CN112266238A - Low dielectric constant ceramic material for microwave device and preparation method thereof - Google Patents

Low dielectric constant ceramic material for microwave device and preparation method thereof Download PDF

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CN112266238A
CN112266238A CN202011145097.7A CN202011145097A CN112266238A CN 112266238 A CN112266238 A CN 112266238A CN 202011145097 A CN202011145097 A CN 202011145097A CN 112266238 A CN112266238 A CN 112266238A
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ceramic material
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sno
dielectric constant
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CN112266238B (en
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杨和成
张军志
罗昌宸
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Xiamen Sunyear Electronics Co ltd
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Abstract

The invention provides a low dielectric constant ceramic material for a microwave device, and relates to the field of information functional materials. The ceramic material comprises a main material and a modified additive. The main material is made of rare earth LnaObDoped Mg2+xSi5+xAl4‑2xO18With SnO after pre-sintering2·TiO2Mixture composition doped LnaObMg of (2)2+xSi5+xAl4‑2xO18·y(SnO2·TiO2) Wherein 0 is<x<0.5，0<y<0.20, Ln is selected from Y, Ce, Sm, Pr, La, Dy, Ho, Er or Nd. The mass fraction of the main material in the low-dielectric-constant ceramic material is 98-99.5 wt%, and the mass fraction of the modified additive in the low-dielectric-constant ceramic material is 0.5-2 wt%. The ceramic material is a lead-free environment-friendly material, and is prepared by synthesizing main material components by a solid-phase synthesis method, doping, modifying and addingThe material is reasonably designed and optimized in synthesis process, the powder with the granularity D50 of 0.6-2.10um is used for manufacturing the electronic ceramic device, the electronic ceramic device can be sintered into ceramic within the temperature range of 1320-1420 ℃, the room temperature dielectric constant epsilon of the electronic ceramic device is between 4.5 and 6.5, the quality factor Qf value is more than or equal to 60000GHz, and the temperature coefficient tau f (-40-85 ℃): 10 ppm/DEG C.

Description

Low dielectric constant ceramic material for microwave device and preparation method thereof
Technical Field
The invention relates to the field of information functional materials, in particular to a low dielectric constant ceramic material for a microwave device and a preparation method and application thereof.
Background
The microwave dielectric ceramic material is a novel functional ceramic material which is rapidly developed in recent years. It has the characteristics of low dielectric loss, high dielectric constant epsilon, stable dielectric constant temperature coefficient tau f and the like. The material is a core basic material of a novel microwave circuit and a device including a dielectric resonator, a filter, an oscillator, a duplexer, an antenna, a dielectric substrate and the like, and has wide application in modern microwave communication and satellite navigation systems and equipment. With the progress of mobile communication and radar technologies, microwave electronic components are gradually developed towards high frequency, and microwave dielectric ceramic materials with low dielectric constants become research hotspots more and more. However, the dielectric constant of the existing microwave dielectric ceramic material is high, or the dielectric constant is low but the temperature coefficient of the resonant frequency is high, and the performance is unstable.
Disclosure of Invention
The invention aims to provide a low dielectric constant ceramic material for a microwave device and a preparation method thereof, so as to meet the requirements of the microwave device on the low dielectric constant and the low resonant frequency temperature coefficient of the used material.
The invention adopts the following scheme to achieve the aim.
A low-dielectric-constant ceramic material for microwave devices comprises a main material and a modifying additive. The main material is formed by passing through rare earth LnaObDoped Mg2+xSi5+xAl4-2xO18With SnO after pre-sintering2·TiO2Mixture composition doped LnaObMg of (2)2+ xSi5+xAl4-2xO18·y(SnO2·TiO2) Wherein 0 is<x<0.5，0<y<0.20, Ln is selected from Y, Ce, Sm, Pr, La, Dy, Ho, Er or Nd; the mass fraction of the main material in the low-dielectric-constant ceramic material is 98-99.5 wt%; the mass fraction of the modified additive in the low-dielectric-constant ceramic material is 0.5-2 wt%.
Further, rare earth LnaObThe molar ratio of doping is Mg2+xSi5+xAl4-2xO181-3% of the molar weight.
Further, the modifying additive is selected from Sb2O3、ZrO2、SrCO3、NiO、Nb2O5、SnO2And TiO2One or more of them.
Further, the mass fraction range of each modified additive in the low dielectric constant ceramic material is as follows: sb2O30 to 1.2% of ZrO20 to 1.0% of SrCO30 to 0.8 percent of NiO, 0 to 1.5 percent of NiO and Nb2O50 to 2.0% of SnO20 to 1.1% of TiO20 to 1.6%.
The invention also provides a preparation method of the low dielectric constant ceramic material, which comprises the following steps:
s1 solid-phase synthesis of rare earth LnaObDoped Mg2+xSi5+xAl4-2xO18: will LnaObMixing the magnesium hydroxide, the aluminum oxide and the silicon dioxide according to the proportion, grinding the mixture into uniform powder particles, and calcining the powder particles for 2 to 4 hours at the temperature of 1100 to 1300 ℃ in the air atmosphere to obtain LnaObDoped Mg2+xSi5+xAl4-2xO18；
S2 SnO synthesis by solid phase method2·TiO2The mixture is as follows: mixing tin oxide and titanium dioxide according to a ratio, grinding into uniform powder particles, and calcining at the temperature of 1200-1250 ℃ for 1-2 hours in air atmosphere to obtain SnO2·TiO2Mixing;
s3, mixing Ln obtained in step S1aObDoped Mg2+xSi5+xAl4-2xO18SnO obtained in step S22·TiO2The mixture and the modified additive are mixed according to the formula requirement and are ground into uniform powder particles, and the low dielectric constant ceramic material in a powder state is obtained.
Further, in steps S1, S2 and S3, the powder is ground into uniform particles, specifically, the solid material is put into a ball mill, water is added to the solid material for wet ball milling, the particle size of D50 of the ball-milled particles is controlled to be 0.6 to 2.1um by controlling the ball milling strength and the ball milling time, and the ball-milled particles are dried.
Further, the preparation method also comprises the following steps:
s4, adding an adhesive, a plasticizer and a dispersing agent into the powder-state low-dielectric-constant ceramic material obtained in the step S3, performing ball milling for 1-2 hours to obtain slurry, drying to obtain powder, and pressing the powder into a green body;
s5, removing glue: heating the green body to 500-650 ℃, and preserving heat for 16-32 hours to obtain a green body;
s6, sintering: keeping the blank after the glue discharging at the temperature of 1320-1420 ℃ for 3-5 hours in an air atmosphere;
s7, annealing: and after sintering, keeping the temperature for 2-3 hours at 950-1050 ℃ to obtain the formed low-dielectric-constant ceramic material.
Further, in step S4, the binder is polyvinyl alcohol, the plasticizer is polyethylene glycol, and the dispersant is ammonium carboxylate.
Further, in the glue discharging process of the step S5, the temperature rising speed is controlled to be less than 10 ℃/hour; and step S6, controlling the temperature rise speed to be 150-200 ℃/h.
The room-temperature dielectric constant of the low-dielectric-constant ceramic material obtained by the preparation method is 4.5-6.5, and the temperature coefficient tau f (-40-85 ℃): +/-10 ppm/deg.C, and Qf value greater than or equal to 60000 GHz.
The invention finally provides an application approach of the low dielectric constant ceramic material, which is applied to manufacturing microwave devices, wherein the microwave devices comprise laminated antennas, dielectric antennas, filters and resonators.
Mg in the main Material of the invention2+xSi5+xAl4-2xO18When x is 0, the chemical formula is Mg2Si5Al4O18。Mg2Si5Al4O18The ceramic has excellent dielectric property in microwave frequency band, has dielectric constant of about 5.5, and is prepared from SiO2The amount of the organic acid is increased and becomes smaller,has better temperature coefficient of resonant frequency within-30 ppm/DEG C, but has a Qf value of about 40000, and relatively low value, which affects the practical application of the material by using rare earth LnaOb(where Ln is selected from Y, Ce, Sm, Pr, La, Dy, Ho, Er, Nd, etc.) and modifying to reduce Mg2Si5Al4O18The crystal phase internal defects greatly improve the Qf value of the crystal phase, and the maximum value can reach 120000. SnTiO3Is a ferroelectric material with perovskite structure, is difficult to synthesize, but is SnO2With TiO2SnO is obtained after pre-sintering with the molar number of 1:12·TiO2The mixture has stable chemical property and physical property, and can effectively improve Mg2Si5Al4O18The temperature coefficient of the ceramic and the temperature coefficient is made adjustable. The two materials are mixed according to a certain proportion, and a certain amount of auxiliary materials are added, so that the low-dielectric-constant ceramic material with low dielectric constant and temperature coefficient within +/-10 ppm/DEG C and good performance can be obtained.
The invention has the beneficial effects that: the ceramic material of the invention is a lead-free environment-friendly material, which is prepared by mixing rare earth LnaOb(where Ln is selected from Y, Ce, Sm, Pr, La, Dy, Ho, Er, Nd, etc.)2+xSi5+xAl4-2xO18SnO after presintering2·TiO2And modifying additives are combined to prepare the powdery low dielectric constant ceramic material with good material uniformity and meeting the requirements of microwave devices, and the chemical formula of the powdery low dielectric constant ceramic material is doped LnaObMg of (2)2+xSi5+xAl4-2xO18·y(SnO2·TiO2) Wherein 0 is<x<0.5，0<y<0.20. The ceramic material with low dielectric constant is obtained after sintering the powder-state ceramic material with low dielectric constant at the temperature of 1320-1420 ℃. The ceramic material can form a ceramic material with a room temperature dielectric constant of 4.5-6.5, a Qf value of more than or equal to 60000GHz and a temperature coefficient tau f (-40-85 ℃): +/-10 ppm/DEG C, and can meet the microwave performance requirement of the microwave device.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. The examples, in which specific conditions are not specified, were conducted under conventional conditions or conditions recommended by the manufacturer. The reagents or instruments used are not indicated by the manufacturer, and are all conventional products available commercially.
The low dielectric constant ceramic material for microwave device includes main material and modifying additive. The main material is formed by passing through rare earth LnaObDoped Mg2+xSi5+xAl4-2xO18With SnO after pre-sintering2·TiO2Mixture composition doped LnaObMg of (2)2+xSi5+xAl4-2xO18·y(SnO2·TiO2) Wherein 0 is<x<0.5，0<y<0.20, Ln is selected from Y, Ce, Sm, Pr, La, Dy, Ho, Er or Nd; the mass fraction of the main material in the low-dielectric-constant ceramic material is 98-99.5 wt%; the mass fraction of the modified additive in the low-dielectric-constant ceramic material is 0.5-2 wt%.
Wherein, for rare earth LnaObMay be Y2O3、CeO2、Sm2O3、Pr6O11、La2O3、Dy2O3、Ho2O3、Er2O3Or Nd2O3。
Preferably, rare earth LnaObThe molar ratio of doping is Mg2+xSi5+xAl4-2xO181-3% of the molar weight.
Preferably, the modifying additive is selected from Sb2O3、ZrO2、SrCO3、NiO、Nb2O5、SnO2And TiO2One or more of them. The modified additive can adjust the microwave performance of the ceramic material, reduce the range of the temperature coefficient tau f, improve the quality factor, reduce the dielectric constant and improve the microwave performance of the material.
Preferably, the mass fraction range of each of the modifying additives in the low dielectric constant ceramic material is: sb2O30 to 1.2% of ZrO20 to 1.0% of SrCO30 to 0.8 percent of NiO, 0 to 1.5 percent of NiO and Nb2O50 to 2.0% of SnO20 to 1.1% of TiO20 to 1.6%.
The invention also provides a preparation method of the low dielectric constant ceramic material, which comprises the following steps:
preparing rare earth Ln of one of main materialsaOb(wherein Ln is selected from Y, Ce, Sm, Pr, La, Dy, Ho, Er or Nd) doping modified Mg2+xSi5+xAl4-2xO18Powder: wherein 0<x<0.5, weighing corresponding mass of high-purity rare earth Ln according to the proportion of elements in the compoundaObMagnesium hydroxide, alumina and silicon dioxide are placed in a ball mill, and the solid materials are prepared from the following components in percentage by mass: water 1: (1.0-2.0), adding water, performing ball milling, uniformly mixing, drying by using a spray drying tower or other methods after ball milling, and calcining for 2-4 hours at the temperature of 1100-1300 ℃ in an air atmosphere furnace to finally obtain modified Mg2+xSi5+ xAl4-2xO18And (3) powder.
② preparing SnO of another component in the main material2·TiO2Powder of the mixture: high purity, ultra-fine SnO2And TiO2Weighing the materials according to a molar ratio of 1:1, placing the materials in a ball mill, and mixing the materials according to the mass ratio: water 1: (1.0-2.0), adding water in a certain proportion, ball-milling and uniformly mixing, drying by using a spray drying tower or other methods after reaching a certain particle size, calcining for 1-2 hours in an air atmosphere furnace at the temperature of 1200-1250 ℃, and finally obtaining SnO2·TiO2And (3) mixing the powder.
Preparing formula powder: two main material components obtained in the first step and the second step comprise rare earth LnaObDoping modified Mg2+ xSi5+xAl4-2xO18With SnO2·TiO2Mixture powder, and various modifying additives Sb2O3、ZrO2、SrCO3、NiO、Nb2O5、SnO2And TiO2The ceramic material is prepared by weighing one or more of the following components according to the formula of the low dielectric constant ceramic material, placing the weighed components in a ball mill, and mixing the components in percentage by mass as solid materials: water 1: (0.6-1.0) adding water for wet ball milling or sanding, and uniformly mixing the materials, so that the granularity D50 of the powder subjected to ball milling or sanding is 0.6-2.1um by using a laser particle sizer. And drying the mixture by using a spray drying tower or other methods after ball milling or sanding is finished to obtain the powdery low-dielectric-constant ceramic material.
The water added in the ball milling or sanding process is preferably deionized water, so that other metal ions in the water are prevented from being mixed into the material and affecting the microwave performance of the material.
Furthermore, the preparation method of the low dielectric constant ceramic material further comprises the following steps of preparing and molding the low dielectric constant ceramic material in a powder state:
and fourthly, adding a proper amount of adhesive, plasticizer, dispersant and the like into the powdery low-dielectric-constant ceramic material, ball-milling the mixture for 1 to 2 hours in a ball-milling tank by using zirconia balls as milling media to obtain slurry, and then carrying out centrifugal spray drying to obtain spherical particle powder with good fluidity. The adhesive can be polyvinyl alcohol, the plasticizer can be polyethylene glycol, and the dispersing agent can be carboxylic acid ammonium salt.
Pressing the spherical particle powder into a green device.
Sixthly, gel discharging: and (3) placing the green body device in a temperature range of 500-650 ℃, preserving heat for 16-32 hours, removing organic matters in a green body sheet to obtain a green body, wherein the temperature rise speed in the whole glue removing process is preferably less than 10 ℃/hour.
And (c) sintering: and sintering the green body after the binder removal in air, heating to 1320-1420 ℃ at a heating rate of 150-200 ℃/h, and keeping the temperature for 3-5 hours. Sintering can move the grain boundary of the powder particles in the ceramic body, the air holes are gradually eliminated, and the body shrinks into a compact ceramic body with certain strength.
And eighthly, annealing treatment: and after high-temperature sintering, reducing the furnace temperature to 950-1050 ℃, and preserving the heat for 2-3 hours to obtain the formed low-dielectric-constant ceramic material. Annealing can reduce the internal stress of the blank, refine crystal grains, close microcracks, improve the tissue structure of the material and improve the mechanical property of the ceramic.
Ninthly, testing the device: and performing microwave performance test at the frequency of 10-11GHz by adopting an Agilent network.
According to the test result: the temperature dielectric constant of the formed low dielectric constant ceramic material is 4.5-6.5, and the temperature coefficient tau f (-40-85 ℃): +/-10 ppm/deg.C, and Qf value greater than or equal to 60000 GHz. And a low dielectric constant ceramic material is obtained.
The low dielectric constant ceramic material of the invention can be applied to the manufacture of microwave devices, including laminated antennas, dielectric antennas, filters, resonators and the like.
Examples
The present embodiment provides a low dielectric constant ceramic material for microwave devices and a method for preparing the same, and the present invention is not limited to the embodiments.
(1) According to the rare earths LnaObDoping modified Mg2+xSi5+xAl4-2xO18In which 0 is<x<0.5, weighing three groups of rare earth Ln with corresponding mass according to the raw material formula shown in Table 1aObThe magnesium hydroxide, the alumina and the silicon dioxide are sequentially placed in a ball mill, and each group of solid materials comprises the following components in percentage by mass: deionized water 1: 1.5, adding deionized water for wet ball milling, drying by a spray drying tower after ball milling, and finally calcining for 3 hours at 1200 ℃ in an air furnace to obtain rare earth LnaObDoping modified Mg2+xSi5+xAl4-2xO18And (3) powder. In each group of samples: in MSL1, x is 0.05; in MSL2, x is 0.2; in MSL3, x is 0.4.
TABLE 1 modified Mg2+xSi5+xAl4-2xO18EXAMPLES formulations
Figure BDA0002739465350000071
(2) According to SnO2·TiO2Composition of SnO2And TiO2The mixture is arranged in a ball mill according to the molar ratio of 1:1, and the mass ratio of the mixture is solid materials: deionized water 1: deionized water is added according to the proportion of 1.5 for wet ball milling, the mixture is evenly mixed, dried by a spray drying tower and calcined for 1.5 hours in an air furnace at the temperature of 1230 ℃.
(3) Based on rare earths LnaObDoped Mg2+xSi5+xAl4-2xO18·y(SnO2·TiO2) Wherein 0 is<x<0.5，0<y<0.20, specifically according to the chemical composition of the sample shown in Table 2, the modified Mg obtained in the step (1) was weighed2+xSi5+xAl4-2xO18SnO obtained in step (2)2·TiO2The mixture and various modified additives are placed in a ball mill in groups, and each group of samples comprises solid materials according to the mass ratio: deionized water 1: deionized water is added according to the proportion of 0.8 for wet sanding, the materials are required to be uniformly mixed, and the particle size D50 of the sanded powder is 0.60-2.10um according to the test of a laser particle sizer. And after sanding, adding a polyvinyl alcohol adhesive, a polyethylene glycol plasticizer and an ammonium carboxylate dispersant which respectively account for 0.5-3% of the total mass, and performing ball milling for 1-2 hours to obtain slurry. Drying the slurry by using a spray drying tower, and pressing the dried powder into cylindrical green compact wafers. Setting a temperature curve, and firstly placing the temperature curve in 600 ℃ for heat preservation for 24 hours to carry out glue discharging, wherein the heating rate in the whole glue discharging process is 10 ℃/hour; heating to 1320-1420 ℃ at the heating rate of 200 ℃/h, and preserving heat for 3 hours for sintering; and (3) after high-temperature sintering, keeping the temperature at 1000 ℃ for 2.5 hours to obtain the formed ceramic wafer with the low dielectric constant.
TABLE 2 chemical composition of low dielectric constant ceramic material samples
Figure BDA0002739465350000081
An Agilent network is adopted to carry out microwave performance test on the formed low dielectric constant ceramic material at the frequency of 10-11GHz, and the test results are listed in Table 3. The samples No. 1 to 15 in Table 3 were taken from the samples No. 1 to 15 in Table 2, and the same numbers correspond one to one.
TABLE 3 test results of various electrical properties of wafers made by sintering low-k ceramic material samples
Figure BDA0002739465350000091
As can be seen from Table 3, the ceramic material prepared by the above process can be in the temperature range of 1320-1420 ℃. The room-temperature dielectric constant is 4.5-6.5, and the temperature coefficient tau f (-40-85 ℃) can be formed by adjusting the compounding ratio of the materials: the system ceramic material with +/-10 ppm/DEG C, the Qf value being more than or equal to 60000GHz and the microwave performance parameters being continuously adjustable can meet the application requirements of the microwave device on the temperature coefficient tau f (-40-85 ℃) with low dielectric constant and narrow fluctuation range.
The embodiments described above are some, but not all embodiments of the invention. The detailed description of the embodiments of the present invention is not intended to limit the scope of the claims, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the scope of the claimed invention.

Claims (10)

1. A low dielectric constant ceramic material for microwave devices comprises a main material and a modified additive, and is characterized in that: the main material is formed by passing through rare earth LnaObDoped Mg2+xSi5+xAl4-2xO18With SnO after pre-sintering2·TiO2Mixture composition doped LnaObMg of (2)2+xSi5+xAl4-2xO18·y(SnO2·TiO2) Wherein 0 is<x<0.5，0<y<0.20, Ln is selected from Y, Ce, Sm, Pr, La, Dy, Ho, Er or Nd; the main material is made of low dielectric constant ceramicsThe mass fraction of the ceramic material is 98-99.5 wt%; the mass fraction of the modified additive in the low-dielectric-constant ceramic material is 0.5-2 wt%.
2. The low dielectric constant ceramic material of claim 1, wherein: lnaObThe molar ratio of doping is Mg2+xSi5+xAl4-2xO181-3% of the molar weight.
3. The low dielectric constant ceramic material of claim 1, wherein: the modifying additive is selected from Sb2O3、ZrO2、SrCO3、NiO、Nb2O5、SnO2And TiO2One or more of them.
4. The low-dielectric-constant ceramic material of claim 3, wherein the mass fraction of each of the modifying additives in the low-dielectric-constant ceramic material is in the range of: sb2O30 to 1.2% of ZrO20 to 1.0% of SrCO30 to 0.8 percent of NiO, 0 to 1.5 percent of NiO and Nb2O50 to 2.0% of SnO20 to 1.1% of TiO20 to 1.6%.
5. A method for preparing a low dielectric constant ceramic material according to any of claims 1 to 4, comprising the steps of:
s1 solid-phase synthesis of rare earth LnaObDoped Mg2+xSi5+xAl4-2xO18: will LnaObMixing the magnesium hydroxide, the aluminum oxide and the silicon dioxide according to the proportion, grinding the mixture into uniform powder particles, and calcining the powder particles for 2 to 4 hours at the temperature of 1100 to 1300 ℃ in the air atmosphere to obtain LnaObDoped Mg2+xSi5+xAl4-2xO18；
S2 SnO synthesis by solid phase method2·TiO2The mixture is as follows: mixing tin oxide and titanium dioxide according to a ratio, grinding into uniform powder particles, and calcining at the temperature of 1200-1250 ℃ for 1-2 hours in air atmosphere to obtain SnO2·TiO2Mixing;
s3, mixing Ln obtained in step S1aObDoped Mg2+xSi5+xAl4-2xO18SnO obtained in step S22·TiO2The mixture and the modified additive are mixed according to the formula requirement and are ground into uniform powder particles, and the low dielectric constant ceramic material in a powder state is obtained.
6. The preparation method of claim 5, wherein in steps S1, S2 and S3, the uniform powder particles are ground, specifically, the solid material is put into a ball mill, water is added to the solid material for wet ball milling, the D50 particle size of the ball-milled powder particles is controlled to be 0.6-2.1um by controlling ball milling strength and ball milling time, and drying treatment is performed after ball milling.
7. The method of claim 5, further comprising the steps of:
s4, adding an adhesive, a plasticizer and a dispersing agent into the powder-state low-dielectric-constant ceramic material obtained in the step S3, performing ball milling for 1-2 hours to obtain slurry, drying to obtain powder, and pressing the powder into a green body;
s5, removing glue: heating the green body to 500-650 ℃, and preserving heat for 16-32 hours to obtain a green body;
s6, sintering: keeping the blank after the glue discharging at the temperature of 1320-1420 ℃ for 3-5 hours in an air atmosphere;
s7, annealing: and after sintering, keeping the temperature for 2-3 hours at 950-1050 ℃ to obtain the formed low-dielectric-constant ceramic material.
8. The method according to claim 7, wherein in step S4, the binder is polyvinyl alcohol, the plasticizer is polyethylene glycol, and the dispersant is an ammonium carboxylate salt.
9. The preparation method according to claim 7, wherein in the step S5, the temperature rising speed is controlled to be less than 10 ℃/h; and step S6, controlling the temperature rise speed to be 150-200 ℃/h.
10. The use of the low-k ceramic material according to any one of claims 1 to 4 for the manufacture of microwave devices, wherein the microwave devices comprise stacked antennas, dielectric antennas, filters and resonators.
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