CN112266238B - Low dielectric constant ceramic material for microwave device and preparation method thereof - Google Patents
Low dielectric constant ceramic material for microwave device and preparation method thereof Download PDFInfo
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Abstract
The invention provides a low dielectric constant ceramic material for microwave devices, relating to information functional materialsThe field of the technology. The ceramic material comprises a main material and a modifying additive. The main material is made of rare earth Ln a O b Doped Mg 2+x Si 5+x Al 4‑2x O 18 With SnO after pre-sintering 2 ·TiO 2 Mixture composition doped Ln a O b Mg of (2) 2+x Si 5+x Al 4‑2x O 18 ·y(SnO 2 ·TiO 2 ) Wherein 0 is<x<0.5，0<y<0.20, Ln is selected from Y, Ce, Sm, Pr, La, Dy, Ho, Er or Nd. The mass fraction of the main material in the low-dielectric-constant ceramic material is 98-99.5 wt%, and the mass fraction of the modified additive in the low-dielectric-constant ceramic material is 0.5-2 wt%. The ceramic material is a lead-free environment-friendly material, the main material components are synthesized by adopting a solid-phase synthesis method, modified additives are doped, the synthesis process is optimized through reasonable design of a formula, the powder with the granularity D50 of 0.6-2.10um is used for manufacturing an electronic ceramic device, the electronic ceramic device can be sintered into ceramic at the temperature of 1320-1420 ℃, the room-temperature dielectric constant epsilon of the electronic ceramic device is between 4.5 and 6.5, the quality factor Qf value is more than or equal to 60000GHz, and the temperature coefficient tau f (-40-85 ℃): 10 ppm/DEG C.
Description
Technical Field
The invention relates to the field of information functional materials, in particular to a low dielectric constant ceramic material for a microwave device and a preparation method and application thereof.
Background
The microwave dielectric ceramic material is a novel functional ceramic material which is rapidly developed in recent years. It has the features of low dielectric loss, high dielectric constant epsilon and stable dielectric constant temperature coefficient tau f. The material is a core base material of a novel microwave circuit and a device including a dielectric resonator, a filter, an oscillator, a duplexer, an antenna, a dielectric substrate and the like, and is widely applied to modern microwave communication and satellite navigation systems and equipment. With the progress of mobile communication and radar technologies, microwave electronic components are gradually developed towards high frequency, and microwave dielectric ceramic materials with low dielectric constants become research hotspots more and more. However, the dielectric constant of the existing microwave dielectric ceramic material is high, or the dielectric constant is low but the temperature coefficient of the resonant frequency is high, and the performance is unstable.
Disclosure of Invention
The invention aims to provide a low dielectric constant ceramic material for a microwave device and a preparation method thereof, so as to meet the requirements of the microwave device on the low dielectric constant and the low resonant frequency temperature coefficient of the used material.
The invention adopts the following scheme to achieve the aim.
A low-dielectric-constant ceramic material for microwave devices comprises a main material and a modifying additive. The main material is formed by passing through rare earth Ln a O b Doped Mg 2+x Si 5+x Al 4-2x O 18 With SnO after pre-sintering 2 ·TiO 2 Mixture composition doped Ln a O b Mg of (2) 2+ x Si 5+x Al 4-2x O 18 ·y(SnO 2 ·TiO 2 ) Wherein 0 is<x<0.5，0<y<0.20, Ln is selected from Y, Ce, Sm, Pr, La, Dy, Ho, Er or Nd; the mass fraction of the main material in the low-dielectric-constant ceramic material is 98-99.5 wt%; the mass fraction of the modified additive in the low-dielectric-constant ceramic material is 0.5-2 wt%.
Further, rare earth Ln a O b The molar ratio of doping is Mg 2+x Si 5+x Al 4-2x O 18 1-3% of the molar weight.
Further, the modifying additive is selected from Sb 2 O 3 、ZrO 2 、SrCO 3 、NiO、Nb 2 O 5 、SnO 2 And TiO 2 2 One or more of them.
Further, the mass fraction range of each modified additive in the low dielectric constant ceramic material is as follows: sb 2 O 3 0 to 1.2% of ZrO 2 0 to 1.0% of SrCO 3 0 to 0.8 percent of NiO, 0 to 1.5 percent of NiO and Nb 2 O 5 0 to 2.0% of SnO 2 0 to 1.1% of TiO 2 0 to 1.6%.
The invention also provides a preparation method of the low dielectric constant ceramic material, which comprises the following steps:
s1, synthesizing rare earth Ln by solid phase method a O b Doped Mg 2+x Si 5+x Al 4-2x O 18 : will Ln a O b Magnesium hydroxide, aluminum oxideMixing the silicon dioxide according to the proportion, grinding the mixture into uniform powder particles, and calcining the powder particles for 2 to 4 hours at the temperature of 1100 to 1300 ℃ in the air atmosphere to obtain Ln a O b Doped Mg 2+x Si 5+x Al 4-2x O 18 ；
S2 SnO synthesis by solid phase method 2 ·TiO 2 The mixture is as follows: mixing tin oxide and titanium dioxide according to a ratio, grinding into uniform powder particles, and calcining at the temperature of 1200-1250 ℃ for 1-2 hours in air atmosphere to obtain SnO 2 ·TiO 2 Mixing;
s3, mixing Ln obtained in step S1 a O b Doped Mg 2+x Si 5+x Al 4-2x O 18 SnO obtained in step S2 2 ·TiO 2 The mixture and the modified additive are mixed according to the formula requirement and are ground into uniform powder particles, and the low dielectric constant ceramic material in a powder state is obtained.
Further, in steps S1, S2 and S3, the powder is ground into uniform particles, specifically, the solid material is put into a ball mill, water is added to the solid material for wet ball milling, the particle size of D50 of the ball-milled particles is controlled to be 0.6 to 2.1um by controlling the ball milling strength and the ball milling time, and the ball-milled particles are dried.
Further, the preparation method also comprises the following steps:
s4, adding an adhesive, a plasticizer and a dispersing agent into the powder-state low-dielectric-constant ceramic material obtained in the step S3, performing ball milling for 1-2 hours to obtain slurry, drying to obtain powder, and pressing the powder into a green body;
s5, removing glue: heating the green body to 500-650 ℃, and preserving heat for 16-32 hours to obtain a green body;
s6, sintering: keeping the blank after the glue discharging at the temperature of 1320-1420 ℃ for 3-5 hours in an air atmosphere;
s7, annealing: and after sintering, keeping the temperature for 2-3 hours at 950-1050 ℃ to obtain the formed low-dielectric-constant ceramic material.
Further, in step S4, the binder is polyvinyl alcohol, the plasticizer is polyethylene glycol, and the dispersant is ammonium carboxylate.
Further, in the glue discharging process of the step S5, the heating speed is controlled to be less than 10 ℃/hour; and step S6, controlling the temperature rise speed to be 150-200 ℃/h.
The room-temperature dielectric constant of the low-dielectric-constant ceramic material obtained by the preparation method is 4.5-6.5, and the temperature coefficient tau f (-40-85 ℃): +/-10 ppm/deg.C, and Qf value greater than or equal to 60000 GHz.
The invention finally provides an application approach of the low-dielectric-constant ceramic material, which is applied to manufacturing microwave devices, wherein the microwave devices comprise laminated antennas, dielectric antennas, filters and resonators.
Mg in the main Material of the invention 2+x Si 5+x Al 4-2x O 18 When x is 0, the chemical formula is Mg 2 Si 5 Al 4 O 18 。Mg 2 Si 5 Al 4 O 18 The ceramic has excellent dielectric property in microwave frequency band, has dielectric constant of about 5.5, and is prepared from SiO 2 The quantity is increased and reduced, the temperature coefficient of resonant frequency is better to be within minus 30 ppm/DEG C, but the Qf value is about 40000, the practical application is influenced by relatively low value, and rare earth Ln is used a O b (where Ln is selected from Y, Ce, Sm, Pr, La, Dy, Ho, Er, Nd, etc.) and modifying to reduce Mg 2 Si 5 Al 4 O 18 The crystal phase internal defects greatly improve the Qf value of the crystal phase, and the maximum value can reach 120000. SnTiO 3 Is a ferroelectric material with perovskite structure, is difficult to synthesize, but is SnO 2 With TiO 2 SnO is obtained after pre-sintering with the molar number of 1:1 2 ·TiO 2 The mixture has stable chemical property and physical property, and can effectively improve Mg 2 Si 5 Al 4 O 18 The temperature coefficient of the ceramic and the temperature coefficient is made adjustable. The two materials are mixed according to a certain proportion, and a certain amount of auxiliary materials are added, so that the low-dielectric-constant ceramic material with low dielectric constant and temperature coefficient within +/-10 ppm/DEG C and good performance can be obtained.
The invention has the beneficial effects that: the ceramic material of the invention is a lead-free environment-friendly material, which is prepared by mixing rare earth Ln a O b (where Ln is selected from Y, Ce, Sm, Pr, La, Dy, Ho, Er, Nd, etc.) 2+x Si 5+x Al 4-2x O 18 SnO after presintering 2 ·TiO 2 And modifying additives are combined to prepare the powdery low dielectric constant ceramic material with good material uniformity and meeting the requirements of microwave devices, and the chemical formula of the powdery low dielectric constant ceramic material is doped Ln a O b Mg of (2) 2+x Si 5+x Al 4-2x O 18 ·y(SnO 2 ·TiO 2 ) Wherein 0 is<x<0.5，0<y<0.20. The ceramic material with low dielectric constant is obtained after sintering the powder-state ceramic material with low dielectric constant at the temperature of 1320-1420 ℃. The ceramic material can form a ceramic material with a room temperature dielectric constant of 4.5-6.5, a Qf value of more than or equal to 60000GHz and a temperature coefficient tau f (-40-85 ℃): +/-10 ppm/DEG C, and can meet the microwave performance requirement of the microwave device.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below. The examples, in which specific conditions are not specified, were conducted under conventional conditions or conditions recommended by the manufacturer. The reagents or instruments used are not indicated by the manufacturer, and are all conventional products available commercially.
The low dielectric constant ceramic material for microwave device includes main material and modifying additive. The main material is formed by passing through rare earth Ln a O b Doped Mg 2+x Si 5+x Al 4-2x O 18 With SnO after pre-sintering 2 ·TiO 2 Mixture composition doped Ln a O b Mg of (2) 2+x Si 5+x Al 4-2x O 18 ·y(SnO 2 ·TiO 2 ) Wherein 0 is<x<0.5，0<y<0.20, Ln is selected from Y, Ce, Sm, Pr, La, Dy, Ho, Er or Nd; the mass fraction of the main material in the low-dielectric-constant ceramic material is 98-99.5 wt%; the changeThe mass fraction of the additive in the low dielectric constant ceramic material is 0.5-2 wt%.
Wherein, for rare earth Ln a O b May be Y 2 O 3 、CeO 2 、Sm 2 O 3 、Pr 6 O 11 、La 2 O 3 、Dy 2 O 3 、Ho 2 O 3 、Er 2 O 3 Or Nd 2 O 3 。
Preferably, rare earth Ln a O b The molar ratio of doping is Mg 2+x Si 5+x Al 4-2x O 18 1-3% of the molar weight.
Preferably, the modifying additive is selected from Sb 2 O 3 、ZrO 2 、SrCO 3 、NiO、Nb 2 O 5 、SnO 2 And TiO 2 One or more of them. The modified additive can adjust the microwave performance of the ceramic material, reduce the range of the temperature coefficient tau f, improve the quality factor, reduce the dielectric constant and improve the microwave performance of the material.
Preferably, the mass fraction range of each of the modifying additives in the low dielectric constant ceramic material is: sb 2 O 3 0 to 1.2% of ZrO 2 0 to 1.0% of SrCO 3 0 to 0.8 percent of NiO, 0 to 1.5 percent of NiO and Nb 2 O 5 0 to 2.0% of SnO 2 0 to 1.1% of TiO 2 0 to 1.6%.
The invention also provides a preparation method of the low dielectric constant ceramic material, which comprises the following steps:
preparing rare earth Ln of one of main materials a O b (wherein Ln is selected from Y, Ce, Sm, Pr, La, Dy, Ho, Er or Nd) doping modified Mg 2+x Si 5+x Al 4-2x O 18 Powder: wherein 0<x<0.5, weighing corresponding mass of high-purity rare earth Ln according to the proportion of elements in the compound a O b Magnesium hydroxide, alumina and silicon dioxide are placed in a ball mill, and the solid materials are prepared from the following components in percentage by mass: 1 in water: (1.0-2.0) ratio ofAdding water, ball-milling and mixing uniformly, drying by using a spray drying tower or other methods after ball milling, calcining for 2-4 hours in an air atmosphere furnace at the temperature of 1100-1300 ℃, and finally obtaining modified Mg 2+x Si 5+ x Al 4-2x O 18 And (3) powder.
② preparing SnO of another component in the main material 2 ·TiO 2 Powder of the mixture: high purity, ultra-fine SnO 2 And TiO 2 Weighing the materials according to a molar ratio of 1:1, placing the materials in a ball mill, and mixing the materials according to the mass ratio: water 1: (1.0-2.0), adding water, performing ball milling and mixing uniformly, drying by using a spray drying tower or other methods after reaching a certain particle size, calcining for 1-2 hours in an air atmosphere furnace at the temperature of 1200-1250 ℃, and finally obtaining SnO 2 ·TiO 2 And (3) mixing the powder.
Preparing formula powder: two main material components obtained in the first step and the second step comprise rare earth Ln a O b Doping modified Mg 2+ x Si 5+x Al 4-2x O 18 With SnO 2 ·TiO 2 Mixture powder, and various modifying additives Sb 2 O 3 、ZrO 2 、SrCO 3 、NiO、Nb 2 O 5 、SnO 2 And TiO 2 The ceramic material is prepared by weighing one or more of the following components according to the formula of the low dielectric constant ceramic material, placing the weighed components in a ball mill, and mixing the components in percentage by mass as solid materials: water 1: (0.6-1.0) adding water for wet ball milling or sanding, and uniformly mixing the materials, so that the granularity D50 of the powder subjected to ball milling or sanding is 0.6-2.1um by using a laser particle sizer. And drying the mixture by using a spray drying tower or other methods after ball milling or sanding is finished to obtain the powdery low-dielectric-constant ceramic material.
The water added in the ball milling or sanding process is preferably deionized water, so that other metal ions in the water are prevented from being mixed into the material and affecting the microwave performance of the material.
Furthermore, the preparation method of the low dielectric constant ceramic material further comprises the following steps of preparing and molding the low dielectric constant ceramic material in a powder state:
and fourthly, adding a proper amount of adhesive, plasticizer, dispersant and the like into the powdery low-dielectric-constant ceramic material, ball-milling the mixture for 1 to 2 hours in a ball-milling tank by using zirconia balls as milling media to obtain slurry, and then carrying out centrifugal spray drying to obtain spherical particle powder with good fluidity. The adhesive can be polyvinyl alcohol, the plasticizer can be polyethylene glycol, and the dispersing agent can be carboxylic acid ammonium salt.
Pressing the spherical particle powder into a green device.
Sixthly, gel discharging: and (3) placing the green body device in a temperature range of 500-650 ℃, preserving heat for 16-32 hours, removing organic matters in a green body sheet to obtain a green body, wherein the temperature rise speed in the whole glue removing process is preferably less than 10 ℃/hour.
And (c) sintering: and sintering the green body after the binder removal in air, heating to 1320-1420 ℃ at a heating rate of 150-200 ℃/h, and keeping the temperature for 3-5 hours. Sintering can move the grain boundary of the powder particles in the ceramic body, the air holes are gradually eliminated, and the body shrinks into a compact ceramic body with certain strength.
And eighthly, annealing treatment: and after high-temperature sintering, reducing the furnace temperature to 950-1050 ℃, and preserving the heat for 2-3 hours to obtain the formed low-dielectric-constant ceramic material. Annealing can reduce the internal stress of the blank, refine crystal grains, close microcracks, improve the tissue structure of the material and improve the mechanical property of the ceramic.
Ninthly, testing the device: and performing microwave performance test at the frequency of 10-11GHz by adopting an Agilent network.
According to the test result: the temperature dielectric constant of the formed low-dielectric-constant ceramic material is between 4.5 and 6.5, and the temperature coefficient tau f (-40 to 85 ℃): +/-10 ppm/deg.C, and Qf value greater than or equal to 60000 GHz. And a low dielectric constant ceramic material is obtained.
The low dielectric constant ceramic material of the invention can be applied to the manufacture of microwave devices, including laminated antennas, dielectric antennas, filters, resonators and the like.
Examples
The present embodiment provides a low dielectric constant ceramic material for microwave devices and a method for preparing the same, and the present invention is not limited to the embodiments.
(1) According to rare earth Ln a O b Doping modified Mg 2+x Si 5+x Al 4-2x O 18 In which 0 is<x<0.5, weighing three groups of rare earth Ln with corresponding mass according to the raw material formula shown in Table 1 a O b The magnesium hydroxide, the alumina and the silicon dioxide are sequentially placed in a ball mill, and each group of solid materials comprises the following components in percentage by mass: deionized water 1: 1.5, adding deionized water for wet ball milling, drying by a spray drying tower after ball milling, and finally calcining for 3 hours at 1200 ℃ in an air furnace to obtain rare earth Ln a O b Doping modified Mg 2+x Si 5+x Al 4-2x O 18 And (3) powder. In each group of samples: in MSL1, x is 0.05; in MSL2, x is 0.2; in MSL3, x is 0.4.
TABLE 1 modified Mg 2+x Si 5+x Al 4-2x O 18 EXAMPLES formulations
(2) According to SnO 2 ·TiO 2 Composition of SnO 2 And TiO 2 The mixture is arranged in a ball mill according to the molar ratio of 1:1, and the mass ratio of the mixture is solid materials: deionized water 1: deionized water is added according to the proportion of 1.5 for wet ball milling, the mixture is evenly mixed, dried by a spray drying tower and calcined for 1.5 hours in an air furnace at the temperature of 1230 ℃.
(3) Based on rare earths Ln a O b Doped Mg 2+x Si 5+x Al 4-2x O 18 ·y(SnO 2 ·TiO 2 ) Wherein 0 is<x<0.5，0<y<0.20, specifically according to the chemical composition of the sample shown in Table 2, the modified Mg obtained in the step (1) was weighed 2+x Si 5+x Al 4-2x O 18 SnO obtained in step (2) 2 ·TiO 2 The mixture and various modified additives are placed in a ball mill in groups, and each group of samples is solid material according to mass ratio: deionized water 1: deionized water is added according to the proportion of 0.8 for wet sanding, the materials are required to be uniformly mixed, and the particle size D50 of the sanded powder is 0.60-2.10um according to the test of a laser particle sizer. And after sanding, adding a polyvinyl alcohol adhesive, a polyethylene glycol plasticizer and an ammonium carboxylate dispersant which respectively account for 0.5-3% of the total mass, and performing ball milling for 1-2 hours to obtain slurry. Drying the slurry by using a spray drying tower, and pressing the dried powder into cylindrical green compact wafers. Setting a temperature curve, and firstly placing the temperature curve in 600 ℃ for heat preservation for 24 hours to carry out glue discharging, wherein the heating rate in the whole glue discharging process is 10 ℃/hour; heating to 1320-1420 ℃ at the heating rate of 200 ℃/h, and preserving heat for 3 hours for sintering; and (3) after high-temperature sintering, keeping the temperature at 1000 ℃ for 2.5 hours to obtain the formed ceramic wafer with the low dielectric constant.
TABLE 2 chemical composition of low dielectric constant ceramic material samples
An Agilent network is adopted to carry out microwave performance test on the formed low dielectric constant ceramic material at the frequency of 10-11GHz, and the test results are listed in Table 3. The samples No. 1 to 15 in Table 3 were taken from the samples No. 1 to 15 in Table 2, and the same numbers correspond one to one.
TABLE 3 test results of various electrical properties of wafers made by sintering low-k ceramic material samples
As can be seen from Table 3, the ceramic material prepared by the above process can be in the temperature range of 1320-1420 ℃. The room temperature dielectric constant is 4.5-6.5, and the temperature coefficient tau f (-40-85 ℃) can be formed by adjusting the compounding ratio of the materials: the system ceramic material with +/-10 ppm/DEG C, the Qf value being more than or equal to 60000GHz and the microwave performance parameters being continuously adjustable can meet the application requirements of the microwave device on the temperature coefficient tau f (-40-85 ℃) with low dielectric constant and narrow fluctuation range.
The embodiments described above are some, but not all embodiments of the invention. The detailed description of the embodiments of the present invention is not intended to limit the scope of the claims, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the scope of the claimed invention.
Claims (10)
1. A low dielectric constant ceramic material for microwave devices comprises a main material and a modified additive, and is characterized in that: the main material is formed by passing through rare earth Ln a O b Doped Mg 2+x Si 5+x Al 4-2x O 18 With SnO after pre-sintering 2 ·TiO 2 Mixture composition doped Ln a O b Mg of (2) 2+x Si 5+x Al 4-2x O 18 ·y(SnO 2 ·TiO 2 ) Wherein 0 is<x<0.5，0<y<0.20, Ln is selected from Y, Ce, Sm, Pr, La, Dy, Ho, Er or Nd; the mass fraction of the main material in the low-dielectric-constant ceramic material is 98-99.5 wt%; the mass fraction of the modified additive in the low-dielectric-constant ceramic material is 0.5-2 wt%; the SnO 2 ·TiO 2 The mixture is made by SnO 2 With TiO 2 And the pre-burning is carried out according to the molar ratio of 1: 1.
2. The low dielectric constant ceramic material of claim 1, wherein: ln a O b The molar ratio of doping is Mg 2+x Si 5+x Al 4-2x O 18 1-3% of the molar weight.
3. The low dielectric constant ceramic material of claim 1, wherein: the modifying additive is selected from Sb 2 O 3 、ZrO 2 、SrCO 3 、NiO、Nb 2 O 5 、SnO 2 And TiO 2 One or more of them.
4. The low-dielectric-constant ceramic material of claim 3, wherein the mass fraction of each of the modifying additives in the low-dielectric-constant ceramic material is in the range of: sb 2 O 3 0 to 1.2% of ZrO 2 0 to 1.0% of SrCO 3 0 to 0.8 percent of NiO, 0 to 1.5 percent of NiO and Nb 2 O 5 0 to 2.0% of SnO 2 0 to 1.1% of TiO 2 0 to 1.6%.
5. A method for preparing a low dielectric constant ceramic material according to any of claims 1 to 4, comprising the steps of:
s1 solid-phase synthesis of rare earth Ln a O b Doped Mg 2+x Si 5+x Al 4-2x O 18 : will Ln a O b Mixing the magnesium hydroxide, the aluminum oxide and the silicon dioxide according to the proportion, grinding the mixture into uniform powder particles, and calcining the powder particles for 2 to 4 hours at the temperature of 1100 to 1300 ℃ in the air atmosphere to obtain Ln a O b Doped Mg 2+x Si 5+x Al 4-2x O 18 ；
S2, synthesizing SnO by solid phase method 2 ·TiO 2 The mixture is as follows: mixing tin oxide and titanium dioxide according to a ratio, grinding into uniform powder particles, and calcining at the temperature of 1200-1250 ℃ for 1-2 hours in air atmosphere to obtain SnO 2 ·TiO 2 Mixing;
s3, mixing Ln obtained in step S1 a O b Doped Mg 2+x Si 5+x Al 4-2x O 18 SnO obtained in step S2 2 ·TiO 2 The mixture and the modified additive are mixed according to the formula requirement and are ground into uniform powder particles, and the low dielectric constant ceramic material in a powder state is obtained.
6. The preparation method of claim 5, wherein in steps S1, S2 and S3, the uniform powder particles are ground, specifically, the solid material is put into a ball mill, water is added to the solid material for wet ball milling, the D50 particle size of the ball-milled powder particles is controlled to be 0.6-2.1um by controlling ball milling strength and ball milling time, and drying treatment is performed after ball milling.
7. The method of claim 5, further comprising the steps of:
s4, adding an adhesive, a plasticizer and a dispersing agent into the powder-state low-dielectric-constant ceramic material obtained in the step S3, performing ball milling for 1-2 hours to obtain slurry, drying to obtain powder, and pressing the powder into a green body;
s5, removing glue: heating the green body to 500-650 ℃, and preserving heat for 16-32 hours to obtain a green body;
s6, sintering: keeping the blank after the glue discharging at the temperature of 1320-1420 ℃ for 3-5 hours in an air atmosphere;
s7, annealing: and after sintering, keeping the temperature for 2-3 hours at 950-1050 ℃ to obtain the formed low-dielectric-constant ceramic material.
8. The method according to claim 7, wherein in step S4, the binder is polyvinyl alcohol, the plasticizer is polyethylene glycol, and the dispersant is an ammonium carboxylate salt.
9. The preparation method according to claim 7, wherein in the step S5, the temperature rising speed is controlled to be less than 10 ℃/h; and step S6, controlling the temperature rise speed to be 150-200 ℃/h.
10. The use of the low-k ceramic material according to any one of claims 1 to 4 for the manufacture of microwave devices, wherein the microwave devices comprise stacked antennas, dielectric antennas, filters and resonators.
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