CN112331800A - Semiconductor device and manufacturing method - Google Patents
Semiconductor device and manufacturing method Download PDFInfo
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- CN112331800A CN112331800A CN202011156829.2A CN202011156829A CN112331800A CN 112331800 A CN112331800 A CN 112331800A CN 202011156829 A CN202011156829 A CN 202011156829A CN 112331800 A CN112331800 A CN 112331800A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 238000001704 evaporation Methods 0.000 claims abstract description 135
- 230000008020 evaporation Effects 0.000 claims abstract description 135
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 238000002955 isolation Methods 0.000 claims abstract description 42
- 238000000034 method Methods 0.000 claims description 16
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- 239000000463 material Substances 0.000 description 20
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 238000009834 vaporization Methods 0.000 description 8
- 230000008016 vaporization Effects 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 239000010406 cathode material Substances 0.000 description 5
- 239000007769 metal material Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 239000010931 gold Substances 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 238000007747 plating Methods 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
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- 238000000605 extraction Methods 0.000 description 1
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- 238000004020 luminiscence type Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/824—Cathodes combined with auxiliary electrodes
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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Abstract
The invention provides a semiconductor device and a manufacturing method thereof, wherein the manufacturing method comprises the following steps of manufacturing an auxiliary cathode on a substrate; manufacturing an isolation layer with a slot, wherein the width of the bottom of the slot is larger than that of the top of the slot; forming an organic film layer on the substrate through a first evaporation source, wherein steam of the first evaporation source enters the bottom of the slot to form the organic film layer through the part which is not shielded by the top of the slot when the steam passes through the slot; a gap is reserved between the side edge of the organic film layer and the side edge of the slotted bottom, and the auxiliary cathode is exposed; and forming a cathode on the substrate in an evaporation mode, wherein steam during evaporation penetrates through the top of the slot from different angles and covers the whole bottom of the slot, the cathode covers the organic film layer in the slot, and the side edge of the cathode is connected with the auxiliary cathode through the gap. The technical scheme can improve the stability of the cathode in working and avoid the phenomenon of uneven light emission (IR-Drop phenomenon) of a semiconductor device (such as a display panel).
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor device and a manufacturing method thereof.
Background
Since the birth of Organic Light-Emitting Diode (OLED) devices, the OLED devices have been widely used in the display field due to their advantages of self-luminescence, thinness, high response speed and easy realization of flexibility, and are currently the most promising display technology.
The light-emitting portion of an OLED device is mainly composed of a cathode, an anode, and an organic layer sandwiched therebetween. When the OLED device is prepared, an organic film layer is evaporated on a substrate with an anode, and then a cathode is evaporated. In the OLED device, when current is injected from the electrodes into the organic layer to form excitons, light is emitted. The anode of the OLED device is generally made of a metal film layer or ITO, and the cathode is generally made of a metal film layer. For OLED devices requiring light extraction from the cathode, the thickness of the cathode is generally controlled to ensure good transmittance of the cathode
In the meantime. The thin cathode has a relatively large resistance, and during operation, the cathode generates a voltage Drop, which causes the OLED panel to emit light unevenly, i.e., the so-called IR Drop phenomenon.
The larger the size of the OLED device, the more significant the IR Drop phenomenon. In order to improve the display defects, an auxiliary cathode is introduced, namely, a metal layer is prepared as the auxiliary cathode when the substrate is prepared, and the resistance of the cathode is reduced. The structure of the cathode and the auxiliary cathode can also be referred to as CN201710880512.5, entitled OLED panel and method for making the same. However, how to achieve effective bonding of the cathode and the auxiliary cathode is a difficult point in the manufacturing process.
Disclosure of Invention
Therefore, it is desirable to provide a semiconductor device and a method for manufacturing the same, which solve the problem that the cathode and the auxiliary cathode cannot be well connected together.
In order to achieve the above object, the present embodiment provides a method for manufacturing a semiconductor device, including the steps of:
manufacturing an auxiliary cathode on a substrate;
manufacturing an isolation layer with a slot, wherein the width of the bottom of the slot is larger than that of the top of the slot;
forming an organic film layer on the substrate through a first evaporation source, wherein steam of the first evaporation source enters the bottom of the slot to form the organic film layer through the part which is not shielded by the top of the slot when the steam passes through the slot; a gap is reserved between the side edge of the organic film layer and the side edge of the slotted bottom, and the auxiliary cathode is exposed;
and forming a cathode on the substrate in an evaporation mode, wherein steam during evaporation penetrates through the top of the slot from different angles and covers the whole bottom of the slot, the cathode covers the organic film layer in the slot, and the side edge of the cathode is connected with the auxiliary cathode through the gap.
Further, the shape of the cross section of the slot is trapezoidal.
Further, the step of forming a cathode on the substrate by evaporation, wherein the step of covering the cathode with the auxiliary cathode in the slot comprises:
forming a cathode on the substrate by a second evaporation source and a third evaporation source;
the second evaporation source is positioned below the left side of the slotted perpendicular bisector;
the third evaporation source is positioned below the right side of the slotted perpendicular bisector;
the evaporation range of the second evaporation source covers a part of the bottom of the slot, and the evaporation range of the third evaporation source covers the rest part of the bottom of the slot.
Further, the angle between the side wall of the slot and the auxiliary cathode is beta 1, and beta 1 is more than or equal to 30 degrees and less than or equal to 45 degrees.
Further, the first evaporation source is a planar evaporation source, and the evaporation direction of the planar evaporation source is perpendicular to the substrate.
Further, the angle between one side boundary of the evaporation range of the first evaporation source and the direction vertical to the substrate is alpha 1, and alpha 1 is less than or equal to 20 degrees.
Further, the first evaporation source is a point evaporation source which comprises two limiting plates, and the evaporation range of the first evaporation source is adjusted through the two limiting plates;
the two limiting plates are respectively arranged on two sides of the nozzle of the first evaporation source.
The embodiment also provides a semiconductor device including a substrate, an auxiliary cathode, and an isolation layer;
the auxiliary cathode is arranged on the substrate;
the isolation layer comprises a slot, the auxiliary cathode is arranged in the slot of the isolation layer, and the width of the bottom of the slot is greater than that of the top of the slot.
Further, the device also comprises an organic film layer and a cathode;
the machine film layer and the cathode are placed in a slot;
a gap is reserved between the side edge of the organic film layer and the side edge of the slotted bottom, and the auxiliary cathode is exposed;
the cathode covers the organic film layer in the slot, and the side edge of the cathode is connected with the auxiliary cathode through the gap.
Further, the shape of the cross section of the slot is trapezoidal.
Be different from prior art, above-mentioned technical scheme isolation layer blocks that the coating by vaporization material plates to the supplementary cathode department in the fluting, plays the waste of avoiding the coating by vaporization material, has saved the processing cost. This application reduces organic membranous layer width on being on a parallel with supplementary cathodic direction as far as possible to let the regional area grow of overlap joint, after the regional grow of overlap joint, lie in the regional negative pole of overlap joint alright with contact supplementary negative pole more fully. After the auxiliary cathode and the cathode are effectively lapped, the stability of the cathode in work can be improved, and the phenomenon of uneven light emission (IR-Drop phenomenon) of a semiconductor device (such as a display panel) is avoided.
Drawings
FIG. 1 is a schematic cross-sectional view of a semiconductor device according to the present embodiment;
fig. 2 is a schematic structural view of the semiconductor device according to the present embodiment;
FIG. 3 is a schematic cross-sectional view illustrating the fabrication of an organic film by a planar evaporation source according to the present embodiment;
fig. 4 is a schematic cross-sectional structure diagram of the light-emitting region and the non-light-emitting region in this embodiment.
Description of reference numerals:
100. a semiconductor device;
101. a non-light emitting region;
102. a light emitting region;
200. a substrate;
201. a cathode;
202. an auxiliary cathode;
203. a lap joint region;
204. an isolation layer;
205. an organic film layer;
206. an anode;
300. an evaporation source;
301. a first evaporation source;
302. a second evaporation source;
303. a third evaporation source;
304. and a limiting plate.
Detailed Description
To explain technical contents, structural features, and objects and effects of the technical solutions in detail, the following detailed description is given with reference to the accompanying drawings in conjunction with the embodiments.
Referring to fig. 1 to 4, the present embodiment provides a method for manufacturing a semiconductor device, including the following steps: fabricating an auxiliary cathode 202 on the substrate 200; specifically, a layer of photoresist is coated on the substrate 200, and the photoresist is patterned, i.e., exposed and developed, so that the portion where the auxiliary cathode 202 is to be fabricated is opened. An auxiliary cathode material is plated by vapor deposition to form an auxiliary cathode 202 on the substrate 200, and the structure is shown in fig. 1. The auxiliary cathode material can be one or more metals of Al (aluminum), Ag (silver) and Au (gold). The thickness of auxiliary cathode 202 is 1um (micrometers) to 5um (micrometers). After the auxiliary cathode 202 is fabricated, the photoresist is removed.
It should be noted that the substrate 200 is generally made of glass or metal material, and the substrate 200 is a carrier of each film layer of the semiconductor device 100.
After the auxiliary cathode is manufactured, an isolation layer 204 is manufactured, and the isolation layer 204 is used for electrically connecting the auxiliary cathode for isolating metal with other irrelevant metal film layers; specifically, isolation layer 204 is formed on auxiliary cathode 202 by chemical vapor deposition plating with silicon nitride, or other insulating material. The isolation layer 204 can isolate the metal auxiliary cathode from the electrical connection with other unrelated metal film layers, thereby preventing the device from short circuit.
Making a slot on the isolating layer of the auxiliary cathode region, wherein the slot is used for connecting the cathode and the auxiliary cathode; specifically, a layer of photoresist is coated, and then the photoresist is patterned, i.e., exposed and developed, so that the portion to be grooved is opened. Then, the isolation layer is etched to the auxiliary cathode by using the photoresist as a mask to form a trench. The bottom of the groove is provided with an auxiliary cathode, and the structure is shown in figure 1. And after the grooving is finished, removing the photoresist.
Preferably, the cross section of the slot is trapezoidal, and the width of the bottom of the slot is greater than the width of the top of the slot. The lateral wall that the isolation layer closes on fluting department is the slope, and the top that the isolation layer closes on fluting department surpasss the bottom that the isolation layer closes on fluting department for during subsequent material of coating by vaporization, the material of coating by vaporization can be sheltered from by the top that the isolation layer closes on fluting department, and the isolation layer closes on near the bottom of fluting department and just can not have the coating by vaporization material to touch.
Preferably, referring to FIG. 2, the angle between the side wall of the slot and the upper surface of the auxiliary cathode is β 1, and β 1 is not less than 30 ° and not more than 45 °.
In some embodiments, the width of the bottom of the slot of the trapezoid is smaller than the width of the top of the slot, or the cross-section of the slot is rectangular and circular in shape. The present application can form the organic film 205 and the cathode 201 in the slots of these shapes. The isolation layer is used for preventing the evaporation material from being plated on the auxiliary cathode in the slot, so that the waste of the evaporation material is avoided, and the process cost is saved.
Or in some embodiments, the isolation layer may be fabricated by: the isolation column is manufactured outside the semiconductor device, the side wall of the isolation column is inclined, the width of the top of the isolation column is larger than the width of the bottom of the isolation column, and then the isolation columns are welded to the auxiliary cathodes to form the isolation layer. The part between the isolation columns is the slot.
Then, the cathode and the organic film layer 205 are formed by vapor deposition with the surface of the substrate provided with the auxiliary cathode and the separation layer facing downward:
the first evaporation source 301 is located below the slot, the vapor of the first evaporation source 301 enters the bottom of the slot to form the organic film layer through the portion that is not blocked by the top of the slot when passing through the slot, the angle of the evaporation range of the first evaporation source 301 is 2 α 1, and the structure is as shown in fig. 1. Preferably, an angle between a boundary of one side of the vapor deposition range of the first evaporation source 301 and a direction perpendicular to the substrate is α 1, and α 1 is 20 ° or less. The first evaporation source 301 is filled with an organic film material, and the organic film material is coated on the substrate by the first evaporation source 301 to form the organic film 205 on the substrate. The organic film layer 205 is located on the auxiliary cathode at the bottom of the trench, and the auxiliary cathode extends beyond both sides of the organic film layer, i.e. the side of the organic film layer 205 and the side of the bottom of the trench have a gap (i.e. the lap joint region 203) and is exposed. The organic film 205 is located on the auxiliary cathode in the groove, and the auxiliary cathode 202 is exposed outside the organic film 205. Generally, the thickness of the organic film layer 205 is
And the insulating property is better.
Here, a region where the auxiliary cathode is located outside the organic film layer is named as a lap region 203, and the lap region 203 is a connection region of the cathode and the auxiliary cathode. The width of the organic film layer in the direction parallel to the auxiliary cathode is reduced as much as possible by the technical scheme, so that the area of the lap joint area is increased, and the cathode in the lap joint area can be more fully contacted with the auxiliary cathode after the lap joint area is increased. After the auxiliary cathode and the cathode are effectively lapped, the stability of the cathode in work can be improved, and the phenomenon of uneven light emission (IR-Drop phenomenon) of a semiconductor device (such as a display panel) is avoided.
In some embodiments, the first evaporation source 301 is a planar evaporation source, and the evaporation direction of the planar evaporation source is perpendicular to the substrate, as shown in fig. 3. The planar evaporation source does not need to adjust the evaporation angle, and the upward organic film material in the evaporation process can be blocked by the isolation layer and cannot cover the whole area at the bottom of the slot. The organic film layer naturally covers the entire auxiliary cathode, exposing the overlapping area 203 on both sides.
In the prior art, the cathode 201 is formed once, and in the present embodiment, the cathode 201 is formed twice. The cathode can be sequentially formed by the second evaporation source and the third evaporation source, and steam during evaporation penetrates through the top of the slot from different angles and covers the whole bottom of the slot. It is of course also possible to form the cathode by the second evaporation source and the third evaporation source simultaneously. Alternatively, the cathode can be plated by four evaporation sources, five evaporation sources, or even more evaporation sources.
And plating a cathode material on the substrate through a second evaporation source 302 below the substrate, and forming a part of the cathode 201 on the substrate, wherein the part of the cathode 201 covers the auxiliary cathode on the side of the organic film layer in the open groove, and the structure is shown in fig. 1.
Preferably, the second evaporation source 302 is located below the left side of the perpendicular bisector of the slot, and the right boundary of the evaporation range of the second evaporation source 302 is aligned with the connection between the right sidewall of the slot and the auxiliary cathode. The left boundary of the evaporation range of the second evaporation source 302 is located in the slot, and the left boundary of the second evaporation source 302 is aligned with the middle area of the slot.
Preferably, the angle between the left boundary of the evaporation range of the third evaporation source 303 and the direction perpendicular to the substrate is α 2, 35 ° ≦ α 2 ≦ 45 °, and the structure is shown in fig. 1.
And plating a cathode material on the substrate through a third evaporation source 303 below the substrate, forming another part of the cathode 201 on the substrate, covering the auxiliary cathode on the other side of the organic film layer in the slot by another part of the cathode 201, connecting another part of the cathode 201 with a part of the cathode 201, and forming the cathode 201 by another part of the cathode 201 and a part of the cathode 201, wherein the structure is shown in fig. 1.
The cathode covers the organic film layer in the slot, and the side edge of the cathode is connected with the auxiliary cathode through the gap. Wherein the cathode 201 has a thickness of
The evaporation range of the second evaporation source and the evaporation range of the third evaporation source have an overlapping part, namely the position of the left boundary of the evaporation range of the second evaporation source aligned with the organic film layer is left of the position of the right boundary of the evaporation range of the third evaporation source aligned with the organic film layer, so that the cathode parts made by the two evaporation sources are connected together.
Preferably, the third evaporation source 303 is located below the right side of the perpendicular bisector of the slit, the left boundary of the evaporation range of the third evaporation source 303 is aligned with the joint between the left sidewall of the slit and the auxiliary cathode, the right boundary of the evaporation range of the second evaporation source 302 is located in the slit, and the right boundary of the evaporation range of the second evaporation source 302 is aligned with the middle region of the slit.
Preferably, the third evaporation source 303 and the second evaporation source 302 are bilaterally symmetric, and a line of symmetry is perpendicular to the substrate. The angle between the left boundary of the evaporation range of the third evaporation source 303 and the direction perpendicular to the substrate is also alpha 2, and alpha 2 is more than or equal to 35 degrees and less than or equal to 45 degrees.
Preferably, α 1. ltoreq. β 1, β 1. ltoreq. α 2. Because alpha 1 is not more than beta 1, the organic film layer is shielded by the isolation layer, and the lap joint region 203 cannot be plated with the organic film layer material. Because the beta 1 is less than or equal to the alpha 2, the lap joint area 203 above the auxiliary cathode can be completely plated to the cathode material, so that the cathode is connected to the auxiliary cathode through the lap joint area 203, and the conduction between the cathode and the auxiliary cathode is realized.
The two parts of the cathode are connected together in the display area of the whole display panel. Because the auxiliary cathode is made of metal material or alloy with thicker thickness and the resistivity is smaller than that of the cathode, the resistance of the cathode can be effectively reduced through the matching of the auxiliary cathode and the cathode, and the IR-Drop phenomenon of the panel is improved.
In the present embodiment, in order to adjust the evaporation ranges of the first evaporation source 301, the second evaporation source 302 and the third evaporation source 303, the first evaporation source 301, the second evaporation source 302 and the third evaporation source 303 can accurately plate materials onto a target substrate, and the structure is as shown in fig. 1. The first evaporation source 301, the second evaporation source 302, and the third evaporation source 303 are provided with limiting plates 304, respectively, which are made of a high-temperature-resistant metal material, and the limiting plates 304 control the evaporation range (or evaporation angle) of the material. When the first evaporation source 301, the second evaporation source 302, and the third evaporation source 303 are crucibles, nozzles on the crucibles serve as passages through which the evaporation material is discharged. The two limiting plates 304 are disposed opposite to each other, one limiting plate 304 is disposed on one side of the nozzle, and the other limiting plate 304 is disposed on the other side of the nozzle. The vapor deposition material discharged from the nozzle is guided by the limiting plate 304 and falls on the target substrate.
In some embodiments, the method further includes forming an anode 206 on one side of the auxiliary cathode, as shown in FIG. 1.
In the present embodiment, the cathode and the auxiliary cathode are mainly illustrated as being connected in the overlap region. In some embodiments, the fabrication method of the present application is applied to fabrication of other film layers, in which the auxiliary cathode is replaced with a metal, an organic substance, an inorganic substance, or the like having another function, the cathode is replaced with a metal, an organic substance, an inorganic substance, or the like having another function, and the organic film layer is replaced with a metal, an inorganic substance, or the like.
Note that the semiconductor device 100 is a display panel, and the display panel may be an OLED (organic light-Emitting Diode) display panel or an lcd (liquid Crystal display) display panel. The display panel is divided into a light-emitting region 102 and a non-light-emitting region 101, the overlapping region is disposed in the non-light-emitting region 101, and the structure is shown in fig. 4.
Note that the evaporation source 300 includes a first evaporation source 301, a second evaporation source 302, and a third evaporation source 303. The evaporation source 300 may be a crucible of a point source or a crucible of a line source.
Referring to fig. 2 to 4, the present embodiment further provides a semiconductor device including a substrate 200, an auxiliary cathode 202 and an isolation layer 204. The auxiliary cathode 202 is disposed on the substrate 200. The isolation layer 204 includes a slot, the auxiliary cathode 202 is disposed in the slot of the isolation layer 204, and a bottom width of the slot is greater than a top width of the slot.
In order to improve the IR Drop phenomenon, the isolation layer in the technical scheme prevents the evaporation material from being plated on the auxiliary cathode in the slot, so that the waste of the evaporation material is avoided, the process cost is saved, the effective lapping of the cathode and the auxiliary cathode is realized, the stability of the cathode in work is improved, and the phenomenon of uneven light emission (IR Drop phenomenon) of a semiconductor device (such as a display panel) is avoided.
Note that the auxiliary cathode 202 may be one or more metals of Al (aluminum), Ag (silver), Au (gold). The thickness of auxiliary cathode 202 is 1um (micrometers) to 5um (micrometers).
It should be noted that the substrate 200 is generally made of glass or metal material, and the substrate 200 is a carrier of each film layer of the semiconductor device 100.
The isolation layer 204 can isolate the metal auxiliary cathode from the electrical connection with other unrelated metal film layers, thereby preventing the device from short circuit.
Preferably, the cross section of the slot is trapezoidal, the width of the bottom of the slot is greater than that of the top of the slot, and the structure is as shown in fig. 2 and 3. The lateral wall that the isolation layer closes on fluting department is the slope, and the top that the isolation layer closes on fluting department surpasss the bottom that the isolation layer closes on fluting department for during subsequent material of coating by vaporization, the material of coating by vaporization can be sheltered from by the top that the isolation layer closes on fluting department, and the isolation layer closes on near the bottom of fluting department and just can not have the coating by vaporization material to touch.
Referring to fig. 2 to fig. 3, in the present embodiment, the organic film 205 and the cathode 201 are further included, and the organic film 205 and the cathode 201 are disposed in the groove. The side edge of the organic film layer 205 and the side edge of the slotted bottom have a gap (i.e. the lap joint region 203) and the auxiliary cathode 202 is exposed; the cathode 201 covers the organic film 205 in the slot and the side edge is connected with the auxiliary cathode 202 through the gap.
The two parts of the cathode are connected together in the display area of the whole display panel. Because the auxiliary cathode is made of metal material or alloy with thicker thickness and the resistivity is smaller than that of the cathode, the resistance of the cathode can be effectively reduced through the matching of the auxiliary cathode and the cathode, and the IR-Drop phenomenon of the panel is improved.
Note that the semiconductor device 100 is a display panel, and the display panel may be an OLED (organic light-Emitting Diode) display panel or an lcd (liquid Crystal display) display panel. The display panel is divided into a light-emitting region 102 and a non-light-emitting region 101, the overlapping region is disposed in the non-light-emitting region 101, and the structure is shown in fig. 4.
In some embodiments, an anode 206 is also included on one side of the auxiliary cathode, the structure of which is shown in FIG. 2.
It should be noted that, although the above embodiments have been described herein, the invention is not limited thereto. Therefore, based on the innovative concepts of the present invention, the technical solutions of the present invention can be directly or indirectly applied to other related technical fields by making changes and modifications to the embodiments described herein, or by using equivalent structures or equivalent processes performed in the content of the present specification and the attached drawings, which are included in the scope of the present patent.
Claims (10)
1. A method for manufacturing a semiconductor device is characterized by comprising the following steps:
manufacturing an auxiliary cathode on a substrate;
manufacturing an isolation layer with a slot, wherein the width of the bottom of the slot is larger than that of the top of the slot;
forming an organic film layer on the substrate through a first evaporation source, wherein steam of the first evaporation source enters the bottom of the slot to form the organic film layer through the part which is not shielded by the top of the slot when the steam passes through the slot; a gap is reserved between the side edge of the organic film layer and the side edge of the slotted bottom, and the auxiliary cathode is exposed;
and forming a cathode on the substrate in an evaporation mode, wherein steam during evaporation penetrates through the top of the slot from different angles and covers the whole bottom of the slot, the cathode covers the organic film layer in the slot, and the side edge of the cathode is connected with the auxiliary cathode through the gap.
2. A method for fabricating a semiconductor device according to claim 1, wherein a cross-section of the trench is trapezoidal.
3. The method as claimed in claim 2, wherein the step of forming a cathode on the substrate by evaporation, and the step of covering the auxiliary cathode in the trench with the cathode comprises:
forming a cathode on the substrate by a second evaporation source and a third evaporation source;
the second evaporation source is positioned below the left side of the slotted perpendicular bisector;
the third evaporation source is positioned below the right side of the slotted perpendicular bisector;
the evaporation range of the second evaporation source covers a part of the bottom of the slot, and the evaporation range of the third evaporation source covers the rest part of the bottom of the slot.
4. The method of claim 2, wherein an angle between the side wall of the trench and the auxiliary cathode is β 1, and 30 ° < β 1 > and 45 °.
5. The method of claim 1, wherein the first evaporation source is a planar evaporation source, and the evaporation direction of the planar evaporation source is perpendicular to the substrate.
6. The method as claimed in claim 1, wherein an angle between a boundary of one side of the evaporation range of the first evaporation source and a direction perpendicular to the substrate is α 1, and α 1 is 20 ° or less.
7. The manufacturing method of a semiconductor device according to claim 1, wherein the first evaporation source is a point evaporation source, the point evaporation source includes two limiting plates, and the evaporation range of the first evaporation source is adjusted by the two limiting plates;
the two limiting plates are respectively arranged on two sides of the nozzle of the first evaporation source.
8. A semiconductor device includes a substrate, an auxiliary cathode, and an isolation layer;
the auxiliary cathode is arranged on the substrate;
the isolation layer comprises a slot, the auxiliary cathode is arranged in the slot of the isolation layer, and the width of the bottom of the slot is greater than that of the top of the slot.
9. The semiconductor device according to claim 8, further comprising an organic film layer and a cathode;
the machine film layer and the cathode are placed in a slot;
a gap is reserved between the side edge of the organic film layer and the side edge of the slotted bottom, and the auxiliary cathode is exposed;
the cathode covers the organic film layer in the slot, and the side edge of the cathode is connected with the auxiliary cathode through the gap.
10. A semiconductor device according to claim 8, wherein the cross-section of the slot is trapezoidal in shape.
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