CN112289815A - OLED substrate, manufacturing method and display panel - Google Patents

OLED substrate, manufacturing method and display panel Download PDF

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Publication number
CN112289815A
CN112289815A CN202011182871.1A CN202011182871A CN112289815A CN 112289815 A CN112289815 A CN 112289815A CN 202011182871 A CN202011182871 A CN 202011182871A CN 112289815 A CN112289815 A CN 112289815A
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layer
substrate
display area
oled substrate
oled
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Inventor
贾文斌
万想
高昕伟
王明
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BOE Technology Group Co Ltd
Hefei BOE Joint Technology Co Ltd
Hefei BOE Zhuoyin Technology Co Ltd
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BOE Technology Group Co Ltd
Hefei BOE Zhuoyin Technology Co Ltd
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Priority to CN202011182871.1A priority Critical patent/CN112289815A/en
Publication of CN112289815A publication Critical patent/CN112289815A/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The embodiment of the application provides an OLED substrate, a manufacturing method and a display panel, wherein the OLED substrate comprises a substrate and a flat layer arranged on the substrate, and the flat layer is made of organic silicon; the OLED substrate is provided with a pixel electrode and a pixel defining layer, the pixel electrode and the pixel defining layer are arranged on one side, away from the substrate, of the flat layer, and the pixel defining layer is provided with a pixel area containing printing ink. In the OLED substrate of the embodiment, the organic silicon is used for manufacturing the flat layer, has the characteristic of low shrinkage-drying ratio and has a good flat effect, so that the flatness of the pixel electrode can be ensured, and the uniformity of the film layer after the printing ink film is formed can be further ensured.

Description

OLED substrate, manufacturing method and display panel
Technical Field
The embodiment of the application relates to the technical field of display panels, in particular to an OLED substrate, a manufacturing method and a display slow plate.
Background
An OLED (Organic Light-Emitting Diode) display panel includes an OLED substrate, an anode, a Light-Emitting layer and a cathode, wherein the Light-Emitting layer is disposed between the anode and the cathode, and the Light emission is realized by controlling carrier injection and recombination in the Light-Emitting layer through the anode and the cathode.
The anode is arranged on one side of the OLED substrate, the OLED substrate is also provided with a pixel defining layer on the same side of the anode, the pixel defining layer is used for manufacturing a pixel pit above the anode in a deposition, exposure and development mode, and the pixel pit is used for placing an organic light-emitting material for forming a pixel. The OLED display panel can be manufactured in an ink-jet printing mode. In ink-jet printing, printing ink is printed into designated pixel pits by a pico-liter printer, so that the light-emitting layer is manufactured. The ink-jet printing technology can greatly reduce the waste of materials, can realize patterning and full-color printing, and is suitable for preparing large-area display panels.
However, since the printing ink is in a solvent state, in order to ensure that the film layer formed by the printing ink is relatively uniform, the anode needs to have a better flatness, and is disposed on the outer side of the OLED substrate. In order to ensure the flatness of the anode, the OLED substrate in the related art is provided with a planarization layer made of an organic resin on the outer side. However, since the drying shrinkage of the organic resin is relatively large, the planarization effect of the planarization layer made of the organic resin is limited.
Disclosure of Invention
An embodiment of the present invention provides an OLED substrate, a method for manufacturing the same, and a display panel, so as to improve a planarization effect of a planarization layer.
In view of the above, in a first aspect, an embodiment of the present application provides an OLED substrate, including a substrate and a planarization layer disposed on the substrate, where the planarization layer is made of silicone; the OLED substrate is provided with a pixel electrode and a pixel defining layer, the pixel electrode and the pixel defining layer are arranged on one side, away from the substrate, of the flat layer, and the pixel defining layer is provided with a pixel area containing printing ink.
In the OLED substrate of the embodiment, the organic silicon is used for manufacturing the flat layer, has the characteristic of low shrinkage-drying ratio and has a good flat effect, so that the flatness of the pixel electrode can be ensured, and the uniformity of the film layer after the printing ink film is formed can be further ensured.
In one possible embodiment, the OLED substrate includes a display region and a non-display region, and the planarization layer is disposed in the display region.
In one possible embodiment, the OLED substrate includes, in the non-display region, the substrate, a metal wiring layer, a first passivation layer, and a metal buffer layer, which are stacked.
In one possible embodiment, the metal buffer layer is a transparent metal layer.
In one possible embodiment, the OLED substrate includes, in the non-display region, the substrate, a metal routing layer, a first passivation layer, and a second passivation layer, which are stacked.
In one possible embodiment, the OLED substrate further includes a third passivation layer wrapping an outer side of the planarization layer.
In one possible embodiment, the third passivation layer includes a first covering portion extending on an outer side of the planar layer away from the substrate base plate, and a second covering portion connected to the first covering portion and extending along an outer peripheral end portion of the planar layer, the second covering portion extending beyond the planar layer by a distance.
In a second aspect, an embodiment of the present application provides a method for manufacturing an OLED substrate, where the OLED substrate includes a display area and a non-display area disposed outside the display area;
the manufacturing method comprises the following steps:
obtaining a substrate base plate;
sequentially forming a metal wiring layer, a first passivation layer, a metal buffer layer and an organic silicon flat layer on the substrate base plate;
dry etching to remove the part of the organic silicon flat layer, which is positioned in the non-display area;
and etching to remove the metal buffer layer.
In a third aspect, an embodiment of the present application provides a method for manufacturing an OLED substrate, where the OLED substrate includes a display area and a non-display area disposed outside the display area;
the manufacturing method comprises the following steps:
obtaining a substrate base plate;
sequentially forming a metal wiring layer, a first passivation layer and an organic silicon flat layer on the substrate base plate;
dry etching to remove the part of the organic silicon flat layer, which is positioned in the non-display area;
and manufacturing a second passivation layer on the outer side of the metal wiring layer corresponding to the non-display area.
In a fourth aspect, an embodiment of the present application provides a display panel, including the OLED substrate described in the first aspect.
The display panel of this embodiment includes the OLED substrate in the first aspect, so that the technical effect of the OLED substrate in the first aspect is achieved, and details are not repeated here.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only the embodiments of the present application, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an OLED substrate according to an embodiment of the present disclosure;
fig. 2 is a flowchart of a method for manufacturing an OLED substrate according to an embodiment of the present disclosure;
FIG. 3 is a first schematic structural diagram of the OLED substrate in the non-display region in the manufacturing method of FIG. 2;
FIG. 4 is a second schematic structural view of the OLED substrate in the non-display area in the manufacturing method of FIG. 2;
FIG. 5 is a third schematic view illustrating the structure of the OLED substrate in the non-display area in the manufacturing method of FIG. 2;
FIG. 6 is a flowchart of another method for fabricating an OLED substrate according to an embodiment of the present disclosure;
FIG. 7 is a first schematic view illustrating a non-display region of the OLED substrate manufactured by the method of FIG. 6;
FIG. 8 is a second schematic structural view of the OLED substrate in the non-display area in the manufacturing method of FIG. 6;
FIG. 9 is a third schematic view illustrating a structure of the OLED substrate in a non-display area in the manufacturing method of FIG. 6;
fig. 10 is a schematic structural diagram of another OLED substrate according to an embodiment of the present disclosure.
Description of reference numerals:
100-display area, 200-non-display area, 1-substrate base plate, 2-thin film transistor, 3-metal wiring layer, 4-metal buffer layer, 5-organic silicon flat layer, 6-first passivation layer, 7-second passivation layer and 8-third passivation layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Fig. 1 is a schematic structural view of an OLED substrate provided in an embodiment of the present disclosure, as shown in fig. 1, the OLED substrate includes a display area 100 and a non-display area 200, the display area 100 is an area corresponding to a pixel in an OLED display panel, and is also referred to as an aa (active area) area, and the non-display area 200 is located at an outer periphery of the display area 100.
The OLED substrate is used for manufacturing the OLED display panel through an ink-jet printing technology, a pixel electrode and a pixel defining layer are required to be formed on the OLED substrate in the process of manufacturing the OLED display panel on the outer side of the OLED substrate, the pixel defining layer is manufactured into a pixel area corresponding to the pixel electrode through deposition, exposure and development, the pixel electrode is opposite to the pixel area, and an ink-jet printer is used for printing ink into the pixel area to form pixels. The display area 100 in the OLED substrate is an area corresponding to the pixel area.
The OLED substrate comprises a flat layer, wherein the flat layer is used for providing a manufacturing basis for a pixel electrode and a pixel defining layer, namely the pixel electrode is arranged on the flat layer. The printing ink adopted in the ink-jet printing is in a solvent state, the requirement on the flatness of the pixel electrode is high to ensure the uniformity of the film layer after the printing ink forms the film, the pixel electrode is arranged on the outer side of the flat layer, and the requirement on the flatness of the pixel electrode is converted into the requirement on the flatness of the flat layer, namely, the good flat layer can ensure the good flatness of the pixel electrode, and the pixel electrode with the good flatness can ensure the uniformity of the film layer after the printing ink forms the film.
The OLED substrate provided by the embodiment of the application adopts the Organic silicon SOG (silicon Organic glass) to manufacture the flat layer, namely the flat layer comprises the Organic silicon flat layer, and the Organic silicon has the characteristic of low shrinkage-drying ratio and has a good flat effect, so that the flatness of a pixel electrode can be ensured, and the uniformity of a film layer after printing ink film forming is further ensured.
The organic silicon flat layer covers the display area 100 and the non-display area 200 during manufacturing, however, due to the poor compactness of the organic silicon material, external water and oxygen easily invade the display area 100 through the organic silicon flat layer, and affect the pixel electrode and the pixel in the display area 100, so that the working performance and the working reliability of the packaged OLED display panel may be affected.
In view of this, in the OLED substrate of the embodiment of the present application, during the manufacturing process, the dry etching process is adopted to remove the portion of the organic silicon planarization layer corresponding to the non-display area 200, so that the organic silicon planarization layer 5 is only disposed in the pixel area, and thus the organic silicon planarization layer 5 is isolated from the outside after the OLED display panel is packaged, thereby preventing the outside water and oxygen from entering the display area 100 through the organic silicon planarization layer. In order to ensure the isolation effect of the silicone planarization layer, the silicone planarization layer is usually removed by dry etching slightly larger than the non-display area 200, that is, the silicone planarization layer is slightly smaller than the display area 100.
The embodiment of the application provides a manufacturing method of an OLED substrate, as shown in fig. 2, the manufacturing method includes the following steps:
step S11: obtaining a substrate base plate;
the substrate base plate is a plate-shaped structure made of glass, organic materials and the like, and the plate-shaped structure is a support structure of the OLED base plate and is used for supporting other hierarchical structures in the OLED base plate.
Step S12: sequentially forming a thin film transistor, a metal wiring layer, a first passivation layer, a metal buffer layer and an organic silicon flat layer on a substrate;
fig. 3 is a schematic structural diagram of the OLED panel manufactured in step S12 in the non-display area 200, and as shown in fig. 3, the OLED panel includes a substrate 1, a thin film transistor 2, a metal routing layer 3, a first passivation layer 6, a metal buffer layer 4, and a silicone planarization layer 5, which are stacked in the non-display area 200.
In the above-mentioned structures, the first passivation layer 6 is formed on the outer side of the metal wiring layer 3 away from the substrate 1, so as to prevent the metal wiring layer 3 from being exposed to the outside and oxidized. The first passivation layer 6 may be made of an inorganic material such as silicon oxide SiO, silicon nitride SiN, or silicon oxynitride SiON.
If the silicone planarization layer 5 is directly disposed on the outer side of the first passivation layer 6 during the manufacturing process, the first passivation layer 6 is easily etched away during the dry etching process of the silicone planarization layer 5 in the non-display region 200, so that the metal wiring layer 3 is exposed and is easily oxidized.
Therefore, a metal buffer layer 4 is disposed between the organic silicon planarization layer 5 and the first passivation layer 6, and the metal buffer layer 4 may be copper Cu, molybdenum Mo, aluminum Al, indium tin oxide ITO, or molybdenum niobium alloy. The arrangement of the metal buffer layer 4 can avoid damaging the first passivation layer 6 when dry etching the organic silicon flat layer 5, thereby ensuring the protection of the metal wiring layer 3. In one possible embodiment, the metal buffer layer 4 is of a transparent structure, and the transparent structure is beneficial to the transparent display of the OLED display panel.
It should be noted that the above-mentioned hierarchical structure is an exemplary description, and the structure of the OLED substrate is not limited thereto, for example, the thin film transistor 2 may be selectively not arranged according to the actual OLED display panel, and for example, a hierarchical structure having other functions may be arranged between each layer according to the actual product, which is not described herein.
Step S13: dry etching to remove the part of the organic silicon flat layer in the non-display area;
fig. 4 is a schematic structural diagram of the OLED panel manufactured in step S13 in the non-display area 200, and as shown in fig. 4, the OLED panel includes a substrate 1, a thin film transistor 2, a metal routing layer 3, a first passivation layer 6, and a metal buffer layer 4, which are stacked in the non-display area 200.
Step S14: and etching to remove the metal buffer layer.
Fig. 5 is a schematic structural diagram of the OLED panel manufactured in step S14 in the non-display area 200, and as shown in fig. 5, the OLED panel includes a substrate 1, a thin film transistor 2, a metal routing layer 3, and a first passivation layer 6 in the non-display area 200.
In a possible embodiment, the metal buffer layer 4 may not be removed, that is, the method for manufacturing the OLED substrate only remains in steps S11 to S13.
The embodiment of the application provides an OLED substrate which is manufactured through the steps S11 to S14, the manufactured OLED substrate is provided with an organic silicon flat layer 5 in a display area 100, and the non-display area 200 comprises a substrate 1, a thin film transistor 2, a metal wiring layer 3 and a first passivation layer 6 which are arranged in a stacked mode.
The embodiment of the application provides another OLED substrate, which is manufactured through steps S11-S13, and the manufactured OLED substrate has an organic silicon flat layer 5 in a display area 100, and includes a substrate 1, a thin film transistor 2, a metal wiring layer 3, a first passivation layer 6 and a metal buffer layer 4 which are stacked in a non-display area 200.
The embodiment of the present application further provides a manufacturing method of an OLED substrate, as shown in fig. 6, the manufacturing method includes the following steps:
step S21: obtaining a substrate base plate;
step S22: sequentially forming a thin film transistor, a metal wiring layer, a first passivation layer and an organic silicon flat layer on a substrate;
here, reference may be made to the description in step S12, and the same contents are not described in detail. Fig. 7 is a schematic structural diagram of the OLED panel manufactured in step S22 in the non-display area 200, and as shown in fig. 7, the OLED panel includes a substrate 1, a thin film transistor 2, a metal routing layer 3, a first passivation layer 6, and a silicone planarization layer 5, which are stacked in the non-display area 200.
Step S23: dry etching to remove the part of the organic silicon flat layer in the non-display area;
during the dry etching of the silicone planarization layer 5, all or part of the first passivation layer 6 is removed. Fig. 8 is a schematic structural diagram of the OLED panel manufactured in step S23 in the non-display area 200, and as shown in fig. 8, the OLED panel includes the substrate 1, the thin film transistor 2, the metal routing layer 3, and a portion of the first passivation layer 6, which are stacked in the non-display area 200, that is, the first passivation layer 6 is partially removed in the process of dry etching the silicone planarization layer 5.
Step S24: and manufacturing a second passivation layer on the outer side of the metal wiring layer corresponding to the non-display area.
Fig. 9 is a schematic structural diagram of the OLED panel manufactured in step S24 in the non-display area 200, and as shown in fig. 9, the OLED panel includes a substrate 1, a thin film transistor 2, a metal routing layer 3, a portion of the first passivation layer 6, and a portion of the second passivation layer 7, which are stacked in the non-display area 200.
As can be seen from the description of step S12, if the silicone planarization layer 5 is directly disposed outside the first passivation layer 6 during the manufacturing process, the first passivation layer 6 is easily etched away during the dry etching process of the silicone planarization layer 5 in the non-display region 200, so that the metal wiring layer 3 is exposed and easily oxidized. In view of this, in the method for fabricating an OLED in this embodiment, after the silicone planarization layer 5 is dry etched, the second passivation layer 7 is fabricated, and the exposed metal wiring layer 3 is covered by the second passivation layer 7, so as to prevent the metal wiring layer 3 from being oxidized due to the fact that the first passivation layer 6 is removed and exposed to the outside. The second passivation layer 7 may be made of an inorganic material such as silicon oxide SiO, silicon nitride SiN, or silicon oxynitride SiON.
The embodiment of the application provides an OLED substrate which is manufactured through the steps S21-S24, the manufactured OLED substrate is provided with an organic silicon flat layer 5 in a display area 100, and the non-display area 200 comprises a substrate 1, a metal wiring layer 3, a part of a first passivation layer 6 and a second passivation layer 7 which are arranged in a stacked mode.
In the above embodiment, in order to avoid that external water and oxygen enter the display region through the silicone flat layer 5 to affect the reliability of the OLED display panel, the silicone flat layer 5 is removed by dry etching, but the embodiment of the present invention is not limited thereto, and in a possible embodiment, the silicone flat layer 5 is not dry etched, but a third passivation layer 8 is disposed on the outer side of the silicone flat layer 5, and the third passivation layer 8 is wrapped on the outer side of the silicone flat layer 5, so that the film forming effective area of the third passivation layer 8 is larger than the film forming effective area of the silicone flat layer 5, thereby preventing external water and oxygen from invading the display region 100 through the silicone flat layer 5, and ensuring the operational reliability of the OLED display panel. The third passivation layer 8 may be made of an inorganic material such as silicon oxide SiO, silicon nitride SiN, or silicon oxynitride SiON.
The OLED substrate manufactured by the above method includes the organic silicon flat layer 5 in the display area 100, fig. 10 is a schematic structural view of the OLED substrate manufactured by the above method in the non-display area 200, as shown in fig. 10, the OLED substrate includes the substrate 1, the thin film transistor 2, the metal routing layer 3, the first passivation layer 6, the organic silicon flat layer 5, and the third passivation layer 8 stacked in the non-display area 200, the third passivation layer 8 includes a first covering portion and a second covering portion, the first covering portion extends on an outer side surface of the flat layer away from the substrate 1, the second covering portion is connected with the first covering portion and extends from an outer peripheral end portion of the flat layer, and an extending distance of the second covering portion exceeds the organic silicon flat layer 5, so as to wrap the organic silicon flat layer 5.
According to the OLED substrate and the OLED substrate manufacturing method, the OLED substrate can be manufactured into the flat layer by adopting the organic silicon, the flatness of the flat layer is guaranteed, a good flat foundation is provided for ink-jet printing, and the influence of the organic silicon flat layer on the reliability of the OLED display panel is avoided.
The embodiment of the application also provides an OLED display panel, which comprises an OLED substrate, and the OLED display panel is manufactured based on the OLED substrate through an ink-jet printing technology.
The outer side of the OLED substrate is also provided with a pixel electrode and a pixel defining layer in the process of manufacturing the OLED display panel, the pixel defining layer is manufactured into a pixel area corresponding to the pixel electrode through deposition, exposure and development, the pixel electrode is positioned at the bottom of the pixel area, and the inkjet printer prints organic ink into the pixel area.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Furthermore, the technical features mentioned in the different embodiments of the present invention described above may be combined with each other as long as they do not conflict with each other.
So far, the technical solutions of the present invention have been described in connection with the preferred embodiments shown in the drawings, but it is easily understood by those skilled in the art that the scope of the present invention is obviously not limited to these specific embodiments. Equivalent changes or substitutions of related technical features can be made by those skilled in the art without departing from the principle of the invention, and the technical scheme after the changes or substitutions can fall into the protection scope of the invention.

Claims (10)

1. The OLED substrate is characterized by comprising a substrate base plate and a flat layer arranged on the substrate base plate, wherein the flat layer is made of organic silicon; the OLED substrate is provided with a pixel electrode and a pixel defining layer, the pixel electrode and the pixel defining layer are arranged on one side, away from the substrate, of the flat layer, and the pixel defining layer is provided with a pixel area containing printing ink.
2. The OLED substrate of claim 1, wherein: the OLED substrate comprises a display area and a non-display area, and the flat layer is arranged in the display area.
3. The OLED substrate of claim 2, wherein: the OLED substrate comprises the substrate, a metal wiring layer, a first passivation layer and a metal buffer layer which are arranged in a stacking mode in the non-display area.
4. The OLED substrate of claim 3, wherein: the metal buffer layer is a transparent metal layer.
5. The OLED substrate of claim 2, wherein: the OLED substrate comprises the substrate, a metal wiring layer, a first passivation layer and a second passivation layer which are arranged in a stacked mode in the non-display area.
6. The OLED substrate of claim 1, wherein: the OLED substrate further comprises a third passivation layer, and the third passivation layer wraps the outer side of the flat layer.
7. The OLED substrate of claim 6, wherein: the third passivation layer comprises a first covering part and a second covering part, the first covering part extends on the outer side face, away from the substrate base plate, of the flat layer, the second covering part is connected with the first covering part and extends along the outer peripheral end part of the flat layer, and the extending distance of the second covering part exceeds that of the flat layer.
8. The OLED substrate comprises a display area and a non-display area arranged on the outer side of the display area;
the method is characterized in that:
obtaining a substrate base plate;
sequentially forming a metal wiring layer, a first passivation layer, a metal buffer layer and an organic silicon flat layer on the substrate base plate;
dry etching to remove the part of the organic silicon flat layer, which is positioned in the non-display area;
and etching to remove the metal buffer layer.
9. The OLED substrate comprises a display area and a non-display area arranged on the outer side of the display area;
the method is characterized in that:
obtaining a substrate base plate;
sequentially forming a metal wiring layer, a first passivation layer and an organic silicon flat layer on the substrate base plate;
dry etching to remove the part of the organic silicon flat layer, which is positioned in the non-display area;
and manufacturing a second passivation layer on the outer side of the metal wiring layer corresponding to the non-display area.
10. A display panel, comprising: the OLED substrate of any one of claims 1-7.
CN202011182871.1A 2020-10-29 2020-10-29 OLED substrate, manufacturing method and display panel Pending CN112289815A (en)

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Citations (5)

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