CN110838666A - Low-quantum-defect thin-chip laser and laser output method thereof - Google Patents
Low-quantum-defect thin-chip laser and laser output method thereof Download PDFInfo
- Publication number
- CN110838666A CN110838666A CN201810937994.8A CN201810937994A CN110838666A CN 110838666 A CN110838666 A CN 110838666A CN 201810937994 A CN201810937994 A CN 201810937994A CN 110838666 A CN110838666 A CN 110838666A
- Authority
- CN
- China
- Prior art keywords
- laser
- resonant cavity
- laser beam
- mirror
- thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 20
- 238000010168 coupling process Methods 0.000 claims abstract description 15
- 238000005859 coupling reaction Methods 0.000 claims abstract description 15
- 230000008878 coupling Effects 0.000 claims abstract description 14
- 230000007547 defect Effects 0.000 claims abstract description 11
- 239000013078 crystal Substances 0.000 claims description 19
- 238000005086 pumping Methods 0.000 claims description 13
- 239000002245 particle Substances 0.000 claims description 9
- 230000010355 oscillation Effects 0.000 claims description 6
- 238000002834 transmittance Methods 0.000 claims description 6
- 238000002310 reflectometry Methods 0.000 description 4
- 238000002207 thermal evaporation Methods 0.000 description 3
- 239000002918 waste heat Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 241001270131 Agaricus moelleri Species 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0602—Crystal lasers or glass lasers
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Lasers (AREA)
Abstract
The invention provides a thin-chip laser with low quantum defect, which comprises: the first resonant cavity comprises a dichroic mirror, a first slice gain module and a second slice gain module; a second resonant cavity comprising a 1030nm/1048nm high reflection mirror and a coupling output mirror, the second resonant cavity sharing the first sheet gain module with the first resonant cavity; the first resonator produces 1030nm laser light which pumps the first gain slice gain module to cause population inversion, so that the second resonator oscillates and 1048nm laser beams are output from the coupling-out mirror. A laser output method is also provided. The device and the method have the advantages of low energy quantum loss, good light beam quality and high output power.
Description
Technical Field
The invention relates to a thin-chip laser, in particular to a thin-chip laser with low quantum defect.
Background
The thin-chip laser is an important development direction of the current high-average power laser, the heat dissipation characteristic of a laser medium is an important factor influencing the development of the high-power laser, the thin-chip laser adopts a crystal with the thickness of 100-; in addition, the structure can generate almost uniform axial one-dimensional heat flow which is vertical to the surface of the thin-sheet laser gain medium under the back cooling technology and the end-plane flat-top pumping light, so that the thermal lens effect and the thermal deposition in the gain medium can be reduced, and high efficiency and high beam quality are kept while high-power laser output is obtained.
For high power lasers, in order to obtain higher average power output of laser light, it is necessary to minimize the generation of waste heat in the gain medium, or to adopt a better heat dissipation structure so as to lead the waste heat generated in the crystal out of the crystal in time. From the viewpoint of reducing waste heat generation, a method of directly exciting ground-state particles to an upper level of laser light, so-called in-band pumping, is generally employed; from the aspect of increasing the heat conductivity, on one hand, amplification structures with large area and volume such as optical fibers, INNOSLAB and thin-plate structures can be used as laser gain media, and on the other hand, diamond with higher heat conductivity coefficient can be used for thin-plate lasers to replace copper-tungsten alloy as heat conduction materials between a heat sink and a crystal.
For thin-chip lasers, the commonly used and more mature gain medium is a Yb: YAG crystal, for which the absorption peaks are mainly concentrated at 940nm, 969nm and 1030 nm. The wavelengths of 940nm and 969nm are common for commercially pumped LDs, and since the absorption peak of the Yb: YAG crystal is relatively wide near 940nm and narrow near 969nm, the 940nm pump generally does not need wavelength control, and the 969nm corresponding LD needs to add a VBG module to perform wavelength locking on the output light. The use of conventional 940nm pumping at low power and 969nm does not differ much, but for 940nm pumping, a gradual increase in heat build-up with increasing pump power will degrade the wavefront of the laser and change the stability of the cavity, thus degrading the output beam quality of the laser and limiting further increases in laser power. In order to obtain higher average laser power output, a 969nm VBG wavelength-locked LD can be used as a pumping source of a Yb: YAG thin-chip laser, particles in a ground state can be directly pumped to an upper laser energy level by adopting the scheme, the quantum loss of a laser gain crystal is reduced, and higher laser output than that of a traditional 940nm pump can be obtained by adopting the scheme, however, the laser output power is limited by the power of the 969nm pump LD.
Paper (S)
M,Miura T,Chyla M,et al.Suppression of nonlinear phononrelaxation in Yb:YAG thin disk via zero phonon line pumping[J]In Opticslets, 2014,39(16): 4919-. The common characteristics are as follows: when the surface temperature of the crystal reaches about 100 ℃ in the state of outputting laser, no light is emitted from the laser cavity.
Disclosure of Invention
The invention mainly solves the technical problem of providing a low quantum defect thin-chip laser with low energy quantum defect, good beam quality and high output power. In order to solve the technical problems, the invention adopts a technical scheme that: a low quantum defect thin-chip laser, comprising:
the first resonant cavity comprises a dichroic mirror, a first slice gain module and a second slice gain module; pumping the second slice gain module by using an LD of 940nm, wherein the dichroscope reflects a laser beam of 1030nm and has a transmittance of greater than 55% for a laser beam of 1048nm, so that the laser beam of 1030nm oscillates repeatedly in the first resonant cavity, the laser power density of the laser beam is improved, and the laser beam is absorbed by the first slice gain module in the process of repeated oscillation, thereby reversing the number of laser particles;
a second resonant cavity comprising a 1030nm/1048nm high reflection mirror and a coupling output mirror, the second resonant cavity sharing the first sheet gain module with the first resonant cavity; and the laser particle number enters the second resonant cavity after being inverted, and a 1048nm laser beam is output from the coupling output mirror after the second resonant cavity oscillates.
In one embodiment, the first and second sheet gain modules are Yb: YAG sheet crystals.
In one embodiment, the out-coupling mirror highly reflects the 1030nm laser beam and outputs the 1048nm laser beam.
A laser output method of the thin-chip laser with low quantum defect as described above, comprising:
pumping a second slice gain module in the first resonant cavity by using an LD of 940nm, and making the laser beam of 1030nm highly reflected and the transmittance of the laser beam of 1048nm greater than 55% by using the dichroic mirror, so that the laser beam of 1030nm repeatedly oscillates in the first resonant cavity to improve the power density of the laser beam of 1030nm in the first resonant cavity;
the first resonant cavity generates 1030nm laser to pump the first gain thin slice gain module, population inversion occurs to the thin slice crystal, so that the second resonant cavity generates oscillation, and 1048nm laser beams are output from the coupling output mirror.
In one embodiment, the first and second sheet gain modules are Yb: YAG sheet crystals.
In one embodiment, the laser beam is reflected off the 1030nm laser beam via the coupling-out mirror and outputs a 1048nm laser beam.
In the thin-chip laser with low quantum loss and the laser output method, a first thin-chip gain module is used as an end mirror of a resonant cavity, a second thin-chip gain module is used as a folding mirror, a dichroscope with high reflectivity of 1030nm and reflectivity of 1048nm being less than 45% is used as a cavity mirror, and 940nmLD is used for pumping the second thin-chip gain module, so that the resonant cavity enables the laser with 1030nm to oscillate in the cavity all the time, the laser power density in the cavity is enabled to be extremely high, and the laser is absorbed by the first thin-chip gain module in the process of reciprocating in the cavity, and the population inversion of the laser is obtained. And a lens with high reflection at 1030nm and transmission at 1048nm is used as a coupling output mirror, and the three modules form a second resonant cavity, so that the output of the laser at 1048nm is obtained through the coupling output mirror. In the structure and the method, the pump quantum efficiency is higher to reduce the thermal deposition of the laser crystal, so that higher laser power output is obtained.
Drawings
Fig. 1 is a schematic diagram of a low quantum defect thin-chip laser structure according to an embodiment.
In the figure, 1-dichroic mirror (1030nm high reflection, R (1048nm) < 45%), 2-second chip gain module, 3-first chip gain module, 4-high reflection mirror, 5-coupled output mirror.
Detailed Description
Referring to fig. 1, a low quantum defect thin-chip laser according to an embodiment of the present invention includes: 1-dichroic mirror (1030nm high reflection, R (1048nm) < 45%), 2-second chip gain module, 3-first chip gain module, 4-high reflection mirror, 5-coupled output mirror.
Specifically, in one embodiment, the dichroic mirror 1, the first sheet gain module 3, and the second sheet gain module 2 constitute a first resonant cavity. And the 940nm LD is adopted to pump the second sheet gain module 2, the dichroscope 1 has high reflection to the 1030nm laser beam and has a transmittance of more than 55% to the 1048nm laser beam, so that the 1030nm laser beam oscillates repeatedly in the first resonant cavity, the laser power density of the laser beam is improved, and the laser beam is absorbed by the first sheet gain module 3 in the repeated oscillation process, thereby the number of laser particles is reversed.
Specifically, in one embodiment, the first slice gain module 3, the high reflection mirror 4, and the coupling-out mirror 5 form a second resonant cavity. The high reflection mirror 4 is a 1030nm/1048nm high reflection mirror, and the coupling output mirror 5 can enable a 1030nm laser beam to be highly reflected and output a 1048nm laser beam. The second cavity shares the first slice gain block 3 with the first cavity. And the laser particle number enters the second resonant cavity after being inverted, and a 1048nm laser beam is output from the coupling output mirror after the second resonant cavity oscillates.
In one embodiment, the first and second sheet gain modules 3 and 2 are Yb: YAG sheet crystals.
A laser output method of the thin-chip laser with low quantum defect as described above, comprising:
s110, pumping a second slice gain module in the first resonant cavity by adopting an LD (laser diode) of 940nm, highly reflecting a laser beam of 1030nm through a dichroic mirror, and enabling the transmittance of the laser beam of 1048nm to be more than 55%, so that the laser beam of 1030nm repeatedly oscillates in the first resonant cavity to improve the power density of the laser of 1030nm in the first resonant cavity;
in one embodiment, the first and second sheet gain modules are Yb: YAG sheet crystals.
And S110, the first resonant cavity generates 1030nm laser to pump the first gain slice gain module, population inversion is carried out on the slice crystal, so that the second resonant cavity generates oscillation, and 1048nm laser beams are output from the coupling output mirror.
In one embodiment, the laser beam is reflected off the 1030nm laser beam via the coupling-out mirror and outputs a 1048nm laser beam.
The specific structure of the thin-film laser has been described in detail above, and will not be described in detail herein.
In the thin-chip laser with low quantum loss and the laser output method, a first thin-chip gain module is used as an end mirror of a resonant cavity, a second thin-chip gain module is used as a folding mirror, a dichroscope with high reflectivity of 1030nm and reflectivity of 1048nm being less than 45% is used as a cavity mirror, 940nmLD is used for pumping the second thin-chip gain module, the resonant cavity enables the laser with 1030nm to oscillate in the cavity all the time, so that the laser power density in the cavity is extremely high, and the laser is absorbed by the first thin-chip gain module in the process of reciprocating in the cavity, so that the number of particles of the laser is inverted. And a lens with high reflection at 1030nm and transmission at 1048nm is used as a coupling output mirror, and the three modules form a second resonant cavity, so that the output of the laser at 1048nm is obtained through the coupling output mirror. In the structure and the method, the pump quantum efficiency is higher to reduce the thermal deposition of the laser crystal, so that higher laser power output is obtained.
The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications of equivalent structures and equivalent processes, which are made by using the contents of the present specification and the accompanying drawings, or directly or indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (6)
1. A low quantum defect thin-chip laser, comprising:
the first resonant cavity comprises a dichroic mirror, a first slice gain module and a second slice gain module; pumping the second slice gain module by using an LD of 940nm, wherein the dichroscope reflects a laser beam of 1030nm and has a transmittance of greater than 55% for a laser beam of 1048nm, so that the laser beam of 1030nm oscillates repeatedly in the first resonant cavity, the laser power density of the laser beam is improved, and the laser beam is absorbed by the first slice gain module in the process of repeated oscillation, thereby reversing the number of laser particles;
a second resonant cavity comprising a 1030nm/1048nm high reflection mirror and a coupling output mirror, the second resonant cavity sharing the first sheet gain module with the first resonant cavity; and the laser particle number enters the second resonant cavity after being inverted, and a 1048nm laser beam is output from the coupling output mirror after the second resonant cavity oscillates.
2. The thin chip laser of claim 1, wherein the first and second thin chip gain modules are Yb: YAG thin chip crystals.
3. The wafer laser of claim 1, wherein the coupling-out mirror causes the 1030nm laser beam to be highly reflective and outputs a 1048nm laser beam.
4. A method of lasing a low quantum defect thin-chip laser as claimed in any of claims 1 to 3, comprising:
pumping a second slice gain module in the first resonant cavity by using an LD of 940nm, and making the laser beam of 1030nm highly reflected and the transmittance of the laser beam of 1048nm greater than 55% by using the dichroic mirror, so that the laser beam of 1030nm repeatedly oscillates in the first resonant cavity to improve the power density of the laser beam of 1030nm in the first resonant cavity;
the first resonant cavity generates 1030nm laser to pump the first gain thin slice gain module, population inversion occurs to the thin slice crystal, so that the second resonant cavity generates oscillation, and 1048nm laser beams are output from the coupling output mirror.
5. The laser output method of claim 4, wherein the first and second sheet gain modules are Yb: YAG sheet crystals.
6. The laser output method according to claim 4, wherein the laser beam highly reflects the 1030nm laser beam through the coupling-out mirror and outputs a 1048nm laser beam.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810937994.8A CN110838666A (en) | 2018-08-17 | 2018-08-17 | Low-quantum-defect thin-chip laser and laser output method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810937994.8A CN110838666A (en) | 2018-08-17 | 2018-08-17 | Low-quantum-defect thin-chip laser and laser output method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110838666A true CN110838666A (en) | 2020-02-25 |
Family
ID=69573450
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810937994.8A Pending CN110838666A (en) | 2018-08-17 | 2018-08-17 | Low-quantum-defect thin-chip laser and laser output method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110838666A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112350140A (en) * | 2020-10-23 | 2021-02-09 | 密尔医疗科技(深圳)有限公司 | Mixed mode pulse laser |
| CN114649731A (en) * | 2022-03-25 | 2022-06-21 | 商洛学院 | 1048nm laser based on folding resonant cavity |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105514790A (en) * | 2016-01-08 | 2016-04-20 | 中国科学院物理研究所 | All-solid-state optical frequency comb system |
| CN107845948A (en) * | 2017-11-06 | 2018-03-27 | 华中科技大学 | A kind of disc laser of resonance intracavity pump |
| CN208674586U (en) * | 2018-08-17 | 2019-03-29 | 南京先进激光技术研究院 | The thin-sheet laser of low Excited state |
-
2018
- 2018-08-17 CN CN201810937994.8A patent/CN110838666A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105514790A (en) * | 2016-01-08 | 2016-04-20 | 中国科学院物理研究所 | All-solid-state optical frequency comb system |
| CN107845948A (en) * | 2017-11-06 | 2018-03-27 | 华中科技大学 | A kind of disc laser of resonance intracavity pump |
| CN208674586U (en) * | 2018-08-17 | 2019-03-29 | 南京先进激光技术研究院 | The thin-sheet laser of low Excited state |
Non-Patent Citations (1)
| Title |
|---|
| CHRISTIAN VORHOLT等: "Intra-cavity pumped Yb:YAG thin-disk laser with 1.74% quantum defect", OPTICS LETTERS, vol. 40, no. 20, 15 October 2015 (2015-10-15), pages 4819 - 4821 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112350140A (en) * | 2020-10-23 | 2021-02-09 | 密尔医疗科技(深圳)有限公司 | Mixed mode pulse laser |
| CN114649731A (en) * | 2022-03-25 | 2022-06-21 | 商洛学院 | 1048nm laser based on folding resonant cavity |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Shen et al. | Efficient Ho: YAG laser pumped by a cladding-pumped tunable Tm: silica-fibre laser | |
| US6097742A (en) | High-power external-cavity optically-pumped semiconductor lasers | |
| US6683901B2 (en) | High-power external-cavity optically-pumped semiconductor lasers | |
| EP0715774B1 (en) | Deep blue microlaser | |
| US4739507A (en) | Diode end pumped laser and harmonic generator using same | |
| JP4407039B2 (en) | Solid-state laser device and solid-state laser device system | |
| WO2004086578A2 (en) | Improvements in and relating to vertical-cavity semiconductor optical devices | |
| CN110838666A (en) | Low-quantum-defect thin-chip laser and laser output method thereof | |
| US6574255B1 (en) | High-power external-cavity optically-pumped semiconductor lasers | |
| Pavel et al. | In-band pumping of Nd-vanadate thin-disk lasers | |
| JP2000133863A (en) | Solid-state laser | |
| CN219892606U (en) | 2.1 mu m wave band holmium slat laser amplifier | |
| CN111193168A (en) | Variable wavelength laser capable of switching output | |
| EP1760848A2 (en) | High-power external-cavity optically-pumped semiconductor lasers | |
| US6298076B1 (en) | High-power external-cavity optically-pumped semiconductor lasers | |
| CA2672614A1 (en) | Laser | |
| CN208674586U (en) | The thin-sheet laser of low Excited state | |
| CN106532422A (en) | Six-wavelength output passively Q-switched c-cut Nd:YVO4 self-Raman all-solid-state laser | |
| CN112636146B (en) | High-power mode-locked disc laser | |
| CN114883896A (en) | 2 mu m laser | |
| KR100818492B1 (en) | DPSS Laser Apparatus Using Pumping Laser Diode | |
| CN113270785A (en) | Continuous wave 1.5 mu m human eye safety all-solid-state self-Raman laser | |
| CN112448257A (en) | Q-switched holmium laser | |
| CN111193169A (en) | Ultraviolet laser based on bicrystal structure | |
| CN219980045U (en) | Angle separation intracavity pump slat Ho laser |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |