CN112332848B - Low-power consumption comparator circuit with dynamically adjusted comparison time - Google Patents

Low-power consumption comparator circuit with dynamically adjusted comparison time Download PDF

Info

Publication number
CN112332848B
CN112332848B CN202011244609.5A CN202011244609A CN112332848B CN 112332848 B CN112332848 B CN 112332848B CN 202011244609 A CN202011244609 A CN 202011244609A CN 112332848 B CN112332848 B CN 112332848B
Authority
CN
China
Prior art keywords
nmos transistor
inverter
voltage
pmos transistor
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202011244609.5A
Other languages
Chinese (zh)
Other versions
CN112332848A (en
Inventor
庄浩宇
曹启富
唐鹤
彭析竹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Electronic Science and Technology of China
Original Assignee
University of Electronic Science and Technology of China
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Electronic Science and Technology of China filed Critical University of Electronic Science and Technology of China
Priority to CN202011244609.5A priority Critical patent/CN112332848B/en
Publication of CN112332848A publication Critical patent/CN112332848A/en
Application granted granted Critical
Publication of CN112332848B publication Critical patent/CN112332848B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03MCODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00Analogue/digital conversion; Digital/analogue conversion
    • H03M1/12Analogue/digital converters
    • H03M1/50Analogue/digital converters with intermediate conversion to time interval
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K5/00Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/22Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral
    • H03K5/24Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Manipulation Of Pulses (AREA)

Abstract

A low-power consumption comparator circuit with dynamically adjusted comparison time, wherein a positive input processing module inputs VIP and generates a first node signal which is connected to the input ends of a first inverter and a second inverter; the negative input processing module inputs VIN and generates a second node signal which is connected to the input ends of the third inverter and the fourth inverter, and inverters with different inversion threshold voltages are arranged, so that when VIP is larger than VIN, the voltage of the first node drops faster than the voltage of the second node, when the voltage of the first node is smaller than the inversion threshold voltage of the second inverter, and when the voltage of the second node is larger than the inversion threshold voltage of the third inverter, the positive output end of the comparator outputs high level; when VIP is smaller than VIN, the voltage of the first node is slower than the voltage of the second node, and when the voltage of the first node is larger than the turnover threshold voltage of the first inverter and the voltage of the second node is smaller than the turnover threshold voltage of the fourth inverter, the negative output end of the comparator outputs high level; and after the comparison result is obtained, the comparator circuit is turned off, so that the dynamic adjustment of comparison time is realized, and the power consumption is reduced.

Description

一种比较时间动态调整的低功耗比较器电路A low-power comparator circuit with dynamic adjustment of comparison time

技术领域technical field

本发明属于模拟集成电路技术领域,涉及一种比较时间动态调整的低功耗比较器电路结构,能够应用于逐次逼近型模数转换器(SAR ADC)。The invention belongs to the technical field of analog integrated circuits, and relates to a low-power comparator circuit structure with dynamically adjusted comparison time, which can be applied to a successive approximation analog-to-digital converter (SAR ADC).

背景技术Background technique

模数转换器(ADC)是模拟集成电路设计中永恒的话题,比较器在模数转换器中应用广泛。在很多人机交互的应用场景中,对ADC芯片的速度要求不高,但要求ADC芯片功耗低。因此,对于低功耗ADC的设计是有必要的,而ADC中的功耗很大程度来自于比较器,Strong-Arm比较器的功耗主要取决于比较的精度,为了比较出输入差别很小的信号,要求大的输入管电流,然而在输入信号差别很大时,输入管电流依旧很大。因此,现有的Strong-Arm比较器设计整体功耗偏大。Analog-to-digital converter (ADC) is an eternal topic in the design of analog integrated circuits, and comparators are widely used in analog-to-digital converters. In many application scenarios of human-computer interaction, the speed requirement of the ADC chip is not high, but the power consumption of the ADC chip is required to be low. Therefore, it is necessary for the design of low-power ADC, and the power consumption in the ADC comes from the comparator to a large extent. The power consumption of the Strong-Arm comparator mainly depends on the accuracy of the comparison. In order to compare the input difference is very small The signal requires a large input tube current, but when the input signal is very different, the input tube current is still very large. Therefore, the overall power consumption of the existing Strong-Arm comparator design is too large.

如图1所示为传统Strong-Arm比较器结构,当时钟信号CLK为低电平时,比较器处于复位阶段,MP1、MP2、MP3、MP4、MP5、MP6导通,结点X、Y、OUTN、OUTP被复位到电源电压VDD。当时钟信号CLK为高电平时,比较器处于比较阶段,若输入信号VIP>VIN,则结点X比结点Y的电压下降快,随后结点OUTN电压也被迅速拉低,结点OUTN电压降低,抑制了MN4的导通并逐渐开启MP2,使得结点OUTP电压升高,结点OUTP电压的升高增大了MN3的导通电流,并抑制了MP1的导通,最终结点OUTN输出为低电平,结点OUTP输出为高电平。这种结构在输入电压差很小时,需要较大的电流才能比较出正确结果,但是输入电压差较大时功耗和输入电压差较小时相差不大。仿真中,输入电压差值为50mV时,功耗比输入差分为50uV时低15%。As shown in Figure 1, the traditional Strong-Arm comparator structure, when the clock signal CLK is low, the comparator is in the reset phase, MP1, MP2, MP3, MP4, MP5, MP6 conduction, nodes X, Y, OUTN , OUTP is reset to the power supply voltage VDD. When the clock signal CLK is at a high level, the comparator is in the comparison stage. If the input signal VIP>VIN, the voltage of node X drops faster than node Y, and then the voltage of node OUTN is also pulled down rapidly, and the voltage of node OUTN decrease, suppressing the conduction of MN4 and gradually turning on MP2, so that the voltage of node OUTP increases, and the increase of node OUTP voltage increases the conduction current of MN3, and inhibits the conduction of MP1, and finally the node OUTN outputs is low level, node OUTP output is high level. When the input voltage difference is small, this structure needs a large current to compare the correct results, but the power consumption when the input voltage difference is large is not much different from that when the input voltage difference is small. In the simulation, when the input voltage difference is 50mV, the power consumption is 15% lower than when the input difference is 50uV.

发明内容Contents of the invention

针对上述传统比较器在输入电压差较大和输入电压差较小时功耗相差不大的问题,本发明提出一种比较器电路,其比较时间能够随输入信号电压差值大小动态调整,在比较器输入信号差值较大时,比较速度快,将比较完成时产生的比较结束标志信号能够用来关断比较器,相较于传统Strong-Arm比较器能够节省大量功耗;适应于对速度要求不高的系统,如中低速率的ADC。Aiming at the problem that the power consumption of the traditional comparator is not much different when the input voltage difference is large and the input voltage difference is small, the present invention proposes a comparator circuit whose comparison time can be dynamically adjusted with the input signal voltage difference. When the input signal difference is large, the comparison speed is fast, and the comparison end flag signal generated when the comparison is completed can be used to turn off the comparator, which can save a lot of power consumption compared with the traditional Strong-Arm comparator; it is suitable for speed requirements Not high systems, such as low-to-medium rate ADCs.

本发明的技术方案为:Technical scheme of the present invention is:

一种比较时间动态调整的低功耗比较器电路,包括正向输入处理模块、负向输入处理模块和取出比较结果模块,A low-power comparator circuit with dynamic adjustment of comparison time, including a positive input processing module, a negative input processing module and a comparison result extraction module,

所述正向输入处理模块包括第一NMOS管、第二NMOS管、第三NMOS管、第四NMOS管、第一PMOS管、第二PMOS管、第三PMOS管、第四PMOS管、第一反相器和第二反相器,The forward input processing module includes a first NMOS transistor, a second NMOS transistor, a third NMOS transistor, a fourth NMOS transistor, a first PMOS transistor, a second PMOS transistor, a third PMOS transistor, a fourth PMOS transistor, a first inverter and the second inverter,

第二NMOS管的栅极作为所述低功耗比较器电路的正向输入端,其源极连接第一NMOS管的漏极,其漏极连接第一PMOS管的漏极并作为第一结点连接第一反相器和第二反相器的输入端;The gate of the second NMOS transistor is used as the positive input terminal of the low-power comparator circuit, its source is connected to the drain of the first NMOS transistor, and its drain is connected to the drain of the first PMOS transistor as the first junction Connect the input terminals of the first inverter and the second inverter;

第一PMOS管的栅极连接偏置电压,其源极连接第二PMOS管的漏极;The gate of the first PMOS transistor is connected to the bias voltage, and its source is connected to the drain of the second PMOS transistor;

第三NMOS管的栅极连接第二反相器的输出端,其漏极连接第四NMOS管和第三PMOS管的漏极、以及第一NMOS管和第二PMOS管的栅极,其源极连接第一NMOS管和第四NMOS管的源极并接地;The gate of the third NMOS transistor is connected to the output terminal of the second inverter, its drain is connected to the drains of the fourth NMOS transistor and the third PMOS transistor, and the gates of the first NMOS transistor and the second PMOS transistor, and its source The pole is connected to the sources of the first NMOS transistor and the fourth NMOS transistor and grounded;

第三PMOS管的栅极连接第一反相器的输出端,其源极连接第四PMOS管的漏极;The gate of the third PMOS transistor is connected to the output terminal of the first inverter, and the source thereof is connected to the drain of the fourth PMOS transistor;

第四PMOS管的栅极连接第四NMOS管的栅极并连接时钟信号,其源极连接第二PMOS管的源极并连接电源电压;The gate of the fourth PMOS transistor is connected to the gate of the fourth NMOS transistor and connected to the clock signal, and its source is connected to the source of the second PMOS transistor and connected to the power supply voltage;

所述负向输入处理模块包括第五NMOS管、第六NMOS管、第七NMOS管、第八NMOS管、第五PMOS管、第六PMOS管、第七PMOS管、第八PMOS管、第三反相器和第四反相器,The negative input processing module includes a fifth NMOS transistor, a sixth NMOS transistor, a seventh NMOS transistor, an eighth NMOS transistor, a fifth PMOS transistor, a sixth PMOS transistor, a seventh PMOS transistor, an eighth PMOS transistor, a third inverter and the fourth inverter,

第六NMOS管的栅极作为所述低功耗比较器电路的负向输入端,其源极连接第五NMOS管的漏极,其漏极连接第五PMOS管的漏极并作为第二结点连接第三反相器和第四反相器的输入端;The gate of the sixth NMOS transistor is used as the negative input terminal of the low-power comparator circuit, its source is connected to the drain of the fifth NMOS transistor, and its drain is connected to the drain of the fifth PMOS transistor as the second junction The point is connected to the input terminals of the third inverter and the fourth inverter;

第五PMOS管的栅极连接偏置电压,其源极连接第六PMOS管的漏极;The gate of the fifth PMOS transistor is connected to the bias voltage, and its source is connected to the drain of the sixth PMOS transistor;

第七NMOS管的栅极连接第四反相器的输出端,其漏极连接第八NMOS管和第七PMOS管的漏极、以及第五NMOS管和第六PMOS管的栅极,其源极连接第五NMOS管和第八NMOS管的源极并接地;The gate of the seventh NMOS transistor is connected to the output terminal of the fourth inverter, and its drain is connected to the drains of the eighth NMOS transistor and the seventh PMOS transistor, and the gates of the fifth NMOS transistor and the sixth PMOS transistor, and its source The pole is connected to the sources of the fifth NMOS transistor and the eighth NMOS transistor and grounded;

第七PMOS管的栅极连接第三反相器的输出端,其源极连接第八PMOS管的漏极;The gate of the seventh PMOS transistor is connected to the output terminal of the third inverter, and the source thereof is connected to the drain of the eighth PMOS transistor;

第八PMOS管的栅极连接第八NMOS管的栅极并连接时钟信号,其源极连接第六PMOS管的源极并连接电源电压;The gate of the eighth PMOS transistor is connected to the gate of the eighth NMOS transistor and connected to the clock signal, and its source is connected to the source of the sixth PMOS transistor and connected to the power supply voltage;

第一反相器和第三反相器的翻转阈值电压相等,第二反相器和第四反相器的翻转阈值电压相等且小于第一反相器和第三反相器的翻转阈值电压;The inversion threshold voltages of the first inverter and the third inverter are equal, and the inversion threshold voltages of the second inverter and the fourth inverter are equal and lower than the inversion threshold voltages of the first inverter and the third inverter ;

所述取出比较结果模块包括第九NMOS管、第十NMOS管、第十一NMOS管、第十二NMOS管、第十三NMOS管、第十四NMOS管、第九PMOS管和第十PMOS管,The module for taking out the comparison result includes a ninth NMOS transistor, a tenth NMOS transistor, an eleventh NMOS transistor, a twelfth NMOS transistor, a thirteenth NMOS transistor, a fourteenth NMOS transistor, a ninth PMOS transistor, and a tenth PMOS transistor ,

第十二NMOS管和第十PMOS管的栅极互连并连接第一反相器的输出端,第九NMOS管和第九PMOS管的栅极互连并连接第三反相器的输出端,第十一NMOS管的栅极连接第二反相器的输出端,第十四NMOS管的栅极连接第四反相器的输出端;The gates of the twelfth NMOS transistor and the tenth PMOS transistor are interconnected and connected to the output end of the first inverter, and the gates of the ninth NMOS transistor and the ninth PMOS transistor are interconnected and connected to the output end of the third inverter , the gate of the eleventh NMOS transistor is connected to the output end of the second inverter, and the gate of the fourteenth NMOS transistor is connected to the output end of the fourth inverter;

第十NMOS管的栅极连接所述时钟信号,其漏极连接第九NMOS管的漏极和第十一NMOS管的源极并作为所述低功耗比较器电路的正向输出端;The gate of the tenth NMOS transistor is connected to the clock signal, and its drain is connected to the drain of the ninth NMOS transistor and the source of the eleventh NMOS transistor and used as the positive output terminal of the low-power comparator circuit;

第十三NMOS管的栅极连接所述时钟信号,其漏极连接第十二NMOS管的漏极和第十四NMOS管的源极并作为所述低功耗比较器电路的负向输出端;The gate of the thirteenth NMOS transistor is connected to the clock signal, and its drain is connected to the drain of the twelfth NMOS transistor and the source of the fourteenth NMOS transistor and used as a negative output terminal of the low-power comparator circuit ;

第九NMOS管、第十NMOS管、第十二NMOS管和第十三NMOS管的源极接地;The sources of the ninth NMOS transistor, the tenth NMOS transistor, the twelfth NMOS transistor and the thirteenth NMOS transistor are grounded;

第九PMOS管的漏极连接第十一NMOS管的漏极,其源极连接电源电压;The drain of the ninth PMOS transistor is connected to the drain of the eleventh NMOS transistor, and the source thereof is connected to the power supply voltage;

第十PMOS管的漏极连接第十四NMOS管的漏极,其源极连接电源电压;The drain of the tenth PMOS transistor is connected to the drain of the fourteenth NMOS transistor, and the source thereof is connected to the power supply voltage;

所述低功耗比较器电路的正向输入端信号与所述低功耗比较器电路的负向输入端信号不同,导致所述第一结点和所述第二结点电压下降的速度不同;The signal at the positive input terminal of the low-power comparator circuit is different from the signal at the negative input terminal of the low-power comparator circuit, resulting in different speeds of voltage drop between the first node and the second node ;

若低功耗比较器电路的正向输入端信号大于所述低功耗比较器电路的负向输入端信号,则所述第一结点电压下降的速度比所述第二结点电压下降的速度快,在所述第一结点的电压小于第二反相器的翻转阈值电压,所述第二结点的电压大于第三反相器的翻转阈值电压时,所述低功耗比较器电路的正向输出端输出高电平,所述低功耗比较器电路的负向输出端输出低电平,所述低功耗比较器电路产生比较结束标志信号;If the positive input terminal signal of the low power consumption comparator circuit is greater than the negative input terminal signal of the low power consumption comparator circuit, the speed at which the voltage at the first node drops is lower than the voltage at the second node Fast speed, when the voltage of the first node is lower than the flipping threshold voltage of the second inverter and the voltage of the second node is larger than the flipping threshold voltage of the third inverter, the low power comparator The positive output terminal of the circuit outputs a high level, the negative output terminal of the low-power comparator circuit outputs a low level, and the low-power comparator circuit generates a comparison end flag signal;

若低功耗比较器电路的正向输入端信号小于所述低功耗比较器电路的负向输入端信号,则所述第二结点电压下降的速度比所述第一结点电压下降的速度快,在所述第一结点的电压大于第一反相器的翻转阈值电压,所述第二结点的电压小于第四反相器的翻转阈值电压时,所述低功耗比较器电路的正向输出端输出低电平,所述低功耗比较器电路的负向输出端输出高电平,所述低功耗比较器电路产生比较结束标志信号;If the positive input terminal signal of the low power consumption comparator circuit is smaller than the negative input terminal signal of the low power consumption comparator circuit, the speed at which the voltage at the second node drops is lower than that at which the voltage at the first node drops Fast speed, when the voltage of the first node is greater than the inversion threshold voltage of the first inverter and the voltage of the second node is less than the inversion threshold voltage of the fourth inverter, the low power comparator The positive output terminal of the circuit outputs a low level, the negative output terminal of the low-power comparator circuit outputs a high level, and the low-power comparator circuit generates a comparison end flag signal;

所述比较结束标志信号用于控制所述低功耗比较器电路停止工作。The comparison end flag signal is used to control the low power comparator circuit to stop working.

具体的,第一反相器和第三反相器的翻转阈值电压为0.9V,第二反相器和第四反相器的翻转阈值电压为0.2V。Specifically, the inversion threshold voltages of the first inverter and the third inverter are 0.9V, and the inversion threshold voltages of the second inverter and the fourth inverter are 0.2V.

本发明的有益效果为:本发明根据正向输入信号VIP与负向输入信号VIN的电压不同导致第一结点VO1与第二结点VO2电压下降的速度不同,使得在时钟信号CLK为低电平期间第一结点VO1与第二结点VO2的电压差值不断加大,再将第一结点VO1与第二结点VO2连接不同翻转阈值电压的反相器获得比较结果,并在获得比较结果后产生比较结束标志信号后用于控制比较器停止工作,实现比较时间动态调整;本发明提出的比较器,在输入信号差值较大时比较速度快,比较完成后马上关断比较器,因此相较于传统Strong-Arm的比较器结构能够节省大量功耗。The beneficial effects of the present invention are: the present invention causes the voltage drop speeds of the first node VO1 and the second node VO2 to be different according to the voltage difference between the positive input signal VIP and the negative input signal VIN, so that when the clock signal CLK is low During the flat period, the voltage difference between the first node VO1 and the second node VO2 continues to increase, and then the first node VO1 and the second node VO2 are connected to inverters with different flipping threshold voltages to obtain the comparison results, and after obtaining After the comparison result is generated, the comparison end flag signal is used to control the comparator to stop working, and realize the dynamic adjustment of the comparison time; the comparator proposed by the present invention has a fast comparison speed when the input signal difference is large, and the comparator is turned off immediately after the comparison is completed. , so compared with the traditional Strong-Arm comparator structure, it can save a lot of power consumption.

附图说明Description of drawings

图1是传统Strong-Arm比较器的电路原理图。Figure 1 is a circuit schematic diagram of a traditional Strong-Arm comparator.

图2是本发明提出的一种比较时间动态调整的低功耗比较器电路中正向输入处理模块和负向输入处理模块的电路结构示意图。FIG. 2 is a schematic diagram of the circuit structure of a positive input processing module and a negative input processing module in a low-power comparator circuit with dynamic adjustment of comparison time proposed by the present invention.

图3是本发明提出的一种比较时间动态调整的低功耗比较器电路中取出比较结果模块的电路结构示意图。FIG. 3 is a schematic diagram of the circuit structure of a module for extracting comparison results in a low-power comparator circuit with dynamic adjustment of comparison time proposed by the present invention.

图4是本发明提出的一种比较时间动态调整的低功耗比较器电路在输入电压差为50mV的情形下的仿真结果示意图,比较器在第3个比较循环中比出结果。Fig. 4 is a schematic diagram of the simulation results of a low-power comparator circuit with dynamic adjustment of comparison time proposed by the present invention under the condition that the input voltage difference is 50mV, and the comparator compares the results in the third comparison cycle.

图5是本发明提出的一种比较时间动态调整的低功耗比较器电路在输入电压差为2mV的情形下的仿真结果示意图,比较器在第37个比较循环中比出结果。Fig. 5 is a schematic diagram of the simulation results of a low-power comparator circuit with dynamic adjustment of comparison time proposed by the present invention when the input voltage difference is 2mV, and the comparator compares the results in the 37th comparison cycle.

具体实施方式Detailed ways

为了使本发明的目的、技术方案和优点更加清楚,下面将结合附图对本发明进行详细地说明。显然,所描述的实施例仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其它实施例,都属于本发明保护的范围。In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in detail below in conjunction with the accompanying drawings. Apparently, the described embodiments are only some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

需要说明的是,在本发明中,诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来,而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。It should be noted that in the present invention, relative terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply that these entities or operations Any such actual relationship or order exists between.

本发明提出的一种比较时间动态调整的低功耗比较器电路包括正向输入处理模块、负向输入处理模块和取出比较结果模块,如图2所示,正向输入处理模块包括第一NMOS管M1、第二NMOS管M2、第三NMOS管M5、第四NMOS管M6、第一PMOS管M3、第二PMOS管M4、第三PMOS管M7、第四PMOS管M8、第一反相器INV1和第二反相器INV2,第二NMOS管M2的栅极作为低功耗比较器电路的正向输入端,其源极连接第一NMOS管M1的漏极,其漏极连接第一PMOS管M3的漏极并作为第一结点VO1连接第一反相器INV1和第二反相器INV2的输入端;第一PMOS管M3的栅极连接偏置电压VCM,其源极连接第二PMOS管M4的漏极;第三NMOS管M5的栅极连接第二反相器INV2的输出端,其漏极连接第四NMOS管M6和第三PMOS管M7的漏极、以及第一NMOS管M1和第二PMOS管M4的栅极,其源极连接第一NMOS管M1和第四NMOS管M6的源极并接地;第三PMOS管M7的栅极连接第一反相器INV1的输出端,其源极连接第四PMOS管M8的漏极;第四PMOS管M8的栅极连接第四NMOS管M6的栅极并连接时钟信号CLK,其源极连接第二PMOS管M4的源极并连接电源电压。A low-power comparator circuit with dynamic adjustment of comparison time proposed by the present invention includes a positive input processing module, a negative input processing module, and a module for taking out comparison results. As shown in Figure 2, the positive input processing module includes a first NMOS Tube M1, second NMOS tube M2, third NMOS tube M5, fourth NMOS tube M6, first PMOS tube M3, second PMOS tube M4, third PMOS tube M7, fourth PMOS tube M8, first inverter INV1 and the second inverter INV2, the gate of the second NMOS transistor M2 is used as the positive input terminal of the low-power comparator circuit, its source is connected to the drain of the first NMOS transistor M1, and its drain is connected to the first PMOS The drain of the transistor M3 is connected to the input terminals of the first inverter INV1 and the second inverter INV2 as the first node VO1; the gate of the first PMOS transistor M3 is connected to the bias voltage VCM, and its source is connected to the second The drain of the PMOS transistor M4; the gate of the third NMOS transistor M5 is connected to the output terminal of the second inverter INV2, and its drain is connected to the drains of the fourth NMOS transistor M6 and the third PMOS transistor M7, and the first NMOS transistor The gates of M1 and the second PMOS transistor M4, the sources of which are connected to the sources of the first NMOS transistor M1 and the fourth NMOS transistor M6 and grounded; the gate of the third PMOS transistor M7 is connected to the output terminal of the first inverter INV1 , its source is connected to the drain of the fourth PMOS transistor M8; the gate of the fourth PMOS transistor M8 is connected to the gate of the fourth NMOS transistor M6 and connected to the clock signal CLK, its source is connected to the source of the second PMOS transistor M4 and Connect the mains voltage.

本发明为对称结构,负向输入处理模块和正向输入处理模块的结构和工作原理类似,如图2所示,负向输入处理模块包括第五NMOS管M9、第六NMOS管M10、第七NMOS管M13、第八NMOS管M14、第五PMOS管M11、第六PMOS管M12、第七PMOS管M15、第八PMOS管M16、第三反相器INV3和第四反相器INV4,第六NMOS管M10的栅极作为低功耗比较器电路的负向输入端,其源极连接第五NMOS管M9的漏极,其漏极连接第五PMOS管M11的漏极并作为第二结点VO2连接第三反相器INV3和第四反相器INV4的输入端;第五PMOS管M11的栅极连接偏置电压VCM,其源极连接第六PMOS管M12的漏极;第七NMOS管M13的栅极连接第四反相器INV4的输出端,其漏极连接第八NMOS管M14和第七PMOS管M15的漏极、以及第五NMOS管M9和第六PMOS管M12的栅极,其源极连接第五NMOS管M9和第八NMOS管M14的源极并接地;第七PMOS管M15的栅极连接第三反相器INV3的输出端,其源极连接第八PMOS管M16的漏极;第八PMOS管M16的栅极连接第八NMOS管M14的栅极并连接时钟信号CLK,其源极连接第六PMOS管M12的源极并连接电源电压。The present invention has a symmetrical structure, and the structure and working principle of the negative input processing module and the positive input processing module are similar. As shown in Figure 2, the negative input processing module includes a fifth NMOS transistor M9, a sixth NMOS transistor M10, a seventh NMOS transistor Tube M13, eighth NMOS tube M14, fifth PMOS tube M11, sixth PMOS tube M12, seventh PMOS tube M15, eighth PMOS tube M16, third inverter INV3 and fourth inverter INV4, sixth NMOS The gate of the tube M10 is used as the negative input terminal of the low-power comparator circuit, its source is connected to the drain of the fifth NMOS tube M9, and its drain is connected to the drain of the fifth PMOS tube M11 as the second node VO2 Connect the input terminals of the third inverter INV3 and the fourth inverter INV4; the gate of the fifth PMOS transistor M11 is connected to the bias voltage VCM, and its source is connected to the drain of the sixth PMOS transistor M12; the seventh NMOS transistor M13 Its gate is connected to the output terminal of the fourth inverter INV4, its drain is connected to the drains of the eighth NMOS transistor M14 and the seventh PMOS transistor M15, and the gates of the fifth NMOS transistor M9 and the sixth PMOS transistor M12, which The source is connected to the source of the fifth NMOS transistor M9 and the eighth NMOS transistor M14 and grounded; the gate of the seventh PMOS transistor M15 is connected to the output terminal of the third inverter INV3, and its source is connected to the drain of the eighth PMOS transistor M16 The gate of the eighth PMOS transistor M16 is connected to the gate of the eighth NMOS transistor M14 and connected to the clock signal CLK, and the source thereof is connected to the source of the sixth PMOS transistor M12 and connected to the power supply voltage.

负向输入处理模块和正向输入处理模块的结构和工作原理类似,只有输入输出标志不同,取出比较结果模块用于对负向输入处理模块和正向输入处理模块产生的标志信号进行处理获得比较器的最终比较结果,如图3所示,取出比较结果模块包括第九NMOS管M17、第十NMOS管M18、第十一NMOS管M19、第十二NMOS管M21、第十三NMOS管M22、第十四NMOS管M23、第九PMOS管M20和第十PMOS管M24,第十二NMOS管M21和第十PMOS管M24的栅极互连并连接第一反相器INV1的输出端,第九NMOS管M17和第九PMOS管M20的栅极互连并连接第三反相器INV3的输出端,第十一NMOS管M19的栅极连接第二反相器INV2的输出端,第十四NMOS管M23的栅极连接第四反相器INV4的输出端;第十NMOS管M18的栅极连接时钟信号CLK,其漏极连接第九NMOS管M17的漏极和第十一NMOS管M19的源极并作为低功耗比较器电路的正向输出端;第十三NMOS管M22的栅极连接时钟信号CLK,其漏极连接第十二NMOS管M21的漏极和第十四NMOS管M23的源极并作为低功耗比较器电路的负向输出端;第九NMOS管M17、第十NMOS管M18、第十二NMOS管M21和第十三NMOS管M22的源极接地;第九PMOS管M20的漏极连接第十一NMOS管M19的漏极,其源极连接电源电压;第十PMOS管M24的漏极连接第十四NMOS管M23的漏极,其源极连接电源电压。The structure and working principle of the negative input processing module and the positive input processing module are similar, only the input and output signs are different, and the comparison result module is used to process the flag signals generated by the negative input processing module and the positive input processing module to obtain the comparator The final comparison result, as shown in Figure 3, the module for taking out the comparison result includes the ninth NMOS transistor M17, the tenth NMOS transistor M18, the eleventh NMOS transistor M19, the twelfth NMOS transistor M21, the thirteenth NMOS transistor M22, the tenth NMOS transistor The four NMOS transistors M23, the ninth PMOS transistor M20 and the tenth PMOS transistor M24, the gates of the twelfth NMOS transistor M21 and the tenth PMOS transistor M24 are interconnected and connected to the output end of the first inverter INV1, the ninth NMOS transistor The gates of M17 and the ninth PMOS transistor M20 are interconnected and connected to the output terminal of the third inverter INV3, the gate of the eleventh NMOS transistor M19 is connected to the output terminal of the second inverter INV2, and the gate of the fourteenth NMOS transistor M23 The gate of the tenth NMOS transistor M18 is connected to the output terminal of the fourth inverter INV4; the gate of the tenth NMOS transistor M18 is connected to the clock signal CLK, and its drain is connected to the drain of the ninth NMOS transistor M17 and the source of the eleventh NMOS transistor M19. As the positive output terminal of the low-power comparator circuit; the gate of the thirteenth NMOS transistor M22 is connected to the clock signal CLK, and its drain is connected to the drain of the twelfth NMOS transistor M21 and the source of the fourteenth NMOS transistor M23 And as the negative output terminal of the low-power comparator circuit; the sources of the ninth NMOS transistor M17, the tenth NMOS transistor M18, the twelfth NMOS transistor M21 and the thirteenth NMOS transistor M22 are grounded; the ninth PMOS transistor M20 The drain is connected to the drain of the eleventh NMOS transistor M19, and its source is connected to the power supply voltage; the drain of the tenth PMOS transistor M24 is connected to the drain of the fourteenth NMOS transistor M23, and its source is connected to the power supply voltage.

下面详细说明本发明的工作过程和工作原理。The working process and working principle of the present invention will be described in detail below.

本发明运用了不同翻转阈值电压的比较器,设置第一反相器INV1和第三反相器INV3的翻转阈值电压相等,第二反相器INV2和第四反相器INV4的翻转阈值电压相等且小于第一反相器INV1和第三反相器INV3的翻转阈值电压;本实施例取电源电压为1.1V,则将第一反相器INV1和第三反相器INV3的翻转阈值电压设置为较高的电压0.9V,第二反相器INV2和第四反相器INV4的翻转阈值电压设置为较低的电压0.2V为例进行说明,当然也可以取其他合适的值设置反相器阈值电压。由于图2、3所示的本发明比较器电路左右两部分完全对称,只有输入输出标志不同,下面以左边部分的正向输入处理模块和对应取出比较结果模块为例说明原理。The present invention uses comparators with different inversion threshold voltages, setting the inversion threshold voltages of the first inverter INV1 and the third inverter INV3 to be equal, and setting the inversion threshold voltages of the second inverter INV2 and the fourth inverter INV4 to be equal And less than the inversion threshold voltage of the first inverter INV1 and the third inverter INV3; in this embodiment, the power supply voltage is 1.1V, then the inversion threshold voltage of the first inverter INV1 and the third inverter INV3 is set to For a higher voltage of 0.9V, the inversion threshold voltage of the second inverter INV2 and the fourth inverter INV4 is set to a lower voltage of 0.2V as an example. Of course, other suitable values can also be used to set the inverters threshold voltage. Since the left and right parts of the comparator circuit of the present invention shown in Figures 2 and 3 are completely symmetrical, only the input and output signs are different, the following uses the positive input processing module on the left part and the corresponding output comparison result module as an example to illustrate the principle.

当时钟信号CLK为高电平时,第四PMOS管M8关断,第四NMOS管M6导通,结点CTRL1(即第四NMOS管M6的漏端)电压被拉到0,并使得第二PMOS管M4导通。偏置电压VCM用于使得第一PMOS管M3和第五PMOS管M11恒导通,可以由基准电压源电路产生,偏置电压VCM可以取不同的值,只要保证第一PMOS管M3和第五PMOS管M11导通即可。本实施例中令偏置电压VCM为较低的电平如550mV,第一PMOS管M3导通,第一结点VO1电压被上拉到电源电压VDD,结点X1(即第一反相器INV1的输出端)、结点Y1(即第二反相器INV2的输出端)电压为低。When the clock signal CLK is at a high level, the fourth PMOS transistor M8 is turned off, the fourth NMOS transistor M6 is turned on, and the voltage of the node CTRL1 (that is, the drain terminal of the fourth NMOS transistor M6) is pulled to 0, and the second PMOS transistor M6 is pulled to 0. Tube M4 conducts. The bias voltage VCM is used to make the first PMOS transistor M3 and the fifth PMOS transistor M11 constant conduction, which can be generated by the reference voltage source circuit. The bias voltage VCM can take different values, as long as the first PMOS transistor M3 and the fifth PMOS transistor M3 are guaranteed to be The PMOS transistor M11 needs to be turned on. In this embodiment, the bias voltage VCM is set to a lower level such as 550mV, the first PMOS transistor M3 is turned on, the voltage of the first node VO1 is pulled up to the power supply voltage VDD, and the node X1 (that is, the first inverter The output terminal of INV1), the voltage of node Y1 (that is, the output terminal of the second inverter INV2) is low.

当时钟信号CLK变化为低电平时,结点CTRL1被拉高,随后第二PMOS管M4截止,第一NMOS管M1导通,第一结点VO1电压开始下降,直到第一结点VO1小于第二反相器INV2的翻转阈值电压(本实施例中为0.2V),此时结点X1、Y1均为1,结点CTRL1变为0,第二PMOS管M4再次被打开,第一NMOS管M1被关断,第一结点VO1电压上升,直至第一节点VO1电压大于第一反相器INV1的翻转阈值电压(本实施例中为0.9V),结点X1、Y1均为0,结点CTRL1变为1,如此循环反复。时钟信号CLK相当于复位信号,每次时钟信号CLK翻高时比较器进行复位,随后在时钟信号CLK为低电平期间进行比较获得比较结果。When the clock signal CLK changes to a low level, the node CTRL1 is pulled high, then the second PMOS transistor M4 is turned off, the first NMOS transistor M1 is turned on, and the voltage of the first node VO1 begins to drop until the first node VO1 is less than the second The inversion threshold voltage (0.2V in this embodiment) of the two inverters INV2, at this time, the nodes X1 and Y1 are both 1, the node CTRL1 becomes 0, the second PMOS transistor M4 is turned on again, and the first NMOS transistor M4 is turned on again. M1 is turned off, and the voltage of the first node VO1 rises until the voltage of the first node VO1 is greater than the inversion threshold voltage (0.9V in this embodiment) of the first inverter INV1, the nodes X1 and Y1 are both 0, and the junction Point CTRL1 becomes 1, so the cycle repeats. The clock signal CLK is equivalent to a reset signal, and the comparator resets each time the clock signal CLK goes high, and then performs a comparison when the clock signal CLK is at a low level to obtain a comparison result.

右边部分的负向输入处理模块内的比较过程与左边部分的正向输入处理模块类似,差别在于正向输入处理模块输入的正向输入信号VIP与负向输入处理模块输入的负向输入信号VIN的电压不同,因此第一结点VO1与第二结点VO2电压下降的速度不同,使得在时钟信号CLK为低电平期间的每个循环中,第一结点VO1与第二结点VO2的电压差值不断加大。如果VIP>VIN,则第一结点VO1电压下降的速度比第二结点电压VO2下降的速度快,当下降至第一结点VO1电压小于0.2V,第二结点VO2电压大于0.9V时,第一反相器INV1的输出端结点X1、第二反相器INV2的输出端结点Y1电压均为高电平1,第三反相器INV3的输出端结点X2、第四反相器INV4的输出端结点Y2电压均为低电平0,以此作为比较完成的依据,并用图3所示的取出比较结果模块产生比较结果,

Figure BDA0002769567720000071
因此,比较器正向输出信号DOP=1,比较器负向输出信号DON=0。The comparison process in the negative input processing module on the right is similar to the positive input processing module on the left, the difference lies in the positive input signal VIP input to the positive input processing module and the negative input signal VIN input to the negative input processing module The voltages of the first node VO1 and the second node VO2 drop at different speeds, so that in each cycle during which the clock signal CLK is low, the voltages of the first node VO1 and the second node VO2 The voltage difference keeps increasing. If VIP>VIN, the voltage of the first node VO1 drops faster than the voltage of the second node VO2, when the voltage of the first node VO1 is lower than 0.2V and the voltage of the second node VO2 is greater than 0.9V , the voltages of the output node X1 of the first inverter INV1 and the output node Y1 of the second inverter INV2 are high level 1, the output node X2 of the third inverter INV3, the voltage of the output node Y1 of the fourth inverter The output terminal node Y2 voltage of the phase device INV4 is all low level 0, which is used as the basis for the comparison completion, and the comparison result module shown in Figure 3 is used to generate the comparison result.
Figure BDA0002769567720000071
Therefore, the comparator outputs signal DOP=1 in positive direction, and the comparator outputs signal DON=0 in negative direction.

反之,如果VIP<VIN,则第一结点VO1电压下降的速度比第二结点电压VO2下降的速度慢,当,当下降至第二结点VO2电压小于0.2V,第一结点VO1电压大于0.9V时,比较器正向输出信号DOP=0,比较器负向输出信号DON=1。Conversely, if VIP<VIN, the voltage drop rate of the first node VO1 is slower than that of the second node voltage VO2. When it is greater than 0.9V, the comparator output signal DOP=0 in positive direction, and the comparator output signal DON=1 in negative direction.

在获得比较结果后,比较器电路产生比较结束标志信号,用于将比较器电路中的晶体管关断,从而控制低功耗比较器电路停止工作,达到节省功耗的目的。结合仿真进行说明,如图4和图5为本发明的仿真结果图,其中图4为比较器的输入电压差为50mV的情形,可以看出比较器在第3个比较循环中比出结果;图5为比较器的输入电压差2mV的情形,可以看出比较器在第37个比较循环中比出结果。得到比较结果后,在一个时钟信号CLK的周期内比较器不需要再循环比较,本发明提出在DOP或DON翻转为1时产生比较器比较完成的标志信号,该标志信号可以通过逻辑电路将比较器中的晶体管关断,从而动态调整比较器功耗,因此本发明提出的比较器结构在输入电压差值比较大时能够实现很低的功耗。此处大约只有输入差分电压较小时的1/10,而在传统比较器设计中,其功耗与输入差分信号大小关系不大(仿真中只相差16%),不能达到节省功耗的目的。After the comparison result is obtained, the comparator circuit generates a comparison end flag signal, which is used to turn off the transistor in the comparator circuit, thereby controlling the low-power comparator circuit to stop working, so as to save power consumption. Illustrate in conjunction with emulation, as Fig. 4 and Fig. 5 are the emulation result figures of the present invention, wherein Fig. 4 is the situation that the input voltage difference of comparator is 50mV, it can be seen that comparator compares result in the 3rd comparison cycle; Figure 5 shows the situation where the input voltage difference of the comparator is 2mV, it can be seen that the comparator compares the result in the 37th comparison cycle. After the comparison result is obtained, the comparator does not need to recirculate the comparison within a cycle of the clock signal CLK. The present invention proposes to generate a flag signal that the comparison of the comparator is completed when DOP or DON is flipped to 1, and the flag signal can be compared by a logic circuit. The transistor in the comparator is turned off, thereby dynamically adjusting the power consumption of the comparator. Therefore, the comparator structure proposed by the present invention can realize very low power consumption when the input voltage difference is relatively large. Here, it is only about 1/10 of that when the input differential voltage is small, and in the traditional comparator design, its power consumption has little relationship with the input differential signal (the difference is only 16% in the simulation), and the purpose of saving power consumption cannot be achieved.

传统Strong-Arm比较器功耗主要取决于比较的精度,为了比较出输入差别很小的信号,要求大的输入管电流,然而在输入信号差别很大时,输入管电流依旧很大。因此传统比较器设计整体功耗偏大。而本发明提出了一种比较时间动态调整以降低功耗的比较器电路结构,本发明的输出结果为数字信号,因此在比较出结果后可以用该数字信号断开比较器中晶体管,令比较器停止工作,使得比较时间得以动态调整。本发明在输入信号差别较大时可以快速比较出结果并使比较器停止工作,大幅度减少了比较器的功耗。The power consumption of a traditional Strong-Arm comparator mainly depends on the comparison accuracy. In order to compare signals with small input differences, a large input tube current is required. However, when the input signals differ greatly, the input tube current is still very large. Therefore, the overall power consumption of the traditional comparator design is too large. However, the present invention proposes a comparator circuit structure that dynamically adjusts the comparison time to reduce power consumption. The output result of the present invention is a digital signal, so the digital signal can be used to disconnect the transistor in the comparator after comparing the result, so that the comparator The device stops working, so that the comparison time can be adjusted dynamically. The invention can quickly compare the results and stop the comparator when the input signal difference is large, and greatly reduces the power consumption of the comparator.

本领域的普通技术人员可以根据本发明公开的这些技术启示做出各种不脱离本发明实质的其它各种具体变形和组合,这些变形和组合仍然在本发明的保护范围内。Those skilled in the art can make various other specific modifications and combinations based on the technical revelations disclosed in the present invention without departing from the essence of the present invention, and these modifications and combinations are still within the protection scope of the present invention.

Claims (2)

1.一种比较时间动态调整的低功耗比较器电路,其特征在于,包括正向输入处理模块、负向输入处理模块和取出比较结果模块,1. A low-power comparator circuit with dynamically adjusted comparison time, characterized in that it includes a positive input processing module, a negative input processing module and a comparison result module, 所述正向输入处理模块包括第一NMOS管、第二NMOS管、第三NMOS管、第四NMOS管、第一PMOS管、第二PMOS管、第三PMOS管、第四PMOS管、第一反相器和第二反相器,The forward input processing module includes a first NMOS transistor, a second NMOS transistor, a third NMOS transistor, a fourth NMOS transistor, a first PMOS transistor, a second PMOS transistor, a third PMOS transistor, a fourth PMOS transistor, a first inverter and the second inverter, 第二NMOS管的栅极作为所述低功耗比较器电路的正向输入端,其源极连接第一NMOS管的漏极,其漏极连接第一PMOS管的漏极并作为第一结点连接第一反相器和第二反相器的输入端;The gate of the second NMOS transistor is used as the positive input terminal of the low-power comparator circuit, its source is connected to the drain of the first NMOS transistor, and its drain is connected to the drain of the first PMOS transistor as the first junction Connect the input terminals of the first inverter and the second inverter; 第一PMOS管的栅极连接偏置电压,其源极连接第二PMOS管的漏极;The gate of the first PMOS transistor is connected to the bias voltage, and its source is connected to the drain of the second PMOS transistor; 第三NMOS管的栅极连接第二反相器的输出端,其漏极连接第四NMOS管和第三PMOS管的漏极、以及第一NMOS管和第二PMOS管的栅极,其源极连接第一NMOS管和第四NMOS管的源极并接地;The gate of the third NMOS transistor is connected to the output terminal of the second inverter, its drain is connected to the drains of the fourth NMOS transistor and the third PMOS transistor, and the gates of the first NMOS transistor and the second PMOS transistor, and its source The pole is connected to the sources of the first NMOS transistor and the fourth NMOS transistor and grounded; 第三PMOS管的栅极连接第一反相器的输出端,其源极连接第四PMOS管的漏极;The gate of the third PMOS transistor is connected to the output terminal of the first inverter, and the source thereof is connected to the drain of the fourth PMOS transistor; 第四PMOS管的栅极连接第四NMOS管的栅极并连接时钟信号,其源极连接第二PMOS管的源极并连接电源电压;The gate of the fourth PMOS transistor is connected to the gate of the fourth NMOS transistor and connected to the clock signal, and its source is connected to the source of the second PMOS transistor and connected to the power supply voltage; 所述负向输入处理模块包括第五NMOS管、第六NMOS管、第七NMOS管、第八NMOS管、第五PMOS管、第六PMOS管、第七PMOS管、第八PMOS管、第三反相器和第四反相器,The negative input processing module includes a fifth NMOS transistor, a sixth NMOS transistor, a seventh NMOS transistor, an eighth NMOS transistor, a fifth PMOS transistor, a sixth PMOS transistor, a seventh PMOS transistor, an eighth PMOS transistor, a third inverter and the fourth inverter, 第六NMOS管的栅极作为所述低功耗比较器电路的负向输入端,其源极连接第五NMOS管的漏极,其漏极连接第五PMOS管的漏极并作为第二结点连接第三反相器和第四反相器的输入端;The gate of the sixth NMOS transistor is used as the negative input terminal of the low-power comparator circuit, its source is connected to the drain of the fifth NMOS transistor, and its drain is connected to the drain of the fifth PMOS transistor as the second junction The point is connected to the input terminals of the third inverter and the fourth inverter; 第五PMOS管的栅极连接偏置电压,其源极连接第六PMOS管的漏极;The gate of the fifth PMOS transistor is connected to the bias voltage, and its source is connected to the drain of the sixth PMOS transistor; 第七NMOS管的栅极连接第四反相器的输出端,其漏极连接第八NMOS管和第七PMOS管的漏极、以及第五NMOS管和第六PMOS管的栅极,其源极连接第五NMOS管和第八NMOS管的源极并接地;The gate of the seventh NMOS transistor is connected to the output terminal of the fourth inverter, and its drain is connected to the drains of the eighth NMOS transistor and the seventh PMOS transistor, and the gates of the fifth NMOS transistor and the sixth PMOS transistor, and its source The pole is connected to the sources of the fifth NMOS transistor and the eighth NMOS transistor and grounded; 第七PMOS管的栅极连接第三反相器的输出端,其源极连接第八PMOS管的漏极;The gate of the seventh PMOS transistor is connected to the output terminal of the third inverter, and the source thereof is connected to the drain of the eighth PMOS transistor; 第八PMOS管的栅极连接第八NMOS管的栅极并连接时钟信号,其源极连接第六PMOS管的源极并连接电源电压;The gate of the eighth PMOS transistor is connected to the gate of the eighth NMOS transistor and connected to the clock signal, and its source is connected to the source of the sixth PMOS transistor and connected to the power supply voltage; 第一反相器和第三反相器的翻转阈值电压相等,第二反相器和第四反相器的翻转阈值电压相等且小于第一反相器和第三反相器的翻转阈值电压;The inversion threshold voltages of the first inverter and the third inverter are equal, and the inversion threshold voltages of the second inverter and the fourth inverter are equal and lower than the inversion threshold voltages of the first inverter and the third inverter ; 所述取出比较结果模块包括第九NMOS管、第十NMOS管、第十一NMOS管、第十二NMOS管、第十三NMOS管、第十四NMOS管、第九PMOS管和第十PMOS管,The module for taking out the comparison result includes a ninth NMOS transistor, a tenth NMOS transistor, an eleventh NMOS transistor, a twelfth NMOS transistor, a thirteenth NMOS transistor, a fourteenth NMOS transistor, a ninth PMOS transistor, and a tenth PMOS transistor , 第十二NMOS管和第十PMOS管的栅极互连并连接第一反相器的输出端,第九NMOS管和第九PMOS管的栅极互连并连接第三反相器的输出端,第十一NMOS管的栅极连接第二反相器的输出端,第十四NMOS管的栅极连接第四反相器的输出端;The gates of the twelfth NMOS transistor and the tenth PMOS transistor are interconnected and connected to the output end of the first inverter, and the gates of the ninth NMOS transistor and the ninth PMOS transistor are interconnected and connected to the output end of the third inverter , the gate of the eleventh NMOS transistor is connected to the output end of the second inverter, and the gate of the fourteenth NMOS transistor is connected to the output end of the fourth inverter; 第十NMOS管的栅极连接所述时钟信号,其漏极连接第九NMOS管的漏极和第十一NMOS管的源极并作为所述低功耗比较器电路的正向输出端;The gate of the tenth NMOS transistor is connected to the clock signal, and its drain is connected to the drain of the ninth NMOS transistor and the source of the eleventh NMOS transistor and used as the positive output terminal of the low-power comparator circuit; 第十三NMOS管的栅极连接所述时钟信号,其漏极连接第十二NMOS管的漏极和第十四NMOS管的源极并作为所述低功耗比较器电路的负向输出端;The gate of the thirteenth NMOS transistor is connected to the clock signal, and its drain is connected to the drain of the twelfth NMOS transistor and the source of the fourteenth NMOS transistor and used as a negative output terminal of the low-power comparator circuit ; 第九NMOS管、第十NMOS管、第十二NMOS管和第十三NMOS管的源极接地;The sources of the ninth NMOS transistor, the tenth NMOS transistor, the twelfth NMOS transistor and the thirteenth NMOS transistor are grounded; 第九PMOS管的漏极连接第十一NMOS管的漏极,其源极连接电源电压;The drain of the ninth PMOS transistor is connected to the drain of the eleventh NMOS transistor, and the source thereof is connected to the power supply voltage; 第十PMOS管的漏极连接第十四NMOS管的漏极,其源极连接电源电压;The drain of the tenth PMOS transistor is connected to the drain of the fourteenth NMOS transistor, and the source thereof is connected to the power supply voltage; 所述低功耗比较器电路的正向输入端信号与所述低功耗比较器电路的负向输入端信号不同,导致所述第一结点和所述第二结点电压下降的速度不同;The signal at the positive input terminal of the low-power comparator circuit is different from the signal at the negative input terminal of the low-power comparator circuit, resulting in different speeds of voltage drop between the first node and the second node ; 若低功耗比较器电路的正向输入端信号大于所述低功耗比较器电路的负向输入端信号,则所述第一结点电压下降的速度比所述第二结点电压下降的速度快,在所述第一结点的电压小于第二反相器的翻转阈值电压,所述第二结点的电压大于第三反相器的翻转阈值电压时,所述低功耗比较器电路的正向输出端输出高电平,所述低功耗比较器电路的负向输出端输出低电平,所述低功耗比较器电路产生比较结束标志信号;If the positive input terminal signal of the low power consumption comparator circuit is greater than the negative input terminal signal of the low power consumption comparator circuit, the speed at which the voltage at the first node drops is lower than the voltage at the second node Fast speed, when the voltage of the first node is lower than the flipping threshold voltage of the second inverter and the voltage of the second node is larger than the flipping threshold voltage of the third inverter, the low power comparator The positive output terminal of the circuit outputs a high level, the negative output terminal of the low-power comparator circuit outputs a low level, and the low-power comparator circuit generates a comparison end flag signal; 若低功耗比较器电路的正向输入端信号小于所述低功耗比较器电路的负向输入端信号,则所述第二结点电压下降的速度比所述第一结点电压下降的速度快,在所述第一结点的电压大于第一反相器的翻转阈值电压,所述第二结点的电压小于第四反相器的翻转阈值电压时,所述低功耗比较器电路的正向输出端输出低电平,所述低功耗比较器电路的负向输出端输出高电平,所述低功耗比较器电路产生比较结束标志信号;If the positive input terminal signal of the low power consumption comparator circuit is smaller than the negative input terminal signal of the low power consumption comparator circuit, the speed at which the voltage at the second node drops is lower than that at which the voltage at the first node drops Fast speed, when the voltage of the first node is greater than the inversion threshold voltage of the first inverter and the voltage of the second node is less than the inversion threshold voltage of the fourth inverter, the low power comparator The positive output terminal of the circuit outputs a low level, the negative output terminal of the low-power comparator circuit outputs a high level, and the low-power comparator circuit generates a comparison end flag signal; 所述比较结束标志信号用于控制所述低功耗比较器电路停止工作。The comparison end flag signal is used to control the low power comparator circuit to stop working. 2.根据权利要求1所述的比较时间动态调整的低功耗比较器电路,其特征在于,第一反相器和第三反相器的翻转阈值电压为0.9V,第二反相器和第四反相器的翻转阈值电压为0.2V。2. The low-power comparator circuit with dynamic adjustment of comparison time according to claim 1, wherein the flipping threshold voltage of the first inverter and the third inverter is 0.9V, and the second inverter and the third inverter The flipping threshold voltage of the fourth inverter is 0.2V.
CN202011244609.5A 2020-11-10 2020-11-10 Low-power consumption comparator circuit with dynamically adjusted comparison time Active CN112332848B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202011244609.5A CN112332848B (en) 2020-11-10 2020-11-10 Low-power consumption comparator circuit with dynamically adjusted comparison time

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202011244609.5A CN112332848B (en) 2020-11-10 2020-11-10 Low-power consumption comparator circuit with dynamically adjusted comparison time

Publications (2)

Publication Number Publication Date
CN112332848A CN112332848A (en) 2021-02-05
CN112332848B true CN112332848B (en) 2023-05-26

Family

ID=74315581

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202011244609.5A Active CN112332848B (en) 2020-11-10 2020-11-10 Low-power consumption comparator circuit with dynamically adjusted comparison time

Country Status (1)

Country Link
CN (1) CN112332848B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112994671B (en) * 2021-02-08 2022-02-11 苏州领慧立芯科技有限公司 Low-power-consumption small-area high-precision power-on reset circuit
CN113452374A (en) * 2021-07-07 2021-09-28 哈尔滨工业大学(威海) Low-offset switch capacitor comparator
CN114244369A (en) * 2021-10-18 2022-03-25 清华大学 successive approximation analog-to-digital conversion transpose

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110034765A (en) * 2019-04-25 2019-07-19 电子科技大学 A kind of dynamic latch comparator of quick response
CN111313872A (en) * 2020-02-23 2020-06-19 电子科技大学 High-resolution low-power-consumption dynamic latch comparator

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1235348A1 (en) * 2001-02-14 2002-08-28 Siemens Aktiengesellschaft Hysteresis circuit
CN110622417B (en) * 2017-05-23 2023-07-25 株式会社村田制作所 Comparison circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110034765A (en) * 2019-04-25 2019-07-19 电子科技大学 A kind of dynamic latch comparator of quick response
CN111313872A (en) * 2020-02-23 2020-06-19 电子科技大学 High-resolution low-power-consumption dynamic latch comparator

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
A Novel Comparator Offset Calibration Technique for SAR ADCs;Xizhu Peng,et. al.;2018 IEEE International Conference on Electron Devices and Solid State Circuits;全文 *
Voltage Comparator With 60% Faster Speed by Using Charge Pump;Haoyu Zhuang,et. al.;IEEE Transactions on Circuits and Systems II: Express Briefs;全文 *

Also Published As

Publication number Publication date
CN112332848A (en) 2021-02-05

Similar Documents

Publication Publication Date Title
CN112332848B (en) Low-power consumption comparator circuit with dynamically adjusted comparison time
CN108574489B (en) Comparator and successive approximation type analog-digital converter
CN105680834B (en) A kind of dynamic comparer of high-speed low-power-consumption
CN105958994B (en) A kind of sub-threshold level converter with wide input voltage range
CN106026996B (en) A kind of positive feedback isolation dynamic latch comparator
CN104270150B (en) High-speed low-power-consumption reference voltage output buffer applied to production line analog-digital converter
CN109995363B (en) A Ring Voltage Controlled Oscillator with Self-biased Structure
CN104796123B (en) The non-constant biasing low-power consumption continuous time comparator of performance boost is carried out in upset point
CN101533285A (en) A reference voltage buffer circuit
Kim et al. Comparative study and optimization of synchronous and asynchronous comparators at near-threshold voltages
CN112187226A (en) Low-voltage low-power-consumption dynamic comparator
CN109586695B (en) Circuit of high-speed dynamic comparator
CN206948279U (en) A kind of Fully-differential low-power-consumptiolow-noise comparator of high tension apparatus work at lower voltages
CN112003594A (en) Low-power-consumption dynamic comparator circuit
CN106160744A (en) A kind of high speed dynamic latch comparator applied in low voltage environment
CN109586694B (en) High-speed low-power-consumption comparator circuit
CN115102528B (en) An ultra-low power consumption and high-speed dual positive feedback comparator circuit
CN108011629A (en) A kind of high-speed low-power-consumption level displacement circuit
CN107659302A (en) Level shifting circuit with pre-amplification
CN105511542A (en) Voltage buffer applied to SAR (Successive Approximation Register) ADC (Analog to Digital Converter)
CN113422594B (en) Dynamic comparator
CN113517883B (en) Bootstrap switch for reducing channel charge injection effect
CN111162786B (en) Comparator for eliminating kickback noise
CN114337619B (en) Reverse flow comparator capable of eliminating false overturn
CN110739942A (en) kinds of power-on reset circuit

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant