CN112331773B - Fully-transparent waterproof flexible organic memristor and preparation method thereof - Google Patents

Fully-transparent waterproof flexible organic memristor and preparation method thereof Download PDF

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CN112331773B
CN112331773B CN202011155925.5A CN202011155925A CN112331773B CN 112331773 B CN112331773 B CN 112331773B CN 202011155925 A CN202011155925 A CN 202011155925A CN 112331773 B CN112331773 B CN 112331773B
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organic
flexible
functional layer
waterproof
flexible substrate
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CN112331773A (en
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陈琳
孟佳琳
王天宇
何振宇
孙清清
张卫
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Fudan University
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Fudan University
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/50—Bistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Abstract

The invention discloses a fully-transparent waterproof flexible organic memristor and a preparation method thereof. This waterproof flexible organic memristor of full transparent includes: a flexible substrate; a bottom electrode formed on the flexible substrate; PSS organic functional layer, form on the bottom electrode; and the top layer electrodes are mutually separated and distributed on the PEDOT/PSS organic functional layer. The invention solves the problem that the performance of an organic material device is easy to be affected by water to cause the performance attenuation or failure of the device, and provides possibility for the waterproof application scene of the organic memristor.

Description

Fully-transparent waterproof flexible organic memristor and preparation method thereof
Technical Field
The invention relates to the technical field of semiconductors, in particular to a fully-transparent waterproof flexible organic memristor and a preparation method thereof.
Background
Currently, fully transparent devices are being paid attention to by researchers due to their high transmittance and potential for integration into display screens for edge computing. Even in some military fields, the fully transparent camouflage device has great application value.
The electronic device is very easy to have the problems of unstable performance, work failure and the like when meeting water, and particularly, the electronic device is more easily influenced by water in the using process for flexible wearable equipment, so that the construction of a novel waterproof device is very important.
The organic material film has good flexibility and is easy to integrate to a flexible substrate. However, organic materials are easily dissolved in water, organic solvents, etc., thereby causing destruction of devices and deterioration of performance.
Disclosure of Invention
In order to solve the above problems, the present invention discloses a fully transparent waterproof flexible organic memristor, comprising: a flexible substrate; a bottom layer electrode formed on the flexible substrate; PSS organic functional layer formed on the bottom electrode;
and the top layer electrodes are mutually separated and distributed on the PEDOT/PSS organic functional layer.
In the fully transparent waterproof flexible organic memristor device, the flexible substrate is preferably PET.
In the fully transparent waterproof flexible organic memristor device, preferably, the bottom electrode is an ITO, ag nanowire or AgS nanowire.
The invention also discloses a preparation method of the fully-transparent waterproof flexible organic memristor, which comprises the following steps: providing a flexible substrate; forming a bottom electrode on the flexible substrate; forming a PEDOT PSS organic functional layer on the bottom layer electrode, and performing low-temperature annealing; and forming a top electrode on the organic functional layer, wherein the top electrodes are mutually distributed on the organic functional layer in an isolated manner.
In the preparation method of the fully-transparent waterproof flexible organic memristor, the flexible substrate is preferably PET.
In the preparation method of the fully-transparent waterproof flexible organic memristor, preferably, the bottom electrode is an ITO, ag nanowire or AgS nanowire.
In the preparation method of the fully-transparent waterproof flexible organic memristor, the low-temperature annealing temperature is preferably 100-130 ℃, and the annealing time is preferably 8-20 min.
In the preparation method of the all-transparent waterproof flexible organic memristor, the PEDOT PSS organic functional layer is preferably formed by a solution spin-coating method.
The invention solves the problem that the performance of an organic material device is easy to be affected by water to cause the performance of the device to be attenuated or invalid, and provides possibility for the waterproof application scene of the organic memristor device. In the process of preparing the device, a low-temperature annealing process is naturally combined, extra treatment and steps are not needed, and the preparation scheme of the waterproof device is simplified. The fully transparent waterproof device enables the device to be integrated with an organic solar cell device with high transmittance, a flexible display screen and the like, and the waterproof function provides a full guarantee for working in an open-air environment.
Drawings
FIG. 1 is a flow chart of a method for manufacturing a fully transparent waterproof flexible organic memristive device of the present invention.
Fig. 2-4 are schematic structural diagrams of steps of a preparation method of a fully-transparent waterproof flexible organic memristive device.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more clearly and completely understood, the technical solutions in the embodiments of the present invention will be described below with reference to the accompanying drawings in the embodiments of the present invention, and it should be understood that the specific embodiments described herein are only for explaining the present invention and are not intended to limit the present invention. The described embodiments are only some embodiments of the invention, not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "upper", "lower", "vertical", "horizontal", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, which are merely for convenience of description and simplification of the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and operate, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
Furthermore, numerous specific details of the invention, such as structure, materials, dimensions, processing techniques and techniques of the devices are described below in order to provide a more thorough understanding of the invention. However, as will be understood by those skilled in the art, the present invention may be practiced without these specific details. Unless otherwise specified below, each part in the device may be formed of a material known to those skilled in the art, or a material having a similar function developed in the future may be used.
FIG. 1 is a flow chart of a preparation method of a fully transparent waterproof flexible organic memristive device. Fig. 2 to 4 are schematic structural diagrams of steps of a preparation method of the fully transparent waterproof flexible organic memristive device.
In step S1, a 2cm × 2cm flexible polyethylene terephthalate (PET) substrate 100 is prepared for preparing a fully transparent waterproof flexible organic memristive device. The device is completely prepared on a flexible substrate PET, and meanwhile, the flexible technical effect of the whole device is realized by virtue of the excellent flexibility and stretchability of the organic material.
In step S2, ITO (indium tin oxide) is sputter-grown by physical vapor deposition to a thickness of 70nm as the bottom electrode 101, and the resulting structure is shown in fig. 2. The bottom layer electrode is preferably ITO, and can also be an Ag nanowire, an AgS nanowire and the like; the thickness range can be 50 nm-100 nm.
In step S3, the organic functional layer 102 of poly (3, 4-ethylenedioxythiophene) -polystyrene sulfonic acid (PEDOT: PSS) is prepared by a solution spin coating method, and is spin-coated for 45S at a rotation speed of 4000 rpm, and the obtained structure is shown in FIG. 3. The rotation speed is preferably 3000-4500 rpm, and the spin coating time can be 40-1 min30s.
In step S4, low temperature annealing at 120 ℃ is subsequently completed using a hot plate for 10min. The annealing temperature range can be 100-130 ℃; the annealing time can be 8 min-20 min. If the annealing time is too short, the crystallization process of the material cannot be completed, and the waterproof function cannot be realized. If the annealing time is too long, the performance of the material is easily changed, and stable memristive performance cannot be obtained. The crystallization of the PEDOT/PSS material is realized by carrying out low-temperature annealing treatment on the organic material PEDOT/PSS, so that the waterproof function of the PEDOT/PSS-based organic material device is realized.
In step S5, a hard mask is used, ITO with a thickness of 70nm is sputtered and grown by physical vapor deposition to serve as the top electrode 103, so that the preparation of the fully transparent waterproof flexible organic memristor array is completed, and the obtained structure is shown in fig. 4. The thickness range of the top electrode can be 50 nm-100 nm.
As shown in fig. 4, the fully transparent waterproof flexible organic memristor of the present disclosure includes a flexible substrate 100; a bottom layer electrode 101 formed on the flexible substrate 100; PSS organic functional layer 102, form on bottom electrode 101; and the top layer electrodes 103 are distributed on the PEDOT/PSS organic functional layer 102 in an isolated mode. The flexible substrate is preferably PET, the bottom electrode is preferably ITO, and the flexible substrate can also be Ag nanowires, agS nanowires and the like. The top electrode is preferably ITO.
The invention solves the problem that the performance of an organic material device is easy to be affected by water to cause the performance attenuation or failure of the device, and provides possibility for the waterproof application scene of the organic memristor. In the process of preparing the device, a low-temperature annealing process is naturally combined, extra treatment and steps are not needed, and the preparation scheme of the waterproof device is simplified. In addition, the transparent substrate is selected, the ITO fully transparent electrode is selected as the working electrode, the transparent organic material layer is selected as the functional layer, and the fully transparent technical effect of the device is achieved together. The fully transparent waterproof device enables the device to be integrated with an organic solar cell device with high transmittance, a flexible display screen and the like, and the waterproof function provides a full guarantee for working in the open air
The above description is only for the specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention.

Claims (6)

1. A fully transparent waterproof flexible organic memristor is characterized in that,
the method comprises the following steps:
a flexible substrate;
a bottom layer electrode formed on the flexible substrate;
PSS organic functional layer, form on the bottom electrode;
top electrodes which are mutually separated and distributed on the PEDOT PSS organic functional layer,
the bottom electrode and the top electrode are ITO.
2. The fully transparent, waterproof, flexible organic memristive device of claim 1,
the flexible substrate is PET.
3. A preparation method of a fully transparent waterproof flexible organic memristor is characterized in that,
the method comprises the following steps:
providing a flexible substrate;
forming a bottom layer electrode on the flexible substrate;
forming a PEDOT (PSS) organic functional layer on the bottom layer electrode, and carrying out low-temperature annealing;
forming top electrodes on the organic functional layer, wherein the top electrodes are mutually separated and distributed on the organic functional layer,
the bottom layer electrode and the top layer electrode are made of ITO.
4. The method of preparing an all-transparent waterproof flexible organic memristive device according to claim 3,
the flexible substrate is PET.
5. The method of preparing an all-transparent waterproof flexible organic memristive device according to claim 3,
the low-temperature annealing temperature is 100-130 ℃, and the annealing time is 8-20 min.
6. The method of making an all-transparent, waterproof, flexible organic memristive device according to claim 3,
and forming the PEDOT-PSS organic functional layer by adopting a solution spin-coating method.
CN202011155925.5A 2020-10-26 2020-10-26 Fully-transparent waterproof flexible organic memristor and preparation method thereof Active CN112331773B (en)

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