CN112285816A - Preparation method of distributed feedback semiconductor laser grating and chip - Google Patents
Preparation method of distributed feedback semiconductor laser grating and chip Download PDFInfo
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- CN112285816A CN112285816A CN202011161096.1A CN202011161096A CN112285816A CN 112285816 A CN112285816 A CN 112285816A CN 202011161096 A CN202011161096 A CN 202011161096A CN 112285816 A CN112285816 A CN 112285816A
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Abstract
The invention relates to a manufacturing method of a DFB grating, in particular to a manufacturing method of a distributed feedback semiconductor laser grating and a chip; the preparation method of the grating comprises the steps of growing an epitaxial wafer structure with three layers of grating materials, corroding the epitaxial wafer structure along the V-groove direction by using corrosive liquid, and testing the height from the bottom to the top by using a scanning electron microscope; according to the duty ratio of the grating, the thickness of the three layers of materials is adjusted by utilizing a similar trapezoid principle under the condition that the thickness of the epitaxial structure is not changed, so that the purpose of controlling the duty ratio of the grating is achieved, and finally the grating with the required duty ratio is obtained through secondary epitaxy. The method for controlling the duty ratio of the grating can accurately control the duty ratio of the grating, has good process repeatability, and can be suitable for large-scale production.
Description
Technical Field
The invention relates to a manufacturing method of a DFB grating, in particular to a manufacturing method of a distributed feedback semiconductor laser grating and a chip.
Background
Semiconductor lasers are the main light sources of optical communication networks and include three types, namely, fabry-perot laser (FP laser) distributed feedback laser (DFB) and Vertical Cavity Surface Emitting Laser (VCSEL). The DFB laser constructs Bragg grating in the semiconductor, realizes single longitudinal mode selection by using light distribution feedback, and has the characteristics of high speed, narrow line width and dynamic single-mode working. The period of the gratings in the prior art for fabricating DFB chips is typically 200 nm and 240 nm, while the duty cycle is typically 25% and 50%. The grating duty cycle affects the bandwidth of each wavelength of its reflectance spectrum, and the spacing between adjacent channels is increasing, affecting its linewidth in the DFB.
The duty ratios of the gratings of the semiconductor lasers with different wavelengths are different, a photoetching plate is correspondingly manufactured according to each duty ratio in a common method, adhesive films with different duty ratios are manufactured, and the gratings with different duty ratios are manufactured through material corrosion; thereby obtaining the adhesive film with corresponding duty ratio. However, when a glue film of a submicron grating with a small duty ratio is manufactured, the width of the glue film is narrow, the requirement on the resolution of the photoresist is high, and the width of the manufactured grating glue film is not uniform, so that the yield of products is influenced.
Disclosure of Invention
Therefore, in view of the above, an object of the present invention is to provide a method for manufacturing gratings with different duty ratios by using the same photolithography mask, so as to improve the utilization rate of the photolithography mask and reduce the production cost.
In the technical scheme of the invention, the invention provides a preparation method of a distributed feedback semiconductor laser grating and a chip, which are used for solving the technical problem.
In a first aspect of the present invention, there is provided a method of fabricating a distributed feedback semiconductor laser grating, the method comprising:
s1, growing an epitaxial wafer structure with three layers of grating materials by using Metal Organic Chemical Vapor Deposition (MOCVD); growing a silicon nitride film on the epitaxial wafer;
s2, using the photoetching plate as a mask layer to cover part of the silicon nitride film, and exposing the silicon nitride film under a photoetching machine to manufacture a photoetching film with a certain duty ratio;
s3, cooling the corrosive liquid, corroding the epitaxial wafer by utilizing the termination effect of the low-temperature condition on the lateral corrosion, and measuring the height of the grid bars and the width of the tops of the grid bars under different corrosion time by utilizing a scanning electron microscope;
s4, until a plurality of V-groove-shaped structures are corroded, forming a plurality of grid bars, recording corrosion time, ending corrosion, and removing the silicon nitride film;
s5, forming a V-shaped groove according to the etching load effect, determining an included angle formed when the corrosion of the three layers of grating materials in the longitudinal direction is stopped, and determining the corrosion depth by controlling the opening width of the pattern;
s6, setting the depth h of the V groove in the step S5 as the total thickness of the grating layer, and determining the thickness d2 of the second layer of grating material according to the coupling coefficient; calculating the thickness d1 of the first layer of grating material and the thickness d3 of the third layer of grating material according to the required grating duty ratio;
s7, regenerating an epitaxial wafer according to the calculated thickness of each layer of grating material;
and S8, growing a silicon nitride film with the same thickness as that in the step S1 on the regenerated epitaxial wafer, thereby manufacturing the grating with the current required duty ratio.
Furthermore, the three layers of grating materials are two layers of P-InP materials, and a layer of P-InGaAsP material is sandwiched between the two layers of P-InP materials.
Further, the opening width is not changed according to the etching load effect under the low temperature condition by the etching solution. Therefore, the angle theta of the V groove is a fixed value and is about 55 degrees, so as long as the opening width d of the pattern is the same, the depth h of each etching is a fixed value; the calculation formula is
Further, in step S6, the thicknesses of the first layer of grating material and the third layer of grating material are calculated according to the following formulas:
d1＝h-d2-d3
wherein d is3Represents the thickness of the third layer of grating material; g represents the required duty cycle, i.e. the reset duty cycle; p represents the period of the grating; d1Representing the thickness of the first layer of grating material; h represents the total thickness of the three layers of grating materials, namely the etching depth h corresponding to the final etching time in the step S5, namely the height of the grating bars; d2Indicating the thickness of the second layer of grating material.
Further, a material etch stop layer is grown before the epitaxial wafer is re-grown in step S8.
In a second aspect of the present invention, the present invention provides a method for manufacturing a distributed feedback semiconductor laser chip, the method comprising:
s1, growing an epitaxial wafer structure with three layers of grating materials by using Metal Organic Chemical Vapor Deposition (MOCVD); growing a silicon nitride film on the epitaxial wafer;
s2, using the photoetching plate as a mask layer to cover part of the silicon nitride film, and exposing the silicon nitride film under a photoetching machine to manufacture a photoetching film with a certain duty ratio;
s3, cooling the corrosive liquid, corroding the epitaxial wafer by utilizing the termination effect of the low-temperature condition on the lateral corrosion, and measuring the height of the grid bars and the width of the tops of the grid bars under different corrosion time by utilizing a scanning electron microscope;
s4, until a plurality of V-groove-shaped structures are corroded, forming a plurality of grid bars, recording corrosion time, ending corrosion, and removing the silicon nitride film;
s5, forming a V-shaped groove according to the etching load effect, determining an included angle formed when the corrosion of the three layers of grating materials in the longitudinal direction is stopped, and determining the corrosion depth by controlling the opening width of the pattern;
s6, setting the depth h of the V groove according to S5 as the total thickness of the grating layer, and determining the thickness d2 of the second layer of grating material according to the coupling coefficient; calculating the thickness d1 of the first layer of grating material and the thickness d3 of the third layer of grating material;
s7, regenerating an epitaxial wafer according to the calculated thickness of each layer of grating material;
s8, growing a silicon nitride film with the same thickness as that of the step S1 on the regenerated epitaxial wafer; thereby producing the grating with the current required duty ratio;
and S9, after finishing the grating with the current required duty ratio, continuously growing a P-InP layer and a Zn-doped P-InGaAs ohmic contact layer in the direction of the grating layer to finish the epitaxial process of the DFB laser.
The invention has the beneficial effects that:
the invention discloses a distributed feedback semiconductor laser grating and a preparation method of a chip. The epitaxial structure of the grating consists of 3 layers of materials, the material system is firstly corroded by corrosive liquid along the V-groove direction until the bottom is pinched off, and the height from the bottom to the top is tested by a scanning electron microscope; according to the duty ratio of the grating, the thicknesses of the first layer of grating material and the second layer of grating material are adjusted by utilizing a similar trapezoid principle under the condition that the thickness of the epitaxial structure is not changed, so that the purpose of controlling the duty ratio of the grating is achieved, and finally the grating with the required duty ratio is obtained through secondary epitaxy. The method for controlling the duty ratio of the grating can accurately control the duty ratio of the grating, has good process repeatability, and can be suitable for large-scale production.
Drawings
FIG. 1 is a diagram of a three-layer grating material used in the present invention;
FIG. 2 is a flow chart of a method for fabricating a distributed feedback semiconductor laser grating in accordance with the present invention;
FIG. 3 is a view of an epitaxial structure coated with a photoresist according to the present invention;
FIG. 4 is a structural diagram of an etched silicon nitride mask pattern according to the present invention;
FIG. 5 is a view showing a structure of a V-groove formed in the present invention;
FIG. 6 is a diagram of a grating structure for reproducing the duty ratio required at present according to the present invention;
fig. 7 is a flow chart of a method for fabricating a distributed feedback semiconductor laser chip according to the present invention;
in the figure, 101, a first layer of grating material, 102, a second layer of grating material, 103, a third layer of grating material, 104, a silicon nitride film, 105 and a photoresist film.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Taking the most common grating material structure of a distributed feedback semiconductor laser as an example, as shown in fig. 1, the grating structure is divided into 3 layers, and a first layer of grating material 101, a second layer of grating material 102 and a third layer of grating material 103 are sequentially arranged from top to bottom, and can be indium phosphide, indium gallium arsenic phosphide and indium phosphide; the invention aims to prepare the distributed feedback semiconductor laser grating and the chip which accord with the required grating duty ratio on the basis of the grating structure.
As shown in fig. 2, a specific method for manufacturing a distributed feedback semiconductor laser grating includes the following steps:
s1, growing an epitaxial wafer structure with three layers of grating materials by using Metal Organic Chemical Vapor Deposition (MOCVD); growing a silicon nitride film on the epitaxial wafer;
in an embodiment, the epitaxial wafer structure with three layers of grating materials may refer to fig. 1, where the first layer of grating material 101, the second layer of grating material 102, and the third layer of grating material 103 may be indium phosphide, indium gallium arsenic phosphide, indium phosphide; growing a silicon nitride film 104 on the epitaxial wafer as shown in FIG. 3; the silicon nitride film can coat a first layer of grating material; the specific generation method can refer to the prior art, and the invention is not limited to the method.
S2, using the photoetching plate as a mask layer to cover part of the silicon nitride film, and exposing the silicon nitride film under a photoetching machine to manufacture a photoetching film with a certain duty ratio;
in this embodiment, the duty ratio adopted in step S2 is a normal duty ratio, for example, 50%, 30%, etc., and for example, a reticle with a pattern duty ratio of 50% is used to expose the photoresist film, as shown in fig. 3 and 4, so as to manufacture a photoresist film with a duty ratio of 50%.
S3, cooling the corrosive liquid, corroding the epitaxial wafer by utilizing the termination effect of the low-temperature condition on the lateral corrosion, and measuring the height of the grid bars and the width of the tops of the grid bars under different corrosion time by utilizing a scanning electron microscope;
in this embodiment, in order to control the corrosion rate of the material conveniently, saturated bromine water and hydrobromic acid may be used in this embodiment, the etching solution is configured with water according to a ratio of 1:50:500, when the temperature of the etching solution is reduced to 0 ℃, the lateral etching is substantially terminated under a low temperature condition, at this time, when the epitaxial wafer is etched, the epitaxial wafer is mainly etched in the longitudinal direction, and in this process, the heights of the gate bars and the widths of the top portions of the gate bars at different etching times are measured by using a scanning electron microscope.
S4, until a plurality of V-groove-shaped structures are corroded, forming a plurality of grid bars, recording corrosion time, ending corrosion, and removing the silicon nitride film;
before etching the grating material structure, the present embodiment further performs ICP etching on the silicon nitride film to generate a mask pattern, so as to form the structure shown in fig. 4.
In the step S4, in this embodiment, the material is etched for 30S, 40S, and 50S until the cross section is observed by a scanning electron microscope to form a V-groove shape.
S5, forming a V-shaped groove according to the etching load effect, determining an included angle formed when the corrosion of the three layers of grating materials in the longitudinal direction is stopped, and determining the corrosion depth by controlling the opening width of the pattern;
according to the etching load effect, after the V-shaped groove is formed, the etching of the material in the longitudinal direction is stopped and the included angle θ formed is a constant value, about 55 °, as shown in fig. 5, so that the depth h of each etching is a constant value as long as the opening width d of the pattern is the same. The calculation formula is
S6, setting the depth h of the V groove in the step S5 as the total thickness of the grating layer, and determining the thickness d2 of the second layer of grating material according to the coupling coefficient; calculating the thickness d1 of the first layer of grating material and the thickness d3 of the third layer of grating material according to the required grating duty ratio;
in one embodiment, the total thickness of the epitaxial wafer is set to be consistent with the depth of the V-groove corresponding to the final etching time in step S5, i.e., the height h of the grating bar, at this time, the currently required duty ratio may be reset, and the thicknesses of the first layer of grating material and the third layer of grating material are calculated on the premise that the thickness of the second layer of grating material is fixed according to the included angle of the V-groove and the width of the opening;
the thickness of the first layer of grating material and the third layer of grating material is calculated according to the following formula:
d1＝h-d2-d3
wherein d is3Represents the thickness of the third layer of grating material; g represents the reset duty cycle; p represents the period of the grating; theta represents the included angle of the V groove; d1Representing the thickness of the first layer of grating material; h represents the total thickness of the three layers of grating materials, namely the depth of the V groove corresponding to the final etching time in the step S5; d2Indicating the thickness of the second layer of grating material.
The embodiment utilizes the principle of similar patterns to obtain the relative position of the second layer of grating material in the whole grating layer (the structure formed by the layers 101, 102 and 103), and also determines the thickness of each layer of material.
It is understood that the thickness of the second layer of grating material in the present invention is related to the material of the second layer of grating material, and can be determined according to the coupling coefficient, and those skilled in the art can calculate the thickness by referring to the prior art.
S7, regenerating an epitaxial wafer according to the calculated thickness of each layer of grating material;
and (4) regenerating the epitaxial wafer with the thickness according to the thickness of each layer of material calculated in the step (S6), and simultaneously, growing a material corrosion stop layer to protect other layers from corrosion before regenerating the epitaxial wafer.
Because the thickness of each layer of the whole grating material is determined, and the thickness of the second layer of grating material is unchanged, under the condition that the depth of the V-groove is certain, the thickness of the third layer of grating material is determined according to the reset duty ratio and the grating period, and at the moment, the first layer of grating material or/and the second layer of grating material need to be regenerated; at the moment, the epitaxial layer can grow grating material layers with any grating duty ratio and even different grating periods.
It is understood that the epitaxial layer in the present invention mainly includes the grating material layer, but in the actual manufacturing process, the epitaxial layer also includes structures such as a substrate layer, a buffer layer, etc., and since these structures are not the main point of the present invention, the present invention does not provide a detailed description thereof.
And S8, growing a silicon nitride film with the same thickness as that in the step S1 on the regenerated epitaxial wafer, thereby manufacturing the grating with the current required duty ratio.
Referring to fig. 6, the thickness of the grating material structure at this time is completely different from that of fig. 1, and gratings with different duty ratios are realized by adjusting the thicknesses of the first layer of grating material and the third layer of grating material.
It is understood that, in the step S8, the partial techniques such as step S2-step S4 may be referred to for manufacturing the raster with the currently required duty ratio, and the conventional techniques may also be used, which is not limited in the present invention.
As shown in fig. 7, in a second aspect of the present invention, the present invention provides a method of manufacturing a distributed feedback semiconductor laser chip, the method comprising:
s1, growing an epitaxial wafer structure with three layers of grating materials by using Metal Organic Chemical Vapor Deposition (MOCVD); growing a silicon nitride film on the epitaxial wafer;
s2, using the photoetching plate as a mask layer to cover part of the silicon nitride film, and exposing the silicon nitride film under a photoetching machine to manufacture a photoetching film with a certain duty ratio;
s3, cooling the corrosive liquid, corroding the epitaxial wafer by utilizing the termination effect of the low-temperature condition on the lateral corrosion, and measuring the height of the grid bars and the width of the tops of the grid bars under different corrosion time by utilizing a scanning electron microscope;
s4, until a plurality of V-groove-shaped structures are corroded, forming a plurality of grid bars, recording corrosion time, ending corrosion, and removing the silicon nitride film;
s5, forming a V-shaped groove according to the etching load effect, determining an included angle formed when the corrosion of the three layers of grating materials in the longitudinal direction is stopped, and determining the corrosion depth by controlling the opening width of the pattern;
s6, setting the depth h of the V groove according to S5 as the total thickness of the grating layer, and determining the thickness d2 of the second layer of grating material according to the coupling coefficient; calculating the thickness d1 of the first layer of grating material and the thickness d3 of the third layer of grating material;
s7, regenerating an epitaxial wafer according to the calculated thickness of each layer of grating material;
s8, growing a silicon nitride film with the same thickness as that of the step S1 on the regenerated epitaxial wafer; thereby producing the grating with the current required duty ratio;
and S9, after finishing the grating with the current required duty ratio, continuously growing a P-InP layer and a Zn-doped P-InGaAs ohmic contact layer in the direction of the grating layer to finish the epitaxial process of the DFB laser.
The distributed feedback semiconductor laser grating is communicated with the preparation process of the distributed feedback semiconductor laser chip, the technical characteristics corresponding to the preparation of the chip can refer to the technical characteristics of the grating preparation part, and the invention does not detail the grating preparation part.
In the description of the present invention, it is to be understood that the terms "coaxial", "bottom", "one end", "top", "middle", "other end", "upper", "one side", "top", "inner", "outer", "front", "center", "both ends", and the like, indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, are not to be construed as limiting the present invention.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "disposed," "connected," "fixed," "rotated," and the like are to be construed broadly, e.g., as meaning fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; the terms may be directly connected or indirectly connected through an intermediate, and may be communication between two elements or interaction relationship between two elements, unless otherwise specifically limited, and the specific meaning of the terms in the present invention will be understood by those skilled in the art according to specific situations.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (6)
1. A method for preparing a distributed feedback semiconductor laser grating is characterized by comprising the following steps:
s1, growing an epitaxial wafer structure with three layers of grating materials by using Metal Organic Chemical Vapor Deposition (MOCVD); growing a silicon nitride film on the epitaxial wafer;
s2, using the photoetching plate as a mask layer to cover part of the silicon nitride film, and exposing the silicon nitride film under a photoetching machine to manufacture a photoetching film with a certain duty ratio;
s3, cooling the corrosive liquid, corroding the epitaxial wafer by utilizing the termination effect of the low-temperature condition on the lateral corrosion, and measuring the height of the grid bars and the width of the tops of the grid bars under different corrosion time by utilizing a scanning electron microscope;
s4, until a plurality of V-groove-shaped structures are corroded, forming a plurality of grid bars, recording corrosion time, ending corrosion, and removing the silicon nitride film;
s5, forming a V-shaped groove according to the etching load effect, determining an included angle formed when the corrosion of the three layers of grating materials in the longitudinal direction is stopped, and determining the corrosion depth by controlling the opening width of the pattern;
s6, setting the depth h of the V groove in the step S5 as the total thickness of the grating layer, and determining the thickness d2 of the second layer of grating material according to the coupling coefficient; calculating the thickness d1 of the first layer of grating material and the thickness d3 of the third layer of grating material according to the required grating duty ratio;
s7, regenerating an epitaxial wafer according to the calculated thickness of each layer of grating material;
and S8, growing a silicon nitride film with the same thickness as that in the step S1 on the regenerated epitaxial wafer, thereby manufacturing the grating with the current required duty ratio.
2. A method of fabricating a distributed feedback semiconductor laser grating as claimed in claim 1 wherein said three layers of grating material are two layers of P-InP material with a layer of P-InGaAsP material sandwiched therebetween.
3. A method of fabricating a distributed feedback semiconductor laser grating as claimed in claim 1 wherein said etch depth is calculated as:
wherein h represents the depth of the etch; d represents the opening width of the figure; θ represents the angle formed when the corrosion of the material in the longitudinal direction stagnates.
4. The method according to claim 1, wherein in step S6, the thicknesses of the first layer of grating material and the third layer of grating material are calculated according to the following formulas:
calculating to obtain the thickness d3 of the third layer of grating material and the thickness d1 of the first layer of grating material according to the included angle theta of the V groove, the required grating duty ratio g and the period P of the grating; the calculation formula of the thickness of the third layer of grating material is as follows:
d1＝h-d2-d3。
5. a method for fabricating a distributed feedback semiconductor laser grating as claimed in claim 1 wherein a material etch stop layer is grown prior to regenerating the epitaxial wafer in step S8.
6. A method for preparing a distributed feedback semiconductor laser chip is characterized by comprising the following steps:
s1, growing an epitaxial wafer structure with three layers of grating materials by using Metal Organic Chemical Vapor Deposition (MOCVD); growing a silicon nitride film on the epitaxial wafer;
s2, using the photoetching plate as a mask layer to cover part of the silicon nitride film, and exposing the silicon nitride film under a photoetching machine to manufacture a photoetching film with a certain duty ratio;
s3, cooling the corrosive liquid, corroding the epitaxial wafer by utilizing the termination effect of the low-temperature condition on the lateral corrosion, and measuring the height of the grid bars and the width of the tops of the grid bars under different corrosion time by utilizing a scanning electron microscope;
s4, until a plurality of V-groove-shaped structures are corroded, forming a plurality of grid bars, recording corrosion time, ending corrosion, and removing the silicon nitride film;
s5, forming a V-shaped groove according to the etching load effect, determining an included angle formed when the corrosion of the three layers of grating materials in the longitudinal direction is stopped, and determining the corrosion depth by controlling the opening width of the pattern;
s6, setting the depth h of the V groove according to S5 as the total thickness of the grating layer, and determining the thickness d2 of the second layer of grating material according to the coupling coefficient; calculating the thickness d1 of the first layer of grating material and the thickness d3 of the third layer of grating material;
s7, regenerating an epitaxial wafer according to the calculated thickness of each layer of grating material;
s8, growing a silicon nitride film with the same thickness as that of the step S1 on the regenerated epitaxial wafer; thereby producing the grating with the current required duty ratio;
and S9, after finishing the grating with the current required duty ratio, continuously growing a P-InP layer and a Zn-doped P-InGaAs ohmic contact layer in the direction of the grating layer to finish the epitaxial process of the DFB laser.
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Application publication date: 20210129 |