CN112271156A - Electrostatic transfer head and manufacturing method thereof - Google Patents
Electrostatic transfer head and manufacturing method thereof Download PDFInfo
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- CN112271156A CN112271156A CN202011037950.3A CN202011037950A CN112271156A CN 112271156 A CN112271156 A CN 112271156A CN 202011037950 A CN202011037950 A CN 202011037950A CN 112271156 A CN112271156 A CN 112271156A
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- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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Abstract
The invention provides an electrostatic transfer head and a manufacturing method thereof, wherein the electrostatic transfer head comprises a substrate, a plurality of plateaus arranged on the substrate in an array manner, grooves positioned between adjacent plateaus and arranged on the substrate, electrode wires and grounding wires positioned in the grooves, grooves arranged on each plateau, at least one electrode covered on the plateaus and on the side edges, and a dielectric layer; wherein the electrode covers at least part of the groove, the electrode wire is connected with the electrode on the adjacent plateau, and the dielectric layer is positioned between the electrode wire and the grounding wire and covers the electrode and the groove. The electrostatic transfer head of the present invention forms a bipolar electrode or a unipolar electrode by forming a groove on a stage, the electrode adsorbing and transferring a micro device; the groove well solves the problem of offset between the electrostatic transfer head and the micro device, and in addition, a grounding wire is added above the electrode wire to well shield an electric field generated by the electrode wire.
Description
Technical Field
The invention belongs to the technical field of micro devices, and particularly relates to an electrostatic transfer head and a manufacturing method thereof.
Background
The electrostatic adsorption has the advantages of simple operation, quick electrostatic discharge and the like. When the transfer head manufactured by utilizing the electrostatic adsorption principle transfers the micro device, the surface of the micro device is not polluted, the electrostatic discharge speed is high, and the transfer effect is good.
When the micro device is transferred, the electrostatic force is weakened by a gap between the micro device and the transfer head according to an electrostatic force formula, so that an external force is required to be applied to enable the suction head to be in contact with the micro device, the micro device is easy to deviate from the electrostatic transfer head in the process, and in addition, the electrode wire between the suction head and the suction head is charged to attract the non-target micro device to cause certain interference on the transfer.
Disclosure of Invention
The invention aims to provide an electrostatic transfer head for solving the adsorption offset problem and shielding an electric field and a manufacturing method thereof.
The invention provides an electrostatic transfer head, which comprises a substrate, a plurality of plateaus arranged on the substrate in an array manner, a groove, an electrode wire, a grounding wire, a groove, at least one electrode and a dielectric layer, wherein the groove is positioned between adjacent plateaus and arranged on the substrate; wherein the electrode covers at least part of the groove, the electrode wire is connected with the electrode on the adjacent plateau, and the dielectric layer is positioned between the electrode wire and the grounding wire and covers the electrode and the groove.
Further, each plateau includes a first projection and a second projection, and the recess is located between the first projection and the second projection.
Furthermore, two electrodes are arranged on each plateau and on the side edges, which are respectively a first electrode and a second electrode, the first electrode covers on the first protrusion, part of the groove and part of the side edges of the plateau, the second electrode covers on the second protrusion, part of the groove and part of the side edges of the plateau, and the first electrode and the second electrode have a gap in the groove.
Further, suppose that two adjacent plateaus are respectively a first plateau and a second plateau, and the second electrode on the first plateau is electrically connected with the first electrode on the second plateau through an electrode wire positioned between the first plateau and the second plateau.
Further, the first electrode and the second electrode on the same plateau are inputted with a positive polarity voltage and a negative polarity voltage, respectively.
Furthermore, each plateau is provided with an electrode; the two adjacent plateaus are assumed to be a first plateau and a second plateau respectively, the electrodes positioned on the first plateau and on the side edges are first electrodes, the electrodes positioned on the second plateau and on the side edges are second electrodes, the first electrodes are positioned in the grooves of the first plateaus, cover the second bulges of the first plateaus and the side edges connected with the second bulges, the second electrodes are positioned in the grooves of the second plateaus, cover the first bulges of the first plateaus and the side edges connected with the first bulges, and the first electrodes and the second electrodes are connected through electrode wires between the first plateaus and the second plateaus.
Further, the ground wire is located at the bottom of the groove, and the upper end of the ground wire does not exceed the bottom of the plateau.
Further, the grounding wire is positioned inside the groove and between the side edges of the adjacent plateaus.
The invention also provides a manufacturing method of the electrostatic transfer head, which comprises the following steps:
s1: firstly, depositing a Cr/Au composite metal layer on a substrate; then stripping the Cr/Au composite metal layer to form a target pattern, and finally etching the substrate to form high platforms and grooves between the adjacent high platforms;
s2: continuously etching the high platforms to form grooves on each high platform, wherein the width of each groove is not less than that of the micro device;
s3: forming an electrode lead positioned in the groove and an electrode positioned in the groove;
s4: depositing a first dielectric layer;
s5: forming a ground line on the electrode lead;
s6: depositing a second dielectric layer;
s7: and dry etching the second dielectric layer.
The invention also provides a manufacturing method of the electrostatic transfer head, which comprises the following steps:
s1: firstly, depositing a Cr/Au composite metal layer on a substrate; then stripping the Cr/Au composite metal layer to form a target pattern, and finally etching the substrate to form high platforms and grooves between the adjacent high platforms;
s2: forming an electrode lead positioned in the groove and an electrode positioned in the groove;
s3: depositing a first dielectric layer;
s4: forming a ground line on the electrode lead;
s5: depositing a second dielectric layer;
s6: dry etching the second dielectric layer;
s7: and etching the plateaus to form a groove on each plateau, wherein the width of the groove is not less than that of the micro device.
The electrostatic transfer head of the present invention forms a bipolar electrode or a unipolar electrode by forming a groove on a stage, the electrode adsorbing and transferring a micro device; the groove well solves the problem of offset between the electrostatic transfer head and the micro device, and in addition, a grounding wire is added above the electrode wire to well shield an electric field generated by the electrode wire.
Drawings
FIG. 1 is a schematic structural diagram of an electrostatic transfer head according to a first embodiment of the present invention;
fig. 2 is a top view of the electrostatic transfer head of fig. 1;
FIG. 3 is a schematic diagram of the electrostatic transfer head of FIG. 1 transferring a micro device;
FIG. 4 is a schematic structural diagram of an electrostatic transfer head according to a second embodiment of the present invention;
FIG. 5 is a schematic structural diagram of an electrostatic transfer head according to a third embodiment of the present invention;
fig. 6 is a top view of the electrostatic transfer head of fig. 5;
fig. 7 is a schematic structural diagram of an electrostatic transfer head according to a fourth embodiment of the present invention.
Detailed Description
The present invention is further illustrated by the following figures and specific examples, which are to be understood as illustrative only and not as limiting the scope of the invention, which is to be given the full breadth of the appended claims and any and all equivalent modifications thereof which may occur to those skilled in the art upon reading the present specification.
For the sake of simplicity, the drawings only schematically show the parts relevant to the present invention, and they do not represent the actual structure as a product. In addition, in order to make the drawings concise and understandable, components having the same structure or function in some of the drawings are only schematically illustrated or only labeled. In this document, "one" means not only "only one" but also a case of "more than one".
The invention static electricity transfer head, fig. 1 is a schematic structural diagram of a first embodiment, the first embodiment is a bipolar static electricity transfer head, which includes a substrate 100, a plurality of plateaus 10 arranged on the substrate 100 in an array manner, a groove 21 arranged between adjacent plateaus 10 and arranged on the substrate 100, an electrode wire 31 and a grounding wire 32 arranged in the groove 21, a groove 22 arranged on each plateau 10, a first electrode 33 and a second electrode 34 groove covering the plateaus 10 and the side edges, and a dielectric layer 40, wherein the grounding wire 32 is only arranged at the bottom of the groove 21, the upper end of the grounding wire 32 does not exceed the bottom of the plateaus 10, the electrode wire 31 shields the electric field generated by the electrode wire 31, and prevents the non-transfer target micro device from being sucked; the groove 22 may prevent the micro device from shifting.
Wherein each plateau 10 comprises a first protrusion 11 and a second protrusion 12, a groove 22 is located between the first protrusion 11 and the second protrusion 12, a first electrode 33 is covered on the first protrusion 11, a part of the groove 22 and a part of the side edge of the plateau 10, a second electrode 34 is covered on the second protrusion 12, a part of the groove 22 and a part of the side edge of the plateau 10, and the first electrode 33 and the second electrode 34 have a space in the groove 22, so that the first electrode 33 and the second electrode 34 on each plateau 10 are insulated from each other.
Assuming that two adjacent plateaus are respectively a first plateau and a second plateau, the second electrode 34 on the first plateau and the first electrode 33 on the second plateau are electrically connected through the electrode wire 31 positioned between the first plateau and the second plateau, and the first electrode 33, the second electrode 34 and the electrode wire 31 are formed in the same layer. The dielectric layer 40 is located between the electrode line 31 and the ground line 32 and covers the first electrode 33, the second electrode 34, and the groove 22 between the first electrode 33 and the second electrode 34.
As shown in fig. 2, by providing two electrodes (a first electrode 33 and a second electrode 34) isolated from each other on each of the stages 10, the first electrode 33 and the second electrode 34 on the same stage 10 are inputted with a positive voltage and a negative voltage, respectively, so that the micro device 200 can be attracted.
As shown in fig. 3, the first electrode 33 and the second electrode 34 of each of the mesas 10 simultaneously attract one of the micro devices 300 on the temporary substrate 200 to be transferred and placed on the receiving electrode 500 of the receiving substrate 400.
The micro device 300 is adsorbed on the stage 10 by the first electrode 33 and the second electrode 34, and then transferred, wherein the electrostatic force P of the electrostatic transfer head is calculated as the following formula (1)
Wherein epsilon08.85 x 10-12, V is the voltage between the electrodes (i.e. the first electrode 33 and the second electrode 34) and the object to be adsorbed (i.e. the micro device), and er is the dielectric constant; d is the thickness of the dielectric layer; g is the distance between the dielectric layer and the object to be adsorbed (i.e. the micro device).
Fig. 4 is a schematic structural diagram of a second embodiment, which is different from the above embodiments in that: the ground line 32 is located inside the trench and between the sides of adjacent plateaus 10 so that the ground line 32 better shields the electric field it generates and prevents its pick-up of non-transfer target micro devices.
As shown in fig. 5, which is a schematic structural diagram of a third embodiment, the difference from the first embodiment is: the electrostatic transfer head of the present invention is a single electrostatic transfer head, and only one electrode 35 is provided on each stage 10.
It is assumed that two adjacent plateaus are respectively a first plateau and a second plateau, the electrode 35 positioned on the first plateau and on the side edge is a first electrode, the electrode 35 positioned on the second plateau and on the side edge is a second electrode, the first electrode is positioned in the groove of the first plateau, covers the second protrusion of the first plateau and the side edge connected with the second protrusion, the second electrode is positioned in the groove of the second plateau, covers the first protrusion of the first plateau and the side edge connected with the first protrusion, and the first electrode and the second electrode are connected through the electrode wire 31 between the first plateau and the second plateau.
As shown in fig. 6, by energizing the electrode lines 31 between adjacent plateaus 10, 2 electrodes on adjacent plateaus 10 are caused to attract the micro devices.
Fig. 7 is a schematic structural diagram of a fourth embodiment, which is different from the third embodiment in that: the ground line 32 is located inside the trench and between the sides of adjacent plateaus 10 so that the ground line 32 better shields the electric field it generates and prevents its pick-up of non-transfer target micro devices.
The present invention also provides a first embodiment of a method of manufacturing an electrostatic transfer head, as shown in fig. 2, including the steps of:
S1：
first, a Cr/Au complex metal layer is deposited on a substrate, wherein the thickness of Cr is not more than
Thickness of Au is not less than
Then stripping the Cr/Au composite metal layer to form a target pattern, and finally etching the substrate to form plateaus 10 and grooves 21 positioned between the adjacent plateaus;
s2: continuously etching the plateaus to form a groove 22 on each plateau 10, wherein the width of each groove 22 is not less than that of the micro device;
s3: forming an electrode lead 31 in the trench 21 and an electrode (the electrode is 2 electrodes or a single electrode, specifically the four embodiments described above) in the groove 22;
s4: depositing a first dielectric layer 41;
s5: forming a ground line 32 on the electrode lead 31;
s6: depositing a second dielectric layer 42;
s7: the second dielectric layer 42 is dry etched so that it only exists at the target location.
In the present embodiment, the dielectric layer 40 includes a first dielectric layer 41 and a second dielectric layer 42, the first dielectric layer 41 is located between the electrode lead 31 and the ground line 32, and the second dielectric layer 42 covers the ground line 32.
The specific steps of step S1 are:
s11: firstly, cleaning a glass substrate, specifically cleaning the glass substrate in an acidic or alkaline cleaning agent and then flushing the glass substrate; then continuously cleaning the glass substrate in an organic solution, wherein the organic solution is acetone or isopropanol, and ultrasonic waves can be adopted for auxiliary cleaning in the process of continuously cleaning the glass substrate in the organic solution;
s12: firstly, coating a negative photoresist on a glass substrate, wherein the thickness of the negative photoresist is not less than 2 um; then exposing and developing the negative photoresist;
s13: cleaning the exposed glass substrate by using plasma;
s14: depositing Cr/Au composite metal layer by physical vapor deposition (such as electron beam evaporation or magnetron sputtering) to obtain Cr/Au composite metal layer with thickness not greater than that of Cr
Thickness of Au is not less than
S15: stripping the Cr/Au composite metal layer by using a metal stripping technology (lift-off technology);
s16: firstly, wet etching is carried out on the stripped Cr/Au composite metal layer to form a bulge; then etching the substrate to form plateaus 10 and grooves 21 between adjacent plateaus; wherein the height of the mesa 10 is not less than the height of the micro device and the depth of the trench 21 is not less than 2 μm. The metal lift-off technology (metal lift-off technology) is to coat photoresist on a substrate, expose and develop the substrate, use a photoresist film with a certain pattern as a mask, evaporate the required metal with glue, remove the photoresist and simultaneously strip the metal on the glue film clean, and only leave the metal with the original pattern on the substrate.
The step S2 has the steps of:
s21: coating a positive photoresist, wherein the thickness of the positive photoresist is greater than the etching depth (specifically the height of the plateau);
s22: wet etching is carried out on the Cr/Au composite metal layer forming the high platform 10, the positive photoresist is removed after a target pattern is formed, then the high platform 10 is etched to form a groove 22, and the width of the groove 22 is not less than that of the micro device so as to form a target transfer head; s23: and removing the positive photoresist.
The specific steps of step S3 are:
s31: depositing a metal layer by using a physical vapor deposition technology, wherein the metal layer is made of Ti and Cu metal, and Cu is above Ti;
s32: coating a positive photoresist, then exposing and developing to etch the metal layer, and forming an electrode line 31 located in the trench 21 and an electrode (the electrode is 2 electrodes or a single electrode, specifically, the four embodiments described above) located in the groove 22;
s33: and removing the positive photoresist.
The specific method of step S4 is: deposition of SiNx, TiO by vapor deposition2Or Al2O3And the first dielectric layer 41.
The specific method of step S5 is: the grounding line 32 is formed on the first dielectric layer 41 and on the electrode line 31 by using a physical vapor deposition technique, and the material of the grounding line 32 is Ti or Cu.
The specific method of step S6 is: deposition of SiNx, TiO by vapor deposition2Or Al2O3And the second dielectric layer 42.
The present invention also provides a second embodiment of a method of manufacturing an electrostatic transfer head, comprising the steps of:
s1: first, a Cr/Au complex metal layer is deposited on a glass substrate (not shown), wherein the thickness of Cr is not more than
Thickness of Au is not less than
Then stripping and etching the Cr/Au composite metal layer to form plateaus 10 arranged in an array and grooves 21 positioned between the adjacent plateaus 10;
s2: forming an electrode lead 31 located in the groove 21 and an electrode 33 located in the groove 22;
s3: depositing a first dielectric layer 41;
s4: forming a ground line 32 on the electrode lead 31;
s5: depositing a second dielectric layer 42;
s6: dry etching the second dielectric layer 42 to leave only the target location;
s7: the mesas are etched to form grooves 22 on each mesa 10, the width of the grooves 22 being not less than the width of the micro devices.
Wherein, the specific steps of step S1 are:
s11: firstly, cleaning a glass substrate, specifically cleaning the glass substrate in an acidic or alkaline cleaning agent and then flushing the glass substrate; then continuously cleaning the glass substrate in an organic solution, wherein the organic solution is acetone or isopropanol, and ultrasonic waves can be adopted for auxiliary cleaning in the process of continuously cleaning the glass substrate in the organic solution;
s12: firstly, coating a negative photoresist on a glass substrate, wherein the thickness of the negative photoresist is not less than 2 um; then exposing and developing the negative photoresist;
s13: cleaning the exposed glass substrate by using plasma;
s14: depositing Cr/Au composite metal layer by physical vapor deposition (such as electron beam evaporation or magnetron sputtering) to obtain Cr/Au composite metal layer with thickness not greater than that of Cr
Thickness of Au is not less than
S15: stripping the Cr/Au composite metal layer by using a metal stripping technology (lift-off technology);
s16: wet etching the stripped Cr/Au composite metal layer to form raised plateaus 10 arranged in an array and grooves 21 positioned between the adjacent plateaus 10; the height of the mesa 10 is not less than the height of the micro device and the depth of the trench 21 is not less than 2 μm.
The specific steps of step S2 are:
s21: depositing a metal layer by using a physical vapor deposition technology, wherein the metal layer is made of Ti and Cu metal, and Cu is above Ti; s22: coating a positive photoresist, then performing exposure and development, and etching the metal layer to form an electrode line 31 positioned in the groove 21 and an electrode 33 positioned in the groove 22;
s23: and removing the positive photoresist.
The specific method of step S3 is: deposition of SiNx, TiO by vapor deposition2Or Al2O3And the first dielectric layer 41.
The specific method of step S4 is: the grounding line 32 is formed on the first dielectric layer 41 and on the electrode line 31 by using a physical vapor deposition technique, and the material of the grounding line 32 is Ti or Cu.
The specific method of step S5 is: deposition of SiNx, TiO by vapor deposition2Or Al2O3And the second dielectric layer 42. The step S7 has the steps of:
s71: coating a positive photoresist, wherein the thickness of the positive photoresist is greater than the etching depth (height of the plateau);
s72: wet etching is performed to etch a groove 22 on each mesa 10, the width of the groove 22 being not less than the width of the micro device, to form a target transfer head.
The electrostatic transfer head of the present invention forms a bipolar electrode or a unipolar electrode by forming a groove on a stage, the electrode adsorbing and transferring a micro device; the groove well solves the problem of offset between the electrostatic transfer head and the micro device, and in addition, a grounding wire is added above the electrode wire to well shield an electric field generated by the electrode wire.
Although the preferred embodiments of the present invention have been described in detail, the present invention is not limited to the details of the foregoing embodiments, and various equivalent changes (such as number, shape, position, etc.) may be made to the technical solution of the present invention within the technical spirit of the present invention, and these equivalent changes are all within the protection scope of the present invention.
Claims (10)
1. An electrostatic transfer head comprises a substrate, a plurality of plateaus arranged on the substrate in an array manner, and is characterized by further comprising grooves, electrode wires, grounding wires, grooves, at least one electrode and a dielectric layer, wherein the grooves are positioned between adjacent plateaus and arranged on the substrate; wherein the electrode covers at least part of the groove, the electrode wire is connected with the electrode on the adjacent plateau, and the dielectric layer is positioned between the electrode wire and the grounding wire and covers the electrode and the groove.
2. The electrostatic transfer head of claim 1, wherein each plateau includes a first protrusion and a second protrusion, the recess being located between the first protrusion and the second protrusion.
3. An electrostatic transfer head according to claim 2, wherein two electrodes are provided on and on each plateau, a first electrode overlying the first protrusion, part of the recess and part of the side edge of the plateau and a second electrode overlying the second protrusion, part of the recess and part of the side edge of the plateau, the first and second electrodes being spaced apart in the recess.
4. An electrostatic transfer head according to claim 3, wherein the second electrode on the first plateau and the first electrode on the second plateau are electrically connected by an electrode line located between the first plateau and the second plateau, assuming that there are two adjacent plateaus, a first plateau and a second plateau, respectively.
5. The electrostatic transfer head according to claim 5, wherein the first electrode and the second electrode on the same stage are inputted with a positive polarity voltage and a negative polarity voltage, respectively.
6. An electrostatic transfer head according to claim 2, wherein each plateau is provided with an electrode; the two adjacent plateaus are assumed to be a first plateau and a second plateau respectively, the electrodes positioned on the first plateau and on the side edges are first electrodes, the electrodes positioned on the second plateau and on the side edges are second electrodes, the first electrodes are positioned in the grooves of the first plateaus, cover the second bulges of the first plateaus and the side edges connected with the second bulges, the second electrodes are positioned in the grooves of the second plateaus, cover the first bulges of the first plateaus and the side edges connected with the first bulges, and the first electrodes and the second electrodes are connected through electrode wires between the first plateaus and the second plateaus.
7. An electrostatic transfer head according to any of claims 2 to 6, wherein the ground line is located at the bottom of the trench, the upper end of the ground line not exceeding the bottom of the plateau.
8. An electrostatic transfer head according to any of claims 2 to 6, wherein the ground line is located within the trench and between the sides of adjacent plateaus.
9. A method of manufacturing an electrostatic transfer head according to any of claims 1 to 8, comprising the steps of:
s1: firstly, depositing a Cr/Au composite metal layer on a substrate; then stripping the Cr/Au composite metal layer to form a target pattern, and finally etching the substrate to form high platforms and grooves between the adjacent high platforms;
s2: continuously etching the high platforms to form grooves on each high platform, wherein the width of each groove is not less than that of the micro device;
s3: forming an electrode lead positioned in the groove and an electrode positioned in the groove;
s4: depositing a first dielectric layer;
s5: forming a ground line on the electrode lead;
s6: depositing a second dielectric layer;
s7: and dry etching the second dielectric layer.
10. A method of manufacturing an electrostatic transfer head according to any of claims 1 to 8, comprising the steps of:
s1: firstly, depositing a Cr/Au composite metal layer on a substrate; then stripping the Cr/Au composite metal layer to form a target pattern, and finally etching the substrate to form high platforms and grooves between the adjacent high platforms;
s2: forming an electrode lead positioned in the groove and an electrode positioned in the groove;
s3: depositing a first dielectric layer;
s4: forming a ground line on the electrode lead;
s5: depositing a second dielectric layer;
s6: dry etching the second dielectric layer;
s7: and etching the plateaus to form a groove on each plateau, wherein the width of the groove is not less than that of the micro device.
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