CN112309896A - 基板冷却装置及方法 - Google Patents
基板冷却装置及方法 Download PDFInfo
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- 238000001816 cooling Methods 0.000 title claims abstract description 140
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- 230000017525 heat dissipation Effects 0.000 claims description 18
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- 238000004378 air conditioning Methods 0.000 claims 2
- 230000000630 rising effect Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 16
- 238000009529 body temperature measurement Methods 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 6
- 230000001276 controlling effect Effects 0.000 description 4
- 239000012809 cooling fluid Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
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- 229910052751 metal Inorganic materials 0.000 description 1
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- 238000000206 photolithography Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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Abstract
本发明提供一种冷却基板的基板冷却装置。本发明的实施例的基板冷却装置包括:卡盘,供放置基板;冷却单元,用于冷却所述卡盘,所述冷却单元包括:散热板,在上面放置所述卡盘,并散发所述卡盘的热。
Description
技术领域
本发明涉及一种冷却基板的基板冷却装置及方法。
背景技术
半导体集成电路一般为非常小且薄的硅片,但由各种电子零件构成,包含光刻工艺、蚀刻工艺、沉积工艺等而执行各种制造工艺,直至出现一个半导体芯片。
半导体后续工艺中的一个回流焊(Reflow)工艺是指代替起到传输晶片(Wafer)的电信号的作用的金属线,而是将较小的突起的凸块(Bump)形成于晶片上,以减少体积并高速传输信号的工艺。因此,为了形成该凸块,需进行多个工艺。在其中一个工艺中,为了冷却晶片,而进行晶片的分阶段的温度下降,在之前工艺中,将安装有晶片的卡盘与晶片的温度降低至一定范围。
因此,防止对晶片的凸块形成环境产生重要影响的卡盘的温度因晶片的热而过度上升。并且,冷却时晶片的区域的各个温度差为晶片发生翘曲或损伤的原因。
发明内容
发明要解决的技术问题
本发明提供一种基板冷却装置及方法,防止卡盘的温度因基板的热而过度上升。
并且,本发明提供一种能够均匀冷却的基板冷却装置及方法。
而且,本发明提供一种提高冷却效率的基板冷却装置及方法。
本发明要解决的技术课题并非限制于此,未言及的或其它课题通过下面的记载而使普通技术人员明确理解。
用于解决问题的技术方案
本发明提供一种冷却基板的基板冷却装置。本发明的实施例的基板冷却装置包括:卡盘(Chuck),供放置基板;冷却单元,冷却所述卡盘,所述冷却单元包括:散热板,供所述卡盘放置在上面,并散发所述卡盘的热。
在所述散热板的上面形成向下方向凹蚀的沟槽。
对于所述沟槽在俯视时呈放射状。
所述冷却单元还包括:内盖,在底面壁的上面支撑所述散热板并以上下方向移动;冷却部件,提供于所述底面壁的下面,并冷却所述内(Inner)盖。
所述冷却单元还包括:外(Outer)盖,在内部形成容纳所述内盖的空间,其中,所述冷却部件被提供至所述外盖的底面壁。
所述外盖的所述底面壁包括:第一区域及与所述第一区域不同的区域即第二区域,所述冷却单元还包括:弹性部,在所述内盖的所述底面与所述外盖的所述底面壁分隔的状态下,支撑所述第一区域,以使处于比所述第二区域高的位置,在所述第一区域对上下方向而施加弹力;温度测定部,按区域测定所述卡盘的温度;控制部,根据在所述温度测定部测定的与所述卡盘的所述第一区域对应的区域及与所述卡盘的所述第二区域对应的区域的温度,控制所述弹性部,以调整所述内盖的所述底面与所述外盖的所述底面壁分隔状态下的所述第一区域的高度。
所述弹性部包括:气弹簧,支撑所述第一区域;空气调节部件,用于将空气供应至所述气弹簧及排出空气,其中,所述控制部控制所述空气调节部件而调节容纳至所述气弹簧的空气的量,从而,控制所述第一区域的高度。
并且,本发明提供一种利用上述基板冷却装置而冷却基板的基板冷却方法。本发明的实施例的基板冷却方法包括如下步骤:安装基板,在以所述内盖与所述外盖的所述底面壁分隔的方式上升的状态下将基板安装至所述卡盘;测定第一温度,之后,按区域测定所述卡盘的温度;调节高度,之后,根据与在所述温度测定步骤测定的与所述卡盘的所述第一区域对应的区域的温度及与所述卡盘的所述第二区域对应的区域的温度而调节所述第一区域的高度;执行下降,之后,将所述内盖下降直至所述内盖的所述底面壁与所述第一区域及所述第二区域接触;测定第二温度,之后,在所述内盖的底面壁与所述第一区域及所述第二区域接触的状态下,测定各个所述卡盘的区域温度;执行上升,之后,在所述第二温度测定步骤中测定的与所述卡盘的所述第一区域对应的区域及与所述卡盘的所述第二区域对应的区域的温度下降至一定温度的情况下,使所述内盖上升。
所述弹性部包括:气弹簧,支撑所述第一区域;空气调节部件,将空气供应至所述气弹簧及排出空气,其中,在所述高度调节步骤中,所述第一区域的高度通过利用所述空气调节部件而调节容纳至所述气弹簧的空气的量而调节。
在所述高度调节步骤中,所述第一区域的高度随着与所述卡盘的所述第一区域对应的区域及与所述卡盘的所述第二区域对应的区域之间的温度差越高而调节得越高。
所述基板冷却方法在所述第二温度测定步骤及所述上升步骤之间还包括如下步骤:维持高度,控制所述弹性部,以使在所述内盖的所述底面壁与所述外盖的所述底面壁分隔的状态下,所述第一区域的高度与所述第二区域的高度相同。
发明的效果
本发明的实施例的基板冷却装置及方法具有如下效果,防止卡盘的温度因基板的热而过度上升。
并且,本发明的实施例的基板冷却装置及方法具有如下效果,能够均匀冷却基板。
而且,本发明的实施例的基板冷却装置及方法具有如下效果,能够提高冷却效率。
附图说明
图1为显示本发明的一个实施例的基板冷却装置的截面图;
图2为显示图1的散热板的立体图;
图3为显示本发明的另一实施例的基板冷却装置的截面图;
图4为显示本发明的又一实施例的基板冷却装置的截面图;
图5为显示图4的外盖的平面图;
图6为概略性显示图4的弹性部的附图;
图7为显示本发明的一个实施例的基板冷却方法的顺序图;
图8为显示图7的高度调节步骤中的基板冷却装置的状态的侧面图;
图9为显示完成图7的下降步骤的基板冷却装置的状态的侧面图;
图10为显示图7的上升步骤中的基板冷却装置的状态的侧面图;
图11为显示安装一般的基板冷却装置的卡盘的高温的基板之后的温度变化的图表;
图12为显示安装图1的基板冷却装置的卡盘的高温的基板之后的温度变化的图表;
图13为显示安装图3的基板冷却装置的卡盘的高温的基板之后的温度变化的图表。
附图标记说明
10、10a、10b:基板冷却装置 20:基板
1000:卡盘 2000、2000a、2000b:冷却单元
2100:散热板 2101:沟槽
2200:内盖 2300、2300a、2300b:外盖
2301:第一区域 2302:第二区域
2400:冷却部件 2500:弹性部
2510:气弹簧 2520:气压调节部件
2600:温度测定部 2700:控制部
具体实施方式
下面,参照附图对本发明的实施例进行更具体地说明。本发明的实施例能够变形为为各种形式,本发明的范围并非以下面的实施例限定进行解释。本实施例以向本领域平均技术人员更完全说明本发明进行提供。因此,在附图的要素形状进行了夸张,以用于强调更明确的说明而。
本发明的实施例的基板冷却装置被提供为在半导体后续工艺中的一个回流焊(Reflow)工艺中将之前工艺中被加热的晶片冷却至一定温度的装置。
图1为显示本发明的一个实施例的基板冷却装置10的截面图。参照图1,基板冷却装置10冷却基板20。例如,基板20为半导体晶片。基板冷却装置10包括:卡盘(Chuck,1000)及冷却单元2000。
基板20被放置在卡盘1000的上面。冷却单元2000冷却卡盘1000。根据一个实施例,冷却单元2000包括:散热板2100、内(Inner)盖2200及外(Outer)盖2300。
图2为显示图1的散热板2100的立体图。参照图1及图2,散热板2100供在其上面放置有卡盘1000。散热板2100由热导率高的材质提供。例如,散热板2100由铝(Al)材质提供。基板20的热被传输至卡盘1000,在卡盘1000的底面与散热板2100的上面接触的状态下,卡盘1000的热通过散热板2100散发。
在散热板2100的上面形成沟槽(Groove,2101)。沟槽2101由散热板2100的上面向下凹蚀形成。卡盘1000的热通过沟槽2101而更顺畅地散发。根据一个实施例,沟槽2101在俯视时呈放射状提供。与此不同,对于卡盘1000的区域相应的温度分布,因每个各个基板冷却装置10不同,在安装通过试运行而加热的基板20的状态下,按冷却前的各个基板冷却装置10的卡盘1000的区域测定温度,沟槽2101根据按所测定的卡盘1000的区域的温度分布而提供为不同的形状。
再次参照图1,内盖2200在内部具有容纳散热板2100的空间。根据一个实施例,散热板2100被支撑于内盖2200的底面的上面。内盖2200通过驱动器(未图示)而以上下方向移动。根据一个实施例,内盖2200包括相互结合而形成容纳散热板2100的空间的下部内盖2210及上部内盖2220。在下部内盖2210的底面安装散热板2100。上部内盖2220以能够开闭的方式提供。在基板20冷却时,内盖2200的内部空间通过上部内盖2220覆盖下部内盖2210的上部而密封。
外盖2300在内部具有容纳内盖2200的空间。根据一个实施例,外盖2300包括相互结合而形成容纳内盖2200的空间的下部外盖2310及上部外盖2320。上部外盖2320覆盖下部外盖2310的上部,并以能够开闭的方式提供。在基板20冷却时,外盖2300的内部空间通过上部外盖2320覆盖下部外盖2310的上部而密封。
根据本实施例,在基板20被安装在卡盘1000的状态下,在提供至被密封的外盖2300内的密封的内盖2200内在一定时间内进行冷却。
图3为显示本发明的另一实施例的基板冷却装置10a的截面图。参照图3,基板冷却装置10a的冷却单元2000a与图1的基板冷却装置10的冷却单元2000不同,还包括:冷却部件2400。冷却部件2400用于冷却内盖2200。根据一个实施例,冷却部件2400被提供至内盖2200的底面壁的下面。例如,冷却部件2400被提供至外盖2300a的底面。冷却部件2400被提供至外盖2300a的底面的内部,作为供冷却水等的冷却流体流动的冷却流路提供。与此不同,冷却部件2400由产生冷气的各种结构提供。
根据本实施例,在基板20被安装在卡盘1000的状态下,在与插入产生被密封的外盖2300a的冷气的冷却部件2400的底面接触的状态的密封的内盖2200内在一定时间内进行冷却。本实施例的基板冷却装置10a提供冷却部件2400,由此,更能够提高冷却效率。
除了基板冷却装置10a的冷却部件2400提供与否之外的其它结构、构造及功能等也与图1的基板冷却装置10相同或相似。
图4为显示本发明的又一实施例的基板冷却装置10b的截面图。图5为显示图4的外盖2300b的平面图。图6为简要显示图4的弹性部2500的附图。参照图4至图6,基板冷却装置10b的外盖2300b的底面壁与图3的基板冷却装置10a的外盖2300a的底面壁不同,包括:第一区域2301及第二区域2302。外盖2300b的底面壁的第一区域2301及第二区域2302为相互不同的区域。根据一个实施例,第一区域2301是指外盖2300b的底面壁的中央区域,第二区域2302是指外盖2300b的底面壁的边缘区域。与此不同,第一区域2301及第二区域2302通过试运行而在安装各个基板冷却装置10b的加热的基板20的状态下,测定各个冷却之前的卡盘1000的区域的温度,沟槽2101根据所测定的各个卡盘1000的区域的温度分布而以不同的形状及配置提供。在本说明书中,在安装有加热的基板20的状态下,假设与冷却之前的卡盘1000的第一区域2301对应的区域的温度高于与卡盘1000的第二区域对应的区域的温度。第一区域2301能够以上下方向移动的方式提供。
基板冷却装置10b的冷却单元2000b与图3的基板冷却装置10a的冷却单元2000a不同,还包括:弹性部2500、温度测定部2600及控制部2700。
弹性部2500在内盖2200的底面壁与外盖2300b的底面壁分隔的状态下,支撑第一区域2301,以使处于比第二区域2302高的位置。弹性部2500在第一区域2301对上下方向施加弹力。根据一个实施例,弹性部2500包括:气弹簧2510及空气调节部件2520。
气弹簧2510在第一区域2301的下面支撑第一区域2301。多个气弹簧2510以沿着第一区域2301的形状相互分隔排列的方式提供。根据一个实施例,对于第一区域2301提供为环状的情况,气弹簧2510为多个而沿着第一区域2301排列为环状。
空气调节部件2520将空气供应至气弹簧2510及排出空气。根据空气调节部件2520的空气供应及空气排出而调节气弹簧2510的上端的高度。
温度测定部2600按区域测定卡盘1000的温度。根据一个实施例,温度测定部2600按区域测定卡盘1000的上面的温度。与此不同,温度测定部2600根据需要而有选择地测定卡盘1000的底面的温度。温度测定部2600按所测定的卡盘1000的区域将温度传输至控制部2700。根据一个实施例,温度测定部2600测定与卡盘1000的第一区域2301对应的区域的温度及与卡盘1000的第二区域2302对应的区域的温度而传输至控制部2700。
控制部2700根据与在温度测定部2600测定的卡盘1000的第一区域2301对应的区域及与卡盘1000的第二区域2302对应的区域的温度,而控制弹性部2500,以调节内盖2200的底面壁与外盖2300b的底面壁分隔的状态下的第一区域2301的高度。根据一个实施例,控制部2700控制空气调节部件2520,而调节容纳至气弹簧2510的空气的量,从而,控制第一区域2301的高度。
基板冷却装置10b的除此之外的其它的结构、构造及功能等与图3的基板冷却装置10a相同或相似。
下面,对利用图4的基板冷却装置10b而冷却基板的基板冷却方法进行说明。图7为显示本发明的一个实施例的基板冷却方法的顺序图。参照图4及图7,基板冷却方法包括如下步骤:基板安装步骤(S10)、第一温度测定步骤(S20)、高度调节步骤(S30)、下降步骤(S40)、第二温度测定步骤(S50)、高度维持步骤(S60)、上升步骤(S70)及基板运出步骤(S80)。依次执行基板安装步骤(S10)、第一温度测定步骤(S20)、高度调节步骤(S30)、下降步骤(S40)、第二温度测定步骤(S50)、高度维持步骤(S60)、上升步骤(S70)及基板运出步骤(S80)。
在基板安装步骤(S10)中,在以内盖2200与外盖2300b的底面壁分隔的方式而上升的状态下,将基板20安装至卡盘1000。在基板安装步骤(S10)中,安装至卡盘1000的基板20是指在之前工艺中所加热的半导体晶片。
在第一温度测定步骤(S20)中,温度测定部2600按区域测定卡盘1000的温度。温度测定部2600将与所测定的卡盘1000的第一区域2301对应的区域的温度及与卡盘1000的第二区域2302对应的区域的温度传输至控制部2700。
图8为显示图7的高度调节步骤(S30)中的基板冷却装置10b的状态的侧面图。参照图8,在高度调节步骤(S30)中,控制部2700控制驱动器,以根据与在第一温度测定步骤(S20)中测定的卡盘1000的第一区域2301对应的区域的温度及与卡盘1000的第二区域2302对应的区域的温度而调节第一区域2301的高度。根据一个实施例,在高度调节步骤中,控制部2700将第一区域2301的高度以与卡盘1000的第一区域2301对应的区域及与卡盘1000的第二区域2302对应的区域之间的温度差越高而调节得越高。根据一个实施例,在高度调节步骤(S30)中,控制部2700控制空气调节部件2520而调节容纳至气弹簧2510的空气的量,从而,调节第一区域2301的高度。对于与卡盘1000的第一区域2301对应的区域及与卡盘1000的第二区域2302对应的区域之间的温度差相应的第一区域2301的调节的高度通过试运行而设定。
图9为显示完成图7的下降步骤(S40)的基板冷却装置10b的状态的侧面图。参照图9,在下降步骤(S40)中,将内盖2200下降至内盖2200的底面壁与第一区域2301及第二区域2302接触时为止。此时,在高度调节步骤(S30)中调节的第一区域2301的高度被提供得高于第二区域2302的高度,第一区域2301与内盖2200底面壁接触的时间比第二区域2302与内盖2200的底面壁接触的时间长,由此,能够使比第二区域2302的温度高的第一区域2301比第二区域2302更快地冷却。
在第二温度测定步骤(S50)中,温度测定部2600在内盖2200的底面壁与第一区域2301及第二区域2302接触的状态下测定各个卡盘1000的区域的温度。在第二温度测定步骤(S50)中,温度测定部2600将与所测定的卡盘1000的第一区域2301对应的区域的温度及与卡盘1000的第二区域2302对应的区域的温度传输至控制部2700。此时,卡盘1000的温度通过冷却部件2400及散热板2100的热传输而下降,由此,冷却基板20。
在高度维持步骤(S60)中,控制部2700控制弹性部2500,以使在内盖2200的底面壁与外盖2300b的底面壁分隔的状态下,第一区域2301的高度与第二区域2302的高度相同。根据一个实施例,控制部2700在上升步骤(S70)中对于内盖2200上升的情况,控制空气调节部件2520而调节气弹簧2510的高度,以使第一区域2301的高度与第二区域2302的高度相同。因此,对于在上升步骤(S70)中第一区域2301及第二区域2302冷却到了相同的温度时,上升内盖2200的情况,内盖2200的底面的底面同时由第一区域2301及第二区域2302分隔,与第二区域2302对比,因与第一区域2301更持久或短时间地接触,由此,在内盖2200的上升时,能够防止发生与卡盘1000的第一区域2301对应的区域及与卡盘1000的第二区域2302对应的区域之间的温度差。
图10为显示图7的上升步骤(S70)中的基板冷却装置10b的状态的侧面图。参照图10,在上升步骤(S70)中,在与第二温度测定步骤(S50)中测定的卡盘的第一区域2301对应的区域及与卡盘1000的第二区域2302对应的区域的温度下降至一定温度的情况下,使内盖2200上升。
在基板运出步骤(S80)中,由基板冷却装置10b运出基板20,以用于执行下一个步骤的工艺。
下面,对测定安装有普通的基板冷却装置及本发明的实施例的基板冷却装置的高温的基板的状态下的卡盘的温度变化的结果进行说明。
对于所述三种情况,在测定所有温度时所使用的卡盘具有38.1mm的厚度,并具有330.2mm的直径,且由铝材质(AL6061-T6)提供。并且,基板由具有所述三种情况全部相同的大小的玻璃晶片提供。所述三种情况全部基于卡盘的厚度及上面而测定了卡盘的中心部的温度。在各个图表中,x轴是指所测定的时刻(时:分:秒),y轴()是指所测定的温度。
图11为显示安装普通的基板冷却装置的卡盘的高温的基板之后的温度变化的图表。在普通的基板冷却装置上,未提供图2显示所示的散热板2100及图3显示所示的冷却部件2400。参照图11,在145℃的卡盘上安装有255℃的基板之后,确认发生最大约35℃的温度上升。
图12为显示安装有图1的基板冷却装置10的卡盘1000的高温的基板20之后的温度变化的图表。散热板2100由具有28.7mm的厚度,并具有390mm的直径,且由铝材质(AL6061)提供。在散热板2100的上面,如图2的情况所示,提供了放射状的沟槽2101。参照图12,确认了在100℃的卡盘1000安装305℃的基板20之后,发生最大约25℃的温度上升的情况。能够确认即使卡盘1000的最初温度及基板20的最初温度之间的差比图11的情况大,与图11的情况相比,温度上升幅度减小。
图13为显示安装图3的基板冷却装置10a的卡盘1000的高温的基板20之后的温度变化的图表。散热板2100提供为了与图12的情况相同的结构散热板2100。如图3显示所示,在外盖2300a的底面壁提供供冷却流体流动的冷却流路2400。在冷却流路2400持续流入常温的冷却流体而循环之后流出。参照图13,确认在100℃的卡盘1000安装有305℃的基板之后,卡盘1000的温度几乎未上升。
如上所示,本发明的实施例的基板冷却装置10、10a、10b及方法提供散热板2100及/或冷却部件2400,从而,防止卡盘的温度因基板的热而过度上升,并提高冷却效率。并且,本发明的实施例的基板冷却装置10b及方法调节第一区域的高度,从而,均匀冷却基板。
综上具体说明例示本发明。并且,上述内容显示本发明的优选的实施例而说明,本发明在各种其它组合、变更及环境中使用。即在本说明书中公开的发明的概念的范围、上述公开内容与同等的范围及/或本领域技术或知识的范围内能够变更或修正。上述实施例用于说明用于实现本发明的技术思想的最优的状态,能够进行在本发明的具体适用领域及用途中所要求的各种变更。因此,综上发明的具体说明并非通过公开的实施状态限制本发明。并且,权利要求范围应以也包含其它实施形式进行解释。
Claims (11)
1.一种基板冷却装置,涉及一种冷却基板的装置,其特征在于,包括:
卡盘,供放置基板;
冷却单元,用于冷却所述卡盘,
所述冷却单元包括:
散热板,在上面放置所述卡盘,并散发所述卡盘的热。
2.根据权利要求1所述的基板冷却装置,其特征在于,
在所述散热板的上面形成有向下凹蚀的沟槽。
3.根据权利要求2所述的基板冷却装置,其特征在于,
对于所述沟槽,在俯视时呈放射状。
4.根据权利要求1所述的基板冷却装置,其特征在于,
所述冷却单元还包括:
内盖,在底面的上面支撑所述散热板,并以上下方向移动;
冷却部件,提供至所述底面壁的下面,冷却所述内盖。
5.根据权利要求4所述的基板冷却装置,其特征在于,
所述冷却单元还包括:
外盖,在内部形成供容纳所述内盖的空间,
所述冷却部件被提供至所述外盖的底面壁。
6.根据权利要求5所述的基板冷却装置,其特征在于,
所述外盖的所述底面壁还包括:
第一区域;及
第二区域,与所述第一区域不同的区域,
所述冷却单元包括:
弹性部,在所述内盖的所述底面壁与所述外盖的所述底面壁分隔的状态下,支撑所述第一区域,以使处于比所述第二区域高的位置,并在所述第一区域对上下方向施加弹力;
温度测定部,按区域测定所述卡盘的温度;
控制部,根据在所述温度测定部中所测定的与所述卡盘的所述第一区域对应的区域及与所述卡盘的所述第二区域对应的区域的温度,控制所述弹性部,以调节所述内盖的所述底面壁与所述外盖的所述底面壁分隔状态下的所述第一区域的高度。
7.根据权利要求6所述的基板冷却装置,其特征在于,
所述弹性部包括:
气弹簧,支撑所述第一区域;
空气调节部件,将空气供应至所述气弹簧及排出空气,
所述控制部通过控制所述空气调节部件而调节容纳至所述气弹簧的空气的量,从而,控制所述第一区域的高度。
8.一种基板冷却方法,涉及一种利用权利要求6所述的基板冷却装置而冷却基板的方法,其特征在于,
包括如下步骤:
安装基板,在以所述内盖与所述外盖的所述底面壁分隔的方式进行上升的状态下,将基板安装至所述卡盘;
测定第一温度,之后,按区域测定所述卡盘的温度;
调节高度,之后,根据在所述温度测定步骤中测定的与所述卡盘的所述第一区域对应的区域的温度及与所述卡盘的所述第二区域对应的区域的温度而调节所述第一区域的高度;
执行下降,之后,使所述内盖下降直至所述内盖的所述底面壁与所述第一区域及所述第二区域接触;
测定第二温度,之后,在所述内盖的底面壁与所述第一区域及所述第二区域接触的状态下,按所述卡盘的区域测定温度;
执行上升,之后,在所述第二温度测定步骤中测定的与所述卡盘的所述第一区域对应的区域及与所述卡盘的所述第二区域对应的区域的温度下降至一定温度的情况下,上升所述内盖。
9.根据权利要求8所述的基板冷却方法,其特征在于,
所述弹性部包括:
气弹簧,支撑所述第一区域;
空气调节部件,将空气供应至所述气弹簧及排出空气,
在所述高度调节步骤中,所述第一区域的高度利用所述空气调节部件而调节容纳至所述气弹簧的空气的量而调节。
10.根据权利要求8所述的基板冷却方法,其特征在于,
在所述高度调节步骤中,对于所述第一区域的高度,与所述卡盘的所述第一区域对应的区域及与所述卡盘的所述第二区域对应的区域之间温度差越高而调节得更高。
11.根据权利要求10所述的基板冷却方法,其特征在于,
在所述第二温度测定步骤及所述上升步骤之间还包括如下步骤:
维持高度,控制所述弹性部,以使在所述内盖的所述底面壁与所述外盖的所述底面壁分隔的状态下,所述第一区域的高度与所述第二区域的高度相同。
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