wafer to be bonded. Compared with the prior art that the first magnification and the second magnification are adjusted by the same value before bonding, or the third magnification and the fourth magnification are adjusted by the same value, the method not only comprises the steps of adjusting the first magnification and the second magnification by the same value, and/or adjusting the third magnification and the fourth magnification by the same value, but also adjusts the first magnification difference value and/or the second magnification difference value before so that the first magnification difference value and the second magnification difference value are the same, thereby realizing accurate compensation of the expansion coefficient of the wafer, further ensuring that the alignment precision of the two wafers is better, and further avoiding the influence of low bonding alignment precision on the subsequent process and the influence of the production yield.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the application. In the drawings:
FIG. 1 is a flow chart of a control method of wafer bonding according to an embodiment of the application;
FIG. 2 is a flow chart illustrating a control method of wafer bonding according to an embodiment of the present application;
FIG. 3 shows a schematic diagram of two wafers to be bonded according to an embodiment of the application; and
fig. 4 shows a schematic diagram of a control device for wafer bonding according to an embodiment of the application.
Wherein the above figures include the following reference numerals:
10. a first adjusting unit; 20. a second adjusting unit; 30. and a control unit.
Detailed Description
It should be noted that, without conflict, the embodiments of the present application and features of the embodiments may be combined with each other. The application will be described in detail below with reference to the drawings in connection with embodiments.
In order that those skilled in the art will better understand the present application, a technical solution in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments of the present application, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present application without making any inventive effort, shall fall within the scope of the present application.
It should be noted that the terms "first," "second," and the like in the description and the claims of the present application and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate in order to describe the embodiments of the application herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" another element, it can be directly on the other element or intervening elements may also be present. Furthermore, in the description and in the claims, when an element is described as being "connected" to another element, the element may be "directly connected" to the other element or "connected" to the other element through a third element.
For convenience of description, the following will describe some terms or terminology involved in the embodiments of the present application:
magnification ratio: the ratio of the actual width value to the design value of the exposure area of the wafer includes the magnification of the exposure area in the X direction and the magnification in the Y direction.
As described in the background art, in the prior art, the expansion coefficients of the wafer in the X and Y directions cannot be accurately compensated, and in order to solve the above-mentioned problems, the present application provides a wafer bonding control method, a control device, a computer readable storage medium, a processor, and a bonding system.
According to an exemplary embodiment of the present application, a method of controlling wafer bonding is provided.
Fig. 2 is a flow chart of a method of controlling wafer bonding according to an embodiment of the present application. As shown in fig. 2, the method comprises the steps of:
step S101, adjusting a first magnification difference value of a first wafer and/or a second magnification difference value of a second wafer so that the first magnification difference value is the same as the second magnification difference value, wherein the first magnification difference value is a difference value between a first magnification of a first exposure area in a first direction and a second magnification of the first exposure area in a second direction, the first direction is perpendicular to the second direction, the first direction and the second direction are perpendicular to a thickness direction of the first wafer, the first wafer comprises a plurality of first exposure areas, the second magnification difference value is a difference value between a third magnification of the second exposure area in the first direction and a fourth magnification of the second exposure area in the second direction, and the second wafer comprises a plurality of second exposure areas;
Step S102, adjusting the first magnification and the second magnification, or adjusting the third magnification and the fourth magnification so that the first magnification is the same as the third magnification and the second magnification is the same as the fourth magnification;
and step S103, after the first magnification and the second magnification are adjusted or the third magnification and the fourth magnification are adjusted, the first wafer and the second wafer are controlled to be bonded.
According to the wafer bonding control method, the first multiplying power difference value of the first wafer and/or the second multiplying power difference value of the second wafer are/is adjusted firstly, so that the first multiplying power difference value is the same as the second multiplying power difference value, the same multiplying power difference value of the exposure areas of the two wafers after adjustment is ensured, and the multiplying power difference value is the difference value of the multiplying power of the exposure areas in the first direction and the second direction; then adjusting the first magnification and the second magnification, or adjusting the third magnification and the fourth magnification to make the first magnification and the third magnification identical, and make the second magnification and the fourth magnification identical, so as to ensure that the widths of the adjusted exposure areas of the two wafers in the first direction are identical, ensure that the widths of the adjusted exposure areas of the two wafers in the second direction are identical, and facilitate the subsequent bonding to be basically aligned; and finally, after the first magnification and the second magnification are adjusted or the third magnification and the fourth magnification are adjusted, controlling the first wafer and the second wafer to be bonded. Compared with the prior art that the first magnification and the second magnification are adjusted by the same value before bonding, or the third magnification and the fourth magnification are adjusted by the same value, the method not only comprises the steps that the first magnification and the second magnification are adjusted by the same value, and/or the third magnification and the fourth magnification are adjusted by the same value, but also the first magnification difference value and/or the second magnification difference value are adjusted before bonding, so that the first magnification difference value and the second magnification difference value are the same, accurate compensation of expansion coefficients of wafers is realized, the alignment precision of two wafers is better, and the influence of low bonding alignment precision on subsequent processes and the influence of production yield are avoided.
It should be noted that, a wafer includes a plurality of exposure areas, and the magnification of each exposure area of the wafer obtained after the photolithography exposure is the same in the first direction, and the magnification of each exposure area is the same in the second direction.
It should be noted that the steps illustrated in the flowcharts of the figures may be performed in a computer system such as a set of computer executable instructions, and that although a logical order is illustrated in the flowcharts, in some cases the steps illustrated or described may be performed in an order other than that illustrated herein.
According to a specific embodiment of the present application, adjusting the first magnification difference of the first wafer and/or the second magnification difference of the second wafer so that the first magnification difference is the same as the second magnification difference includes: determining a first multiplying power difference value of a first wafer; determining a second multiplying power difference value of a second wafer; and adjusting the size of the second exposure area so that the adjusted second multiplying power difference value is the same as the first multiplying power difference value. The third amplification factor and the fourth amplification factor of the second exposure area are adjusted by adjusting the size of the second exposure area, so that the adjusted second amplification factor difference value is the same as the first amplification factor difference value, further one-time compensation of the amplification factors of the two wafers in the first direction and the second direction is realized, the same numerical value is conveniently adjusted to the first amplification factor and the second amplification factor in the subsequent step, and/or the same numerical value is adjusted to the third amplification factor and the fourth amplification factor, further the amplification factor of the wafers, namely the accurate compensation of the expansion coefficient is further realized, and further the bonding alignment precision of the two wafers is ensured to be higher.
Specifically, in order to further ensure accurate compensation of the magnification in the first direction and the second direction of the two wafers, after determining the first magnification difference of the first wafer and determining the second magnification difference of the second wafer, the skilled person may also adjust the size of the first exposure area so that the adjusted first magnification difference is the same as the second magnification difference. Of course, after determining the first magnification difference of the first wafer and determining the second magnification difference of the second wafer, a person skilled in the art may also adjust the size of the first exposure area and the size of the second exposure area so that the adjusted first magnification difference is the same as the adjusted second magnification difference. The person skilled in the art can determine the wafers to be adjusted according to the actual situation.
According to another specific embodiment of the present application, adjusting the size of the second exposure area so that the adjusted second magnification difference is the same as the first magnification difference includes: the first multiplying power difference value and the second multiplying power difference value are subjected to difference to obtain a sub multiplying power difference value; determining an adjustment value of the size of the second exposure area according to the sub-multiplying power difference value; and adjusting the width of the second exposure area in the first direction and/or the width of the second exposure area in the second direction according to the adjustment value so that the adjusted second multiplying power difference value is the same as the first multiplying power difference value. According to the method, the first magnification difference value and the second magnification difference value are subjected to difference to obtain a sub-magnification difference value, an adjustment value of the size of the second exposure area is determined according to the sub-magnification difference value, and finally, the width of the second exposure area in the first direction and/or the width of the second exposure area in the second direction are adjusted according to the adjustment value, so that the adjusted second magnification difference value is the same as the first magnification difference value, one-time compensation of the magnifications of the two wafers in the first direction and the second direction is further realized, the same value is conveniently adjusted for the first magnification and the second magnification in the subsequent direction, and/or the same value is adjusted for the third magnification and the fourth magnification in the subsequent direction, the magnification of the wafers is further realized, namely, the accurate compensation of the expansion coefficient is further realized, and the alignment precision of bonding of the two wafers is further ensured to be higher.
Of course, after the first magnification difference is different from the second magnification difference to obtain a sub-magnification difference, a person skilled in the art may determine an adjustment value of the size of the first exposure area according to the sub-magnification difference, and adjust the width of the first exposure area in the first direction and/or the width of the first exposure area in the second direction according to the adjustment value, so that the adjusted first magnification difference is the same as the second magnification difference.
In an actual application process, determining a first multiplying power difference value of a first wafer includes: obtaining the first magnification according to the ratio of the actual width value and the design value of the first exposure area in the first direction; obtaining the second magnification according to the ratio of the actual width value and the design value of the first exposure area in the second direction; and performing difference between the first magnification and the second magnification to obtain the first magnification difference.
In an actual application process, determining a second multiplying power difference value of the second wafer includes: obtaining the third magnification according to the ratio of the actual width value and the design value of the second exposure area in the first direction; obtaining the fourth magnification according to the ratio of the actual width value and the design value of the second exposure area in the second direction; and obtaining the second magnification difference by making a difference between the third magnification and the fourth magnification.
In a specific embodiment, the first magnification difference and/or the second magnification difference of the first wafer and/or the second wafer are/is adjusted so that the first magnification difference and the second magnification difference are the same, so as to obtain a schematic diagram of two wafers to be bonded as shown in fig. 3, where the first wafer is a CMOS wafer, the second wafer is an Array wafer, the first direction is an X direction, the second direction is a Y direction, the first magnification difference Δ1=x1-Y1, the second magnification difference Δ2=x2-Y2, and the first magnification difference is the same as the second magnification difference.
According to still another specific embodiment of the present application, adjusting the first magnification and the second magnification, or adjusting the third magnification and the fourth magnification so that the first magnification and the third magnification are the same, and so that the second magnification and the fourth magnification are the same, includes: determining a third magnification difference value, wherein the third magnification difference value is the difference value between the first magnification and the third magnification; and adjusting the third magnification difference value by the first magnification and the second magnification so that the adjusted first magnification is the same as the third magnification and the adjusted second magnification is the same as the fourth magnification. By determining the third magnification difference value and adjusting the third magnification difference value between the first magnification and the second magnification, the adjusted first magnification is the same as the third magnification, and the adjusted second magnification is the same as the fourth magnification, so that two wafers can be basically aligned during subsequent bonding, and bonding accuracy is further ensured to be higher.
Specifically, after the third rate difference is determined, the person skilled in the art may also adjust the third rate difference by using the third magnification and the fourth magnification so that the adjusted third magnification is the same as the first magnification and the adjusted fourth magnification is the same as the second magnification.
According to another specific embodiment of the present application, the adjusting the first magnification and the second magnification, or the adjusting the third magnification and the fourth magnification such that the first magnification and the third magnification are the same, and such that the second magnification and the fourth magnification are the same, further includes: determining a fourth magnification difference value, wherein the fourth magnification difference value is a difference value between the second magnification and the fourth magnification; and adjusting the fourth magnification difference value to make the adjusted third magnification equal to the first magnification and make the adjusted fourth magnification equal to the second magnification. By determining the fourth magnification difference value and adjusting the fourth magnification difference value between the third magnification and the fourth magnification, the adjusted third magnification is the same as the first magnification, and the adjusted fourth magnification is the same as the second magnification, so that two wafers can be basically aligned during subsequent bonding, and bonding accuracy is further ensured to be higher.
Specifically, after the fourth difference value is determined, the person skilled in the art may also adjust the fourth difference value between the first magnification and the second magnification so that the adjusted first magnification is the same as the third magnification, and so that the adjusted second magnification is the same as the fourth magnification.
Of course, after the third time difference value is determined or the fourth time difference value is determined, the person skilled in the art may also adjust the magnifications of the two wafers at the same time, that is, adjust the first magnification, the second magnification, the third magnification and the fourth magnification, so that the adjusted first magnification is the same as the adjusted third magnification, and so that the adjusted second magnification is the same as the adjusted fourth magnification, which may be flexibly selected by the person skilled in the art according to the actual situation.
In another exemplary embodiment of the present application, a control device for wafer bonding is further provided, and it should be noted that the control device for wafer bonding in the embodiment of the present application may be used to execute the control method for wafer bonding provided in the embodiment of the present application. The following describes a control device for wafer bonding provided by an embodiment of the present application.
Fig. 4 is a schematic diagram of a control apparatus for wafer bonding according to an embodiment of the present application. As shown in fig. 4, the apparatus includes a first adjusting unit 10, a second adjusting unit 20, and a control unit 30, where the first adjusting unit 10 is configured to adjust a first magnification difference value of a first wafer and/or a second magnification difference value of a second wafer so that the first magnification difference value is the same as the second magnification difference value, where the first magnification difference value is a difference value between a first magnification of a first exposure area in a first direction and a second magnification of the first exposure area in a second direction, the first direction is perpendicular to the second direction, the first direction and the second direction are perpendicular to a thickness direction of the first wafer, the first wafer includes a plurality of the first exposure areas, the second magnification difference value is a difference value between a third magnification of the second exposure area in the first direction and a fourth magnification of the second exposure area in the second direction, and the second wafer includes a plurality of the second exposure areas; the second adjusting unit 20 is configured to adjust the first magnification and the second magnification, or adjust the third magnification and the fourth magnification such that the first magnification is the same as the third magnification and the second magnification is the same as the fourth magnification; the control unit 30 is configured to control bonding of the first wafer and the second wafer after the adjustment of the first magnification and the second magnification or the adjustment of the third magnification and the fourth magnification.
According to the wafer bonding control device, the first magnification difference value of the first wafer and/or the second magnification difference value of the second wafer are adjusted through the first adjusting unit, so that the first magnification difference value is the same as the second magnification difference value, the same magnification difference value of the exposure areas of the two wafers after adjustment is ensured, and the magnification difference value is the difference value of the magnification of the exposure areas in the first direction and the second direction; the first amplification factor and the second amplification factor are adjusted through the second adjusting unit, or the third amplification factor and the fourth amplification factor are adjusted, so that the first amplification factor and the third amplification factor are the same, the second amplification factor and the fourth amplification factor are the same, the widths of the adjusted exposure areas of the two wafers in the first direction are the same, the widths of the adjusted exposure areas of the two wafers in the second direction are the same, and the subsequent bonding can be basically aligned; and after the first magnification and the second magnification are adjusted or the third magnification and the fourth magnification are adjusted, the first wafer and the second wafer are controlled to be bonded by the control unit. Compared with the prior art, the device adjusts the first magnification and the second magnification or adjusts the third magnification and the fourth magnification just before bonding, and the device adjusts the first magnification and the second magnification twice, and/or adjusts the third magnification and the fourth magnification by the same value, and adjusts the first magnification difference and/or the second magnification difference before so that the first magnification difference and the second magnification difference are the same, thereby realizing accurate compensation of expansion coefficients of wafers, further ensuring good alignment precision of the two wafers, and further avoiding the influence of low bonding alignment precision on the subsequent process and the influence of production yield.
According to a specific embodiment of the present application, the first adjustment unit includes a first determining module, a second determining module, and a first adjustment module, where the first determining module is configured to determine a first magnification difference of a first wafer; the second determining module is used for determining a second multiplying power difference value of a second wafer; the first adjusting module is configured to adjust the size of the second exposure area, so that the adjusted second magnification difference value is the same as the first magnification difference value. The third amplification factor and the fourth amplification factor of the second exposure area are adjusted by adjusting the size of the second exposure area, so that the adjusted second amplification factor difference value is the same as the first amplification factor difference value, further one-time compensation of the amplification factors of the two wafers in the first direction and the second direction is realized, the same numerical value is conveniently adjusted to the first amplification factor and the second amplification factor in the subsequent step, and/or the same numerical value is adjusted to the third amplification factor and the fourth amplification factor, further the amplification factor of the wafers, namely the accurate compensation of the expansion coefficient is further realized, and further the bonding alignment precision of the two wafers is ensured to be higher.
Specifically, in order to further ensure accurate compensation of the magnification in the first direction and the second direction of the two wafers, after determining the first magnification difference of the first wafer and determining the second magnification difference of the second wafer, the skilled person may also adjust the size of the first exposure area so that the adjusted first magnification difference is the same as the second magnification difference. Of course, after determining the first magnification difference of the first wafer and determining the second magnification difference of the second wafer, a person skilled in the art may also adjust the size of the first exposure area and the size of the second exposure area so that the adjusted first magnification difference is the same as the adjusted second magnification difference. The person skilled in the art can determine the wafers to be adjusted according to the actual situation.
According to another specific embodiment of the present application, the first adjustment module includes a first difference making sub-module, a determining sub-module, and an adjustment sub-module, where the first difference making sub-module is configured to make a difference between the first magnification difference and the second magnification difference to obtain a sub-magnification difference; the determining submodule is used for determining an adjustment value of the size of the second exposure area according to the difference value of the multiplying power; the adjusting sub-module is configured to adjust a width of the second exposure area in the first direction and/or a width of the second exposure area in the second direction according to the adjustment value, so that the adjusted second magnification difference is the same as the first magnification difference. The device obtains a sub-magnification difference value by making a difference between the first magnification difference value and the second magnification difference value, determines an adjustment value of the size of the second exposure area according to the sub-magnification difference value, and finally adjusts the width of the second exposure area in the first direction and/or the width of the second exposure area in the second direction according to the adjustment value, so that the adjusted second magnification difference value is the same as the first magnification difference value, one-time compensation of the magnifications of the two wafers in the first direction and the second direction is further realized, the same value of the first magnification and the second magnification is conveniently adjusted subsequently, and/or the same value of the third magnification and the fourth magnification is adjusted subsequently, the magnification of the wafers, namely the accurate compensation of the expansion coefficient is further realized, and the alignment precision of the bonding of the two wafers is further ensured to be higher.
Of course, after the first magnification difference is different from the second magnification difference to obtain a sub-magnification difference, a person skilled in the art may determine an adjustment value of the size of the first exposure area according to the sub-magnification difference, and adjust the width of the first exposure area in the first direction and/or the width of the first exposure area in the second direction according to the adjustment value, so that the adjusted first magnification difference is the same as the second magnification difference.
In an actual application process, the first determining module includes a first obtaining sub-module, a second obtaining sub-module and a second differentiating sub-module, where the first obtaining sub-module is configured to obtain the first magnification according to a ratio of an actual width value and a design value of the first exposure area in the first direction; the second obtaining submodule is used for obtaining the second magnification according to the ratio of the actual width value to the design value of the first exposure area in the second direction; the second difference making sub-module is used for making difference between the first magnification and the second magnification to obtain the first magnification difference.
In an actual application process, the second determining module includes a third obtaining sub-module, a fourth obtaining sub-module and a third difference sub-module, where the third obtaining sub-module is configured to obtain the third magnification according to a ratio of an actual width value and a design value of the second exposure area in the first direction; the fourth obtaining submodule is used for obtaining the fourth magnification according to the ratio of the actual width value of the second exposure area to the design value in the second direction; the third difference making sub-module is used for making difference between the third magnification and the fourth magnification to obtain the second magnification difference.
In a specific embodiment, the first magnification difference and/or the second magnification difference of the first wafer and/or the second wafer are/is adjusted so that the first magnification difference and the second magnification difference are the same, so as to obtain a schematic diagram of two wafers to be bonded as shown in fig. 3, where the first wafer is a CMOS wafer, the second wafer is an Array wafer, the first direction is an X direction, the second direction is a Y direction, the first magnification difference Δ1=x1-Y1, the second magnification difference Δ2=x2-Y2, and the first magnification difference is the same as the second magnification difference.
According to still another specific embodiment of the present application, the second adjusting unit includes a third determining module and a second adjusting module, where the third determining module is configured to determine a third rate difference, and the third rate difference is a difference between the first magnification and the third magnification; the second adjustment module is configured to adjust the first magnification and the second magnification by the third magnification difference value, so that the adjusted first magnification is the same as the third magnification, and the adjusted second magnification is the same as the fourth magnification. By determining the third magnification difference value and adjusting the third magnification difference value between the first magnification and the second magnification, the adjusted first magnification is the same as the third magnification, and the adjusted second magnification is the same as the fourth magnification, so that two wafers can be basically aligned during subsequent bonding, and bonding accuracy is further ensured to be higher.
Specifically, after the third rate difference is determined, the person skilled in the art may also adjust the third rate difference by using the third magnification and the fourth magnification so that the adjusted third magnification is the same as the first magnification and the adjusted fourth magnification is the same as the second magnification.
According to another specific embodiment of the present application, the second adjusting unit further includes a fourth determining module and a third adjusting module, where the fourth determining module is configured to determine a fourth magnification difference value, and the fourth magnification difference value is a difference value between the second magnification and the fourth magnification; the third adjustment module is configured to adjust the third magnification and the fourth magnification by the fourth magnification difference value, so that the adjusted third magnification is the same as the first magnification, and the adjusted fourth magnification is the same as the second magnification. By determining the fourth magnification difference value and adjusting the fourth magnification difference value between the third magnification and the fourth magnification, the adjusted third magnification is the same as the first magnification, and the adjusted fourth magnification is the same as the second magnification, so that two wafers can be basically aligned during subsequent bonding, and bonding accuracy is further ensured to be higher.
Specifically, after the fourth difference value is determined, the person skilled in the art may also adjust the fourth difference value between the first magnification and the second magnification so that the adjusted first magnification is the same as the third magnification, and so that the adjusted second magnification is the same as the fourth magnification.
Of course, after the third time difference value is determined or the fourth time difference value is determined, the person skilled in the art may also adjust the magnifications of the two wafers at the same time, that is, adjust the first magnification, the second magnification, the third magnification and the fourth magnification, so that the adjusted first magnification is the same as the adjusted third magnification, and so that the adjusted second magnification is the same as the adjusted fourth magnification, which may be flexibly selected by the person skilled in the art according to the actual situation.
The control device for wafer bonding comprises a processor and a memory, wherein the first adjusting unit, the second adjusting unit, the control unit and the like are stored in the memory as program units, and the processor executes the program units stored in the memory to realize corresponding functions.
The processor includes a kernel, and the kernel fetches the corresponding program unit from the memory. The inner core can be provided with one or more than one, and the problem that the expansion coefficients of the wafer in the X and Y directions cannot be accurately compensated in the prior art is solved by adjusting the parameters of the inner core.
The memory may include volatile memory, random Access Memory (RAM), and/or nonvolatile memory, such as Read Only Memory (ROM) or flash memory (flash RAM), among other forms in computer readable media, the memory including at least one memory chip.
The embodiment of the invention provides a storage medium, on which a program is stored, which when executed by a processor, implements the above-described wafer bonding control method.
The embodiment of the invention provides a processor, which is used for running a program, wherein the control method for bonding wafers is executed when the program runs.
The embodiment of the invention provides equipment, which comprises a processor, a memory and a program stored in the memory and capable of running on the processor, wherein the processor realizes at least the following steps when executing the program:
step S101, adjusting a first magnification difference value of a first wafer and/or a second magnification difference value of a second wafer so that the first magnification difference value is the same as the second magnification difference value, wherein the first magnification difference value is a difference value between a first magnification of a first exposure area in a first direction and a second magnification of the first exposure area in a second direction, the first direction is perpendicular to the second direction, the first direction and the second direction are perpendicular to a thickness direction of the first wafer, the first wafer comprises a plurality of first exposure areas, the second magnification difference value is a difference value between a third magnification of the second exposure area in the first direction and a fourth magnification of the second exposure area in the second direction, and the second wafer comprises a plurality of second exposure areas;
Step S102, adjusting the first magnification and the second magnification, or adjusting the third magnification and the fourth magnification so that the first magnification is the same as the third magnification and the second magnification is the same as the fourth magnification;
and step S103, after the first magnification and the second magnification are adjusted or the third magnification and the fourth magnification are adjusted, the first wafer and the second wafer are controlled to be bonded.
The device herein may be a server, PC, PAD, cell phone, etc.
The application also provides a computer program product adapted to perform, when executed on a data processing device, a program initialized with at least the following method steps:
step S101, adjusting a first magnification difference value of a first wafer and/or a second magnification difference value of a second wafer so that the first magnification difference value is the same as the second magnification difference value, wherein the first magnification difference value is a difference value between a first magnification of a first exposure area in a first direction and a second magnification of the first exposure area in a second direction, the first direction is perpendicular to the second direction, the first direction and the second direction are perpendicular to a thickness direction of the first wafer, the first wafer comprises a plurality of first exposure areas, the second magnification difference value is a difference value between a third magnification of the second exposure area in the first direction and a fourth magnification of the second exposure area in the second direction, and the second wafer comprises a plurality of second exposure areas;
Step S102, adjusting the first magnification and the second magnification, or adjusting the third magnification and the fourth magnification so that the first magnification is the same as the third magnification and the second magnification is the same as the fourth magnification;
and step S103, after the first magnification and the second magnification are adjusted or the third magnification and the fourth magnification are adjusted, the first wafer and the second wafer are controlled to be bonded.
In the foregoing embodiments of the present application, the descriptions of the embodiments are emphasized, and for a portion of this disclosure that is not described in detail in this embodiment, reference is made to the related descriptions of other embodiments.
In the several embodiments provided in the present application, it should be understood that the disclosed technology may be implemented in other manners. The above-described embodiments of the apparatus are merely exemplary, and the division of the units may be a logic function division, and there may be another division manner when actually implemented, for example, a plurality of units or components may be combined or may be integrated into another system, or some features may be omitted or not performed. Alternatively, the coupling or direct coupling or communication connection shown or discussed with each other may be through some interfaces, units or modules, or may be in electrical or other forms.
The units described above as separate components may or may not be physically separate, and components shown as units may or may not be physical units, may be located in one place, or may be distributed over a plurality of units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.
In addition, each functional unit in the embodiments of the present invention may be integrated in one processing unit, or each unit may exist alone physically, or two or more units may be integrated in one unit. The integrated units may be implemented in hardware or in software functional units.
The integrated units described above, if implemented in the form of software functional units and sold or used as stand-alone products, may be stored in a computer readable storage medium. Based on such understanding, the technical solution of the present invention may be embodied in essence or a part contributing to the prior art or all or part of the technical solution in the form of a software product stored in a storage medium, comprising several instructions for causing a computer device (which may be a personal computer, a server or a network device, etc.) to perform all or part of the steps of the above-mentioned method of the various embodiments of the present invention. And the aforementioned storage medium includes: a U-disk, a Read-Only Memory (ROM), a random access Memory (RAM, random Access Memory), a removable hard disk, a magnetic disk, or an optical disk, or other various media capable of storing program codes.
According to still another exemplary embodiment of the present application, there is further provided a bonding system including a bonding device for a wafer and a control device for bonding the wafer, wherein the control device for bonding the wafer is configured to perform any one of the methods described above.
According to the bonding system, the control method is executed through the control device for bonding the wafers, the amplification factors in the first direction and the second direction of the two wafers, namely, the expansion coefficients, can be accurately compensated, the widths of the adjusted exposure areas of the two wafers in the first direction are identical, the widths of the adjusted exposure areas of the two wafers in the second direction are identical, the good alignment precision of the two wafers is ensured, and further the influence of low alignment precision of bonding on the subsequent process and the influence of the production yield are avoided.
From the above description, it can be seen that the above embodiments of the present application achieve the following technical effects:
1) The application provides a control method for wafer bonding, which comprises the steps of firstly adjusting a first multiplying power difference value of a first wafer and/or a second multiplying power difference value of a second wafer to ensure that the first multiplying power difference value is the same as the second multiplying power difference value, and ensuring that the multiplying power difference values of the exposure areas of the two wafers after adjustment are the same, wherein the multiplying power difference value is the difference value of the multiplying power of the exposure areas in a first direction and a second direction; then adjusting the first magnification and the second magnification, or adjusting the third magnification and the fourth magnification to make the first magnification and the third magnification identical, and make the second magnification and the fourth magnification identical, so as to ensure that the widths of the adjusted exposure areas of the two wafers in the first direction are identical, ensure that the widths of the adjusted exposure areas of the two wafers in the second direction are identical, and facilitate the subsequent bonding to be basically aligned; and finally, after the first magnification and the second magnification are adjusted or the third magnification and the fourth magnification are adjusted, controlling the first wafer and the second wafer to be bonded. Compared with the prior art that the first magnification and the second magnification are adjusted by the same value before bonding, or the third magnification and the fourth magnification are adjusted by the same value, the method not only comprises the steps that the first magnification and the second magnification are adjusted by the same value, and/or the third magnification and the fourth magnification are adjusted by the same value, but also the first magnification difference value and/or the second magnification difference value are adjusted before bonding, so that the first magnification difference value and the second magnification difference value are the same, accurate compensation of expansion coefficients of wafers is realized, the alignment precision of two wafers is better, and the influence of low bonding alignment precision on subsequent processes and the influence of production yield are avoided.
2) The application also provides a control device for wafer bonding, which adjusts the first multiplying power difference value of the first wafer and/or the second multiplying power difference value of the second wafer through the first adjusting unit, so that the first multiplying power difference value is the same as the second multiplying power difference value, and the multiplying power difference value of the adjusted exposure areas of the two wafers is the same, wherein the multiplying power difference value is the difference value of the multiplying power of the exposure areas in the first direction and the second direction; the first amplification factor and the second amplification factor are adjusted through the second adjusting unit, or the third amplification factor and the fourth amplification factor are adjusted, so that the first amplification factor and the third amplification factor are the same, the second amplification factor and the fourth amplification factor are the same, the widths of the adjusted exposure areas of the two wafers in the first direction are the same, the widths of the adjusted exposure areas of the two wafers in the second direction are the same, and the subsequent bonding can be basically aligned; and after the first magnification and the second magnification are adjusted or the third magnification and the fourth magnification are adjusted, the first wafer and the second wafer are controlled to be bonded by the control unit. Compared with the prior art, the device adjusts the first magnification and the second magnification or adjusts the third magnification and the fourth magnification just before bonding, and the device adjusts the first magnification and the second magnification twice, and/or adjusts the third magnification and the fourth magnification by the same value, and adjusts the first magnification difference and/or the second magnification difference before so that the first magnification difference and the second magnification difference are the same, thereby realizing accurate compensation of expansion coefficients of wafers, further ensuring good alignment precision of the two wafers, and further avoiding the influence of low bonding alignment precision on the subsequent process and the influence of production yield.
3) The application also provides a bonding system, the bonding system executes the control method by the control device for bonding the wafers, compared with the prior art, the bonding system adjusts the first amplification factor and the second amplification factor only before bonding, or adjusts the third amplification factor and the fourth amplification factor, the bonding system adjusts the first amplification factor and the second amplification factor twice, and/or adjusts the third amplification factor and the fourth amplification factor by the same value, and adjusts the first amplification factor difference and/or the second amplification factor difference before, so that the first amplification factor difference and the second amplification factor difference are the same, thereby realizing accurate compensation of the expansion coefficient of the wafers, further ensuring that the alignment precision of the two wafers is better, and further avoiding the influence of low bonding alignment precision on the subsequent process and the influence of the production yield.
The above description is only of the preferred embodiments of the present application and is not intended to limit the present application, but various modifications and variations can be made to the present application by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the protection scope of the present application.
Claims (10)
1. A method for controlling wafer bonding, comprising:
adjusting a first magnification difference value of a first wafer and/or a second magnification difference value of a second wafer, so that the first magnification difference value is the same as the second magnification difference value, wherein the first magnification difference value is a difference value between a first magnification of a first exposure area in a first direction and a second magnification of the first exposure area in a second direction, the first direction is perpendicular to the second direction, the first direction and the second direction are perpendicular to a thickness direction of the first wafer, the first wafer comprises a plurality of first exposure areas, the second magnification difference value is a difference value between a third magnification of the second exposure area in the first direction and a fourth magnification of the second exposure area in the second direction, and the second wafer comprises a plurality of second exposure areas;
adjusting the first magnification and the second magnification, or adjusting the third magnification and the fourth magnification such that the first magnification and the third magnification are the same, and such that the second magnification and the fourth magnification are the same;
and after the first magnification and the second magnification are adjusted or the third magnification and the fourth magnification are adjusted, controlling the first wafer and the second wafer to be bonded.
2. The method of claim 1, wherein adjusting the first magnification difference for the first wafer and/or the second magnification difference for the second wafer such that the first magnification difference and the second magnification difference are the same comprises:
determining a first multiplying power difference value of a first wafer;
determining a second multiplying power difference value of a second wafer;
adjusting the size of the second exposure area so that the adjusted second magnification difference value is the same as the first magnification difference value, or
Adjusting the size of the first exposure area so that the adjusted first magnification difference and the second magnification difference are the same, or
And adjusting the size of the first exposure area and the size of the second exposure area so that the adjusted first multiplying power difference value is the same as the adjusted second multiplying power difference value.
3. The method of claim 1, wherein adjusting the size of the second exposure area such that the adjusted second magnification difference is the same as the first magnification difference comprises:
the first multiplying power difference value and the second multiplying power difference value are subjected to difference to obtain a sub multiplying power difference value;
determining an adjustment value of the size of the second exposure area according to the sub-multiplying power difference value;
And adjusting the width of the second exposure area in the first direction and/or the width of the second exposure area in the second direction according to the adjustment value, so that the adjusted second multiplying power difference value is the same as the first multiplying power difference value.
4. The method of claim 1, wherein determining a first magnification difference for the first wafer comprises:
obtaining the first magnification according to the ratio of the actual width value and the design value of the first exposure area in the first direction;
obtaining the second magnification according to the ratio of the actual width value and the design value of the first exposure area in the second direction;
and performing difference between the first magnification and the second magnification to obtain the first magnification difference.
5. The method of claim 1, wherein determining a second magnification difference for the second wafer comprises:
obtaining the third magnification according to the ratio of the actual width value of the second exposure area in the first direction to the design value;
obtaining the fourth magnification according to the ratio of the actual width value and the design value of the second exposure area in the second direction;
And performing difference between the third magnification and the fourth magnification to obtain the second magnification difference.
6. The method of claim 1, wherein adjusting the first and second magnifications, or adjusting the third and fourth magnifications such that the first and third magnifications are the same and such that the second and fourth magnifications are the same, comprises:
determining a third magnification difference value, wherein the third magnification difference value is the difference value between the first magnification and the third magnification;
and adjusting the third magnification difference value by the first magnification and the second magnification so that the adjusted first magnification is the same as the third magnification and the adjusted second magnification is the same as the fourth magnification.
7. A wafer bonding control apparatus, comprising:
the first adjusting unit is used for adjusting a first magnification difference value of a first wafer and/or a second magnification difference value of a second wafer so that the first magnification difference value is the same as the second magnification difference value, wherein the first magnification difference value is a difference value between a first magnification of a first exposure area in a first direction and a second magnification of the first exposure area in a second direction, the first direction is perpendicular to the second direction, the first direction and the second direction are perpendicular to the thickness direction of the first wafer respectively, the first wafer comprises a plurality of first exposure areas, the second magnification difference value is a difference value between a third magnification of the second exposure area in the first direction and a fourth magnification of the second exposure area in the second direction, and the second wafer comprises a plurality of second exposure areas;
A second adjustment unit configured to adjust the first magnification and the second magnification, or adjust the third magnification and the fourth magnification so that the first magnification and the third magnification are the same, and so that the second magnification and the fourth magnification are the same;
and the control unit is used for controlling the first wafer and the second wafer to be bonded after the first magnification and the second magnification are adjusted or the third magnification and the fourth magnification are adjusted.
8. A computer-readable storage medium, characterized in that the storage medium comprises a stored program, wherein the program performs the method of any one of claims 1 to 6.
9. A processor for running a program, wherein the program when run performs the method of any one of claims 1 to 6.
10. A bonding system comprising bonding means for wafers and control means for wafer bonding, wherein the control means for wafer bonding is adapted to perform the method of any one of claims 1 to 6.
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| CN202011272923.4A CN112382578B (en) | 2020-11-13 | 2020-11-13 | Wafer bonding control method, control device, processor and bonding system |
| CN202311125875.XA CN117410189A (en) | 2020-11-13 | 2020-11-13 | Wafer bonding control method, control device, processor and bonding system |
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| CN112382578A (en) | 2021-02-19 |
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