CN117589312A - Wavelength following characteristic measuring device and method for semiconductor laser pumping source - Google Patents
Wavelength following characteristic measuring device and method for semiconductor laser pumping source Download PDFInfo
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
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- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
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Abstract
The invention discloses a wavelength following characteristic measuring device and a method for a semiconductor laser pumping source, which relate to the field of wavelength following characteristic measurement and are characterized in that the semiconductor laser pumping source to be measured generates pumping light; the pump light is used for gaining the gain optical fiber; the pump light which is not absorbed by the gain fiber is input into a reverse cladding light stripper; the seed source generates signal light, the signal light is amplified by the gain fiber, and the amplified signal light passes through the forward cladding light stripper; the system also comprises a data acquisition device and a data processing device connected with the data acquisition device; the data acquisition device is used for acquiring the optical signal passing through the forward cladding light stripper and the power supply current of the semiconductor laser pumping source to be tested; the data processing device is used for calculating the wavelength following characteristic of the semiconductor laser pumping source according to the optical signal and the power supply current passing through the forward cladding light stripper. The invention can improve the time resolution of the quantized wavelength following characteristic measurement.
Description
Technical Field
The invention relates to the field of wavelength following characteristic measurement, in particular to a wavelength following characteristic measurement device and method of a semiconductor laser pumping source.
Background
The fiber laser has the advantages of good beam quality, high efficiency, compact structure and the like, and has wide application prospect in a plurality of fields such as industry, national defense, scientific research, medical treatment and the like. The semiconductor laser pumping source (LD) is used as a key component of the fiber laser to provide pumping source for the laser, and the quality of the fiber laser, especially the wavelength range of the LD, is determined by the performance of the semiconductor laser pumping source, so that the photoelectric efficiency of the fiber laser is directly affected, and the thermal load of the fiber laser is also affected. The gain fiber is exemplified by a typical ytterbium-doped fiber (YDF for short), and has two absorption peaks in absorption spectrum, wherein the absorption coefficient of 976nm wave band is 2-3 times of 915nm wave band, but the absorption spectrum is relatively narrow, and the wavelength needs to be controlled, namely, the wave locking technology. The wavelength-following characteristics of an LD reflect the shift in wavelength over time of the LD at a particular operating current, as well as the time to reach the design wavelength. If the wavelength shift is blue-shifted or red-shifted relative to the design wavelength, this results in a decrease in fiber efficiency of the fiber laser. For example, when light is emitted for a long time and heat accumulation exists, the LD generates secondary waves in the long wave direction of the design value, and energy is transferred; when LD operates at less than rated current, there are some short wave direction secondary waves. The residual pump light causes the aggravation of the heat load of the system and the rapid rise of the heat flux density of related components, thereby bringing about the reduction of reliability, and the components can be burnt and the laser can be damaged in serious cases. On the other hand, if the time for reaching the designed wavelength is too long, the time for reaching the full power of the laser is prolonged, and the climbing time as long as several seconds or even tens of seconds is unfavorable for the application of the optical fiber laser in the scenes such as instantaneous high energy. Therefore, it is important to quantify the wavelength following characteristics of the LD, and guidance can be provided for designing and optimizing the wavelength shift of the LD, especially the wave locking capability of the wave locking LD. The wavelength-following characteristics of an LD can be subdivided into wavelength-following response time, LD locking capability, and capability of the LD pump light to be actually absorbed.
Currently, the wavelength-following characteristics reflecting LD are monitored mainly by spectrometers. The wavelength characteristics of the LD change over time, gradually shifting from the initial cool wavelength to the lock wavelength. In this process, the spectrometer records the wavelength shift over a range of wavelengths through multiple scans and stores, each scan and store for a time Δt. And calculating the energy duty ratio of the lock wave wavelength by processing the stored spectrum data, and when the energy duty ratio meets the requirement, the spectrum scanning frequency is N, and the wavelength following characteristic time is deltat.N. After the LD reaches the thermal equilibrium, the spectrum is basically stable, and the energy ratio of the locking wavelength is calculated by integrating the spectrum data to reflect the LD locking capacity.
The scanning mode of the spectrometer determines the characteristic interval delta t of each wavelength captured by the spectrometer each time, but the time of each scanning and storage of the spectrometer is long, often on the order of seconds, and the requirement on the wavelength following characteristic time is hundreds of seconds to tens of milliseconds, so that the conventional method cannot measure. If the scanning and storage time is shortened by reducing the sampling points (such as reducing the range and increasing the wavelength interval of the sampling points), the data information is lost and the calculation result is distorted. At present, the scanning mode for storing information is complete, and the scanning and storing time is about 850ms, which is far longer than the instantaneous high-energy requirement of users.
Secondly, when the LD has the secondary wave in the state of reaching the thermal equilibrium, the intensity of the secondary wave and the wavelength positions of the secondary wave are different for each LD, the absorption coefficient of the LD near the absorption peak is highest, the absorption coefficient of the deviation absorption peak is reduced but can be absorbed, and under the same wave locking capability, the pump absorption difference caused by the secondary wave is quantified, so that the unified standard is difficult to establish only through the spectrum data.
In addition, the initial time recorded by the spectrometer depends on manual operation of an operator, and if the scanning initial time of the spectrometer is not synchronous with the light emitting initial time of the pump source, incomplete spectrum data of the first scanning can be caused to influence data analysis. Therefore, it is necessary to build a wavelength following characteristic measuring device with higher time resolution, higher automation degree and more complete information collection.
Disclosure of Invention
The invention aims to provide a wavelength following characteristic measuring device and a method for a semiconductor laser pumping source, which can improve the time resolution of quantized wavelength following characteristic measurement.
In order to achieve the above object, the present invention provides the following solutions:
a wavelength-following characteristic measurement apparatus of a semiconductor laser pumping source, comprising: the seed source, the reverse cladding light stripper, the gain fiber and the forward cladding light stripper are sequentially arranged;
the semiconductor laser pumping source to be tested generates pumping light; the pump light is used for carrying out gain on the gain optical fiber; pump light which is not absorbed by the gain fiber is input into the reverse cladding light stripper;
the seed source generates signal light, the signal light is amplified by the gain optical fiber, and the amplified signal light passes through the forward cladding light stripper;
the wavelength following characteristic measuring device of the semiconductor laser pumping source further comprises a data acquisition device and a data processing device connected with the data acquisition device; the data acquisition device is used for acquiring an optical signal passing through the forward cladding light stripper and a power supply current of the semiconductor laser pumping source to be tested; the data processing device is used for calculating the wavelength following characteristic of the semiconductor laser pumping source according to the optical signal and the power supply current passing through the forward cladding light stripper.
Optionally, the wavelength following characteristic measuring device of the semiconductor laser pump source further comprises an output end cap; and signal light passing through the forward cladding light stripper is input into the output end cap.
Optionally, the wavelength following characteristic measuring device of the semiconductor laser pumping source further comprises a beam combiner; the buncher is arranged between the gain optical fiber and the forward cladding light stripper.
Optionally, the wavelength following characteristic measuring device of the semiconductor laser pump source further comprises a multimode beam splitter; the multimode beam splitter is arranged between the semiconductor laser pumping source to be tested and the beam buncher; pumping light generated by the semiconductor laser pumping source to be tested is input into the multimode beam splitter; the pump light passing through the multimode beam splitter is input into the beam combiner.
Optionally, the data acquisition device comprises a jumper end cap, a spectrometer, a power PD detector, a current clamp, an oscilloscope, a temperature detector and a temperature monitor;
the spectrometer is connected with the jumper end cap; the jumper end cap is used for receiving the pump light output by the multimode beam splitter; the power PD detector is used for detecting an optical signal passing through the forward cladding light stripper; the current clamp is used for detecting the power supply current; the oscilloscope is respectively connected with the power PD detector and the current clamp; the temperature detector is connected with the temperature monitor; the temperature detector is used for collecting the temperature of the reverse cladding light stripper; the spectrometer, the oscilloscope and the temperature monitor are all connected with the data processing device.
Optionally, the wavelength following characteristic measuring device of the semiconductor laser pumping source further comprises a first light receiving cylinder; the first light receiving cylinder is used for receiving the pump light output by the multimode beam splitter and generating diffuse reflection scattered light at the first light receiving cylinder; and the diffuse reflection scattered light generated at the first light receiving cylinder is transmitted to the jumper end cap.
Optionally, the wavelength following characteristic measuring device of the semiconductor laser pumping source further comprises a second light receiving cylinder; the second light receiving cylinder is used for receiving the signal light passing through the output end cap and generating diffuse reflection scattered light at the second light receiving cylinder; and the diffuse reflection scattered light generated at the second light receiving cylinder is transmitted to the power PD detector.
Optionally, the package housing of the reverse cladding light stripper is a metal housing.
The invention also provides a wavelength following characteristic measuring method of the semiconductor laser pumping source, which is applied to the wavelength following characteristic measuring device of the semiconductor laser pumping source, and comprises the following steps of:
acquiring an optical signal passing through a forward cladding light stripper and a power supply current of a semiconductor laser pumping source to be tested;
and determining the corresponding time of the wavelength following characteristic according to the optical signal passing through the forward cladding light stripper and the power supply current of the semiconductor laser pumping source to be tested.
According to the specific embodiment provided by the invention, the invention discloses the following technical effects:
the invention provides a wavelength following characteristic measuring device of a semiconductor laser pumping source, which comprises: the seed source, the reverse cladding light stripper, the gain fiber and the forward cladding light stripper are sequentially arranged; the semiconductor laser pumping source to be tested generates pumping light; the pump light is used for carrying out gain on the gain optical fiber; pump light which is not absorbed by the gain fiber is input into the reverse cladding light stripper; the seed source generates signal light, the signal light is amplified by the gain optical fiber, and the amplified signal light passes through the forward cladding light stripper; the wavelength following characteristic measuring device of the semiconductor laser pumping source further comprises a data acquisition device and a data processing device connected with the data acquisition device; the data acquisition device is used for acquiring an optical signal passing through the forward cladding light stripper and a power supply current of the semiconductor laser pumping source to be tested; the data processing device is used for calculating the wavelength following characteristic of the semiconductor laser pumping source according to the optical signal and the power supply current passing through the forward cladding light stripper. The time resolution of the quantized wavelength-following characteristic measurement is improved by a reverse cladding light stripper.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic diagram of a wavelength following characteristic measurement device of a semiconductor laser pump source provided by the invention.
Symbol description:
the device comprises a seed source-1, a reverse cladding light stripper-2, a gain optical fiber-3, a buncher-4, a forward cladding light stripper-5, an output end cap-6, a temperature detector-7, a power PD detector-8, a semiconductor laser pumping source-9 to be tested, a multimode beam splitter-10, a multimode beam splitter end cap-11, a jumper end cap-12, a first light receiving cylinder-13, a second light receiving cylinder-14 and a current clamp-15.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The invention aims to provide a wavelength following characteristic measuring device and a method for a semiconductor laser pumping source, which can improve the time resolution of quantized wavelength following characteristic measurement.
In order that the above-recited objects, features and advantages of the present invention will become more readily apparent, a more particular description of the invention will be rendered by reference to the appended drawings and appended detailed description.
As shown in fig. 1, the wavelength following characteristic measuring device of a semiconductor laser pump source provided by the present invention includes: the seed source 1, the reverse cladding light stripper 2, the gain optical fiber 3 and the forward cladding light stripper 5 are sequentially arranged; the semiconductor laser pump source 9 to be tested generates pump light; the pump light is used for performing gain on the gain optical fiber 3; pump light not absorbed by the gain fiber 3 is input to the reverse cladding light stripper 2; the seed source 1 generates signal light, the signal light is amplified by the gain optical fiber 3, and the amplified signal light passes through the forward cladding light stripper 5; the wavelength following characteristic measuring device of the semiconductor laser pumping source further comprises a data acquisition device and a data processing device connected with the data acquisition device; the data acquisition device is used for acquiring the optical signal passing through the forward cladding light stripper 5 and the power supply current of the semiconductor laser pumping source 9 to be tested; the data processing device is used for calculating the wavelength following characteristic of the semiconductor laser pumping source according to the optical signal and the power supply current passing through the forward cladding light stripper 5.
The wavelength following characteristic measuring device of the semiconductor laser pumping source also comprises an output end cap 6; the signal light passing through the forward cladding light stripper 5 is input to the output end cap 6.
The wavelength following characteristic measuring device of the semiconductor laser pumping source also comprises a buncher 4; the bundling device 4 is arranged between the gain optical fiber 3 and the forward cladding light stripper 5.
The wavelength following characteristic measuring device of the semiconductor laser pumping source further comprises a multimode beam splitter 10; the multimode beam splitter 10 is arranged between the semiconductor laser pumping source 9 to be tested and the beam combiner 4; pump light generated by the semiconductor laser pump source 9 to be tested is input into the multimode beam splitter 10; the pump light passing through the multimode beam splitter 10 is inputted into the beam combiner 4.
The data acquisition device comprises a jumper end cap 12, a spectrometer, a power PD detector 8, a current clamp 15, an oscilloscope, a temperature detector 7 and a temperature monitor; the spectrometer is connected with the jumper end cap 12; the jumper end cap 12 is used for receiving the pump light output by the multimode beam splitter 10; the power PD detector 8 is configured to detect an optical signal passing through the forward cladding light stripper 5; the current clamp 15 is used for detecting the power supply current; the oscillograph is respectively connected with the power PD detector 8 and the current clamp 15; the temperature detector 7 is connected with the temperature monitor; the temperature detector 7 is used for collecting the temperature of the reverse cladding light stripper 2; the spectrometer, the oscilloscope and the temperature monitor are all connected with the data processing device. A power PD detector 8 may also be mounted over the fiber between the forward CPS and QBH for detecting the signal light leaking from the fiber cladding.
The wavelength following characteristic measuring device of the semiconductor laser pumping source further comprises a first light receiving cylinder 13; the first light receiving barrel 13 is configured to receive the pump light output through the multimode beam splitter 10; and generates diffuse reflection scattered light at the first light receiving cylinder 13; diffuse reflected scattered light generated at the first light receiving cylinder 13 is transmitted to the jumper end cap 12.
The wavelength following characteristic measuring device of the semiconductor laser pumping source further comprises a second light receiving cylinder 14; the second light receiving cylinder 14 is used for receiving the signal light passing through the output end cap 6 and generating diffuse reflection scattered light at the second light receiving cylinder 14; the diffuse reflection scattered light generated at the second light receiving cylinder 14 is transmitted to the power PD detector 8.
The package housing of the reverse cladding light stripper 2 is a metal housing, in particular a dark metal housing.
The measuring device of the invention is composed of a measuring light path system, a power supply module, a data acquisition device and a data processing module.
The measuring optical path system is composed of a seed source 1, a high-power reverse cladding light stripper 2 (hereinafter referred to as reverse CPS), a gain optical fiber 3YDF, a forward cladding light stripper 5 (hereinafter referred to as forward CPS), a cluster 4, an output end cap 6 (hereinafter referred to as QBH), a multimode beam splitter 10 and a multimode beam splitter end cap 11. The devices are all arranged on the heat dissipation plate, so that heat consumption generated by the devices can be timely taken away. The seed source 1 provides signal light with a wide spectrum and proper power for the amplification of a subsequent optical module.
The measuring light path system adopts a fiber laser scheme (oscillation and amplification) of MOPA, and the seed source 1 provides a signal source with proper line width and power for the subsequent optical module. The LD pump light enters the gain fiber 3YDF through the beam combiner 4, the gain fiber 3 is a gain medium with a wider absorption spectrum, the LD pump light is absorbed by the gain fiber 3 to realize the population inversion, and the energy of the pump light is converted into the signal light with the same wavelength as the seed source 1. The absorption cross section of the gain fiber 3 varies with the wavelength, and there are several peaks, the wavelength deviates from the peak, and the absorption cross section drops rapidly. The LD output spectrum is not a single wavelength, and the output power is distributed along with the wavelength, so after the YDF, there is always pumping light not absorbed by the YDF, and this part of the non-absorbed residual pumping light is transmitted to the seed source 1, so as to prevent the residual pumping light from damaging the seed source 1, and a reverse cladding light stripper 2 (reverse CPS) is added to strip the residual pumping light. The residual pump light after stripping can cause the temperature rise of the device shell, and the more the power is stripped, the higher the temperature rise is.
The semiconductor laser pump source 9 to be tested passes through the multimode beam splitter 10, a small part of energy is output through the end cap after passing through the port1, and the output light is received by the first light receiving cylinder 13.
The LD enters the beam combiner 4 through most of the energy of the multimode beam splitter 10port2, and the power of the absorption peak and the nearby power is fully absorbed through the YDF, and the power of the non-absorbed wave band is stripped by the high-power reverse CPS after passing through the YDF, so that damage to the seed source 1 is avoided.
The signal light is transmitted from left to right, and the seed source 1 supplies small signal light, and is amplified after passing through the gain fiber 3. After entering the combiner 4, the pump light is transmitted from right to left, providing a pump source for the gain fiber 3, and the unabsorbed pump light enters the reverse CPS and is stripped off and diverges around in the form of leakage light. The combiner 4 may inject LD pump light into the gain fiber 3 YDF. The gain fiber 3 absorbs the pump light and can convert the pump light into signal light.
The pumping power provided by the LD amplifies the signal light of the seed source 1 through the gain fiber 3, and the amplified signal light is stripped by the pump light through the forward CPS and is received by the second light receiving cylinder 14 through the QBH.
The pump light amplifies the signal light of the seed source 1 through the gain fiber 3. The gain fiber 3 is rare earth doped fiber, has wider absorption spectrum and emission spectrum, the wavelength of pump light is positioned between the absorption spectrum, and is absorbed by the gain fiber 3, and the gain fiber 3 converts energy into light energy consistent with the wavelength of a signal source due to the fact that the particle energy level transition realizes the particle number inversion, so that the amplification of the signal source is realized. The QBH prevents the signal light from generating back light, avoids the signal light from being transmitted in the opposite direction to damage the measurement system, and simultaneously enables the laser signal light to be output in the form of light spots so as to be transmitted in space.
The power supply module consists of two parts, namely a seed source module and a semiconductor laser pumping source power supply module to be tested. The seed source module is connected with the seed source 1, and the semiconductor laser pumping source power supply module to be tested is connected with the semiconductor laser pumping source 9 to be tested.
The data acquisition device consists of a jumper end cap, a spectrometer, a power PD detector 8, a current clamp 15, an oscilloscope and a temperature detector 7 and a temperature monitor.
After the first light receiving cylinder 13 receives the pump light, the generated diffuse reflection scattered light enters the jumper end cap 12, and spectrum information is collected by the spectrometer. The jumper wire is a connecting wire capable of transmitting light and connecting equipment, and end caps at two ends of the jumper wire are used for receiving space light and connecting equipment. Here diffuse reflected light is coupled into the spectrometer.
After the second light receiving cylinder 14 receives the optical signal, the generated diffuse reflection scattered light enters the power PD detector 8 and information is collected to the oscilloscope channel 2 (CH 2); the power PD detector 8 converts the detected optical signal into an electric signal, and the electric signal is connected to an oscilloscope to reflect the intensity of the detected optical signal according to the voltage.
The current clamp 15 detects the current of the power supply wire of the semiconductor laser pumping source 9 to be tested, and collects information to the oscilloscope channel 1 (CH 1). The current clamp 15 is connected to an oscilloscope, and the voltage of the oscilloscope reflects the current supplied to the LD.
The high power back CPS package housing is a metal housing, so that after the stripped pump light is scattered in space, most of the light is absorbed by the housing to generate heat, which is collected to the temperature monitor by the temperature detector 7.
The housing of the high power reverse CPS, which is detected here as a temperature rise due to heat absorption. The power of the stripped pump light is indirectly reflected by the low temperature rise.
And information collected by the spectrometer, the temperature monitor and the oscilloscope is transmitted to the industrial personal computer through a communication line or a network cable and the like, and data processing is carried out.
The invention also provides a wavelength following characteristic measuring method of the semiconductor laser pumping source, which is applied to the wavelength following characteristic measuring device of the semiconductor laser pumping source, and comprises the following steps of: acquiring an optical signal passing through a forward cladding light stripper and a power supply current of a semiconductor laser pumping source to be tested; and determining the corresponding time of the wavelength following characteristic according to the optical signal passing through the forward cladding light stripper and the power supply current of the semiconductor laser pumping source to be tested. The wavelength-following characteristic reflects the amount of shift in wavelength over time of the LD at a particular operating current, as well as the time to reach the designed wavelength. The wavelength-following characteristics of an LD can be subdivided into wavelength-following response time, LD locking capability (energy ratio of locking wavelength), and capability of LD pump light to be actually absorbed.
In practical application, the wavelength following characteristic measuring method of the semiconductor laser pumping source provided by the invention comprises the following implementation steps:
1) The power supply module supplies power to the seed source to obtain proper signal light.
2) The reverse CPS temperature T0 at this time was recorded.
3) And setting proper parameters of a spectrometer and an oscilloscope. And starting the semiconductor laser pumping source to be tested to 10% of power, adjusting the distance between the jumper end cap and the first light receiving cylinder, enabling the signal-to-noise ratio of the pumping light collected by the spectrometer to be greater than 15dB, and setting a proper required spectrum range.
The distance between the PD detector and the second light receiving cylinder is regulated, the voltage amplitude interval is controlled to be 200mV-500mV, the voltage amplitude of the waveform on the oscilloscope is ensured to be increased by about 5% compared with that of the single-opening seed source, the waveform position is regulated, the waveform is ensured to be positioned at about one fifth of the display screen of the oscilloscope, and the time interval is regulated to be 200 ms-1 s as required. And after parameters of the spectrometer and the oscilloscope are set, closing the power supply of the semiconductor laser pumping source to be tested.
4) And (3) starting the one-key light emission of the semiconductor laser pumping source to be tested to a specified current, enabling the oscilloscope to display the waveform to quickly climb from a low amplitude to a high amplitude, scanning the spectrum and storing the spectrum when the power is stable, recording the temperature T of the temperature monitor, pressing an oscilloscope stop acquisition button, and closing the LD power supply. In the process, the whole process of the waveform climbing process acquired by the oscillograph is ensured, and the acquisition time can be prolonged by adjusting the time interval if required.
5) And processing the data. And calculating that the rising edge time (up to 90% of peak power) of the CH1 channel is t1, and the rising edge time of the CH2 channel is t2, wherein the corresponding time of the wavelength following characteristic is t2-t1, and the parameter can represent the response time of reaching the wavelength of the locked wave after the LD emits light by one key.
The LD wave locking capacity in the thermal balance state can be quantified by calculating the energy ratio of the spectrum wave locking wavelength.
The spectral data collected is the distribution of light intensity with respect to wavelengthWherein, the spectrum data at the first light receiving cylinder is specifically, the upper limit and the lower limit of the collected spectrum range are respectively +.>、/>The peak wavelength of the lock is->Defined as->Within the range of lock wave (offset relative to peak wavelength +.>Generally 1nm-3nm, and setting the locking standard according to the absorption peak characteristic of the gain fiber), the energy ratio of spectrum locking wavelength is +.>The method comprises the following steps:
the reverse CPS temperature rise T-T0 is calculated, and the actual absorbable capability of LD pump light can be quantified.
The invention can calculate the response time of the LD wavelength following characteristic, and the time can be accurate to the ms order or even shorter, thereby meeting the requirement of users on the increasingly severe response time of the LD wavelength following characteristic. The corresponding time buckle of the wavelength following characteristic is calculated, so that the time delay caused by the loading of the power supply current is eliminated, the self characteristic of the LD can be reflected, and the quick response capability of the LD is accurately depicted. The capability that LD pump light can be actually absorbed can be quantified through reverse CPS temperature rise T-T0, and LD with the same type and specification can be better compared and screened. The absorption coefficient of the LD near the absorption peak is highest, and the absorption coefficient of the LD is reduced but can be absorbed, so that the LD can be better screened, and the LD is better screened when the LD pump light can be quantized. The detection mode of the traditional spectrometer is reserved, the spectrum information, particularly the spectrum information after heat balance, can be recorded at the same time, and the wave locking capability of the LD in a stable working state can be reflected.
In the present specification, each embodiment is described in a progressive manner, and each embodiment is mainly described in a different point from other embodiments, and identical and similar parts between the embodiments are all enough to refer to each other.
The principles and embodiments of the present invention have been described herein with reference to specific examples, the description of which is intended only to assist in understanding the methods of the present invention and the core ideas thereof; also, it is within the scope of the present invention to be modified by those of ordinary skill in the art in light of the present teachings. In view of the foregoing, this description should not be construed as limiting the invention.
Claims (9)
1. A wavelength-following characteristic measurement apparatus of a semiconductor laser pump source, comprising: the seed source, the reverse cladding light stripper, the gain fiber and the forward cladding light stripper are sequentially arranged;
the semiconductor laser pumping source to be tested generates pumping light; the pump light is used for carrying out gain on the gain optical fiber; pump light which is not absorbed by the gain fiber is input into the reverse cladding light stripper;
the seed source generates signal light, the signal light is amplified by the gain optical fiber, and the amplified signal light passes through the forward cladding light stripper;
the wavelength following characteristic measuring device of the semiconductor laser pumping source further comprises a data acquisition device and a data processing device connected with the data acquisition device; the data acquisition device is used for acquiring an optical signal passing through the forward cladding light stripper and a power supply current of the semiconductor laser pumping source to be tested; the data processing device is used for calculating the wavelength following characteristic of the semiconductor laser pumping source according to the optical signal and the power supply current passing through the forward cladding light stripper.
2. The device for measuring the wavelength-following characteristics of a semiconductor laser pump source according to claim 1, further comprising an output end cap; and signal light passing through the forward cladding light stripper is input into the output end cap.
3. The apparatus for measuring the wavelength-following characteristics of a semiconductor laser pump source according to claim 2, further comprising a combiner; the buncher is arranged between the gain optical fiber and the forward cladding light stripper.
4. The device for measuring the wavelength-following characteristics of a semiconductor laser pump source according to claim 3, further comprising a multimode beam splitter; the multimode beam splitter is arranged between the semiconductor laser pumping source to be tested and the beam buncher; pumping light generated by the semiconductor laser pumping source to be tested is input into the multimode beam splitter; the pump light passing through the multimode beam splitter is input into the beam combiner.
5. The device of claim 4, wherein the data acquisition device comprises a jumper end cap, a spectrometer, a power PD detector, a current clamp, an oscilloscope, a temperature detector, and a temperature monitor;
the spectrometer is connected with the jumper end cap; the jumper end cap is used for receiving the pump light output by the multimode beam splitter; the power PD detector is used for detecting an optical signal passing through the forward cladding light stripper; the current clamp is used for detecting the power supply current; the oscilloscope is respectively connected with the power PD detector and the current clamp; the temperature detector is connected with the temperature monitor; the temperature detector is used for collecting the temperature of the reverse cladding light stripper; the spectrometer, the oscilloscope and the temperature monitor are all connected with the data processing device.
6. The device for measuring the wavelength-following characteristics of a semiconductor laser pump source according to claim 5, further comprising a first light receiving cylinder; the first light receiving cylinder is used for receiving the pump light output by the multimode beam splitter and generating diffuse reflection scattered light at the first light receiving cylinder; and the diffuse reflection scattered light generated at the first light receiving cylinder is transmitted to the jumper end cap.
7. The device for measuring the wavelength-following characteristics of a semiconductor laser pump source according to claim 5, further comprising a second light receiving cylinder; the second light receiving cylinder is used for receiving the signal light passing through the output end cap and generating diffuse reflection scattered light at the second light receiving cylinder; and the diffuse reflection scattered light generated at the second light receiving cylinder is transmitted to the power PD detector.
8. The apparatus according to claim 1, wherein the package housing of the reverse cladding light stripper is a metal housing.
9. A method for measuring the wavelength following characteristics of a semiconductor laser pump source, wherein the method for measuring the wavelength following characteristics of the semiconductor laser pump source is applied to the device for measuring the wavelength following characteristics of the semiconductor laser pump source according to any one of claims 1 to 8, and the method for measuring the wavelength following characteristics of the semiconductor laser pump source comprises the steps of:
acquiring an optical signal passing through a forward cladding light stripper and a power supply current of a semiconductor laser pumping source to be tested;
and determining the corresponding time of the wavelength following characteristic according to the optical signal passing through the forward cladding light stripper and the power supply current of the semiconductor laser pumping source to be tested.
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