CN112262483A - Piezoelectric element, vibration waveform sensor, and vibration waveform sensor module - Google Patents
Piezoelectric element, vibration waveform sensor, and vibration waveform sensor module Download PDFInfo
- Publication number
- CN112262483A CN112262483A CN201980038755.1A CN201980038755A CN112262483A CN 112262483 A CN112262483 A CN 112262483A CN 201980038755 A CN201980038755 A CN 201980038755A CN 112262483 A CN112262483 A CN 112262483A
- Authority
- CN
- China
- Prior art keywords
- piezoelectric
- piezoelectric element
- layers
- waveform sensor
- vibration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 229910052783 alkali metal Inorganic materials 0.000 claims abstract description 7
- 150000001340 alkali metals Chemical class 0.000 claims abstract description 7
- 230000010287 polarization Effects 0.000 claims description 6
- 229910002113 barium titanate Inorganic materials 0.000 claims description 3
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 3
- 238000001514 detection method Methods 0.000 abstract description 12
- 239000013078 crystal Substances 0.000 abstract description 9
- 239000011347 resin Substances 0.000 abstract description 6
- 229920005989 resin Polymers 0.000 abstract description 6
- 230000035945 sensitivity Effects 0.000 abstract description 6
- 230000008878 coupling Effects 0.000 abstract description 5
- 238000010168 coupling process Methods 0.000 abstract description 5
- 238000005859 coupling reaction Methods 0.000 abstract description 5
- 230000007613 environmental effect Effects 0.000 abstract description 5
- 238000010030 laminating Methods 0.000 abstract description 4
- 229910000679 solder Inorganic materials 0.000 abstract description 3
- 229910010293 ceramic material Inorganic materials 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 45
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 239000003513 alkali Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 229910018054 Ni-Cu Inorganic materials 0.000 description 1
- 229910018481 Ni—Cu Inorganic materials 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002305 electric material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000010349 pulsation Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
Images
Classifications
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B5/00—Measuring for diagnostic purposes; Identification of persons
- A61B5/02—Detecting, measuring or recording pulse, heart rate, blood pressure or blood flow; Combined pulse/heart-rate/blood pressure determination; Evaluating a cardiovascular condition not otherwise provided for, e.g. using combinations of techniques provided for in this group with electrocardiography or electroauscultation; Heart catheters for measuring blood pressure
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/30—Niobates; Vanadates; Tantalates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
Abstract
The present invention enables vibration detection with high sensitivity and reduces environmental load without using a ceramic material containing lead and a single crystal material. In the piezoelectric element (100), a piezoelectric layer (102) and internal electrode layers (104, 106) are alternately stacked in a plurality of layers, and a cover layer (108) is further stacked. As the piezoelectric layer (102), a non-lead piezoelectric material, for example, an alkali metal niobate type piezoelectric material, is used. External electrodes (120, 122) are formed on the end surfaces where the internal electrode layers (104, 106) are exposed, and a high voltage is applied to them to polarize the piezoelectric layer (102). The external electrodes (120, 122) are fixed to the electrical connection portions of the substrate (140) by solder or conductive resins (130, 132). Since a piezoelectric material containing no lead is used, the electromechanical coupling coefficient is lower than that of a single crystal piezoelectric material, but sufficient vibration detection sensitivity can be obtained by laminating a plurality of piezoelectric layers, and the environmental load can be reduced.
Description
Technical Field
The present invention relates to a piezoelectric element, a vibration waveform sensor using the same, and a vibration waveform sensor module, and more particularly, to improvements of a piezoelectric element, a vibration waveform sensor, and a vibration waveform sensor module suitable for detecting various vibration waveforms such as pulse.
Background
In the contemporary age where the IoT (Internet of Things) is rapidly spread, the required number of sensors is increasing rapidly, and technologies for manufacturing sensors in large quantities at lower cost and in an environment-friendly manner are required. For example, patent document 1 below discloses a wide-band sensor for efficiently detecting sound waves, pulse waves, or the like, in which a piezoelectric element is provided on the surface of an insulating substrate, and a cylindrical member having an opening is provided so as to surround the piezoelectric element 2. In a conventional vibration waveform sensor for a wide band, a one-arm structure or the like is widely used to detect low-cycle vibration, and according to the background art, a closed cavity is formed by bringing the opening into contact with a body surface, whereby minute vibration can be detected in a wide band in a compact and low-noise manner.
Patent document 2 discloses that: by using a piezoelectric single crystal composition having a large electromechanical coupling coefficient and piezoelectric constant and a small sound velocity and SAW velocity, it is possible to reduce the size of a piezoelectric oscillator using a volume elastic wave, such as a piezoelectric filter, a piezoelectric resonator, or a piezoelectric gyro, and a surface elastic wave device, such as a piezoelectric filter, or a sensor.
Documents of the prior art
Patent document
Patent document 1: international publication WO2013/145352
Patent document 2: japanese patent laid-open publication No. 2006 and 282433
Disclosure of Invention
Technical problem to be solved by the invention
However, as a piezoelectric material having a high electromechanical coupling coefficient, a piezoelectric single crystal represented by lead zirconate titanate (PZT) or lead titanate (PT) is known, and although it is widely used, there is a concern about environmental safety because it contains lead. In addition, when a piezoelectric single crystal composition is used for the piezoelectric layer, it cannot be said that it is preferable in terms of manufacturing cost.
The present invention has been made in view of the above circumstances, and an object thereof is to enable vibration detection with high sensitivity without using ceramics and single crystal materials containing lead. Another object is to reduce the environmental load and to perform vibration detection relatively advantageously in terms of cost.
Technical solution for solving technical problem
The piezoelectric element of the present invention includes: a plurality of internal electrode layers; a plurality of piezoelectric layers formed of a lead-free piezoelectric material, the plurality of piezoelectric layers being polarized in a stacking direction by applying a voltage for polarization to the internal electrode layers; and cover layers laminated on the front and back surfaces of a laminated body in which the plurality of piezoelectric layers are laminated with the plurality of internal electrode layers interposed therebetween. In one of the main aspects, the above-mentioned non-lead press is characterizedThe electric material is alkali metal niobate piezoelectric material or barium titanate. In another aspect, the alkali niobate-based piezoelectric material is characterized in that: (K)1-w- xNawLix)a(SbyTazNb1-y-z)O3Wherein w, x, y, z, a satisfy: w is more than or equal to 0 and less than or equal to 1, 0.02<x≤0.1，0.02<w+x≤1，0≤y≤0.1，0≤z≤0.4，1<a is less than or equal to 1.1. In another aspect, the coating layer is less than 50 μm. The piezoelectric element further includes external electrodes for external connection, which are formed on both ends of the piezoelectric element in the longitudinal direction and alternately connected to the internal electrode layers.
The vibration waveform sensor according to the present invention is characterized by comprising a substrate on which the piezoelectric element is mounted, and the piezoelectric element is mounted so that a polarization direction thereof is perpendicular to a mounting surface. In one of the main aspects, a vibration ring for transmitting the vibration to the piezoelectric element is provided around the piezoelectric element. In another aspect, the vibration ring is grounded through the substrate.
The vibration waveform sensor module of the present invention is characterized by comprising: the vibration waveform sensor described above; and a charge amplifier that outputs a voltage proportional to an amount of charge generated in the piezoelectric element of the vibration waveform sensor. The above and other objects, features and advantages of the present invention will become apparent from the following detailed description and the accompanying drawings.
Effects of the invention
According to the present invention, since a piezoelectric element is configured by laminating a plurality of layers of a lead-free piezoelectric material with internal electrode layers interposed therebetween and a detection output is obtained by using a charge amplifier, the same sensitivity as that in the case of using a single crystal piezoelectric material can be obtained, and the load on the environment can be reduced, and the temperature conditions during manufacturing and during use can be alleviated.
Drawings
Fig. 1 is a view showing a piezoelectric element according to example 1 of the present invention, (a) is a view showing a main cross section, and (B) is a view showing a laminated state.
In fig. 2, (a) is a graph showing an output in an example of pulse detection in which the above-described embodiments are compared, and (B) is a graph comparing the amplification factors of the conventional art and the present invention.
Fig. 3 is a diagram showing an example of the configuration of the vibration waveform sensor and the configuration of its components according to embodiment 2 of the present invention.
Detailed Description
Hereinafter, the best mode for carrying out the present invention will be described in detail based on examples.
Example 1
First, embodiment 1 of the present invention will be described with reference to fig. 1 and 2 (a). The piezoelectric element of the present embodiment is shown in fig. 1, in which (a) shows a main sectional structure and (B) shows a laminated structure. As shown in these figures, the piezoelectric element 100 has a structure in which a plurality of piezoelectric layers 102 and internal electrode layers 104 and 106 are alternately stacked, and a cover layer or protective layer 108 is stacked on these layers, and has a stacked structure similar to a multilayer ceramic capacitor (MLCC), for example. As the piezoelectric layer 102, a non-lead or lead-free piezoelectric material, for example, a piezoelectric material of an alkali metal niobate type, is used so as to have a thickness of 20 μm. The internal electrode layers 104 and 106 are made of a conductive material such as Ag, Ag-Pd alloy, Ni, Cu, or Ni-Cu alloy, and have a thickness of, for example, 3 μm. As the cover layer 108, an insulating material is used, and in the present embodiment, the same material as the piezoelectric layer 102 described above is used. The thicknesses of the cover layers 108 are each preferably less than 50 μm in view of not hindering the bending due to vibration.
As the piezoelectric material of alkali metal niobate type exemplified as an example of the piezoelectric material of non-lead, a piezoelectric material represented by the following general formula (1) is suitably used.
(K1-w-xNawLix)a(SbyTazNb1-y-z)O3……(1)
Wherein, the w, x, y, z and a satisfy:
0≤w≤1，
0.02<x≤0.1，
0.02<w+x≤1，
0≤y≤0.1，
0≤z≤0.4，
1<a≤1.1。
the number of stacked layers can be appropriately set, and for example, a stacked body is prepared so that the piezoelectric layers 102 form 10 layers. As the outer dimensions of the piezoelectric element 100, for example, the length of the long side is 3.2mm, the length (width) of the short side is 1.6mm, and the thickness is 0.3 mm. As a manufacturing method, the piezoelectric layers 102 and the internal electrode layers 104 and 106 are alternately stacked in layers, and further the cover layer 108 is stacked, followed by firing. Then, the external electrodes 120 are formed on the end surfaces of the stacked body in the longitudinal direction, at which the internal electrode layers 104 are exposed, and the external electrodes 122 are formed on the end surfaces of the stacked body at which the internal electrode layers 106 are exposed. That is, the internal electrode layers 104 and 106 are alternately drawn out to the cross section on the long side and connected to the external electrodes 120 and 122 for external connection, respectively.
Then, a high voltage is applied between these external electrodes 120 and 122 to perform polarization treatment of the piezoelectric layer 102, thereby imparting piezoelectricity. The polarization direction of the piezoelectric layers 102 is set to the lamination direction of the internal electrode layers 104 and 106, i.e., the thickness direction.
In the piezoelectric element 100 obtained as described above, the external electrodes 120 and 122 at both ends in the longitudinal direction are fixed to the electrical connection portions of the substrate 140 by solder or conductive resins 130 and 132, for example, as shown in fig. 1 (a). The charge amplifier (charge amplifier)50 will be described later.
According to this example, since a piezoelectric material containing no lead is used, the electromechanical coupling coefficient becomes lower than that of a piezoelectric ceramic such as PZT, a single crystal composition, or the like, but sufficient detection sensitivity of vibration can be obtained by alternately stacking a plurality of piezoelectric layers and electrode layers. Fig. 2 (a) shows different amplitudes depending on the material used. The amplitude of the Alkali Niobate (AN) -based ceramic is about one tenth lower than that of the PZT-based ceramic, but substantially the same amplitude can be obtained by laminating them. Further, the alkali niobate-based ceramics have a higher Curie temperature than PZT-based ceramics, which are about 300 ℃ and above 400 ℃. Therefore, there is also an advantage that the thermal conditions in the manufacturing process and the use state can be relaxed.
Example 2
Next, an example of a vibration waveform sensor and a vibration waveform sensor module using the piezoelectric element described above will be described with reference to fig. 2 (B) and 3. Fig. 3 shows a basic structure of the vibration waveform sensor of the present embodiment, in which (a) shows a cross section of the vibration waveform sensor 10, (B) shows an exploded view, and (C) shows a view from the bottom surface side. In these figures, the vibration waveform sensor 10 is configured such that a piezoelectric element 100 is disposed on a main surface of a substrate 20, and the piezoelectric element 100 is covered with a vibration ring 40 functioning as a vibration introduction body.
In each of the above sections, the substrate 20 is a member that fixedly supports the piezoelectric element 100 and performs extraction of the electrode and signal amplification. A pair of electrode pads 22 and 23 are provided near the center of the main surface of the substrate 20, and a ground conductor 24 is formed around the pair of electrode pads. The electrode pads 22 and 23 are drawn out to the back side of the substrate 20 through the through holes 22A and 23A. As shown in fig. 1 a, the external electrodes 120 and 122 of the piezoelectric element 100 are mounted on the electrode pads 22 and 23 by solder or conductive resins 130 and 132 (see fig. 1 a). In this way, the amplifier and the like provided on the back surface side of the substrate 20 are connected to the piezoelectric element 100 by the electrode pads 22 and 23 and the through holes 22A and 23A. An insulating resin may be provided so as to cover the electrode pads 22 and 23, and the piezoelectric element 100 may be covered with the resin.
Next, the vibration ring 40 is provided so as to surround the piezoelectric element 100, and the vibration ring 40 is electrically connected to the ground conductor 24. The ground conductor 24 is drawn out to the back surface side of the substrate 20 through the through holes 24A and 24B (shown in fig. 3 a). The vibration ring 40 is made of, for example, stainless steel, has conductivity, and is grounded in common with the skin of a human body in contact therewith, and is configured to introduce minute vibrations of a living body such as the skin, and further functions as a vibration introduction body for transmitting vibrations to the substrate 20.
In fig. D, a circuit configuration of the vibration waveform sensor module 200 is shown, and an output of the vibration waveform sensor 10 can be inputted to and amplified by a charge amplifier (charge amplifier) 50. The charge amplifier 50 is mounted on the substrate 20 and can output a voltage proportional to the charge generated in the piezoelectric element 100. The output of the charge amplifier 50 is converted into a digital signal by an a/D converter (not shown) and then output.
The vibration waveform sensor assembly 200 as described above is attached to an appropriate position of a finger or the like of a human body with a medical fixing tape 12 or the like so that the vibration ring 40 comes into contact with the skin BD of the human body, as shown in fig. 3 (E), for example. On the other hand, a volume change due to inflow of blood accompanying pulsation of the heart, that is, a pulse is transmitted to the vibration ring 40 of the vibration waveform sensor unit 200 as minute vibration of the skin BD. The vibration of the vibration ring 40 further vibrates the substrate 20 functioning as a vibrator or deformation body, and the minute vibration transmitted from the vibration ring 40 is transmitted to the piezoelectric element 100. Thereby, for example, minute vibrations of the skin BD are detected as a piezoelectric signal.
In this case, the piezoelectric element 100 is configured to have a structure in which a plurality of piezoelectric layers 102 are stacked. Therefore, when viewed as a capacitor, the area becomes large, the amount of charge that can be accumulated also increases, and the output of the charge amplifier 50 that outputs a voltage proportional to the amount of charge also increases.
Fig. 2 (B) is a graph showing pulse waveform detection outputs of a vibration waveform sensor unit using a conventional piezoelectric element having 1 layer of PZT-based piezoelectric material, and a vibration waveform sensor unit using a piezoelectric element of this example in which 10 layers of lead-free alkali metal niobate-based piezoelectric material are stacked. The piezoelectric elements are 3.2mm long side, 1.6mm short side and 0.3mm thick. As can be seen from this graph, both the PZT-based conventional structure and the present embodiment can obtain substantially similar outputs, and as shown in the present embodiment, even when a non-lead piezoelectric material having a small electromechanical coupling coefficient is used, a favorable waveform detection can be performed by adopting a laminated structure.
The present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the scope of the present invention. For example, the following is also included.
(1) The materials of the respective portions shown in the above embodiments are examples, and various known materials may be used. For example, in the above-described embodiment, a non-lead alkali niobate-based piezoelectric material is used as the piezoelectric layer 102, but various other non-lead piezoelectric materials, for example, barium titanate, may be used. The shape and size of the piezoelectric element 100 and the number of stacked piezoelectric layers 102 can be set as appropriate.
(2) The pulse detection shown in the above embodiments is an example, and can be applied to detection of various vibrations.
(3) In the above-described embodiment, the example in which the charge amplifier 50 is mounted on the substrate 20 is given, but the charge amplifier 50 may be provided outside the vibration waveform sensor 10.
Industrial applicability of the invention
According to the present invention, since a piezoelectric element is configured by laminating a plurality of layers of a lead-free piezoelectric material with internal electrode layers interposed therebetween and a detection output is obtained by using a charge amplifier, sensitivity similar to that in the case of using a single crystal piezoelectric material can be obtained, environmental load can be reduced, and temperature conditions during manufacturing and during use can be alleviated, and thus the present invention is suitable for various vibration waveform sensors such as a pulse sensor.
Description of the reference numerals
10: vibration waveform sensor
12: fixing adhesive tape
20: substrate
22. 23: electrode pad
22A, 23A: through hole
24: grounding conductor
24A, 24B: through hole
40: vibration ring
50: charge amplifier
100: piezoelectric element
102: piezoelectric layer
104. 106: internal electrode layer
108: covering layer
120. 122: external electrode
130. 132: conductive resin
140: substrate
200: a vibration waveform sensor assembly.
Claims (9)
1. A piezoelectric element, comprising:
a plurality of internal electrode layers;
a plurality of piezoelectric layers formed of a piezoelectric material other than lead, the plurality of piezoelectric layers being polarized in a stacking direction by applying a voltage for polarization to the internal electrode layers; and
and cover layers stacked on the front and back surfaces of a stacked body in which the plurality of piezoelectric layers are stacked with the plurality of internal electrode layers interposed therebetween.
2. The piezoelectric element according to claim 1, wherein:
the non-lead piezoelectric material is an alkali metal niobate piezoelectric material or barium titanate.
3. The piezoelectric element according to claim 2, wherein:
the alkali metal niobate piezoelectric material is as follows:
(K1-w-xNawLix)a(SbyTazNb1-y-z)O3wherein, in the step (A),
the w, x, y, z and a satisfy:
0≤w≤1，
0.02<x≤0.1，
0.02<w+x≤1，
0≤y≤0.1，
0≤z≤0.4，
1<a≤1.1。
4. the piezoelectric element according to any one of claims 1 to 3, wherein:
the cover layer is made smaller than 50 μm.
5. The piezoelectric element according to any one of claims 1 to 4, wherein:
the piezoelectric element further includes external electrodes for external connection, which are formed on both ends of the piezoelectric element in the longitudinal direction and alternately connected to the internal electrode layers.
6. A vibration waveform sensor characterized by:
a substrate having the piezoelectric element according to any one of claims 1 to 5 mounted thereon, wherein the piezoelectric element is mounted so that a polarization direction thereof is perpendicular to a mounting surface.
7. The vibratory waveform sensor of claim 6, wherein:
a vibration ring that transmits the vibration to the piezoelectric element is provided around the piezoelectric element.
8. The vibratory waveform sensor of claim 7, wherein:
the vibration ring is at ground potential via the substrate.
9. A vibratory waveform sensor assembly, comprising:
a vibration waveform sensor as claimed in any one of claims 6 to 8; and
and a charge amplifier that outputs a voltage proportional to an amount of charge generated in the piezoelectric element of the vibration waveform sensor.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018-113303 | 2018-06-14 | ||
| JP2018113303A JP2019216203A (en) | 2018-06-14 | 2018-06-14 | Piezoelectric element, vibration waveform sensor, and vibration waveform sensor module |
| PCT/JP2019/023029 WO2019240111A1 (en) | 2018-06-14 | 2019-06-11 | Piezoelectric element, oscillation waveform sensor, and oscillation waveform sensor module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112262483A true CN112262483A (en) | 2021-01-22 |
Family
ID=68842888
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201980038755.1A Pending CN112262483A (en) | 2018-06-14 | 2019-06-11 | Piezoelectric element, vibration waveform sensor, and vibration waveform sensor module |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2019216203A (en) |
| CN (1) | CN112262483A (en) |
| WO (1) | WO2019240111A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20230094543A1 (en) * | 2021-09-14 | 2023-03-30 | Halliburton Energy Services, Inc. | Acoustic Transducer with Piezoelectric Elements Having Different Polarities |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010087380A (en) * | 2008-10-01 | 2010-04-15 | Taiyo Yuden Co Ltd | Piezoelectric drive element, and piezoelectric drive device |
| JP2011037697A (en) * | 2009-07-14 | 2011-02-24 | Ngk Insulators Ltd | Piezoelectric/electrostrictive ceramic composition |
| JP2012134428A (en) * | 2010-12-24 | 2012-07-12 | Canon Inc | Driving method of piezoelectric device |
| CN104078560A (en) * | 2013-03-25 | 2014-10-01 | 日立金属株式会社 | Piezoelectric thin-film multilayer body |
| JP2015087188A (en) * | 2013-10-29 | 2015-05-07 | セイコーエプソン株式会社 | Vibration element, vibrator, electronic apparatus and mobile body |
| CN104956507A (en) * | 2013-01-29 | 2015-09-30 | 佳能株式会社 | Piezoelectric material, piezoelectric element, and electronic equipment |
| WO2016167202A1 (en) * | 2015-04-17 | 2016-10-20 | 太陽誘電株式会社 | Vibration waveform sensor and waveform analysis device |
| JP2017157829A (en) * | 2016-02-26 | 2017-09-07 | 京セラ株式会社 | Plate-like substrate and electronic component |
| US20170263845A1 (en) * | 2016-03-10 | 2017-09-14 | Taiyo Yuden Co., Ltd. | Piezoelectric element and method of manufacturing the same |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110012051A1 (en) * | 2009-07-14 | 2011-01-20 | Ngk Insulators, Ltd. | Piezoelectric/electrostrictive ceramic composition |
-
2018
- 2018-06-14 JP JP2018113303A patent/JP2019216203A/en active Pending
-
2019
- 2019-06-11 CN CN201980038755.1A patent/CN112262483A/en active Pending
- 2019-06-11 WO PCT/JP2019/023029 patent/WO2019240111A1/en active Application Filing
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010087380A (en) * | 2008-10-01 | 2010-04-15 | Taiyo Yuden Co Ltd | Piezoelectric drive element, and piezoelectric drive device |
| JP2011037697A (en) * | 2009-07-14 | 2011-02-24 | Ngk Insulators Ltd | Piezoelectric/electrostrictive ceramic composition |
| JP2012134428A (en) * | 2010-12-24 | 2012-07-12 | Canon Inc | Driving method of piezoelectric device |
| CN104956507A (en) * | 2013-01-29 | 2015-09-30 | 佳能株式会社 | Piezoelectric material, piezoelectric element, and electronic equipment |
| CN104078560A (en) * | 2013-03-25 | 2014-10-01 | 日立金属株式会社 | Piezoelectric thin-film multilayer body |
| JP2015087188A (en) * | 2013-10-29 | 2015-05-07 | セイコーエプソン株式会社 | Vibration element, vibrator, electronic apparatus and mobile body |
| WO2016167202A1 (en) * | 2015-04-17 | 2016-10-20 | 太陽誘電株式会社 | Vibration waveform sensor and waveform analysis device |
| JP2017157829A (en) * | 2016-02-26 | 2017-09-07 | 京セラ株式会社 | Plate-like substrate and electronic component |
| US20170263845A1 (en) * | 2016-03-10 | 2017-09-14 | Taiyo Yuden Co., Ltd. | Piezoelectric element and method of manufacturing the same |
| CN107180911A (en) * | 2016-03-10 | 2017-09-19 | 太阳诱电株式会社 | Piezoelectric element and its manufacture method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2019216203A (en) | 2019-12-19 |
| WO2019240111A1 (en) | 2019-12-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2012060235A1 (en) | Piezoelectric vibration device | |
| US9135906B2 (en) | Ultrasonic generator | |
| US10429255B2 (en) | Piezoelectric sensor and detecting device | |
| US8915139B1 (en) | Relaxor-based piezoelectric single crystal accelerometer | |
| US4894580A (en) | Chip-type resonator and method of manufacturing the same | |
| JP6742797B2 (en) | Vibration waveform sensor | |
| JPWO2018163963A1 (en) | Ultrasonic sensor and ultrasonic sensor device | |
| CN112262483A (en) | Piezoelectric element, vibration waveform sensor, and vibration waveform sensor module | |
| JP2015216373A (en) | Piezoelectric element and piezoelectric vibration module including the same | |
| JP7088341B2 (en) | Vibration device | |
| KR20170000596A (en) | piezoelectric device and piezoelectric speaker using the same | |
| JP4471725B2 (en) | Piezoelectric resonator, piezoelectric resonator and filter, and composite substrate | |
| JPH07194517A (en) | Ultrasonic probe | |
| WO2019188381A1 (en) | Vibration element | |
| JP6773484B2 (en) | Ultrasonic transducers, ultrasonic probes using them, and electronic devices | |
| JP5663901B2 (en) | Pickup device | |
| JP2002362973A (en) | Piezoelectric ceramic composition for piezoelectric vibratory gyroscope, and piezoelectric vibratory gyroscope | |
| JP4508997B2 (en) | Piezoelectric resonance component | |
| JP2019202004A (en) | Vibration waveform sensor and vibration waveform sensor module | |
| JP7043035B2 (en) | Tuning fork type piezoelectric vibrator and its manufacturing method | |
| WO2020202961A1 (en) | Tuning-fork-type piezoelectric vibrator and method for manufacturing same | |
| JP7000036B2 (en) | Oscillators, oscillator manufacturing methods, and electronic devices | |
| JPH07298395A (en) | Ultrasonic transducer and its manufacture | |
| JP6961949B2 (en) | Vibration device | |
| JP6776928B2 (en) | Vibration device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |