CN112285611A - Device failure positioning analysis method - Google Patents
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Abstract
The application relates to the technical field of failure analysis, and particularly discloses a device failure analysis positioning method, which comprises the following steps: calibrating the scanning probe to obtain calibration data; controlling a scanning probe to scan the device to be tested and obtaining first parameter information, wherein the first parameter information is used for representing electromagnetic field information of a scanning height plane of the device to be tested; determining electromagnetic field information of a target height plane of the device to be measured according to the first parameter information and the calibration data; determining the electrical distribution of the surface of the device to be tested according to the electromagnetic field information of the target height plane of the device to be tested; and determining the failure position of the device to be tested according to the electrical distribution of the surface of the device to be tested. Based on the principle of electromagnetic injection and detection, the failure position of the device to be detected is analyzed by combining the electromagnetic field information on the surface of the device to be detected, compared with the traditional failure analysis method, the method is low in cost, the device to be detected does not need to be damaged, and the reliability of the overall failure positioning method is high.
Description
Technical Field
The invention relates to the technical field of failure analysis, in particular to a device failure positioning analysis method.
Background
With the development of science and technology, electronic devices gradually show a trend of miniaturization, and accordingly, failure location methods for electronic devices are more and more complex, and the failure location methods in the conventional technology mainly include an X-ray technology, a synchronous thermal emission technology, a magnetic microscopy technology, an FIB analysis technology and the like.
The X-ray technology is a method for detecting internal defects of a sample by utilizing different attenuation coefficients of different materials of the sample through a perspective technology of X rays; the synchronous thermal emission technology is used for positioning and analyzing failures such as metal wire short circuit, oxide layer breakdown and damage by detecting hot spots; the magnetic microscopic defect positioning technology is a technology for positioning defects by adopting a magnetic microscope and analyzing a magnetic field on the surface of a device so as to judge the failure position of the device; the FIB (focused ion beam) analysis technology is to utilize electric transmission to focus ion beams into very small-sized ion beams to bombard the surface of a material, so as to realize stripping, deposition, injection, cutting and modification of the material, prepare a defect metallographic section to analyze a failure mechanism and find out the reason and the position of device failure.
Although the failure positioning analysis methods can realize failure analysis of electronic devices, the failure positioning analysis methods have certain defects, such as low-temperature superconducting measurement is needed in the magnetic microscopic defect positioning technology, and the cost is high; FIB analysis is a destructive analysis technique, and requires destruction of an electronic device.
Therefore, how to realize the failure location analysis of the device with low cost and high reliability is one of the technical problems which are urgently needed to be solved in the field.
Disclosure of Invention
In view of the above, it is necessary to provide a device failure location analysis method for solving the problem of how to implement a device failure location analysis with low cost and high reliability.
A device failure positioning analysis method is based on a near-field detection system, the near-field detection system comprises a scanning probe and a signal analysis device, the scanning probe is used for performing near-field scanning on a device to be detected, the signal analysis device is used for injecting signals into the device to be detected and analyzing signals generated by scanning of the scanning probe; the device failure positioning method comprises the following steps:
calibrating the scanning probe to obtain calibration data;
controlling the scanning probe to scan the device to be tested and obtaining first parameter information, wherein the first parameter information is used for representing electromagnetic field information of a scanning height plane of the device to be tested;
determining electromagnetic field information of the target height plane of the device to be measured according to the first parameter information and the calibration data;
determining the electrical distribution of the surface of the device to be tested according to the electromagnetic field information of the target height plane of the device to be tested;
and determining the failure position of the device to be tested according to the electrical distribution of the surface of the device to be tested.
In one embodiment, the step of calibrating the scanning probe and acquiring calibration data includes:
simulating to obtain electromagnetic field information of the calibration device on a target height plane;
controlling the scanning probe to scan the calibration device to obtain second parameter information, wherein the second parameter information is used for representing electromagnetic field information of the calibration device on a scanning height plane;
the step of determining the electromagnetic field information of the target height plane of the device to be measured according to the first parameter information and the calibration data comprises the following steps:
and acquiring the electromagnetic field information of the target height plane of the device to be measured according to the first parameter information, the second parameter information and the electromagnetic field information of the calibration device on the target height plane.
In one embodiment, the step of obtaining the electromagnetic field information of the target height plane of the device under test according to the first parameter information, the second parameter information, and the electromagnetic field information of the calibration device at the target height plane includes:
performing PWS domain transformation on the first parameter information to obtain first frequency domain information, performing PWS domain transformation on the second parameter information to obtain second frequency domain information, and performing PWS domain transformation on electromagnetic field information of the calibration device on a target height plane, which is obtained by simulation, to obtain third frequency domain information;
obtaining fourth frequency domain information corresponding to the electromagnetic field information of the target height plane of the device to be tested according to the first frequency domain information, the second frequency domain information and the third frequency domain information;
and performing PWS domain inverse transformation on the fourth frequency domain information to obtain electromagnetic field information of the target height plane of the device to be measured.
In one embodiment, the step of obtaining fourth frequency domain information corresponding to the electromagnetic field information of the target height plane of the device under test according to the first frequency domain information, the second frequency domain information, and the third frequency domain information includes:
obtaining fourth frequency domain information corresponding to the electromagnetic field information of the target height plane of the device to be tested by the following formula:
wherein,
for the target height z of the device under testjFourth frequency domain information corresponding to the planar electromagnetic field information,
calibration device obtained for simulation at target height zjThird frequency domain information corresponding to planar electromagnetic field information，
Scanning the height z for the calibration deviceiSecond frequency domain information corresponding to the planar electromagnetic field information,
scanning the height z for the dutiFirst frequency domain information corresponding to the planar electromagnetic field information.
In one embodiment, the electromagnetic field information comprises magnetic field strength information;
the step of determining the electrical distribution of the surface of the device to be tested according to the electromagnetic field information of the target height plane of the device to be tested comprises the following steps:
obtaining current components of the surface of the device to be tested in the X-axis direction and the Y-axis direction according to the magnetic field intensity information of the target height plane of the device to be tested;
and determining the position distribution of the surface current density of the device to be tested according to the current components in the X-axis direction and the Y-axis direction of the surface of the device to be tested.
In one embodiment, the electromagnetic field information includes electric field strength information;
the step of determining the electrical distribution of the surface of the device to be tested according to the electromagnetic field information of the target height plane of the device to be tested comprises the following steps:
and determining the surface charge distribution of the surface of the device to be tested according to the electric field intensity information of the target height plane of the device to be tested.
In one embodiment, the step of determining the failure location of the device under test according to the electrical distribution of the surface of the device under test includes:
determining a track of a current signal injected into the device to be tested according to the position distribution of the surface current density of the surface of the device to be tested;
determining a standing wave current distribution curve according to the track of the current signal;
and fitting the standing wave current distribution curve to determine the position of the open circuit failure of the device to be tested.
In one embodiment, the step of determining the failure location of the device under test according to the electrical distribution of the surface of the device under test further includes:
determining a track of a current signal injected into the device to be tested according to the surface charge distribution of the surface of the device to be tested;
determining a standing wave current distribution curve according to the track of the current signal;
and fitting the standing wave current distribution curve to determine the short-circuit failure position of the device to be tested.
In one embodiment, the step of fitting the standing wave current distribution curve comprises:
fitting the standing wave current distribution curve by the following fitting formula:
wherein I is the current signal, Z is the distance of the current signal from the failure location, β is the phase constant, Z0Is a characteristic impedance, PRFIs the incident power.
In one embodiment, after the step of determining the electromagnetic field information of the target height plane of the device under test according to the first parameter information and the calibration data, the device failure location analysis method further includes:
and comparing the electromagnetic field distribution diagram of the target height plane of the device to be tested with the electromagnetic field distribution diagram of the target height plane of the good device to determine the failure position of the device to be tested.
The device failure positioning analysis method is based on a near field detection system, firstly, a scanning probe of the near field detection system is calibrated, and calibration data is obtained; then controlling a scanning probe to scan the device to be tested and obtaining first parameter information representing electromagnetic field information of the device to be tested on a scanning height plane; determining electromagnetic field information of a target height plane of the device to be tested according to the first parameter information and the calibration data, and further determining the electrical distribution of the surface of the device to be tested; and finally, determining the failure position of the device to be tested according to the electrical distribution of the surface of the device to be tested. The failure position analysis method is based on the principle of electromagnetic injection and detection, and the analysis of the failure position of the device to be detected is realized by combining the electromagnetic field information on the surface of the device to be detected, so that compared with the traditional failure analysis method, the failure position analysis method is low in cost, the device to be detected does not need to be damaged, and the reliability of the overall failure positioning method is high.
Drawings
Fig. 1 is a schematic structural diagram of a near field detection system according to an embodiment of the present disclosure;
fig. 2 is a block flow diagram of a device failure location analysis method according to an embodiment of the present disclosure;
fig. 3 is a schematic diagram of different height planes involved in a device failure location analysis method provided in an embodiment of the present application;
fig. 4 is a block flow diagram of step S100 in the device failure location analysis method provided in the embodiment of the present application;
fig. 5 is a block flow diagram of step S301 in the device failure location analysis method according to the embodiment of the present application;
fig. 6 is a flowchart of step S400 in the device failure location analysis method according to the embodiment of the present application;
fig. 7 is a block flow diagram of step S500 in the device failure location analysis method provided in the embodiment of the present application;
fig. 8 is a schematic diagram of a standing wave current distribution curve in the device failure location analysis method according to the embodiment of the present disclosure;
fig. 9 and fig. 10 are electromagnetic field distribution diagrams of a good device and a device under test in the device failure positioning analysis method according to the embodiment of the present application.
Detailed Description
To facilitate an understanding of the invention, the invention will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present invention are shown in the drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
The terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
At present, the common device failure analysis method mainly adopts an X-ray analysis technology, a synchronous thermal emission technology, a magnetic microscopy technology and an FIB analysis technology. The X-ray analysis technology is a method for detecting internal defects of a sample by using the different attenuation coefficients of different materials of the sample by using the perspective technology of X rays, the attenuation degree is related to the material, the thickness, the density and the like of the sample, the intensity of the transmitted sample is exponentially attenuated along with the absorption coefficient and the thickness of the material, and images with different gray levels corresponding to the internal structure and the defects of the material are formed. The synchronous thermal emission technology is used for positioning and analyzing failures such as metal wire short circuit, oxide layer breakdown, damage and the like by detecting hot spots. The magnetic microscope is used to locate the defect and analyze the magnetic field on the surface of the device to judge the failure position of the device. The FIB (Focused Ion beam) defect analysis technology focuses Ion beams into very small-sized Ion beams by using electric transmission to bombard the surface of a material, so as to realize stripping, deposition, injection, cutting and modification of the material.
Although the failure analysis methods can realize the failure analysis of the devices, the method is high in cost, needs to damage the devices, and is not suitable for the failure analysis of large-scale devices.
Aiming at the problems, the method is different from the traditional failure analysis method, and provides a device failure positioning analysis method which is low in cost, suitable for large-scale devices and high in reliability based on the electromagnetic near field detection principle.
The device failure positioning analysis method is based on a near-field detection system, and firstly introduces the near-field detection system.
As shown in fig. 1, the near field detection system in the present application includes a scanning probe and a signal analysis device, where the scanning probe is used to perform near field scanning on a device to be detected, and the signal analysis device is used to inject a signal into the device to be detected and analyze a signal generated by scanning of the scanning probe.
The scanning probe is a near-field probe and can comprise a composite probe, a single probe and the like. The signal analysis equipment can comprise a network analyzer, a port of the network analyzer can be connected with a failure pin of the device to be tested in a needle inserting or welding mode, and a current signal is injected into the failure pin of the device to be tested through the port of the network analyzer. The near-field probe is connected with the network analyzer and used for performing near-field scanning on the device to be detected and generating an electric signal, and the network analyzer analyzes the electric signal after receiving the electric signal so as to obtain corresponding electromagnetic field information. During the scanning process, the near-field probe does not contact the surface of the device to be measured, and keeps a small distance, such as 100 microns, with the surface of the device to be measured.
In addition, a signal source for injecting a current signal into a failure pin of the device to be tested can be separately arranged, that is, a signal analysis device for analyzing a signal generated by the scanning probe and the signal source are separately arranged.
As shown in fig. 2, the device failure location method provided by the present application includes the following steps:
and S100, calibrating the scanning probe to acquire calibration data.
Before scanning and detecting the device to be detected, firstly, the scanning probe is calibrated to obtain calibration data so as to analyze electromagnetic field information on the surface of the device to be detected by combining the calibration data subsequently.
And S200, controlling the scanning probe to scan the device to be tested and obtaining first parameter information, wherein the first parameter information is used for representing electromagnetic field information of a scanning height plane of the device to be tested.
After the scanning probe is calibrated, the device to be measured can be scanned through the scanning probe, that is, the scanning probe is controlled to scan a plane with a preset height above the surface of the device to be measured, and the plane is defined as a scanning height plane in the application. When the signal analysis equipment acquires the electric signal generated by the scanning probe, first parameter information can be obtained through analysis, wherein the first parameter information is used for representing electromagnetic field information of a scanning height plane of the device to be tested.
And step S300, determining the electromagnetic field information of the target height plane of the device to be measured according to the first parameter information and the calibration data.
The target height plane refers to a plane with a certain height from the surface of the device to be measured, and after the first parameter information and the calibration data are obtained, the electromagnetic field information of the target height plane of the device to be measured can be obtained according to the first parameter information and the calibration data.
And S400, determining the electrical distribution of the surface of the device to be tested according to the electromagnetic field information of the target height plane of the device to be tested.
After the electromagnetic field information of the target height plane of the device to be measured is acquired, the electrical distribution of the surface of the device to be measured can be determined accordingly, wherein the electrical distribution can comprise position distribution of surface current density and/or surface charge distribution and the like.
And S500, determining the failure position of the device to be tested according to the electrical distribution of the surface of the device to be tested.
The device failure positioning analysis method is based on a near field detection system, firstly, a scanning probe of the near field detection system is calibrated, and calibration data is obtained; then controlling a scanning probe to scan the device to be tested and obtaining first parameter information representing electromagnetic field information of the device to be tested on a scanning height plane; determining electromagnetic field information of a target height plane of the device to be tested according to the first parameter information and the calibration data, and further determining the electrical distribution of the surface of the device to be tested; and finally, determining the failure position of the device to be tested according to the electrical distribution of the surface of the device to be tested. The failure position analysis method is based on the principle of electromagnetic injection and detection, and the analysis of the failure position of the device to be detected is realized by combining the electromagnetic field information on the surface of the device to be detected, so that compared with the traditional failure analysis method, the failure position analysis method is low in cost, the device to be detected does not need to be damaged, and the reliability of the overall failure positioning method is high. In addition, the device failure positioning analysis method provided by the application can be applied to failure positioning analysis of large-scale devices.
As shown in fig. 4, in one embodiment, step S100, namely calibrating the scanning probe, the step of acquiring calibration data includes the following steps:
and step S101, simulating to obtain electromagnetic field information of the calibration device on a target height plane.
Specifically, the calibration device may be obtained at the target height Z using a computer simulation method, such as HFSS simulationjPlanar electromagnetic field information. In this embodiment, the electromagnetic field information may include electric field strength information and/or magnetic field strength information.
And S102, controlling the scanning probe to scan the calibration device to obtain second parameter information, wherein the second parameter information is used for representing the electromagnetic field information of the calibration device on a scanning height plane.
By adopting the near-field detection system, a calibration device, a signal analysis device and a scanning probe are configured. And controlling the scanning probe to scan the calibration device, and analyzing to obtain second parameter information by the signal analysis equipment after acquiring the electric signal generated by the scanning probe. The second parameter information is a parameter that can be directly measured by a signal analysis device, such as a network analyzer, according to the electrical signal generated by the scanning probe, and is used for representing the electromagnetic field information of the calibration device in the scanning height plane.
In one embodiment, the step S300 of determining the electromagnetic field information of the target height plane of the device under test according to the first parameter information and the calibration data includes the following steps:
step S301, obtaining electromagnetic field information of the target height plane of the device to be measured according to the first parameter information, the second parameter information and the electromagnetic field information of the calibration device on the target height plane.
When the first parameter information used for representing the electromagnetic field information of the scanning height plane of the device to be tested, the second parameter information used for representing the electromagnetic field information of the calibration device on the scanning height plane and the electromagnetic field information of the calibration device on the target height plane are obtained, the electromagnetic field information of the target height plane of the device to be tested can be determined through an analogy method.
As shown in fig. 5, in one embodiment, the step S301 of obtaining the electromagnetic field information of the target height plane of the device to be measured according to the first parameter information, the second parameter information and the electromagnetic field information of the calibration device at the target height plane includes the following steps:
step S3011, PWS domain transformation is carried out on the first parameter information to obtain first frequency domain information, PWS domain transformation is carried out on the second parameter information to obtain second frequency domain information, and PWS domain transformation is carried out on electromagnetic field information of the calibration device obtained through simulation on the target height plane to obtain third frequency domain information.
And S3012, obtaining fourth frequency domain information corresponding to the electromagnetic field information of the target height plane of the device to be measured according to the first frequency domain information, the second frequency domain information and the third frequency domain information.
And step S3013, performing PWS domain inverse transformation on the fourth frequency domain information to obtain electromagnetic field information of the target height plane of the device to be measured.
Specifically, PWS domain transformation can be performed on the first parameter information, the second parameter information, and the electromagnetic field information of the calibration device obtained by simulation at the target height plane according to the plane spectrum theory, that is, the position domain is transformed into corresponding frequency domain information, which is the first frequency domain information, the second frequency domain information, and the third frequency domain information. And converting the first frequency domain information into fourth frequency domain information through frequency domain analogy of the calibration piece, wherein the fourth frequency domain information corresponds to the electromagnetic field information of the target height plane of the device to be tested. And finally, performing PWS domain inverse transformation on the fourth frequency domain information to obtain electromagnetic field information of the device to be measured on the target height plane.
In one embodiment, the step S3012 of obtaining fourth frequency domain information corresponding to the electromagnetic field information of the target height plane of the device to be measured according to the first frequency domain information, the second frequency domain information, and the third frequency domain information includes the following steps:
obtaining fourth frequency domain information corresponding to the electromagnetic field information of the target height plane of the device to be measured by the following formula:
wherein,
for the target height z of the device under testjFourth frequency domain information corresponding to the planar electromagnetic field information,
calibration device obtained for simulation at target height zjThird frequency domain information corresponding to the planar electromagnetic field information,
scanning the height z for the calibration deviceiSecond frequency domain information corresponding to the planar electromagnetic field information,
scanning the height z for the dutiFirst frequency domain information corresponding to the planar electromagnetic field information.
As shown in FIG. 6, in one embodiment, the electromagnetic field information includes magnetic field strength information;
step S400, namely, the step of determining the electrical distribution of the surface of the device to be tested according to the electromagnetic field information of the target height plane of the device to be tested comprises the following steps:
step S401, obtaining current components of the surface of the device to be measured in the X-axis direction and the Y-axis direction according to the magnetic field intensity information of the target height plane of the device to be measured.
Specifically, the magnetic field strength information of the target height plane of the device under test may be first transformed into a plane spectrum domain, and then current components in the X-axis direction and the Y-axis direction are obtained through calculation.
Step S402, determining the position distribution of the surface current density of the device to be tested according to the current components of the surface of the device to be tested in the X-axis direction and the Y-axis direction.
Specifically, the obtained current components in the X-axis direction and the Y-axis direction are respectively subjected to inverse transformation to obtain corresponding position domain information, and then the position distribution of the surface current density of the surface of the device to be measured is obtained by calculation according to the position domain information of the current components in the X-axis direction and the position domain information of the current components in the Y-axis direction.
In one embodiment, the electromagnetic field information includes electric field strength information;
step S400, namely, the step of determining the electrical distribution of the surface of the device to be tested according to the electromagnetic field information of the target height plane of the device to be tested comprises the following steps:
step S403, determining the surface charge distribution of the surface of the device to be tested according to the electric field intensity information of the target height plane of the device to be tested.
Specifically, the electric field strength information of the target height plane of the device to be tested may be first transformed into a planar spectral domain, then the planar spectral domain information of the surface charge distribution of the device to be tested is obtained by calculation according to the planar spectral domain information corresponding to the electric field strength information of the target height plane of the device to be tested, and finally the planar spectral domain information of the surface charge distribution of the surface of the device to be tested is inversely transformed to obtain the required surface charge distribution of the surface of the device to be tested.
As shown in fig. 7, in one embodiment, the step S500 of determining the failure location of the device under test according to the electrical distribution of the surface of the device under test includes the following steps:
step S501, determining a track of a current signal injected into the device to be tested according to the position distribution of the surface current density of the surface of the device to be tested.
And step S502, determining a standing wave current distribution curve according to the track of the current signal.
And S503, fitting the standing wave current distribution curve to determine the open-circuit failure position of the device to be tested.
When the internal circuit of the device to be tested is open-circuited, the current distribution along the track of the current signal is represented in a sine standing wave form, and after the standing wave current distribution curve is determined, the standing wave current distribution curve can be fitted according to a fitting formula, so that the position of the open-circuit point of the device to be tested is determined.
In one embodiment, the step S500 of determining the failure location of the device under test according to the electrical distribution of the surface of the device under test further includes the following steps:
step S504, determining the track of the current signal injected into the device to be tested according to the surface charge distribution of the surface of the device to be tested.
And step S505, determining a standing wave current distribution curve according to the track of the current signal.
And S506, fitting the standing wave current distribution curve to determine the short-circuit failure position of the device to be tested.
When the surface charge distribution of the surface of the device to be tested is obtained, the position of short circuit failure of the device to be tested can be determined, and the method is similar to the method for determining the position of open circuit failure of the device to be tested.
In one embodiment, the step of fitting the standing wave current distribution curve in the above steps S503 and S506 includes the steps of:
fitting the standing wave current distribution curve by the following fitting formula:
wherein I is the current signal, Z is the distance of the current signal from the failure location, β is the phase constant, Z0Is a characteristic impedance, PRFIs the incident power.
In one embodiment, step S300, after the step of determining the electromagnetic field information of the target height plane of the device under test according to the first parameter information and the calibration data, further includes the following steps:
step S600, comparing the electromagnetic field distribution diagram of the target height plane of the device to be tested with the electromagnetic field distribution diagram of the target height plane of the good device, and determining the failure position of the device to be tested.
In addition to the open circuit failure location method of steps S501-S503 and the short circuit failure location method of steps S504-S506, the failure location can be determined directly by comparing the electromagnetic field distribution patterns. Specifically, the electromagnetic field distribution map of the good device on the target height plane can be obtained first, then the electromagnetic field distribution map is compared with the electromagnetic field distribution map of the target height plane of the device to be tested, and the difference position points of the electromagnetic field distribution map are recorded, so that the position where the good device may fail can be determined. The method can judge the failure positions of current leakage and virtual short teasel roots.
The device failure location analysis method provided by the present application is described below with reference to a specific example:
firstly, the near-field probe is calibrated, and a microstrip line is selected as a calibration piece for calibration.
Specifically, the microstrip line at the target height z is obtained through HFSS simulationjPlanar electromagnetic field information
Wherein sim represents the simulation result, ref represents the calibration piece, x and y represent the plane where the microstrip line surface is located, and γ represents the electromagnetic field information, which can be magnetic field intensity Hx, Hy and Hz, and can also be electric field intensity Ex, Ey and Ez.
The microstrip line is scanned in the near field by a near field probe, and the parameter information (namely the first parameter information of the electromagnetic field information for representing the microstrip line scanning height plane) is read by a network analyzer and recorded as
Wherein meas represents the measurement result.
According to the plane wave spectrum theory, to
And
performing PWS domain transformation to obtain corresponding frequency domain information, i.e. third frequency domain information
And second frequency domain information
The following is a transformation equation taking the magnetic field strength Hx as an example:
secondly, near-field scanning and data preprocessing are carried out on the device to be tested
Near-field scanning is carried out on the device to be tested, and the scanning height z for representing the device to be tested is recorded by a network analyzeriThe parameter information of the planar electromagnetic field information, i.e. the first parameter information, is recorded as
To pair
Performing PWS domain transformation to obtain
I.e., the first frequency domain information, the following is a transformation equation:
according to the first frequency domain information
Second frequency domain information
And third frequency domain information
Obtaining fourth frequency domain information by a similarity method
And the fourth frequency domain information is used for representing the electromagnetic field information of the target height plane of the device to be measured. The following is a calculation formula of the fourth frequency domain information:
performing inverse transformation on the fourth frequency domain information to obtain the target height z of the device to be testedjPlanar electromagnetic field information:
it is noted that electricityThe magnetic field information is divided into electric field intensity and magnetic field intensity, if the test result is the magnetic field intensity in the horizontal X-axis direction, the magnetic field intensity is recorded as
The magnetic field strength in the Y-axis or Z-axis direction is recorded as
Or
Similarly, if the test result is the electric field strength, it can be recorded as
And
third, reduction of the magnetic near field to the surface current density
For the obtained magnetic field intensity information
Performing two-dimensional Fourier transform to obtain plane spectral domain information
In the same way to
And
and carrying out two-dimensional Fourier transform to obtain corresponding plane spectral domain information.
Calculating and obtaining the X-axis direction of the device to be measured according to the obtained plane spectral domain informationComponent of current
And current component in the Y-axis direction
Specifically, the current component can be calculated according to the following equation:
the current component in the X-axis direction obtained by calculation is:
the current component in the Y-axis direction obtained by calculation is:
inversely transforming the obtained current component in the X-axis direction and the current component in the Y-axis direction of the device to be tested to obtain
And
and performing a sum of squares operation and an evolution operation on the obtained position distribution J to obtain the position distribution J of the surface current densityDUT(x,y)。
Fourth, reduction of the electric near field to surface charge
For the obtained electric field intensity information
Performing two-dimensional Fourier transform to obtain plane spectral domain information
Calculating a plane wave spectrum domain expression of the surface charge distribution of the surface of the device to be measured:
and finally, performing inverse transformation on the surface charge distribution to obtain the surface charge distribution of the device to be tested:
fifth, failure positioning method
As shown in fig. 8, the track of the injected current signal is found according to the obtained position distribution of the surface current density of the device under test, and the intensity distribution curve of the current density, i.e. the standing wave current distribution curve, can be drawn along the track line.
Fitting the standing wave current distribution curve by using the following fitting formula to calculate the position of the possible fracture in the vertical direction, namely the position point of the open circuit failure of the device to be tested:
wherein I represents the signal along the line, Z represents the distance of the signal from the open point, and Z0Denotes a characteristic impedance, beta denotes a phase constant, PRFRepresenting the incident power.
Similarly, through the obtained surface charge distribution of the surface of the device under test, the position point of the short circuit failure of the device under test can be obtained in the same way.
In addition, the electromagnetic field distribution diagram of the good device and the device to be tested can be compared to judge the position point of the device to be tested, wherein the position point is possible to fail. The method can be suitable for failure types such as current leakage, virtual short and the like. Fig. 9 shows electromagnetic field distribution diagrams of a good device and a device under test in a specific example, and fig. 10 shows electromagnetic field distribution diagrams of a good device and a device under test in another specific example, it can be seen from the diagrams that there is a large difference between electromagnetic field distribution at a failure position of a device under test and electromagnetic field distribution at the same position of a good device, and thus the failure position of the device under test can be determined.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. A device failure positioning analysis method is characterized in that the device failure positioning analysis method is based on a near-field detection system, the near-field detection system comprises a scanning probe and a signal analysis device, the scanning probe is used for performing near-field scanning on a device to be detected, the signal analysis device is used for injecting signals into the device to be detected and analyzing signals generated by scanning of the scanning probe; the device failure positioning method comprises the following steps:
calibrating the scanning probe to obtain calibration data;
controlling the scanning probe to scan the device to be tested and obtaining first parameter information, wherein the first parameter information is used for representing electromagnetic field information of a scanning height plane of the device to be tested;
determining electromagnetic field information of the target height plane of the device to be measured according to the first parameter information and the calibration data;
determining the electrical distribution of the surface of the device to be tested according to the electromagnetic field information of the target height plane of the device to be tested;
and determining the failure position of the device to be tested according to the electrical distribution of the surface of the device to be tested.
2. The device failure location analysis method of claim 1, wherein the step of calibrating the scanning probe to obtain calibration data comprises:
simulating to obtain electromagnetic field information of the calibration device on a target height plane;
controlling the scanning probe to scan the calibration device to obtain second parameter information, wherein the second parameter information is used for representing electromagnetic field information of the calibration device on a scanning height plane;
the step of determining the electromagnetic field information of the target height plane of the device to be measured according to the first parameter information and the calibration data comprises the following steps:
and acquiring the electromagnetic field information of the target height plane of the device to be measured according to the first parameter information, the second parameter information and the electromagnetic field information of the calibration device on the target height plane.
3. The device failure location analysis method of claim 2, wherein the step of obtaining the electromagnetic field information of the target height plane of the device to be tested according to the first parameter information, the second parameter information and the electromagnetic field information of the calibration device in the target height plane comprises:
performing PWS domain transformation on the first parameter information to obtain first frequency domain information, performing PWS domain transformation on the second parameter information to obtain second frequency domain information, and performing PWS domain transformation on electromagnetic field information of the calibration device on a target height plane, which is obtained by simulation, to obtain third frequency domain information;
obtaining fourth frequency domain information corresponding to the electromagnetic field information of the target height plane of the device to be tested according to the first frequency domain information, the second frequency domain information and the third frequency domain information;
and performing PWS domain inverse transformation on the fourth frequency domain information to obtain electromagnetic field information of the target height plane of the device to be measured.
4. The device failure location analysis method of claim 3, wherein the step of obtaining fourth frequency domain information corresponding to the electromagnetic field information of the target height plane of the device under test according to the first frequency domain information, the second frequency domain information, and the third frequency domain information comprises:
obtaining fourth frequency domain information corresponding to the electromagnetic field information of the target height plane of the device to be tested by the following formula:
wherein,
for the target height z of the device under testjFourth frequency domain information corresponding to the planar electromagnetic field information,
calibration device obtained for simulation at target height zjThird frequency domain information corresponding to the planar electromagnetic field information,
scanning the height z for the calibration deviceiSecond frequency domain information corresponding to the planar electromagnetic field information,
scanning the height z for the dutiFirst frequency domain information corresponding to the planar electromagnetic field information.
5. The device failure location analysis method of claim 3, wherein the electromagnetic field information comprises magnetic field strength information;
the step of determining the electrical distribution of the surface of the device to be tested according to the electromagnetic field information of the target height plane of the device to be tested comprises the following steps:
obtaining current components of the surface of the device to be tested in the X-axis direction and the Y-axis direction according to the magnetic field intensity information of the target height plane of the device to be tested;
and determining the position distribution of the surface current density of the device to be tested according to the current components in the X-axis direction and the Y-axis direction of the surface of the device to be tested.
6. The device failure location analysis method of claim 3, wherein the electromagnetic field information includes electric field strength information;
the step of determining the electrical distribution of the surface of the device to be tested according to the electromagnetic field information of the target height plane of the device to be tested comprises the following steps:
and determining the surface charge distribution of the surface of the device to be tested according to the electric field intensity information of the target height plane of the device to be tested.
7. The device failure location analysis method of claim 5, wherein the step of determining the failure location of the device under test according to the electrical distribution of the surface of the device under test comprises:
determining a track of a current signal injected into the device to be tested according to the position distribution of the surface current density of the surface of the device to be tested;
determining a standing wave current distribution curve according to the track of the current signal;
and fitting the standing wave current distribution curve to determine the position of the open circuit failure of the device to be tested.
8. The device failure location analysis method of claim 6, wherein the step of determining the failure location of the device under test according to the electrical distribution of the surface of the device under test further comprises:
determining a track of a current signal injected into the device to be tested according to the surface charge distribution of the surface of the device to be tested;
determining a standing wave current distribution curve according to the track of the current signal;
and fitting the standing wave current distribution curve to determine the short-circuit failure position of the device to be tested.
9. The device failure location analysis method of claim 7 or 8, wherein the step of fitting the standing wave current distribution curve comprises:
fitting the standing wave current distribution curve by the following fitting formula:
wherein I is the current signal, Z is the distance of the current signal from the failure location, β is the phase constant, Z0Is a characteristic impedance, PRFIs the incident power.
10. The device failure location analysis method of claim 1, wherein after the step of determining electromagnetic field information for the target height plane of the device under test based on the first parameter information and the calibration data, the device failure location analysis method further comprises:
and comparing the electromagnetic field distribution diagram of the target height plane of the device to be tested with the electromagnetic field distribution diagram of the target height plane of the good device to determine the failure position of the device to be tested.
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