CN112289736A - 用于晶圆背面清洗的固定装置 - Google Patents
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- 238000004140 cleaning Methods 0.000 title claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 239000000243 solution Substances 0.000 description 17
- 238000005530 etching Methods 0.000 description 15
- 238000001039 wet etching Methods 0.000 description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- 238000007599 discharging Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000003814 drug Substances 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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Abstract
本申请公开了一种用于晶圆背面清洗的固定装置,涉及半导体制造领域。该用于晶圆背面清洗的固定装置包括若干个支撑脚和固定夹盘;所述支撑脚固定于所述固定夹盘的顶部,所述若干个支撑脚用于支撑晶圆;所述支撑脚上设置有若干条沟槽;沟槽位于所述晶圆与所述支撑脚的接触区域;所述沟槽环绕所述支撑脚;解决了目前对晶圆背面清洗后正面die容易受到影响的问题;达到了保障背面清洗后,晶圆正面不受影响的效果。
Description
技术领域
本申请涉及半导体制造领域,具体涉及一种用于晶圆背面清洗的固定装置。
背景技术
在半导体器件的制造、生产过程中,由于器件的自身结构要求或对器件封装性能的要求,需要对晶圆背面进行减薄。目前,晶圆背面减薄工艺包括研磨、CMP(chemicalmechanical polishing,化学机械抛光)、湿法刻蚀等。
湿法刻蚀工艺的主要作用为清洗减薄面和去除减薄面损伤层。在对晶圆进行背面清洗时,通常采用氢氟酸(HF)、硝酸(HNO3)、硫酸(H2SO4)等强酸混合溶液作为腐蚀溶液,实现清洗晶圆背面/减少晶圆背面厚度的目的。
然而,采用混合溶液的腐蚀溶液往往反应速度快,且流动性差,在使用时容易残留在晶圆表面。当腐蚀溶液残留在晶圆正面时,会对晶圆正面的芯片(die)造成不良影响。
发明内容
为了解决相关技术中的问题,本申请提供了一种用于晶圆背面清洗的固定装置。
一方面,本申请实施例提供了一种用于晶圆背面清洗的固定装置,包括若干个支撑脚和固定夹盘;
支撑脚固定于固定夹盘的顶部,若干个支撑脚用于支撑晶圆;
支撑脚上设置有若干条沟槽;沟槽位于晶圆与支撑脚的接触区域;
沟槽环绕支撑脚。
可选的,若干个支撑脚均匀分布在固定夹盘的顶部。
可选的,每个支撑脚上设置有若干条沟槽。
可选的,沟槽与固定夹盘的顶部之间的夹角为-90°至90°。
可选的,沟槽的宽度为0-5mm。
可选的,沟槽的深度为0-2mm。
可选的,单个支撑脚上,沟槽的数量至少为1条。
可选的,当单个支撑脚上沟槽的数量至少为2条时,任意相邻的两条沟槽之间的距离为0-5mm。
本申请技术方案,至少包括如下优点:
通过在支撑脚上与晶圆接触的区域设置沟槽,在对晶圆的背面进行湿法刻蚀时,利用支撑脚上的沟槽辅助排出晶圆背面流出的腐蚀溶液,避免腐蚀溶液流至晶圆正面,解决了目前对晶圆背面清洗后正面die容易受到影响的问题;达到了保障背面清洗后,晶圆正面不受影响的效果。
附图说明
为了更清楚地说明本申请具体实施方式或现有技术中的技术方案,下面将对具体实施方式或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图是本申请的一些实施方式,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1是本申请一实施例提供的晶圆背面清洗的固定装置固定晶圆时的示意图;
图2是本申请一实施例提供的晶圆背面清洗的固定装置固定晶圆时的俯视图;
图3是本申请一实施例提供的晶圆背面清洗的固定装置在使用时的侧视图。
具体实施方式
下面将结合附图,对本申请中的技术方案进行清楚、完整的描述,显然,所描述的实施例是本申请的一部分实施例,而不是全部的实施例。基于本申请中的实施例,本领域普通技术人员在不做出创造性劳动的前提下所获得的所有其它实施例,都属于本申请保护的范围。
在本申请的描述中,需要说明的是,术语“中心”、“上”、“下”、“左”、“右”、“竖直”、“水平”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本申请和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本申请的限制。此外,术语“第一”、“第二”、“第三”仅用于描述目的,而不能理解为指示或暗示相对重要性。
在本申请的描述中,需要说明的是,除非另有明确的规定和限定,术语“安装”、“相连”、“连接”应做广义理解,例如,可以是固定连接,也可以是可拆卸连接,或一体地连接;可以是机械连接,也可以是电气连接;可以是直接相连,也可以通过中间媒介间接相连,还可以是两个元件内部的连通,可以是无线连接,也可以是有线连接。对于本领域的普通技术人员而言,可以具体情况理解上述术语在本申请中的具体含义。
此外,下面所描述的本申请不同实施方式中所涉及的技术特征只要彼此之间未构成冲突就可以相互结合。
本申请实施例提供了一种晶圆背面清洗的固定装置,该装置包括若干个支撑脚和固定夹盘。
如图1所示,支撑脚11固定于固定夹盘12的顶部。若干个支撑脚11用于支撑晶圆。
支撑脚11可以从固定夹盘12的顶部拆卸,方便更换支撑脚。
当晶圆13的背面需要进行湿法刻蚀时,将晶圆13放置在支撑脚11之间,支撑脚11于晶圆13的边缘接触,支撑脚11撑住晶圆13,令晶圆13的背面与水平面平行。
支撑脚11上设置有若干条沟槽14,沟槽用于将晶圆背面在湿法刻蚀时,从晶圆背面流出的腐蚀药液辅助排出,避免腐蚀药液流至晶圆的正面。
沟槽位于晶圆与支撑脚的接触区域。
可选的,每个支撑脚上设置有若干条沟槽,或,部分支撑脚上设置有若干条沟槽。
沟槽环绕支撑脚,即每条沟槽绕单个支撑脚一圈。
为了令支撑脚固定的晶圆受力均匀,若干个支撑脚11均匀分布在固定夹盘13的顶部,如图2所示。支撑脚的数量根据实际情况确定,图2中以支撑脚的数量为6个为例,对支撑脚的数量不作限定。
为了更好地实现辅助排液的效果,每个支撑脚上设置有若干条沟槽。
单个支撑脚上,沟槽的数量至少为1条。可选的,当每个支撑脚上均设置有沟槽时,每个支撑脚上设置的沟槽数量相等。
沟槽在支撑脚上的设置情况根据实际情况确定。
如图3所示,当晶圆进行背面湿法腐蚀时,晶圆13固定在若干个支撑脚11之间,支撑脚11上设置有若干条沟槽14,药液管道15喷淋腐蚀溶液,当晶圆13随着固定夹盘12一同旋转时,腐蚀溶液的流动路径如图3中的箭头所示,腐蚀溶液会从沟槽14处排出,避免腐蚀溶液流到晶圆13正面,影响晶圆正面的die。
可选的,当单个支撑脚上的沟槽数量为至少2条时,任意相邻的两条沟槽之间的距离为0mm-5mm。
当单个支撑脚上的沟槽数量为至少2条时,单个支撑脚上的沟槽分布区域包围晶圆与支撑脚的接触区域。
可选的,每个沟槽的宽度为0mm-5mm。
可选的,每个沟槽的深度为0mm-2mm。
可选的,每个沟槽与固定夹盘的顶部之间的夹角为-90°至90°;固定夹盘的顶部与水平面平行。
需要说明的是,当存在多条沟槽时,沟槽与固定夹盘的顶部之间的夹角可以相同也可不相同;沟槽的宽度、深度可以相同也可以不相同。
在晶圆进行背面刻蚀工艺时,晶圆的转速和腐蚀溶液的流速根据实际情况确定,本申请实施例对此不作限定。
在一个例子中,采用没有沟槽的支撑脚固定晶圆,在对晶圆背面进行湿法刻蚀之后,晶圆正面有腐蚀溶液残留,晶圆正面上大约30-40个die被影响;而采用本申请实施例提供的用于晶圆背面清洗的固定装置,在对晶圆背面进行湿法刻蚀之后,晶圆正面没有腐蚀溶液残留,晶圆正面的die没有被影响。
综上所述,本申请实施例提供的用于晶圆背面清洗的固定装置,在支撑脚上与晶圆接触的区域设置沟槽,在对晶圆的背面进行湿法刻蚀时,利用支撑脚上的沟槽辅助排出晶圆背面流出的腐蚀溶液,避免腐蚀溶液流至晶圆正面,解决了目前对晶圆背面清洗后正面die容易受到影响的问题;达到了保障背面清洗后,晶圆正面不受影响的效果。
此外,该用于晶圆背面清洗的固定装置,操作简单,更换容易,有助于实现设备量产化。
显然,上述实施例仅仅是为清楚地说明所作的举例,而并非对实施方式的限定。对于所属领域的普通技术人员来说,在上述说明的基础上还可以做出其它不同形式的变化或变动。这里无需也无法对所有的实施方式予以穷举。而由此所引伸出的显而易见的变化或变动仍处于本申请创造的保护范围之中。
Claims (8)
1.一种用于晶圆背面清洗的固定装置,其特征在于,包括若干个支撑脚和固定夹盘;
所述支撑脚固定于所述固定夹盘的顶部,所述若干个支撑脚用于支撑晶圆;
所述支撑脚上设置有若干条沟槽;沟槽位于所述晶圆与所述支撑脚的接触区域;
所述沟槽环绕所述支撑脚。
2.根据权利要求1所述的用于晶圆背面清洗的固定装置,其特征在于,所述若干个支撑脚均匀分布在所述固定夹盘的顶部。
3.根据权利要求1所述的用于晶圆背面清洗的固定装置,其特征在于,每个支撑脚上设置有若干条沟槽。
4.根据权利要求1或3所述的用于晶圆背面清洗的固定装置,其特征在于,所述沟槽与所述固定夹盘的顶部之间的夹角为-90°至90°。
5.根据权利要求1所述的用于晶圆背面清洗的固定装置,其特征在于,所述沟槽的宽度为0-5mm。
6.根据权利要求1所述的用于晶圆背面清洗的固定装置,其特征在于,所述沟槽的深度为0-2mm。
7.根据权利要求1所述的用于晶圆背面清洗的固定装置,其特征在于,单个支撑脚上,所述沟槽的数量至少为1条。
8.根据权利要求1所述的用于晶圆背面清洗的固定装置,其特征在于,当单个支撑脚上沟槽的数量至少为2条时,任意相邻的两条沟槽之间的距离为0-5mm。
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CN112967995A (zh) * | 2021-02-01 | 2021-06-15 | 泉芯集成电路制造(济南)有限公司 | 一种芯片夹具、芯片清洗装置及芯片刻蚀装置 |
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JP2010062403A (ja) * | 2008-09-05 | 2010-03-18 | Oki Semiconductor Co Ltd | 半導体装置の製造装置 |
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JP2010062403A (ja) * | 2008-09-05 | 2010-03-18 | Oki Semiconductor Co Ltd | 半導体装置の製造装置 |
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CN107845590A (zh) * | 2017-11-02 | 2018-03-27 | 德淮半导体有限公司 | 清洗装置 |
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CN112967995A (zh) * | 2021-02-01 | 2021-06-15 | 泉芯集成电路制造(济南)有限公司 | 一种芯片夹具、芯片清洗装置及芯片刻蚀装置 |
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