CN112382578A - Control method and control device for wafer bonding, processor and bonding system - Google Patents
Control method and control device for wafer bonding, processor and bonding system Download PDFInfo
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- 235000012431 wafers Nutrition 0.000 description 205
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- 238000004519 manufacturing process Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
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- 238000005859 coupling reaction Methods 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
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- 230000000295 complement effect Effects 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
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- 229910044991 metal oxide Inorganic materials 0.000 description 1
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- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
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- H01L2224/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
- H01L2224/8212—Aligning
- H01L2224/82121—Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors
Abstract
The application provides a control method, a control device, a processor and a bonding system for wafer bonding, wherein the method comprises the following steps: adjusting a first magnification difference value of the first wafer and/or a second magnification difference value of the second wafer to enable the first magnification difference value and the second magnification difference value to be the same, wherein the first magnification difference value is a difference value between a first magnification of the first exposure area in the first direction and a second magnification of the first exposure area in the second direction, and the second magnification difference value is a difference value between a third magnification of the second exposure area in the first direction and a fourth magnification of the second exposure area in the second direction; adjusting the first magnification and the second magnification, or adjusting the third magnification and the fourth magnification, so that the first magnification and the third magnification are the same, and the second magnification and the fourth magnification are the same; after the adjustment, controlling to bond the first wafer and the second wafer. The method can accurately compensate the expansion coefficients of the wafer in the X direction and the Y direction.
Description
Technical Field
The present application relates to the field of semiconductors, and in particular, to a method for controlling wafer bonding, a control apparatus, a computer-readable storage medium, a processor, and a bonding system.
Background
In an X-stacking (X-stacking) framework of an existing three-dimensional flash memory (3D NAND flash memory, for short), the alignment precision of Bonding (Bonding) has a great influence on the production yield, and particularly, the yield influence of an exposure area (shot) in the edge area of a wafer directly determines the effective wafer chip (wafer die chip) range of the X-stacking framework. In the X-stacking structure, the degree of expansion matching between the upper and lower wafers and in the X and Y directions directly affects the alignment accuracy of the bonding, as shown in fig. 1, the degrees of expansion in the X and Y directions of the CMOS (Complementary Metal Oxide Semiconductor) wafer and the Array wafer are not consistent, so that the subsequent bonding process adjusts the expansion coefficients in the X and Y directions in an equal proportion, and the two wafers of the CMOS wafer and the Array wafer cannot be aligned. Therefore, a method is needed to precisely compensate the expansion coefficients of the wafer in the X and Y directions, so as to ensure the alignment precision of the subsequent bonding.
The above information disclosed in this background section is only for enhancement of understanding of the background of the technology described herein and, therefore, certain information may be included in the background that does not form the prior art that is already known in this country to a person of ordinary skill in the art.
Disclosure of Invention
The present application mainly aims to provide a wafer bonding control method, a wafer bonding control device, a computer-readable storage medium, a wafer bonding processor, and a wafer bonding system, so as to solve the problem that the expansion coefficients of the wafer in the X and Y directions cannot be accurately compensated in the prior art.
According to an aspect of an embodiment of the present application, there is provided a method for controlling wafer bonding, including: adjusting a first magnification difference value of a first wafer and/or a second magnification difference value of a second wafer to enable the first magnification difference value and the second magnification difference value to be the same, wherein the first magnification difference value is a difference value between a first magnification of a first exposure area in a first direction and a second magnification of the first exposure area in a second direction, the first direction is perpendicular to the second direction, the first direction and the second direction are respectively perpendicular to the thickness direction of the first wafer, the first wafer comprises a plurality of first exposure areas, the second magnification difference value is a difference value between a third magnification of the second exposure area in the first direction and a fourth magnification of the second exposure area in the second direction, and the second wafer comprises a plurality of second exposure areas; adjusting the first magnification and the second magnification, or adjusting the third magnification and the fourth magnification, so that the first magnification and the third magnification are the same, and the second magnification and the fourth magnification are the same; and after the first magnification ratio and the second magnification ratio are adjusted, or the third magnification ratio and the fourth magnification ratio are adjusted, controlling to bond the first wafer and the second wafer.
Optionally, adjusting a first magnification difference of a first wafer and/or a second magnification difference of a second wafer so that the first magnification difference and the second magnification difference are the same includes: determining a first magnification difference value of a first wafer; determining a second magnification difference value of a second wafer; and adjusting the size of the second exposure area to ensure that the adjusted second magnification difference value is the same as the first magnification difference value.
Optionally, adjusting the size of the second exposure area so that the adjusted second magnification difference is the same as the first magnification difference, includes: subtracting the first multiplying power difference value from the second multiplying power difference value to obtain a sub-multiplying power difference value; determining an adjustment value of the size of the second exposure area according to the sub-magnification difference; and adjusting the width of the second exposure area in the first direction and/or the width of the second exposure area in the second direction according to the adjustment value, so that the adjusted second magnification difference is the same as the first magnification difference.
Optionally, determining a first magnification difference of the first wafer includes: obtaining the first magnification according to the ratio of the actual width value of the first exposure area in the first direction to the design value; obtaining the second magnification according to the ratio of the actual width value of the first exposure area in the second direction to the design value; and obtaining the difference value of the first magnification by differentiating the first magnification and the second magnification.
Optionally, determining a second magnification difference of the second wafer includes: obtaining the third magnification according to the ratio of the actual width value of the second exposure area in the first direction to the design value; obtaining the fourth magnification according to the ratio of the actual width value of the second exposure area in the second direction to the design value; and subtracting the third magnification ratio and the fourth magnification ratio to obtain the second magnification ratio difference value.
Optionally, adjusting the first magnification and the second magnification, or adjusting the third magnification and the fourth magnification such that the first magnification and the third magnification are the same, and such that the second magnification and the fourth magnification are the same, includes: determining a third magnification difference, the third magnification difference being a difference between the first magnification and the third magnification; and adjusting the first magnification and the second magnification by the third magnification difference value, so that the adjusted first magnification is the same as the third magnification, and the adjusted second magnification is the same as the fourth magnification.
According to another aspect of the embodiments of the present application, there is further provided a control apparatus for wafer bonding, including a first adjusting unit, a second adjusting unit and a control unit, wherein the first adjusting unit is configured to adjust a first magnification difference of a first wafer and/or a second magnification difference of a second wafer, so that the first magnification difference and the second magnification difference are the same, where the first magnification difference is a difference between a first magnification of a first exposure area in a first direction and a second magnification of the first exposure area in a second direction, the first direction is perpendicular to the second direction, the first direction and the second direction are perpendicular to a thickness direction of the first wafer, respectively, the first wafer includes a plurality of the first exposure areas, and the second magnification difference is a difference between a third magnification of the second exposure area in the first direction and a fourth magnification of the second exposure area in the second direction, the second wafer includes a plurality of the second exposure regions; the second adjusting unit is configured to adjust the first magnification and the second magnification, or adjust the third magnification and the fourth magnification, so that the first magnification and the third magnification are the same, and the second magnification and the fourth magnification are the same; the control unit is used for controlling the bonding of the first wafer and the second wafer after the first magnification and the second magnification are adjusted, or the third magnification and the fourth magnification are adjusted.
According to still another aspect of embodiments of the present application, there is also provided a computer-readable storage medium including a stored program, wherein the program executes any one of the methods.
According to yet another aspect of the embodiments of the present application, there is also provided a processor for executing a program, where the program executes to perform any one of the methods.
According to another aspect of the embodiments of the present application, there is also provided a bonding system, including a wafer bonding apparatus and a wafer bonding control apparatus, wherein the wafer bonding control apparatus is configured to perform any one of the methods.
The application provides a control method of wafer bonding, which comprises the steps of firstly adjusting a first magnification difference value of a first wafer and/or a second magnification difference value of a second wafer to enable the first magnification difference value and the second magnification difference value to be the same, ensuring that the magnification difference values of exposure areas of two adjusted wafers are the same, wherein the magnification difference values are the difference values of the magnifications of the exposure areas in a first direction and a second direction; then adjusting the first magnification ratio and the second magnification ratio, or adjusting the third magnification ratio and the fourth magnification ratio, so that the first magnification ratio and the third magnification ratio are the same, and the second magnification ratio and the fourth magnification ratio are the same, thereby ensuring that the widths of the exposure areas of the two adjusted wafers in the first direction are the same, ensuring that the widths of the exposure areas of the two adjusted wafers in the second direction are the same, and facilitating the basic alignment of subsequent bonding; and finally, after the first magnification ratio and the second magnification ratio are adjusted, or the third magnification ratio and the fourth magnification ratio are adjusted, controlling the first wafer and the second wafer to be bonded. Compared with the prior art that the first magnification ratio and the second magnification ratio are adjusted by the same numerical value before bonding or the third magnification ratio and the fourth magnification ratio are adjusted by the same numerical value before bonding, the method carries out two times of adjustment, and comprises the steps of adjusting the first magnification ratio and the second magnification ratio by the same numerical value and/or adjusting the third magnification ratio and the fourth magnification ratio by the same numerical value, and adjusting the first magnification ratio difference value and/or the second magnification ratio difference value before so that the first magnification ratio difference value and the second magnification ratio difference value are the same, thereby realizing accurate compensation of the expansion coefficient of the wafer, further ensuring that the alignment accuracy of two wafers is better, and further avoiding the influence of low bonding alignment accuracy on the subsequent process and the influence of production yield.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this application, illustrate embodiments of the application and, together with the description, serve to explain the application and are not intended to limit the application. In the drawings:
fig. 1 shows a schematic flow chart generated by a control method for wafer bonding according to an embodiment of the present application;
fig. 2 shows a schematic flow chart generated by a control method for wafer bonding according to an embodiment of the present application;
FIG. 3 shows a schematic view of two wafers to be bonded according to an embodiment of the present application; and
fig. 4 shows a schematic diagram of a control apparatus for wafer bonding according to an embodiment of the present application.
Wherein the figures include the following reference numerals:
10. a first adjusting unit; 20. a second adjusting unit; 30. a control unit.
Detailed Description
It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict. The present application will be described in detail below with reference to the embodiments with reference to the attached drawings.
In order to make the technical solutions better understood by those skilled in the art, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only partial embodiments of the present application, but not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
It should be noted that the terms "first," "second," and the like in the description and claims of this application and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It should be understood that the data so used may be interchanged under appropriate circumstances such that embodiments of the application described herein may be used. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" another element, it can be directly on the other element or intervening elements may also be present. Also, in the specification and claims, when an element is described as being "connected" to another element, the element may be "directly connected" to the other element or "connected" to the other element through a third element.
For convenience of description, some terms or expressions referred to in the embodiments of the present application are explained below:
magnification: and the ratio of the actual width value of the exposure area of the wafer to the design value comprises the magnification of the exposure area in the X direction and the magnification in the Y direction.
As mentioned in the background art, the expansion coefficients of the wafer in the X and Y directions cannot be precisely compensated in the prior art, and in order to solve the above problems, the present application provides a wafer bonding control method, a wafer bonding control apparatus, a computer-readable storage medium, a wafer bonding processor, and a wafer bonding system.
According to an exemplary embodiment of the present application, a method for controlling wafer bonding is provided.
Fig. 2 is a flowchart of a method for controlling wafer bonding according to an embodiment of the present application. As shown in fig. 2, the method comprises the steps of:
step S101, adjusting a first magnification difference of a first wafer and/or a second magnification difference of a second wafer to enable the first magnification difference and the second magnification difference to be the same, wherein the first magnification difference is a difference between a first magnification of a first exposure area in a first direction and a second magnification of the first exposure area in a second direction, the first direction is perpendicular to the second direction, the first direction and the second direction are perpendicular to a thickness direction of the first wafer, the first wafer comprises a plurality of first exposure areas, the second magnification difference is a difference between a third magnification of the second exposure area in the first direction and a fourth magnification of the second exposure area in the second direction, and the second wafer comprises a plurality of second exposure areas;
step S102 of adjusting the first magnification and the second magnification, or adjusting the third magnification and the fourth magnification so that the first magnification and the third magnification are the same, and the second magnification and the fourth magnification are the same;
step S103 is performed to control bonding of the first wafer and the second wafer after the first magnification and the second magnification are adjusted, or the third magnification and the fourth magnification are adjusted.
Firstly, adjusting a first magnification difference value of a first wafer and/or a second magnification difference value of a second wafer to enable the first magnification difference value and the second magnification difference value to be the same, and ensuring that the magnification difference values of exposure areas of two adjusted wafers are the same, wherein the magnification difference values are the difference values of the magnifications of the exposure areas in a first direction and a second direction; then, adjusting the first magnification ratio and the second magnification ratio, or adjusting the third magnification ratio and the fourth magnification ratio, so that the first magnification ratio and the third magnification ratio are the same, and the second magnification ratio and the fourth magnification ratio are the same, thereby ensuring that the widths of the exposure areas of the two adjusted wafers in the first direction are the same, ensuring that the widths of the exposure areas of the two adjusted wafers in the second direction are the same, and facilitating the basic alignment of subsequent bonding; finally, after the first magnification and the second magnification are adjusted, or the third magnification and the fourth magnification are adjusted, the first wafer and the second wafer are controlled to be bonded. Compared with the prior art that the first magnification ratio and the second magnification ratio are adjusted by the same numerical value before bonding or the third magnification ratio and the fourth magnification ratio are adjusted by the same numerical value before bonding, the method carries out adjustment twice, and comprises the steps of adjusting the first magnification ratio and the second magnification ratio by the same numerical value and/or adjusting the third magnification ratio and the fourth magnification ratio by the same numerical value, and adjusting the first magnification ratio difference value and/or the second magnification ratio difference value before so that the first magnification ratio difference value and the second magnification ratio difference value are the same, thereby realizing accurate compensation of the expansion coefficient of the wafer, further ensuring that the alignment precision of two wafers is better, and further avoiding the influence of low bonding alignment precision on the subsequent process and the influence of production yield.
It should be noted that one wafer includes a plurality of exposure regions, and the magnification of each exposure region of the wafer obtained after the photolithography exposure in the first direction is the same, and the magnification of each exposure region in the second direction is the same.
It should be noted that the steps illustrated in the flowcharts of the figures may be performed in a computer system such as a set of computer-executable instructions and that, although a logical order is illustrated in the flowcharts, in some cases, the steps illustrated or described may be performed in an order different than presented herein.
According to a specific embodiment of the present application, adjusting a first magnification difference of a first wafer and/or a second magnification difference of a second wafer so that the first magnification difference is the same as the second magnification difference comprises: determining a first magnification difference value of a first wafer; determining a second magnification difference value of a second wafer; and adjusting the size of the second exposure area to ensure that the adjusted second magnification difference is the same as the first magnification difference. The third magnification and the fourth magnification of the second exposure area are adjusted by adjusting the size of the second exposure area, so that the adjusted difference value of the second magnification is the same as the difference value of the first magnification, further primary compensation of the magnification of the two wafers in the first direction and the second direction is realized, the same numerical value of the first magnification and the second magnification is conveniently adjusted subsequently, and/or the same numerical value of the third magnification and the fourth magnification is adjusted, further the magnification of the wafer, namely the precise compensation of the expansion coefficient is realized, and further the high alignment precision of the bonding of the two wafers is ensured.
Specifically, in order to further ensure accurate compensation of the magnification of the two wafers in the first direction and the second direction, after determining the first magnification difference of the first wafer and determining the second magnification difference of the second wafer, a person skilled in the art may further adjust the size of the first exposure area so that the adjusted first magnification difference and the adjusted second magnification difference are the same. Of course, after determining the first magnification difference of the first wafer and the second magnification difference of the second wafer, a person skilled in the art may also adjust the size of the first exposure region and the size of the second exposure region, so that the adjusted first magnification difference is the same as the adjusted second magnification difference. The skilled person can determine the wafer to be adjusted according to the actual situation.
According to another specific embodiment of the present application, adjusting the size of the second exposure area so that the adjusted second magnification difference is the same as the first magnification difference includes: subtracting the first multiplying power difference value from the second multiplying power difference value to obtain a sub-multiplying power difference value; determining an adjustment value of the size of the second exposure area according to the sub-magnification difference; and adjusting the width of the second exposure area in the first direction and/or the width of the second exposure area in the second direction according to the adjustment value, so that the adjusted second magnification difference is the same as the adjusted first magnification difference. The method comprises the steps of obtaining a sub-magnification difference value by subtracting the first magnification difference value from the second magnification difference value, determining an adjustment value of the size of the second exposure region according to the sub-magnification difference value, and finally adjusting the width of the second exposure region in the first direction and/or the width of the second exposure region in the second direction according to the adjustment value so that the adjusted second magnification difference value is the same as the adjusted first magnification difference value, thereby further realizing one-time compensation of the magnifications of the two wafers in the first direction and the second direction, facilitating subsequent adjustment of the same numerical value of the first magnification and the second magnification, and/or adjusting the same numerical value of the third magnification and the fourth magnification, and further realizing accurate compensation of the magnification, namely the expansion coefficient, of the wafer, thereby ensuring that the alignment precision of the bonding of the two wafers is higher.
Of course, after obtaining the sub-magnification difference by subtracting the first magnification difference from the second magnification difference, a person skilled in the art may also determine an adjustment value of the size of the first exposure region according to the sub-magnification difference, and adjust the width of the first exposure region in the first direction and/or the width of the first exposure region in the second direction according to the adjustment value, so that the adjusted first magnification difference is the same as the adjusted second magnification difference.
In an actual application process, determining a first magnification difference of a first wafer includes: obtaining the first magnification according to the ratio of the actual width value of the first exposure area in the first direction to the design value; obtaining the second magnification according to the ratio of the actual width value of the first exposure area in the second direction to the design value; and obtaining the first magnification difference value by differentiating the first magnification and the second magnification.
In an actual application process, determining a second magnification difference of the second wafer includes: obtaining the third magnification according to the ratio of the actual width value of the second exposure area in the first direction to the design value; obtaining the fourth magnification according to the ratio of the actual width value of the second exposure area in the second direction to the design value; and subtracting the third magnification from the fourth magnification to obtain the second magnification difference.
In a specific embodiment, the schematic diagram of two wafers to be bonded shown in fig. 3 is obtained by adjusting a first magnification difference of a first wafer and/or a second magnification difference of a second wafer so that the first magnification difference and the second magnification difference are the same, where the first wafer is a CMOS wafer, the second wafer is an Array wafer, the first direction is an X direction, the second direction is a Y direction, the first magnification difference Δ 1 is X1-Y1, the second magnification difference Δ 2 is X2-Y2, and the first magnification difference is the same as the second magnification difference.
According to another specific embodiment of the present application, adjusting the first magnification and the second magnification, or adjusting the third magnification and the fourth magnification such that the first magnification and the third magnification are the same and the second magnification and the fourth magnification are the same includes: determining a third magnification difference, wherein the third magnification difference is a difference between the first magnification and the third magnification; the third magnification difference is adjusted for both the first magnification and the second magnification such that the adjusted first magnification is the same as the third magnification and the adjusted second magnification is the same as the fourth magnification. By determining the third magnification difference and adjusting both the first magnification and the second magnification by the third magnification difference, the adjusted first magnification is the same as the third magnification, and the adjusted second magnification is the same as the fourth magnification, so that the two wafers can be basically aligned during subsequent bonding, and the bonding precision is further ensured to be high.
Specifically, after the third magnification difference is determined, a person skilled in the art may adjust both the third magnification and the fourth magnification by the third magnification difference such that the adjusted third magnification is the same as the first magnification and the adjusted fourth magnification is the same as the second magnification.
According to another specific embodiment of the present application, adjusting the first magnification and the second magnification, or adjusting the third magnification and the fourth magnification such that the first magnification and the third magnification are the same and the second magnification and the fourth magnification are the same further comprises: determining a fourth magnification difference, the fourth magnification difference being a difference between the second magnification and the fourth magnification; the fourth magnification is adjusted by the fourth magnification difference so that the third magnification after adjustment is the same as the first magnification and the fourth magnification after adjustment is the same as the second magnification. By determining the fourth magnification difference and adjusting the fourth magnification and the third magnification by the fourth magnification difference, the adjusted third magnification is the same as the first magnification, and the adjusted fourth magnification is the same as the second magnification, so that the two wafers can be basically aligned during subsequent bonding, and the bonding precision is further ensured to be high.
Specifically, after the fourth magnification difference is determined, a person skilled in the art may adjust both the first magnification and the second magnification by the fourth magnification difference such that the adjusted first magnification is the same as the third magnification and the adjusted second magnification is the same as the fourth magnification.
Of course, after determining the third magnification difference or determining the fourth magnification difference, a person skilled in the art may also adjust the magnifications of the two wafers at the same time, that is, adjust the first magnification, the second magnification, the third magnification and the fourth magnification, so that the adjusted first magnification is the same as the adjusted third magnification, and the adjusted second magnification is the same as the adjusted fourth magnification, and the person skilled in the art may flexibly select the magnification according to actual situations.
In another exemplary embodiment of the present application, a control apparatus for wafer bonding is further provided, and it should be noted that the control apparatus for wafer bonding according to the embodiment of the present application may be used to execute the control method for wafer bonding according to the embodiment of the present application. The following describes a control apparatus for wafer bonding according to an embodiment of the present application.
Fig. 4 is a schematic diagram of a control apparatus for wafer bonding according to an embodiment of the present application. As shown in fig. 4, the apparatus includes a first adjusting unit 10, a second adjusting unit 20, and a control unit 30, wherein the first adjusting unit 10 is configured to adjust a first magnification difference of a first wafer and/or a second magnification difference of a second wafer such that the first magnification difference and the second magnification difference are the same, the first magnification difference is a difference between a first magnification of a first exposure region in a first direction and a second magnification in a second direction, the first direction is perpendicular to the second direction, the first direction and the second direction are perpendicular to a thickness direction of the first wafer, the first wafer includes a plurality of first exposure regions, the second magnification difference is a difference between a third magnification of the second exposure region in the first direction and a fourth magnification of the second exposure region in the second direction, the second wafer includes a plurality of the second exposure regions; the second adjusting means 20 is configured to adjust the first magnification and the second magnification, or adjust the third magnification and the fourth magnification such that the first magnification and the third magnification are the same and the second magnification and the fourth magnification are the same; the control unit 30 is configured to control bonding of the first wafer and the second wafer after the first magnification and the second magnification are adjusted or the third magnification and the fourth magnification are adjusted.
The control device for wafer bonding adjusts a first magnification difference value of a first wafer and/or a second magnification difference value of a second wafer through the first adjusting unit, so that the first magnification difference value is the same as the second magnification difference value, and the adjusted magnification difference values of exposure areas of the two wafers are ensured to be the same, wherein the magnification difference values are the difference values of the magnifications of the exposure areas in the first direction and the second direction; the first magnification and the second magnification are adjusted through the second adjusting unit, or the third magnification and the fourth magnification are adjusted, so that the first magnification and the third magnification are the same, the second magnification and the fourth magnification are the same, the widths of the exposure areas of the two adjusted wafers in the first direction are the same, the widths of the exposure areas of the two adjusted wafers in the second direction are the same, and the subsequent bonding can be basically aligned conveniently; and bonding the first wafer and the second wafer by the control unit after adjusting the first magnification and the second magnification or adjusting the third magnification and the fourth magnification. Compared with the prior art that the first magnification ratio and the second magnification ratio are adjusted only before bonding, or the third magnification ratio and the fourth magnification ratio are adjusted, the device performs two times of adjustment, and comprises the steps of adjusting the first magnification ratio and the second magnification ratio to be the same in numerical value, and/or adjusting the third magnification ratio and the fourth magnification ratio to be the same in numerical value, and adjusting the difference value of the first magnification ratio and/or the difference value of the second magnification ratio before, so that the difference value of the first magnification ratio and the difference value of the second magnification ratio are the same, thereby realizing accurate compensation of the expansion coefficient of the wafer, further ensuring that the alignment precision of two wafers is better, and further avoiding the influence of low bonding alignment precision on the subsequent process and the influence of production yield.
According to a specific embodiment of the present application, the first adjusting unit includes a first determining module, a second determining module, and a first adjusting module, where the first determining module is configured to determine a first magnification difference of a first wafer; the second determining module is used for determining a second multiplying power difference value of a second wafer; the first adjusting module is used for adjusting the size of the second exposure area, so that the adjusted second magnification difference value is the same as the first magnification difference value. The third magnification and the fourth magnification of the second exposure area are adjusted by adjusting the size of the second exposure area, so that the adjusted difference value of the second magnification is the same as the difference value of the first magnification, further primary compensation of the magnification of the two wafers in the first direction and the second direction is realized, the same numerical value of the first magnification and the second magnification is conveniently adjusted subsequently, and/or the same numerical value of the third magnification and the fourth magnification is adjusted, further the magnification of the wafer, namely the precise compensation of the expansion coefficient is realized, and further the high alignment precision of the bonding of the two wafers is ensured.
Specifically, in order to further ensure accurate compensation of the magnification of the two wafers in the first direction and the second direction, after determining the first magnification difference of the first wafer and determining the second magnification difference of the second wafer, a person skilled in the art may further adjust the size of the first exposure area so that the adjusted first magnification difference and the adjusted second magnification difference are the same. Of course, after determining the first magnification difference of the first wafer and the second magnification difference of the second wafer, a person skilled in the art may also adjust the size of the first exposure region and the size of the second exposure region, so that the adjusted first magnification difference is the same as the adjusted second magnification difference. The skilled person can determine the wafer to be adjusted according to the actual situation.
According to another specific embodiment of the present application, the first adjusting module includes a first difference module, a determining module, and an adjusting module, wherein the first difference module is configured to difference the first magnification difference value and the second magnification difference value to obtain a sub-magnification difference value; the determining submodule is used for determining an adjusting value of the size of the second exposure area according to the sub-magnification difference; the adjusting submodule is used for adjusting the width of the second exposure area in the first direction and/or the width of the second exposure area in the second direction according to the adjusting value, so that the adjusted second magnification difference is the same as the adjusted first magnification difference. The device obtains a sub-magnification difference value by subtracting the first magnification difference value from the second magnification difference value, determines an adjustment value of the size of the second exposure area according to the sub-magnification difference value, and finally adjusts the width of the second exposure area in the first direction and/or the width of the second exposure area in the second direction according to the adjustment value so that the adjusted second magnification difference value is the same as the adjusted first magnification difference value, thereby further realizing one-time compensation of the magnifications of the two wafers in the first direction and the second direction, facilitating subsequent adjustment of the same value of the first magnification and the second magnification, and/or adjusting the same value of the third magnification and the fourth magnification, and further realizing accurate compensation of the magnification of the wafer, namely the expansion coefficient, thereby ensuring that the alignment precision of the bonding of the two wafers is higher.
Of course, after obtaining the sub-magnification difference by subtracting the first magnification difference from the second magnification difference, a person skilled in the art may also determine an adjustment value of the size of the first exposure region according to the sub-magnification difference, and adjust the width of the first exposure region in the first direction and/or the width of the first exposure region in the second direction according to the adjustment value, so that the adjusted first magnification difference is the same as the adjusted second magnification difference.
In an actual application process, the first determining module includes a first obtaining submodule, a second obtaining submodule, and a second difference submodule, wherein the first obtaining submodule is configured to obtain the first magnification according to a ratio of an actual width value of the first exposure area in the first direction to a design value; the second obtaining submodule is used for obtaining the second magnification according to the ratio of the actual width value of the first exposure area in the second direction to the design value; the second difference module is configured to perform a difference between the first magnification and the second magnification to obtain the first magnification difference.
In an actual application process, the second determining module includes a third obtaining submodule, a fourth obtaining submodule, and a third difference module, where the third obtaining submodule is configured to obtain the third magnification according to a ratio of an actual width value of the second exposure area in the first direction to a design value; the fourth obtaining submodule is used for obtaining the fourth magnification according to the ratio of the actual width value of the second exposure area in the second direction to the design value; the third difference module is configured to perform a difference between the third magnification factor and the fourth magnification factor to obtain the second magnification difference.
In a specific embodiment, the schematic diagram of two wafers to be bonded shown in fig. 3 is obtained by adjusting a first magnification difference of a first wafer and/or a second magnification difference of a second wafer so that the first magnification difference and the second magnification difference are the same, where the first wafer is a CMOS wafer, the second wafer is an Array wafer, the first direction is an X direction, the second direction is a Y direction, the first magnification difference Δ 1 is X1-Y1, the second magnification difference Δ 2 is X2-Y2, and the first magnification difference is the same as the second magnification difference.
According to another specific embodiment of the present application, the second adjusting unit includes a third determining module and a second adjusting module, wherein the third determining module is configured to determine a third magnification difference, and the third magnification difference is a difference between the first magnification and the third magnification; the second adjusting module is configured to adjust both the first magnification and the second magnification by the third magnification difference value, so that the adjusted first magnification is the same as the third magnification, and the adjusted second magnification is the same as the fourth magnification. By determining the third magnification difference and adjusting both the first magnification and the second magnification by the third magnification difference, the adjusted first magnification is the same as the third magnification, and the adjusted second magnification is the same as the fourth magnification, so that the two wafers can be basically aligned during subsequent bonding, and the bonding precision is further ensured to be high.
Specifically, after the third magnification difference is determined, a person skilled in the art may adjust both the third magnification and the fourth magnification by the third magnification difference such that the adjusted third magnification is the same as the first magnification and the adjusted fourth magnification is the same as the second magnification.
According to another specific embodiment of the present application, the second adjusting unit further includes a fourth determining module and a third adjusting module, where the fourth determining module is configured to determine a fourth magnification difference, and the fourth magnification difference is a difference between the second magnification and the fourth magnification; the third adjusting module is configured to adjust both the third magnification and the fourth magnification by the fourth magnification difference, so that the adjusted third magnification is the same as the first magnification, and the adjusted fourth magnification is the same as the second magnification. By determining the fourth magnification difference and adjusting the fourth magnification and the third magnification by the fourth magnification difference, the adjusted third magnification is the same as the first magnification, and the adjusted fourth magnification is the same as the second magnification, so that the two wafers can be basically aligned during subsequent bonding, and the bonding precision is further ensured to be high.
Specifically, after the fourth magnification difference is determined, a person skilled in the art may adjust both the first magnification and the second magnification by the fourth magnification difference such that the adjusted first magnification is the same as the third magnification and the adjusted second magnification is the same as the fourth magnification.
Of course, after determining the third magnification difference or determining the fourth magnification difference, a person skilled in the art may also adjust the magnifications of the two wafers at the same time, that is, adjust the first magnification, the second magnification, the third magnification and the fourth magnification, so that the adjusted first magnification is the same as the adjusted third magnification, and the adjusted second magnification is the same as the adjusted fourth magnification, and the person skilled in the art may flexibly select the magnification according to actual situations.
The control device for wafer bonding comprises a processor and a memory, wherein the first adjusting unit, the second adjusting unit, the control unit and the like are stored in the memory as program units, and the processor executes the program units stored in the memory to realize corresponding functions.
The processor comprises a kernel, and the kernel calls the corresponding program unit from the memory. The kernel can be set to be one or more than one, and the problem that the expansion coefficients of the wafer in the X direction and the Y direction cannot be accurately compensated in the prior art is solved by adjusting the kernel parameters.
The memory may include volatile memory in a computer readable medium, Random Access Memory (RAM) and/or nonvolatile memory such as Read Only Memory (ROM) or flash memory (flash RAM), and the memory includes at least one memory chip.
An embodiment of the present invention provides a storage medium, on which a program is stored, and the program, when executed by a processor, implements the wafer bonding control method described above.
The embodiment of the invention provides a processor, which is used for running a program, wherein the program executes the control method for wafer bonding during running.
The embodiment of the invention provides equipment, which comprises a processor, a memory and a program which is stored on the memory and can run on the processor, wherein when the processor executes the program, at least the following steps are realized:
step S101, adjusting a first magnification difference of a first wafer and/or a second magnification difference of a second wafer to enable the first magnification difference and the second magnification difference to be the same, wherein the first magnification difference is a difference between a first magnification of a first exposure area in a first direction and a second magnification of the first exposure area in a second direction, the first direction is perpendicular to the second direction, the first direction and the second direction are perpendicular to a thickness direction of the first wafer, the first wafer comprises a plurality of first exposure areas, the second magnification difference is a difference between a third magnification of the second exposure area in the first direction and a fourth magnification of the second exposure area in the second direction, and the second wafer comprises a plurality of second exposure areas;
step S102 of adjusting the first magnification and the second magnification, or adjusting the third magnification and the fourth magnification so that the first magnification and the third magnification are the same, and the second magnification and the fourth magnification are the same;
step S103 is performed to control bonding of the first wafer and the second wafer after the first magnification and the second magnification are adjusted, or the third magnification and the fourth magnification are adjusted.
The device herein may be a server, a PC, a PAD, a mobile phone, etc.
The present application further provides a computer program product adapted to perform a program of initializing at least the following method steps when executed on a data processing device:
step S101, adjusting a first magnification difference of a first wafer and/or a second magnification difference of a second wafer to enable the first magnification difference and the second magnification difference to be the same, wherein the first magnification difference is a difference between a first magnification of a first exposure area in a first direction and a second magnification of the first exposure area in a second direction, the first direction is perpendicular to the second direction, the first direction and the second direction are perpendicular to a thickness direction of the first wafer, the first wafer comprises a plurality of first exposure areas, the second magnification difference is a difference between a third magnification of the second exposure area in the first direction and a fourth magnification of the second exposure area in the second direction, and the second wafer comprises a plurality of second exposure areas;
step S102 of adjusting the first magnification and the second magnification, or adjusting the third magnification and the fourth magnification so that the first magnification and the third magnification are the same, and the second magnification and the fourth magnification are the same;
step S103 is performed to control bonding of the first wafer and the second wafer after the first magnification and the second magnification are adjusted, or the third magnification and the fourth magnification are adjusted.
In the above embodiments of the present invention, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to related descriptions of other embodiments.
In the embodiments provided in the present application, it should be understood that the disclosed technology can be implemented in other ways. The above-described embodiments of the apparatus are merely illustrative, and for example, the above-described division of the units may be a logical division, and in actual implementation, there may be another division, for example, multiple units or components may be combined or may be integrated into another system, or some features may be omitted, or not executed. In addition, the shown or discussed mutual coupling or direct coupling or communication connection may be an indirect coupling or communication connection through some interfaces, units or modules, and may be in an electrical or other form.
The units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of the embodiment.
In addition, functional units in the embodiments of the present invention may be integrated into one processing unit, or each unit may exist alone physically, or two or more units are integrated into one unit. The integrated unit can be realized in a form of hardware, and can also be realized in a form of a software functional unit.
The integrated unit may be stored in a computer-readable storage medium if it is implemented in the form of a software functional unit and sold or used as a separate product. Based on such understanding, the technical solution of the present invention may be embodied in the form of a software product, which is stored in a storage medium and includes instructions for causing a computer device (which may be a personal computer, a server, or a network device) to execute all or part of the steps of the above methods according to the embodiments of the present invention. And the aforementioned storage medium includes: a U-disk, a Read-Only Memory (ROM), a Random Access Memory (RAM), a removable hard disk, a magnetic or optical disk, and other various media capable of storing program codes.
According to yet another exemplary embodiment of the present application, there is also provided a bonding system, including a wafer bonding apparatus and a wafer bonding control apparatus, wherein the wafer bonding control apparatus is configured to perform any one of the above methods.
According to the bonding system, the control device for wafer bonding executes the control method, so that the amplification factors, namely the expansion coefficients, of the two wafers in the first direction and the second direction can be accurately compensated, the widths of the exposure areas of the two wafers after adjustment in the first direction can be ensured to be the same, the widths of the exposure areas of the two wafers after adjustment in the second direction are the same, the alignment accuracy of the two wafers is ensured to be good, and the influence of low bonding alignment accuracy on the subsequent process and the production yield can be further avoided.
From the above description, it can be seen that the above-described embodiments of the present application achieve the following technical effects:
1) the application provides a control method of wafer bonding, which comprises the steps of firstly adjusting a first magnification difference value of a first wafer and/or a second magnification difference value of a second wafer to enable the first magnification difference value to be the same as the second magnification difference value, ensuring that magnification difference values of exposure areas of two adjusted wafers are the same, wherein the magnification difference values are the difference values of amplification magnifications of the exposure areas in a first direction and a second direction; then, adjusting the first magnification ratio and the second magnification ratio, or adjusting the third magnification ratio and the fourth magnification ratio, so that the first magnification ratio and the third magnification ratio are the same, and the second magnification ratio and the fourth magnification ratio are the same, thereby ensuring that the widths of the exposure areas of the two adjusted wafers in the first direction are the same, ensuring that the widths of the exposure areas of the two adjusted wafers in the second direction are the same, and facilitating the basic alignment of subsequent bonding; finally, after the first magnification and the second magnification are adjusted, or the third magnification and the fourth magnification are adjusted, the first wafer and the second wafer are controlled to be bonded. Compared with the prior art that the first magnification ratio and the second magnification ratio are adjusted by the same numerical value before bonding or the third magnification ratio and the fourth magnification ratio are adjusted by the same numerical value before bonding, the method carries out adjustment twice, and comprises the steps of adjusting the first magnification ratio and the second magnification ratio by the same numerical value and/or adjusting the third magnification ratio and the fourth magnification ratio by the same numerical value, and adjusting the first magnification ratio difference value and/or the second magnification ratio difference value before so that the first magnification ratio difference value and the second magnification ratio difference value are the same, thereby realizing accurate compensation of the expansion coefficient of the wafer, further ensuring that the alignment precision of two wafers is better, and further avoiding the influence of low bonding alignment precision on the subsequent process and the influence of production yield.
2) The application also provides a control device for wafer bonding, which adjusts a first magnification difference value of a first wafer and/or a second magnification difference value of a second wafer through the first adjusting unit, so that the first magnification difference value is the same as the second magnification difference value, and the adjusted magnification difference values of the exposure areas of the two wafers are ensured to be the same, wherein the magnification difference value is the difference value of the magnifications of the exposure areas in the first direction and the second direction; the first magnification and the second magnification are adjusted through the second adjusting unit, or the third magnification and the fourth magnification are adjusted, so that the first magnification and the third magnification are the same, the second magnification and the fourth magnification are the same, the widths of the exposure areas of the two adjusted wafers in the first direction are the same, the widths of the exposure areas of the two adjusted wafers in the second direction are the same, and the subsequent bonding can be basically aligned conveniently; and bonding the first wafer and the second wafer by the control unit after adjusting the first magnification and the second magnification or adjusting the third magnification and the fourth magnification. Compared with the prior art that the first magnification ratio and the second magnification ratio are adjusted only before bonding, or the third magnification ratio and the fourth magnification ratio are adjusted, the device performs two times of adjustment, and comprises the steps of adjusting the first magnification ratio and the second magnification ratio to be the same in numerical value, and/or adjusting the third magnification ratio and the fourth magnification ratio to be the same in numerical value, and adjusting the difference value of the first magnification ratio and/or the difference value of the second magnification ratio before, so that the difference value of the first magnification ratio and the difference value of the second magnification ratio are the same, thereby realizing accurate compensation of the expansion coefficient of the wafer, further ensuring that the alignment precision of two wafers is better, and further avoiding the influence of low bonding alignment precision on the subsequent process and the influence of production yield.
3) Compared with the prior art in which the control device for wafer bonding executes the control method, the bonding system adjusts the first magnification and the second magnification or adjusts the third magnification and the fourth magnification before bonding, the system carries out two times of adjustment, not only comprises the adjustment of the same numerical value of the first magnification ratio and the second magnification ratio, and/or adjusting the third magnification factor and the fourth magnification factor by the same value, and also adjusting the difference value of the first magnification factor and/or the difference value of the second magnification factor before, the first multiplying power difference value and the second multiplying power difference value are the same, thereby realizing the accurate compensation of the expansion coefficient of the wafer, and the alignment precision of the two wafers is better, so that the influence of low bonding alignment precision on the subsequent process and the influence of production yield are avoided.
The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims (10)
1. A method for controlling wafer bonding, comprising:
adjusting a first magnification difference value of a first wafer and/or a second magnification difference value of a second wafer to enable the first magnification difference value and the second magnification difference value to be the same, wherein the first magnification difference value is a difference value between a first magnification of a first exposure area in a first direction and a second magnification of the first exposure area in a second direction, the first direction is perpendicular to the second direction, the first direction and the second direction are respectively perpendicular to the thickness direction of the first wafer, the first wafer comprises a plurality of first exposure areas, the second magnification difference value is a difference value between a third magnification of the second exposure area in the first direction and a fourth magnification of the second exposure area in the second direction, and the second wafer comprises a plurality of second exposure areas;
adjusting the first magnification and the second magnification, or adjusting the third magnification and the fourth magnification, so that the first magnification and the third magnification are the same, and the second magnification and the fourth magnification are the same;
and after the first magnification ratio and the second magnification ratio are adjusted, or the third magnification ratio and the fourth magnification ratio are adjusted, controlling to bond the first wafer and the second wafer.
2. The method of claim 1, wherein adjusting a first magnification difference of a first wafer and/or a second magnification difference of a second wafer such that the first magnification difference and the second magnification difference are the same comprises:
determining a first magnification difference value of a first wafer;
determining a second magnification difference value of a second wafer;
and adjusting the size of the second exposure area to ensure that the adjusted second magnification difference value is the same as the first magnification difference value.
3. The method of claim 1, wherein adjusting the size of the second exposure area such that the adjusted second magnification difference is the same as the first magnification difference comprises:
subtracting the first multiplying power difference value from the second multiplying power difference value to obtain a sub-multiplying power difference value;
determining an adjustment value of the size of the second exposure area according to the sub-magnification difference;
and adjusting the width of the second exposure area in the first direction and/or the width of the second exposure area in the second direction according to the adjustment value, so that the adjusted second magnification difference is the same as the first magnification difference.
4. The method of claim 1, wherein determining the first magnification difference for the first wafer comprises:
obtaining the first magnification according to the ratio of the actual width value of the first exposure area in the first direction to the design value;
obtaining the second magnification according to the ratio of the actual width value of the first exposure area in the second direction to the design value;
and obtaining the difference value of the first magnification by differentiating the first magnification and the second magnification.
5. The method of claim 1, wherein determining a second magnification difference for a second wafer comprises:
obtaining the third magnification according to the ratio of the actual width value of the second exposure area in the first direction to the design value;
obtaining the fourth magnification according to the ratio of the actual width value of the second exposure area in the second direction to the design value;
and subtracting the third magnification ratio and the fourth magnification ratio to obtain the second magnification ratio difference value.
6. The method of claim 1, wherein adjusting the first magnification and the second magnification, or adjusting the third magnification and the fourth magnification such that the first magnification and the third magnification are the same and such that the second magnification and the fourth magnification are the same comprises:
determining a third magnification difference, the third magnification difference being a difference between the first magnification and the third magnification;
and adjusting the first magnification and the second magnification by the third magnification difference value, so that the adjusted first magnification is the same as the third magnification, and the adjusted second magnification is the same as the fourth magnification.
7. A control device for wafer bonding is characterized by comprising:
the first adjusting unit is used for adjusting a first magnification difference value of a first wafer and/or a second magnification difference value of a second wafer so that the first magnification difference value and the second magnification difference value are the same, wherein the first magnification difference value is a difference value between a first magnification of a first exposure area in a first direction and a second magnification of the first exposure area in a second direction, the first direction is perpendicular to the second direction, the first direction and the second direction are respectively perpendicular to the thickness direction of the first wafer, the first wafer comprises a plurality of first exposure areas, the second magnification difference value is a difference value between a third magnification of the second exposure area in the first direction and a fourth magnification of the second exposure area in the second direction, and the second wafer comprises a plurality of second exposure areas;
a second adjusting unit configured to adjust the first magnification and the second magnification, or adjust the third magnification and the fourth magnification so that the first magnification and the third magnification are the same, and so that the second magnification and the fourth magnification are the same;
and the control unit is used for controlling the bonding of the first wafer and the second wafer after the first magnification and the second magnification are adjusted or the third magnification and the fourth magnification are adjusted.
8. A computer-readable storage medium, characterized in that the storage medium comprises a stored program, wherein the program performs the method of any one of claims 1 to 6.
9. A processor, characterized in that the processor is configured to run a program, wherein the program when running performs the method of any of claims 1 to 6.
10. A bonding system comprising a wafer bonding apparatus and a wafer bonding control apparatus, wherein the wafer bonding control apparatus is configured to perform the method of any one of claims 1 to 6.
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| CN112382578B (en) | 2023-09-29 |
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