CN1536636A - Wafer surface ion sampling system and its method - Google Patents
Wafer surface ion sampling system and its method Download PDFInfo
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- CN1536636A CN1536636A CNA031093787A CN03109378A CN1536636A CN 1536636 A CN1536636 A CN 1536636A CN A031093787 A CNA031093787 A CN A031093787A CN 03109378 A CN03109378 A CN 03109378A CN 1536636 A CN1536636 A CN 1536636A
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- 238000005070 sampling Methods 0.000 title claims abstract description 157
- 238000000034 method Methods 0.000 title claims description 55
- 239000012530 fluid Substances 0.000 claims abstract description 79
- 238000011109 contamination Methods 0.000 claims abstract description 24
- 239000007921 spray Substances 0.000 claims abstract description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000012528 membrane Substances 0.000 claims abstract description 5
- 239000000284 extract Substances 0.000 claims description 179
- 230000007246 mechanism Effects 0.000 claims description 92
- 239000013078 crystal Substances 0.000 claims description 85
- 238000001035 drying Methods 0.000 claims description 61
- 238000004140 cleaning Methods 0.000 claims description 55
- 238000005507 spraying Methods 0.000 claims description 53
- 238000005406 washing Methods 0.000 claims description 43
- 239000006185 dispersion Substances 0.000 claims description 2
- 238000004804 winding Methods 0.000 claims description 2
- 239000007788 liquid Substances 0.000 abstract description 6
- 235000012431 wafers Nutrition 0.000 description 191
- 150000002500 ions Chemical class 0.000 description 51
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 32
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 32
- 239000002689 soil Substances 0.000 description 22
- 239000007789 gas Substances 0.000 description 18
- 229910052786 argon Inorganic materials 0.000 description 16
- 239000001307 helium Substances 0.000 description 16
- 229910052734 helium Inorganic materials 0.000 description 16
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 16
- 229910052757 nitrogen Inorganic materials 0.000 description 16
- 230000006835 compression Effects 0.000 description 14
- 238000007906 compression Methods 0.000 description 14
- 239000003344 environmental pollutant Substances 0.000 description 9
- 231100000719 pollutant Toxicity 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 8
- 238000004255 ion exchange chromatography Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
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- 238000000605 extraction Methods 0.000 description 4
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- 238000005259 measurement Methods 0.000 description 3
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- 239000003513 alkali Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
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- 238000001819 mass spectrum Methods 0.000 description 1
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- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
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- NHDHVHZZCFYRSB-UHFFFAOYSA-N pyriproxyfen Chemical compound C=1C=CC=NC=1OC(C)COC(C=C1)=CC=C1OC1=CC=CC=C1 NHDHVHZZCFYRSB-UHFFFAOYSA-N 0.000 description 1
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- Sampling And Sample Adjustment (AREA)
Abstract
A kind of sampling means for wafer surface ion, the means first offer detecting wafer and place wafer in sampling chamber and upturn the detecting wafer's surface, and then continuously interruptedly spray extracting fluid on the wafer's surface so as to form water membrane, synchronously maintain the thickness of the wafer membrane so that the ion contamination things in wafer surface dissolve in the extracting fluid, and then collect the extracting liquid in the bottom of the sampling chamber.
Description
Technical field
The invention relates to a kind of semiconductor fabrication process, and particularly relevant for a kind of crystal column surface ion sampler and method.
Background technology
In the manufacturing process of semiconductor crystal wafer, sixty-four dollar question is exactly the pollution problem of crystal column surface.Generally speaking, the pollutant that is attached to crystal column surface includes organic compounds, metal impurities and ionic soil.And these pollutants can be very big for the influence of the follow-up manufacturing process of product.For instance, these pollutants may cause assembly p-n to connect problems such as the electric leakage of face, the lifetime of reduction minority carrier, the breakdown voltage that reduces gate pole oxidation layer, plain conductor corrosion, and cause the quality of semiconductor subassembly and reliability to reduce, even cause semiconductor subassembly to lose efficacy.Therefore, in the manufacture process of semiconductor crystal wafer, the pollutant load that detects crystal column surface is very important.
In the testing process of wafer surface pollutant, most important promptly is the sampling manufacturing process of wafer surface pollutant.For instance, the pollution quantity detecting system of organic compound utilizes the sampling of SWA instrument, utilizes gas phase chromatographic analysis mass spectrum spectroscope (Gas ChromatographyMass Spectrometer, GC-MS) content of measurement organic compound then.The pollution quantity detecting system of metal impurities utilizes the sampling of WSPS instrument, utilizes inductively coupled plasma mass spectrometer (Inductively Coupled Plasma Mass Spectrometer, ICP-MS) content of measurement metal pollutant then.The contaminant capacity of ion then is that wafer is immersed in a period of time in two liters the pure water, so that ion is transferred in the water by crystal column surface.Utilize the ion chromatography instrument to concentrate and analyze the content of ion then.
Measure in the processing at above-mentioned wafer contamination thing, it is to utilize instrument to take a sample that the sampling of organic compound and metal impurities is handled, and sampling is handled all, and a single surface for wafer deals with, because semiconductor subassembly mainly is the single surface that is made in wafer, and only have in this lip-deep pollution to be only the problem place, so the pollution content detection of organic compound and metal impurities processing accuracy is higher.But, it is that the ion on wafer two sides all can be transferred in the pure water with in the pure water with two liters of wafer immersions that the sampling of ion is handled, and therefore measuring the ionic soil amount of coming out is the average contaminant capacity of whole wafer, be not the contaminant capacity on single surface, and make its accuracy that problem be arranged.
And, owing to use a large amount of pure water (2 liters) that the ion of crystal column surface is separated out, so the ion concentration in the water is very low, the needed time of step that water is concentrated also can increase, and loses time.Moreover because said method is to carry out in open space, wafer is not only polluted during manufacture, also may pollute when taking a sample with said method.That is, the pollutant in environment can pollute pure water in sampling process, and causes the measurement result of ionic contamination incorrect.
Summary of the invention
In view of this, purpose of the present invention is providing a kind of crystal column surface ion sampler and method exactly, can take the sample of ionic contamination on the single surface of wafer.
Another object of the present invention provides a kind of crystal column surface ion sampler and method, can reduce airborne pollutant sources, and measures the ionic soil amount of crystal column surface accurately.
Another purpose of the present invention provides a kind of crystal column surface ion sampler and method, can reduce the sampling sample volume, and then improves sample concentration and reduce concentration time, and can save analysis time.
The present invention proposes a kind of crystal column surface ion sampler, comprises following member at least.The sampling room has top and bottom, and top is to hold wafer, and the bottom is funnel-form and has extract collects mouth.The wafer carrying mechanism is arranged in this sampling room.The extract spraying mechanism is arranged at the top, sampling room.The extract feedway connects the extract spraying mechanism, and supplies with extract to the extract spraying mechanism.Washing/drying mechanism is made of washing/drying nozzle, cleaning solution supplying device and fluid supply apparatus, in order to the washing/drying sampling room.
The wafer carrying mechanism comprises several wafer mounting framves, and the central dispersion winding places the sidewall on the top of sampling room, and the outer surface of wafer mounting frame is provided with the first wafer gim peg that extends towards first direction.An end of wafer mounting frame passes the sidewall on the top of outstanding sampling room, and can rotate freely, and is provided with rotating handles.And the outer surface of wafer mounting frame is provided with the second wafer gim peg that extends towards second direction, and wherein second direction is different with first direction.The number of above-mentioned wafer mounting frame has three at least, and the height of one of them wafer mounting frame is a little less than other wafer mounting frame.Above-mentioned extract spraying mechanism can be several nozzles or the atomizer that is arranged at the top, sampling room uniformly.Comprise a temperature regulator in the extract feedway, can adjust the temperature of extract.
The present invention can rotate and the wafer mounting frame of conversion wafer gim peg by being provided with, and therefore goes for the wafer of different size.In addition, use crystal column surface ionic soil sampler of the present invention to compare with well-known sampler, the more well-known method of extract consumption is few, therefore can save extract consumption, save concentration time and reduce cost.And, can increase the extraction efficiency of ion by the temperature of adjusting extract.
The present invention proposes a kind of crystal column surface ion sampler, comprises following member at least.The sampling room has top and bottom, and top is to hold wafer, and the bottom is funnel-form and has extract collects mouth.The wafer carrying mechanism is arranged in the sampling room.Wafer carrying mechanism drive unit connects the wafer carrying mechanism, and drives the rotation of wafer carrying mechanism.The extract spraying mechanism is arranged at the top, sampling room.Mobile device clamping extract spraying mechanism is with mobile extract spraying mechanism.The extract feedway connects the extract spraying mechanism.
Above-mentioned crystal column surface ion sampler more is provided with the washing/drying member.Wherein the washing/drying nozzle is arranged in the sampling room, to spray cleaning fluid or fluid to the sampling room.The cleaning solution supplying device connects the washing/drying nozzle, to supply with cleaning fluid to the washing/drying nozzle.Fluid supply apparatus connects the washing/drying nozzle, to supply with fluid to the washing/drying nozzle.
Above-mentioned wafer carrying mechanism comprise the rotating shaft of mounting table, coaxial connection mounting table and be arranged at mounting table and rotating shaft between the mounting table adjustment part.The extract spraying mechanism is nozzle or atomizer.In extract feedway, cleaning solution supplying device, the fluid supply apparatus temperature regulator can be set, to adjust the temperature of extract, cleaning fluid or fluid.
The present invention utilizes wafer carrying mechanism drive unit to drive the rotation of wafer mounting table, and with the surface of extract spraying mechanism sprinkling extract to the desire mensuration ionic soil of wafer, therefore the lip-deep ion that has only desire to measure ionic soil can be extracted the liquid dissolving, and can determine the ionic soil amount of crystal column surface accurately.And the speed of rotation by control wafer carrying mechanism can make the moisture film on the crystal column surface be controlled at certain thickness, and can effectively make the ionic contamination dissolving on the crystal column surface.In addition, use crystal column surface ionic soil sampler of the present invention to compare with well-known sampler, the more well-known method of extract consumption is few, therefore can save extract consumption, save concentration time and reduce cost.And, can increase the extraction efficiency of ion by the temperature of adjusting extract.
In addition, crystal column surface ion sampler of the present invention is provided with the washing/drying nozzle in the sampling room, utilize this washing/drying nozzle can spray cleaning fluid carrying out the cleaning of sampling room, and then through the drying (can control temperature) of washing/drying nozzles spray fluid (nitrogen/helium/argon gas/compression drying air etc.) to carry out the sampling room thus.Carrying out sampling room's cleaning step, and after making sampling room's drying, can carry out one time cleaning step again, and collecting cleaning fluid, to confirm the cleanliness factor of sampling room.
The invention provides a kind of crystal column surface ion sampling method, provide wafer, and wafer is positioned in the sampling room.Continue to spray the desire sampling surface of extract in wafer then, forming moisture film, and the thickness of keeping moisture film makes the desire of the wafer lip-deep ionic contamination of sampling dissolve in extract.The extract of collecting and sampling chamber bottom then.
In said method, continue to spray the desire sampling surface of extract in wafer, to form moisture film, and the thickness of keeping moisture film dissolves in the step of extract the desire of the wafer lip-deep ionic contamination of sampling, can be by making angle of wafer tilt, and make the bottom of part extract flow to the sampling room.
In said method, continue to spray the desire sampling surface of extract in wafer, forming moisture film, and the thickness of keeping moisture film dissolves in the step of extract the desire of the wafer lip-deep ionic contamination of sampling, can and make the bottom of part extract flow by the rotation wafer to the sampling room.And, by the rotating speed of control wafer, can control the thickness of moisture film.
When the present invention handles in the sampling of carrying out ionic contamination, the desire that extract is sprayed to wafer is measured on the surface of ionic soil, adopt mode that makes an angle of wafer tilt or the mode that cooperates the wafer rotation then, the lip-deep ion that makes desire measure ionic soil can be extracted the liquid dissolving, and can determine the ionic soil amount of crystal column surface accurately.Use crystal column surface ionic soil sampling method of the present invention to compare with well-known sampling method, the more well-known method of extract consumption is few, therefore can save extract consumption, save concentration time and reduce cost.
The invention provides a kind of crystal column surface ion sampling method, provide wafer, and wafer is positioned in the sampling room.Continue to spray the desire sampling surface of extract then in wafer, to form moisture film, and the thickness of keeping moisture film makes the desire of the wafer lip-deep ionic contamination of sampling dissolve in extract, and makes angle of wafer tilt, and makes the bottom of part extract flow to the sampling room.Then, continue to spray the desire sampling surface of extract in wafer, to form moisture film, the thickness of keeping moisture film makes the ionic contamination on the desire sampling surface of wafer dissolve in extract, and the rotation wafer, and makes the bottom of part extract flow to the sampling room.Then, the extract of bottom, collecting and sampling chamber.
In said method,, can control the thickness of moisture film by the rotating speed of control wafer.And, also can repeat sampling and the step several that rotates sampling.
When the present invention handles in the sampling of carrying out ionic contamination, be to adopt simultaneously static inclination sampling method and dynamic rotation sampling method, so the rolling that do not stop of the moisture film of crystal column surface or shake, and help ion to be transferred to extract by crystal column surface.
For above and other objects of the present invention, feature and advantage can be become apparent, a preferred embodiment cited below particularly, and cooperate appended graphicly, be described in detail below.
Description of drawings
Fig. 1 is the crystal column surface ion sampler figure of first embodiment of the invention.
Fig. 2 is the crystal column surface ion sampler figure of second embodiment of the invention.
Symbol description
100,200: sampler
102,202: the sampling room
102a, 202 a: extract is collected mouth
104: wafer mounting frame
104a: rotating handles
104b, 104c: wafer gim peg
106,208: the extract spraying mechanism
106a: nozzle
108a, 212: extract feedway
108b, 116,214,220: fluid supply apparatus
110,222: wafer
112,216: the washing/drying nozzle
114,218: the cleaning solution supplying device
118a、118b、120a、120b、224a、224b、226a、226b：
Temperature control equipment
204: the wafer carrying mechanism
204a: mounting table
204b: mounting table adjustment part
204c: rotating shaft
206: wafer carrying mechanism drive unit
210: extract spraying mechanism mobile device
Embodiment
First embodiment
The shown a kind of crystal column surface ion sampler sketch of Fig. 1 according to first embodiment of the invention.
Please refer to Fig. 1, the crystal column surface ion sampler 100 of first embodiment of the invention, this sampler 100 are made of sampling room 102, wafer mounting frame 104, extract spraying mechanism 106, extract feedway 108a, fluid supply apparatus 108b, washing/drying nozzle 112, cleaning solution supplying device 114, fluid supply apparatus 116.Wherein, washing/drying nozzle 112, cleaning solution supplying device 114 constitute washing/drying mechanism with fluid supply apparatus 116.
Sampling room 102 can be divided into top and lower part.The top of sampling room 102 for example is the size that is designed to be able to holding semiconductor wafer 110 (wafer that comprises 8 o'clock wafers, 12 o'clock wafers or virtually any size).The lower part of sampling room 102 for example is to be designed to funnel-form, and has an extract collection mouthful 102a.
Several wafer mounting framves 104 for example are around the top that is arranged at sampling room 102.Each wafer mounting frame 104 for example is to be bar-shaped, and a distal process of wafer mounting frame 104 goes out the sampling room, wafer mounting frame 104 can be rotated freely, and be provided with rotating handles 104a at the jag of wafer mounting frame 104.For example be to be provided with the wafer gim peg 104b that extends toward a direction on the outer surface of wafer mounting frame 104, and the wafer gim peg 104c of past other direction extension.The bearing of trend of wafer gim peg 104b and wafer gim peg 104c is also inequality, and the bearing of trend of the bearing of trend of wafer gim peg 104b and wafer gim peg 104c needs to press from both sides 90 ° of angles at least, fixedly fastens so four groups of wafers can be set at most on the wafer mounting frame 104.Wherein wafer gim peg 104b for example is in order to fixing large scale wafer (as: 12 o'clock wafers), and wafer gim peg 104c for example is in order to fixing small size wafer, wafer gim peg 104b and wafer gim peg 104c (as: 8 o'clock wafers).In the present embodiment, the number that is provided with of wafer mounting frame 104 for example is at least three, and being provided with of one of them of wafer mounting frame 104 is lower than being provided with highly of other wafer mounting frame 104 highly at least, when making wafer 110 mountings on wafer mounting frame 104, wafer 110 can angle θ of inclination.
Extract spraying mechanism 106 for example is to be arranged at 102 tops, sampling room.Extract spraying mechanism 106 is made of several nozzles 106a (or atomizer).Spraying mechanism 106 can be sprayed on extract wafer 110 surfaces uniformly, and makes extract comprehensively be covered in crystal column surface.
Extract feedway 108a connects extract spraying mechanism 106, in order to supply with extract to extract spraying mechanism 106.Comprise a temperature regulator 118a among the extract feedway 108a, can adjust the temperature of extract.Fluid supply apparatus 108b connects extract spraying mechanism 106 and extract feedway 108a, in order to supply with fluid (comprising nitrogen/helium/argon gas/compression drying air etc.) to extract spraying mechanism 106 or supply with fluid (comprising nitrogen/helium/argon gas/compression drying air etc.) to extract feedway 108a, with pressure extraction liquid.Comprise a temperature regulator 118b among the fluid supply apparatus 108b, the temperature of adjustable rectification body.
Washing/drying nozzle 112 for example is to be arranged in the sampling room 102, in order to spray cleaning fluid (or nitrogen/helium/argon gas/compression drying air etc.) to sampling room 102, to clean sampling room 102.
Cleaning solution supplying device 114 for example is to connect washing/drying nozzle 112, in order to supply with cleaning fluid to washing/drying nozzle 112.Cleaning fluid for example is deionized water, deionized water/hydrogen peroxide etc.Comprise a temperature regulator 120a in the cleaning solution supplying device 114, can adjust the temperature of cleaning fluid.
Fluid supply apparatus 116 for example is to connect washing/drying nozzle 112, to washing/drying nozzle 112, can carry out the function of dry sampling room 102 in order to supply with fluid (comprising nitrogen/helium/argon gas/compression drying air etc.).Comprise a temperature regulator 120b in the fluid supply apparatus 116, the temperature of adjustable rectification body.
In first embodiment, extract spraying mechanism 106 can connect extract feedway 108a and fluid supply apparatus 108b, fluid supply apparatus 108b for example be nitrogen/helium/argon gas feed device, compressed air feedway and cleaning solution supplying device etc. (wherein, cleaning fluid for example is deionized water, deionized water/hydrogen peroxide etc.), by these fluid supply apparatus, can carry out cleaning step or drying steps to sampling room 102 before sampling or after the sampling.
The crystal column surface ion sampling method of the wafer sampler of using first embodiment of the invention then, is described.This kind crystal column surface ion sampling method is static inclination sampling method.
Please continue at first provides wafer 110 with reference to Fig. 1, and this wafer 110 for example is 12 o'clock wafers.Then, the rotating handles 104a of rotation wafer mounting frame 104 makes wafer gim peg 104b towards the top, and places wafer 110 on wafer mounting frame 104.Wherein, wafer 110 surfaces of desire sampling are towards the top.
Then, (for example: deionized water etc. supply with extract from extract feedway 108a, and this extract has utilized temperature regulator control temperature) to extract spraying mechanism 106, and utilize extract spraying mechanism 106 to make extract be sprayed to wafer 110 surfaces.After extract was sprayed to wafer 100 surfaces, the surface that extract can condense upon wafer 110 formed moisture film, and wafer 110 lip-deep ions can be dissolved in the extract.After wafer 110 lip-deep extracts increased to a certain degree, the part extract just can flow to 102 lower parts, sampling room and collect mouthful 102 outflows from extract along the inclined plane 110 of wafer, and concentrates in the sampling bottle (not icon).So, crystal column surface by the sprinkling extract that does not stop, make extract comprehensively cover crystal column surface, and control the spray rate or the intermittence of spraying extract and spray so that the moisture film on wafer 110 surfaces is kept certain thickness, and effectively increase the speed that ionic contamination removes from wafer 110 surfaces.After carrying out above-mentioned steps number minute, the ionic contamination on the crystal column surface just can be dissolved in the extract fully, and can stop the supply of extract this moment.
Then, collect the extract that mouthful 102a collects, can utilize the ion chromatography instrument to analyze the content of ion from extract.Certainly, collecting a extract that mouthful 102a collects from extract also can carry out utilizing the ion chromatography instrument to analyze the content of ion again after the concentration step.
Then, take off wafer 110 from wafer mounting frame 104 after, utilize cleaning solution supplying device 114 to supply with cleaning fluids, to clean sampling room 102 to washing/drying nozzle 112.After fully cleaning, can stop the supply of cleaning fluid, and dry up sampling room 102, stop the supply of fluid (nitrogen/helium/argon gas/compression drying air etc.) then from fluid supply apparatus 116 supply fluids (nitrogen/helium/argon gas/compression drying air etc.).Certainly, the cleaning step of sampling room 102 also can utilize extract spraying mechanism 106 to clean simultaneously.
When the present invention handles in the sampling of carrying out ionic contamination, be to adopt the lip-deep mode that extract is sprayed to the desire mensuration ionic soil of wafer 110, therefore the lip-deep ion that has only desire to measure ionic soil can be extracted the liquid dissolving, and can determine the ionic soil amount of crystal column surface accurately.And crystal column surface ion sampler of the present invention is provided with and can rotates and the wafer mounting frame 104 of conversion wafer gim peg, therefore goes for the wafer of different size.In addition, crystal column surface ion sampler of the present invention can be by control wafer tilt angle, and the collection of control extraction fluid.Ratio method is few mutually with the more well-known sampler of the employed extract consumption of method to use crystal column surface ionic soil sampler of the present invention, therefore can save extract consumption, save concentration time and reduce cost.
In addition, crystal column surface ion sampler of the present invention can be arranged in the clean microenvironment (Mini-environment) where necessary, for example be to be provided with air exhauster, chemical filter and ultra tiny penetration air filter membrane (Ultra LowPenetration Air, cabinet ULPA) (Hood).Have the acid and the function of alkali of removing in the cabinet because ULPA can filter ultramicron, chemical filter in the cabinet, so can make cabinet keep certain cleanliness factor.
Second embodiment
Fig. 2 is shown is a kind of crystal column surface ion sampler sketch according to second embodiment of the invention.
Please refer to Fig. 2, the crystal column surface ion sampler 200 of second embodiment of the invention, this sampler 200 are made of sampling room 202, wafer carrying mechanism 204, wafer carrying mechanism drive unit 206, extract spraying mechanism 208, extract spraying mechanism mobile device 210, extract feedway 212, fluid supply apparatus 214, washing/drying nozzle 216, cleaning solution supplying device 218, fluid supply apparatus 220.Wherein, washing/drying nozzle 216, cleaning solution supplying device 218 constitute washing/drying mechanism with fluid supply apparatus 220.
Sampling room 202 can be divided into top and lower part.The top of sampling room 102 for example is the size (comprising 8 o'clock wafers and 12 o'clock wafers) that is designed to be able to holding semiconductor wafer 222.The lower part of sampling room 202 for example is to be designed to funnel-form, and has an extract collection mouthful 202a.
Wafer carrying mechanism 204 for example is to be arranged in the sampling room 102.Wafer carrying mechanism 204 is made of mounting table 204a, mounting table adjustment part 204b and rotating shaft 204c.Mounting table 204a and rotating shaft 204c for example are coaxial linking together, and the size of mounting table 204 needs the size less than the wafer of desire sampling.Mounting table adjustment part 204b is arranged between mounting table 204a and the rotating shaft 204c, in order to adjust mounting table 204a, makes mounting table 204a have an angle of inclination.
Wafer carrying mechanism drive unit 206 connects wafer carrying mechanisms 204, with so that wafer carrying mechanism 204 can rotate.
Extract spraying mechanism 208 for example is to be arranged at 202 tops, sampling room.Extract spraying mechanism 208 for example is nozzle (or atomizer).
Mobile device 210 for example is a clamping extract spraying mechanism 208, in order to mobile extract spraying mechanism 208.Because mobile device 210 can mobile extract spraying mechanism, thereby extract comprehensively can be covered on the wafer.
Extract feedway 212 for example is to connect extract spraying mechanism 208, in order to supply with extract to extract spraying mechanism 208.Comprise a temperature regulator 224a in the extract feedway 212, can adjust the temperature of extract.
Fluid supply apparatus 214 for example is to connect extract spraying mechanism 208, in order to supply with fluid (comprising nitrogen/helium/argon gas/compression drying air etc.) to extract spraying mechanism 208.Comprise a temperature regulator 224b in the fluid supply apparatus 214, the temperature of adjustable rectification body.
Washing/drying nozzle 216 for example is to be arranged in the sampling room 202, in order to spray cleaning fluid (or nitrogen/helium/argon gas/compression drying air etc.) to sampling room 202, to clean sampling room 202.
Cleaning solution supplying device 218 for example is to connect washing/drying nozzle 216, in order to supply with cleaning fluid to washing/drying nozzle 216.Comprise a temperature regulator 226a in the cleaning solution supplying device 218, can adjust the temperature of cleaning fluid.
Fluid supply apparatus 220 for example is to connect washing/drying nozzle 216, to washing/drying nozzle 216, can carry out the function of dry sampling room 202 in order to supply with fluid (comprising nitrogen/helium/argon gas/compression drying air etc.).Comprise a temperature regulator 226b in the fluid supply apparatus 220, the temperature of adjustable rectification body.
In a second embodiment, be so that an extract spraying mechanism 208 to be set, and utilize mobile device 210 clampings, mobile extract spraying mechanism 208 to explain for example.Can certainly be the same with first embodiment, several extract spraying mechanisms are set at the top, sampling room, and do not need to be provided with mobile device.
The crystal column surface ion sampling method of the wafer sampler of using second embodiment of the invention then, is described.This kind crystal column surface ion sampling method is dynamically to rotate sampling method.
Please continue at first provides wafer 222 with reference to Fig. 2, and this wafer 222 for example is 12 o'clock wafers.Then, wafer 222 is positioned on the mounting table 204a, the method that wherein makes wafer 222 be fixed on mounting table 204a surface comprises makes wafer 222 be adsorbed on mounting table 204a surface.For instance, can several holes be set in mounting table 204a, these holes all are connected to air extractor, utilize air extractor to make wafer 222 be adsorbed on mounting table 204a surface then.Wherein, the desire of wafer 222 sampling surface is towards the top.Then, utilize wafer carrying mechanism drive unit 206 to drive 204 rotations of wafer carrying mechanism.
Because wafer is to utilize suction type to be fixed on the mounting table 204a, so the wafer of different size all can use this sampler, and does not need the action of dismounting.
On the other hand, (for example:, and utilize extract spraying mechanism 208 to make extract be sprayed to wafer 222 surfaces supply with extract from extract feedway 212 deionized water) to extract spraying mechanism 208.At this moment, utilize the moving direction of mobile device 210 control extract spraying mechanisms 208, make extract can be sprayed to wafer 222 surfaces uniformly.After extract was sprayed to wafer 22 2 surfaces, extract can condense upon wafer 222 surfaces and form moisture film and comprehensively cover crystal column surface, and wafer 222 lip-deep ions can be dissolved in the extract.At this moment, by the rotary speed of control wafer carrying mechanism 204, can control wafer 222 lip-deep water film thicknesses.After wafer 222 lip-deep extracts increased to a certain degree, the part extract just can be thrown out of wafer 222 surfaces, and collected a mouthful 202a outflow via the inclined plane of sampling room 202 from extract, and concentrated in the sampling bottle (not icon).So, by the sprinkling extract that does not stop to crystal column surface, and control sprays the spray rate of extract and the wafer speed of rotation so that the moisture film on wafer 222 surfaces is kept certain thickness, and can effectively increase the speed that ionic contamination removes from wafer 222 surfaces.After carrying out above-mentioned steps number minute, ionic contamination on the crystal column surface just can be dissolved in the extract fully, can stop the supply of extract this moment, the high speed rotating wafer and from fluid supply apparatus 214 supply with fluids (nitrogen/helium/argon gas) wait dry up the extract of wafer 222 remained on surface after, stop the supply of fluid and stop wafer carrying mechanism rotating.
On the other hand, collect the extract that mouthful 202a collects, can utilize the ion chromatography instrument to analyze the content of ion from extract.Certainly, after collecting a extract that mouthful 202a collects and also can utilize the ion chromatography instrument to concentrate from extract, analyze the content of ion again.
Then, take off wafer 222 from wafer carrying mechanism 204 after, utilize cleaning solution supplying device 218 to supply with cleaning fluids, to clean sampling room 202 to washing/drying nozzle 216.After fully cleaning, can stop the supply of cleaning fluid, and dry up sampling room 202, stop the supply of fluid (nitrogen/helium/argon gas/compression drying air etc.) then from fluid supply apparatus 220 supply fluids (nitrogen/helium/argon gas/compression drying air etc.).Certainly, the cleaning step of sampling room 202 also can utilize extract spraying mechanism 208 to clean simultaneously.
When the present invention handles in the sampling of carrying out ionic contamination, be to adopt the surface that extract is sprayed to the desire mensuration ionic soil of wafer 222, and cooperation makes the mode of wafer rotation, make extract cover desire measures on the surface of ionic soil comprehensively, the liquid dissolving can be extracted owing to measure the lip-deep ion of ionic soil, and the ionic soil amount of crystal column surface can be determined accurately.And the speed of rotation by control wafer carrying mechanism can make wafer 222 lip-deep moisture films be controlled at certain thickness, and can effectively make the ionic contamination dissolving on the crystal column surface.In addition, use the more well-known method of the employed extract consumption of crystal column surface ionic soil sampler ratio method of the present invention few, therefore can save extract consumption, save concentration time and reduce cost.In addition, after sampling procedure, also can utilize high speed rotating that wafer is spin-dried for, then wafer can be back to and continue on the production line to use.
And the wafer sampler of second embodiment of the invention possesses cleaning device is arranged, and therefore can the program of setting up on their own carry out the cleaning of sampling room, and can be with the air cleaningization in the sampling room.In addition, after carrying out sampling room's cleaning step, after sampling room's drying, carry out cleaning step again one time, and collect cleaning fluid, detect the sampling room and whether clean up.
In addition, crystal column surface ion sampler of the present invention can be arranged in the clean microenvironment (Mini-environment) where necessary, for example is the cabinet that is provided with air exhauster, chemical filter and ULPA.Have the acid and the function of alkali of removing in the cabinet because ULPA can filter particulate, chemical filter in the cabinet, so can make cabinet keep certain cleanliness factor.
Certainly, the wafer sampler of second embodiment of the invention can be applicable to static inclination sampling method simultaneously and dynamically rotate sampling method.And, can ion be dissolved in the extract by these two kinds of sampling methods of combination.It is described as follows states.
Please refer to Fig. 2, can carry out static inclination sampling method earlier, wafer 222 is fixed in mounting table 204a after, utilize mounting table adjustment part 204a to adjust mounting table 204a, make its angle that tilts.Then, utilize extract spraying mechanism 208 to make extract evenly be sprayed to wafer 222 surfaces, and in wafer 222 surface formation moisture films, make wafer 222 lip-deep ions be dissolved to extract, and flow down along the inclined plane 222 of wafer, and from extract collection mouthful 202a outflow, and concentrate in the sampling bottle (not icon).
Follow again, dynamically rotate sampling method, make 204 rotations of wafer carrying mechanism, and continue to make extract to be sprayed to wafer 222 surfaces to form moisture film.With the control water film thickness, and the part extract just can be thrown out of wafer 222 surfaces by the rotary speed of control wafer carrying mechanism 204, and collects mouthful 202a via the inclined plane of sampling room 202 from extract and flow out, and concentrates in the sampling bottle (not icon).After carrying out a period of time, wafer carrying mechanism 204 is stopped the rotation.
Then, repeat static inclination sampling method and dynamically rotate sampling method for several times, make the ionic contamination on the crystal column surface be dissolved in the extract fully, can stop the supply of extract this moment, and after supplying with fluids (nitrogen/helium/argon gas/compression drying air etc.) and dry up the extract of wafer 222 remained on surface from fluid supply apparatus 214, stop the supply of fluid (nitrogen/helium/argon gas/compression drying air etc.) and the wafer carrying mechanism is stopped the rotation.
On the other hand, collect the extract that mouthful 202a collects, can utilize the ion chromatography instrument to analyze the content of ion from extract.Certainly, after collecting a extract that mouthful 202a collects and also can utilize the ion chromatography instrument to concentrate from extract, analyze the content of ion again.
When the present invention handles in the sampling of carrying out ionic contamination, be to adopt simultaneously static inclination sampling method and dynamic rotation sampling method, so the rolling that do not stop of the moisture film of crystal column surface or shake, and help ion to be transferred to extract from crystal column surface.
Crystal column surface ion sampler of the present invention and method also can be used for monitoring environment and pollute or wafer environment (as wafer carrier, peripheral environment etc.) except can detecting the ionic soil on the crystal column surface.For instance, be statically placed in the wafer carrier after a period of time,, measure the ionic soil amount of crystal column surface, can understand this wafer carrier inside and whether be polluted with apparatus and method of the present invention through clean wafer.
Though the present invention discloses as above with a preferred embodiment; right its is not in order to limit the present invention; anyly have the knack of this skill person; without departing from the spirit and scope of the present invention; when the change that can do some a little and retouching, so protection scope of the present invention is as the criterion when looking accompanying the claim person of defining.
Claims (25)
1. crystal column surface ion sampler is characterized in that comprising:
A sampling room has a top and a bottom, and this top is to hold a wafer, and this bottom is funnel-form, and has an extract collection mouth;
A wafer carrying mechanism is arranged in this sampling room;
An extract spraying mechanism is arranged at this top, sampling room, sprays the surface of a kind of extract to this wafer; And
An extract feedway connects this extract spraying mechanism, and supplies with this extract to this extract spraying mechanism.
2. according to 1 described crystal column surface ion sampler of claim the, it is characterized in that this wafer carrying mechanism comprises several wafer mounting framves, the central dispersion winding places the sidewall on the top of this sampling room, and respectively the outer surface of this wafer mounting frame is provided with one the first wafer gim peg that extends towards a first direction.
3. according to 2 described crystal column surface ion samplers of claim the, it is characterized in that an end of these wafer mounting framves passes the sidewall on the top of outstanding this sampling room, and can rotate freely.
4. according to 2 described crystal column surface ion samplers of claim the, it is characterized in that comprising a rotating handles, be arranged at the end of these wafer mounting framves.
5. according to 2 described crystal column surface ion samplers of claim the, it is characterized in that the outer surface of these wafer mounting framves comprises one the second wafer gim peg that is provided with towards a second direction extension, this second direction is different with this first direction.
6. according to 2 described crystal column surface ion samplers of claim the, the number that it is characterized in that these wafer mounting framves is three at least.
7. according to 2 described crystal column surface ion samplers of claim the, it is characterized in that one of them individual height of these wafer mounting framves is a little less than other these wafer mounting framves.
8. according to 1 described crystal column surface ion sampler of claim the, it is characterized in that this extract spraying mechanism comprises several nozzles or atomizer, is arranged on the top of this sampling room uniformly.
9. according to 1 described crystal column surface ion sampler of claim the, it is characterized in that comprising in this extract feedway being provided with a temperature regulator, control the temperature of this extract.
10. according to 1 described crystal column surface ion sampler of claim the, it is characterized in that being provided with a washing/drying mechanism, this washing/drying mechanism comprises:
A washing/drying nozzle is arranged in this sampling room, to spray a kind of cleaning fluid or a kind of fluid to this sampling room;
A cleaning solution supplying device connects this washing/drying nozzle, to supply with this cleaning fluid to this washing/drying nozzle; And
A fluid supply apparatus connects this washing/drying nozzle, to supply with this fluid to this washing/drying nozzle.
11. according to 1 described crystal column surface ion sampler of claim the, it is characterized in that comprising in this cleaning solution supplying device being provided with a temperature regulator, control the temperature of this cleaning fluid.
12. according to 1 described crystal column surface ion sampler of claim the, it is characterized in that comprising in this fluid supply apparatus being provided with a temperature regulator, control the temperature of this fluid.
13. a crystal column surface ion sampler is characterized in that comprising:
A sampling room has a top and a bottom, and this top is to hold a wafer, and this bottom is funnel-form, and has an extract collection mouth;
A wafer carrying mechanism is arranged in this sampling room;
A wafer carrying mechanism drive unit connects this wafer carrying mechanism, drives this wafer carrying mechanism rotation;
An extract spraying mechanism is arranged at the napex of this sampling room;
A mobile device, this extract spraying mechanism of clamping is to move this extract spraying mechanism;
An extract feedway connects this extract spraying mechanism;
A washing/drying nozzle is arranged in this sampling room, to spray a kind of cleaning fluid or a kind of fluid to this sampling room;
A cleaning solution supplying device connects this washing/drying nozzle, to supply with this cleaning fluid to this washing/drying nozzle; And
A fluid supply apparatus connects this washing/drying nozzle, to supply with this fluid to this washing/drying nozzle.
14., it is characterized in that this wafer carrying mechanism comprises according to 13 described crystal column surface ion samplers of claim the:
A mounting table;
A rotating shaft, this connects above-mentioned mounting table; And
A mounting table adjustment part is arranged between this mounting table and this rotating shaft.
15., it is characterized in that this extract spraying mechanism comprises nozzle or atomizer according to 13 described crystal column surface ion samplers of claim the.
16. according to 13 described crystal column surface ion samplers of claim the, it is characterized in that comprising in this extract feedway being provided with a temperature regulator, control the temperature of this extract.
17. according to 13 described crystal column surface ion samplers of claim the, it is characterized in that comprising in this cleaning solution supplying device being provided with a temperature regulator, control the temperature of this cleaning fluid.
18. according to 13 described crystal column surface ion samplers of claim the, it is characterized in that comprising in this fluid supply apparatus being provided with a temperature regulator, control the temperature of this fluid.
19. a crystal column surface ion sampling method is characterized in that comprising:
(a). a wafer is provided;
(b). this wafer is placed in the sampling room;
(c). continue to spray the desire sampling surface of a kind of extract in this wafer, forming water membrane, and the thickness of keeping this moisture film makes the desire of this wafer lip-deep ionic contamination of sampling dissolve in this extract; And
(d). collect this extract of this bottom, sampling room.
20. according to 19 described crystal column surface ion sampling methods of claim the, it is characterized in that this step (c) comprises to make angle of this wafer tilt, and make the bottom of this extract flow of part to this sampling room.
21., it is characterized in that this step (c) comprises this wafer of rotation, and make the bottom of this extract flow of part to this sampling room according to 19 described crystal column surface ion sampling methods of claim the.
22., it is characterized in that this step (c) comprises the rotating speed of controlling this wafer, to control the thickness of this moisture film according to 21 described crystal column surface ion sampling methods of claim the.
23. a crystal column surface ion sampling method is characterized in that comprising:
(a). a wafer is provided;
(b). this wafer is placed in the sampling room;
(c). continue to spray the desire sampling surface of a kind of extract in this wafer, to form water membrane, and the thickness of keeping this moisture film makes the desire of this wafer lip-deep ionic contamination of sampling dissolve in this extract, and make angle of this wafer tilt, and make the bottom of this extract flow of part to this sampling room;
(d). continue to spray the desire sampling surface of this extract in this wafer, to form this moisture film, the thickness of keeping this moisture film makes the ionic contamination on the desire sampling surface of this wafer dissolve in this extract, and rotates this wafer, and makes the bottom of this extract flow of part to this sampling room; And
(e). collect this extract of this bottom, sampling room.
24., it is characterized in that this step (d) comprises the rotating speed of controlling this wafer, to control the thickness of this moisture film according to 23 described crystal column surface ion sampling methods of claim the.
25., it is characterized in that this step (e) more comprises before to repeat this step (c) and this step (d) for several times according to 23 described crystal column surface ion sampling methods of claim the.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03109378 CN1278403C (en) | 2003-04-08 | 2003-04-08 | Wafer surface ion sampling system and its method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03109378 CN1278403C (en) | 2003-04-08 | 2003-04-08 | Wafer surface ion sampling system and its method |
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| CN1536636A true CN1536636A (en) | 2004-10-13 |
| CN1278403C CN1278403C (en) | 2006-10-04 |
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| CN 03109378 Expired - Fee Related CN1278403C (en) | 2003-04-08 | 2003-04-08 | Wafer surface ion sampling system and its method |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103969565A (en) * | 2013-01-28 | 2014-08-06 | 三菱电机株式会社 | Semiconductor evaluating device and semiconductor evaluating method |
| CN106662507A (en) * | 2014-08-20 | 2017-05-10 | 埃耶士株式会社 | Automatic localized substrate analysis device and analysis method |
| WO2019232741A1 (en) * | 2018-06-07 | 2019-12-12 | Acm Research (Shanghai) Inc. | Apparatus and method for cleaning semiconductor wafers |
| CN111983430A (en) * | 2020-08-26 | 2020-11-24 | 西安奕斯伟硅片技术有限公司 | Wafer surface treatment device and wafer surface anion and cation sampling method |
| CN112304703A (en) * | 2020-10-29 | 2021-02-02 | 长江存储科技有限责任公司 | Wafer surface impurity sampling device |
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2003
- 2003-04-08 CN CN 03109378 patent/CN1278403C/en not_active Expired - Fee Related
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103969565A (en) * | 2013-01-28 | 2014-08-06 | 三菱电机株式会社 | Semiconductor evaluating device and semiconductor evaluating method |
| US9335371B2 (en) | 2013-01-28 | 2016-05-10 | Mitsubishi Electric Corporation | Semiconductor evaluating device and semiconductor evaluating method |
| CN103969565B (en) * | 2013-01-28 | 2016-12-07 | 三菱电机株式会社 | Quasiconductor evaluating apparatus and quasiconductor evaluation methodology |
| CN106662507A (en) * | 2014-08-20 | 2017-05-10 | 埃耶士株式会社 | Automatic localized substrate analysis device and analysis method |
| WO2019232741A1 (en) * | 2018-06-07 | 2019-12-12 | Acm Research (Shanghai) Inc. | Apparatus and method for cleaning semiconductor wafers |
| JP2021530859A (en) * | 2018-06-07 | 2021-11-11 | エーシーエム リサーチ （シャンハイ） インコーポレーテッド | Semiconductor wafer cleaning equipment and cleaning method |
| JP7165754B2 (en) | 2018-06-07 | 2022-11-04 | エーシーエム リサーチ （シャンハイ） インコーポレーテッド | Semiconductor wafer cleaning device and cleaning method |
| CN111983430A (en) * | 2020-08-26 | 2020-11-24 | 西安奕斯伟硅片技术有限公司 | Wafer surface treatment device and wafer surface anion and cation sampling method |
| CN112304703A (en) * | 2020-10-29 | 2021-02-02 | 长江存储科技有限责任公司 | Wafer surface impurity sampling device |
| CN112304703B (en) * | 2020-10-29 | 2021-11-12 | 长江存储科技有限责任公司 | Wafer surface impurity sampling device |
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| Publication number | Publication date |
|---|---|
| CN1278403C (en) | 2006-10-04 |
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