CN112350140A - Mixed mode pulse laser - Google Patents
Mixed mode pulse laser Download PDFInfo
- Publication number
- CN112350140A CN112350140A CN202011150174.8A CN202011150174A CN112350140A CN 112350140 A CN112350140 A CN 112350140A CN 202011150174 A CN202011150174 A CN 202011150174A CN 112350140 A CN112350140 A CN 112350140A
- Authority
- CN
- China
- Prior art keywords
- laser
- fiber
- optical fiber
- amplifier
- microchip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/067—Fibre lasers
- H01S3/06754—Fibre amplifiers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/04—Arrangements for thermal management
- H01S3/0404—Air- or gas cooling, e.g. by dry nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/04—Arrangements for thermal management
- H01S3/042—Arrangements for thermal management for solid state lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
Abstract
The invention provides a mixed mode pulse laser, which comprises a microchip pulse seed unit and a single-stage optical fiber amplification unit; the microchip pulse seed unit comprises a laser, a microchip crystal and a passive Q-switched crystal which are arranged in sequence; the microchip pulse seed unit is used for outputting pulse seed laser; the single-stage optical fiber amplification unit comprises a large mode field optical fiber and a plurality of amplifier in-band pumping sources, and each amplifier in-band pumping source is used for pumping the large mode field optical fiber; the single-stage optical fiber amplifying unit is used for amplifying the laser output by the microchip pulse seed unit and outputting the amplified laser. The mixed mode pulse laser provided by the embodiment of the invention improves the heat dissipation efficiency and the average output power of the pulse wind-cooling fiber laser, and simultaneously can reduce the integration complexity and the production cost of the whole machine and improve the long-term stability of the system work through the modular configuration of the microchip pulse seed unit and the single-stage fiber amplification unit.
Description
Technical Field
The invention relates to the technical field of laser, in particular to a mixed mode pulse laser.
Background
The laser with the emission wavelength concentrated in the range of 1.85-2.15 mu m is positioned in a human eye safety area, and is also positioned in a strong water molecule absorption peak and two weak atmospheric absorption band ranges, so that the laser in the wave band shows high application value in the fields of transparent plastic material processing, laser surgery, laser skin treatment, laser measurement and sensing and the like, particularly, an industrial chain related to the integration of a thulium-doped fiber laser (with the emission wavelength concentrated in the range of 1.9-2.05 mu m) is gradually mature, and the thulium-doped fiber laser can replace the traditional CO in a plurality of application scenes2The laser, the thulium solid laser, the holmium solid laser and the parametric transformation laser have wide application prospect in large-scale industry.
Utilize the longitudinal gain distribution of thulium optic fibre to carry out waste heat management, can directly rely on the air-cooled mode to obtain higher power laser output, if can further promote average output power and peak power, realize that vaporization cutting efficiency promotes, the rubble is more meticulous and the heat damage is less, and pulse thulium optic fibre laser system expects to become one of future uropoiesis surgical's main power tool. On the other hand, accurate surgical operations (such as skull base operations, heart operations, hepatic carcinoma portal vein cancer embolus ablation, etc.) have higher requirements for short laser pulse width.
The thulium fiber laser with short pulse operation has higher requirements on heat dissipation performance of the whole laser, when the existing 790nm LD is adopted to excite the thulium fiber, the heat loss of the actual comprehensive gain fiber exceeds 50 percent, and the heat loss of the LD is about 55 percent, so that 100-watt 2-micron nanosecond pulse laser is obtained, the waste heat power generated in the system is about 350 watts, and the heat management design difficulty is high. The problems that waste heat is too concentrated and the average output power is difficult to improve commonly exist in the conventional forced air cooling pulse thulium optical fiber laser.
Disclosure of Invention
The invention solves the problems that the waste heat of the existing forced air cooling pulse thulium optical fiber laser is too concentrated and the average output power is difficult to improve.
In order to solve the above problems, the present invention provides a mixed mode pulse laser, which includes a microchip pulse seed unit and a single-stage fiber amplification unit; the microchip pulse seed unit comprises a laser, a microchip crystal and a passive Q-switched crystal which are sequentially arranged; the microchip pulse seed unit is used for outputting pulse seed laser; the single-stage optical fiber amplification unit comprises a large mode field optical fiber and a plurality of amplifier in-band pumping sources, and each amplifier in-band pumping source is used for pumping the large mode field optical fiber; the single-stage optical fiber amplifying unit is used for amplifying the laser output by the microchip pulse seed unit and outputting the amplified laser.
Optionally, the single-stage fiber amplification unit further includes a forward fiber combiner, and at least one of the amplifier in-band pumping sources pumps the large mode field fiber through the forward fiber combiner; and/or the optical fiber amplifier further comprises a reverse optical fiber combiner, and at least one amplifier in-band pumping source pumps the large-mode-field optical fiber through the reverse optical fiber combiner.
Optionally, the system further comprises a fan module for forced air cooling; each amplifier is provided with an internal pumping source and is arranged on one side of the air inlet; and/or the amplifier further comprises a radiating fin module, and each amplifier in-band pumping source is arranged in contact with the radiating fin module.
Optionally, the microchip pulse seed unit further comprises: the device comprises a collimation focusing coupler, a plano-concave output mirror, a focusing coupler and a seed source output optical fiber; the laser, the collimation focusing coupler, the microchip crystal, the passive Q-switched crystal, the plano-concave output mirror, the focusing coupler and the seed source output optical fiber are arranged in sequence.
Optionally, the amplifier in-band pump source comprises: the large mode field erbium ytterbium co-doped fiber, the laser and the fiber combiner; the laser pumps the large mode field erbium ytterbium co-doped fiber through the fiber combiner.
Optionally, the heat dissipation fin module includes an upper layer fin and a lower layer fin; the lower surface of the upper layer fin is attached to the upper surface of the lower layer fin; each amplifier is provided with an internal pumping source, and the microchip pulse seed unit is arranged in contact with the upper surface of the upper-layer fin; and other optical devices of the single-stage optical fiber amplification unit except the in-band pumping source of each amplifier are arranged in contact with the lower surface of the lower-layer fin.
Optionally, the laser of the microchip pulse seed unit and the laser of the amplifier with the internal pumping source are both provided with a semiconductor refrigeration chip for temperature control.
Optionally, the single-stage fiber amplification unit further includes a fiber coupling isolator and/or a fiber mode field matching filter disposed before the forward fiber combiner.
Optionally, the single stage fiber amplification unit further comprises at least one of: the optical fiber coupler comprises a cladding optical filter, a high-power isolator, a multimode fiber coupler and a multimode energy transmission fiber.
Optionally, the microchip crystal is a thulium ion doped microchip crystal, or the large mode field fiber is a large mode field thulium doped fiber, or the amplifier in-band pump source is an erbium ytterbium fiber laser in-band pump source.
According to the mixed mode pulse laser provided by the embodiment of the invention, a passive Q-switching microchip seed source, a single-stage optical fiber amplification unit and an optical fiber laser in-band pumping combination scheme are adopted, nanosecond pulse laser output is realized through the passive Q-switching microchip laser scheme, an in-band pumping amplification structure can reduce heat loss of a main amplification system, target high-power laser output can be obtained through a first-stage amplifier, the heat dissipation efficiency and the average cold light output power of the pulse wind-driven laser are improved, and meanwhile, the integration complexity and the production cost of the whole machine can be reduced through the modularized configuration of the microchip pulse seed unit and the single-stage optical fiber amplification unit, and the long-term working stability of the system is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
FIG. 1 is a schematic diagram of a mixed mode pulse laser according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of an in-band pump source of a mixed mode pulsed laser according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a bottom integrated plane of a mixed mode medical pulsed laser according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a side distribution structure of a mixed-mode medical pulsed laser according to an embodiment of the present invention.
Description of reference numerals:
i-passively Q-switched microchip seed units;
II, a large mode field thulium optical fiber amplifying unit;
110-a semiconductor laser;
120-a collimating focusing coupler;
130-thulium ion doped microchip crystal;
140-passively Q-switched crystal;
150-plano-concave output mirror;
160-focusing coupler;
170-seed source output fiber;
180-fiber coupled isolator;
190-optical fiber mode field matching filter;
200-amplifier in-band pump source;
210-forward (2+1) × 1 fiber combiner;
220-large mode field thulium doped fiber;
230-reverse (2+1) × 1 fiber combiner;
240-cladding light mode filter;
250-a high power isolator;
260-multimode fiber coupler;
270-multimode energy transmission fiber;
280-a semiconductor laser;
290-reverse (2+1) × 1 fiber combiner;
300-large mode field erbium ytterbium co-doped fiber;
310-high reflection fiber grating;
320-low reflection fiber grating;
330-optical fiber cladding light mode filter;
340-a photosensor;
350-amplifier in-band pump source drive board;
360-amplifier in-band pump source temperature control board;
370-laser central control panel;
380-passive Q-switched microchip seed unit driving board;
390-passively Q-switched microchip seed unit temperature control plate;
400-optical fiber finishing disc;
410-optical fiber transition hole;
420-a fan module;
430-laser upper fin module;
440-laser lower layer fin module.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The embodiment provides a mixed mode pulse laser which comprises a microchip pulse seed unit and a single-stage optical fiber amplifying unit.
The microchip pulse seed unit comprises a laser, a microchip crystal and a passive Q-switched crystal single-stage optical fiber amplification unit which are sequentially arranged, wherein the microchip pulse seed unit comprises a large mode field optical fiber and a plurality of amplifier in-band pumping sources, and each amplifier in-band pumping source is used for pumping the large mode field optical fiber. The microchip pulse seed unit is used for outputting pulse seed laser, and the single-stage optical fiber amplification unit is used for amplifying the laser output by the microchip pulse seed unit and outputting the amplified laser.
Optionally, the microchip crystal is a thulium ion doped microchip crystal, or the large mode field fiber is a large mode field thulium doped fiber, or the amplifier in-band pump source is an erbium ytterbium fiber laser in-band pump source.
The pulse seed source adopts a passive Q-switched microchip pulse seed source, can provide pulse laser with higher output average power and narrower output pulse width, and has small volume and low cost.
The in-band pumping source of the amplifier is introduced into the optical fiber amplifying unit, so that the heat loss in the optical fiber amplifier can be greatly reduced, and the long-term pulse stable operation of the amplifier under high power is ensured.
Due to the common guarantee of the passive Q-switched microchip pulse seed source with higher power and the in-band pumping mode, the amplifier can output the required high-power narrow pulse laser by adopting a single-stage large-mode-field optical fiber amplifier, and the integration manufacturing difficulty of the high-power pulse optical fiber laser is greatly reduced.
The mixed mode pulse laser provided by the embodiment adopts a passive Q-switched microchip seed source, a single-stage optical fiber amplification unit and an optical fiber laser in-band pumping combination scheme, nanosecond pulse laser output is realized through the passive Q-switched microchip laser scheme, the heat loss of a main amplification system can be reduced through an in-band pumping amplification structure, target high-power laser output can be obtained through a first-stage amplifier, the heat dissipation efficiency and the average output power of the pulse wind-cooling optical fiber laser are improved, meanwhile, the integration complexity of the whole machine and the production cost can be reduced through the modularized configuration of the microchip pulse seed unit and the single-stage optical fiber amplification unit, and the long-term stability of the system work is improved.
Optionally, the single-stage fiber amplification unit may further include a forward fiber combiner, and at least one amplifier in-band pump source pumps the large mode field fiber through the forward fiber combiner; and/or, may further comprise an inverse fiber combiner through which the at least one amplifier in-band pump source pumps the large mode field fiber. In this embodiment, for example, the large mode field fiber is a large mode field thulium doped fiber, the forward fiber combiner is a forward (2+1) × 1 fiber combiner, and the backward fiber combiner is a backward (2+1) × 1 fiber combiner.
The single-stage optical fiber amplifying unit can further comprise an optical fiber coupling isolator and an optical fiber mode field matching mode filter which are arranged in front of the forward optical fiber combiner.
With the change of the actual use scenario of the mixed mode pulse laser, the single-stage fiber amplification unit may include at least one of the following at the output end: the optical fiber coupler comprises a cladding optical filter, a high-power isolator, a multimode fiber coupler and a multimode energy transmission fiber. The four devices of the cladding optical mode filter, the high-power isolator, the multimode fiber coupler and the multimode energy transmission fiber can be flexibly configured, for example, the high-power isolator can not be included in an application scene without the influence of return light, the high-power isolator and the multimode fiber coupler can not be included in a use scene without the need of replacing an output fiber by a user, and the cladding optical mode filter can also not be included in a scene that the laser output in a 1550nm-1580nm waveband is expected to be simultaneously obtained.
Optionally, the microchip pulse seed unit further includes: the device comprises a collimation focusing coupler, a plano-concave output mirror, a focusing coupler and a seed source output optical fiber; the laser, the collimation focusing coupler, the microchip crystal, the passive Q-switched crystal, the plano-concave output mirror, the focusing coupler and the seed source output optical fiber are arranged in sequence.
Optionally, the amplifier in-band pump source may include: the large mode field erbium ytterbium co-doped fiber, the laser and the fiber combiner; the laser is pumped with a large mode erbium ytterbium co-doped fiber through a fiber combiner.
Referring to a schematic structural diagram of a mixed mode pulse laser shown in fig. 1, an example that an optical portion of the mixed mode pulse laser includes a passive Q-switched microchip seed unit I and a large mode field thulium optical fiber amplification unit II is described.
The passive Q-switched microchip seed unit I includes a semiconductor laser 110, a collimating focusing coupler 120, a thulium ion-doped microchip crystal 130, a passive Q-switched crystal 140, a plano-concave output mirror 150, a focusing coupler 160, and a seed source output fiber 170. The large mode field thulium optical fiber amplifying unit II includes an optical fiber coupling isolator 180, an optical fiber mode field matching filter 190, four amplifier in-band pump sources 200, a forward (2+1) × 1 optical fiber combiner 210, a section of large mode field thulium doped optical fiber 220, a reverse (2+1) × 1 optical fiber combiner 230, a cladding optical filter 240, a high power isolator 250, a multimode optical fiber coupler 260, and a section of multimode energy conducting optical fiber 270.
The output wavelength of the semiconductor laser 110 is in the range of 780-805nm, and the output power is in the range of 4-6W; the collimating and focusing coupler 120 collimates and focuses the output laser of the semiconductor laser 110, and the diameter of the focused light spot is in the range of 0.1-0.4 mm. The thulium ion doping concentration of the thulium ion doped microchip crystal 130 is in the range of 3% -5%, the crystal length is in the range of 2mm-5mm, the front end face of the crystal is located at the position of a focusing light spot of the collimating focusing coupler 120, and the crystal substrate material can be YAG, YLF, YVO4, LuVO4, YAP, KYW, KLuW and the like. The passively Q-switched crystal 140 is a high-quality saturable absorber in the wavelength range of 1900nm-2050nm, can be one of II-VI compounds such as Cr2+ doped ZnS, ZnSe, CdS, CdSe and the like, and can also be a novel saturable absorbing material such as a semiconductor material, a carbon nano tube, black phosphorus, a topological insulator, molybdenum disulfide and the like. The radius of curvature of the concave surface of the plano-concave output mirror 150 is within the range of 30mm-50mm, the output transmittance of the plano-concave output mirror 150 within the wavelength range of 1930nm-1980nm is within the range of 1% -6%, and the laser reflectivity within the range of 785-795nm exceeds 98%. The focusing coupler 160 focuses the output 1930nm-1980nm pulse laser into the seed source output optical fiber 170, and the focusing coupler 160 has a photoelectric monitoring function. The diameter of the core of the seed source output optical fiber 170 is within the range of 10 mu m to 30 mu m, the numerical aperture of the core is not more than 0.15, the diameter of the inner cladding is within the range of 130 mu m to 250 mu m, and the numerical aperture of the inner cladding is not more than 0.5.
The final output laser average power of the passively Q-switched microchip seed unit I is within the range of 0.5-0.6 watt, the pulse width is within the range of 100ns-400ns, the pulse repetition frequency is within the range of 20kHz-100kHz, and the spectral line width is within the range of 0.1nm-1 nm.
The fiber coupling isolator 180 is a non-polarization isolator, the parameters of the fibers at two ends are the same as those of the seed source output fiber 170, and the insertion loss is not more than 15%; the fiber parameters of the fiber mode field matching filter 190 at the incident end are the same as those of the fiber at the output end of the fiber coupling isolator 180, the fiber parameters of the fiber at the emergent end are the same as those of the signal fiber of the forward (2+1) x 1 fiber combiner 210, and the filtering proportion of the fiber power of the cladding transmitted in the reverse direction exceeds 20 dB.
The output wavelengths of the four amplifier in-band pump sources 200 are in the range of 1550nm to 1580nm, the output powers are in the range of 35 w to 40 w, wherein the first amplifier in-band pump source 200 and the second amplifier in-band pump source 200 pump the large mode field thulium doped fiber 220 through the forward (2+1) × 1 optical fiber combiner 210, and the third amplifier in-band pump source 200 and the fourth amplifier in-band pump source 200 pump the large mode field thulium doped fiber 220 through the backward (2+1) × 1 optical fiber combiner 230.
The pumping arm optical fibers of the two (2+1) × 1 optical fiber beam combiners 210 and 230 are 1550nm-1580nm waveband low-loss energy-transmitting optical fibers, the fiber core diameter and the numerical aperture of the pumping arm optical fibers are not smaller than those of the output tail fiber of the pumping source 190 in the amplifier band, the output beam combining optical fibers of the two (2+1) × 1 optical fiber beam combiners 210 and 230 have the same parameters as the input signal arm optical fibers and are double-clad optical fibers, and the fiber core (inner cladding) diameter and the numerical aperture of the output beam combining optical fibers are the same as those of the large-mode-field thulium-doped optical fiber 220.
The large-mode-field thulium-doped optical fiber 220 is a double-clad optical fiber, the diameter of a fiber core is within the range of 20-30 μm, the numerical aperture of the fiber core is not more than 0.11, the diameter of an inner cladding is within the range of 200-400 μm, the numerical aperture of the inner cladding is not more than 0.5, and the total absorption proportion of the large-mode-field thulium-doped optical fiber 220 at the pumping wavelength of 1550-1580 nm needs to be controlled within the range of 12dB-15 dB; the cladding optical mode filter 240 is manufactured based on a passive double-cladding optical fiber, the sizes and the numerical apertures of a fiber core and a cladding of the cladding are the same as those of the large-mode-field thulium-doped optical fiber 220, and the cladding optical power filtering proportion of the cladding optical mode filter 240 exceeds 20 dB; the high-power isolator 250 is a non-polarized isolator with double-cladding optical fiber input and free space output, the sizes and the numerical apertures of a fiber core and a cladding of the high-power isolator are the same as those of the optical fiber of the cladding optical mode filter 240, the insertion loss of the high-power isolator 250 is not more than 5%, and the diameter of an output laser spot is within the range of 1.5mm-2.0 mm; the multimode fiber coupler 260 couples the collimated laser output by the high-power isolator 250 into the multimode energy-transmitting fiber 270 again, and has the functions of indicating light coupling and photoelectric monitoring; the multimode energy transmission optical fiber 270 is a repeatedly pluggable optical fiber, the diameter of the fiber core is in the range of 100-1000 μm, and the numerical aperture is in the range of 0.15-0.5.
Referring to fig. 2, a schematic structural diagram of an in-band pump source of a mixed mode pulse laser is shown, and an example that an optical portion of the mixed mode pulse laser includes a passive Q-switched microchip seed unit I and a large mode field thulium optical fiber amplification unit II is described.
The amplifier in-band pump source 200 is a single-stage oscillator with a reverse pump structure, and includes two semiconductor lasers 280, a reverse (2+1) × 1 fiber combiner 290, a section of large mode erbium-ytterbium co-doped fiber 300, a highly reflective fiber grating 310, a low reflective fiber grating 320, a fiber cladding optical filter 330 and a photosensor 340.
The output wavelengths of the two semiconductor lasers 280 are in the range of 910-; the pump arm fiber of the reverse (2+1) x 1 fiber combiner 290 is a low-loss energy-transfer fiber with a wave band of 910nm-980nm, the diameter and the numerical aperture of the fiber core of the pump arm fiber are not smaller than those of the fiber core and the numerical aperture of the output tail fiber of the semiconductor laser 280, the output beam combining fiber of the reverse (2+1) x 1 fiber combiner 290 has the same parameters as the input signal arm fiber and is a double-clad fiber, and the diameter and the numerical aperture of the fiber core (inner cladding) of the output beam combining fiber are the same as those of the large mode field erbium-ytterbium co-doped fiber 300; the large mode erbium ytterbium co-doped fiber 300 is a double-clad fiber, the diameter of the core is within the range of 10 mu m to 20 mu m, the numerical aperture of the core is not more than 0.15, the diameter of the inner cladding is within the range of 100 mu m to 250 mu m, the numerical aperture of the inner cladding is not more than 0.5, and the total absorption ratio of the large mode erbium ytterbium co-doped fiber 300 at the pumping wavelength of 910nm to 980nm needs to be controlled within the range of 12dB to 15 dB.
The high-reflection fiber grating 310 and the low-reflection fiber grating 320 are a pair of gratings which are based on passive easy-sensitized double-clad fiber writing, have the central wavelength difference of not more than 0.02nm and the side mode suppression ratio of more than 20dB, and have the same fiber core (inner cladding) diameter and numerical aperture as the large mode field erbium-ytterbium co-doped fiber 300; the central wavelengths of the high-reflection fiber grating 310 and the low-reflection fiber grating 320 are in the range of 1550nm-1580nm, wherein the central wavelength reflectivity of the high-reflection fiber grating 310 exceeds 99.9%, and the central wavelength reflectivity of the low-reflection fiber grating 320 is in the range of 5% -20%; the optical fiber cladding light filter 330 is connected with the high-reflection fiber grating 310, the optical fiber specification of the optical fiber is consistent with that of the output beam combining optical fiber of the reverse (2+1) multiplied by 1 optical fiber beam combiner 290, and the filtering proportion of the optical fiber cladding light power exceeds 20 dB; the photoelectric sensor 340 is a photodiode responding to laser in the range of 1550nm to 1580nm and is used for monitoring the working state of the in-band pumping source 200 of the amplifier.
The semiconductor laser 110 and the semiconductor lasers 280 in the four amplifier in-band pumping sources 200 are required to be precisely controlled in temperature by semiconductor refrigerating sheets, the temperature control range is 20-35 ℃, and the temperature control precision is better than 0.1 ℃. Both the large mode field thulium doped fiber 220 and the large mode field erbium ytterbium co-doped fiber 300 need to be coiled in a metal tank for good conduction cooling. The thulium ion doped microchip crystal 130, the passive Q-switched crystal 140, the fiber coupling isolator 180, the fiber mode field matching mode filter 190, the forward (2+1) × 1 fiber combiner 210, the backward (2+1) × 1 fiber combiner 230, the cladding light mode filter 240, the high power isolator 250, the multimode fiber coupler 260, the backward (2+1) × 1 fiber combiner 290, the high reflection fiber grating 310, the low reflection fiber grating 320 and the fiber cladding light mode filter 330 are coated with thermal grease on the bottom surface of the device and are arranged on a metal heat sink for conduction cooling.
Because of the change of the practical use scenario of the laser of the present invention, the four devices of the cladding optical mode filter 240, the high power isolator 250, the multimode fiber coupler 260 and the multimode energy-transferring fiber 270 at the output end can be flexibly configured, for example, the high power isolator 250 may not be included in the application scenario without the influence of return light, the high power isolator 250 and the multimode fiber coupler 260 may not be included in the use scenario without the user replacing the output fiber, and the cladding optical mode filter 240 may not be included in the scenario desiring to obtain the laser output in the 1550nm-1580nm band at the same time.
In the embodiment, a 2-micron waveband laser with 100 watt-level average power and nanosecond pulse width is realized by a passive Q-switched microchip seed source, a single-stage large-mode-field thulium optical fiber amplifier and an Er/Yb optical fiber laser in-band pumping combination scheme, the problems that waste heat is excessively concentrated and the average output power is difficult to improve commonly existing in a forced air-cooled pulse thulium optical fiber laser are solved, meanwhile, the integration complexity and the production cost of the whole machine are reduced through modular configuration, and the long-term stability of the system in working is improved.
The parameter configuration of the main devices in the passive Q-switched microchip seed unit I comprises the following steps: the semiconductor laser 110 adopts a 793nm semiconductor laser with 4 watt of output power and 105/125 optical fiber coupling, and the thulium ion doped microchip crystal 130 adopts 5% thulium ion doping concentration and Tm with the length of 2.5 mm: YAG crystal, passive Q-switched crystal 140 is Cr2+ with a thickness of 1.5 mm: ZnS crystal, a plano-concave output mirror 150 adopts a concave surface curvature radius of 30mm and a transmittance at 1950nm of 5%, a seed source output optical fiber 170 adopts a passive double-clad optical fiber, a semiconductor laser 280 adopts a 940nm semiconductor laser with 20W and 105/125 optical fiber coupling output power, a large mode field erbium-ytterbium co-doped optical fiber 300 adopts a double-clad optical fiber and an optical fiber length of 4.5 m, the central wavelengths of a pair of high-reflection fiber grating 310 and low-reflection fiber grating 320 are 1565nm, the reflectivities at the central wavelengths are 99.9% and 90% respectively, a large mode field thulium-doped optical fiber 220 adopts a double-clad optical fiber and an optical fiber length of 4m, a multimode energy transmission optical fiber 270 adopts a 400/440 multimode optical fiber, the numerical aperture of the fiber core is 0.22, the experimental environment temperature is 25 ℃, the temperature of an amplifier in-band pumping source temperature control plate 360 is set to be 25 ℃, the temperature of a passive, finally, the maximum laser output obtained by the experiment exceeds 55W, the pulse width is about 240ns, the pulse repetition frequency is about 25kHz, the stable output state can be achieved after continuous operation for 10 minutes, and the stability of the output power within 4 hours is better than +/-2 percent.
For another example, the main device parameter configuration in the large mode field thulium optical fiber amplification unit II includes: the semiconductor laser 110 adopts a 793nm semiconductor laser with 6 watt of output power and 105/125 coupled optical fibers, and the thulium ion doped microchip crystal 130 adopts 5% of thulium ion doping concentration and Tm with the length of 4 mm: YLF crystal, passive Q-switched crystal 140 employs 2mm thick Cr2 +: CdSe crystal, the plano-concave output mirror 150 adopts 40mm concave curvature radius and the transmittance at 1940nm is 3%, the seed source output fiber 170 adopts passive double-clad fiber, the semiconductor laser 280 adopts 940nm semiconductor laser with 40W and 105/125 fiber coupling output power, the large mode field erbium-ytterbium co-doped fiber 300 adopts double-clad fiber and the fiber length is 5m, the central wavelength of a pair of high reflection fiber grating 310 and low reflection fiber grating 320 is 1565nm, the reflectivity at the central wavelength is 99.9% and 90% respectively, the large mode field thulium doped fiber 220 adopts double-clad fiber and the fiber length is 5m, the multimode energy transmission fiber 270 adopts 400/440 multimode fiber, the fiber core numerical aperture is 0.22, the experimental environment temperature is 25 ℃, the temperature of the temperature control plate 360 of the in-band pumping source of the amplifier is 25 ℃, the temperature control plate of the passive Q-switched microchip seed unit is 390 ℃, finally, the maximum laser output exceeds 105W, the pulse width is about 150ns, the pulse repetition frequency is about 50kHz, the stable output state can be achieved after continuous operation for 20 minutes, and the stability of the output power within 4 hours is better than +/-3 percent.
Considering the heat dissipation and heat management requirements of the main amplification system of the mixed mode pulse laser, the mixed mode pulse laser also comprises a fan module for forced air cooling; each amplifier is provided with an internal pumping source and is arranged on one side of the air inlet; the mixed mode pulse laser also comprises a radiating fin module, and the internal pumping source of each amplifier is in contact with the radiating fin module.
Optionally, the heat dissipation fin module includes an upper fin and a lower fin, and a lower surface of the upper fin is attached to an upper surface of the lower fin. Each amplifier is provided with an internal pumping source and a microchip pulse seed unit which are in contact with the upper surface of the upper-layer fin; the single-stage optical fiber amplifying unit is arranged in contact with the lower surface of the lower-layer fin through other optical devices except the in-band pumping source of each amplifier.
The mixed-mode medical pulse laser provided by this embodiment may also be distributed as a laser lower layer integrated plane III and a laser side distribution structure IV according to an integrated space.
Referring to the structural schematic diagram of the lower integrated surface of the mixed-mode medical pulse laser shown in fig. 3, it is shown that the lower integrated surface III includes four amplifier in-band pump sources 200, an amplifier in-band pump source drive board 350, an amplifier in-band pump source temperature control board 360, a laser central control board 370, a passive Q-switched microchip seed unit I, a passive Q-switched microchip seed unit drive board 380, a passive Q-switched microchip seed unit temperature control board 390, an optical fiber sorting disc 400, and an optical fiber transition hole 410. Referring to the structural diagram of the side distribution structure of the mixed-mode medical pulse laser shown in fig. 4, it is shown that the side distribution structure IV includes a fan module 420, a laser upper-layer fin module 430, and a laser lower-layer fin module 440.
The four amplifiers with the internal pumping source 200 have high heat loss and need to be uniformly distributed on one side of the air inlet so as to obtain the optimal heat dissipation effect, and the passive Q-switching microchip seed unit I has low overall heat loss and is arranged at the lower right corner of the lower integration surface III of the laser; the passive Q-switched microchip seed unit I and the output optical fibers of the four amplifier in-band pumping sources 200 are wound on an optical fiber sorting disc 400 and then reach the integrated surface of an upper-layer fin module 430 of the laser through an optical fiber transition hole 410.
The amplifier in-band pump source drive board 350 and the amplifier in-band pump source temperature control board 360 respectively provide constant current drive and accurate temperature control for the semiconductor lasers 280 in the four amplifier in-band pump sources 200; the passive Q-switched microchip seed unit drive board 380 and the passive Q-switched microchip seed unit temperature control board 390 respectively provide constant current drive and accurate temperature control for the semiconductor laser 110 in the passive Q-switched microchip seed unit I; the laser central control board 370 is respectively connected with the amplifier in-band pump source drive board 350, the amplifier in-band pump source temperature control board 360, the passive Q-switched microchip seed unit drive board 380 and the passive Q-switched microchip seed unit temperature control board 390 through electrical connection lines, and realizes the overall electronic control of the laser.
The fan module 420 comprises a plurality of fans and is used for carrying out forced convection cooling on the laser upper-layer fin module 430 and the laser lower-layer fin module 440, the air inlet range of the fan module 420 does not exceed the fin ranges of the laser upper-layer fin module 430 and the laser lower-layer fin module 440, the minimum wind resistance and the minimum thermal resistance are achieved, and the rotating speed of the fan module 420 is self-adaptive and is linearly related to the working current of the pumping source 200 in the amplifier band; the upper surface of the laser upper-layer fin module 430 is used for mounting and fixing all optical devices except the passive Q-switched microchip seed unit I and the four amplifier in-band pumping sources 200, and the lower surface of the laser upper-layer fin module 430 is attached to the upper surface of the laser lower-layer fin module 440; the lower surface of the laser lower fin module 440 is a laser lower integration plane III, and is used for mounting and fixing the passive Q-switched microchip seed unit I, the four amplifier in-band pump sources 200, and all electronic control units.
Due to severe temperature change of the use environment of the mixed mode medical pulse laser, relevant parameters of the temperature control plate 360 of the internal pumping source of the amplifier and the fan module 420 can be reconfigured, so that the working parameter consistency and the long-time working stability of the mixed mode medical pulse laser are improved, and the preheating time of the laser is shortened.
The mixed mode medical pulse laser provided by the embodiment realizes a 2-micron waveband laser with 100 watt-level average power and nanosecond pulse width by a passive Q-switched microchip seed source, a single-stage large-mode-field thulium optical fiber amplifier and an Er/Yb optical fiber laser in-band pumping combination scheme, wherein the fiber-coupled passive Q-switched microchip seed source has the advantages of small size, high output average power, narrow output pulse width, low cost and the like, and the heat loss in the thulium optical fiber amplifier can be greatly reduced by introducing the Er/Yb optical fiber laser in-band pumping, so that the long-term pulse stable operation of the amplifier under high power is ensured, and the single-stage large-mode-field thulium optical fiber amplifier becomes possible due to the guarantee of the high-power seed source and the in-band pumping mode, and the integrated manufacturing difficulty of the high-power pulse thulium optical fiber laser is greatly.
Through the scheme of combining the passive Q-switched microchip seed source, the single-stage large-mode-field thulium optical fiber amplifier and the Er/Yb optical fiber laser in-band pumping, the average output power of the pulse air-cooled thulium optical fiber laser can be increased to more than 100W, the integration complexity and the production cost of the whole machine are reduced through modular configuration, and the long-term stability of the system in working is improved. The nanosecond pulse laser output is realized through a passive Q-switching and microchip laser scheme, the main defects of high electromagnetic compatibility requirement, complex technical route in a semiconductor seed source modulation amplification scheme and the like of the traditional active Q-switching scheme are overcome, and the target high-power laser output can be directly obtained through a primary amplifier. The heat loss of a main amplification system is reduced through an 1560nm waveband laser in-band pumping large-mode field thulium optical fiber amplification structure, and long-term efficient heat management of the laser is guaranteed through details such as efficient multiplexing of double-layer cooling surfaces and reasonable installation and configuration of multiple medium-power semiconductor lasers.
The novel air-cooled 100-watt-level 2-micrometer pulse laser is characterized in that an innovative design is carried out on the problems of more amplification levels and larger heat loss in the traditional 790nm semiconductor laser pumping pulse thulium-doped fiber laser, so that a more compact and concise air-cooled 100-watt-level 2-micrometer pulse laser becomes possible, the novel air-cooled 100-watt-level 2-micrometer pulse laser is particularly suitable for integrated laser surgical treatment of soft and hard tissues in urology surgery, and meanwhile, the novel air-cooled 100-watt-level 2-micrometer pulse.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.
Finally, it should also be noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. A mixed mode pulse laser is characterized by comprising a microchip pulse seed unit and a single-stage optical fiber amplification unit;
the microchip pulse seed unit comprises a laser, a microchip crystal and a passive Q-switched crystal which are sequentially arranged; the microchip pulse seed unit is used for outputting pulse seed laser;
the single-stage optical fiber amplification unit comprises a large mode field optical fiber and a plurality of amplifier in-band pumping sources, and each amplifier in-band pumping source is used for pumping the large mode field optical fiber;
the single-stage optical fiber amplifying unit is used for amplifying the laser output by the microchip pulse seed unit and outputting the amplified laser.
2. The hybrid mode pulsed laser of claim 1, wherein said single stage fiber amplification unit further comprises a forward fiber combiner, at least one of said amplifier in-band pump sources pumping said large mode field fiber through said forward fiber combiner; and/or the presence of a gas in the gas,
the single-stage optical fiber amplifying unit further comprises a reverse optical fiber combiner, and at least one amplifier in-band pumping source pumps the large mode field optical fiber through the reverse optical fiber combiner.
3. The mixed mode pulsed laser of claim 1, further comprising a fan module for forced air cooling; each amplifier is provided with an internal pumping source and is arranged on one side of the air inlet; and/or the presence of a gas in the gas,
the amplifier further comprises radiating fin modules, and the in-band pumping sources of the amplifiers are arranged in contact with the radiating fin modules.
4. The hybrid mode pulsed laser of claim 1, wherein the microchip pulse seed unit further comprises: the device comprises a collimation focusing coupler, a plano-concave output mirror, a focusing coupler and a seed source output optical fiber;
the laser, the collimation focusing coupler, the microchip crystal, the passive Q-switched crystal, the plano-concave output mirror, the focusing coupler and the seed source output optical fiber are arranged in sequence.
5. The mixed mode pulsed laser of claim 1, wherein the amplifier in-band pump source comprises: the large mode field erbium ytterbium co-doped fiber, the laser and the fiber combiner;
the laser pumps the large mode field erbium ytterbium co-doped fiber through the fiber combiner.
6. The hybrid mode pulsed laser of claim 3, wherein the heat sink fin module comprises an upper layer of fins and a lower layer of fins; the lower surface of the upper layer fin is attached to the upper surface of the lower layer fin;
each amplifier is provided with an internal pumping source, and the microchip pulse seed unit is arranged in contact with the upper surface of the upper-layer fin;
and other optical devices of the single-stage optical fiber amplification unit except the in-band pumping source of each amplifier are arranged in contact with the lower surface of the lower-layer fin.
7. The hybrid mode pulse laser of claim 1, wherein the laser of the microchip pulse seed unit and the laser of the amplifier with the internal pumping source are both provided with a semiconductor refrigeration chip for temperature control.
8. The hybrid mode pulsed laser of claim 2, wherein the single stage fiber amplification unit further comprises a fiber-coupled isolator and/or a fiber mode field matching filter disposed before the forward fiber combiner.
9. The mixed mode pulsed laser of claim 2, wherein the single stage fiber amplification unit further comprises at least one of: the optical fiber coupler comprises a cladding optical filter, a high-power isolator, a multimode fiber coupler and a multimode energy transmission fiber.
10. A mixed-mode pulsed laser according to any one of claims 1 to 9,
the micro-sheet crystal is a thulium ion doped micro-sheet crystal, or,
the large mode field optical fiber is a large mode field thulium doped optical fiber, or,
the amplifier in-band pumping source is an erbium ytterbium fiber laser in-band pumping source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011150174.8A CN112350140A (en) | 2020-10-23 | 2020-10-23 | Mixed mode pulse laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011150174.8A CN112350140A (en) | 2020-10-23 | 2020-10-23 | Mixed mode pulse laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112350140A true CN112350140A (en) | 2021-02-09 |
Family
ID=74360140
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011150174.8A Pending CN112350140A (en) | 2020-10-23 | 2020-10-23 | Mixed mode pulse laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112350140A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113258422A (en) * | 2021-07-14 | 2021-08-13 | 武汉锐科光纤激光技术股份有限公司 | Seed source of pulse optical fiber laser and pulse adjusting method |
| CN115415673A (en) * | 2022-09-15 | 2022-12-02 | 浙江金洲激光科技有限公司 | Kilowatt-level high-power laser cleaning equipment |
| CN116487984A (en) * | 2023-05-15 | 2023-07-25 | 密尔医疗科技(深圳)有限公司 | Nonreciprocal phase shifter and laser |
| CN117589312A (en) * | 2024-01-16 | 2024-02-23 | 中国工程物理研究院激光聚变研究中心 | Wavelength following characteristic measuring device and method for semiconductor laser pumping source |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN200987035Y (en) * | 2006-12-30 | 2007-12-05 | 深圳市大族激光科技股份有限公司 | Wind cooled end surface pumped laser |
| CN102332672A (en) * | 2011-08-05 | 2012-01-25 | 厦门大学 | Tunable mid-infrared light source based on micro-chip laser and optical fibre amplifier |
| CN110838666A (en) * | 2018-08-17 | 2020-02-25 | 南京先进激光技术研究院 | Low-quantum-defect thin-chip laser and laser output method thereof |
| CN111262120A (en) * | 2020-01-22 | 2020-06-09 | 新沂市锡沂高新材料产业技术研究院有限公司 | Based on mix Nd3+Method for generating 1.8-micron waveband pulse laser of ceramic optical fiber |
| CN111478159A (en) * | 2020-04-12 | 2020-07-31 | 北京工业大学 | Temperature control system for internal device of solid laser |
| CN213278685U (en) * | 2020-10-23 | 2021-05-25 | 密尔医疗科技(深圳)有限公司 | Mixed mode pulse laser |
-
2020
- 2020-10-23 CN CN202011150174.8A patent/CN112350140A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN200987035Y (en) * | 2006-12-30 | 2007-12-05 | 深圳市大族激光科技股份有限公司 | Wind cooled end surface pumped laser |
| CN102332672A (en) * | 2011-08-05 | 2012-01-25 | 厦门大学 | Tunable mid-infrared light source based on micro-chip laser and optical fibre amplifier |
| CN110838666A (en) * | 2018-08-17 | 2020-02-25 | 南京先进激光技术研究院 | Low-quantum-defect thin-chip laser and laser output method thereof |
| CN111262120A (en) * | 2020-01-22 | 2020-06-09 | 新沂市锡沂高新材料产业技术研究院有限公司 | Based on mix Nd3+Method for generating 1.8-micron waveband pulse laser of ceramic optical fiber |
| CN111478159A (en) * | 2020-04-12 | 2020-07-31 | 北京工业大学 | Temperature control system for internal device of solid laser |
| CN213278685U (en) * | 2020-10-23 | 2021-05-25 | 密尔医疗科技(深圳)有限公司 | Mixed mode pulse laser |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113258422A (en) * | 2021-07-14 | 2021-08-13 | 武汉锐科光纤激光技术股份有限公司 | Seed source of pulse optical fiber laser and pulse adjusting method |
| CN113258422B (en) * | 2021-07-14 | 2021-10-22 | 武汉锐科光纤激光技术股份有限公司 | Seed source of pulse optical fiber laser and pulse adjusting method |
| CN115415673A (en) * | 2022-09-15 | 2022-12-02 | 浙江金洲激光科技有限公司 | Kilowatt-level high-power laser cleaning equipment |
| CN115415673B (en) * | 2022-09-15 | 2023-11-14 | 浙江金洲激光科技有限公司 | Kilowatt-level high-power laser cleaning equipment |
| CN116487984A (en) * | 2023-05-15 | 2023-07-25 | 密尔医疗科技(深圳)有限公司 | Nonreciprocal phase shifter and laser |
| CN117589312A (en) * | 2024-01-16 | 2024-02-23 | 中国工程物理研究院激光聚变研究中心 | Wavelength following characteristic measuring device and method for semiconductor laser pumping source |
| CN117589312B (en) * | 2024-01-16 | 2024-06-04 | 中国工程物理研究院激光聚变研究中心 | Wavelength following characteristic measuring device and method for semiconductor laser pumping source |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN112350140A (en) | Mixed mode pulse laser | |
| US9083140B2 (en) | High-power CW fiber-laser | |
| US8009708B2 (en) | Optical amplification module and laser light source apparatus | |
| CN213278685U (en) | Mixed mode pulse laser | |
| WO2000041278A1 (en) | Semiconductor-solid state laser optical waveguide pump device and method | |
| WO2007083110A1 (en) | High power short optical pulse source | |
| CN103208728A (en) | High-power pulse per second type ytterbium-doped all-fiber laser system | |
| CN113629482A (en) | Subnanosecond green laser | |
| CN105790052A (en) | Method of improving mid-infrared supercontinuum light source slope efficiency and output power | |
| CN103050874A (en) | High-power pulse type singe-frequency all-fiber laser system | |
| CN102299475B (en) | Narrow-linewidth single-transverse mode hundred watt level 2 micron thulium doped fiber laser with all-fiber structure | |
| CN111370986A (en) | Kilowatt-level optical fiber output nanosecond pulse laser | |
| CN101340053A (en) | Intermediate infrared thulium-doped optical fiber laser amplifier | |
| CN114552345A (en) | Optical path system of pulse fiber laser and laser | |
| JP2014517510A (en) | High-power single-mode fiber laser system with a wavelength operating in the 2μm range | |
| CN113594842A (en) | Device and method for generating ultrashort pulse of erbium-doped laser | |
| EP1649561A1 (en) | Eye safe high power fibre laser | |
| CN209169626U (en) | The gain switch laser of thulium-doped fiber laser pumping | |
| CN201243158Y (en) | Intermediate infrared thulium-doped optical fiber laser amplifier | |
| Zhang et al. | A compact high power laser-diode side-pumped Tm, Ho: YAG laser nearly at room temperature with intracavity Tm: YAG laser | |
| CN114944586A (en) | 1907nm single-mode polarization-maintaining all-fiber laser | |
| CN110165534B (en) | 1.6-1.7 micron wave band laser based on cascade frequency conversion | |
| EP1683241A2 (en) | High power 938 nanometer fiber laser and amplifier | |
| Yang et al. | 140 W high power all-fiber laser at 1940 nm with narrow spectral line-width by MOPA configuration | |
| Gong et al. | LD end-pumped single-ended bonding Tm: LuAG laser |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: 518122 Room 401, building C and 302, building a, No. 14, Kengzi Zhongxing Road, xiuxin community, Kengzi street, Pingshan District, Shenzhen City, Guangdong Province Applicant after: Mill medical technology (Shenzhen) Co.,Ltd. Address before: 518000 workshop 301, 11, No. 14, Zhongxing Road, xiuxin community, Kengzi street, Pingshan District, Shenzhen, Guangdong Applicant before: Mill medical technology (Shenzhen) Co.,Ltd. |
|
| CB02 | Change of applicant information |