CN112311372A - IGBT drive circuit and device - Google Patents

IGBT drive circuit and device Download PDF

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Publication number
CN112311372A
CN112311372A CN202011281855.8A CN202011281855A CN112311372A CN 112311372 A CN112311372 A CN 112311372A CN 202011281855 A CN202011281855 A CN 202011281855A CN 112311372 A CN112311372 A CN 112311372A
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China
Prior art keywords
igbt
triode
circuit
driving
voltage
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CN202011281855.8A
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Chinese (zh)
Inventor
张珊
俞贤桥
王京
黄猛
陈宁宁
杨博
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Gree Electric Appliances Inc of Zhuhai
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Gree Electric Appliances Inc of Zhuhai
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Priority to CN202011281855.8A priority Critical patent/CN112311372A/en
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage

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Abstract

The invention relates to the technical field of IGBT driving, in particular to a driving circuit and a driving device of an IGBT, which comprise a driving optocoupler and a pulse clamping sub-circuit, wherein the driving optocoupler is used for outputting a control signal, the pulse clamping sub-circuit is driven to switch the working state of an IGBT device, the voltage of the IGBT device in the switching working state is clamped, the spike pulse generated by a grid electrode in the switching working state of the IGBT device is inhibited, and the risk of mistakenly switching on the IGBT is effectively avoided.

Description

IGBT drive circuit and device
Technical Field
The invention relates to the technical field of IGBT driving, in particular to a driving circuit and a driving device of an IGBT.
Background
An IGBT, i.e., an insulated gate bipolar transistor, is a composite fully-controlled voltage-driven power semiconductor device composed of a bipolar transistor and an insulated gate field effect transistor, and is increasingly widely used in the fields of motor driving, inverters and the like because the IGBT has low driving power and a reduced saturation voltage.
With the increase of the use frequency of the IGBT, the problem of damage of the IGBT is frequent, the drive and the protection of the IGBT are more and more emphasized, and more manufacturers develop the IGBT drive optocoupler to drive and protect the IGBT successively. However, in practical application and testing of the IGBT driving circuit, the IGBT gate turn-on and turn-off pulses generate many voltage spikes, and even in the IGBT turn-off state, pulse spikes close to the IGBT turn-on voltage in the forward direction are generated, so that the IGBT is at risk of being turned on by mistake.
Disclosure of Invention
In view of the above, the present invention provides a driving circuit and a device for an IGBT, so as to overcome the problem that the IGBT is prone to be turned on by mistake.
In order to achieve the purpose, the invention adopts the following technical scheme:
a drive circuit of an IGBT comprises a drive optocoupler and a pulse clamp sub-circuit;
the first end of the driving optocoupler is connected with the input end of the pulse clamping sub-circuit, and the output end of the pulse clamping sub-circuit is connected with the grid electrode of the IGBT device;
the driving optocoupler is used for outputting a control signal, driving the pulse clamping sub-circuit to switch the working state of the IGBT device, clamping the voltage of the IGBT device when the IGBT device is switched to the working state, and inhibiting spike pulse generated when the IGBT device is switched to the working state.
Further, in the above IGBT driving circuit, the pulse clamp sub-circuit includes a signal gating unit and two paths of execution units;
the input end of the signal gating unit is used as the input end of the pulse clamping sub-circuit, the first output end of the signal gating unit is connected with the input end of one path of the execution unit, and the second output end of the signal gating unit is connected with the input end of the other path of the execution unit; the signal gating unit is used for gating a first output end of the signal gating unit or gating a second output end of the signal gating unit according to the control signal;
and the output ends of the two paths of execution units are used as the output ends of the pulse clamping sub-circuit.
Further, in the above IGBT driving circuit, the signal gating unit includes a first transistor and a second transistor;
a first end of the first triode and a first end of the second triode are used as input ends of the signal gating unit, a second end of the first triode is connected with a positive voltage power supply, a second end of the second triode is connected with a negative voltage power supply, a third end of the first triode is used as a first output end of the signal gating unit, and a third end of the second triode is used as a second output end of the signal gating unit;
when the control signal comprises a positive voltage signal, the first triode is switched on to gate the first output end of the signal gating unit; when the control signal comprises a negative voltage signal, the second triode is switched on to gate the second output end of the signal gating unit.
Further, in the above IGBT driving circuit, the first transistor includes an NPN transistor, and the second transistor includes a PNP transistor;
the first ends of the first triode and the second triode are both bases, the second ends of the first triode and the second triode are both collectors, and the third ends of the first triode and the second triode are both emitters.
Furthermore, in the above IGBT driving circuit, each of the execution units includes a third transistor and a voltage regulator tube;
the first end of the third triode is used as the input end of each path of execution unit, the second end of the third triode is connected with the first end of the voltage-stabilizing tube, the third end of the third triode is connected with the ground wire, and the second end of the voltage-stabilizing tube is connected with the first end of the third triode and is used as the output end of each path of execution unit;
if the first output end of the signal gating unit is gated, a third triode in an execution unit connected with the first output end of the signal gating unit is switched on, the grid voltage value of the IGBT device is larger than a switching-on threshold value, and the IGBT device is switched on; a voltage stabilizing tube of the execution unit connected with the first output end of the signal gating unit clamps the voltage of the IGBT device when the IGBT device is switched on and inhibits spike pulse generated when the IGBT device is switched on;
if the second output end of the signal gating unit is gated, a third triode in the execution unit connected with the second output end of the signal gating unit is switched on, the grid voltage value of the IGBT device is smaller than a switching-off threshold value, and the IGBT device is switched off; and a voltage stabilizing tube of the execution unit connected with the second output end of the signal gating unit clamps the voltage of the IGBT device when the IGBT device is turned off, and inhibits spike pulse generated when the IGBT device is turned off.
Further, in the above IGBT driving circuit, the third transistor includes an NPN transistor;
the first end of the third triode is a base electrode, the second end of the third triode is a collector electrode, and the third end of the third triode is an emitter electrode.
Further, in the above IGBT driving circuit, each of the execution units further includes a first resistor;
the first end of the first resistor is connected with the first end of the third triode, and the second end of the first resistor is connected with the second end of the voltage regulator tube.
Further, the drive circuit of the IGBT further includes a second resistor and a first capacitor;
and the first end of the second resistor and the first end of the first capacitor are respectively connected with the second end of the voltage regulator tube, and the second end of the second resistor and the second end of the first capacitor are connected with the ground wire.
Furthermore, the drive circuit of the IGBT further includes a desaturation detection sub-circuit;
the first end of the desaturation detection sub-circuit is connected with the second end of the driving optocoupler, the second end of the desaturation detection sub-circuit is connected with the third end of the driving optocoupler, and the third end of the saturation detection sub-circuit is connected with the drain electrode of the IGBT device;
and the third end of the driving optocoupler acquires pin detection voltage positively correlated with the voltage of the IGBT device based on the desaturation detection sub-circuit, and controls the first end of the driving optocoupler to output the negative voltage signal if the pin detection voltage is greater than a preset threshold value.
Further, in the above IGBT driving circuit, the desaturation detection sub-circuit includes a third resistor, a second capacitor, and a diode;
the first end of the second capacitor is connected with a ground wire and is used as the first end of the desaturation detection sub-circuit;
a second end of the second capacitor and a first end of the third resistor are used as a second end of the saturation detection sub-circuit, a second end of the third resistor is connected with an anode end of the diode, and a cathode end of the diode is used as a third end of the desaturation detection sub-circuit;
and the source electrode of the IGBT device is connected with the ground wire.
Further, the drive circuit of the IGBT further includes a third capacitor, a fourth capacitor, and a fifth capacitor;
the first end of the third capacitor and the first end of the fourth capacitor are both connected with the second end of the driving optocoupler, the second end of the third capacitor and the first end of the fifth capacitor are both connected with the fourth end of the driving optocoupler, and the second end of the fourth capacitor and the second end of the fifth capacitor are both connected with the fifth end of the driving optocoupler;
the fourth end of the driving optocoupler is also connected with the positive voltage power supply, and the fifth end of the driving optocoupler is also connected with the negative voltage power supply.
Further, the drive circuit of the IGBT further includes a fourth resistor and a fifth resistor;
the first output end of the signal gating unit is connected with the input end of one path of the execution unit through the fourth resistor, and the second output end of the signal gating unit is connected with the input end of the other path of the execution unit through the fifth resistor.
Further, the above IGBT driving circuit further includes a sixth resistor;
and the first end of the driving optocoupler is connected with the input end of the pulse clamping sub-circuit through the sixth resistor.
The invention also provides a driving device of the IGBT, which comprises an IGBT device and any one of the IGBT driving circuits.
The driving circuit and the driving device of the IGBT comprise the driving optical coupler and the pulse clamping sub-circuit, wherein the driving optical coupler is used for outputting a control signal, the pulse clamping sub-circuit is driven to switch the working state of the IGBT device, the voltage of the IGBT device in the switching working state is clamped, peak pulses generated by a grid electrode in the switching working state of the IGBT device are inhibited, and the risk of mistaken switching of the IGBT is effectively avoided.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a circuit block diagram provided by an embodiment of a driving circuit of an IGBT of the present invention;
FIG. 2 is a circuit diagram of one embodiment of the IGBT driving circuit of the present invention;
fig. 3 is a circuit block diagram provided by an embodiment of the IGBT driving device of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be described in detail below. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the examples given herein without any inventive step, are within the scope of the present invention.
Fig. 1 is a circuit block diagram provided by an embodiment of the drive circuit of the IGBT of the present invention. As shown in fig. 1, the driving circuit of the IGBT of this embodiment includes a driving optocoupler 10 and a pulse clamp sub-circuit 11. The first end of the driving optocoupler 10 is connected with the input end of the pulse clamp sub-circuit 11, and the output end of the pulse clamp sub-circuit 11 is connected with the grid electrode of the IGBT device 20.
In this embodiment, the driving optocoupler 10 is configured to output a control signal, and the driving pulse clamp sub-circuit 11 switches the operating state of the IGBT device 20 according to the control signal output by the driving optocoupler 10, and clamps the voltage when the IGBT device 20 switches the operating state, so as to suppress spike pulses generated when the IGBT device 20 switches the operating state.
Further, in the driving circuit of the IGBT according to the present embodiment, the pulse clamp sub-circuit 11 includes a signal gating unit 111 and a two-way execution unit 112. In this embodiment, the two execution units may be a first execution unit 1121 and a second execution unit 1122, respectively.
The input end of the signal gating unit 111 is used as the input end of the pulse clamping sub-circuit 11, the first output end of the signal gating unit 111 is connected with the input end of one path of execution unit 112, the second output end of the signal gating unit 111 is connected with the input end of the other path of execution unit 112, and the output ends of the two paths of execution units 112 are used as the output ends of the pulse clamping sub-circuit 11. In one specific embodiment, a first output terminal of the signal gating cell 111 is connected to an input terminal of the first execution unit 1121, and a second output terminal of the signal gating cell 111 is connected to an input terminal of the second execution unit 1122, as shown in FIG. 1.
The signal gating unit 111 is used to gate a first output terminal of the signal gating unit 111 or gate a second output terminal of the signal gating unit 111 according to a control signal. If the signal gating unit 111 gates the first output end of the signal gating unit 111 according to the control signal, the driving optocoupler 10, the signal gating unit 111, the execution unit 112 (the first execution unit 1121 of the embodiment) connected to the first output end of the signal gating unit 111, and the IGBT device 20 form a path capable of transmitting signals; if the signal gating unit 111 gates the second output end of the signal gating unit 111 according to the control signal, the driving optocoupler 10, the signal gating unit 111, the execution unit 112 (the second execution unit 1122 of the present embodiment) connected to the second output end of the signal gating unit 111, and the IGBT device 20 form a path capable of transmitting signals.
Fig. 2 is a circuit diagram provided by an embodiment of the drive circuit of the IGBT of the present invention.
The structure of the signal gating cell 111 is shown in fig. 2. Specifically, the signal gating unit 111 in the driving circuit of the IGBT of the present embodiment includes a first transistor Q1 and a second transistor Q2.
As shown in fig. 2, a first end of the first transistor Q1 and a first end of the second transistor Q2 are used as input ends of the signal gating unit 111, a second end of the first transistor Q1 is connected to the positive voltage power VCC1, a second end of the second transistor Q2 is connected to the negative voltage power VCC2, a third end of the first transistor Q1 is used as a first output end of the signal gating unit 111, and a third end of the second transistor Q2 is used as a second output end of the signal gating unit 111.
In this embodiment, when the output control signal includes a positive voltage signal, the first transistor Q1 is turned on, and gates the first output terminal of the signal gating unit 111; when the output control signal includes the negative voltage signal, the second transistor Q2 is turned on to gate the second output terminal of the signal gating unit 111.
In one specific embodiment, the first transistor Q1 comprises an NPN transistor, the second transistor Q2 comprises a PNP transistor, and, as shown in fig. 2, the first terminals of the first transistor Q1 and the second transistor Q2 are both bases, the second terminals of the first transistor Q1 and the second transistor Q2 are both collectors, and the third terminals of the first transistor Q1 and the second transistor Q2 are both emitters. When the control signal output by the first end of the driving optocoupler 10 includes a positive voltage signal, the NPN type transistor, i.e., the first transistor Q1, is turned on, and when the control signal output by the first end of the driving optocoupler 10 includes a negative voltage signal, the PNP type transistor, i.e., the second transistor Q2, is turned on.
Further, the structure of the execution unit 112 is shown in fig. 2. Each of the execution units 112 includes a third transistor Q3 and a voltage regulator D1. In one particular embodiment, the zener diode D1 is a bidirectional transient suppression diode.
The first end of the third triode Q3 is used as the input end of each execution unit 112, the second end of the third triode Q3 is connected with the first end of the voltage regulator tube D1, the third end of the third triode Q3 is connected with the ground wire, the second end of the voltage regulator tube D1 is connected with the first end of the third triode Q3, and the second end of the voltage regulator tube D1 is also used as the output end of each execution unit 112.
In one specific embodiment, the third transistor Q3 comprises an NPN transistor, and the first terminal of the third transistor Q3 is a base, the second terminal of the third transistor Q3 is a collector, and the third terminal of the third transistor Q3 is an emitter.
Specifically, if the output control signal includes a positive voltage signal, the first transistor Q1 is turned on, the emitter of the first transistor Q1 outputs a high potential, the base voltage of the third transistor Q3 in the first execution unit 1121 is raised, the voltage value of the node a in fig. 2 is greater than the turn-on threshold of the third transistor Q3 in the first execution unit 1121, the third transistor Q3 in the first execution unit 1121 is turned on, and the voltage value of the node B in fig. 2 is greater than the turn-on threshold of the IGBT device 20, so that the IGBT device 20 is turned on. At this time, the voltage regulator D1 in the first execution unit 1121 clamps the voltage of the IGBT device 20 at the time of turning on to a normal operating level, and suppresses a spike pulse generated when the IGBT device 20 is turned on.
Specifically, if the output control signal includes a negative voltage signal, the second transistor Q2 is turned on, the voltage value of the node C in fig. 2 is greater than the turn-on threshold of the third transistor Q3 in the second execution unit 1122, the third transistor Q3 in the second execution unit 1122 is turned on, and the voltage value of the node B in fig. 2 is less than the turn-off threshold of the IGBT device 20, and the IGBT device 20 is turned off; the voltage regulator D1 in the second execution unit 1122 clamps the voltage of the IGBT device 20 when it is turned off, and when interference of forward IGBT turn-off pulses occurs, the voltage regulator D1 can suppress these forward spike pulses at a low level, suppress spike pulses generated when the IGBT device 20 is turned off, and prevent the IGBT device 20 from being turned on by mistake.
Further, in the driving circuit of the IGBT of this embodiment, each of the execution units 112 further includes a first resistor R1, as shown in fig. 2, a first end of the first resistor R1 is connected to a first end of the third transistor Q3, and a second end of the first resistor R1 is connected to a second end of the regulator D1.
Further, the driving circuit of the IGBT of the present embodiment further includes a second resistor R2 and a first capacitor C1. The first end of the second resistor R2 and the first end of the first capacitor C1 are respectively connected with the second end of the voltage regulator tube D1, and the second end of the second resistor R2 and the second end of the first capacitor C1 are both connected with the ground wire.
Further, the driving circuit of the IGBT of this embodiment further includes a fourth resistor R4 and a fifth resistor R5, the first output terminal of the signal gating unit 111 is connected to the input terminal of one of the execution units 112 through the fourth resistor R4, and the second output terminal of the signal gating unit 111 is connected to the input terminal of the other execution unit 112 through the fifth resistor R5. In this embodiment, the first output terminal of the signal gating unit 111 is connected to the input terminal of the first execution unit 1121 through a fourth resistor R4, and the second output terminal of the signal gating unit 111 is connected to the input terminal of the second execution unit 1122 through a fifth resistor R5.
The first resistor R1, the second resistor R2, the fourth resistor R4, and the fifth resistor R5 are voltage dividing resistors.
Further, the driving circuit of the IGBT according to this embodiment further includes a sixth resistor R6, and the first end of the driving optocoupler 10 is connected to the input end of the pulse clamp sub-circuit 11 through the sixth resistor R6.
Further, the driving circuit of the IGBT according to the present embodiment further includes a desaturation detection sub-circuit 12. The first end of the desaturation detection sub-circuit 12 is connected with the second end of the driving optocoupler 10, the second end of the desaturation detection sub-circuit 12 is connected with the third end of the driving optocoupler 10, and the third end of the desaturation detection sub-circuit is connected with the drain electrode of the IGBT device 20.
In this embodiment, the third end of the driving optocoupler 10 obtains the pin detection voltage positively correlated to the voltage of the IGBT device 20 based on the desaturation detection sub-circuit 12, and controls the first end of the driving optocoupler 10 to output a negative voltage signal if the pin detection voltage is greater than the preset threshold.
Specifically, as shown in fig. 2, the desaturation detection sub-circuit 12 includes a third resistor R3, a second capacitor C2 and a diode D2, a first terminal of the second capacitor C2 is connected to the ground and serves as a first terminal of the desaturation detection sub-circuit 12, a second terminal of the second capacitor C2 and a first terminal of the third resistor R3 serve as second terminals of the saturation detection sub-circuit, a second terminal of the third resistor R3 is connected to an anode terminal of the diode D2, a cathode terminal of the diode D2 serves as a third terminal of the desaturation detection sub-circuit 12, and a source of the IGBT device 20 is connected to the ground.
The driving circuit of the IGBT of this embodiment further includes a third capacitor C3, a fourth capacitor C4, and a fifth capacitor C5, where a first end of the third capacitor C3 and a first end of the fourth capacitor C4 are both connected to the second end of the driving optocoupler 10, a second end of the third capacitor C3 and a first end of the fifth capacitor C5 are both connected to the fourth end of the driving optocoupler 10, and a second end of the fourth capacitor C4 and a second end of the fifth capacitor C5 are both connected to the fifth end of the driving optocoupler 10; the fourth end of the driving optocoupler 10 is also connected with a positive voltage power supply VCC1, and the fifth end of the driving optocoupler 10 is also connected with a negative voltage power supply VCC 2.
Specifically, when the IGBT device 20 is normally turned on, the third end of the driving optocoupler 10 outputs a weak current, and detects a pin detection voltage, and at this time, the pin detection voltage is lower than a preset threshold of the third end trigger voltage of the driving optocoupler 10, and the optocoupler does not report an overcurrent fault. If the output current of the third end of the driving optocoupler 10 is I1The voltage value is then:
U1＝Vce+VD2+I1×R3
where Vce is the voltage of IGBT device 20, VD2Is the voltage of the second diode D2, and R3 is the resistance of the third resistor R3.
When overcurrent fault occurs, Vce rises, the pin detection voltage at the third end of the driving optocoupler 10 rises, the fifth capacitor C5 starts to charge, when the fifth capacitor C5 charges to the preset threshold value of the trigger voltage at the third end of the driving optocoupler 10, the driving optocoupler 10 generates an overcurrent fault signal, and the first end of the driving optocoupler 10 outputs a negative voltage signal as a turn-off pulse of the IGBT device 20 to turn off the IGBT device 20.
In a specific embodiment, the first end of the driving optocoupler 10 is a VOUT pin in fig. 2, the second end of the driving optocoupler 10 is a VE pin in fig. 2, the third end of the driving optocoupler 10 is a DESAT pin in fig. 2, the fourth end of the driving optocoupler 10 is a VCC2 pin in fig. 2, and the fifth end of the driving optocoupler 10 is a VEE pin in fig. 2.
The drive circuit of the IGBT of the embodiment comprises a drive optical coupler 10 and a pulse clamping sub-circuit 11, wherein the drive optical coupler 10 is used for outputting a control signal, the drive pulse clamping sub-circuit 11 switches the working state of the IGBT device 20, the voltage of the IGBT device 20 in the switching working state is clamped, the spike pulse generated by a grid electrode in the switching working state of the IGBT device 20 is inhibited, and the risk of mistakenly switching on the IGBT is effectively avoided.
Based on a general inventive concept, the present application also provides a driving apparatus of the IGBT. Fig. 3 is a circuit block diagram provided by an embodiment of the IGBT driving device of the present invention. As shown in fig. 3, the driving apparatus of the IGBT of the present embodiment includes an IGBT device 20 and a driving circuit 21 of the IGBT of the above embodiment. The IGBT device 20 is connected to a drive circuit 21 of the IGBT.
It is understood that the same or similar parts in the above embodiments may be mutually referred to, and the same or similar parts in other embodiments may be referred to for the content which is not described in detail in some embodiments.
It should be noted that the terms "first," "second," and the like in the description of the present invention are used for descriptive purposes only and are not to be construed as indicating or implying relative importance. Further, in the description of the present invention, the meaning of "a plurality" means at least two unless otherwise specified.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.

Claims (14)

1. A drive circuit of an IGBT is characterized by comprising a drive optocoupler and a pulse clamp sub-circuit;
the first end of the driving optocoupler is connected with the input end of the pulse clamping sub-circuit, and the output end of the pulse clamping sub-circuit is connected with the grid electrode of the IGBT device;
the driving optocoupler is used for outputting a control signal, driving the pulse clamping sub-circuit to switch the working state of the IGBT device, clamping the voltage of the IGBT device when the IGBT device is switched to the working state, and inhibiting spike pulse generated when the IGBT device is switched to the working state.
2. The IGBT driving circuit according to claim 1, wherein the pulse clamp sub-circuit comprises a signal gating unit and a two-way execution unit;
the input end of the signal gating unit is used as the input end of the pulse clamping sub-circuit, the first output end of the signal gating unit is connected with the input end of one path of the execution unit, and the second output end of the signal gating unit is connected with the input end of the other path of the execution unit; the signal gating unit is used for gating a first output end of the signal gating unit or gating a second output end of the signal gating unit according to the control signal;
and the output ends of the two paths of execution units are used as the output ends of the pulse clamping sub-circuit.
3. The IGBT driving circuit according to claim 2, wherein the signal gating unit comprises a first transistor and a second transistor;
a first end of the first triode and a first end of the second triode are used as input ends of the signal gating unit, a second end of the first triode is connected with a positive voltage power supply, a second end of the second triode is connected with a negative voltage power supply, a third end of the first triode is used as a first output end of the signal gating unit, and a third end of the second triode is used as a second output end of the signal gating unit;
when the control signal comprises a positive voltage signal, the first triode is switched on to gate the first output end of the signal gating unit; when the control signal comprises a negative voltage signal, the second triode is switched on to gate the second output end of the signal gating unit.
4. The IGBT driving circuit according to claim 3, wherein the first transistor comprises an NPN transistor and the second transistor comprises a PNP transistor;
the first ends of the first triode and the second triode are both bases, the second ends of the first triode and the second triode are both collectors, and the third ends of the first triode and the second triode are both emitters.
5. The IGBT driving circuit according to claim 2, wherein each of the execution units comprises a third triode and a voltage regulator tube;
the first end of the third triode is used as the input end of each path of execution unit, the second end of the third triode is connected with the first end of the voltage-stabilizing tube, the third end of the third triode is connected with the ground wire, and the second end of the voltage-stabilizing tube is connected with the first end of the third triode and is used as the output end of each path of execution unit;
if the first output end of the signal gating unit is gated, a third triode in an execution unit connected with the first output end of the signal gating unit is switched on, the grid voltage value of the IGBT device is larger than a switching-on threshold value, and the IGBT device is switched on; a voltage stabilizing tube of the execution unit connected with the first output end of the signal gating unit clamps the voltage of the IGBT device when the IGBT device is switched on and inhibits spike pulse generated when the IGBT device is switched on;
if the second output end of the signal gating unit is gated, a third triode in the execution unit connected with the second output end of the signal gating unit is switched on, the grid voltage value of the IGBT device is smaller than a switching-off threshold value, and the IGBT device is switched off; and a voltage stabilizing tube of the execution unit connected with the second output end of the signal gating unit clamps the voltage of the IGBT device when the IGBT device is turned off, and inhibits spike pulse generated when the IGBT device is turned off.
6. The IGBT driving circuit according to claim 5, wherein the third transistor comprises an NPN transistor;
the first end of the third triode is a base electrode, the second end of the third triode is a collector electrode, and the third end of the third triode is an emitter electrode.
7. The IGBT driving circuit according to claim 5, wherein each of the execution units further comprises a first resistor;
the first end of the first resistor is connected with the first end of the third triode, and the second end of the first resistor is connected with the second end of the voltage regulator tube.
8. The IGBT driving circuit according to claim 5, further comprising a second resistor and a first capacitor;
and the first end of the second resistor and the first end of the first capacitor are respectively connected with the second end of the voltage regulator tube, and the second end of the second resistor and the second end of the first capacitor are connected with the ground wire.
9. The IGBT driving circuit according to claim 3, further comprising a desaturation detection sub-circuit;
the first end of the desaturation detection sub-circuit is connected with the second end of the driving optocoupler, the second end of the desaturation detection sub-circuit is connected with the third end of the driving optocoupler, and the third end of the desaturation detection sub-circuit is connected with the drain electrode of the IGBT device;
and the third end of the driving optocoupler acquires pin detection voltage positively correlated with the voltage of the IGBT device based on the desaturation detection sub-circuit, and controls the first end of the driving optocoupler to output the negative voltage signal if the pin detection voltage is greater than a preset threshold value.
10. The IGBT driving circuit according to claim 9, wherein the desaturation detection sub-circuit comprises a third resistor, a second capacitor and a diode;
the first end of the second capacitor is connected with a ground wire and is used as the first end of the desaturation detection sub-circuit;
a second end of the second capacitor and a first end of the third resistor are used as a second end of the saturation detection sub-circuit, a second end of the third resistor is connected with an anode end of the diode, and a cathode end of the diode is used as a third end of the desaturation detection sub-circuit;
and the source electrode of the IGBT device is connected with the ground wire.
11. The IGBT driving circuit according to claim 9, further comprising a third capacitance, a fourth capacitance, and a fifth capacitance;
the first end of the third capacitor and the first end of the fourth capacitor are both connected with the second end of the driving optocoupler, the second end of the third capacitor and the first end of the fifth capacitor are both connected with the fourth end of the driving optocoupler, and the second end of the fourth capacitor and the second end of the fifth capacitor are both connected with the fifth end of the driving optocoupler;
the fourth end of the driving optocoupler is also connected with the positive voltage power supply, and the fifth end of the driving optocoupler is also connected with the negative voltage power supply.
12. The drive circuit of the IGBT according to claim 2, further comprising a fourth resistor and a fifth resistor;
the first output end of the signal gating unit is connected with the input end of one path of the execution unit through the fourth resistor, and the second output end of the signal gating unit is connected with the input end of the other path of the execution unit through the fifth resistor.
13. The IGBT driving circuit according to claim 1, further comprising a sixth resistor;
and the first end of the driving optocoupler is connected with the input end of the pulse clamping sub-circuit through the sixth resistor.
14. A driving apparatus of an IGBT, characterized by comprising an IGBT device and a driving circuit of the IGBT according to any one of claims 1 to 13.
CN202011281855.8A 2020-11-16 2020-11-16 IGBT drive circuit and device Pending CN112311372A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202011281855.8A CN112311372A (en) 2020-11-16 2020-11-16 IGBT drive circuit and device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202011281855.8A CN112311372A (en) 2020-11-16 2020-11-16 IGBT drive circuit and device

Publications (1)

Publication Number Publication Date
CN112311372A true CN112311372A (en) 2021-02-02

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202011281855.8A Pending CN112311372A (en) 2020-11-16 2020-11-16 IGBT drive circuit and device

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CN (1) CN112311372A (en)

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