CN112309833A - Flash memory unit for depositing IGZO film based on ALD (atomic layer deposition), and preparation method and application thereof - Google Patents
Flash memory unit for depositing IGZO film based on ALD (atomic layer deposition), and preparation method and application thereof Download PDFInfo
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- 230000015654 memory Effects 0.000 title claims abstract description 51
- 238000000231 atomic layer deposition Methods 0.000 title claims abstract description 45
- 238000000151 deposition Methods 0.000 title claims abstract description 22
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 29
- 239000010408 film Substances 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 10
- 239000010703 silicon Substances 0.000 claims abstract description 10
- 230000005641 tunneling Effects 0.000 claims abstract description 8
- 239000010409 thin film Substances 0.000 claims abstract description 7
- 238000007667 floating Methods 0.000 claims abstract description 5
- 238000002955 isolation Methods 0.000 claims abstract description 3
- 239000002243 precursor Substances 0.000 claims description 8
- 239000007800 oxidant agent Substances 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- 230000001590 oxidative effect Effects 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 3
- 238000005137 deposition process Methods 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 12
- 238000011161 development Methods 0.000 abstract description 11
- 239000002120 nanofilm Substances 0.000 abstract description 5
- 238000005530 etching Methods 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 238000012545 processing Methods 0.000 abstract description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 238000007664 blowing Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
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Abstract
The invention discloses a flash memory unit for depositing an IGZO film based on ALD (atomic layer deposition), and a preparation method and application thereof, and belongs to the technical field of semiconductor materials. The preparation method comprises the steps of depositing an isolation layer, a floating gate layer and a tunneling layer on a P-type high-doping wafer substrate, depositing an IGZO thin film layer on the tunneling layer by using an ALD method, etching away redundant IGZO parts, etching a source drain region, and depositing Al as a source drain. The flash memory unit prepared by depositing the IGZO film by the ALD method has lower processing temperature and better performance, and the IGZO film is deposited by the ALD method to replace the traditional silicon channel, so that the performance of the flash memory unit is improved, and the leakage current is reduced. The method adopts the ALD method to deposit the IGZO nano film as the channel layer of the flash memory unit, solves the problem that the silicon channel flash memory unit cannot be used as a flexible substrate material, and lays a foundation for the development of a future flexible memory.
Description
Technical Field
The invention belongs to the technical field of semiconductor materials, and particularly relates to a flash memory unit for depositing an IGZO film based on ALD (atomic layer deposition), and a preparation method and application thereof.
Background
Along with the development of science and technology, the research and development of intelligent wearable equipment attract more and more attention, and the blank of many trades is filled in the aspect of medical treatment and military affairs. In order to meet the development of the trend, the social demands of intelligent products are also changing towards miniaturization, flexibility, low power consumption and the like. Memory is an important component of these smart devices, and flexible nonvolatile Memories (NVMs) have become a powerful aid for future electronic systems, featuring scalability, rollability, and flexibility. To realize a more advanced function flexible electronic system, NVMs devices must be integrated to improve system performance. Amorphous Silicon (a-Si) and Low-Temperature polysilicon (LTPS) are relatively mature technologies in the market at present, and cannot meet the development of flexible memories. Because the flexible organic substrate can only bear the processing temperature below 350 ℃, monocrystalline silicon and polycrystalline silicon cannot grow on the flexible organic substrate, and the traditional amorphous silicon cannot meet the requirements of high-performance memory devices due to too low mobility and poor performance. Therefore, it is the most effective way to solve the development limitation of smart devices to find a new semiconductor with high mobility and stable performance to replace the traditional silicon.
Indium Gallium Zinc Oxide (IGZO) was a flexible transparent Thin Film Transistor (TFT) first proposed in 2004 by professor HideoHosono of the university of tokyo industries. IGZO was first used as a channel material in a new generation of high performance Thin Film Transistors (TFTs), thereby improving the resolution of the display panel and making a large screen OLED television possible. IGZO, as a new semiconductor material, has higher electron mobility than amorphous silicon (α -Si), and can replace the original silicon channel material because IGZO has much higher electron mobility than amorphous silicon, and IGZO has the largest on-off ratio and smaller leakage current, which makes the power consumption lower when the device unit does not work, which is very important for mobile devices. However, in the development of flash memory units, the application of the IGZO film is rarely reported, mainly in the IGZO film deposition process, a magnetron sputtering process is mostly adopted, and in the process, plasma can damage the surface of the IGZO film, so that the storage performance of the flash memory unit is influenced, and the flash memory unit is further influenced to be applied to a flexible substrate material.
In summary, it is important to develop a flash memory cell deposited with an IGZO film and apply the flash memory cell to a flexible non-volatile memory base material.
Disclosure of Invention
Aiming at the defects that the flexible substrate material in the prior art is low in temperature bearing and plasma can cause loss to an IGZO film, the invention provides a flash memory unit for depositing the IGZO film based on ALD (atomic layer deposition), a preparation method and application thereof.
The invention is realized by the following technical scheme:
a preparation method of a flash memory unit based on ALD deposition of an IGZO film comprises the steps of depositing an isolation layer, a floating gate layer and a tunneling layer on a P-type high-doping wafer substrate, depositing an IGZO thin film layer on the tunneling layer by the ALD method, etching away redundant IGZO parts, etching a source drain region, and depositing Al as a source drain. Furthermore, the temperature in the ALD method is 190-210 ℃, and the vacuum degree is 1.5 multiplied by 10-5pa or less.
Further, In the atomic layer deposition method, the precursor reacts with an oxidant, the mass ratio of Ga, In and Zn In the precursor is 1:1:1, and the oxidant is H2O2。
Furthermore, the thickness of the IGZO film is 10-20 nm.
Furthermore, the P-type highly doped wafer is a heavily doped P-type silicon wafer with the thickness of 500 um; the isolating layer is thermal oxidation SiO2A layer having a thickness of 5 nm; the floating gate layer is Si3N4A layer having a thickness of 7 nm; the tunneling layer is Al2O3And the thickness is 5 nm.
Further, the SiO2Layer and Si3N4The deposition method of the layer is a low-pressure chemical vapor deposition method; the Al is2O3Method for depositing a layerFor the thermal ALD process, the temperature is 200 ℃ under vacuum.
Furthermore, the redundant IGZO part is etched by adopting a positive photoresist method, a source drain region is etched by using Negative Photoresist (NPR), and Al is deposited by utilizing magnetron sputtering and serves as a source drain.
The flash memory unit based on the ALD deposited IGZO film is prepared by the method.
In the invention, the prepared flash memory unit based on the ALD deposited IGZO film is applied to a flexible nonvolatile memory.
The invention utilizes the Thermal Atom Layer Deposition (ALD) method to deposit the IGZO nano film as the channel Layer of the flash memory unit, and because the ALD device only deposits the film with one Atom thickness in each period, the film has more uniform surface characteristics and stable performance. The ALD IGZO is used for replacing the traditional silicon, the performance of a flash memory unit is improved, the leakage current is reduced, the bottleneck situation caused by the extremely high growth and treatment temperature of monocrystalline silicon is broken, the original electronic chip based on the hard silicon bottom plate is replaced, and the ALD IGZO is used for flexible electronics, sensors and wearable equipment and lays a foundation for the development of future technologies.
Advantageous effects
(1) According to the invention, the IGZO nano film is deposited by adopting an ALD method to serve as the channel layer of the flash memory unit, so that the problem that the silicon channel flash memory unit cannot be used for a flexible substrate material is solved, and a foundation is laid for the development of a future flexible memory;
(2) the flash memory unit prepared by depositing the IGZO film by the ALD method has lower processing temperature and better performance, provides a development direction for the next flash memory unit optimization, determines the storage characteristics of the ALD IGZO flash memory unit, and verifies the development possibility of the ALD IGZO flash memory unit.
Drawings
FIG. 1 is a pulse flow diagram for deposition of various components of an IGZO thin film;
FIG. 2 is a block diagram of a flash memory cell based on ALD deposited IGZO films;
FIG. 3 shows the programming and erasing characteristics and the memory window size of an ALD IGZO flash memory cell.
Detailed Description
For a further understanding of the invention, reference will now be made to the preferred embodiments of the invention by way of example, and it is to be understood that the description is intended to further illustrate the features and advantages of the invention and not to limit the scope of the claims.
Example 1
(1) Preparing a heavily doped P-type silicon wafer of 500um as a substrate, growing a layer of thermal oxidized SiO of 5nm on the substrate by thermal oxidation of CVD2Layer, then depositing 7nm thick Si by Low Pressure Chemical Vapor Deposition (LPCVD) and thermal ALD, respectively3N4Layer and 5nm thick Al2O3Layer (temperature 200 ℃ under vacuum);
(2) then, an IGZO nano-film with the thickness of 15nm is deposited by adopting an ALD method to serve as a communication layer of the flash memory unit: in a vacuum chamber at 200 deg.C (vacuum degree of 1.5 × 10)-5pa) to obtain a 1:1:1 IGZO nano-film 15nm thick by reacting the precursor with the oxidant, fig. 1 is a pulse flow when depositing various components of the IGZO film; blowing precursor into the reaction chamber by short pulses, covering the surface of the reaction layer with precursor uniformly, blowing off excess precursor by blowing inert gas for 10 seconds, and then blowing oxidizing agent (H)2O2) And carrying out oxidation reaction with the oxide layer, and removing redundant reactants by using inert gas to obtain a uniform and stable oxide layer.
In order to realize a plurality of separated flash memory units on the whole ICZO thin film layer, redundant IGZO parts are etched with the help of Positive Photoresist (PPR), a source drain region is etched by Negative Photoresist (NPR), and Al is deposited by magnetron sputtering to be used as a source drain. The structure of a flash memory cell based on ALD deposited IGZO film is shown in fig. 2.
FIG. 3 shows the states of writing and erasing of a flash memory celld-VgIn the graph, we perform write and erase operations by applying a pulse voltage of 10ms duration of 18V to the gate. During writing, a positive pulse voltage is applied to the gate, and electrons affected by the voltage are driven by the Si through the tunnel oxide layer3N4Charge Trapping Layer (CTL) trapping. When the channel is opened, these electrons in the CTL can create a positive charge in the channel, canceling some of the electrons in the channel, resulting in a positive shift in the threshold voltage (Vth); during the erasing operation, the grid is connected with the negative pulse voltage and the negative pulse voltage, the trapped electrons return to the channel to complete the erasing process, when the channel is opened, the trapped charges of the cancellation channel in the CTL layer disappear, and the Vth moves towards the negative direction and approaches to the original state; under appropriate conditions, the larger memory window can effectively isolate write operations and erase operations, improving the reliability of the flash memory device. Therefore, an important parameter for computing flash memory is the width of the memory window.
As can be seen from FIG. 3, the memory window of the IGZO flash memory cell can reach 0.5V, and under the condition of increasing the pulse voltage properly, a larger memory window can be obtained, and a more optimized result can be obtained. Table 1 shows characteristic parameters of the ALD IGZO MOS transistor, and as a material basis of the flash memory cell, a channel layer material is required to show excellent storage characteristics, and simultaneously, electrical characteristics are required to meet the characteristics of low power consumption and high mobility of an intelligent product. As can be seen from Table 1, the threshold voltage of the ALD IGZO transistor is 0.54V and the electron mobility is 24.64cm2Vs, subthreshold swing amplitude is lower by 0.28V/decade, ION/OFF(switching Current) is high at 3.1X 104And A, the requirements of future intelligent products are met. Therefore, a flash memory device based on the ALD IGZO channel will likely achieve a larger memory window and better prospects for development.
TABLE 1 characterization parameters for ALD IGZO MOS transistors
Claims (9)
1.A preparation method of a flash memory unit based on an ALD (atomic layer deposition) deposition IGZO film is characterized in that an isolation layer, a floating gate layer and a tunneling layer are deposited on a P-type high-doping wafer substrate, an IGZO thin film layer is deposited on the tunneling layer by the ALD method, then redundant IGZO parts are etched, a source drain region is etched, and Al is deposited to be used as a source drain.
2. The method according to claim 1, wherein the ALD process is carried out at a temperature of 190-210 ℃ under a vacuum of 1.5X 10-5pa or less.
3. The method according to claim 1, wherein the atomic layer deposition method comprises reacting a precursor with an oxidant, wherein the mass ratio of Ga, In and Zn In the precursor is 1:1:1, and the oxidant is H2O2。
4. The preparation method according to claim 1, wherein the thickness of the IGZO film is 10-20 nm.
5. The preparation method of claim 1, wherein the P-type highly doped wafer is a heavily doped P-type silicon wafer with a thickness of 500 um; the isolating layer is thermal oxidation SiO2A layer having a thickness of 5 nm; the floating gate layer is Si3N4A layer having a thickness of 7 nm; the tunneling layer is Al2O3And the thickness is 5 nm.
6. The method of claim 5, wherein the SiO is2Layer and Si3N4The deposition method of the layer is a low-pressure chemical vapor deposition method; the Al is2O3The deposition process of the layer is a thermal ALD process with a temperature of 200 ℃ under vacuum.
7. The preparation method of claim 1, wherein the excess IGZO is etched by a positive photoresist method, a source and drain region is etched by a Negative Photoresist (NPR), and Al is deposited by magnetron sputtering as a source and drain.
8. Flash memory cell based on ALD deposited IGZO films prepared by the preparation method according to any one of claims 1 to 7.
9. Use of an ALD-deposited IGZO film-based flash memory cell prepared by the preparation method according to any one of claims 1 to 7 in a flexible non-volatile memory.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115274420A (en) * | 2022-08-15 | 2022-11-01 | 福州大学 | Preparation method of flexible substrate based ALD (atomic layer deposition) hafnium oxide thin film |
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