CN112304703B - Wafer surface impurity sampling device - Google Patents
Wafer surface impurity sampling device Download PDFInfo
- Publication number
- CN112304703B CN112304703B CN202011187557.2A CN202011187557A CN112304703B CN 112304703 B CN112304703 B CN 112304703B CN 202011187557 A CN202011187557 A CN 202011187557A CN 112304703 B CN112304703 B CN 112304703B
- Authority
- CN
- China
- Prior art keywords
- nozzle
- sampling
- wafer
- scanning
- gas chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/02—Devices for withdrawing samples
- G01N1/10—Devices for withdrawing samples in the liquid or fluent state
- G01N1/14—Suction devices, e.g. pumps; Ejector devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
Abstract
The embodiment of the application discloses wafer surface impurity sampling device, the device includes: a sampling nozzle and a rotary table; the rotary table is used for bearing a wafer and driving the wafer to rotate; the surface of the rotating platform, which is used for bearing the wafer, is a bearing surface; the sampling nozzle is arranged on the bearing surface and opposite to the rotating table, the bottom surface of the sampling nozzle facing the rotating table is in a strip shape, and the long edge of the strip shape extends along a first direction; the first direction is a direction from the center of the rotating table to the edge of the rotating table; the sampling nozzle comprises an outer nozzle frame and an inner scanning nozzle which are coaxially arranged; the internal scanning nozzle is used for spraying scanning liquid onto the wafer through the bottom surface and recovering the scanning liquid on the wafer; and a gas chamber is formed between the outer nozzle frame and the inner scanning nozzle to block the scanning liquid in the sampling nozzle.
Description
Technical Field
The embodiment of the application relates to the field of semiconductor manufacturing, in particular to a wafer surface impurity sampling device.
Background
At present, in the production process of semiconductor chips, impurity elements are important factors affecting the yield of semiconductor chips. Even minute amounts of impurity elements may reduce the yield of semiconductor chips, for example, contamination with alkali metal impurities and alkaline earth metal impurities may lead to a reduction in the breakdown voltage of the chips; the transition metal impurities and heavy metal impurities can shorten the service life of the chip or increase the dark current of the chip during operation. The content of the impurity element has a great influence on both the performance of the semiconductor chip and the product life, and therefore, the extraction and measurement of the impurity element are of great significance to the production of the semiconductor chip.
However, the current extraction and measurement schemes of impurity elements have the problem of low efficiency.
Disclosure of Invention
In view of the above, the embodiments of the present application provide a device for sampling impurities on a wafer surface to solve at least one problem in the prior art.
In order to achieve the above purpose, the technical solution of the embodiment of the present application is implemented as follows:
the embodiment of the application provides a wafer surface impurity sampling device, the device includes: a sampling nozzle and a rotary table; wherein the content of the first and second substances,
the rotating platform is used for bearing the wafer and driving the wafer to rotate; the surface of the rotating platform, which is used for bearing the wafer, is a bearing surface;
the sampling nozzle is arranged on the bearing surface and opposite to the rotating table, the bottom surface of the sampling nozzle facing the rotating table is in a strip shape, and the long edge of the strip shape extends along a first direction; the first direction is a direction from the center of the rotating table to the edge of the rotating table;
the sampling nozzle comprises an outer nozzle frame and an inner scanning nozzle which are coaxially arranged;
the internal scanning nozzle is used for spraying scanning liquid onto the wafer through the bottom surface and recovering the scanning liquid on the wafer;
and a gas chamber is formed between the outer nozzle frame and the inner scanning nozzle to block the scanning liquid in the sampling nozzle.
In an alternative embodiment, a ratio of a length of the sampling nozzle in a first direction to a length of the sampling nozzle in a second direction, which is a direction perpendicular to the first direction on the bottom surface, is equal to or greater than 8.
In an alternative embodiment, the length of the sampling nozzle in the first direction is between 4cm and 6 cm;
the length of the sampling nozzle in a second direction is 0.3cm to 0.6cm, the second direction being a direction perpendicular to the first direction on the bottom surface.
In an alternative embodiment, the gas chamber is divided into a front gas chamber and a rear gas chamber which are not communicated with each other along a second direction perpendicular to the first direction.
In an alternative embodiment, the apparatus further comprises: a front end gas pipeline, a rear end gas pipeline and a scanning liquid pipeline; wherein the content of the first and second substances,
the front end gas pipeline is connected with the front end gas chamber, and the rear end gas pipeline is connected with the rear end gas chamber;
the scanning liquid pipeline is connected with the internal scanning nozzle.
In an alternative embodiment, the apparatus further comprises: a first pressing assembly and a second pressing assembly; wherein the content of the first and second substances,
the first pressurizing assembly is connected with the front-end gas chamber and is used for independently controlling the pressure of the front-end gas chamber;
the second pressurizing assembly is connected with the rear end gas chamber and is used for independently controlling the pressure of the rear end gas chamber.
In an alternative embodiment, the distance between the lower edge of the inner scanning nozzle and the rotary stage is smaller than the distance between the lower edge of the outer nozzle holder and the rotary stage.
In an alternative embodiment, the distance between the lower edge of the outer nozzle holder and the rotary table is adjustable.
In an alternative embodiment, the apparatus further comprises: adjusting the screw rod;
the adjusting screw rod is movably connected with the internal scanning nozzle and fixedly connected with the external nozzle frame;
the adjusting screw is used for adjusting the distance between the external nozzle frame and the rotating platform.
In an alternative embodiment, the adjustment screw comprises a first adjustment screw and a second adjustment screw; the first adjusting screw and the second adjusting screw are used for jointly adjusting the distance between the external nozzle rack and the rotating platform;
the first adjusting screw rod is arranged on one side, close to the center of the rotating table, of the sampling nozzle, and the second adjusting screw rod is arranged on one side, close to the edge of the rotating table, of the sampling nozzle.
In an alternative embodiment, the inner scanning nozzle comprises an arcuate portion and a land portion; the lower edge of the arched part is connected with the upper edge of the ridge part;
the side wall of the ridge portion is inclined in a direction approaching the axial center of the sampling nozzle from the upper edge of the ridge portion to the lower edge of the ridge portion.
The embodiment of the application discloses wafer surface impurity sampling device, the device includes: a sampling nozzle and a rotary table; the rotary table is used for bearing a wafer and driving the wafer to rotate; the surface of the rotating platform, which is used for bearing the wafer, is a bearing surface; the sampling nozzle is arranged on the bearing surface and opposite to the rotating table, the bottom surface of the sampling nozzle facing the rotating table is in a strip shape, and the long edge of the strip shape extends along a first direction; the first direction is a direction from the center of the rotating table to the edge of the rotating table; the sampling nozzle comprises an outer nozzle frame and an inner scanning nozzle which are coaxially arranged; the internal scanning nozzle is used for spraying scanning liquid onto the wafer through the bottom surface and recovering the scanning liquid on the wafer; and a gas chamber is formed between the outer nozzle frame and the inner scanning nozzle to block the scanning liquid in the sampling nozzle. The relative bottom surface of sample nozzle and revolving stage in the embodiment of this application is rectangular shape, and this rectangular shape extends along the first direction (the first direction is the revolving stage center to the direction at revolving stage edge), so, drives at the revolving stage the wafer is rotatory, and when the sample nozzle removed from the revolving stage center to the direction at revolving stage edge, the scanning range of sample nozzle along the first direction is bigger, that is to say, the sample nozzle can scan more wafer areas to the scanning rate and the scanning efficiency of wafer surface impurity sampling device have been improved, the sampling efficiency of every wafer has also been promoted greatly. And further, because outside nozzle yoke and inside scanning nozzle coaxial setting, and constitute gas cavity between outside nozzle yoke and the inside scanning nozzle, under gas cavity's cooperation, can be in the scanning liquid separation that inside scanning nozzle sprayed is in the sample nozzle to scanning liquid's rate of recovery has been improved.
Drawings
FIG. 1a is a schematic diagram of a manual VPD;
FIG. 1b is a schematic diagram of an automated VPD;
FIG. 1c is a schematic view of the scanning flow in manual VPD and automatic VPD;
FIG. 1d is a schematic diagram of the configuration of nozzles in a manual VPD and an automatic VPD;
FIG. 2 is a cross-sectional view of an apparatus for sampling impurities on a surface of a wafer according to an embodiment of the present disclosure;
fig. 3 is a front view of a wafer surface impurity sampling apparatus provided in an embodiment of the present application;
FIG. 4 is a schematic diagram of a wafer surface impurity sampling apparatus according to an embodiment of the present disclosure;
FIG. 5 is a force analysis diagram of an internal scanning nozzle provided in an embodiment of the present application;
FIG. 6 is a schematic illustration of contact angles of a hydrophilic surface and a hydrophobic surface provided in an example of the present application;
fig. 7 is a schematic adjustment diagram of an external nozzle holder according to an embodiment of the present disclosure.
Detailed Description
Exemplary embodiments disclosed in the present application will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present application are shown in the drawings, it should be understood that the present application may be embodied in various forms and should not be limited to the specific embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the present application. It will be apparent, however, to one skilled in the art, that the present application may be practiced without one or more of these specific details. In other instances, well-known features have not been described in order to avoid obscuring the present application; that is, not all features of an actual embodiment are described herein, and well-known functions and structures are not described in detail.
In the drawings, the size of layers, regions, elements, and relative sizes may be exaggerated for clarity. Like reference numerals refer to like elements throughout.
It will be understood that when an element or layer is referred to as being "on" … …, "adjacent to … …," "connected to" or "coupled to" other elements or layers, it can be directly on, adjacent to, connected to or coupled to the other elements or layers or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on … …," "directly adjacent to … …," "directly connected to" or "directly coupled to" other elements or layers, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present application. And the discussion of a second element, component, region, layer or section does not imply that a first element, component, region, layer or section is necessarily present in the application.
Spatial relationship terms such as "under … …", "under … …", "below", "under … …", "above … …", "above", and the like, may be used herein for ease of description to describe the relationship of one element or feature to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, then elements or features described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary terms "below … …" and "below … …" can encompass both an orientation of up and down. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatial descriptors used herein interpreted accordingly.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.
So that the manner in which the features and elements of the present embodiments can be understood in detail, a more particular description of the embodiments, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings.
In order to measure trace impurity elements, the wafer surface is pretreated by using chemical Vapor decomposition (VPD), and then inductively coupled plasma-mass spectrometry (ICP-MS) is performed. As shown in fig. 1a and 1b, at present, a manual VPD or an automatic VPD is often used for pretreatment, and after the manual VPD, i.e., an operator manually moves a nozzle to sweep the nozzle across a whole wafer, a scanning liquid in the nozzle is transferred to an ICP-MS for impurity element content analysis and test. However, either manual VPD or automatic VPD has the following problems:
1) impurities are inevitably introduced in the manual VPD process, and the test effect is influenced. In addition, the manual VPD is only suitable for hydrophobic wafers, otherwise the scanning liquid cannot be collected.
2) As shown in fig. 1c, the nozzles used in both the manual VPD and the automatic VPD are small nozzles having a circular shape, and the scanning rate is low, resulting in low scanning efficiency.
3) As shown in fig. 1d, the pressure in the gas chamber of the nozzle is uniform, and when the nozzle moves, if the pressure in the gas chamber is too low, liquid leakage at the rear end of the nozzle may occur due to the influence of tension on the liquid droplets, and if the pressure in the gas chamber is increased, air may be introduced at the front end of the nozzle.
Therefore, the following technical scheme of the embodiment of the application is provided.
The embodiment of the present application provides a wafer surface impurity sampling device, fig. 2 is a cross-sectional view of the wafer surface impurity sampling device provided by the embodiment of the present application, as shown in fig. 2, the wafer surface impurity sampling device includes:
a sampling nozzle 210 and a rotary stage 220; wherein the content of the first and second substances,
the rotating platform 220 is used for bearing a wafer and driving the wafer to rotate; the surface of the rotating platform 220 for supporting the wafer is a supporting surface;
the sampling nozzle 210 is arranged on the bearing surface opposite to the rotating platform 220, the bottom surface of the sampling nozzle 210 facing the rotating platform 220 is in a strip shape, and the long edge of the strip shape extends along a first direction; the first direction is a direction from the center of the rotation stage 220 to the edge of the rotation stage 220 (the first direction as shown in fig. 4);
the sampling nozzle 210 includes an outer nozzle holder 211 and an inner scanning nozzle 212 coaxially disposed;
the internal scanning nozzle 212 is used for spraying scanning liquid onto the wafer through the bottom surface (e.g., linear bottom surface) and recovering the scanning liquid on the wafer;
a gas chamber (e.g., including a front gas chamber 2131 and a rear gas chamber 2132 as shown in fig. 2) is formed between the outer nozzle holder 211 and the inner scanning nozzle 212 to block the scanning fluid in the sampling nozzle 210, specifically in the gas chamber.
Set up the sample nozzle into rectangular shape in the embodiment of this application, and this rectangular shape extends along a direction, has improved the scanning scope of sample nozzle along first direction, makes and drives at the revolving stage when the rotatory week of wafer, more wafer areas can be scanned to the sample nozzle to improve wafer surface impurity sampling device's scanning rate and scanning efficiency, so, promoted the sampling efficiency of every wafer greatly.
Here, the impurities on the surface of the wafer are collected in a scanning Solution (Scan Solution), the scanning Solution collected after the surface of the wafer is scanned is transferred to an ICP-MS for an impurity content analysis test, and the impurity content on the surface of the wafer is calculated. Wherein the impurities may be metallic impurities.
In the present embodiment, the sampling nozzle 210 moves between the center of the turntable 220 and the edge of the turntable 220 to scan and sample the entire wafer. The axial cross-section of the outer nozzle holder 211 is perpendicular to the bearing surface of the rotary stage 220, and the axial cross-section of the inner scanning nozzle 212 is perpendicular to the bearing surface of the rotary stage 220.
In the embodiment of the present application, a ratio of a length of the sampling nozzle 210 in a first direction to a length of the sampling nozzle 210 in a second direction, which is a direction perpendicular to the first direction on the bottom surface (the second direction as shown in fig. 4), is equal to or greater than 8.
In some embodiments of the present application, the wafer may be placed in the center of the rotating table 220, and the first direction is, for example, a radial direction of the wafer, and the second direction is, for example, a tangential direction perpendicular to the radial direction of the wafer.
In the present embodiment, the length of the sampling nozzle 210 along the first direction is 4cm to 6 cm; the length of the sampling nozzle 210 in a second direction, which is a direction perpendicular to the first direction on the bottom surface, is 0.3cm to 0.6 cm. Because the length of the sampling nozzle 210 in the first direction is far greater than the length of the sampling nozzle 210 in the second direction, the scanning range of the sampling nozzle in the first direction (the direction from the center of the rotary table to the edge of the rotary table) is greatly increased, and the scanning speed and the scanning efficiency of the wafer surface impurity sampling device are improved.
In the embodiment of the present application, the shape of the sampling nozzle is a three-dimensional shape with a long strip-shaped bottom surface and extending along the first direction. In practical application, the shape of the sampling nozzle can be a cuboid or other three-dimensional shape with a long strip-shaped bottom surface and extending along the first direction.
For example, when the length of the sampling nozzle 210 along the first direction is 5cm, the circular scanning contact area is increased by 5 times and the circular scanning efficiency is increased by 400% compared to the nozzle having a diameter of 1cm used in the prior art, and the throughput (through put) of the wafer surface impurity sampling device is also increased from 42min/pcs to 9min/pcs (for a wafer having a diameter of 300 mm).
In the embodiment of the present application, the orthogonal projection shape of the internal scanning nozzle 212 on the rotating stage 220 is a long bar, and the long side of the long bar extends in the first direction. The ratio of the length of the inner scanning nozzle 212 in the first direction to the length of the inner scanning nozzle 212 in the second direction is equal to or greater than 8. The length of the inner scanning nozzle 212 in the first direction is 4cm to 6 cm; the length of the inner scanning nozzle 212 in the second direction is 0.3cm to 0.6 cm. Because the length of the inner scanning nozzle 212 in the first direction is far greater than the length of the inner scanning nozzle 212 in the second direction, the scanning range of the inner scanning nozzle 212 in the first direction (the direction from the center of the rotary table to the edge of the rotary table) is greatly increased, and thus the scanning speed and the scanning efficiency of the wafer surface impurity sampling device are improved.
In the embodiment of the present application, as shown in fig. 2, the gas chamber is divided into a front end gas chamber 2131 and a rear end gas chamber 2132 which are not communicated with each other in a second direction perpendicular to the first direction.
Fig. 3 is a front view of an apparatus for sampling impurities on a surface of a wafer according to an embodiment of the present disclosure, as shown in fig. 2 and 3, the apparatus further includes: a front end gas line 214, a back end gas line 215, and a scanning liquid line; wherein the front gas duct 214 is connected to the front gas chamber 2131, and the rear gas duct 215 is connected to the rear gas chamber 2132; the scanning liquid conduit is connected to the internal scanning nozzle 212. Here, the front end gas pipe 214 is used to supply an inert gas (e.g., nitrogen) to the front end gas chamber 2131, and the rear end gas pipe 215 is used to supply an inert gas to the rear end gas chamber 2132.
In the embodiment of the present application, the scanning liquid pipeline includes a scanning liquid input pipeline 216 and a scanning liquid output pipeline 217; wherein, the scanning liquid input pipeline 216 is used for conveying the scanning liquid to the internal scanning nozzle 212; the scanning liquid output pipeline 217 is used for recovering the scanning liquid on the wafer.
In some embodiments, the apparatus further comprises: and a suction assembly (not shown) connected to the scanning liquid output pipe 217, for recovering and discharging the scanning liquid by suction. In practical applications, the suction component may be a vacuum pump, a flow rate pump, a mechanical pump, a molecular pump, or an exhaust fan, which can generate suction.
In an embodiment of the present application, the apparatus further includes: a first pressing assembly (not shown) and a second pressing assembly (not shown); wherein the first pressurizing assembly is connected to the front end gas chamber 2131, and the first pressurizing assembly is configured to independently control the pressure of the front end gas chamber 2131; the second pressurizing assembly is connected to the back end gas chamber 2132, and the second pressurizing assembly is used for independently controlling the pressure of the back end gas chamber 2132. The pressure of front end gas chamber 2131 and the pressure of rear end gas chamber 2132 can be controlled alone in this application embodiment, and the driving force of front end and rear end is suitable when guaranteeing the sample nozzle and remove, and when guaranteeing the sample nozzle and remove, the condition that the front end was admitted air, the rear end weeping can not appear in inside scanning nozzle.
Fig. 4 is a schematic view of an apparatus for sampling impurities on a wafer surface according to an embodiment of the present disclosure, and as shown in fig. 4, a top view of the sampling nozzle 210 is a long strip shape, and a long side of the long strip shape extends along a first direction; the first direction is a direction from the center of the rotary table to an edge of the rotary table. The second direction is a direction perpendicular to the first direction on the surface of the wafer. The first and second directions are shown by dashed lines in fig. 4.
FIG. 5 is a force analysis diagram of the internal scanning nozzle provided in the embodiment of the present application, as shown in FIG. 5, when the sampling nozzle moves (F)pIs the travel force of the sampling nozzle), the force analysis of the droplets at the front end and the rear end of the internal scanning nozzle is as follows:
a rear end: f1+Ff＝P1And x S. Wherein, F1Is the droplet spreading force; ffIs the advancing resistance of the sampling nozzle; p1Is the pressure of the back end gas chamber; and S is the contact area of the internal scanning nozzle and the gas. From this, the pressure of the rear gas chamber can be determined
Front end: f' for the treatment of diabetes1-Ff＝P2And x S. Wherein, F ″, is1Is the droplet spreading force; ffIs the advancing resistance of the sampling nozzle; p2Is the pressure of the front end gas chamber; and S is the contact area of the internal scanning nozzle and the gas. In addition, F1`＝F1. From this, the pressure of the front gas chamber can be determined
It should be noted that, the traveling force of the sampling nozzle is a force pushing the sampling nozzle to move; the resistance to travel of the sampling nozzle is the resistance to the movement of the sampling nozzle.
From the pressure of the rear end gas chamber and the pressure of the front end gas chamber, it can be known that: p1>P2The utility model discloses a scanning nozzle, including sampling nozzle, back end gas chamber, front end gas chamber, back end gas chamber needs great pressure, and the back end gas chamber needs less pressure to prevent when sampling nozzle removes, the condition that the front end was admitted air, the rear end weeping appears in inside scanning nozzle, thereby can collect more scanning liquids in the inside scanning nozzle during the scanning, reduce the weeping, also can have better liquid drop gathering ability to hydrophilic wafer simultaneously.
Since the pressure of the front-end gas chamber 2131 and the pressure of the back-end gas chamber 2132 can be independently controlled in this embodiment, the wafer surface impurity sampling device provided in this embodiment of the present application can also extract impurities from a hydrophilic wafer, in other words, by using the wafer surface impurity sampling device in this embodiment of the present application, it is not necessary to pre-process the wafer to form a hydrophobic wafer surface, and the wafer can be directly subjected to impurity sampling. Therefore, the process steps are reduced, and the efficiency of sampling the wafer impurities is improved.
Fig. 6 is a schematic diagram of contact angles of a hydrophilic surface and a hydrophobic surface provided in an embodiment of the present application, and as shown in fig. 6, the contact angle of the hydrophilic surface is smaller than that of the hydrophobic surface, so that a droplet of the hydrophilic surface requires a larger pressure to be controlled. Based on this, the pressure of the front-end gas chamber and the pressure of the back-end gas chamber often need to be adjusted more when sampling impurities from hydrophilic wafers (as compared to hydrophobic wafers).
The embodiment of the application can control the pressure of front end gas chamber and the pressure of rear end gas chamber alone, thereby can realize the accurate regulation of the pressure of inside scanning nozzle front end and rear end, overcome the resistance difference that advances of sampling nozzle, and when carrying out impurity sampling to the hydrophilicity wafer, can also adjust and optimize rear end gas chamber pressure and front end gas chamber pressure pertinence, with the surface characteristic who adapts to the hydrophilicity wafer, ensure the collection of the scanning liquid of hydrophilicity wafer, reduce the weeping.
Here, the first pressurizing assembly may be connected to the front end gas pipe 214 or integrally provided with the front end gas pipe 214; the second pressurizing assembly may be connected to the back end gas pipe 215 or may be integrally provided with the back end gas pipe 215. In practical applications, each of the first pressurizing assembly and the second pressurizing assembly includes an air inlet end and an air outlet end, the air inlet end is connected to the front end gas pipeline 214 and the rear end gas pipeline 215, and the air outlet end is connected to the front end gas chamber 2131 and the rear end gas chamber 2132. And pressure valves for conducting or isolating the air inlet end and the air outlet end are respectively arranged in the air inlet end and the air outlet end. The pressure valve may control the pressure of the gas by opening and closing the gas flow path and/or adjusting the cross-sectional flow area of the gas flow path to control the pressure of the gas chamber. Wherein, the pressure valve can be a manual valve and can also be an automatic valve. The automatic valve may comprise an electrically controlled valve or a solenoid valve.
In the embodiment of the present application, as shown in fig. 2, a distance between the lower edge of the inner scanning nozzle 212 and the rotating stage 220 is smaller than a distance between the lower edge of the outer nozzle holder 211 and the rotating stage 220. In practical applications, the lower edge of the inner scanning nozzle 212 may directly contact the carrying surface of the turntable 220 to better spray the scanning liquid onto the wafer and recover the scanning liquid. Since the distance between the lower edge of the inner scanning nozzle 212 and the rotating stage 220 is smaller than the distance between the lower edge of the outer nozzle holder 211 and the rotating stage 220, the inner scanning nozzle 212 exposed from the lower surface of the outer nozzle holder 211 can be seen in the front view shown in fig. 3.
In the embodiment of the present application, the distance between the lower edge of the outer nozzle holder 211 and the rotating table 220 is adjustable. In practical applications, the distance between the lower edge of the outer nozzle holder 211 and the wafer on the turntable is adjustable.
In the embodiment of the present application, as shown in fig. 2 to 5, the apparatus further includes: an adjusting screw 217; the adjusting screw 217 is arranged on the sampling nozzle 210; the adjusting screw 217 is movably connected with the internal scanning nozzle 212 and fixedly connected with the external nozzle holder 211; the adjusting screw 217 is used to adjust the distance between the outer nozzle holder 211 and the rotating table 220. In practical applications, the adjusting screw 217 is used to adjust the distance between the outer nozzle holder 211 and the wafer on the rotary stage.
In the present embodiment, the adjustment screw 217 includes a first adjustment screw 2171 and a second adjustment screw 2172; the first and second adjusting screws 2171 and 2172 are used to collectively adjust the distance between the external nozzle holder 211 and the rotating table 220; the first adjusting screw 2171 is provided on the side of the sampling nozzle 210 near the center of the rotary stage 220, and the second adjusting screw 2172 is provided on the side of the sampling nozzle 210 near the edge of the rotary stage 220. Since the sampling nozzle is elongated (the outer nozzle holder and the inner scanning nozzle are also elongated), adjusting the height of the outer nozzle holder by only one adjusting screw may cause the front and rear ends of the outer nozzle holder to be unbalanced. Therefore, the front end and the rear end of the external nozzle frame are respectively adjusted by the two adjusting screws, the consistency of adjusting parameters of the first adjusting screw and the second adjusting screw is guaranteed, the front end and the rear end of the external nozzle frame can be ensured to be located on the same horizontal line, and the condition that the front end and the rear end of the external nozzle frame are unbalanced is avoided. Accurate regulation to outside nozzle carrier is realized through first adjusting screw and second adjusting screw in this application embodiment.
In the present embodiment, the inner scanning nozzle 212 includes an arcuate portion 2121 and a truncated pyramid portion 2122; the lower edge of the arched portion 2121 is connected to the upper edge of the prism base portion 2122; the side wall of the ridge portion 2122 is inclined in a direction approaching the axial center of the sampling nozzle 210 from the upper edge of the ridge portion 2122 to the lower edge of the ridge portion 2122. The lower edge of the ledge portion 2122 may contact the bearing surface of the rotating platform 220. As shown in fig. 2, the side wall of the prism portion 2122 is a slope that can cooperate with the air flow in the gas chamber to prevent the scanning liquid from overflowing the sampling nozzle 210.
Fig. 7 is a schematic diagram of adjusting the outer nozzle holder according to an embodiment of the present invention, as shown in fig. 7, here, a left portion of fig. 7 may be regarded as an unadjusted outer nozzle holder, a right portion of fig. 7 may be regarded as an adjusted outer nozzle holder, a distance between the adjusted outer nozzle holder and the wafer is greater than a distance between the unadjusted outer nozzle holder and the wafer, after the first adjusting screw and the second adjusting screw are adjusted, the distance between the outer nozzle holder and the wafer is changed, and under the condition that the pressure of the back-end gas chamber 213 is not changed, the larger the distance between the outer nozzle holder and the wafer is, the greater the gas flow velocity V ″ is3The larger (greater than the gas flow rate V)3) From Bernoulli's equation
It is known that the greater the gas flow rate, the lower the pressure and thus the pressure P ″3The smaller (less than pressure P)3) Corresponding to the pressure P' experienced by the internal scanning nozzle4And also becomes smaller. Therefore, the pressure of the front end and the rear end of the internal scanning nozzle can be more accurately measured under the condition that the distance between the external nozzle holder and the wafer is changed. By varying the distance between the outer nozzle holder and the rotary tableThe gas distribution capacity in the gas cavity can be flexibly adjusted, and the scanning liquid can be effectively recycled by the internal scanning nozzle.
It should be appreciated that reference throughout this specification to "one embodiment" or "an embodiment" means that a particular feature, structure or characteristic described in connection with the embodiment is included in at least one embodiment of the present application. Thus, the appearances of the phrases "in one embodiment" or "in an embodiment" in various places throughout this specification are not necessarily all referring to the same embodiment. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. It should be understood that, in the various embodiments of the present application, the sequence numbers of the above-mentioned processes do not mean the execution sequence, and the execution sequence of each process should be determined by its function and inherent logic, and should not constitute any limitation to the implementation process of the embodiments of the present application. The above-mentioned serial numbers of the embodiments of the present application are merely for description and do not represent the merits of the embodiments.
In the embodiments provided in the present application, it should be understood that the disclosed apparatus may be implemented in other manners. The above description is only for the specific embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present application, and shall be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (10)
1. A wafer surface contaminant sampling device, the device comprising: a sampling nozzle and a rotary table; wherein the content of the first and second substances,
the rotating platform is used for bearing the wafer and driving the wafer to rotate; the surface of the rotating platform, which is used for bearing the wafer, is a bearing surface;
the sampling nozzle is arranged on the bearing surface and opposite to the rotating table, the bottom surface of the sampling nozzle facing the rotating table is in a strip shape, and the long edge of the strip shape extends along a first direction; the first direction is a direction from the center of the rotating table to the edge of the rotating table;
the sampling nozzle comprises an outer nozzle frame and an inner scanning nozzle which are coaxially arranged;
the internal scanning nozzle is used for spraying scanning liquid onto the wafer through the bottom surface and recovering the scanning liquid on the wafer;
a gas chamber is formed between the outer nozzle frame and the inner scanning nozzle so as to block the scanning liquid in the sampling nozzle;
the gas chamber is divided into a front-end gas chamber and a rear-end gas chamber which are not communicated with each other along a second direction, and the second direction is a direction perpendicular to the first direction on the bottom surface.
2. The apparatus of claim 1,
the ratio of the length of the sampling nozzle in a first direction to the length of the sampling nozzle in a second direction is greater than or equal to 8, and the second direction is a direction perpendicular to the first direction on the bottom surface.
3. The apparatus of claim 1,
the length of the sampling nozzle along the first direction is 4cm-6 cm;
the length of the sampling nozzle along the second direction is 0.3cm-0.6cm,
the second direction is a direction perpendicular to the first direction on the bottom surface.
4. The wafer surface contaminant sampling device of claim 1, further comprising: a front end gas pipeline, a rear end gas pipeline and a scanning liquid pipeline; wherein the content of the first and second substances,
the front end gas pipeline is connected with the front end gas chamber, and the rear end gas pipeline is connected with the rear end gas chamber;
the scanning liquid pipeline is connected with the internal scanning nozzle.
5. The wafer surface contaminant sampling device of claim 1, further comprising: a first pressing assembly and a second pressing assembly; wherein the content of the first and second substances,
the first pressurizing assembly is connected with the front-end gas chamber and is used for independently controlling the pressure of the front-end gas chamber;
the second pressurizing assembly is connected with the rear end gas chamber and is used for independently controlling the pressure of the rear end gas chamber.
6. The apparatus of claim 1,
the distance between the lower edge of the inner scanning nozzle and the rotating table is smaller than the distance between the lower edge of the outer nozzle holder and the rotating table.
7. The apparatus of claim 1,
the distance between the lower edge of the outer nozzle holder and the rotating table is adjustable.
8. The apparatus as claimed in any one of claims 1 to 7, further comprising: adjusting the screw rod;
the adjusting screw rod is movably connected with the internal scanning nozzle and fixedly connected with the external nozzle frame;
the adjusting screw is used for adjusting the distance between the external nozzle frame and the rotating platform.
9. The apparatus of claim 8, wherein the wafer surface impurity sampling device,
the adjusting screw comprises a first adjusting screw and a second adjusting screw; the first adjusting screw and the second adjusting screw are used for jointly adjusting the distance between the external nozzle rack and the rotating platform;
the first adjusting screw rod is arranged on one side, close to the center of the rotating table, of the sampling nozzle, and the second adjusting screw rod is arranged on one side, close to the edge of the rotating table, of the sampling nozzle.
10. The apparatus for sampling impurities on the surface of a wafer according to any one of claims 1 to 7,
the inner scanning nozzle comprises an arch part and a prism part; the lower edge of the arched part is connected with the upper edge of the ridge part;
the side wall of the ridge portion is inclined in a direction approaching the axial center of the sampling nozzle from the upper edge of the ridge portion to the lower edge of the ridge portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011187557.2A CN112304703B (en) | 2020-10-29 | 2020-10-29 | Wafer surface impurity sampling device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011187557.2A CN112304703B (en) | 2020-10-29 | 2020-10-29 | Wafer surface impurity sampling device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112304703A CN112304703A (en) | 2021-02-02 |
| CN112304703B true CN112304703B (en) | 2021-11-12 |
Family
ID=74332487
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011187557.2A Active CN112304703B (en) | 2020-10-29 | 2020-10-29 | Wafer surface impurity sampling device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112304703B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115700899A (en) * | 2021-07-16 | 2023-02-07 | 江苏鲁汶仪器股份有限公司 | Nozzle for wafer scanning, scanning system and scanning method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1536636A (en) * | 2003-04-08 | 2004-10-13 | 力晶半导体股份有限公司 | Wafer surface ion sampling system and its method |
| JP2011128033A (en) * | 2009-12-18 | 2011-06-30 | Ias Inc | Nozzle for substrate analysis, and substrate analysis method |
| CN102194726A (en) * | 2011-05-23 | 2011-09-21 | 叶伟清 | Method for partially positioning and sampling surface of wafer |
| CN108351281A (en) * | 2016-03-01 | 2018-07-31 | 埃耶士株式会社 | The nozzle of substrate analysis |
| CN211788936U (en) * | 2020-04-30 | 2020-10-27 | 苏州恩腾半导体科技有限公司 | Suction nozzle device for recycling silicon wafer pollutants |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW587290B (en) * | 2001-03-21 | 2004-05-11 | Macronix Int Co Ltd | Wafer cleaning device |
-
2020
- 2020-10-29 CN CN202011187557.2A patent/CN112304703B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1536636A (en) * | 2003-04-08 | 2004-10-13 | 力晶半导体股份有限公司 | Wafer surface ion sampling system and its method |
| JP2011128033A (en) * | 2009-12-18 | 2011-06-30 | Ias Inc | Nozzle for substrate analysis, and substrate analysis method |
| CN102194726A (en) * | 2011-05-23 | 2011-09-21 | 叶伟清 | Method for partially positioning and sampling surface of wafer |
| CN108351281A (en) * | 2016-03-01 | 2018-07-31 | 埃耶士株式会社 | The nozzle of substrate analysis |
| CN211788936U (en) * | 2020-04-30 | 2020-10-27 | 苏州恩腾半导体科技有限公司 | Suction nozzle device for recycling silicon wafer pollutants |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112304703A (en) | 2021-02-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN112304703B (en) | Wafer surface impurity sampling device | |
| EP3351922B1 (en) | Method for analysis of a substrate using a nozzle | |
| US20090151753A1 (en) | Methods for transitioning a fluid meniscus to and from surfaces of a substrate | |
| EP1583137A2 (en) | Substrate meniscus interface and methods for operation | |
| CN1794420A (en) | Apparatus and method for processing a substrate | |
| CN1684231A (en) | Proximity meniscus manifold | |
| KR20150050416A (en) | Liquid processing apparatus | |
| CN205021838U (en) | Cutting machine | |
| CN104851774A (en) | Micro-fluidic three-dimensional focusing technology based nitrogen purging high-resolution mass spectrum electrospray ionization source and mass spectrum detection method | |
| KR100479308B1 (en) | Apparatus and method for extracting impurities on a substrate | |
| TW201719737A (en) | Semiconductor processing device, processing method thereof, and surface detecting method thereof | |
| US7568489B2 (en) | Method of and apparatus for eluting impurities | |
| JP3784696B2 (en) | Semiconductor wafer surface impurity recovery method and recovery apparatus | |
| CN217361501U (en) | Electrochemical surface treatment device | |
| CN1278403C (en) | Wafer surface ion sampling system and its method | |
| CN101752215B (en) | Method for the treatment of a semiconductor wafer | |
| KR101653987B1 (en) | Apparatus For Analyzing Substrate Contamination And Method Thereof | |
| US11742230B2 (en) | Contaminant detection tools including nebulizer and related methods | |
| EP3890002B1 (en) | Substrate analyzing method and substrate analyzing device | |
| CN219427159U (en) | Cutting device for semiconductor processing | |
| CN217033217U (en) | Automatic sampling device for detection for compound fertilizer production | |
| WO2023037564A1 (en) | Analysis liquid recovery method | |
| CN113130366B (en) | Nozzle for wafer scanning and system and application thereof | |
| CN211199477U (en) | Quick sintering equipment of polycrystalline silicon piece | |
| KR20160121384A (en) | Apparatus For Analyzing Substrate Contamination And Method Thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |