CN112939595B - Microwave dielectric ceramic material with near-zero temperature coefficient at high temperature and preparation method thereof - Google Patents
Microwave dielectric ceramic material with near-zero temperature coefficient at high temperature and preparation method thereof Download PDFInfo
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- 229910010293 ceramic material Inorganic materials 0.000 title claims abstract description 66
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 47
- 239000000654 additive Substances 0.000 claims abstract description 20
- 239000000126 substance Substances 0.000 claims abstract description 17
- 230000000996 additive effect Effects 0.000 claims abstract description 15
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 14
- 229910052779 Neodymium Inorganic materials 0.000 claims abstract description 5
- 229910052746 lanthanum Inorganic materials 0.000 claims abstract description 5
- 239000000843 powder Substances 0.000 claims description 22
- 238000005245 sintering Methods 0.000 claims description 14
- 229920000178 Acrylic resin Polymers 0.000 claims description 12
- 239000004925 Acrylic resin Substances 0.000 claims description 12
- 238000000498 ball milling Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- 239000003292 glue Substances 0.000 claims description 9
- 238000001035 drying Methods 0.000 claims description 8
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 7
- 101100513612 Microdochium nivale MnCO gene Proteins 0.000 claims description 7
- 239000002270 dispersing agent Substances 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 7
- 238000002156 mixing Methods 0.000 claims description 7
- 239000004014 plasticizer Substances 0.000 claims description 7
- 239000002202 Polyethylene glycol Substances 0.000 claims description 6
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 6
- 229920001223 polyethylene glycol Polymers 0.000 claims description 6
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 5
- 239000012298 atmosphere Substances 0.000 claims description 5
- 238000007599 discharging Methods 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 4
- 239000011230 binding agent Substances 0.000 claims description 4
- 238000001354 calcination Methods 0.000 claims description 4
- 238000003825 pressing Methods 0.000 claims description 4
- 229910019440 Mg(OH) Inorganic materials 0.000 claims description 3
- -1 carboxylic acid ammonium salt Chemical class 0.000 claims description 3
- 239000002002 slurry Substances 0.000 claims description 3
- 238000007670 refining Methods 0.000 claims description 2
- 230000002194 synthesizing effect Effects 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 239000008204 material by function Substances 0.000 abstract description 2
- 238000012986 modification Methods 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 238000010532 solid phase synthesis reaction Methods 0.000 abstract 1
- 239000011777 magnesium Substances 0.000 description 13
- 238000001694 spray drying Methods 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 239000011343 solid material Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000003801 milling Methods 0.000 description 2
- 238000011056 performance test Methods 0.000 description 2
- 239000012798 spherical particle Substances 0.000 description 2
- 229910004762 CaSiO Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- YDZQQRWRVYGNER-UHFFFAOYSA-N iron;titanium;trihydrate Chemical group O.O.O.[Ti].[Fe] YDZQQRWRVYGNER-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229920002994 synthetic fiber Polymers 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
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Abstract
The invention provides a microwave dielectric ceramic material with a near-zero temperature coefficient at a high temperature and a preparation method thereof, relating to the field of information functional materials. The ceramic material comprises a base material and a modified additive, wherein the chemical expression of the base material is as follows: (Mg, ca, sr) x Ln 2y (Si,Ti)O 2+x+3y Wherein x is more than or equal to 0.80 and less than or equal to 1.20,0.00<Y is less than or equal to 0.03, ln is selected from one or more of La, Y, ce, sm, dy, ho, er and Nd; the mass fraction of the base material in the microwave dielectric ceramic material is 98.5-100 wt%; the mass fraction of the modified additive in the microwave dielectric ceramic material is 0-1.5 wt%. The material is a lead-free environment-friendly material, adopts solid-phase synthesis to synthesize a ceramic base material once, is supplemented with certain doping modification additives, and is used for manufacturing the dielectric constant of 17-25 of an electronic ceramic device, the quality factor is more than or equal to 40000GHz, and the temperature coefficient tau f (-55-125 ℃): less than +/-5 ppm/deg.C, and the temp. coefficient tau f less than +/-5 ppm/deg.C in the full temp. range of 180 deg.C. The material has good uniformity, is suitable for manufacturing microwave devices, and is particularly suitable for being used in environments with large temperature difference.
Description
Technical Field
The invention relates to the field of information functional materials, in particular to a microwave dielectric ceramic material with a near-zero temperature coefficient at high temperature and a preparation method thereof.
Background
The microwave dielectric ceramic material is a novel functional ceramic material which is rapidly developed in recent years. It has the characteristics of low dielectric loss, high dielectric constant epsilon, stable dielectric constant temperature coefficient tau f and the like. The material is a core basic material of a novel microwave circuit and a device including a dielectric resonator, a filter, an oscillator, a duplexer, an antenna, a dielectric substrate and the like, and has wide application in modern microwave communication and satellite navigation systems and equipment. In recent years, microwave technology equipment has rapidly developed toward miniaturization, integration and low power consumption, especially toward mass production and low price for civil use, and thus, microwave technology equipment is now developedA large array of microwave dielectric ceramic materials suitable for use in various microwave frequency bands have been developed. However, the current climate environment has high temperature, the high density integration and the limited heat dissipation capability in a small space range, and the microwave device itself generates heat, so that the problem that the temperature coefficient (tau f) of the microwave device is large at high temperature needs to be solved urgently>+/-5 ppm/DEG C) to improve the stability of the whole machine. For example, magnesium metatitanate (MgO. TiO) having an ilmenite structure 2 ) The microwave dielectric ceramic material is an important microwave dielectric ceramic material due to relatively cheap raw materials and excellent microwave performance, but the high-temperature coefficient is-50 ppm/DEG C, so that the practical application of the microwave dielectric ceramic material is influenced. In the dielectric constant range of 17-25, the temperature coefficient τ f is > +/-5 ppm/deg.C at 125 deg.C and over the entire temperature range of 180 deg.C, which is not favorable for use in complex temperature environments.
Disclosure of Invention
The invention aims to provide a microwave dielectric ceramic material with a near-zero temperature coefficient at a high temperature and a preparation method thereof, and aims to solve the problems that the conventional microwave dielectric ceramic material with a dielectric constant of 17-25 is large in temperature coefficient and poor in performance reliability. The invention adopts one-time synthesis of ceramic base material and a certain doping amount to obtain the microwave dielectric ceramic material with near-zero temperature coefficient at high temperature, and solves the problems of difficult production and large temperature coefficient of the microwave device in the dielectric constant range.
The invention adopts the following scheme to achieve the aim.
The invention firstly provides a microwave dielectric ceramic material with near-zero temperature coefficient at high temperature, which comprises a base material and a modified additive, wherein the chemical expression of the base material is as follows: (Mg, ca, sr) x Ln 2y (Si,Ti)O 2+x+3y Wherein x is more than or equal to 0.80 and less than or equal to 1.20,0.00<Y is less than or equal to 0.03, ln is selected from one or more of La, Y, ce, sm, dy, ho, er and Nd; the mass fraction of the base material in the microwave dielectric ceramic material is 98.5-100 wt%; the mass fraction of the modified additive in the microwave dielectric ceramic material is 0-1.5 wt%. (Mg, ca, sr) x It is expressed to include Mg, ca and Sr elements, and their sum of coefficients in the chemical expression is x. (Si, ti) means including Si and Ti elements, and they are formedThe sum of the coefficients in the chemical expression is 1. The valences of Ln in the chemical expression are all + 3.
As a further improvement of the microwave dielectric ceramic material, the modified additive is selected from Sb 2 O 3 、ZnO、 MnCO 3 、BaCO 3 、Al 2 O 3 、Nb 2 O 5 、ZrO 2 、Cr 2 O 3 、Fe 2 O 3 One or more of (a).
As a further improvement of the microwave dielectric ceramic material, the mass fraction range of each modified additive in the microwave dielectric ceramic material is as follows: sb 2 O 3 0 to 1.0 percent of ZnO, 0 to 1.0 percent of MnCO 3 0 to 1.0 percent of BaCO 3 0 to 1.0% of Al 2 O 3 0 to 1.0%, nb 2 O 5 0 to 1.0% of ZrO 2 0 to 1.0 percent of Cr 2 O 3 0 to 0.3% of Fe 2 O 3 0 to 0.3 percent.
As a further improvement of the microwave dielectric ceramic material, in the chemical expression of the base material, the subscript coefficient of Mg is 0.6-0.9, the subscript coefficient of Ca is 0.05-0.25, and the subscript coefficient of Sr is 0.0005-0.15.
As a further improvement of the microwave dielectric ceramic material, the subscript coefficient of Si is 0.2-0.5, and the subscript coefficient of Ti is 0.5-0.8.
The invention secondly provides a preparation method of the microwave dielectric ceramic material, which comprises the following steps:
s1, synthesizing base material (Mg, ca, sr) x Ln 2y (Si,Ti)O 2+x+3y Wherein x is more than or equal to 0.80 and less than or equal to 1.20,0.00<y is less than or equal to 0.03: will Ln 2 O 3 、Mg(OH) 2 、CaCO 3 、SrCO 3 、SiO 2 And TiO 2 Mixing according to the proportion, carrying out wet ball milling, and calcining for 2-4 hours at the temperature of 1150-1250 ℃ in air atmosphere to obtain an initial base material;
and S2, mixing the initial base material obtained in the step S1 with the modified additive, adding water, performing wet ball milling, performing uniform refining treatment, and drying the ball-milled material to obtain the powder microwave dielectric ceramic material.
As a further improvement of the preparation method of the microwave dielectric ceramic material, in the step S2, the particle size of the ball-milled material is 0.6-1.5 μm.
As a further improvement of the preparation method of the microwave dielectric ceramic material, the preparation method also comprises the following steps:
s3, adding a binder, a plasticizer and a dispersant into the microwave dielectric ceramic material in a powder state, performing ball milling for 1-2 hours to obtain slurry, drying to obtain powder, and pressing the powder into a green body;
s4, removing glue: placing the green body in a temperature of 500-650 ℃, and preserving heat for 16-32 hours to obtain a green body;
s5, sintering: keeping the blank after the glue discharging at 1280-1390 ℃ for 3-5 hours in air atmosphere;
s6, annealing: after sintering, keeping the temperature for 1 to 2 hours within the range of 950 to 1050 ℃ to obtain the formed microwave dielectric ceramic material.
As a further improvement of the preparation method of the microwave dielectric ceramic material, the adhesive is polyvinyl alcohol or acrylic resin or a mixture of the polyvinyl alcohol and the acrylic resin, the plasticizer is polyethylene glycol or the acrylic resin or a mixture of the polyethylene glycol and the acrylic resin, and the dispersing agent is carboxylic acid ammonium salt.
As a further improvement of the preparation method of the microwave dielectric ceramic material, the heating rate of the glue discharging process of the step S4 is less than 10 ℃/h, and the heating rate of the sintering process of the step S5 is 150-200 ℃/h.
The formed microwave dielectric ceramic material has Wen Jiedian constant of 17-25 and temperature coefficient tau f (-55-125 ℃): +/-5 ppm/deg.C and Qf not less than 40000GHz.
The beneficial effects of the invention are: the base material is synthesized at one time, the problem of poor material uniformity caused by mixing of a plurality of synthetic materials is solved, the problem of poor stability of a prepared microwave device in a complex temperature environment due to the temperature coefficient of being more than +/-5 ppm/DEG C at a high temperature (125 ℃) is solved, and the prepared powdery microwave dielectric ceramic material has good material uniformity and meets the requirements of the microwave device. The powder is sintered at 1280-1390 ℃ to obtain the microwave dielectric ceramic device with microwave performance. The ceramic material can form a ceramic material with a room temperature dielectric constant of 17-25, a Qf value of more than or equal to 40000GHz and a temperature coefficient tau f (-55-125 ℃): less than +/-5 ppm/DEG C, and the full temperature is 180℃: less than +/-5 ppm/DEG C, meets the manufacturing requirement of microwave devices (such as filters, antenna sheets and the like), and is particularly suitable for being used in an environment with large temperature difference.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. The examples, in which specific conditions are not specified, were conducted under conventional conditions or conditions recommended by the manufacturer. The reagents or instruments used are not indicated by the manufacturer, and are all conventional products available commercially.
The invention firstly provides a microwave dielectric ceramic material with near-zero temperature coefficient at high temperature, which comprises a base material and a modified additive, wherein the chemical expression of the base material is as follows: (Mg, ca, sr) x Ln 2y (Si,Ti)O 2+x+3y Wherein x is more than or equal to 0.80 and less than or equal to 1.20,0.00<Y is less than or equal to 0.03, ln is selected from one or more of La, Y, ce, sm, dy, ho, er and Nd; the mass fraction of the base material in the microwave dielectric ceramic material is 98.5-100 wt%; the mass fraction of the modified additive in the microwave dielectric ceramic material is 0-1.5 wt%. (Mg, ca, sr) x It is expressed to include Mg, ca and Sr elements, and their sum of coefficients in the chemical expression is x. (Si, ti) means that Si and Ti are included and the sum of their coefficients in the chemical expression is 1. The valences of Ln in the chemical expression are all + 3.
Wherein the modifying additive is selected from Sb 2 O 3 、ZnO、MnCO 3 、BaCO 3 、Al 2 O 3 、Nb 2 O 5 、 ZrO 2 、Cr 2 O 3 、Fe 2 O 3 One or more of (a).
Wherein,the mass fraction range of each modified additive in the microwave dielectric ceramic material is as follows: sb 2 O 3 0 to 1.0 percent of ZnO, 0 to 1.0 percent of MnCO 3 0 to 1.0 percent of BaCO 3 0 to 1.0% of Al 2 O 3 0 to 1.0%, nb 2 O 5 0 to 1.0% of ZrO 2 0 to 1.0 percent of Cr 2 O 3 0 to 0.3% of Fe 2 O 3 0 to 0.3 percent.
Wherein in the chemical expression of the base material, the subscript coefficient of Mg is 0.6-0.9, the subscript coefficient of Ca is 0.05-0.25, and the subscript coefficient of Sr is 0.0005-0.15.
Wherein the subscript coefficient of Si is 0.2 to 0.5 and the subscript coefficient of Ti is 0.5 to 0.8.
The invention also provides a preparation method of the microwave dielectric ceramic material, which comprises the following steps:
(1) preparing base material powder: corresponding Ln is weighed according to the proportion of each metal element in the compound 2 O 3 (wherein Ln is selected from one or more of La, Y, ce, sm, dy, ho, er and Nd), mg (OH) 2 、 CaCO 3 、SrCO 3 、SiO 2 、TiO 2 Placing the mixture into a ball mill, and taking the solid materials according to the mass ratio: water =1: (1.0-2.0), adding water according to the proportion, ball-milling and mixing uniformly, drying by using a spray drying tower or other methods after sand milling treatment reaches a certain particle size (the particle size D50 is 0.6-1.5 mu m under a laser particle size analyzer), calcining for 2-4 hours in an air atmosphere furnace at the temperature of 1150-1250 ℃, and finally obtaining the chemical expression: (Mg, ca, sr) x Ln 2y (Si,Ti)O 2+x+3y A starting base powder. Wherein, mg (OH) 2 The raw material preferably has a specific surface area of more than 8.0m 2 Powder of/g, tiO 2 The raw material preferably has a specific surface area of more than 7.0m 2 Powder per gram.
(2) Preparing formula powder: mixing the initial base powder obtained in (1) with various modifying additives Sb 2 O 3 、ZnO、MnCO 3 、BaCO 3 、Al 2 O 3 、Nb 2 O 5 、ZrO 2 、Cr 2 O 3 、Fe 2 O 3 One or more of the microwave dielectric ceramic materials are weighed according to the formula of the microwave dielectric ceramic materials, placed in a ball mill and prepared into solid materials according to the mass ratio: water =1: (0.6-1.0) adding water for wet sanding, wherein the materials are required to be uniformly mixed, and the average particle size of the sanded powder is 0.60-1.5 mu m by using a laser particle sizer. And drying by using a spray drying tower or other methods after the ball milling is finished to obtain the powdery microwave dielectric ceramic material.
Further, the preparation method of the microwave dielectric ceramic material of the invention also comprises the following steps:
(3) adding proper adhesive, plasticizer, dispersant and the like into the microwave dielectric ceramic material in the powder state, using zirconia balls as milling media to perform ball milling in a ball milling tank for 1-2 hours to obtain slurry, and performing centrifugal spray drying to obtain spherical particle powder with good fluidity.
In a preferred mode, the adhesive is polyvinyl alcohol or acrylic resin or a mixture of the polyvinyl alcohol and the acrylic resin, the plasticizer is polyethylene glycol or acrylic resin or a mixture of the polyethylene glycol and the acrylic resin, and the dispersing agent is carboxylic acid ammonium salt.
(4) Pressing the spherical particle powder into a green device.
(5) And (3) placing the green device in a temperature range of 500-650 ℃, preserving heat for 16-32 hours, removing organic matters in the green sheet, and requiring the temperature rise speed of the whole glue removing process to be less than 10 ℃/hour.
(6) And (3) sintering: sintering the green body after the glue removal in air, raising the temperature to 1280-1390 ℃ at the temperature rise speed of 150-200 ℃/h, and keeping the temperature for 3-5 h. Sintering can move the grain boundary of the powder particles in the ceramic body, the air holes are gradually eliminated, and the body shrinks into a compact ceramic body with certain strength.
(7) And (3) annealing treatment: after high-temperature sintering, keeping the furnace temperature within the range of 950-1050 ℃ for 1-2 hours to obtain the formed microwave dielectric ceramic material. Annealing can reduce the internal stress of the blank, refine crystal grains, close microcracks, improve the tissue structure of the material and improve the mechanical property of the ceramic.
(8) And (3) testing a device: and performing microwave performance test at the frequency of 5-8GHz by adopting an Agilent network.
According to the test result: the formed microwave dielectric ceramic material has the Wen Jiedian constant between 17 and 25 and the temperature coefficient tau f (-55 to 125 ℃): +/-5 ppm/deg.C, and Qf value greater than or equal to 40000GHz.
Due to MgO-SiO 2 Has low dielectric constant (< 8.5) and high Qf value (> 200000 GHz), but has tf value of about-60 ppm/DEG C, so that the material with positive temperature coefficient needs to be doped to ensure the temperature stability of the microwave device so as to meet the practical requirement of electronic circuits, and the CaSiO is used for passing through 3 ，CaTiO 3 Or CaSiTiO 3 The equal regulation is mainly used, besides ensuring lower sintering temperature, tau f can be approached to zero, but the combination of the type can realize that the dielectric constant 20 is at the level and the temperature coefficient tau f is at the temperature (-55℃～25℃) -τf (125℃-25℃) > +/-10 ppm/deg.C. The invention is in CaTiO 3 On the basis of the above-mentioned material Ln and Sr elements and single CaTiO are introduced 3 Adjusting temperature coefficient ratio of (Ca, sr) O-Ln 2 O 3 -TiO 2 Besides high dielectric constant and positive temperature coefficient, the material has high quality factor, and as the (Ca, sr)/Ln changes, the frequency approaches to 25 ℃ frequency point to different extent at different temperatures, thereby causing tauf (-55℃～25℃) ≤±5ppm/℃，τf (125℃-25℃) Less than or equal to +/-5 ppm/DEG C, and can realize tau f (-55℃～25℃) -τf (125℃-25℃) Variation within + -10 ppm/DEG C. The base material is mixed and calcined once, so that the industrial and economic properties are greatly improved, and the operation complexity is reduced.
Examples
The present embodiment provides a microwave dielectric ceramic material with a near-zero temperature coefficient at a high temperature and a preparation method thereof, and the scheme of the present invention is not limited to the embodiments.
(1) According to the chemical expression: (Mg, ca, sr) x Ln 2y (Si,Ti)O 2+x+3y Wherein x is more than or equal to 0.80 and less than or equal to 1.20 and 0.00<y is less than or equal to 0.03, and the raw material formula is shown in Table 1Weighing three groups of Ln with corresponding mass 2 O 3 、Mg(OH) 2 、 CaCO 3 、SrCO 3 、SiO 2 And TiO 2 Sequentially placing the materials in a ball mill, wherein each group of solid materials comprises the following components in percentage by mass: deionized water =1:1.5, adding deionized water for wet ball milling, drying by a spray drying tower after ball milling, and calcining for 3 hours at 1240 ℃ in an air furnace. In each group of samples: in MSCT1, x =0.85, y =0.03; in MSCT2, x =0.95, y =0.02; in MSCT3, x =1.05, y =0.01.
TABLE 1 (Mg, ca, sr) x Ln 2y (Si,Ti)O 2+x+3y EXAMPLES formulations
(2) Weighing the base material obtained in the step (1) and various modified additives according to the chemical compositions of the samples in the table 2, placing the base material and the modified additives into a ball mill in groups, and taking the solid materials according to the mass ratio of each group: deionized water =1: deionized water is added according to the proportion of 0.8 for wet sanding, the materials are required to be uniformly mixed, and the average particle size of the sanded powder is 0.60-1.5 mu m by using a laser particle sizer. After sanding, adding an adhesive, a plasticizer and a dispersant which respectively account for 0.5-6% of the total mass, drying by a spray drying tower after uniform dispersion, and pressing the dried powder into a cylindrical green compact wafer; setting a temperature curve, and firstly placing the temperature curve in 600 ℃ for heat preservation for 24 hours to carry out glue discharging, wherein the heating rate of the whole glue discharging process is 8 ℃/hour; then heating to 1285-1385 ℃ at the heating rate of 150 ℃/h, preserving the heat for 3 h and sintering; and (4) after high-temperature sintering, keeping the temperature at 1000 ℃ for 1.5 hours to obtain the formed microwave dielectric ceramic material resonant column.
TABLE 2 chemical composition of microwave dielectric ceramic material samples
The microwave performance test was performed on the formed microwave dielectric ceramic material, and the test results are shown in table 3. Samples No. 1 to 15 in table 3 were taken from samples No. 1 to 15 in table 2, and the same numbers correspond one to one.
Table 3 test results of various electrical properties of the resonant column made by sintering the microwave dielectric ceramic material sample
As can be seen from Table 3, the formed ceramic material produced by the above process can be in the temperature range of 1285 ℃ to 1385 ℃. The dielectric constant at room temperature is between 17 and 22, and the temperature coefficient tau f (-55 to 125 ℃) is formed by adjusting the compounding ratio of the materials: the ceramic material has a temperature coefficient close to 0 at a low temperature of-55 ℃ and a high temperature of 125 ℃, a qf value of more than or equal to 40000GHz, and microwave performance parameters can be continuously adjusted, so that the application requirements of medium and low room temperature dielectric constants of microwave devices and low temperature coefficients can be met in complex temperature environments (55-125 ℃), the bending strength of the ceramic material can reach more than 200MPa, and the problem of large frequency deviation caused by severe outdoor environments can be solved.
The embodiments described above are some, but not all embodiments of the invention. The detailed description of the embodiments of the present invention is not intended to limit the scope of the claims, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Claims (8)
1. A microwave dielectric ceramic material with near-zero temperature coefficient at high temperature comprises a base material and a modified additive, and is characterized in that: the chemical expression of the base material is as follows: (Mg, ca, sr) x Ln 2y (Si,Ti)O 2+x+3y Wherein x is more than or equal to 0.80 and less than or equal to 1.20,0.00<Y is less than or equal to 0.03, ln is selected from one or more of La, Y, ce, sm, dy, ho, er and Nd; the mass fraction of the base material in the microwave dielectric ceramic material is 98.5-100 wt%; the modifying additive is in the microwaveThe mass fraction of the dielectric ceramic material is 0-1.5 wt%;
in the chemical expression of the base material, the subscript coefficient of Mg is 0.6-0.9, the subscript coefficient of Ca is 0.05-0.25, and the subscript coefficient of Sr is 0.0005-0.15;
the index coefficient of Si is 0.2-0.5, and the index coefficient of Ti is 0.5-0.8.
2. A microwave dielectric ceramic material according to claim 1, wherein: the modifying additive is selected from Sb 2 O 3 、ZnO、MnCO 3 、BaCO 3 、Al 2 O 3 、Nb 2 O 5 、ZrO 2 、Cr 2 O 3 、Fe 2 O 3 One or more of (a).
3. A microwave dielectric ceramic material as claimed in claim 2, wherein the mass fraction of each of the modifying additives in the microwave dielectric ceramic material is: sb 2 O 3 0 to 1.0 percent of ZnO, 0 to 1.0 percent of MnCO 3 0 to 1.0 percent of BaCO 3 0 to 1.0% of Al 2 O 3 0 to 1.0%, nb 2 O 5 0 to 1.0% of ZrO 2 0 to 1.0 percent of Cr 2 O 3 0 to 0.3% of Fe 2 O 3 0 to 0.3 percent.
4. A method for preparing a microwave dielectric ceramic material as claimed in any one of claims 1 to 3, comprising the steps of:
s1, synthesizing base material (Mg, ca, sr) x Ln 2y (Si,Ti)O 2+x+3y Wherein x is more than or equal to 0.80 and less than or equal to 1.20,0.00<y is less than or equal to 0.03: will Ln 2 O 3 、Mg(OH) 2 、CaCO 3 、SrCO 3 、SiO 2 And TiO 2 2 Mixing according to the proportion, carrying out wet ball milling, and calcining for 2-4 hours at the temperature of 1150-1250 ℃ in air atmosphere to obtain an initial base material;
and S2, mixing the initial base material obtained in the step S1 with the modified additive, adding water, performing wet ball milling, performing uniform refining treatment, and drying the ball-milled material to obtain the powder microwave dielectric ceramic material.
5. The method according to claim 4, wherein in the step S2, the particle size of the ball-milled material is 0.6 to 1.5 μm.
6. The method of claim 4, further comprising the steps of:
s3, adding a binder, a plasticizer and a dispersant into the microwave dielectric ceramic material in a powder state, performing ball milling for 1-2 hours to obtain slurry, drying to obtain powder, and pressing the powder into a green body;
s4, removing glue: placing the green body in a temperature of 500-650 ℃, and preserving heat for 16-32 hours to obtain a green body;
s5, sintering: keeping the blank after the glue discharging at 1280-1390 ℃ for 3-5 hours in air atmosphere;
s6, annealing: after sintering, keeping the temperature for 1 to 2 hours within the range of 950 to 1050 ℃ to obtain the formed microwave dielectric ceramic material.
7. The preparation method according to claim 6, wherein the binder is polyvinyl alcohol or acrylic resin or a mixture of the polyvinyl alcohol and the acrylic resin, the plasticizer is polyethylene glycol or acrylic resin or a mixture of the polyethylene glycol and the acrylic resin, and the dispersant is carboxylic acid ammonium salt.
8. The preparation method according to claim 6, wherein the heating rate in the binder removal process of step S4 is less than 10 ℃/hr, and the heating rate in the sintering process of step S5 is 150-200 ℃/hr.
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